CN116064189B - Diamond cutting fluid for silicon carbide wafer and preparation method thereof - Google Patents
Diamond cutting fluid for silicon carbide wafer and preparation method thereof Download PDFInfo
- Publication number
- CN116064189B CN116064189B CN202211594625.6A CN202211594625A CN116064189B CN 116064189 B CN116064189 B CN 116064189B CN 202211594625 A CN202211594625 A CN 202211594625A CN 116064189 B CN116064189 B CN 116064189B
- Authority
- CN
- China
- Prior art keywords
- diamond
- cutting fluid
- silicon carbide
- oil
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 79
- 239000010432 diamond Substances 0.000 title claims abstract description 79
- 239000002173 cutting fluid Substances 0.000 title claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims abstract description 24
- CEGOLXSVJUTHNZ-UHFFFAOYSA-K aluminium tristearate Chemical compound [Al+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CEGOLXSVJUTHNZ-UHFFFAOYSA-K 0.000 claims abstract description 19
- 229940063655 aluminum stearate Drugs 0.000 claims abstract description 19
- 239000003921 oil Substances 0.000 claims abstract description 19
- 235000019198 oils Nutrition 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- 235000015112 vegetable and seed oil Nutrition 0.000 claims abstract description 13
- 239000008158 vegetable oil Substances 0.000 claims abstract description 13
- 230000003712 anti-aging effect Effects 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 239000002270 dispersing agent Substances 0.000 claims abstract description 9
- 239000002199 base oil Substances 0.000 claims abstract description 8
- 239000004094 surface-active agent Substances 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 47
- 238000003756 stirring Methods 0.000 claims description 25
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- 230000001804 emulsifying effect Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005303 weighing Methods 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- -1 polyoxyethylene Polymers 0.000 claims description 7
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 239000003549 soybean oil Substances 0.000 claims description 5
- 235000012424 soybean oil Nutrition 0.000 claims description 5
- 235000017060 Arachis glabrata Nutrition 0.000 claims description 4
- 244000105624 Arachis hypogaea Species 0.000 claims description 4
- 235000010777 Arachis hypogaea Nutrition 0.000 claims description 4
- 235000018262 Arachis monticola Nutrition 0.000 claims description 4
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 4
- 235000020232 peanut Nutrition 0.000 claims description 4
- 238000010008 shearing Methods 0.000 claims description 4
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 claims description 3
- 229940055577 oleyl alcohol Drugs 0.000 claims description 3
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 claims description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 2
- 240000002791 Brassica napus Species 0.000 claims description 2
- 235000004977 Brassica sinapistrum Nutrition 0.000 claims description 2
- 238000005054 agglomeration Methods 0.000 claims description 2
- 230000002776 aggregation Effects 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 150000001924 cycloalkanes Chemical class 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 239000003760 tallow Substances 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 claims description 2
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 2
- 239000000725 suspension Substances 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012827 research and development Methods 0.000 abstract description 4
- 230000003670 easy-to-clean Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 30
- 238000005520 cutting process Methods 0.000 description 28
- 239000007788 liquid Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000003082 abrasive agent Substances 0.000 description 5
- 239000003027 oil sand Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 241000252229 Carassius auratus Species 0.000 description 2
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical class O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000375 suspending agent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical group CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M169/00—Lubricating compositions characterised by containing as components a mixture of at least two types of ingredient selected from base-materials, thickeners or additives, covered by the preceding groups, each of these compounds being essential
- C10M169/04—Mixtures of base-materials and additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N11/00—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N11/00—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
- G01N11/10—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties by moving a body within the material
- G01N11/14—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties by moving a body within the material by using rotary bodies, e.g. vane
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/04—Elements
- C10M2201/041—Carbon; Graphite; Carbon black
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2203/00—Organic non-macromolecular hydrocarbon compounds and hydrocarbon fractions as ingredients in lubricant compositions
- C10M2203/02—Well-defined aliphatic compounds
- C10M2203/0206—Well-defined aliphatic compounds used as base material
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/10—Carboxylix acids; Neutral salts thereof
- C10M2207/12—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
- C10M2207/126—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids monocarboxylic
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2010/00—Metal present as such or in compounds
- C10N2010/06—Groups 3 or 13
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/02—Pour-point; Viscosity index
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/04—Detergent property or dispersant property
Landscapes
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Lubricants (AREA)
Abstract
The invention discloses a diamond cutting fluid for a silicon carbide wafer and a preparation method thereof, wherein the diamond cutting fluid comprises the following raw materials in percentage by weight: 8-20% of diamond powder, 0.5-2.5% of dispersing agent, 2-6% of surfactant, 10-40% of thixotrope solution and 31.5-79.5% of base oil; wherein, the thixotrope solution comprises the following raw materials: 85-97% of vegetable oil, 2-10% of aluminum stearate and 1-5% of oil anti-aging agent T501. The diamond cutting fluid is efficient and easy to clean, has a simple production mode and is easy to produce in mass; in addition, the method for detecting the yield value of the diamond cutting fluid can shorten the judging time of the suspension stability in the formula research and development process.
