CN116053740B - A surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem - Google Patents
A surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem Download PDFInfo
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- CN116053740B CN116053740B CN202211464618.4A CN202211464618A CN116053740B CN 116053740 B CN116053740 B CN 116053740B CN 202211464618 A CN202211464618 A CN 202211464618A CN 116053740 B CN116053740 B CN 116053740B
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 230000007704 transition Effects 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 235000012431 wafers Nutrition 0.000 claims abstract description 20
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 238000009713 electroplating Methods 0.000 claims abstract description 3
- 230000008878 coupling Effects 0.000 claims description 30
- 238000010168 coupling process Methods 0.000 claims description 30
- 238000005859 coupling reaction Methods 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 230000005672 electromagnetic field Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 7
- 238000003466 welding Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
本发明公开了一种表贴式W波段化合物芯片硅基衬底封装集成微系统。该微系统由两层硅片经过反应离子刻蚀和电镀后构成封帽和底座。封帽下表面刻蚀有金属化凹槽，用于容纳化合物芯片安装的空间区域。底座上刻蚀有WR‑10波导口及其至微带过渡转换的安装凹槽。W波段信号从WR‑10波导口馈入，经过过渡转换和化合物芯片互连，W波段化合物芯片的加电焊盘通过金丝键合和底座上表面加电焊盘互连，再通过底座上金属化过孔和底座下表面的表贴焊盘互连，以实现和基板电源网络互连。本发明具有轻量化、低剖面和适合大规模低成本制造等优势，使用该发明技术封装后的单个或多个W波段化合物芯片可以作为表面贴装元器件使用，实现W波段系统的低成本设计。
The invention discloses a surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem. The microsystem consists of two layers of silicon wafers that undergo reactive ion etching and electroplating to form the cap and base. A metallized groove is etched on the lower surface of the cap to accommodate the space area where the compound chip is installed. The base is etched with mounting grooves for the WR‑10 waveguide port and its to microstrip transition. The W-band signal is fed in from the WR‑10 waveguide port. After transitional conversion and compound chip interconnection, the power-on pads of the W-band compound chip are interconnected with the power-on pads on the upper surface of the base through gold wire bonding, and then metallized on the base. Vias are interconnected with surface mount pads on the lower surface of the base to achieve interconnection with the substrate power network. The invention has the advantages of lightweight, low profile and suitable for large-scale low-cost manufacturing. Single or multiple W-band compound chips packaged using the technology of the invention can be used as surface mount components to realize low-cost design of W-band systems. .
Description
Technical Field
The invention belongs to the field of millimeter wave compound chip packaging, and particularly relates to a surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem.
Background
The W wave band has wide application prospect in the fields of automatic driving vehicle-mounted radar, mobile communication point-to-point data feedback, synthetic aperture radar, missile-borne guide heads and the like. Conventional W-band modules are mostly constructed using machined WR-10 standard waveguides as interconnects. On the one hand, such machined waveguide modules not only require high machining accuracy (+ -10 microns), but are also bulky and disadvantageous for miniaturized integration. On the other hand, the assembly of the fin line and the probe transition for transition conversion of the micro-strip and the WR-10 wave band requires special gold wire bonding operation of mature process personnel, and the batch consistency of products cannot be well ensured. These reasons greatly limit the large-scale application of conventional W-band waveguide systems.
The existing large-scale commercial W-band chip is concentrated in the civil 76-81GHz vehicle radar field, the embedded wafer level package is adopted to realize the fan-out of the W-band silicon-based multifunctional chip, and the W-band silicon-based multifunctional chip is interconnected with the mounting substrate in a solder ball flip-chip manner. However, this flip-chip approach after embedded wafer level packaging cannot meet the packaging requirements of high performance W-band compound chips, and many compound chips have high grounding and heat dissipation requirements, most of which rely on sintering and micro-assembly bonding to achieve open packaging. Therefore, a light-weight and low-profile surface-mounted type W-band compound chip packaging integrated micro system is urgently needed in the market and industry, and the integrated micro system can be provided with the characteristics of low-cost and rapid surface-mounted type packaging installation of traditional circuit components.
