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CN116111956A - Voltage controlled oscillator and frequency source - Google Patents

Voltage controlled oscillator and frequency source Download PDF

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Publication number
CN116111956A
CN116111956A CN202310107662.8A CN202310107662A CN116111956A CN 116111956 A CN116111956 A CN 116111956A CN 202310107662 A CN202310107662 A CN 202310107662A CN 116111956 A CN116111956 A CN 116111956A
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China
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transistor
controlled oscillator
voltage
electrically connected
symmetrically arranged
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Chinese (zh)
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请求不公布姓名
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Xinlingtong Tianjin Technology Co ltd
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Xinlingtong Tianjin Technology Co ltd
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Priority to CN202310107662.8A priority Critical patent/CN116111956A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

The invention discloses a voltage controlled oscillator and a frequency source. The voltage-controlled oscillator comprises a cross coupling structure, a driving buffer structure and a feedback loop LC resonance network; the cross coupling structure comprises two first transistors which are symmetrically arranged and are in cross coupling connection; the driving buffer structure comprises two second transistors which are symmetrically arranged, and the two second transistors output radio frequency signals with opposite phases; the feedback loop LC resonant network comprises a first LC resonant network and/or a second LC resonant network; the first LC resonance network is electrically connected between the source electrode of the second transistor and the drain electrode of the first transistor and used for expanding third harmonic waves; the second LC resonance network is electrically connected between the grid electrode and the drain electrode of the first transistor and used for improving the voltage gain of the first transistor. Compared with the prior art, the embodiment of the invention effectively reduces the phase noise and simultaneously reduces the power consumption.

Description

Voltage controlled oscillator and frequency source
Technical Field
The present invention relates to the field of integrated circuits, and in particular, to a voltage controlled oscillator and a frequency source.
Background
The frequency source is a heart component of a wireless subsystem such as communication and radar, and has a very important function. Voltage Controlled Oscillators (VCO) are vital components in the frequency source, whose performance will directly affect the overall performance of the system.
In the prior art, the types of voltage controlled oscillators include Class-B VCOs, class-C VCOs, and Class-F 23 VCO, etc. These voltage controlled oscillators may be either single core VCO structures or multi-core VCO structures. Traditional Clas the frequency increases, the phase noise gradually worsens, and it is difficult to meet the requirements of ass-B VCOs and Class-C VCOs. In order to optimize phase noise, the prior art adopts a third harmonic control technology to shape an output waveform aiming at a single-core VCO structure so that the noise of a circuit is not affected by voltage phase, thereby avoiding the deterioration of the phase noise. On the other hand, by using Class-F 23 The structure utilizes the coupling among the drain source, the drain gate and the source gate to form high resistance at the secondary and third harmonic frequencies so as to optimize phase noise.
However, this type of technique has a common disadvantage in that the harmonic impedance peaks need to be adjusted by additional switched capacitors when a wideband VCO design is being implemented. The switch capacitor is formed by an MOS tube, and the on-resistance of the MOS tube is very huge compared with the passive loss resistance of the voltage-controlled oscillator. Therefore, the circuit in the prior art has larger power consumption, so that the quality factor of the resonator is inevitably reduced, and the optimization of phase noise and low power consumption cannot be achieved.
Disclosure of Invention
The embodiment of the invention provides a voltage-controlled oscillator and a frequency source, which are used for reducing power consumption while optimizing phase noise.
In a first aspect, an embodiment of the present invention provides a voltage-controlled oscillator, including:
the cross coupling structure comprises two first transistors which are symmetrically arranged and are in cross coupling connection;
the driving buffer structure comprises two second transistors which are symmetrically arranged, and the two second transistors output radio frequency signals with opposite phases;
a feedback loop LC resonant network comprising a first LC resonant network and/or a second LC resonant network; the first LC resonance network is electrically connected between the source electrode of the second transistor and the drain electrode of the first transistor and used for expanding third harmonic waves; the second LC resonance network is electrically connected between the grid electrode and the drain electrode of the first transistor and used for improving the voltage gain of the first transistor.