Description
Technical Field
The invention relates to the technical field of silicon carbide cutting auxiliary materials, in particular to diamond cutting fluid for silicon carbide wafers and a preparation method thereof.
Background
Silicon carbide single crystal materials are representative of third-generation semiconductor materials, and have wide application fields and wide application prospects by virtue of excellent properties. Depending on the use of the device, a silicon carbide single crystal polished wafer is required to have high surface quality: smooth surface, low surface roughness, no defect and no damage, and has excellent TTV, warp and other surface parameters. The processing quality and precision of the silicon carbide material directly influence the performance of the device. However, the hardness of the silicon carbide material is large and is only about 0.5 lower than that of diamond; the material has high chemical stability and hardly reacts with any strong acid or strong alkali, so the material is in the current situation of high processing difficulty.
For the processing technology of silicon carbide materials, crystal cutting is a very critical link, and plays a decisive role in wafer quality. At present, the common wafer cutting in the market comprises diamond wire cutting, oil sand wire cutting and the like, the saw kerf loss of the diamond wire cutting is larger than that of the oil sand wire, the cutting precision is lower than that of the oil sand wire, and the problem of higher cost of a single silicon carbide wafer is considered, so that the cutting of the silicon carbide wafer in the market is still mainly carried out by the oil sand wire.
Common problems of the wafer after being cut by the wire cutting liquid in the market at present mainly comprise: TTV and WARP values do not meet the requirements, line marks, etc. The system containing inorganic suspending agents such as organic modified bentonite in the linear cutting fluid is difficult to clean in the later period, abrasive materials are easily accumulated in a pipeline after the machine is stopped, waste residues are formed in the later period, and the processing precision and the cutting life are affected; the cutting fluid system without inorganic suspending agent has the common problems of low system viscosity, poor suspension stability, easy sedimentation and delamination, poor adhesion effect of abrasive materials on steel wires, difficult cleaning and the like, and influences the processing efficiency.
Disclosure of Invention
In order to solve the problems, the invention provides a diamond cutting fluid for a silicon carbide wafer and a preparation method thereof, the diamond cutting fluid is efficient and easy to clean, the diamond cutting fluid consists of diamond cutting powder controlled by fine treatment and a uniform and stable carrier, wherein the carrier of the cutting fluid consists of base oil, thixotrope solution, a dispersing agent, a surfactant, an oil product anti-aging agent and the like, and the silicon carbide wafer can be used for multi-line cutting after the substances are uniformly mixed by a certain method. In addition, the method for detecting the yield value of the diamond cutting fluid is found to shorten the judging time of the suspension stability in the formula research and development process and accelerate the formula research and development progress.
The invention is realized by the following technical scheme:
the diamond cutting fluid for the silicon carbide wafer comprises the following raw materials in percentage by weight: 8-20% of diamond powder
0.5 To 2.5 percent of dispersing agent
2-6% Of surfactant
10-40% Of thixotrope solution
31.5 To 79.5 percent of base oil;
wherein, the thixotrope solution comprises the following raw materials:
85-97% of vegetable oil
2-10% Of aluminum stearate and 1-5% of oil product anti-aging agent T501;
Wherein the content of the aluminum stearate is not less than 99 percent; the oil anti-aging agent T501 is an oil additive T501 (the main component is 2, 6-di-tert-butyl p-methylphenol).
Preferably, the diamond powder comprises one or more of single crystal diamond, polycrystalline diamond and granular diamond, and the average grain diameter is 0.5-40um.
Preferably, the dispersant is DISPERBYK-2157, DISPER BYK-180, DISPER BYK-110,
One or more of DISPERBYK-P104S.