Disclosure of Invention
In order to achieve miniaturization and light weight of the whole packaging structure, the invention is more suitable for the use scene of the whole packaging structure as a labeling element, and provides a surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem aiming at the defects in the prior art.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a surface-mounted W-band compound chip silicon-based substrate packaging integrated micro system is characterized in that the micro system is formed by bonding two layers of silicon wafers after etching and electroplating by a reactive ion etching bulk silicon process, wherein a top layer of silicon wafer forms a sealing cap, and a bottom layer of silicon wafer forms a base; a groove is etched at the bottom of the sealing cap, and the groove forms a mounting cavity area of each integrated W-band compound chip and chip capacitor on the packaging base; the base is etched with a plurality of standard WR-10 waveguide coupling windows, a transition conversion structure mounting groove, a plurality of metallized through holes, an internal direct current power-up bonding pad and an external direct current power-up bonding pad; a transition conversion passive circuit structure from a waveguide coupling window to a micro-strip of the compound chip is arranged in the transition conversion structure mounting groove and is used for realizing the input and output of an electromagnetic field; the internal direct current power-on bonding pad and the external direct current power-on bonding pad are respectively positioned at the top and the bottom of the base, the external direct current power-on bonding pad is connected with an external power supply, and electricity is transmitted to the internal direct current power-on bonding pad through the metallized via hole, and the internal direct current power-on bonding pad supplies power to the compound chip.
In order to optimize the technical scheme, the specific measures adopted further comprise:
further, the silicon wafer is a high-resistance silicon wafer or a low-resistance silicon wafer.
Further, the compound chip is a single compound chip or a combination of a plurality of compound chips, and the working frequency band of the compound chip comprises a W wave band or a sub-millimeter wave band.
Further, the compound chip is an active chip requiring direct current power-up or a passive chip not requiring direct current power-up.
Further, the sealing cap and the base are bonded together through a metal bonding process.
Further, the inner wall of the groove, the inner wall of the standard WR-10 waveguide coupling window and the inner wall of the transition structure groove are all metallized.
Further, a bottom bonding pad for surface mounting is further arranged at the bottom of the base, and the bottom bonding pad is connected with a ground plane arranged at the top of the base through a metallized via hole.
Further, an alignment mark for mounting the compound chip is also arranged on the top of the base.
Further, the transition conversion structure mounting groove is used for mounting a transition conversion passive circuit structure based on a substrate integrated waveguide vertical coupling cavity design.
Further, the interconnection part of the direct current power-up bonding pad and the metallized through hole adopts metallized surface treatment with a solder resistance characteristic.
The beneficial effects of the invention are as follows: the invention adopts a lightweight and low-profile silicon substrate medium to carry out reactive ion etching treatment and then carries out surface metallization treatment to form a metal shielding cavity area, a standard WR-10 waveguide coupling window, a metallization via hole and the like required by the integration of a compound chip and related components. Compared with the traditional metal waveguide packaging design, the invention avoids the problems of heavy size, further installation of a dielectric plate required for power supply of an internal compound chip and the like caused by using metal, and realizes the light weight and low-profile surface-mounted design of a packaging structure. In addition, the surface-mounted bonding pad at the bottom of the package is in a shape of a bonding pad obtained through metallization treatment on the surface of a medium, the degree of freedom of the shape of the bonding pad is high, and the shape of the bonding pad can be designed according to the requirement of an installed substrate, so that a packaged chip can be used as a surface-mounted device, and integration with other devices is easy to realize.
Drawings
Fig. 1 is a three-dimensional schematic diagram of a surface-mounted W-band compound chip silicon-based substrate package integrated microsystem according to the present invention.
Fig. 2 is a top view of a design label of a surface-mounted W-band compound chip silicon-based substrate package integrated micro system according to the present invention.
Fig. 3 is a left side view of a design label of a surface-mounted W-band compound chip silicon-based substrate package integrated micro system according to the present invention.
Fig. 4 is a schematic diagram of a surface-mounted W-band compound chip silicon-based substrate package integrated micro system on a base according to the present invention.