Optionally, the first LC resonant network includes: the device comprises two first inductors, two second inductors, two first capacitors and two second capacitors, wherein the two first inductors are symmetrically arranged, the two second inductors are symmetrically arranged, the two first capacitors are symmetrically arranged, and the two second capacitors are symmetrically arranged;
electromagnetic coupling exists between the first inductor and the second inductor to form a transformer; the first inductor is electrically connected with the source electrode of the second transistor, and the first end of the second inductor is electrically connected with the drain electrode of the first transistor;
the first inductor and the first capacitor form an LC resonance network, and the second inductor and the second capacitor form a resonance network.
Optionally, the connection nodes of the two first inductors are grounded;
the connecting nodes of the two second inductors are connected with power supply voltage;
the connection nodes of the two second capacitors are grounded.
Further, adjusting the values of the first inductance and the second inductance is at the third harmonic.
Optionally, the second LC resonant network includes: two third inductors and two third capacitors which are symmetrically arranged;
the third inductor and the third capacitor are connected in series between the drain electrode and the gate electrode of the first transistor.
Optionally, the cross-coupling structure further comprises: two fourth capacitors symmetrically arranged;
the first end of the fourth capacitor is electrically connected to the connection node of the third inductor and the third capacitor, and the second end of the fourth capacitor is electrically connected to the grid electrode of the opposite first transistor.
Optionally, the voltage controlled oscillator further includes: the grid LC resonance network comprises two bias voltage output ends which are symmetrically arranged; the gate of the first transistor and the gate of the second transistor are both electrically connected to the bias voltage output terminal.
Optionally, the gate LC resonant network includes: two variable capacitors, a multi-bit switch capacitor and two fourth inductors which are symmetrically arranged;
the variable capacitor is electrically connected to the bias voltage output end, the fourth inductor is electrically connected to the bias voltage output end, and the multi-bit switch capacitor is electrically connected between the two bias voltage output ends.
Optionally, the connection nodes of the two variable capacitors are connected with a first bias voltage;
the connection nodes of the two fourth inductors are connected with the second bias voltage.
Optionally, the driving buffer structure further includes: two fifth inductors and two fifth capacitors are symmetrically arranged;
the first end of the fifth capacitor is electrically connected with the drain electrode of the second transistor; the second ends of the two fifth inductors are connected with power supply voltage; the second ends of the two fifth capacitors are respectively used as radio frequency signal output ends of the voltage-controlled oscillator.
In a second aspect, an embodiment of the present invention further provides a frequency source, including: the voltage controlled oscillator of any embodiment of the present invention.
According to the technical scheme, based on the concept of harmonic control, a feedback loop LC resonance network is additionally arranged in a voltage-controlled oscillator, and specifically comprises a first LC resonance network and/or a second LC resonance network; the first LC resonance network is electrically connected between the source electrode of the second transistor and the drain electrode of the first transistor and used for expanding third harmonic waves; the second LC resonance network is electrically connected between the grid electrode and the drain electrode of the first transistor and used for improving the voltage gain of the first transistor. The first LC resonance network provided by the embodiment of the invention can effectively expand the impedance peak value at the third harmonic, does not need to set a switch capacitor to control the third harmonic, and is beneficial to reducing the circuit power consumption. The second LC resonance network provides a voltage gain between the grid electrode and the drain electrode of the first transistor, and the voltage swing of the grid electrode of the first transistor is improved, so that the noise factor of the active MOS transistor is restrained, the phase noise is reduced, and meanwhile, the power consumption of the circuit is reduced.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic circuit diagram of a voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 2 is a schematic circuit diagram of another voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 3 is a schematic circuit diagram of another voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 4 is a schematic circuit diagram of another voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 5 is a schematic circuit diagram of a voltage-controlled oscillator according to another embodiment of the present invention.
Fig. 6 is a schematic circuit diagram of a voltage-controlled oscillator according to another embodiment of the present invention.
Fig. 7 is an impedance waveform diagram of a voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 8 is an equivalent differential mode schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 9 is an equivalent common mode schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 10 is a differential mode and common mode impedance diagram of a voltage controlled oscillator according to an embodiment of the present invention.
Fig. 11 is a voltage waveform diagram of the drain and gate of the first transistor.
Fig. 12 is a simulation waveform diagram of a voltage-controlled oscillator according to an embodiment of the present invention.