Preferably, the surfactant is one or more of tallow amine polyoxyethylene (5) ether, oleyl alcohol polyoxyethylene ether, dodecyl alcohol polyoxyethylene (3) ether, oleyl amine polyoxyethylene (2) ether and oleic acid triglyceride.
Preferably, the base oil is one or more of C10-C30 linear alkane, C10-C30 branched alkane, C10-C30 cycloalkane.
Preferably, the vegetable oil is one or more of peanut blend oil, rapeseed blend oil and soybean oil.
The preparation method of the thixotrope solution comprises the following steps:
(1) Weighing the following raw materials in percentage by weight: aluminum stearate, vegetable oil and oil anti-aging agent T501;
(2) Mixing aluminum stearate, vegetable oil and oil product anti-aging agent T501, stirring and ultrasonically dispersing for 5-10min to ensure that the aluminum stearate is uniformly dispersed in the vegetable oil and no obvious agglomeration large particles exist;
(3) Placing the solution obtained in the step (2) under a high-speed emulsifying and dispersing machine for high-speed emulsifying and dispersing for 5-10min, so as to ensure that aluminum stearate is uniformly dispersed;
(4) Heating and stirring the solution obtained in the step (3) in a heating device at 160-180 ℃ for 2-8 hours to ensure that aluminum stearate is uniformly dispersed in vegetable oil and completely dissolved;
(5) Naturally cooling to room temperature to obtain a thixotrope solution, and standing for later use.
The preparation method of the diamond cutting fluid for the silicon carbide wafer comprises the following steps:
(1) Diamond powder is selected as fine micro powder which is finely classified and screened to remove large particles;
(2) Weighing the dispersing agent, the surfactant, the thixotrope solution and the base oil according to the required mass, stirring and ultrasonically mixing uniformly;
(3) Dispersing the solution obtained in the step (2) under a high-speed shearing emulsifying dispersant for 15-30min;
(4) Stirring the solution obtained in the step (3) and simultaneously placing the solution in ultrasonic waves for ultrasonic treatment, and in this state, putting the solution into a container
(1) The diamond powder is added into the system according to the proportion for stirring and ultrasonic dispersion for 15-30min, so that the diamond powder is ensured to be uniformly dispersed in the system and no agglomerated particles exist.
A method for evaluating the suspension stability of a diamond cutting fluid for a silicon carbide wafer comprises the following steps:
(1) Preparing diamond cutting fluid for a silicon carbide wafer to be tested;
(2) Detecting the viscosity of the diamond cutting fluid for the silicon carbide wafer, wherein the rotating speed at least comprises 0.3, 0.6, 1.5, 3 and 6;
(3) Calculating a yield value, wherein the yield value is calculated according to the following formula: (V0.3-V1.5)/100, wherein V0.3 is a viscosity of the diamond cutting fluid for silicon carbide wafer measured at a rotation speed of 0.3r/min, and V1.5 is a viscosity of the diamond cutting fluid for silicon carbide wafer measured at a rotation speed of 1.5 r/min;
(4) The yield value is higher than 40, and the suspension stability of the diamond cutting liquid for the silicon carbide wafer is excellent; the higher the yield value of the diamond cutting fluid for the silicon carbide wafer is, the better the suspension stability is.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages:
The diamond cutting fluid for the silicon carbide wafer solves the problems of poor adhesion performance and poor suspension to abrasive materials of the conventional easy-to-clean suspension fluid, and solves the problems of high viscosity, reduced circulating grinding number and poor cleaning performance of the later-stage waste liquid of the cutting fluid with good suspension property;
The diamond cutting fluid for the silicon carbide wafer reduces the discharge amount of waste liquid and the processing cost while increasing the number of circulating cutting mills;
3. The diamond cutting fluid for the silicon carbide wafer has simple production mode and is easy to produce in mass;
4. the method for judging the suspension stability of the diamond cutting fluid for the silicon carbide wafer is simple to operate, and the research and development time of a formula can be greatly shortened.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below in connection with the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The diamond cutting fluid for multi-line cutting of the silicon carbide wafer is prepared from the following raw materials in parts by weight:
the thixotrope solution is prepared from the following raw materials in parts by weight:
① Thixotrope solution: weighing the required raw materials according to the proportion, mixing and stirring the goldfish peanut blend oil, aluminum stearate and an oil product anti-aging agent T501 uniformly, emulsifying and dispersing for 5min under a high-speed emulsifying and dispersing machine, heating and stirring the solution in a heating device at 165 ℃ for 4h, ensuring that the aluminum stearate in a container is completely dissolved and dispersed in the goldfish peanut blend oil, and cooling to room temperature for standby.
