CN116156904A - Dual-mode organic photodiode based on barrier layer interface regulation and control and preparation method thereof - Google Patents

Abstract

The invention provides a dual-mode organic photodiode based on barrier layer interface regulation and its preparation method, comprising a transparent base layer and a five-layer material structure, the five-layer material structure comprising a transparent bottom electrode layer, a first barrier layer, an organic photosensitive layer, a second Two barrier layers and the top electrode layer; under forward bias, the carrier traps at the interface between the barrier layer and the photosensitive layer trigger tunneling injection of carriers in the external circuit, the device works in PM mode, with high external quantum efficiency, suitable for weak Light detection can avoid the use of pre-amplification circuit. Under reverse bias, the barrier layers on both sides of the photosensitive layer can prevent the injection of carriers in the external circuit. The device works in PV mode with limited external quantum efficiency. It is suitable for strong light detection and can avoid heat dissipation and heat dissipation caused by high power consumption. Breakdown and other issues. The invention proposes a method for preparing a dual-mode device by regulating the barrier layer interface, optimizes the photoelectric performance of the dual-mode device, and thus provides a solution for the preparation of a dual-mode organic photodiode.

Description

Dual-mode organic photodiode and preparation method based on barrier layer interface regulation

technical field

The invention belongs to the technical field of organic semiconductors, and in particular relates to a dual-mode organic photodiode based on barrier layer interface regulation, which is suitable for light detection under both strong and weak conditions.

Background technique

In the information-based society, there is an increasing demand for highly integrated microelectronic devices that are smaller in size, cheaper in price, and can provide more functions. Photodiodes have the advantages of small size, easy integration, low dark current, and fast response, and are widely used in imaging systems such as CCD/CMOS arrays. In recent years, organic photodiodes have attracted much attention due to their advantages such as compatible flexible substrates, large material modification space, adjustable response spectrum, light weight, and large-area processing and preparation.

Due to the rectification characteristics of photodiodes, the dark current of general photodiode devices under forward bias is very high, and the stability of bright and dark currents under constant voltage cannot be guaranteed, so forward bias devices cannot be used for optical signal detection. Therefore, photodiodes typically implement light signal detection based on the photovoltaic (PV) effect in reverse bias mode. However, the device in PV mode has low external quantum efficiency (EQE), which is less than 100%, and the photogenerated current is very small; in the detection of weak light signals, the photogenerated current of a single pixel in the CCD/CMOS array can be as low as pA level, so the photodiode is usually combined with a preamplifier circuit in practical applications, which leads to a complex structure of the imaging system and increases the cost.

The PM-OPD based on the photomultiplier (PM) effect has an EQE far greater than 100%, and has a stronger detection ability for weak light signals. At the same time, it does not require a preamplifier circuit, which further meets the requirements of imaging system integration and miniaturization. Nowadays, the EQE of PM-OPD can often reach 10 ⁵ %. This also means that the photocurrent of the device in PM mode is several orders of magnitude higher than that in PV mode, but driving the device to work in PM mode usually requires a higher bias voltage, which will greatly increase the power consumption of the system. Especially when detecting strong optical signals, problems such as breakdown resistance and heat dissipation caused by high power consumption cannot be ignored for OPD devices based on organic photosensitive layers.

To sum up, whether it is a PV-type device or a PM-type device, due to the limitation of its single working mode, it is difficult to reconcile the conflict between the increasing requirements of multi-scenario applications and high integration.

Contents of the invention

In order to solve the above existing problems, the purpose of the present invention is to provide a dual-mode organic photodiode based on barrier layer interface regulation, so as to solve the application limitation problem caused by the single working mode of organic photodiodes at the present stage.

To achieve the above object, the technical scheme adopted in the present invention is as follows:

A dual-mode organic photodiode based on barrier layer interface regulation, including a transparent substrate 1 at the bottom, and a five-layer material structure above the transparent substrate 1. The five-layer material structure includes: a transparent bottom electrode layer 2, a first barrier layer 3, an organic Photosensitive layer 4, second barrier layer 5, top electrode layer 6;

Wherein, the transparent bottom electrode layer 2 covers half of the upper surface of the transparent substrate 1, and the upper surface of the transparent bottom electrode layer 2 and the upper surface of the transparent substrate 1 not covered by the transparent bottom electrode layer 2 are covered by the first barrier layer 3, and the first Above the barrier layer 3 are an organic photosensitive layer 4, a second barrier layer 5, and a top electrode layer 6 in sequence;

The interface between the first barrier layer 3 and/or the second barrier layer 5 and the organic photosensitive layer 4 has a carrier trap for accumulating carriers; under forward bias, the first barrier layer 3 and/or The carrier trap at the interface between the second barrier layer 5 and the organic photosensitive layer 4 induces tunneling injection of external circuit carriers, so that the dual-mode organic photodiode regulated based on the barrier layer interface works in PM mode; in reverse bias Pressing down, the first barrier layer 3 and the second barrier layer 5 on the upper and lower sides of the organic photosensitive layer 4 prevent the injection of external circuit carriers, so that the dual-mode organic photodiode based on barrier layer interface regulation works in PV mode.

As a preferred manner, the organic photosensitive layer contains one or more organic semiconductor materials.

As a preferred mode, the material of the organic photosensitive layer is selected from: poly([2,6-4,8-bis-((2-ethylhexyl)-thiophen-5-yl)benzo[1,2-B (PBDB-T), poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-B:4 ,5-B']dithiophene])-ALT-(5,5-(1',3'-di-2-thiophene-5',7'-bis(2-ethylhexyl)benzo[1' ,2'-C:4',5'-C']dithiophene-4,8-dione) (PM6), poly(3-hexylthiophene-2,5-diyl)(P3HT),3,9 -bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(5-hexylthienyl)-dithieno[2,3-d:2',3' -d']-s-indaceno[1,2-b:5,6-b']dithiophene(ITIC-Th),2,2'-((12,13-bis(2-ethylhexyl)-12 ,13-dihydro-3,9-unicosyl bisthieno[2",3":4',5']thieno[2',3':4,5]pyrrolo[3,2-e:2 ',3'-g][2,1,3]benzothiadiazole-2,10-diyl)bis(methine(5,6-difluoro-3-oxo-1H-indene-2,1(3H )-diylidene)))bis(malononitrile)(Y6),[6,6]-phenyl C61 butyric acid methyl ester 1-[3-(methoxycarbonyl)propyl]-1-phenyl- [6.6]C613'H-cyclopropane[1,9][5,6]fullerene-C60-IH-3'-butyric acid 3'-benzyl ester 3-phenyl-3H-cyclopropane[1, 9] One or more of [5,6]fullerene-C60-IH-3-butyric acid methyl ester (PC61BM).

As a preferred mode, the preparation process of the barrier layer is as follows: the barrier layer material is deposited on the upper surface of the bottom electrode layer to form a thin film by evaporation, scraping, drop coating, spin coating or spraying process, and the second barrier layer Cover the upper surface of the organic photosensitive layer to form a thin film, and then perform evaporation process control treatment, material doping, nanoimprinting, template growth, thermal annealing or solvent annealing, so that the upper surface of the first barrier layer and/or the lower surface of the second barrier layer Chemical state defects or morphology defects are formed on the surface.

As a preferred manner, the method for regulating the chemical state defect or the morphology defect includes: regulating the evaporation rate for preparing the barrier layer, or regulating the doping material, or annealing treatment.

As a preferred mode, the first blocking layer and the second blocking layer are electron blocking layers or hole blocking layers, and the material of the electron blocking layer is selected from MoO3, PVK, poly-TPD, P3HT and PEDOT:PSS, and the hole blocking layer The layer material is selected from ZnO, TiO2, PEIE, PEIE-Zn, LiF and SeO2.

As a preferred manner, the thickness of the organic photosensitive layer 4 is 100nm-2000nm.

The present invention also provides a method for preparing a dual-mode organic photodiode based on barrier layer interface regulation, comprising the following steps:

Step 1. Depositing a transparent bottom electrode on a transparent substrate by magnetron sputtering, thermal evaporation, or electron beam evaporation;

Step 2, cleaning the transparent bottom electrode to remove impurities;

Step 3. Apply the material of the barrier layer by evaporation, or scrape coating, or drop coating, or spin coating or spraying process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film, and then the evaporation process is controlled and processed, and the material Doping, nanoimprinting, template growth, thermal annealing or solvent annealing to form chemical state defects or defect morphology on the upper surface of the first barrier layer and/or the lower surface of the second barrier layer;

Step 4, the organic photosensitive layer is coated on the upper surface of the first barrier layer by spin coating, or evaporation, or scraping, or drop coating, or spraying process;

Step 5, apply the barrier layer material by evaporation, or scrape coating, or drop coating, or spin coating or spraying process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film;

Step 6. Deposit the top electrode by magnetron sputtering, or thermal evaporation, or electron beam evaporation.