The reference numerals are as follows: 1-sealing the cap; 2-grooves; 3-a base; a 4-waveguide coupling window; 5-a transition structure mounting groove; 6-metallizing the via hole; 7-internal direct current adding electric welding disk; 8-external direct current power-up pads; 9-bottom pads; 10-aligning marks; 11-transition switching passive circuit structure; 12-compound chip; 13-chip capacitance; 14-gold wire bonding wire.
Detailed Description
The invention will now be described in further detail with reference to the accompanying drawings.
The integrated microsystem of the surface-mounted W-band compound chip silicon-based substrate package is shown in fig. 1, and the chip package is formed by bonding two layers of high-resistance silicon wafers through a metal bonding process in the embodiment, but the silicon wafers are not limited to high-resistance silicon wafers, and can be low-resistance silicon wafers. The microsystem includes: the chip comprises a sealing cap 1, a groove 2, a base 3, a standard WR-10 waveguide coupling window 4, a waveguide coupling window-chip microstrip transition conversion structure mounting groove 5, a metallized via 6, an internal Direct Current (DC) power-on pad 7, an external DC power-on pad 8, a bottom pad 9 and a chip position alignment mark 10.
The groove 2 is etched in the sealing cap 1 to form a cavity, and the inner wall of the cavity is required to be metallized for packaging elements such as chips, capacitors and the like on the base 3. Standard WR-10 waveguide coupling window 4 and waveguide coupling window to chip microstrip transition structure mounting groove 5 are etched in base 3, and the inner wall needs to be metallized. The standard WR-10 waveguide coupling windows 4 of the millimeter wave input and output ports can be more than 2 and can be expanded to more than 2 according to the needs. The transition conversion structure which is realized by different technical designs can be selected from the transition conversion mounting groove 5 from the waveguide coupling window to the chip microstrip input and output.
The metallized via holes 6 are located in the base 3, and part of the metallized via holes 6 connect the internal dc-added electric pads 7 and the external dc-added electric pads 8, and the purpose of part of the metallized via holes 6 is to connect the ground on the upper and lower surfaces, and the upper surface of the base 3 is a metal ground except for four pads, and the metal ground is formed by plating gold on the silicon-based surface. The internal dc-powered pads 7 and the external dc-powered pads 8 are located at the top and bottom of the base 3, respectively, the bottom pads 9 are located at the bottom of the base 3, and the interconnection portion between the external dc-powered pads 8 and the metal vias 6 is surface-metallized with solder resist properties. A chip position alignment mark 10 is located on top of the base 3, indicating the mounting position of the chip at the time of packaging. The microsystem may be used as a surface mount device, where the shape of the external dc powered pads 8 may be consistent with the pad shape of the mounted substrate.
The compound chip type of the microsystem package is various, including an active compound chip or a passive compound chip, etc., the working frequency band of the chip is not limited to the W wave band, and the chip can be expanded to a higher sub-millimeter wave frequency band.
When the electromagnetic field is input, the electromagnetic field is coupled to a transition conversion structure vertically above through a standard WR-10 waveguide coupling window 4, and the electromagnetic field is transmitted to a chip microstrip from the waveguide coupling window 4, so that the interconnection from an input end to a chip is realized; when the electromagnetic field is output, the electromagnetic field is output from the micro-strip at the output end of the chip and then is transmitted to the waveguide coupling window 4 through the transition conversion structure from the micro-strip to the waveguide coupling window 4 for coupling output. By adopting a proper transition structure, such as a transition structure based on the substrate integrated waveguide vertical coupling cavity design, the vertical coupling input/output from the input/output waveguide coupling window 4 to the chip microstrip line can be realized, and the volume of the packaging structure is effectively reduced. The silicon wafer sealing cap with the groove 2 etched on the top layer and the base 3 are bonded together through a metal bonding process, and the whole structure is packaged to provide mechanical protection and electromagnetic shielding.
Fig. 2 is a top view of a design label of a chip package, and specific physical parameters are:a=10mm, b=18mm, l 1 =3.5mm, l 2 =0.5mm, l 3 =1mm, l 4 =5.15mm, l 5 =1.5mm, l 6 =1mm, l 7 =1.5mm, l 8 =7.85mm, l 9 =0.65mm, l 10 =0.95mm, l 11 =0.6mm, l 12 =0.5mm, l 13 =0.65mm, l 14 =1.25mm, l 15 =0.7mm, l 16 =2mm, l 17 =1mm, l 18 =1mm, l 19 =1.5mm, l 20 =0.5mm, w 1 =5mm, w 2 =1.5mm, w 3 =2.6mm, w 4 =1.2mm, D 1 =0.6mm, D 2 =0.6mm, D 3 =0.4mm, D 4 =1mm。
fig. 3 is a top view of a design label of a chip package, and specific physical parameters are:l 21 =9.2mm, l 22 =5mm, l 23 =5mm, l 24 =4mm, h 1 =1.5mm, h 2 =1mm, h 3 =2mm, h 4 =1mm, h 5 =1mm。
fig. 4 is a top physical view of a base of a chip package. In the embodiment, a transition conversion structure based on a substrate integrated waveguide vertical coupling cavity design is adopted as a transition conversion passive circuit structure 11 from the waveguide coupling window 4 to the microstrip of the compound chip 12, so that the interconnection from the input end to the compound chip 12 is realized. By means of the substrate integrated waveguide vertical coupling cavity transition conversion passive circuit structure, TE mode electromagnetic fields input/output from the waveguide coupling window 4 can be converted into TEM mode electromagnetic fields which can be transmitted by microstrip lines on the compound chip 12, and meanwhile coupling input/output in the vertical direction from the waveguide coupling window 4 of input/output to the microstrip lines of the compound chip 12 is achieved, so that miniaturization of the chip packaging structure is facilitated.
In the embodiment, the compound chip 12 is an active chip, an external direct current power supply is used for powering the external direct current adding electric welding disk 8 at the bottom of the base 3, the external direct current power is transmitted to the internal direct current adding electric welding disk 7 at the top of the base 3 through the metallized via hole 6, the direct current power supply to the compound chip 12 is realized after the chip capacitor 13, and the electric welding disk, the capacitor and the compound chip 12 are interconnected through the gold wire bonding wire 14.
It should be noted that the terms like "upper", "lower", "left", "right", "front", "rear", and the like are also used for descriptive purposes only and are not intended to limit the scope of the invention in which the invention may be practiced, but rather the relative relationship of the terms may be altered or modified without materially altering the teachings of the invention.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the invention without departing from the principles thereof are intended to be within the scope of the invention as set forth in the following claims.
Claims (9)
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| CN202211464618.4A CN116053740B (en) | 2023-02-08 | 2023-02-08 | A surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9059490B2 (en) * | 2013-10-08 | 2015-06-16 | Blackberry Limited | 60 GHz integrated circuit to printed circuit board transitions |
| CN108832242A (en) * | 2018-06-07 | 2018-11-16 | 中国电子科技集团公司第五十五研究所 | Minimize W-waveband MEMS gap waveguide bandpass filter |
| CN113079623A (en) * | 2021-03-29 | 2021-07-06 | 电子科技大学 | W-band millimeter wave chip multilayer dielectric substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7312505B2 (en) * | 2004-03-31 | 2007-12-25 | Intel Corporation | Semiconductor substrate with interconnections and embedded circuit elements |
| KR101077011B1 (en) * | 2009-06-09 | 2011-10-26 | 서울대학교산학협력단 | Method for producing micromachined air-cavity resonator and a micromachined air-cavity resonator, band-pass filter and ocillator using the method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9059490B2 (en) * | 2013-10-08 | 2015-06-16 | Blackberry Limited | 60 GHz integrated circuit to printed circuit board transitions |
| CN108832242A (en) * | 2018-06-07 | 2018-11-16 | 中国电子科技集团公司第五十五研究所 | Minimize W-waveband MEMS gap waveguide bandpass filter |
| CN113079623A (en) * | 2021-03-29 | 2021-07-06 | 电子科技大学 | W-band millimeter wave chip multilayer dielectric substrate |
Non-Patent Citations (1)
| Title |
|---|
| Miniaturized W-Band Gap Waveguide Bandpass Filter Using the MEMS Technique for Both Waveguide and Surface Mounted Packaging;Yongrong Shi et al.;《IEEE Transactions on Circuits and Systems II Express Briefs》;第938-942页 * |
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