② Diamond cutting liquid for silicon carbide wafer multi-line cutting: the method comprises the steps of weighing required raw materials except the diamond powder according to the proportion, uniformly mixing and stirring the raw materials, placing the raw materials under a high-speed emulsifying and dispersing machine for high-speed shearing and dispersing for 30min to ensure that the system is uniformly mixed without heterogeneous phase, placing the raw materials into an ultrasonic stirrer for stirring ultrasonic, weighing the diamond powder with required quality, adding the diamond powder into the solution for stirring ultrasonic dispersing for 20min, and ensuring that the diamond powder is completely and uniformly dispersed in the system.
Example 2
The diamond cutting fluid for multi-line cutting of the silicon carbide wafer is prepared from the following raw materials in parts by weight:
67% of C14-C19 isoparaffin;
The thixotrope solution is prepared from the following raw materials in parts by weight: soybean oil 91%
8% Of aluminum stearate
And the oil anti-aging agent T501 percent.
The production steps are as follows:
① Thixotrope solution: the preparation method comprises the steps of weighing required raw materials according to the proportion, mixing and stirring soybean oil, aluminum stearate and an oil product anti-aging agent T501 uniformly, placing under a high-speed emulsifying and dispersing machine for emulsifying and dispersing for 5min, placing the solution in a heating device at 180 ℃ for heating and stirring for 6h, ensuring that the aluminum stearate in a container is completely dissolved and dispersed in the soybean oil, and cooling to room temperature for standby. ② Diamond cutting liquid for silicon carbide wafer multi-line cutting: the method comprises the steps of weighing required raw materials except the diamond powder according to the proportion, uniformly mixing and stirring the raw materials, placing the raw materials under a high-speed emulsifying and dispersing machine for high-speed shearing and dispersing for 30min to ensure that the system is uniformly mixed without heterogeneous phase, placing the raw materials into an ultrasonic stirrer for stirring ultrasonic, weighing the diamond powder with required quality, adding the diamond powder into the solution for stirring ultrasonic dispersing for 20min, and ensuring that the diamond powder is completely and uniformly dispersed in the system.
Comparative example 1
The diamond cutting fluid for multi-line cutting of the silicon carbide wafer is prepared from the following raw materials in parts by weight:
① Weighing the required raw materials, and uniformly mixing and stirring oleyl alcohol polyoxyethylene (3) ether, DISPERBYK-180 and C11-C17 linear alkane;
② Adding diamond powder into the mixed solution obtained by ①, simultaneously placing the ① solution device into ultrasonic waves, and simultaneously carrying out ultrasonic stirring and dispersing for 20min.
Comparative example 2
The diamond cutting fluid for multi-line cutting of the silicon carbide wafer is prepared from the following raw materials in parts by weight:
② Placing the C14-C19 isoparaffin weighed by ① into a heating device for heating, controlling the temperature at 50 ℃,
③ Adding the weighed organic modified bentonite into the ② solution, and uniformly stirring until no large particles exist;
④ Placing the ③ solution into a high-speed emulsifying and dispersing machine to carry out high-speed emulsifying and dispersing for 20min;
⑤ Naturally cooling the ④ solution to room temperature;
⑥ And adding the weighed diamond powder into the ⑤ solution, simultaneously opening a stirring and ultrasonic device, and stirring and ultrasonic for 30min until the abrasive is completely dispersed in the system.
Example 3
A method for evaluating the suspension stability of a diamond cutting fluid for a silicon carbide wafer comprises the following steps:
(1) Preparing diamond cutting fluid for a silicon carbide wafer to be tested;
(2) Detecting the viscosity of the diamond cutting fluid for the silicon carbide wafer by using NDJ-8S (Shanghai Fang Rui instrument limited company), wherein the rotating speed at least comprises 0.3, 0.6, 1.5, 3 and 6;
(3) Calculating a yield value, wherein the yield value is calculated according to the following formula: (V0.3-V1.5)/100, wherein V0.3 is the viscosity of the diamond cutting fluid for silicon carbide wafer measured at a rotational speed of 0.3r/min, and can be regarded as the viscosity of the solution which can be accurately detected at a rotational speed of 0r/min or more and is closest to the stationary state, V1.5 is the viscosity of the diamond cutting fluid for silicon carbide wafer measured at a rotational speed of 1.5r/min, and can be regarded as the viscosity of the solution in a state where the flow of the solution is just started, and the yield value is expressed as the force required for the flow of the fluid just started;
(4) The yield value is higher than 40, and the suspension stability of the diamond cutting liquid for the silicon carbide wafer is excellent; the higher the yield value of the diamond cutting fluid for the silicon carbide wafer is, the better the suspension stability is.