The beneficial effects of the present invention are:

The invention provides a dual-mode organic photodiode based on barrier layer interface regulation, which has two working modes of photovoltaic (PV) and photomultiplier (PM), and the mode switching is performed by controlling the direction of the applied bias voltage, so as to meet the requirements of strong and weak light. Multi-scenario application requirements for testing. Under reverse bias, the barrier layers on both sides of the organic photosensitive layer can prevent the injection of external circuit carriers, so that the dual-mode organic photodiode works in PV mode. At this time, the external quantum efficiency is limited and the photogenerated current is small, which is suitable for It is suitable for detection under strong light conditions, which can avoid problems such as device breakdown and heat dissipation caused by high power consumption. Under forward bias, the carrier trap at the interface between the barrier layer and the organic photosensitive layer induces carrier tunneling injection in the external circuit, so that the dual-mode organic photodiode works in PM mode. At this time, the external quantum efficiency is high and The photogenerated current is large, which is suitable for detection in weak light conditions and can avoid the use of preamplification circuits.

Description of drawings

Fig. 1 is the device structure schematic diagram of the dual-mode organic photodiode based on barrier layer interface control in the present invention;

2 is an XPS characterization analysis diagram of the upper surface of the first barrier layer in the dual-mode organic photodiode prepared in Example 1 and the control group;

Fig. 3 is the working principle diagram of the dual-mode organic photodiode prepared in embodiment 1;

Fig. 4 is the EQE spectral response graph of the dual-mode organic photodiode prepared in Example 1 and the control group.

Fig. 5 is the EQE spectral response graph of the dual-mode organic photodiode prepared in Example 2, Example 1 and the control group.

1 is a transparent substrate, 2 is a transparent bottom electrode layer, 3 is a first barrier layer, 4 is an organic photosensitive layer, 5 is a second barrier layer, and 6 is a top electrode layer.

Detailed ways

Specific embodiments of the present invention will be described below through specific examples, based on which those skilled in the art can have a clear understanding of the purpose, technical solutions, advantages and effects of the present invention. Obviously, the described embodiments are some embodiments of the present invention, rather than all embodiments; based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without making creative changes , also belong to the protection scope of the present invention.

The embodiment provides a dual-mode organic photodiode based on barrier layer interface regulation, including a transparent substrate 1 at the bottom, and a five-layer material structure above the transparent substrate 1. The five-layer material structure includes: a transparent bottom electrode layer 2, a first barrier layer 3, Organic photosensitive layer 4, second barrier layer 5, top electrode layer 6;

Wherein, the transparent bottom electrode layer 2 covers half of the upper surface of the transparent substrate 1, and the upper surface of the transparent bottom electrode layer 2 and the upper surface of the transparent substrate 1 not covered by the transparent bottom electrode layer 2 are covered by the first barrier layer 3, and the first Above the barrier layer 3 are an organic photosensitive layer 4, a second barrier layer 5, and a top electrode layer 6 in sequence;

The interface between the first barrier layer 3 and/or the second barrier layer 5 and the organic photosensitive layer 4 has a carrier trap for accumulating carriers; under forward bias, the first barrier layer 3 and/or The carrier trap at the interface between the second barrier layer 5 and the organic photosensitive layer 4 induces tunneling injection of external circuit carriers, so that the dual-mode organic photodiode regulated based on the barrier layer interface works in PM mode; in reverse bias Pressing down, the first barrier layer 3 and the second barrier layer 5 on the upper and lower sides of the organic photosensitive layer 4 prevent the injection of external circuit carriers, so that the dual-mode organic photodiode based on barrier layer interface regulation works in PV mode.

In some embodiments, the organic photosensitive layer includes one or more organic semiconductor materials.

In some embodiments, the material of the organic photosensitive layer is selected from: poly([2,6-4,8-bis-((2-ethylhexyl)-thiophen-5-yl)benzo[1,2 -B(PBDB-T), poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-B :4,5-B']dithiophene])-ALT-(5,5-(1',3'-di-2-thiophene-5',7'-bis(2-ethylhexyl)benzo[ 1',2'-C:4',5'-C']dithiophene-4,8-dione) (PM6), poly(3-hexylthiophene-2,5-diyl)(P3HT),3 ,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(5-hexylthienyl)-dithieno[2,3-d:2' ,3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene(ITIC-Th),2,2'-((12,13-bis(2-ethylhexyl )-12,13-dihydro-3,9-eicosyl bisthieno[2",3":4',5']thien o[2',3':4,5]pyrrolo[3,2 -e:2',3'-g][2,1,3]benzothiadiazole-2,10-diyl)bis(methine(5,6-difluoro-3-oxo-1H-indene-2 ,1(3H)-diylidene)))bis(malononitrile)(Y6),[6,6]-phenyl C61 methyl butanoate 1-[3-(methoxycarbonyl)propyl]-1 -Phenyl-[6.6]C61 3′H-cyclopropane[1,9][5,6]fullerene-C60-IH-3′-butyric acid 3′-benzyl ester 3-phenyl-3H-cyclo One or more of propane[1,9][5,6]fullerene-C60-IH-3-butyric acid methyl ester (PC61BM).

In some embodiments, the preparation process of the barrier layer is as follows: the material of the barrier layer is deposited on the upper surface of the bottom electrode layer to form a thin film by evaporation, scraping, drop coating, spin coating or spraying process, and the second The barrier layer is coated on the upper surface of the organic photosensitive layer to form a thin film, and then the evaporation process control treatment, material doping, nanoimprinting, template growth, thermal annealing or solvent annealing are performed to make the upper surface of the first barrier layer and/or the second barrier layer Chemical state defects or morphology defects are formed on the lower surface of the layer.

In some embodiments, the method for adjusting the chemical state defect or the shape defect includes: adjusting the evaporation rate for preparing the barrier layer, or adjusting the doping material, or annealing treatment.

In some embodiments, the first blocking layer and the second blocking layer are an electron blocking layer or a hole blocking layer, and the material of the electron blocking layer is selected from MoO3, PVK, poly-TPD, P3HT and PEDOT:PSS, and the hole The hole blocking layer material is selected from ZnO, TiO2, PEIE, PEIE-Zn, LiF and SeO2.

In some embodiments, the thickness of the organic photosensitive layer 4 is 100nm-2000nm.

In some embodiments, the preparation method of the dual-mode organic photodiode based on barrier layer interface regulation includes the following steps:

Step 1. Depositing a transparent bottom electrode on a transparent substrate by magnetron sputtering, thermal evaporation, or electron beam evaporation;

Step 2, cleaning the transparent bottom electrode to remove impurities;

Step 3. Apply the material of the barrier layer by evaporation, or scrape coating, or drop coating, or spin coating or spraying process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film, and then the evaporation process is controlled and processed, and the material Doping, nanoimprinting, template growth, thermal annealing or solvent annealing to form chemical state defects or defect morphology on the upper surface of the first barrier layer and/or the lower surface of the second barrier layer;

Step 4, the organic photosensitive layer is coated on the upper surface of the first barrier layer by spin coating, or evaporation, or scraping, or drop coating, or spraying process;

Step 5, apply the barrier layer material by evaporation, or scrape coating, or drop coating, or spin coating or spraying process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film;

Step 6. Deposit the top electrode by magnetron sputtering, or thermal evaporation, or electron beam evaporation.

Example 1

The structure of the dual-mode organic photodiode based on barrier layer interface control provided in this embodiment is shown in Figure 1, including a transparent substrate 1 at the bottom and a five-layer material structure above the transparent substrate 1. The five-layer material structure includes: transparent substrate Electrode layer 2, first barrier layer 3, organic photosensitive layer 4, second barrier layer 5, top electrode layer 6;

Wherein, the transparent bottom electrode layer 2 covers half of the upper surface of the transparent substrate 1, and the upper surface of the transparent bottom electrode layer 2 and the upper surface of the transparent substrate 1 not covered by the transparent bottom electrode layer 2 are covered by the first barrier layer 3, and the first Above the barrier layer 3 are an organic photosensitive layer 4, a second barrier layer 5, and a top electrode layer 6 in sequence;

The interface between the first barrier layer 3 and/or the second barrier layer 5 and the organic photosensitive layer 4 has a carrier trap for accumulating carriers; under forward bias, the first barrier layer 3 and/or The carrier trap at the interface between the second barrier layer 5 and the organic photosensitive layer 4 induces tunneling injection of external circuit carriers, so that the dual-mode organic photodiode regulated based on the barrier layer interface works in PM mode; in reverse bias Pressing down, the first barrier layer 3 and the second barrier layer 5 on the upper and lower sides of the organic photosensitive layer 4 prevent the injection of external circuit carriers, so that the dual-mode organic photodiode based on barrier layer interface regulation works in PV mode.

The above-mentioned dual-mode organic photodiode based on barrier layer interface regulation adopts an inverse structure, and the specific preparation method includes the following steps:

Step 1, on a transparent glass substrate, depositing an indium tin oxide (ITO) film with a thickness of 150 nm by magnetron sputtering;

Step 2. Submerge the substrate deposited with the ITO film in detergent, deionized water, acetone, and isopropanol for 15 minutes, then ultrasonically clean it for 15 minutes, dry it with a nitrogen gun, and clean the surface of the electrode with ultraviolet and ozone for 20 minutes. Obtain a transparent conductive electrode;

Step 3. In this embodiment, the first barrier layer is used as a hole barrier layer, which is a ZnO thin film; use 200 mesh ZnO powder, and perform thermal evaporation under a vacuum condition with an air pressure less than 1x10 ^-4 Pa, and the rotation rate of the substrate stage is 11RPM. The rate is controlled at 0.03nm/s, and the total film thickness is 20nm. Under the high temperature conditions of thermal evaporation of ZnO, element mismatch occurs, and the prepared ZnO film will be mixed with a small amount of Zn in a single state, thereby introducing chemical state defects, which serve as carrier traps at the interface between the barrier layer and the organic photosensitive layer. The group of ZnO barrier films does not have carrier traps.

Step 4. Use organic semiconductor materials PBDB-T and ITIC-Th as organic photosensitive layer materials, dissolve them in the organic solvent chlorobenzene at a mass ratio of 1:1, the total concentration of the solution is 30mg/ml, and place the solution at 50°C Stirring on a heated stirring table for more than 12h. In a nitrogen atmosphere, an organic photosensitive layer was prepared on the surface of the ZnO hole blocking layer by a spin-coating process. The spin-coating speed was 2000rpm, the acceleration was 10000rpm/s, and the time was 40s. It was annealed at 110°C for 10min under a nitrogen atmosphere. The thickness of the obtained organic photosensitive layer was about 200nm.

Step 5. In this embodiment, the second blocking layer is used as the electron blocking layer, and the material is MoO ₃ with a thickness of 10nm. It is prepared on the upper surface of the organic photosensitive layer by vacuum thermal evaporation, and the evaporation pressure is less than 1×10 ^-4 Pa.

Step 6. The top electrode layer in this embodiment is prepared by vacuum thermal evaporation on the surface of the electron blocking layer obtained in step 5. The electrode material is metallic silver (Ag), the evaporation pressure is less than 1x10 ^-4 Pa, and the film thickness is 100nm.

Prepare the control group according to the above steps, the device structure of the control group is the same as that of Example 1, but the first barrier layer of the control group is prepared by a spin coating process: the ZnO precursor solution is spin coated on the transparent bottom electrode, and the spin coating speed is 4000rpm. The acceleration is 10000rpm/s, the time is 40s; the thermal annealing treatment is carried out in the atmospheric environment, the thermal annealing temperature is 200°C, and the time is 30min. Therefore, no carrier trap is formed at the interface between the blocking layer and the organic photosensitive layer.

Fig. 2 is the XPS characterization result analysis diagram of the dual-mode organic photodiode based on the interface regulation of the barrier layer and its control group device shield ax barrier layer of the present invention, as shown in Fig. 2, the barrier layer prepared by the vacuum thermal evaporation method in Example 1 group Among them, the Auger spectrum of Zn contains two peaks of ZnO and Zn; while in the barrier layer prepared by spin coating process in the control group, the Auger spectrum of Zn only contains one peak of ZnO. This shows that the free Zn in the ZnO film prepared by vacuum thermal evaporation plays a role in the multiplication process as a chemical state defect, while the ZnO film prepared by the control spin coating method does not have this defect.