Fig. 13 is a waveform diagram of a frequency tuning range for voltage controlled oscillator testing according to an embodiment of the present invention.
Fig. 14 is a waveform diagram of phase noise at 100kHz and 1MHz of a voltage controlled oscillator according to an embodiment of the present invention.
Fig. 15 is a figure of merit FOMT diagram of a voltage-controlled oscillator according to an embodiment of the present invention.
FIG. 16 is a schematic diagram showing a voltage-controlled oscillator 1/f according to an embodiment of the present invention 3 The fluctuation of the noise angle is schematically shown.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic circuit diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 1, a voltage-controlled oscillator provided in an embodiment of the present invention specifically includes:
the cross-coupling structure 110 includes two first transistors M symmetrically arranged 1 Two first transistors M 1 Cross-coupling connections;
the driving buffer structure 120 comprises two second transistors M symmetrically arranged 2 Two second transistors M 2 Output phaseAn inverse radio frequency signal; the radio frequency signals RFOUTA and RFOUTB are respectively;
a feedback loop LC resonant network 130 comprising a first LC resonant network 131 and/or a second LC resonant network 132; wherein the first LC resonance network 131 is electrically connected to the second transistor M 2 Source of (c) and first transistor M 1 For expanding third harmonics; the second LC resonant network 132 is electrically connected to the first transistor M 1 For boosting the first transistor M 1 Is provided.
The cross-coupling structure 110 is used to form an oscillating loop, and provides negative resistance to the feedback loop LC resonant network 130. First transistor M 1 There is a parasitic capacitance between the drain and gate of (a), which can be considered as part of the second LC resonant network 132. The second LC resonant network 132 can be implemented in the first transistor M 1 Providing a voltage gain between the gate and the drain of the first transistor M capable of reducing 1 Is a power consumption of the battery. And, the arrangement of the second LC resonant network 132 can improve the first transistor M 1 The voltage waveform at the gate, thereby boosting the first transistor M 1 The voltage swing of the grid electrode suppresses the noise factor of the active MOS transistor. Accordingly, the arrangement of the second LC resonant network 132 can reduce power consumption while reducing phase noise.
The driving buffer structure 120 is used for outputting radio frequency signals. Unlike the prior art, the second transistor M in the buffer structure 120 is driven 2 The source of (a) is not directly grounded, and the embodiment of the invention is shown in the second transistor M 2 Source of (c) and first transistor M 1 A first LC resonant network 131 is arranged between the drains of (a). I.e. the second transistor M 2 Is fed back to the first transistor M through the first LC resonance network 131 1 Is formed on the drain electrode of the transistor. By adjusting the parameters in the first LC tank 131, the third harmonic impedance peak in the feedback loop LC tank 130 can be effectively extended. Therefore, compared with the prior art, the embodiment of the invention does not need to arrange a switch capacitor to form third harmonic wave, which is beneficial to reducing the power consumption of the circuit. Specifically, the first LC resonant network 131 is arranged such that the voltage controlled oscillatorThe impedance value of the third harmonic can be at the optimal impedance point when the lowest frequency and the highest frequency are changed, thereby enabling the first transistor M 1 Has an extremely strong third harmonic component. Therefore, the first transistor M 1 A voltage waveform similar to square wave obtained by the drain electrode, a first transistor M according to the pulse sensitive function theory 1 Flicker noise of the (c) is effectively suppressed, and up-conversion of 1/f noise is avoided, thereby optimizing phase noise. Accordingly, the arrangement of the first LC resonant network 131 can reduce power consumption while reducing phase noise.
In summary, the embodiments of the present invention are based on the concept of harmonic control, and by providing the first LC resonant network 131 and/or the second LC resonant network 132 in the voltage-controlled oscillator, the power consumption can be reduced while reducing the phase noise.
It should be noted that, in fig. 1, the voltage-controlled oscillator is exemplarily shown to include both the first LC resonant network 131 and the second LC resonant network 132, which is not a limitation of the present invention, and in other embodiments, only the first LC resonant network 131 may be provided, or only the second LC resonant network 132 may be provided.