When the suspension stability of the diamond cutting fluid for the silicon carbide wafer is tested by using the method for evaluating the suspension stability of the diamond cutting fluid for the silicon carbide wafer, the suspension stability of the sample with high yield value to the abrasive is better by calculating and comparing the yield value of each sample to be tested.
The evaluation method greatly saves time compared with the traditional method (judging the suspension stability of the diamond cutting fluid through long-time standing).
Test examples
The following tests were performed on the diamond cutting fluids for silicon carbide wafers described in examples 1 and 2 and comparative examples 1 and 2, respectively;
(1) The viscosity V6 is detected by NDJ-8S (Shanghai Fang Rui instruments Co., ltd.), wherein V6 is the viscosity of the diamond cutting fluid for silicon carbide wafer measured at a rotation speed of 6 r/min;
(2) Yield value was determined as described in example 3;
(3) Standing for two weeks, and observing and recording the suspension stability state during standing;
(4) And carrying out multi-wire cutting on silicon carbide by matching with a multi-wire cutting machine, and collecting an application feedback result.
The above data are plotted as table 1;
The results show that ① example 1 and example 2 have the best suspension stability to the abrasive and the corresponding yield value is higher; comparative example 2 times, comparative example 1 was worst and had the smallest yield value, i.e., the magnitude of the yield value was such as to verify the suspension stability of the cutting fluid formulation to abrasive materials; ② As can be seen by comparing example 1 with comparative example 1, the cutting fluid with excellent suspension stability of the abrasive material of the cutting fluid has higher cutting efficiency and better wafer quality; ③ Comparison of the embodiment 2 and the comparative example 2 shows that under the condition of slightly different suspension stability of the cutting fluid, the cutting fluid has more processing grinding numbers, namely the cutting fluid with the same dosage has more cutting times, thus greatly reducing the dosage of the cutting fluid and the discharge amount of the waste liquid in the later period, reducing the production cost and reducing the environmental pollution; the cutting fluid disclosed by the invention has the advantages that the defect of quick heating in the cutting process is overcome, and the cutting fluid is easier to clean in the later period.
While the invention has been described in connection with certain embodiments, it is not intended that the invention be limited thereto; for those skilled in the art to which the present invention pertains and the related art, on the premise of based on the technical scheme of the present invention, the expansion, the operation method and the data replacement should all fall within the protection scope of the present invention.
Claims (6)
1. The diamond cutting fluid for the silicon carbide wafer is characterized by comprising the following raw materials in percentage by weight:
8-20% of diamond powder
0.5 To 2.5 percent of dispersing agent
2-6% Of surfactant
10-40% Of thixotrope solution
31.5 To 79.5 percent of base oil;
wherein, the thixotrope solution comprises the following raw materials:
85-97% of vegetable oil
Aluminum stearate 2-10%
1-5% Of oil anti-aging agent T501;
the surfactant is one or more of tallow amine polyoxyethylene (5) ether, oleyl alcohol polyoxyethylene ether, dodecyl alcohol polyoxyethylene (3) ether, oleyl amine polyoxyethylene (2) ether and oleic acid triglyceride;
The preparation method of the thixotrope solution comprises the following steps:
(1) Weighing the following raw materials in percentage by weight: aluminum stearate, vegetable oil and oil anti-aging agent T501;
(2) Mixing aluminum stearate, vegetable oil and oil product anti-aging agent T501, stirring and ultrasonically dispersing for 5-10min to ensure that the aluminum stearate is uniformly dispersed in the vegetable oil and no obvious agglomeration large particles exist;
(3) Placing the solution obtained in the step (2) under a high-speed emulsifying and dispersing machine for high-speed emulsifying and dispersing for 5-10min, so as to ensure that aluminum stearate is uniformly dispersed;
(4) Heating and stirring the solution obtained in the step (3) in a heating device at 160-180 ℃ for 2-8 hours to ensure that aluminum stearate is uniformly dispersed in vegetable oil and completely dissolved;
(5) Naturally cooling to room temperature to obtain a thixotrope solution, and standing for later use.