The mechanism of the present invention is as follows: by regulating the interface between the barrier layer and the organic photosensitive layer, carrier traps are formed on the interface, so that the photogenerated carriers are bound by the carrier traps at the interface between the barrier layer and the organic photosensitive layer, thereby triggering external Tunneling injection of circuit carriers. Taking a device with a carrier trap at the interface between the first barrier layer and the organic photosensitive layer as an example, as shown in Figure 3, the dual-mode organic photodiode based on the interface regulation of the barrier layer in Example 1 under reverse bias, due to The energy levels of the MoO3 barrier layer and the ZnO barrier layer are blocked, and the device has a lower dark current at this time; under the condition of light, the photogenerated electrons/holes in the organic photosensitive layer are respectively collected by the ITO/Ag electrode to generate a photogenerated current. The device operates in PV mode. Under forward bias, because the transport of carriers at the interface between the barrier layer and the organic photosensitive layer is hindered, compared with the control device without carrier traps at the interface between the barrier layer and the organic photosensitive layer, the dark current is reduced; Under the conditions, the carrier trap at the interface between the barrier layer and the organic photosensitive layer and the blocking of the ZnO layer make the photogenerated holes trapped at the ZnO/organic photosensitive layer interface, and the photogenerated electrons are blocked by the MoO3 layer, and then gather in the organic photosensitive layer/ MoO3 interface; as the photogenerated holes are captured and accumulated at the interface between the barrier layer and the organic photosensitive layer, the bending of the interface energy band is enhanced, and finally electron tunneling injection is induced, thereby producing the PM effect. Therefore, the dual-mode organic photodiode based on barrier layer interface modulation in Example 1 can work in PV and PM modes under reverse bias and forward bias, respectively.

Technical effect of the present invention is verified below by concrete test data:

The dual-mode organic photodiode based on barrier layer interface regulation in Example 1 and its control device were tested, and the test wavelength range was 300-800 nm. It can be seen from Figure 4 that the dual-mode organic photodiode device of Example 1 works in PV mode at -0.5V bias, at this time the EQE is lower than 100%; at +2V bias, the device can obtain more than 100% EQE , work in PM mode. The control device can only operate in PV mode under reverse bias.

Example 2

The difference between Example 2 and Example 1 is that carrier traps are also added at the interface between the organic photosensitive layer and the second barrier layer, and the process for forming the carrier traps is different from that of Example 1. Thermal annealing is used. form interface defects. In Example 2, there are carrier traps at the interface between the first barrier layer and the organic photosensitive layer, and at the interface between the organic photosensitive layer and the second barrier layer; in the control group, there are and only the organic photosensitive layer formed by thermal annealing and the second barrier layer Carrier traps at the interface. The specific experimental data are shown in Fig. 5, and the performance of the PM mode exceeds that of the device containing only any one of the carrier traps.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention within.

Claims (8)

1. A dual-mode organic photodiode based on barrier layer interface regulation, characterized in that it includes a bottom transparent substrate (1), a five-layer material structure above the transparent substrate (1), and the five-layer material structure includes: a transparent bottom electrode Layer (2), first barrier layer (3), organic photosensitive layer (4), second barrier layer (5), top electrode layer (6); Wherein, the transparent bottom electrode layer (2) covers half of the upper surface of the transparent substrate (1), the upper surface of the transparent bottom electrode layer (2) and the upper surface of the transparent substrate (1) not covered by the transparent bottom electrode layer (2) Covered by the first barrier layer (3), the organic photosensitive layer (4), the second barrier layer (5), and the top electrode layer (6) are sequentially above the first barrier layer (3); The interface between the first barrier layer (3) and/or the second barrier layer (5) and the organic photosensitive layer (4) has a carrier trap for accumulating carriers; under forward bias, the first The carrier trap at the interface between the barrier layer (3) and/or the second barrier layer (5) and the organic photosensitive layer (4) induces the tunneling injection of carriers in the external circuit, so that the dual mode based on barrier layer interface regulation The organic photodiode works in PM mode; under reverse bias, the first barrier layer (3) and the second barrier layer (5) on the upper and lower sides of the organic photosensitive layer (4) prevent the injection of carriers in the external circuit, so that The dual-mode organic photodiode based on barrier layer interface regulation works in PV mode. 2 . The dual-mode organic photodiode based on barrier layer interface modulation according to claim 1 , wherein the organic photosensitive layer comprises one or more organic semiconductor materials. 3. The dual-mode organic photodiode based on barrier layer interface regulation according to claim 1, characterized in that: the material of the organic photosensitive layer is selected from: poly([2,6-4,8-bis-((2-ethylhexyl)-thiophen-5-yl)benzo[1,2-B(PBDB-T), Poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-B:4,5-B'] Dithiophene])-ALT-(5,5-(1',3'-di-2-thiophene-5',7'-bis(2-ethylhexyl)benzo[1',2'-C: 4',5'-C']dithiophene-4,8-dione) (PM6), poly(3-hexylthiophene-2,5-diyl) (P3HT), 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(5-hexylthienyl)-dithieno[2,3-d:2' ,3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene (ITIC-Th), 2,2'-((12,13-bis(2-ethylhexyl)-12,13-dihydro-3,9-unicosyl bisthieno[2",3":4',5'] thieno[2',3':4,5]pyrrolo[3,2-e:2',3'-g][2,1,3]benzothiadiazole-2,10-diyl)bis(methine( 5,6-difluoro-3-oxo-1H-indene-2,1(3H)-diylidene))) bis(malononitrile) (Y6), [6,6]-Phenyl C61 butyric acid methyl ester 1-[3-(methoxycarbonyl)propyl]-1-phenyl-[6.6]C61 3′H-cyclopropane[1,9][5,6 ]fullerene-C60-IH-3′-butyric acid 3′-benzyl ester 3-phenyl-3H-cyclopropane[1,9][5,6]fullerene-C60-IH-3-butanol One or more of methyl esters (PC61BM). 4. The dual-mode organic photodiode based on barrier layer interface regulation according to claim 1, characterized in that the preparation process of the barrier layer is: the barrier layer material is evaporated, scraped, dripped, spin-coated or sprayed process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film, and the second barrier layer is coated on the upper surface of the organic photosensitive layer to form a thin film, and then the evaporation process control treatment, material doping, nanoimprinting, template growth, Thermal annealing or solvent annealing causes chemical state defects or morphology defects to be formed on the upper surface of the first barrier layer and/or the lower surface of the second barrier layer. 5. A dual-mode organic photodiode based on barrier layer interface regulation according to claim 4, characterized in that: the method for regulating the chemical state defect or the morphology defect comprises: regulating and controlling the evaporation rate for preparing the barrier layer, or Control doping material, or annealing treatment. 6. A kind of dual-mode organic photodiode based on barrier layer interface adjustment according to claim 1, characterized in that, the first barrier layer and the second barrier layer are electron barrier layers or hole barrier layers, and the electron barrier layer The layer material is selected from MoO3, PVK, poly-TPD, P3HT and PEDOT:PSS, and the hole blocking layer material is selected from ZnO, TiO2, PEIE, PEIE-Zn, LiF and SeO2. 7 . The dual-mode organic photodiode based on barrier layer interface regulation according to claim 1 , characterized in that, the thickness of the organic photosensitive layer ( 4 ) is 100 nm˜2000 nm. 8. The preparation method of the dual-mode organic photodiode based on barrier layer interface regulation according to any one of claims 1 to 7, characterized in that it comprises the steps of: Step 1. Depositing a transparent bottom electrode on a transparent substrate by magnetron sputtering, thermal evaporation, or electron beam evaporation; Step 2, cleaning the transparent bottom electrode to remove impurities; Step 3. Apply the material of the barrier layer by evaporation, or scrape coating, or drop coating, or spin coating or spraying process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film, and then the evaporation process is controlled and processed, and the material Doping, nanoimprinting, template growth, thermal annealing or solvent annealing to form chemical state defects or defect morphology on the upper surface of the first barrier layer and/or the lower surface of the second barrier layer; Step 4, the organic photosensitive layer is coated on the upper surface of the first barrier layer by spin coating, or evaporation, or scraping, or drop coating, or spraying process; Step 5, apply the barrier layer material by evaporation, or scrape coating, or drop coating, or spin coating or spraying process, so that the first barrier layer is coated on the upper surface of the bottom electrode layer to form a thin film; Step 6. Deposit the top electrode by magnetron sputtering, or thermal evaporation, or electron beam evaporation.

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