In the above embodiments, the first LC resonant network 131 and the second LC resonant network 132 are arranged in various ways, and several of them are described below, but the present invention is not limited thereto.
Fig. 2 is a schematic circuit diagram of another voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 2, the first LC resonant network 131 is further refined on the basis of the above embodiments. In one embodiment of the present invention, the first LC resonant network 131 optionally includes: two first inductors L symmetrically arranged 1 Two second inductors L symmetrically arranged 2 Two first capacitors C symmetrically arranged 1 And two second capacitors C symmetrically arranged 2 。
Wherein the first inductance L 1 And a second inductance L 2 Electromagnetic coupling exists between the two components to form a transformer, and the coupling coefficient of the transformer is k; first inductance L 1 And a second transistor M 2 Is electrically connected with the source electrode of the second inductor L 2 And a first transistor M 1 Is electrically connected to the drain electrode of the transistor. First inductance L 1 And a first capacitor C 1 Form LC resonant network, second inductance L 2 And a second capacitor C 2 Forming a resonant network.
Optionally, two first inductances L 1 Is grounded; two second inductances L 2 The connection node of (2) is connected with the power supply voltage V DD The method comprises the steps of carrying out a first treatment on the surface of the Two second capacitors C 2 Is grounded.
The embodiment of the invention adjusts the first inductance L 1 And a second inductance L 2 The value of (2) is at the third harmonic, so that the third harmonic impedance peak in the feedback loop LC resonant network 130 can be effectively expanded, and a switch capacitor is not required to be arranged to form the third harmonic, thereby being beneficial to reducing the circuit power consumption.
With continued reference to fig. 2, a specific connection structure of the first LC resonant network 131 will be described with reference to a connection relationship of a circuit at the left part of the voltage-controlled oscillator, and the second capacitor C 2 And a first transistor M 1 A second capacitor C electrically connected to the drain electrode of (C) 2 Is grounded; first inductance L 1 And a first end of the second transistor M 2 Is electrically connected with the source electrode of the first inductor L 1 Is grounded; second inductance L 2 And a first transistor M 1 Is electrically connected with the drain electrode of the second inductor L 2 Is connected with the second end of the power supply voltage V DD 。
Wherein the first inductance L 1 And a first capacitor C 1 Form a first-order coupling, a second inductance L 2 And a second capacitor C 2 The first-order coupling is formed, the left part and the right part are symmetrical structures, and the four-order coupling is formed. First inductance L 1 And a second inductance L 2 Respectively loaded on the first transistor M 1 And a second transistor M 2 And coupled by a coupling coefficient k, the resonance impedance peak at which can be made to be at the third harmonic of the desired frequency by adjusting the inductance parameter. And, the arrangement of the fourth-order coupling can effectively expand the impedance peak value at the third harmonic, even in the process of frequency variation, the impedance peak value can be reduced in the first transistor M 1 The drain electrode of the transformer is provided with rich third harmonic output, and the CLASS-F waveform output is realized.
Fig. 3 is a schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 3, the second LC resonant network 132 is further refined on the basis of the above embodiments. In one embodiment of the present invention, the optional second LC resonant network 132 includes: two third inductors L symmetrically arranged 3 And two third capacitors C symmetrically arranged 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the third inductance L 3 And a third capacitor C 3 In series with the first transistor M 1 Between the drain and the gate of (c).
Optionally, the connection relationship of the devices in the second LC resonant network 132 is: taking the connection relation of the circuit at the left part of the voltage-controlled oscillator as an example, the third inductor L 3 And a first transistor M 1 Is electrically connected with the drain electrode of the third inductor L 3 And a third capacitor C 3 A third capacitor C electrically connected to the first end of 3 And the second end of the first transistor M 1 Is electrically connected to the gate of (c).
Wherein the third inductance L 3 First transistor M 1 Parasitic capacitance of (C) and third capacitance C 3 Forming a resonant network to form a first transistor M 1 To obtain a larger voltage gain Av to boost the first transistor M 1 Voltage swing of gate, suppress the first transistor M 1 Reducing phase noise. Third capacitor C 3 Is to at the first transistor M 1 The gate and drain of (a) act as capacitive coupling to compensate for the extra negative phase shift brought about by the two pairs of poles in the tank impedance function, while providing a feedback loop for the oscillation.
With continued reference to fig. 3, in addition to the above embodiments, optionally, the cross-coupling structure 110 further includes: two fourth capacitors C symmetrically arranged 4 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the fourth capacitor C 4 Is electrically connected to the third inductor L 3 And a third capacitor C 3 A fourth capacitor C 4 Is electrically connected to the second end of (a)First transistor M on opposite side 1 Is formed on the substrate.
Wherein, two first transistors M 1 One of which is a reference, the other is a first transistor M on the opposite side 1 . Fourth capacitor C 4 First transistor M to be located at left part 1 Is coupled to the gate of the first transistor M located on the right (opposite side) 1 A drain electrode of (2); another fourth capacitor C 4 The first transistor M to be located at the right part 1 Is coupled to the gate of the first transistor M located at the left (opposite side) 1 Thereby forming a cross-coupled structure. It can be seen that the third inductance L 3 Equivalent to the additional inductance inserted in the cross-coupling structure 110.
Fig. 4 is a schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 4, in addition to the above embodiments, optionally, the voltage-controlled oscillator further includes: a gate LC resonant network 140. The grid LC resonant network 140 includes two bias voltage output terminals symmetrically arranged; first transistor M 1 Gate of (c) and second transistor M 2 The gates of which are electrically connected to the bias voltage output terminal. Specifically, the first transistor M located at the left part 1 And a second transistor M positioned at the left part 2 The gates of (a) are all electrically connected to the bias voltage output terminal of the left part of the gate LC resonant network 140; first transistor M located at right part 1 And a second transistor M located at the right part 2 Is electrically connected to the bias voltage output terminal of the right part of the gate LC tank 140. The driving buffer structure 120 and the cross-coupling structure 110 share the gate LC resonant network 140, reducing the number of power supplies, and facilitating simplification of the circuit structure.
With continued reference to fig. 4, the optional gate LC resonant network 140 includes: two variable capacitors Mv and a multi-bit switch capacitor C which are symmetrically arranged 6 And two fourth inductors L symmetrically arranged 4 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the variable capacitor Mv is electrically connected to the bias voltage output terminal, and the fourth inductor L 4 A multi-bit switch capacitor C electrically connected to the bias voltage output terminal 6 Is electrically connected between the two bias voltage output terminals. Optionally, the connection node of the two variable capacitors Mv is connected with the firstA bias voltage V T The method comprises the steps of carrying out a first treatment on the surface of the Two fourth inductances L 4 The connection node of (2) is connected with the second bias voltage V G 。
Specifically, the connection relationship of each device in the gate LC resonant network 140 is: taking the connection relation of the circuit at the left part of the voltage-controlled oscillator as an example, the first end of the variable capacitor Mv is connected with the first transistor M 1 The second end of the variable capacitor Mv is electrically connected with the first bias voltage V T The method comprises the steps of carrying out a first treatment on the surface of the Fourth inductance L 4 And a first transistor M 1 Gate electrical connection of fourth inductance L 4 Second end connected to second bias voltage V g . Variable capacitance Mv and multi-bit switched capacitance C 6 Is commonly connected to a fourth inductor L 4 Two ends.
The variable capacitor Mv is formed by an MOS tube and is used for controlling the fine tuning variable capacitor. Multi-bit switched capacitor C 6 For example, a 4bits switched capacitor, is used to achieve coarse tuning and thereby control the output frequency of the voltage controlled oscillator.
Fig. 5 is a schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 5, the driving buffer structure 120 is further refined on the basis of the above embodiments. Optionally, the driving buffer structure 120 further includes: two fifth inductances L symmetrically arranged 5 And two symmetrically arranged fifth capacitors C 5 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the fifth inductance L 5 And a first end of the second transistor M 2 A fifth capacitor C electrically connected to the drain electrode of (C) 5 And a first end of the second transistor M 2 Is electrically connected to the drain electrode of the transistor; two fifth inductances L 5 Is connected with the second end of the power supply voltage V DD The method comprises the steps of carrying out a first treatment on the surface of the Two fifth capacitors C 5 The second terminals of the voltage-controlled oscillator are respectively used as the radio frequency signal output terminals RFOUTA and RFOUTB of the voltage-controlled oscillator.
Specifically, the connection relationship of the driving buffer structure 120 is: taking the connection relation of the circuit at the left part of the voltage-controlled oscillator as an example, a fifth inductor L 5 And a first end of the second transistor M 2 A fifth capacitor C electrically connected to the drain electrode of (C) 5 And a first end of the second transistor M 2 Is electrically connected to the drain electrode of the transistor; fifth inductance L 5 Is connected with the second end of the power supply voltage V DD The method comprises the steps of carrying out a first treatment on the surface of the Fifth capacitor C 5 Is used as the radio frequency signal output terminal RFOUTA of the voltage controlled oscillator.
Fig. 6 is a schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 5, a specific voltage controlled oscillator structure is provided on the basis of the above embodiments. The structure is Class-F 23 A structure in which two symmetrically arranged first transistors M 1 Through a fourth capacitor C 4 And the two circuits are electrically connected to form a cross-coupling structure for forming an oscillation loop and providing negative resistance for the feedback loop LC resonance network. Third inductance L 3 First transistor M 1 Forms a resonant network with the third capacitor C3 and is inserted into the first transistor M 1 In the feedback loop between the drain and the gate of the first transistor M1, so as to obtain a larger voltage gain Av, thereby improving the voltage swing of the gate of the first transistor M1, and effectively suppressing the noise factor of the first transistor M1, thereby reducing the phase noise. First transistor M 1 Drain electrode of (d) and first inductance L 1 Second inductance L 2 First capacitor C 1 And a second capacitor C 2 The first LC resonant network is electrically connected and parameters of the LC resonant network are adjusted so that resonance is at the third harmonic of the desired frequency. Second transistor M 2 Gate of (c) and first transistor M 1 The gates of (2) are directly connected and share the same bias voltage to simplify the circuit structure. Second transistor M 2 The source electrode of (2) is changed into a traditional direct grounding mode through a fifth inductor L 5 Feedback to the first transistor M 1 Drain electrode second inductance L of (2) 2 Where it is located. This effectively expands the first transistor M 1 The third harmonic impedance peak of the drain electrode of the first transistor M is the first LC resonant network, so that the impedance value of the third harmonic can be at the optimal impedance point when the voltage-controlled oscillator is changed between the lowest frequency and the highest frequency 1 Has an extremely strong third harmonic component, resulting in a square wave-like voltage waveform at the first transistor drain. According to the theory of the pulse sensitivity function, the first transistor M for realizing cross coupling in the embodiment of the invention 1 Flicker noise of the (c) is effectively suppressed, and up-conversion of 1/f noise is avoided, thereby optimizing phase noise. The voltage-controlled oscillator provided by the embodiment of the invention is favorable for relieving broadband 1/f when the wide tuning range reaches 30 percent 3 The PN angle fluctuates sharply.
Therefore, the voltage-controlled oscillator provided by the embodiment of the invention can realize calibration without additional switch capacitance and wide harmonic plasticity, and therefore, the voltage-controlled oscillator can be called as Class-F without calibration wide harmonic shaping 23 A voltage controlled oscillator.
Further analysis and simulation verification of the voltage controlled oscillator shown in fig. 6 is performed below.
Fig. 7 is an impedance waveform diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 7, with the fundamental wave omega 0 Impedance value |Z of (1) tank Compared with the waveform, the second harmonic 2ω 0 The impedance value waveform of (2) shows the characteristics of high and narrow, and the third harmonic is 3 omega 0 The impedance value waveform of (a) exhibits characteristics of high and wide. And third harmonic 3 omega 0 The impedance value waveform of (a) resembles a square wave.
FIG. 8 is an equivalent differential mode schematic diagram of a voltage controlled oscillator according to an embodiment of the present invention; fig. 9 is an equivalent common mode schematic diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 8 and 9, Z is used for equivalent differential mode impedance in，DMS Indicating the equivalent common mode impedance Z in，CMS Is expressed as V D Representing a first transistor M 1 Drain voltage of V G Representing a first transistor M 1 Is set to the gate voltage of (a). Equivalent capacitance C 3P Represents a third capacitance C 3 And a first transistor M 1 Series connection of parasitic capacitance, equivalent capacitance C V Representing multi-bit switched capacitor C 6 And a variable capacitance Mv. Loaded on the first transistor M 1 The transformer coupling on the drain electrode node is equivalent to a single LC tank and is equivalent to an equivalent capacitor C 1P (including a first transistor M 1 Parasitic capacitance and second capacitance C 2 ) Resonance. In addition, a multi-bit switched capacitor C 6 Varying from 117fF to 498fF, the frequency is controlled primarily by a single LC tank, thereby avoiding multimode appearing on the transformer couplingResonance.
Fig. 10 is a differential mode and common mode impedance diagram of a voltage controlled oscillator according to an embodiment of the present invention; fig. 11 is a voltage waveform diagram of the drain and gate of the first transistor. As shown in fig. 10 and 11, Z is used for equivalent differential mode impedance in，DMS Is expressed as a fundamental wave f 0 And third harmonic 3f 0 Z for equivalent common mode impedance in，CMS Expressed as second harmonic 2f 0 Voltage V D+ Is a first transistor M 1 Drain voltage of (V) D- For another first transistor M 1 Drain voltage of (V) G+ Is a first transistor M 1 Gate voltage of (V) G- For another first transistor M 1 Is set to the gate voltage of (a).
The embodiment of the invention uses two first inductors L 1 And a second inductance L 2 With a weak coupling coefficient of 0.52 at the third harmonic to balance the width and peak of the third harmonic impedance peak. A first transistor M providing a voltage gain Av via a second LC resonant network configuration 1 The gate of (c) exhibits a larger voltage swing, thereby reducing the effective noise factor of the active device. The voltage gain Av simulated in the embodiment of the invention is approximately equal to 1.6, thus realizing the first transistor M 1 The large voltage swing on the gate of (c) so that the output buffer can be driven directly, reducing power consumption.
Fig. 12 is a simulation waveform diagram of a voltage-controlled oscillator according to an embodiment of the present invention. As shown in fig. 12, the simulation uses a periodic transfer function (periodic transfer function, PXF) simulation. The simulation non-normalized pulse sensitivity function ISF, the noise adjustment function NMF and the effective pulse sensitivity function ISFeff are obtained through simulation. The effective pulse sensitivity function ISFeff of the voltage-controlled oscillator 1/f area is the product of the noise adjustment function NMF and the non-normalized pulse sensitivity function ISF. The effective pulse sensitivity function ISFeff is centrosymmetric, and the good symmetry integral is approximately 0, which shows a lower direct current value component, so that the embodiment of the invention can obviously inhibit single-sideband flicker noise introduced by an active device.
FIG. 13 is a schematic illustration of an embodiment of the present inventionThe frequency tuning range waveform diagram for voltage-controlled oscillator test is provided in the example; FIG. 14 is a diagram showing waveforms of phase noise at 100kHz and 1MHz of a voltage controlled oscillator according to an embodiment of the present invention; fig. 15 is a figure of merit FOMT diagram of a voltage-controlled oscillator according to an embodiment of the present invention; FIG. 16 is a schematic diagram showing a voltage-controlled oscillator 1/f according to an embodiment of the present invention 3 The fluctuation of the noise angle is schematically shown. As shown in fig. 13 to 16, a multi-bit switch capacitor C 6 For example, a 4bits switched capacitor, output 2 4 A bar frequency waveform. The embodiment of the invention adopts a plurality of LC resonant networks, so that broadband harmonic shaping is realized. In particular, the embodiment of the invention obtains 1/f in a wide tuning range of 10.65-14.37 GHz (29.74 percent) 3 Small fluctuations in the PN angle (380.+ -.100 kHz). Variation of measured PN and figure of merit FOMT over an adjustable range at 1MHz frequency offset<2dB, while the measured KVCO is between 96.2MHz/V and 244MHz/V with a band overlap of more than 35%. Wherein, 100kHZ is closer to the central frequency point, and the fluctuation is larger, but is within the normal range.
In summary, embodiments of the present invention provide a Class-F without calibration wide harmonic shaping 23 A voltage controlled oscillator capable of achieving a tuning range of 12-15GHz, applicable to 5G communication systems.
The embodiment of the invention also provides a frequency source, which comprises the voltage-controlled oscillator provided by any embodiment of the invention, and the technical principle and the generated effect are similar and are not repeated.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.

Claims (11)

1. A voltage controlled oscillator, comprising:
the cross coupling structure comprises two first transistors which are symmetrically arranged, and the two first transistors are connected in a cross coupling way;
the driving buffer structure comprises two second transistors which are symmetrically arranged, and the two second transistors output radio frequency signals with opposite phases;
a feedback loop LC resonant network comprising a first LC resonant network and/or a second LC resonant network; wherein the first LC resonant network is electrically connected between the source of the second transistor and the drain of the first transistor for expanding third harmonics; the second LC resonance network is electrically connected between the grid electrode and the drain electrode of the first transistor and used for improving the voltage gain of the first transistor.
2. The voltage controlled oscillator of claim 1, wherein the first LC tank network comprises: the device comprises two first inductors, two second inductors, two first capacitors and two second capacitors, wherein the two first inductors are symmetrically arranged, the two second inductors are symmetrically arranged, the two first capacitors are symmetrically arranged, and the two second capacitors are symmetrically arranged;
electromagnetic coupling exists between the first inductor and the second inductor to form a transformer; the first inductor is electrically connected with the source electrode of the second transistor, and the first end of the second inductor is electrically connected with the drain electrode of the first transistor;
the first inductor and the first capacitor form an LC resonance network, and the second inductor and the second capacitor form a resonance network.
3. The voltage controlled oscillator of claim 2, wherein the connection nodes of the two first inductors are grounded;
the connecting nodes of the two second inductors are connected with a power supply voltage;
and the connection nodes of the two second capacitors are grounded.
4. The voltage controlled oscillator of claim 2, wherein the values of the first inductance and the second inductance are adjusted at a third harmonic.
5. The voltage controlled oscillator of claim 1, wherein the second LC tank network comprises: two third inductors and two third capacitors which are symmetrically arranged;
wherein the third inductor and the third capacitor are connected in series between the drain and the gate of the first transistor.
6. The voltage controlled oscillator of claim 5, wherein the cross-coupling structure further comprises: two fourth capacitors symmetrically arranged;
the first end of the fourth capacitor is electrically connected to the connection node of the third inductor and the third capacitor, and the second end of the fourth capacitor is electrically connected to the grid electrode of the first transistor on the opposite side.
7. The voltage controlled oscillator of claim 1, further comprising:
the grid LC resonance network comprises two bias voltage output ends which are symmetrically arranged; the gate of the first transistor and the gate of the second transistor are both electrically connected to the bias voltage output terminal.
8. The voltage controlled oscillator of claim 7, wherein the gate LC tank network comprises: two variable capacitors, a multi-bit switch capacitor and two fourth inductors which are symmetrically arranged;
the variable capacitor is electrically connected to the bias voltage output end, the fourth inductor is electrically connected to the bias voltage output end, and the multi-bit switch capacitor is electrically connected between the two bias voltage output ends.
9. The voltage controlled oscillator of claim 8, wherein the connection nodes of the two variable capacitors are connected to a first bias voltage;
and the connection nodes of the two fourth inductors are connected with a second bias voltage.
10. The voltage controlled oscillator of claim 1, wherein the drive buffer structure further comprises: two fifth inductors and two fifth capacitors are symmetrically arranged;
the first end of the fifth capacitor is electrically connected with the drain electrode of the second transistor; the second ends of the two fifth inductors are connected with a power supply voltage; the second ends of the two fifth capacitors are respectively used as radio frequency signal output ends of the voltage-controlled oscillator.
11. A frequency source, comprising: the voltage controlled oscillator of any of claims 1-10.
CN202310107662.8A 2023-02-10 2023-02-10 Voltage controlled oscillator and frequency source Pending CN116111956A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117240220A (en) * 2023-11-13 2023-12-15 成都明夷电子科技有限公司 Radio frequency voltage controlled oscillator and electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117240220A (en) * 2023-11-13 2023-12-15 成都明夷电子科技有限公司 Radio frequency voltage controlled oscillator and electronic equipment

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