2. The diamond cutting fluid for silicon carbide wafers according to claim 1, wherein the diamond powder comprises one or more of single crystal diamond, polycrystalline diamond, and granular diamond, and has an average particle diameter of 0.5 to 40um.
3. The diamond cutting fluid for silicon carbide wafers according to claim 1, wherein the dispersant is one or more of DISPERBYK-2157, DISPERBYK-180, DISPERBYK-110, DISPERBYK-P104S.
4. The diamond cutting fluid for silicon carbide wafers according to claim 1, wherein the base oil is one or more of C10-C30 linear alkanes, C10-C30 branched alkanes, and C10-C30 cycloalkanes.
5. The diamond cutting fluid for silicon carbide wafers according to claim 1, wherein the vegetable oil is one or more of peanut blend oil, rapeseed blend oil and soybean oil.
6. A method for preparing a diamond cutting fluid for silicon carbide wafers according to any one of claims 1 to 5, comprising the steps of:
(1) Diamond powder is selected as fine micro powder which is finely classified and screened to remove large particles;
(2) Weighing the dispersing agent, the surfactant, the thixotrope solution and the base oil according to the required mass, stirring and ultrasonically mixing uniformly;
(3) Dispersing the solution obtained in the step (2) under a high-speed shearing emulsifying dispersing machine for 15-30min;
(4) Stirring the solution obtained in the step (3) and simultaneously placing the solution in ultrasonic waves for ultrasonic treatment, and adding the diamond powder in the step (1) into a system in proportion under the condition of stirring and ultrasonic dispersion for 15-30min to ensure that the diamond powder is uniformly dispersed in the system and has no agglomerated particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211594625.6A CN116064189B (en) | 2022-12-13 | 2022-12-13 | Diamond cutting fluid for silicon carbide wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211594625.6A CN116064189B (en) | 2022-12-13 | 2022-12-13 | Diamond cutting fluid for silicon carbide wafer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116064189A CN116064189A (en) | 2023-05-05 |
| CN116064189B true CN116064189B (en) | 2024-10-11 |
Family
ID=86169133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211594625.6A Active CN116064189B (en) | 2022-12-13 | 2022-12-13 | Diamond cutting fluid for silicon carbide wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116064189B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105176647A (en) * | 2015-10-14 | 2015-12-23 | 苏州市晶协高新电子材料有限公司 | Wire-electrode cutting oil and preparation method thereof |
| CN114806502A (en) * | 2022-04-29 | 2022-07-29 | 河南创研新材料科技有限公司 | Grinding fluid for processing silicon carbide wafer and preparation method thereof |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1334965C (en) * | 1988-09-08 | 1995-03-28 | Terrance O. Brown | Lubricating composition |
| JPH0680881A (en) * | 1992-08-31 | 1994-03-22 | Toray Dow Corning Silicone Co Ltd | Electroviscus liquid |
| US5527204A (en) * | 1993-08-27 | 1996-06-18 | Rhoades; Lawrence J. | Abrasive jet stream cutting |
| JPH11349979A (en) * | 1998-01-09 | 1999-12-21 | Nof Corp | Aqueous cutting fluid, aqueous cutting agent and cutting of hard and brittle material using the same |
| JP2002053882A (en) * | 2000-08-04 | 2002-02-19 | Samitto Corporation:Kk | Slurry composition for cutting brittle material and cutting method using the same |
| JP2002060777A (en) * | 2000-08-22 | 2002-02-26 | Ishii Hyoki Corp | Aqueous slurry for wire saws |
| JP2005097605A (en) * | 2003-09-04 | 2005-04-14 | Sumitomo Metal Ind Ltd | Seamless steel pipe processing lubricant composition |
| JP4596143B2 (en) * | 2005-04-20 | 2010-12-08 | 戸田工業株式会社 | Magnetorheological fluid |
| KR20120056196A (en) * | 2010-11-24 | 2012-06-01 | 주식회사 엘지생활건강 | Environment-friendly water-soluble cutting fluid for wafer, and composition containing the same cutting fluid |
| CN103525532B (en) * | 2013-10-18 | 2016-01-06 | 山东昊达化学有限公司 | A kind of carborundum line cutting liquid and preparation method thereof |
| CN104342273A (en) * | 2014-09-18 | 2015-02-11 | 江西赛维Ldk太阳能高科技有限公司 | Cooling liquid for cutting polycrystalline silicon chip employing diamond wire |
| JP2016135840A (en) * | 2015-01-14 | 2016-07-28 | 三洋化成工業株式会社 | Lapping liquid for rigid material |
| CN105112133A (en) * | 2015-07-31 | 2015-12-02 | 苏州市宝玛数控设备有限公司 | Photovoltaic solar silicon wafer cutting liquid |
| CN105647475B (en) * | 2015-12-31 | 2017-12-01 | 河南联合精密材料股份有限公司 | Oily two molten diamond grinding fluids of a kind of water and preparation method thereof |
| CN110862800A (en) * | 2019-11-22 | 2020-03-06 | 南宁珀源能源材料有限公司 | Single-component fixing adhesive for diamond wire cutting and preparation method and application method thereof |
| CN113831957A (en) * | 2021-09-30 | 2021-12-24 | 安徽微芯长江半导体材料有限公司 | Preparation method of diamond cutting fluid special for silicon carbide |
| CN114989880B (en) * | 2022-07-06 | 2023-07-21 | 湖南三安半导体有限责任公司 | Cutting fluid and preparation method thereof |
-
2022
- 2022-12-13 CN CN202211594625.6A patent/CN116064189B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105176647A (en) * | 2015-10-14 | 2015-12-23 | 苏州市晶协高新电子材料有限公司 | Wire-electrode cutting oil and preparation method thereof |
| CN114806502A (en) * | 2022-04-29 | 2022-07-29 | 河南创研新材料科技有限公司 | Grinding fluid for processing silicon carbide wafer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116064189A (en) | 2023-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108559602B (en) | A water-based diamond wire silicon wafer cutting fluid | |
| CN107699140B (en) | Oily grinding fluid and preparation method thereof | |
| CN103525532B (en) | A kind of carborundum line cutting liquid and preparation method thereof | |
| CN108949036B (en) | Polishing solution and method for polishing silicon carbide crystals | |
| CN111303981B (en) | Diamond wire cutting fluid and preparation method thereof | |
| CN100363477C (en) | Semiconductor silicon material water-based cutting fluid | |
| CN101623898B (en) | Chemical recovery method for mortar in wire cutting technology | |
| CN112111230A (en) | Hard alloy polishing slurry of mixed abrasive and preparation method thereof | |
| CN114231182A (en) | A kind of chemical mechanical polishing process, polishing liquid and preparation method of easily cleavable gallium oxide wafer | |
| CN104835731A (en) | Quick polishing method for large-dimension 4H,6H-SiC wafer | |
| CN112680110A (en) | Novel environment-friendly microemulsion type diamond polishing solution | |
| CN106634836A (en) | Diamond paste as well as preparation method and application thereof | |
| CN102041138B (en) | Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive | |
| CN102923706B (en) | Preparation method of silicon carbide micro powder capable of improving dispersity | |
| CN108017998A (en) | A kind of preparation method of CMP planarization liquid | |
| CN116064189B (en) | Diamond cutting fluid for silicon carbide wafer and preparation method thereof | |
| CN115975711B (en) | Foam-type diamond wire silicon wafer cutting fluid capable of improving dispersibility and reducing foaming property and preparation method thereof | |
| CN105273823B (en) | A kind of multi-thread silicon chip cutting water-soluble metalworking liquid and preparation method thereof | |
| CN113667546A (en) | Cleaning agent composition used after silicon wafer processing | |
| CN114958302B (en) | Efficient grinding fluid and preparation method and application thereof | |
| CN119505708A (en) | A kind of stable suspension aqueous diamond grinding liquid and preparation method thereof | |
| CN102712863A (en) | Polyalkylene glycol-grafted polycarboxylate suspension and dispersing agent for cutting fluids and slurries | |
| CN103242944A (en) | Multifunctional water-based environment-friendly recyclable crystal silicon precision cutting liquid | |
| CN116948600A (en) | High-suspension grinding fluid suitable for large-size silicon wafer, and preparation method and application thereof | |
| CN110699041B (en) | Particle composition for grinding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |