[go: up one dir, main page]

CN116155206A - Ultra-wideband heterogeneous active mixer - Google Patents

Ultra-wideband heterogeneous active mixer Download PDF

Info

Publication number
CN116155206A
CN116155206A CN202310101467.4A CN202310101467A CN116155206A CN 116155206 A CN116155206 A CN 116155206A CN 202310101467 A CN202310101467 A CN 202310101467A CN 116155206 A CN116155206 A CN 116155206A
Authority
CN
China
Prior art keywords
transistor
capacitor
common
resistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310101467.4A
Other languages
Chinese (zh)
Inventor
王勇
李鑫炎
马殊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN202310101467.4A priority Critical patent/CN116155206A/en
Publication of CN116155206A publication Critical patent/CN116155206A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

本发明属于无线通讯技术领域,具体为一种超宽带异构有源混频器。包括射频输入级、本振输入级、吉尔伯特混频核心和中频输出级。通过改变混频器开关管偏置电压,实现有源混频器在共源共栅放大器结构与吉尔伯特混频器结构之间的异构,进而实现低频频段的直通模式和高频频段的混频模式的切换。通过射频输入级和本振输入级宽带匹配设计,扩展了吉尔伯特有源混频器的工作带宽;在本振输入级采用单端转差分放大器电路设计,简化了差分信号产生电路的设计、降低了对本振信号的功率要求。与现有技术相比,本发明在简化系统设计的同时,实现了混频频段内4.3~6.3dB的转换增益与直通频段内6.5~10dB的增益,减轻了后续链路的设计压力。

Figure 202310101467

The invention belongs to the technical field of wireless communication, in particular to an ultra-wideband heterogeneous active mixer. Includes RF input stage, LO input stage, Gilbert mixer core and IF output stage. By changing the bias voltage of the switch tube of the mixer, the heterogeneity of the active mixer between the cascode amplifier structure and the Gilbert mixer structure is realized, and then the direct mode of the low frequency band and the high frequency band are realized. Mixing mode switching. Through the broadband matching design of the RF input stage and the local oscillator input stage, the operating bandwidth of the Gilbert active mixer is expanded; the single-ended to differential amplifier circuit design is adopted at the local oscillator input stage, which simplifies the design of the differential signal generation circuit and reduces The power requirements for the local oscillator signal are specified. Compared with the prior art, while simplifying the system design, the present invention realizes a conversion gain of 4.3-6.3dB in the mixing frequency band and a gain of 6.5-10dB in the pass-through frequency band, thereby reducing the design pressure of subsequent links.

Figure 202310101467

Description

一种超宽带异构有源混频器A UWB Heterogeneous Active Mixer

技术领域technical field

本发明属于无线通讯技术领域,具体涉及一种超宽带异构有源混频器。The invention belongs to the technical field of wireless communication, and in particular relates to an ultra-wideband heterogeneous active mixer.

背景技术Background technique

混频器是射频前端电路中的一个关键模块,用于实现信号频率的变换。在不同的接收机系统架构中,从天线接收下来的射频信号,往往都需要由射频前端的混频器进行射频频率到中频频率的变频。因此,混频器对于整个接收机系统非常重要。The mixer is a key module in the RF front-end circuit, which is used to realize the conversion of signal frequency. In different receiver system architectures, the RF signal received from the antenna often needs to be converted from the RF frequency to the IF frequency by the mixer at the RF front-end. Therefore, the mixer is very important to the overall receiver system.

随着无线通信系统的发展,通讯终端设备往往需要多种无线通讯技术共存,以满足不同的通讯功能需求。这就导致了超宽带接收机芯片的需求不断增加,特别是要求在很宽的频带范围内实时接收信号的应用场景中,如电磁频谱监测设备等。传统的超宽带接收机通过将多个分别工作于不同频段的接收机并行使用,来实现宽带覆盖,但是这样的方式存在着重复使用混频器这种通用模块的情况,从而导致设备体积、功耗与成本大幅提升。With the development of wireless communication systems, communication terminal equipment often requires the coexistence of multiple wireless communication technologies to meet different communication function requirements. This has led to an increasing demand for ultra-wideband receiver chips, especially in application scenarios that require real-time signal reception within a wide frequency band, such as electromagnetic spectrum monitoring equipment. Traditional ultra-wideband receivers achieve broadband coverage by using multiple receivers working in different frequency bands in parallel. However, in this way, there is a situation in which a common module such as a mixer is reused, resulting in equipment size, power consumption, etc. Consumption and cost increased significantly.

此外,接收机在实现超宽带信号接收时,对不同频段信号具有不同的需求。对于低频段信号,可直接放大后接收;对于高频段信号,则需要将放大的信号下变频至中频频率后再进行接收。为满足这一需求,目前采用开关切换的方式实现,但是这种方式存在面积大、功耗大、结构复杂的问题。In addition, when the receiver implements ultra-wideband signal reception, it has different requirements for signals in different frequency bands. For low frequency band signals, it can be directly amplified and then received; for high frequency band signals, it is necessary to down-convert the amplified signal to an intermediate frequency before receiving it. In order to meet this requirement, a switching method is currently used, but this method has the problems of large area, high power consumption, and complex structure.

因此,研究一种可以实现配置灵活的超宽带异构混频器,对解决上述问题具有重要意义。Therefore, it is of great significance to study an ultra-wideband heterogeneous mixer that can realize flexible configuration to solve the above problems.

发明内容Contents of the invention

本发明的目的在于提供一种超宽带异构有源混频器,以满足在超宽带应用场景下实现直通与变频的灵活配置,满足移动通信、电磁检测等接收系统中的下变频需求,有助于设备的小型化、低功耗和低成本。The purpose of the present invention is to provide an ultra-wideband heterogeneous active mixer to meet the flexible configuration of direct pass-through and frequency conversion in ultra-wideband application scenarios, and to meet the down-conversion requirements in receiving systems such as mobile communication and electromagnetic detection. Contribute to miniaturization, low power consumption and low cost of equipment.

为实现上述目的,本发明采用如下技术方案:To achieve the above object, the present invention adopts the following technical solutions:

一种超宽带异构有源混频器,包括射频输入级、本振输入级、吉尔伯特混频核心和中频输出级;An ultra-wideband heterogeneous active mixer comprising a radio frequency input stage, a local oscillator input stage, a Gilbert mixing core and an intermediate frequency output stage;

所述射频输入级用于接收天线端口输入的射频信号,并对接收的射频信号进行阻抗变换与宽带匹配后传输至吉尔伯特混频核心;The radio frequency input stage is used to receive the radio frequency signal input by the antenna port, and perform impedance transformation and broadband matching on the received radio frequency signal and transmit it to the Gilbert mixing core;

所述本振输入级用于接收单端本振信号,将接收的单端本振信号进行放大并转换为等幅反相差分本振信号传输至吉尔伯特混频核心;The local oscillator input stage is used to receive a single-ended local oscillator signal, amplify the received single-ended local oscillator signal and convert it into an equal-amplitude anti-phase differential local oscillator signal and transmit it to the Gilbert mixing core;

所述吉尔伯特混频核心连接射频输入级和本振输入级,用于将射频输入级提供的射频信号与本振输入级提供的差分本振信号混合为中频信号,同时实现混频模式与直通模式的切换;The Gilbert mixing core is connected to the radio frequency input stage and the local oscillator input stage, and is used to mix the radio frequency signal provided by the radio frequency input stage and the differential local oscillator signal provided by the local oscillator input stage into an intermediate frequency signal, and simultaneously realize the mixing mode and Switching of direct mode;

所述中频输出级连接吉尔伯特混频核心,用于对收到的中频信号进行阻抗变换与宽带匹配后输出,同时抑制射频与本振泄露。The intermediate frequency output stage is connected to the Gilbert frequency mixing core, and is used for performing impedance transformation and broadband matching on the received intermediate frequency signal and outputting it, while suppressing radio frequency and local oscillator leakage.

进一步地,所述射频输入级包括电容C10和电容C11,传输线TL4、传输线TL5和传输线TL6,电阻R19和电阻R20,晶体管M17和晶体管M18Further, the radio frequency input stage includes a capacitor C 10 and a capacitor C 11 , a transmission line TL 4 , a transmission line TL 5 and a transmission line TL 6 , a resistor R 19 and a resistor R 20 , a transistor M 17 and a transistor M 18 ;

电容C10依次经传输线TL4、传输线TL5与晶体管M17的栅极相连,电容C11的一端连接传输线TL4与传输线TL5的共接点,另一端接地;电阻R19的一端连接在传输线TL5与晶体管M17的栅极之间,另一端经传输线TL6接偏置电压Vb11;电阻R20的一端接偏置电压Vb12,另一端连接晶体管M18的栅极;晶体管M17的漏极接供电VDD,源极与晶体管M18的漏极相连后作为射频输入级的输出端;晶体管M18的源极接地。The capacitor C10 is connected to the gate of the transistor M17 through the transmission line TL4 and the transmission line TL5 in turn, one end of the capacitor C11 is connected to the common contact point of the transmission line TL4 and the transmission line TL5 , and the other end is grounded; one end of the resistor R19 is connected to the transmission line Between TL 5 and the gate of transistor M 17 , the other end is connected to bias voltage V b11 through transmission line TL 6 ; one end of resistor R 20 is connected to bias voltage V b12 , and the other end is connected to the gate of transistor M 18 ; transistor M 17 The drain of the transistor M18 is connected to the power supply VDD, and the source is connected to the drain of the transistor M18 as the output terminal of the radio frequency input stage; the source of the transistor M18 is grounded.

更进一步的,所述电容C10、电容C11、传输线TL4、传输线TL5、传输线TL6和电阻R19构成用于实现阻抗匹配的射频输入匹配网络,电阻R19、电阻R20、传输线TL6、晶体管M17和晶体管M18构成共漏放大器单元一。Furthermore, the capacitor C 10 , capacitor C 11 , transmission line TL 4 , transmission line TL 5 , transmission line TL 6 and resistor R 19 constitute a radio frequency input matching network for impedance matching, and the resistor R 19 , resistor R 20 , transmission line TL 6 , transistor M 17 and transistor M 18 constitute a common-drain amplifier unit one.

进一步的,所述本振输入级包括输入共漏放大器、差分共源放大器和输出共漏放大器;Further, the local oscillator input stage includes an input common-drain amplifier, a differential common-source amplifier and an output common-drain amplifier;

所述输入共漏放大器包括电容C3和共漏放大器单元二;电容C3一端接本振输入,另一端连接共漏放大器单元二输入;共漏放大器单元二包括电阻R8、电阻R9、传输线TL1、晶体管M8和晶体管M9;电阻R8的一端与晶体管M8的栅极共接后作为共漏放大器单元二输入端连接电容C3的另一端,另一端经传输线TL1接偏置电压Vb5;电阻R9的一端接偏置电压Vb6,另一端连接晶体管M9的栅极;晶体管M8的漏极接供电VDD,源极与晶体管M9的漏极相连后作为共漏放大器单元二的输出端连接差分共源放大器的输入端;晶体管M9的源极接地。共漏放大器单元二与共漏放大器单元一结构相同,参数有所调整;The input common-drain amplifier includes a capacitor C3 and a common-drain amplifier unit two; one end of the capacitor C3 is connected to the local oscillator input, and the other end is connected to the second input of the common-drain amplifier unit; the second common-drain amplifier unit includes a resistor R8 , a resistor R9 , Transmission line TL 1 , transistor M 8 and transistor M 9 ; one end of resistor R 8 is connected with the gate of transistor M 8 in common as the second input end of the common drain amplifier unit connected to the other end of capacitor C 3 , and the other end is connected to the other end of capacitor C 3 through transmission line TL 1 Bias voltage V b5 ; one end of resistor R 9 is connected to bias voltage V b6 , and the other end is connected to the gate of transistor M 9 ; the drain of transistor M 8 is connected to power supply VDD, and the source is connected to the drain of transistor M 9 as The output terminal of the common-drain amplifier unit 2 is connected to the input terminal of the differential common-source amplifier; the source of the transistor M9 is grounded. Common drain amplifier unit 2 has the same structure as common drain amplifier unit 1, and the parameters have been adjusted;

所述差分共源放大器包括电容C4和电容C5,电阻R10、电阻R11、电阻R12、电阻R13和电阻R14,晶体管M10、晶体管M11和晶体管M12,传输线TL2和传输线TL3;电容C4的一端接输入共漏放大器输出,另一端连接晶体管M10的栅极;电容C5的一端连接晶体管M11的栅极,另一端接地;电阻R10串联传输线TL2,传输线TL2另一端接供电VDD;电阻R11串联传输线TL3,传输线TL3另一端接供电VDD;电阻R12的一端连接在电容C4与晶体管M10的栅极之间,另一端接偏置电压Vb7;电阻R13的一端连接在电容C5与晶体管M11的栅极之间,另一端接偏置电压Vb7;电阻R14的一端连接晶体管M12的栅极,另一端接偏置电压Vb8;晶体管M10的漏极接电阻R10后作为差分共源放大器的第一输出端,源极连接晶体管M12的漏极;晶体管M11的漏级连接电阻R11后作为差分共源放大器的第二输出端,源极连接晶体管M12的漏极;晶体管M12的源极接地。The differential common source amplifier includes capacitors C4 and C5 , resistors R10 , R11 , R12, R13 and R14 , transistor M10 , transistor M11 and transistor M12 , transmission line TL2 and the transmission line TL 3 ; one end of the capacitor C 4 is connected to the output of the common drain amplifier, and the other end is connected to the gate of the transistor M 10 ; one end of the capacitor C 5 is connected to the gate of the transistor M 11 , and the other end is grounded; the resistor R 10 is connected in series to the transmission line TL 2 , the other end of the transmission line TL 2 is connected to the power supply VDD; the resistor R 11 is connected in series to the transmission line TL 3 , and the other end of the transmission line TL 3 is connected to the power supply VDD; one end of the resistor R 12 is connected between the capacitor C 4 and the gate of the transistor M 10 , and the other end connected to the bias voltage V b7 ; one end of the resistor R 13 is connected between the capacitor C 5 and the gate of the transistor M 11 , and the other end is connected to the bias voltage V b7 ; one end of the resistor R 14 is connected to the gate of the transistor M 12, and the other end is connected to the gate of the transistor M 12 One terminal is connected to the bias voltage V b8 ; the drain of the transistor M10 is connected to the resistor R10 as the first output terminal of the differential common source amplifier, and the source is connected to the drain of the transistor M12 ; the drain of the transistor M11 is connected to the resistor R11 Finally, as the second output terminal of the differential common source amplifier, the source is connected to the drain of the transistor M12 ; the source of the transistor M12 is grounded.

所述输出共漏放大器包括共漏放大器单元三、共漏放大器单元四、电容C8和电容C9;共漏放大器单元三包括电容C6,电阻R15和电阻R16,晶体管M13和晶体管M14;电容C6的一端作为共漏放大器单元三的输入端,接差分共源放大器的第一输出端,另一端连接晶体管M13的栅极;电阻R15的一端连接晶体管M13的栅极和电容C6,另一端接偏置电压Vb9;电阻R16的一端连接晶体管M14的栅极,另一端接偏置电压Vb10;晶体管M13的漏极接供电VDD,源极连接晶体管M14的漏极后作为共漏放大器单元三的输出端;晶体管M14的源极接地;The output common drain amplifier includes common drain amplifier unit three, common drain amplifier unit four, capacitor C8 and capacitor C9 ; common drain amplifier unit three includes capacitor C6 , resistor R15 and resistor R16 , transistor M13 and transistor M 14 ; one end of the capacitor C 6 is used as the input end of the common drain amplifier unit three, connected to the first output end of the differential common source amplifier, and the other end is connected to the gate of the transistor M 13 ; one end of the resistor R 15 is connected to the gate of the transistor M 13 pole and capacitor C 6 , and the other end is connected to the bias voltage V b9 ; one end of the resistor R 16 is connected to the gate of the transistor M 14 , and the other end is connected to the bias voltage V b10 ; the drain of the transistor M 13 is connected to the power supply VDD, and the source is connected to The drain of the transistor M 14 is used as the output terminal of the common drain amplifier unit three; the source of the transistor M 14 is grounded;

共漏放大器单元四和共漏放大器单元三结构相同,参数相同,共漏放大器单元四的输入端接差分共源放大器的第二输出端;The common drain amplifier unit four and the common drain amplifier unit three have the same structure and the same parameters, and the input terminal of the common drain amplifier unit four is connected to the second output end of the differential common source amplifier;

电容C8和电容C9容值相同;电容的一端连接共漏放大器单元三的输出端,另一端作为本振第一输出端LO_OUT+;电容C9一端接共漏放大器单元四的输出端,另一端作为本振第二输出端LO_OUT-。Capacitor C 8 and capacitor C 9 have the same capacitance value; one end of the capacitor is connected to the output end of common drain amplifier unit three, and the other end is used as the first output end LO_OUT+ of the local oscillator; one end of capacitor C 9 is connected to the output end of common drain amplifier unit four, and the other end is connected to the output end of common drain amplifier unit four. One end serves as the second output end LO_OUT- of the local oscillator.

更进一步地,所述差分共源放大器结构对称,电容C4、电阻R12、晶体管M10、电阻R10、传输线TL2与电容C5、电阻R13、晶体管M11、电阻R11、传输线TL3对应器件参数相同。Further, the structure of the differential common source amplifier is symmetrical, capacitor C 4 , resistor R 12 , transistor M 10 , resistor R 10 , transmission line TL 2 and capacitor C 5 , resistor R 13 , transistor M 11 , resistor R 11 , transmission line TL 3 corresponds to the same device parameters.

更进一步地,本振第一输出端LO_OUT+和本振第二输出端LO_OUT-输出的信号幅值相同,相位相差180°。Furthermore, the amplitudes of the signals output by the first local oscillator output terminal LO_OUT+ and the local oscillator second output terminal LO_OUT- are the same, and the phases are different by 180°.

进一步地,所述吉尔伯特混频核心包括晶体管M1、晶体管M2、晶体管M3、晶体管M4、晶体管M5、晶体管M6和晶体管M7,电阻R1、电阻R2、电阻R3、电阻R4、电阻R5、电阻R6和电阻R7,电容C1和电容C2Further, the Gilbert frequency mixing core includes transistor M 1 , transistor M 2 , transistor M 3 , transistor M 4 , transistor M 5 , transistor M 6 and transistor M 7 , resistor R 1 , resistor R 2 , resistor R 3. Resistor R 4 , resistor R 5 , resistor R 6 and resistor R 7 , capacitor C 1 and capacitor C 2 ;

晶体管M1的栅极、晶体管M4的栅极和电阻R3一端相连后,作为吉尔伯特混频核心的第一输入端与本振第一输出端连接;晶体管M2的栅极、晶体管M3的栅极和电阻R4一端相连后,作为吉尔伯特混频核心的第二输入端与本振第二输出端连接;电阻R3另一端接偏置电压Vb1,电阻R4另一端接偏置电压Vb2After the gate of transistor M1 and the gate of transistor M4 are connected to one end of resistor R3 , the first input end of the Gilbert mixing core is connected to the first output end of the local oscillator; the gate of transistor M2 , transistor After the gate of M3 is connected to one terminal of resistor R4 , the second input terminal of the Gilbert mixer core is connected to the second output terminal of the local oscillator; the other terminal of resistor R3 is connected to the bias voltage V b1 , and the other terminal of resistor R4 is connected to One end is connected with bias voltage V b2 ;

晶体管M1的漏极、晶体管M3的漏极和电阻R1的一端相连,晶体管M2的漏极、晶体管M4的漏极和电阻R2的一端相连后作为吉尔伯特混频核心的输出端;电阻R1和电阻R2另一端接供电VDD;The drain of the transistor M1 and the drain of the transistor M3 are connected to one end of the resistor R1 , and the drains of the transistor M2 and the drain of the transistor M4 are connected to one end of the resistor R2 to serve as the Gilbert mixing core Output terminal; the other end of resistor R 1 and resistor R 2 is connected to power supply VDD;

晶体管M1和晶体管M2源极相连后与晶体管M5的漏极连接,晶体管M3和晶体管M4源极相连后与晶体管M6的漏极连接;The transistor M1 and the source of the transistor M2 are connected to the drain of the transistor M5 , and the source of the transistor M3 and the transistor M4 are connected to the drain of the transistor M6 ;

晶体管M5的栅极连接电阻R5的一端与电容C1的一端,晶体管M6的栅极连接电阻R6的一端与电容C2的一端;晶体管M5与晶体管M6的源极相连后与晶体管M7的漏极连接;晶体管M7栅极接电阻R7的一端,源极接地;The gate of the transistor M5 is connected to one end of the resistor R5 and one end of the capacitor C1 , and the gate of the transistor M6 is connected to one end of the resistor R6 and one end of the capacitor C2 ; after the transistor M5 is connected to the source of the transistor M6 Connected to the drain of the transistor M7 ; the gate of the transistor M7 is connected to one end of the resistor R7 , and the source is grounded;

电容C1另一端接射频输入级的输出端,电阻R5另一端接偏置电压Vb3;电容C2的另一端接地,电阻R6的另一端接偏置电压Vb3;电阻R7的另一端接偏置电压Vb4The other end of the capacitor C 1 is connected to the output end of the RF input stage, the other end of the resistor R 5 is connected to the bias voltage V b3 ; the other end of the capacitor C 2 is grounded, and the other end of the resistor R 6 is connected to the bias voltage V b3 ; the other end of the resistor R 7 is connected to the bias voltage V b3 . The other end is connected to the bias voltage V b4 .

更进一步地,偏置电压Vb1与偏置电压Vb2为超宽带异构有源混频器的直通模式与混频模式切换控制电压,晶体管M1、晶体管M2、晶体管M3、晶体管M4作为混频器开关管,实现混频功能。Furthermore, the bias voltage V b1 and the bias voltage V b2 are the switching control voltages of the direct mode and the mixing mode of the ultra-wideband heterogeneous active mixer, and the transistor M 1 , the transistor M 2 , the transistor M 3 , and the transistor M 4 as a mixer switching tube to realize the mixing function.

更进一步地,吉尔伯特混频核心结构对称,晶体管M1、晶体管M2、晶体管M3、晶体管M4参数相同;晶体管M5与晶体管M6参数相同;电阻R1与电阻R2参数相同,电阻R3与电阻R4参数相同,电阻R5与电阻R6参数相同;电容C1和电容C2参数相同。Furthermore, the core structure of the Gilbert mixer is symmetrical, and the parameters of transistor M 1 , transistor M 2 , transistor M 3 , and transistor M 4 are the same; the parameters of transistor M 5 and transistor M 6 are the same; the parameters of resistor R 1 and resistor R 2 are the same , the parameters of the resistor R3 and the resistor R4 are the same, the parameters of the resistor R5 and the resistor R6 are the same; the parameters of the capacitor C1 and the capacitor C2 are the same.

进一步地,所述中频输出级包括共漏放大器单元五、电阻R23、四阶低通滤波器、电容C15Further, the intermediate frequency output stage includes a common drain amplifier unit five, a resistor R 23 , a fourth-order low-pass filter, and a capacitor C 15 ;

共漏放大器单元五的输入端接吉尔伯特混频核心的输出端,输出端连接电阻R23的一端;共漏放大器单元五和共漏放大器单元三结构相同,参数根据需求调整;电阻R23的另一端连接四阶低通滤波器的输入端;四阶低通滤波器的输出端连接电容C15的一端;电容C15的另一端连接中频输出级的输出端;The input terminal of the common drain amplifier unit 5 is connected to the output terminal of the Gilbert mixer core, and the output terminal is connected to one end of the resistor R 23 ; the structure of the common drain amplifier unit 5 and the common drain amplifier unit 3 is the same, and the parameters are adjusted according to requirements; the resistor R 23 The other end of the other end is connected to the input end of the fourth-order low-pass filter; the output end of the fourth-order low-pass filter is connected to one end of the capacitor C 15 ; the other end of the capacitor C 15 is connected to the output end of the intermediate frequency output stage;

所述四阶低通滤波器包括电感L1、电容C13、电感L2和电容C14,电感L1的一端作为四阶低通滤波器的输入端连接电阻R23,另一端连接电感L2的一端和电容C13的一端,电感L2的一端与电容C14的一端相连后作为四阶低通滤波器的输出端,电容C13的另一端和电容C14的另一端分别接地。The fourth-order low-pass filter includes an inductor L 1 , a capacitor C 13 , an inductor L 2 and a capacitor C 14 , one end of the inductor L 1 is used as the input end of the fourth-order low-pass filter to connect to the resistor R 23 , and the other end is connected to the inductor L One end of 2 and one end of capacitor C13 , one end of inductor L2 and one end of capacitor C14 are connected to serve as the output end of the fourth-order low-pass filter, and the other end of capacitor C13 and the other end of capacitor C14 are respectively grounded.

采用上述技术方案后,本发明具有了以下有益效果:After adopting the above technical scheme, the present invention has the following beneficial effects:

1、本发明实现了有源混频器低频直通和高频混频的灵活配置,通过改变混频器开关管(晶体管M1、晶体管M2、晶体管M3和晶体管M4)偏置电压,实现有源混频器在共源共栅放大器结构与吉尔伯特混频器结构之间的异构,进而实现低频频段的直通模式和高频频段的混频模式的切换。1. The present invention realizes the flexible configuration of the low-frequency pass-through and high-frequency mixing of the active mixer. By changing the bias voltage of the mixer switch tube (transistor M 1 , transistor M 2 , transistor M 3 and transistor M 4 ), Realize the heterogeneity of the active mixer between the cascode amplifier structure and the Gilbert mixer structure, and then realize the switching between the direct mode of the low frequency band and the mixing mode of the high frequency band.

2、本发明通过射频输入级和本振输入级宽带匹配设计,极大地扩展了吉尔伯特有源混频器的工作带宽,其混频带宽为4.5~18GHz,直通带宽为0.2~4.5GHz;采用本振输入级单端转差分放大器电路设计,简化了差分信号产生电路的设计,也降低了对本振信号的功率要求;中频输出级配置有四阶低通滤波器,提高了射频到中频的隔离度和本振到中频的隔离度。2. The present invention greatly expands the operating bandwidth of the Gilbert active mixer through the broadband matching design of the radio frequency input stage and the local oscillator input stage. The mixing bandwidth is 4.5-18GHz, and the direct bandwidth is 0.2-4.5GHz; The design of the local oscillator input stage single-ended to differential amplifier circuit simplifies the design of the differential signal generation circuit and reduces the power requirements for the local oscillator signal; the intermediate frequency output stage is equipped with a fourth-order low-pass filter, which improves the isolation from radio frequency to intermediate frequency degree and LO-to-IF isolation.

3、本发明的有源混频器三个端口均为单端输入,简化系统设计;同时实现了混频频段内4.3~6.3dB的转换增益与直通频段内6.5~10dB的增益,减轻了后续链路的设计压力。3. The three ports of the active mixer of the present invention are all single-ended inputs, which simplifies the system design; at the same time, the conversion gain of 4.3-6.3dB in the mixing frequency band and the gain of 6.5-10dB in the direct frequency band are realized, which reduces the subsequent Link design stress.

附图说明Description of drawings

图1为本发明超宽带异构有源混频器的结构框图;Fig. 1 is the structural block diagram of the ultra-wideband heterogeneous active mixer of the present invention;

图2为实施例射频输入级电路结构图;Fig. 2 is the circuit structure diagram of the radio frequency input stage of the embodiment;

图3为实施例本振输入级电路结构图;Fig. 3 is the structural diagram of the circuit structure of the local oscillator input stage of the embodiment;

图4为实施例吉尔伯特混频核心电路结构图;Fig. 4 is embodiment Gilbert mixer core circuit structural diagram;

图5为实施例中频输出级电路结构图;Fig. 5 is the structure diagram of the intermediate frequency output stage circuit of the embodiment;

图6为实施例超宽带异构有源混频器的转换增益仿真结果图;FIG. 6 is a diagram of the conversion gain simulation results of the ultra-wideband heterogeneous active mixer of the embodiment;

图7为实施例超宽带异构有源混频器的直通增益仿真结果图;FIG. 7 is a diagram of the simulation results of the through gain of the ultra-wideband heterogeneous active mixer of the embodiment;

图8为实施例超宽带异构有源混频器的隔离度仿真结果图。Fig. 8 is a diagram of the isolation simulation results of the ultra-wideband heterogeneous active mixer of the embodiment.

具体实施方式Detailed ways

为使本发明的目的、技术方案和优点更加清楚,下面结合实施例和附图,对本发明作进一步地详细描述。In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and accompanying drawings.

如图1所示,本实施例提供一种超宽带异构有源混频器,是在传统吉尔伯特有源混频器的基础上增加了射频输入级、本振输入级和中频输出级,同时增加了控制电压以实现混频模式与直通模式的切换,从而实现有源混频器的异构;所述射频输入级用于实现阻抗变换与宽带匹配,其输入端为RF;所述本振输入级用于将单端本振信号放大并转换为等幅反相差分本振信号,其输入端为LO;所述吉尔伯特混频核心用于将射频信号与本振信号混合为中频信号,同时实现混频模式与直通模式的切换;所述中频输出级用于实现阻抗变换与宽带匹配,同时抑制射频与本振泄露,其输出端为IF。As shown in Figure 1, this embodiment provides an ultra-wideband heterogeneous active mixer, which adds a radio frequency input stage, a local oscillator input stage and an intermediate frequency output stage on the basis of a traditional Gilbert active mixer. At the same time, the control voltage is added to realize the switching between the mixing mode and the direct mode, so as to realize the heterogeneity of the active mixer; the radio frequency input stage is used to realize impedance transformation and broadband matching, and its input terminal is RF; The oscillator input stage is used to amplify the single-ended local oscillator signal and convert it into an equal-amplitude anti-phase differential local oscillator signal, and its input terminal is LO; the Gilbert mixing core is used to mix the radio frequency signal and the local oscillator signal into an intermediate frequency signal, and realize the switching between the mixing mode and the direct mode at the same time; the intermediate frequency output stage is used to realize impedance transformation and broadband matching, and suppress the leakage of radio frequency and local oscillator at the same time, and its output terminal is IF.

射频输入级包括射频输入匹配网络和共漏放大器;本振输入级包括输入共漏放大器、差分共源放大器和输出共漏放大器;吉尔伯特混频核心包括射频输入隔直电容、吉尔伯特混频器结构、偏置网络和电流源电路;中频输出级包括共漏放大器、串联电阻、四阶低通滤波器和隔直电容。The RF input stage includes a RF input matching network and a common-drain amplifier; the local oscillator input stage includes an input common-drain amplifier, a differential common-source amplifier, and an output common-drain amplifier; frequency converter structure, bias network and current source circuit; the intermediate frequency output stage includes common drain amplifier, series resistance, fourth-order low-pass filter and DC blocking capacitor.

如图2所示。射频输入级中电阻R19和传输线TL6串联网络既属于射频输入匹配网络,又作为共漏放大器栅极偏置电路。射频输入匹配网络中的传输线的线长和线宽、电阻阻值和电容容值根据需要设计,以实现电路的超宽带匹配。as shown in picture 2. The series network of resistor R 19 and transmission line TL 6 in the RF input stage not only belongs to the RF input matching network, but also serves as the gate bias circuit of the common drain amplifier. The line length and line width of the transmission line in the RF input matching network, the resistance value of the resistor and the capacitance value of the capacitor are designed according to the needs, so as to realize the ultra-wideband matching of the circuit.

如图3所示,本振输入级输入共漏放大器中C3为隔直电容,传输线TL1与电阻R8串联网络既作为本振输入匹配网络,又作为共漏放大器栅极偏置电路,从而实现晶体管的栅极馈电与电路的超宽带匹配。差分共源放大器采用全对称电路结构,其单端输入,另一输入端经过隔直电容后接地;双端输出后接输出共漏放大器。差分共源放大器双端输出的信号幅值相同、相位相差180°,因此该电路实现了本振信号的单端转差分。输出共漏放大器两个放大器单元结构相同,将差分信号馈入吉尔伯特混频核心中。As shown in Figure 3, C3 in the input common drain amplifier of the local oscillator input stage is a DC blocking capacitor, and the series network of the transmission line TL1 and the resistor R8 is used not only as the local oscillator input matching network, but also as the gate bias circuit of the common drain amplifier. In this way, the grid feed of the transistor is matched with the ultra-wideband of the circuit. The differential common-source amplifier adopts a fully symmetrical circuit structure, and its single-ended input is grounded after passing through a DC blocking capacitor; the double-ended output is connected to an output common-drain amplifier. The amplitude of the signals output by the two ends of the differential common source amplifier is the same, and the phase difference is 180°, so the circuit realizes the single-ended to differential conversion of the local oscillator signal. Output Common Drain Amplifier The two amplifier units are identical in structure and feed the differential signal into the Gilbert mixer core.

射频输入级与本振输入级实现了超宽带的电路匹配,具体地,本实施例中实现了4.5~18GHz的混频带宽和0.2~4.5GHz的直通带宽,射频输入信号总带宽为0.2~18GHz。The RF input stage and the local oscillator input stage realize ultra-wideband circuit matching. Specifically, in this embodiment, a mixing bandwidth of 4.5-18 GHz and a pass-through bandwidth of 0.2-4.5 GHz are realized, and the total bandwidth of the RF input signal is 0.2-18 GHz .

吉尔伯特混频核心如图4所示,其包括四个作为混频器开关管的晶体管M1、晶体管M2、晶体管M3和晶体管M4;两个跨导放大器晶体管M5和M6;电流源晶体管M7;偏置电阻R3、R4、R5、R6和R7;负载电阻R1和R2;隔直电容C1和C2。为了减少寄生电容带来的高频损耗,需要选择小尺寸混频器开关管。The Gilbert frequency mixing core is shown in Figure 4, which includes four transistors M1, transistor M2, transistor M3 and transistor M4 as mixer switch tubes; two transconductance amplifier transistors M5 and M6 ; current source transistor M7 ; bias resistors R3 , R4, R5, R6 and R7; load resistors R1 and R2; DC blocking capacitors C1 and C2. In order to reduce the high-frequency loss caused by parasitic capacitance, it is necessary to select a small-sized mixer switch tube.

其中,晶体管M1的栅极、晶体管M4的栅极和电阻R3相连后与本振第一端输出连接,晶体管M2的栅极、晶体管M3的栅极和电阻R4相连后与本振第二端输出连接;晶体管M1的漏极、晶体管M3的漏极和电阻R1相连,晶体管M2的漏极、晶体管M4的漏极和电阻R2相连后作为吉尔伯特混频核心的输出端,以用于输出中频信号;晶体管M1和晶体管M2源极相连后与晶体管M5的漏极连接,晶体管M3和晶体管M4源极相连后与晶体管M6的漏极连接。晶体管M5和M6构成差分共源放大器,实现了射频信号的单端转差分,并且提高了转换增益,减轻了后续链路的设计压力。通过对晶体管M1和M4的栅极电压Vb1与晶体管M2和M3的栅极电压Vb2的控制,可以灵活的实现混频模式与直通模式的切换。本实施例中,当电压Vb1等于电压Vb2都为2.3V时,该电路为完整的吉尔伯特混频单元,处于混频模式,本振信号正常馈入;当电压Vb1为-1V,电压Vb2为2.8V时,晶体管M1和M4关断,晶体管M2和M3导通,晶体管M5与晶体管M2构成共源共栅放大器,实现直通模式,此时无本振信号馈入。采用有源吉尔伯特混频结构,通过差分共源放大器,实现了混频频段内4.3~6.3dB的转换增益与直通频段内6.5~10dB的直通增益。Wherein, the gate of the transistor M1 , the gate of the transistor M4 are connected with the resistor R3 and then connected to the output of the first end of the local oscillator, and the gate of the transistor M2 and the gate of the transistor M3 are connected with the resistor R4 and then connected with the local oscillator The second end of the oscillator is connected to the output; the drain of transistor M1 , the drain of transistor M3 are connected to resistor R1 , the drain of transistor M2 , the drain of transistor M4 are connected to resistor R2 and used as Gilbert mixer The output terminal of the core is used to output the intermediate frequency signal; the transistor M1 is connected to the source of the transistor M2 and then connected to the drain of the transistor M5, and the transistor M3 and the source of the transistor M4 are connected to the drain of the transistor M6 connect. Transistors M 5 and M 6 form a differential common-source amplifier, which realizes the single-ended to differential conversion of radio frequency signals, improves the conversion gain, and reduces the design pressure of subsequent links. By controlling the gate voltage V b1 of the transistors M 1 and M 4 and the gate voltage V b2 of the transistors M 2 and M 3 , switching between the mixing mode and the direct mode can be flexibly realized. In this embodiment, when the voltage V b1 is equal to the voltage V b2 and both are 2.3V, the circuit is a complete Gilbert mixing unit, in the mixing mode, and the local oscillator signal is normally fed in; when the voltage V b1 is -1V , when the voltage V b2 is 2.8V, the transistors M1 and M4 are turned off, the transistors M2 and M3 are turned on, and the transistor M5 and the transistor M2 form a cascode amplifier to realize the direct mode, and there is no local oscillator at this time signal feed. Adopt active Gilbert frequency mixing structure, realize the conversion gain of 4.3 ~ 6.3dB in the mixing frequency band and the direct gain of 6.5 ~ 10dB in the direct frequency band through the differential common source amplifier.

如图5所示,中频输出级包括共漏放大器、电阻R23、四阶低通滤波器和隔直电容C15。共漏放大器实现低阻抗输出,串联电阻R23后实现中频输出电路的宽带匹配。四阶低通滤波器的截止频率为4.5GHz,用以抑制射频信号与本振信号在中频端口的泄露,提高端口隔离度。中频输出级实现单端输出,其中频带宽为0.2~4.5GHz。As shown in FIG. 5 , the intermediate frequency output stage includes a common drain amplifier, a resistor R 23 , a fourth-order low-pass filter and a DC blocking capacitor C 15 . The common-drain amplifier realizes low-impedance output, and the broadband matching of the intermediate frequency output circuit is realized after connecting resistor R 23 in series. The cut-off frequency of the fourth-order low-pass filter is 4.5GHz, which is used to suppress the leakage of RF signals and local oscillator signals at the IF port and improve port isolation. The IF output stage realizes single-ended output, and the IF bandwidth is 0.2-4.5GHz.

图6为实施例超宽带异构有源混频器的转换增益仿真结果图;图7为实施例超宽带异构有源混频器的直通增益仿真结果图;图8为实施例超宽带异构有源混频器的隔离度仿真结果图。如图6所示,本实施例超宽带异构有源混频器混频模式下,在4.5~18GHz频率范围内转换增益为4.3~6.3dB;如图7所示,直通模式下,在0.2~4.5GHz频率范围内增益为6.5~10dB,如图8所示,混频模式下,隔离度均大于32dB。可见,本实施例通过射频输入级和本振输入级宽带匹配设计,极大地扩展了吉尔伯特有源混频器的工作带宽,采用本振输入级单端转差分放大器电路设计,简化了差分信号产生电路的设计,也降低了对本振信号的功率要求;中频输出级配置有四阶低通滤波器,提高了射频到中频的隔离度和本振到中频的隔离度。Fig. 6 is the conversion gain simulation result diagram of the ultra-wideband heterogeneous active mixer of the embodiment; Fig. 7 is the through-gain simulation result diagram of the ultra-wideband heterogeneous active mixer of the embodiment; Fig. 8 is the ultra-wideband heterogeneous active mixer of the embodiment Isolation simulation result diagram of active mixer. As shown in Figure 6, in the mixing mode of the ultra-wideband heterogeneous active mixer in this embodiment, the conversion gain is 4.3-6.3dB in the frequency range of 4.5-18GHz; as shown in Figure 7, in the direct mode, at 0.2 The gain in the frequency range of ~4.5GHz is 6.5~10dB, as shown in Figure 8, in the mixing mode, the isolation is greater than 32dB. It can be seen that this embodiment greatly expands the operating bandwidth of the Gilbert active mixer through the broadband matching design of the RF input stage and the local oscillator input stage, and adopts the single-ended-to-differential amplifier circuit design of the local oscillator input stage, which simplifies the differential signal The design of the generating circuit also reduces the power requirements of the local oscillator signal; the intermediate frequency output stage is equipped with a fourth-order low-pass filter, which improves the isolation between RF and intermediate frequency and the isolation between local oscillator and intermediate frequency.

以上所述,仅为本发明的具体实施方式,本说明书中所公开的任一特征,除非特别叙述,均可被其他等效或具有类似目的的替代特征加以替换;所公开的所有特征、或所有方法或过程中的步骤,除了互相排斥的特征和/或步骤以外,均可以任何方式组合。The above is only a specific embodiment of the present invention. Any feature disclosed in this specification, unless specifically stated, can be replaced by other equivalent or alternative features with similar purposes; all the disclosed features, or All method or process steps may be combined in any way, except for mutually exclusive features and/or steps.

Claims (8)

1. The utility model provides an ultra wide band heterogeneous active mixer, includes radio frequency input stage, local oscillator input stage, gilbert's frequency mixing core and intermediate frequency output stage, its characterized in that:
the radio frequency input stage is used for receiving radio frequency signals input by the antenna port, performing impedance transformation and broadband matching on the received radio frequency signals, and transmitting the radio frequency signals to the Gilbert frequency mixing core;
the local oscillator input stage is used for receiving a single-ended local oscillator signal, amplifying and converting the received single-ended local oscillator signal into a constant amplitude reverse differential local oscillator signal, and transmitting the constant amplitude reverse differential local oscillator signal to the Gilbert frequency mixing core;
the Gilbert frequency mixing core is connected with the radio frequency input stage and the local oscillator input stage and is used for mixing a radio frequency signal provided by the radio frequency input stage and a differential local oscillator signal provided by the local oscillator input stage into an intermediate frequency signal and simultaneously realizing the switching of a frequency mixing mode and a direct mode;
the intermediate frequency output stage is connected with the Gilbert frequency mixing core and is used for carrying out impedance transformation and broadband matching on the received intermediate frequency signals and outputting the intermediate frequency signals, and simultaneously inhibiting radio frequency and local oscillator leakage.
2. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the radio frequency input stage comprises a capacitor C 10 And capacitor C 11 Transmission line TL 4 Transmission line TL 5 And transmission line TL 6 Resistance R 19 And resistance R 20 Transistor M 17 And transistor M 18
Capacitor C 10 In turn via transmission line TL 4 Transmission line TL 5 And transistor M 17 Gate of (C) is connected to 11 One end of (a) is connected with the transmission line TL 4 And transmission line TL 5 The other end of the common contact is grounded; resistor R 19 Is connected to the transmission line TL at one end 5 And transistor M 17 Between the gates of (a) and the other end via a transmission line TL 6 Connected with bias voltage V b11 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 20 Is connected with the bias voltage V b12 The other end is connected with a transistor M 18 A gate electrode of (a); transistor M 17 The drain electrode of (2) is connected with the power supply VDD, the source electrode and the transistor M 18 The drain electrode of the first transistor is connected and then used as an output end of the radio frequency input stage; transistor M 18 The source of (c) is grounded.
3. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the local oscillator input stage comprises an input common-drain amplifier, a differential common-source amplifier and an output common-drain amplifier;
the input common drain amplifier comprises a capacitor C 3 And a common drain amplifier unit II; capacitor C 3 One end of the common-drain amplifier unit is connected with the local oscillation input, and the other end of the common-drain amplifier unit is connected with the second input of the common-drain amplifier unit; the common drain amplifier unit II comprises a resistor R 8 Resistance R 9 Transmission line TL 1 Transistor M 8 And transistor M 9 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 8 And transistor M 8 The grid electrode of the common drain amplifier unit is connected with the capacitor C as two input ends of the common drain amplifier unit 3 The other end of (1) is connected with the transmission line TL 1 Connected with bias voltage V b5 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 9 Is connected with the bias voltage V b6 The other end is connected with a transistor M 9 A gate electrode of (a); transistor M 8 The drain electrode of (2) is connected with the power supply VDD, the source electrode and the transistor M 9 The drain electrodes of the first common-drain amplifier unit are connected and then serve as output ends of second common-drain amplifier units to be connected with input ends of differential common-source amplifiers; transistor M 9 The source electrode of the transistor is grounded;
the differential common source amplifier comprises a capacitor C 4 And capacitor C 5 Resistance R 10 Resistance R 11 Resistance R 12 Resistance R 13 And resistance R 14 Transistor M 10 Transistor M 11 And transistor M 12 Transmission line TL 2 And transmission line TL 3 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 4 One end of which is connected with the output of the common-drain amplifier and the other end is connected with the transistor M 10 A gate electrode of (a); capacitor C 5 One end of (a) is connected to the transistor M 11 The other end of the grid electrode is grounded; resistor R 10 Series transmission line TL 2 Transmission line TL 2 The other end is connected with a power supply VDD; resistor R 11 Series transmission line TL 3 Transmission line TL 3 The other end is connected with a power supply VDD; resistor R 12 Is connected to the capacitor C 4 And transistor M 10 Is connected with the bias voltage V at the other end b7 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 13 Is connected to the capacitor C 5 And transistor M 11 Is connected with the bias voltage V at the other end b7 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 14 One end of (a) is connected with the crystalBody tube M 12 The other end is connected with the bias voltage V b8 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M 10 Drain electrode of (C) is connected with resistor R 10 The first output end of the differential common source amplifier is connected with the source electrode of the transistor M 12 A drain electrode of (2); transistor M 11 Drain connecting resistor R 11 The second output end of the differential common source amplifier is connected with the source electrode of the transistor M 12 A drain electrode of (2); transistor M 12 The source electrode of the transistor is grounded;
the output common-drain amplifier comprises a common-drain amplifier unit III, a common-drain amplifier unit IV and a capacitor C 8 And capacitor C 9 The method comprises the steps of carrying out a first treatment on the surface of the The common drain amplifier unit three comprises a capacitor C 6 Resistance R 15 And resistance R 16 Transistor M 13 And transistor M 14 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 6 One end of the third common-drain amplifier unit is connected with the first output end of the differential common-source amplifier, and the other end is connected with the transistor M 13 A gate electrode of (a); resistor R 15 One end of (a) is connected to the transistor M 13 Gate and capacitance C of (2) 6 The other end is connected with bias voltage V b9 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 16 One end of (a) is connected to the transistor M 14 The other end is connected with the bias voltage V b10 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M 13 The drain electrode of (2) is connected with the power supply VDD, and the source electrode is connected with the transistor M 14 The drain electrode of the third common drain amplifier unit is used as the output end of the third common drain amplifier unit; transistor M 14 The source electrode of the transistor is grounded;
the common drain amplifier unit IV and the common drain amplifier unit III have the same structure, and the input end of the common drain amplifier unit IV is connected with the second output end of the differential common source amplifier;
capacitor C 8 And capacitor C 9 The capacitance is the same; one end of the capacitor is connected with the output end of the common drain amplifier unit III, and the other end of the capacitor is used as a local oscillator first output end LO_OUT+; capacitor C 9 One end is connected with the output end of the common drain amplifier unit four, and the other end is used as a local oscillator second output end LO_OUT-.
4. An ultra wideband heterogeneous active mixer according to claim 3, wherein: the differential common source amplifier has symmetrical structure and a capacitor C 4 Resistance R 12 Transistor M 10 Resistance R 10 Transmission line TL 2 And capacitor C 5 Resistance R 13 Transistor M 11 Resistance R 11 Transmission line TL 3 Corresponding device parameters are the same.
5. An ultra wideband heterogeneous active mixer according to claim 3, wherein: the amplitude of the signals output by the local oscillator first output end LO_OUT+ and the local oscillator second output end LO_OUT-are the same, and the phase difference is 180 degrees.
6. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the gilbert mixer core includes a transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 Transistor M 5 Transistor M 6 And transistor M 7 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 And resistance R 7 Capacitance C 1 And capacitor C 2
Transistor M 1 Gate of (d), transistor M 4 Gate and resistor R of (2) 3 One end of the local oscillator is connected with the first input end of the Gilbert mixer core; transistor M 2 Gate of (d), transistor M 3 Gate and resistor R of (2) 4 One end of the local oscillator is connected with the second input end of the Gilbert frequency mixing core; resistor R 3 The other end is connected with bias voltage V b1 Resistance R 4 The other end is connected with bias voltage V b2
Transistor M 1 Drain of (d), transistor M 3 Drain of (d) and resistance R 1 Is connected to one end of transistor M 2 Drain of (d), transistor M 4 Drain of (d) and resistance R 2 Is connected with one end of the mixer core and then is used as an output end of the Gilbert mixer core; resistor R 1 And resistance R 2 The other end is connected with a power supply VDD;
transistor M 1 And transistor M 2 Source is connected with transistor M 5 Drain electrode connection of transistor M 3 And transistor M 4 Source is connected with transistor M 6 Is connected with the drain electrode of the transistor;
transistor M 5 Gate connection resistor R of (2) 5 One end of (2) and a capacitor C 1 Is one end of transistor M 6 Gate connection resistor R of (2) 6 One end of (2) and a capacitor C 2 Is a member of the group; transistor M 5 And transistor M 6 Is connected with the source of the transistor M 7 Is connected with the drain electrode of the transistor; transistor M 7 Grid electrode connection resistor R 7 The source electrode is grounded;
capacitor C 1 The other end is connected with the output end of the radio frequency input stage, the resistor R 5 The other end is connected with bias voltage V b3 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 2 Is grounded at the other end of the resistor R 6 Is connected with the other end of the bias voltage V b3 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 7 Is connected with the other end of the bias voltage V b4
Bias voltage V b1 With bias voltage V b2 For switching control voltage between pass mode and mixing mode of ultra-wideband heterogeneous active mixer, transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 As a mixer switching tube, a mixing function is realized.
7. The ultra wideband heterogeneous active mixer of claim 6, wherein: gilbert mixer core structure symmetry, transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 The parameters are the same; transistor M 5 And transistor M 6 The parameters are the same; resistor R 1 And resistance R 2 The parameters are the same, resistance R 3 And resistance R 4 The parameters are the same, resistance R 5 And resistance R 6 The parameters are the same; capacitor C 1 And capacitor C 2 The parameters are the same.
8. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the intermediate frequency outputThe stage includes common drain amplifier unit five, resistor R 23 Fourth-order low-pass filter and capacitor C 15
The input end of the common drain amplifier unit five is connected with the output end of the Gilbert frequency mixing core, and the output end is connected with the resistor R 23 Is a member of the group; the common-drain amplifier unit five and the common-drain amplifier unit three have the same structure and resistance R 23 The other end of the filter is connected with the input end of the fourth-order low-pass filter; the output end of the fourth-order low-pass filter is connected with a capacitor C 15 Is a member of the group; capacitor C 15 The other end of the intermediate frequency output stage is connected with the output end of the intermediate frequency output stage;
the fourth-order low-pass filter comprises an inductance L 1 Capacitance C 13 Inductance L 2 And capacitor C 14 Inductance L 1 Is used as the input end of the fourth-order low-pass filter to be connected with the resistor R 23 The other end is connected with an inductor L 2 And a capacitor C 13 Is one end of the inductance L 2 One end of (2) and a capacitor C 14 One end of the capacitor C is connected to the output end of the fourth-order low-pass filter 13 And the other end of (C) and the capacitor C 14 The other ends of the two wires are respectively grounded.
CN202310101467.4A 2023-01-30 2023-01-30 Ultra-wideband heterogeneous active mixer Pending CN116155206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310101467.4A CN116155206A (en) 2023-01-30 2023-01-30 Ultra-wideband heterogeneous active mixer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310101467.4A CN116155206A (en) 2023-01-30 2023-01-30 Ultra-wideband heterogeneous active mixer

Publications (1)

Publication Number Publication Date
CN116155206A true CN116155206A (en) 2023-05-23

Family

ID=86373147

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310101467.4A Pending CN116155206A (en) 2023-01-30 2023-01-30 Ultra-wideband heterogeneous active mixer

Country Status (1)

Country Link
CN (1) CN116155206A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118101392A (en) * 2024-04-26 2024-05-28 成都电科星拓科技有限公司 Method for reducing backward crosstalk in communication and backward synthesis circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118101392A (en) * 2024-04-26 2024-05-28 成都电科星拓科技有限公司 Method for reducing backward crosstalk in communication and backward synthesis circuit

Similar Documents

Publication Publication Date Title
CN106849876B (en) A Low Power Wideband RF Mixer
CN104935264B (en) One kind is without inductor molded breadth band low-noise trans-conductance amplifier
CN104883135B (en) A kind of resistance feedback formula noise eliminates wideband low noise trsanscondutance amplifier
CN103516371A (en) Configurable wireless transmitter
CN101202533A (en) A low-power high-performance quadrature down-mixer
CN102946230A (en) Ultra-wide band low-noise single-ended input and differential output amplifier
CN106921346A (en) High linearity wide band upper frequency mixer
CN103684268B (en) A kind of gain controllable active orthogonal frequency mixer of low-power consumption high linearity
CN111510089A (en) Low-noise amplification module with bypass function and control method
CN103236821B (en) A kind of multimode multi-channel mixer based on adjustable negative resistance structure
CN109379049A (en) High local oscillator degree of suppression broadband mixer
CN104124923B (en) A kind of low-noise mixer circuit
CN114785286A (en) Ultra-wideband passive down-conversion mixer
CN102638227A (en) Ultra-wideband mixer circuit with on-chip active balun
US12132447B2 (en) 5G dual-band up-mixer with switching between amplification function and frequency mixing function, and terminal
CN113965167B (en) Ultra-wideband image rejection mixer suitable for 5G communication system
CN116155206A (en) Ultra-wideband heterogeneous active mixer
EP1465334A1 (en) Passive Mixer
CN109995328A (en) Frequency mixer, transmitter, chip and relevant device
CN116015332B (en) Millimeter wave dual-band image rejection receiver and receiving method
CN110120786A (en) Frequency mixer and wireless communication device
JP3853604B2 (en) Frequency conversion circuit
CN113746431B (en) Ultra-wideband high-linearity mixer with image rejection function
CN108183718B (en) A low-power wireless radio frequency front-end integrated circuit for NB_loT
CN114070203B (en) Broadband up-conversion mixer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination