CN116031033A - Direct-current low-residual voltage type piezoresistor and preparation method thereof - Google Patents
Direct-current low-residual voltage type piezoresistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 38
- 238000005245 sintering Methods 0.000 claims description 35
- 238000005469 granulation Methods 0.000 claims description 30
- 230000003179 granulation Effects 0.000 claims description 30
- 239000007921 spray Substances 0.000 claims description 30
- 239000011787 zinc oxide Substances 0.000 claims description 19
- 239000011268 mixed slurry Substances 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 101710134784 Agnoprotein Proteins 0.000 claims description 6
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 claims description 6
- 238000001764 infiltration Methods 0.000 claims description 6
- 230000008595 infiltration Effects 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- 230000032683 aging Effects 0.000 abstract description 15
- 150000002500 ions Chemical class 0.000 abstract description 14
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 238000013508 migration Methods 0.000 abstract description 5
- 230000005012 migration Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 238000010248 power generation Methods 0.000 description 1
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
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- H01C7/108—Metal oxide
- H01C7/112—ZnO type
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Abstract
The invention relates to the technical field of piezoresistors, in particular to a direct-current low-residual voltage type piezoresistor and a preparation method thereof, wherein the formula components comprise auxiliary materials and ZnO as main components, and the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca, and by adding Ag element, can effectively inhibit unstable ion migration in the grain boundary, thereby improving the aging resistance and the through-flow capacity of the direct current load; by adding B, ba and Ca elements, a glass phase can be formed with bismuth oxide, the compactness of a piezoresistor grain boundary is effectively improved, and the phenomenon of initial leakage current increase caused by the addition of Al ions is improved, so that the direct current aging characteristic of the formula is more stable.
Description
Technical Field
The invention relates to the technical field of piezoresistors, in particular to a direct-current low-residual voltage type piezoresistor and a preparation method thereof.
Background
The zinc oxide piezoresistor has the advantages of simple process, low cost, convenient use and the like, is widely applied, is mainly used for overvoltage protection and surge suppression of various electrical equipment and lightning arresters, and is widely applied to the protection of automobile industry, communication equipment, railway signals, miniature motors and various electronic components. The main function of the piezoresistor is to perform overvoltage protection, so that under the condition that overvoltage occurs in a system, the lower the residual voltage at two ends of the piezoresistor is, the better the protection effect on equipment and circuits at the rear end of the piezoresistor is; in addition, with the development of new energy sources, such as photovoltaic, electric vehicles, wind power generation and the like, the application of direct current power equipment is more popular, and the service life of the piezoresistor under direct current is more required. Based on the background, a low residual voltage type varistor with direct current application resistance is developed, accords with the development trend of varistor technology and has wide application prospect.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the direct-current low-residual voltage type varistor can effectively inhibit initial leakage current, so that the direct-current aging characteristic of the varistor is more stable.
In order to solve the technical problems, the first technical scheme adopted by the invention is as follows:
a DC low residual voltage type piezoresistor comprises auxiliary materials and ZnO, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca.
The second technical scheme adopted by the invention is as follows:
a preparation method of a direct-current low-residual voltage type piezoresistor comprises the following steps:
s1, providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca, and carrying out mixed abrasive operation on the auxiliary materials to obtain mixed slurry;
s2, performing spray granulation operation on the mixed slurry to obtain spray granulation powder;
s3, carrying out dry pressing forming operation on the spray granulation powder to obtain a green body;
s4, sintering the green blanks to obtain ceramic chips;
and S5, performing silver electrode sintering and infiltration operation on the ceramic chip, performing pin welding operation, and performing insulation treatment by using epoxy resin to obtain the direct-current low-residual voltage type piezoresistor.
The invention has the beneficial effects that:
according to the scheme, by adding the Al element and taking Al ions as a donor doping element of ZnO crystal grains, the resistivity of the ZnO crystal grains can be reduced, so that the residual voltage level of the piezoresistor in a high-current area is reduced; by adding Ag element, the migration of unstable ions in the grain boundary can be effectively inhibited, so that the aging resistance and the through-flow capacity of the direct current load are improved; by adding B, ba and Ca elements, a glass phase can be formed with bismuth oxide, the compactness of a piezoresistor grain boundary is effectively improved, and the phenomenon of initial leakage current increase caused by the addition of Al ions is improved, so that the direct current aging characteristic of the formula is more stable.
Drawings
FIG. 1 is a flow chart showing the steps of a method for manufacturing a DC low residual voltage type varistor according to the present invention.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
The invention provides a technical scheme that:
a DC low residual voltage type piezoresistor comprises auxiliary materials and ZnO, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca.
From the above description, the beneficial effects of the invention are as follows:
according to the scheme, by adding the Al element and taking Al ions as a donor doping element of ZnO crystal grains, the resistivity of the ZnO crystal grains can be reduced, so that the residual voltage level of the piezoresistor in a high-current area is reduced; by adding Ag element, the migration of unstable ions in the grain boundary can be effectively inhibited, so that the aging resistance and the through-flow capacity of the direct current load are improved; by adding B, ba and Ca elements, a glass phase can be formed with bismuth oxide, the compactness of a piezoresistor grain boundary is effectively improved, and the phenomenon of initial leakage current increase caused by the addition of Al ions is improved, so that the direct current aging characteristic of the formula is more stable.
Further, the Al-containing alloy 3+ Is Al (NO) 3 ) 3.9 H 2 O, said Ag-containing + Is AgNO 3 The B-containing 3+ Is H in solution 3 BO 3 The at least one metal element-containing compound is selected from: bi (Bi) 2 O 3 、Sb 2 O 3 、Co 2 O 3 、MnCO 3 、Cr 2 O 3 NiO, baO or Ca 2 CO 3 Any one or more of the following.
Further, the molar ratio is as follows: znO: bi (Bi) 2 O 3 ：Sb 2 O 3 ：Co 2 O 3 ：MnCO 3 ：Cr 2 O 3 ：NiO：Al(NO 3 ) 3.9 H 2 O：AgNO 3 ：BaO：CaCO 3 ：H 3 BO 3 ＝(92～98)：(0.75～1.2)：(0.4～1.0)：(0.4～1.0)：(0.4～1.0)：(0.2～0.5)：(0.7～1.4)：(0.01～0.05)：(0.01～0.1)：(0.05～0.2)：(0.05～0.2)：(0.1～0.2)。
As can be seen from the description, according to the scheme, by properly adding a certain proportion of Al elements, al ions are taken as donor doping elements of ZnO crystal grains, so that the resistivity of the ZnO crystal grains can be reduced, and the residual voltage level of the piezoresistor in a high-current area can be reduced; by adding Ag element in proper proportion, the migration of unstable ions in the grain boundary can be effectively inhibited, so that the aging resistance of the grain boundary to direct current load and the through-current capacity of the grain boundary are improved; by adding B, ba and Ca elements in a certain proportion, a glass phase can be formed with bismuth oxide, the compactness of a piezoresistor grain boundary is effectively improved, and the phenomenon of initial leakage current increase caused by the addition of Al ions is improved, so that the direct current aging characteristic of the formula is more stable.
Referring to fig. 1, another technical solution provided by the present invention is as follows:
a preparation method of a direct-current low-residual voltage type piezoresistor comprises the following steps:
s1, providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca, and carrying out mixed abrasive operation on the auxiliary materials to obtain mixed slurry;
s2, performing spray granulation operation on the mixed slurry to obtain spray granulation powder;
s3, carrying out dry pressing forming operation on the spray granulation powder to obtain a green body;
s4, sintering the green blanks to obtain ceramic chips;
and S5, performing silver electrode sintering and infiltration operation on the ceramic chip, performing pin welding operation, and performing insulation treatment by using epoxy resin to obtain the direct-current low-residual voltage type piezoresistor.
From the above description, the beneficial effects of the invention are as follows:
according to the scheme, the preparation of the mixed slurry is completed by adopting one-time mixing ball milling, the process is simple and stable, the mixed slurry is subjected to spray granulation operation to obtain spray granulation powder, the spray granulation powder is subjected to dry pressing forming operation to obtain a green body, the green body is subjected to sintering operation to obtain a ceramic chip, after the silver electrode sintering operation is carried out on the ceramic chip, the pin welding operation is carried out, the insulation treatment is carried out by adopting epoxy resin, and the direct-current low-residual voltage type piezoresistor is obtained, and the dry pressing forming operation, the sintering operation and the electrode sintering operation are all completed by adopting an automatic process, so that the production efficiency is high.
Further, the step S1 specifically includes:
providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And carrying out mixed sand grinding operation on the auxiliary materials, wherein the grinding particle size range is 1.0-2.0 mu m, then adding zinc oxide and deionized water, controlling the solid content to be 50-60%, and then carrying out mixing and stirring for 2h to obtain the mixed slurry.
Further, the spray granulation operation in step S2 is performed by centrifugal spray granulation.
Further, the step S3 specifically includes:
dry-pressing the spray granulation powder by using a mechanical tablet press and a rectangular die with the size of 22mm x 25mm after sintering, so as to obtain a green body, wherein the molding density of the green body is 3.1g/cm 3 ～3.3g/cm 3 。
Further, the step S4 specifically includes:
and placing the green blanks into a closed sagger for sintering, wherein the sintering highest temperature range is 1060-1300 ℃, and the voltage gradient range after sintering is 150-300V/mm.
The first embodiment of the invention is as follows:
the formula components of the direct-current low-residual-voltage type piezoresistor comprise auxiliary materials and ZnO as main components, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca.
The Al containing 3+ Is Al (NO) 3 ) 3.9 H 2 O, said Ag-containing + Is AgNO 3 The B-containing 3+ Is H in solution 3 BO 3 The at least one metal element-containing compound is selected from: bi (Bi) 2 O 3 、Sb 2 O 3 、Co 2 O 3 、MnCO 3 、Cr 2 O 3 NiO, baO or Ca 2 CO 3 Any one or more of the following.
The molar ratio is as follows: znO: bi (Bi) 2 O 3 ：Sb 2 O 3 ：Co 2 O 3 ：MnCO 3 ：Cr 2 O 3 ：NiO：Al(NO 3 ) 3.9 H 2 O：AgNO 3 ：BaO：CaCO 3 ：H 3 BO 3 ＝(92～98)：(0.75～1.2)：(0.4～1.0)：(0.4～1.0)：(0.4～1.0)：(0.2～0.5)：(0.7～1.4)：(0.01～0.05)：(0.01～0.1)：(0.05～0.2)：(0.05～0.2)：(0.1～0.2)。
In this example, three proportioning schemes are listed in table 1, and are specifically as follows:
TABLE 1
In the composition of the formula components, the resistivity of ZnO grains is reduced by adding a larger proportion of Al elements, and meanwhile, the initial leakage current can be effectively inhibited by adding a certain proportion of B, ba and Ca elements.
In the formula components, the varistor with stable direct-current aging characteristic can be obtained by adding Ag, B, ba, ca and other elements, so that an additional direct-current aging resistant side glaze coating is not required to be applied.
The direct-current low-residual voltage type piezoresistor designed by the scheme can be used in the photovoltaic field.
Referring to fig. 1, a second embodiment of the present invention is as follows:
a preparation method of a direct-current low-residual voltage type piezoresistor comprises the following steps:
s1, providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca, and carrying out mixed abrasive operation on the auxiliary materials to obtain mixed slurry; the step S1 specifically comprises the following steps:
providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And carrying out mixed sand grinding operation on the auxiliary materials, wherein the grinding particle size range is 1.0-2.0 mu m, then adding zinc oxide and deionized water, controlling the solid content to be 50-60%, and then carrying out mixing and stirring for 2h to obtain the mixed slurry.
S2, performing spray granulation operation on the mixed slurry to obtain spray granulation powder; the spray granulation operation in step S2 is performed by means of centrifugal spray granulation.
S3, carrying out dry pressing forming operation on the spray granulation powder to obtain a green body; the step S3 specifically comprises the following steps:
dry-pressing the spray granulation powder by using a mechanical tablet press and a rectangular die with the size of 22mm x 25mm after sintering, so as to obtain a green body, wherein the molding density of the green body is 3.1g/cm 3 ～3.3g/cm 3 。
S4, sintering the green blanks to obtain ceramic chips; the step S4 specifically comprises the following steps:
and placing the green blanks into a closed sagger for sintering, wherein the sintering highest temperature range is 1060-1300 ℃, and the voltage gradient range after sintering is 150-300V/mm.
And S5, performing silver electrode sintering and infiltration operation on the ceramic chip, performing pin welding operation, and performing insulation treatment by using epoxy resin to obtain the direct-current low-residual voltage type piezoresistor.
In this example, taking the proportioning scheme a as an example, the molar proportions of specific materials are shown in table 2:
TABLE 2
Firstly, adding auxiliary materials except ZnO, carrying out mixed sanding, wherein the range of the grinding particle diameter D (50) is 1.0 mu m, then adding zinc oxide and deionized water, controlling the solid content to be 50% -60%, and then carrying out mixed stirring for 2 hours to obtain mixed slurry.
The spray granulation operation is performed by centrifugal spray granulation.
Adopting a mechanical tablet press and a rectangular die with the size of 22mm x 25mm after sintering to carry out dry pressing forming operation on the spray granulation powder to obtain green blanks, wherein the forming density of the green blanks is 3.2g/cm 3 。
In the sintering step, the green body is placed in a closed sagger for sintering to obtain the ceramic chip, the sintering maximum temperature is 1200 ℃, and the voltage gradient after sintering is 200V/mm.
And (3) sintering the sintered ceramic chip, performing silver electrode sintering, performing pin welding, performing insulation treatment by adopting epoxy resin, and finally performing test evaluation on the voltage dependent resistor such as current capacity, long-term direct current aging reliability and the like.
After the three parameters of the piezoresistor produced according to the scheme are measured by a three-parameter tester, the through-current capacity and the limiting voltage are tested by a discharge current tester with the waveform of 8/20 mu S; as shown in Table 3 (Table 3 shows residual voltage comparison test data, varistor size is 22mm 25 mm), the residual voltage ratio of the varistor manufactured by the scheme (sample No. 1-1 to 1-5) is 1.97-2.01 under the same discharge current of 10KA, and the residual voltage ratio of the conventional varistor (sample No. 2-1 to 2-5) is 2.35-2.46, so that the varistor manufactured by the scheme can obviously reduce the limiting voltage value.
TABLE 3 Table 3
Table 4 shows the long-term dc-aging reliability test results of the piezoresistor manufactured by this scheme, and is specifically as follows:
TABLE 4 Table 4
Under the severe test conditions of applying direct current voltage of 1000V and 125 ℃, the voltage-sensitive voltage change rate range is-3.47% -2.48% after 1000 hours, and the direct current aging characteristic is excellent.
In summary, according to the direct-current low-residual voltage type varistor and the preparation method thereof provided by the invention, by adding the Al element and using Al ions as the donor doping element of the ZnO crystal grains, the resistivity of the ZnO crystal grains can be reduced, so that the residual voltage level of the varistor in a large-current area is reduced; by adding Ag element, the migration of unstable ions in the grain boundary can be effectively inhibited, so that the aging resistance and the through-flow capacity of the direct current load are improved; by adding B, ba and Ca elements, a glass phase can be formed with bismuth oxide, the compactness of a piezoresistor grain boundary is effectively improved, and the phenomenon of initial leakage current increase caused by the addition of Al ions is improved, so that the direct current aging characteristic of the formula is more stable. The manufacturing of the mixed slurry is completed by adopting one-time mixing ball milling, the process is simple and stable, the mixed slurry is subjected to spray granulation operation to obtain spray granulation powder, the spray granulation powder is subjected to dry pressing forming operation to obtain green blanks, the green blanks are subjected to sintering operation to obtain ceramic chips, after silver electrode sintering infiltration operation is carried out on the ceramic chips, pin welding operation is carried out, then epoxy resin is adopted for insulation treatment, and the direct-current low-residual voltage varistor is obtained, and the dry pressing forming operation, the sintering operation and the electrode sintering infiltration operation are all completed by adopting automatic processes, so that the production efficiency is high.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent changes made by the specification and drawings of the present invention, or direct or indirect application in the relevant art, are included in the scope of the present invention.
Claims (8)
1. A direct-current low-residual voltage type piezoresistor is characterized in that the formula components comprise auxiliary materials and ZnO as main components, and the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba and Ca.
2. The direct current low residual voltage type varistor of claim 1, wherein said Al-containing resistor 3+ Is Al (NO) 3 ) 3.9 H 2 O, said Ag-containing + Is AgNO 3 The B-containing 3+ Is H in solution 3 BO 3 The at least one metal element-containing compound is selected from: bi (Bi) 2 O 3 、Sb 2 O 3 、Co 2 O 3 、MnCO 3 、Cr 2 O 3 NiO, baO or Ca 2 CO 3 Any one or more of the following.
3. The direct current low residual voltage type varistor according to claim 2, wherein the molar ratio is: znO: bi (Bi) 2 O 3 ：Sb 2 O 3 ：Co 2 O 3 ：MnCO 3 ：Cr 2 O 3 ：NiO：Al(NO 3 ) 3.9 H 2 O：AgNO 3 ：BaO：CaCO 3 ：H 3 BO 3 ＝(92～98)：(0.75～1.2)：(0.4～1.0)：(0.4～1.0)：(0.4～1.0)：(0.2～0.5)：(0.7～1.4)：(0.01～0.05)：(0.01～0.1)：(0.05～0.2)：(0.05～0.2)：(0.1～0.2)。
4. A method for preparing the direct current low residual voltage type piezoresistor as claimed in claim 1, comprising the following steps:
s1, providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And at least one metal element-containing compound, wherein the metal element is selected from the group consisting of: bi. Sb, co, mn, cr, ni, ba or Ca, and carrying out mixed abrasive operation on the auxiliary materials to obtain mixed slurry;
s2, performing spray granulation operation on the mixed slurry to obtain spray granulation powder;
s3, carrying out dry pressing forming operation on the spray granulation powder to obtain a green body;
s4, sintering the green blanks to obtain ceramic chips;
and S5, performing silver electrode sintering and infiltration operation on the ceramic chip, performing pin welding operation, and performing insulation treatment by using epoxy resin to obtain the direct-current low-residual voltage type piezoresistor.
5. The method for manufacturing a direct current low residual voltage type varistor according to claim 4, wherein the step S1 is specifically:
providing auxiliary materials, wherein the auxiliary materials comprise Al 3+ Is a solution containing Ag + Contains B 3+ And carrying out mixed sand grinding operation on the auxiliary materials, wherein the grinding particle size range is 1.0-2.0 mu m, then adding zinc oxide and deionized water, controlling the solid content to be 50-60%, and then carrying out mixing and stirring for 2h to obtain the mixed slurry.
6. The method according to claim 4, wherein the spray granulation in step S2 is performed by centrifugal spray granulation.
7. The method for manufacturing a direct current low residual voltage type varistor according to claim 4, wherein the step S3 is specifically:
dry-pressing the spray granulation powder by using a mechanical tablet press and a rectangular die with the size of 22mm x 25mm after sintering, so as to obtain a green body, wherein the molding density of the green body is 3.1g/cm 3 ～3.3g/cm 3 。
8. The method for manufacturing a direct current low residual voltage type varistor according to claim 4, wherein the step S4 is specifically as follows:
and placing the green blanks into a closed sagger for sintering to obtain ceramic chips, wherein the sintering maximum temperature is 1060-1300 ℃, and the voltage gradient range after sintering is 150-300V/mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310084410.8A CN116031033A (en) | 2023-01-31 | 2023-01-31 | Direct-current low-residual voltage type piezoresistor and preparation method thereof |
| PCT/CN2023/122292 WO2024159784A1 (en) | 2023-01-31 | 2023-09-27 | Direct-current low-residual-voltage varistor and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310084410.8A CN116031033A (en) | 2023-01-31 | 2023-01-31 | Direct-current low-residual voltage type piezoresistor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116031033A true CN116031033A (en) | 2023-04-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118184334A (en) * | 2024-03-14 | 2024-06-14 | 四川大学 | Preparation method of high-through-flow ZnO varistor pressed sheet |
| WO2024159784A1 (en) * | 2023-01-31 | 2024-08-08 | 厦门赛尔特电子有限公司 | Direct-current low-residual-voltage varistor and preparation method therefor |
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| JPH1012406A (en) * | 1996-06-18 | 1998-01-16 | Marcon Electron Co Ltd | Laminated ceramic varistor |
| CN104150896A (en) * | 2014-08-08 | 2014-11-19 | 汕头高新区松田实业有限公司 | High-through-flow small-sized zinc oxide varistor dielectric material and preparation method thereof |
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| TWI402864B (en) * | 2008-07-11 | 2013-07-21 | Sfi Electronics Technology Inc | A method of making zinc oxide varistor |
| US20130011963A1 (en) * | 2009-07-09 | 2013-01-10 | Sfi Electronics Technology Inc. | Process for producing zinc oxide varistor |
| AU2020102274A4 (en) * | 2020-09-15 | 2020-10-29 | Tsinghua University | Ceramic having high voltage gradient, low residual voltage and low leakage current and preparation method thereof |
| CN115020051A (en) * | 2022-06-24 | 2022-09-06 | 汕头保税区松田电子科技有限公司 | A kind of zinc oxide varistor dielectric material and preparation method thereof |
| CN116031033A (en) * | 2023-01-31 | 2023-04-28 | 厦门赛尔特电子有限公司 | Direct-current low-residual voltage type piezoresistor and preparation method thereof |
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- 2023-01-31 CN CN202310084410.8A patent/CN116031033A/en active Pending
- 2023-09-27 WO PCT/CN2023/122292 patent/WO2024159784A1/en unknown
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| US5039452A (en) * | 1986-10-16 | 1991-08-13 | Raychem Corporation | Metal oxide varistors, precursor powder compositions and methods for preparing same |
| US4996510A (en) * | 1989-12-08 | 1991-02-26 | Raychem Corporation | Metal oxide varistors and methods therefor |
| JPH1012406A (en) * | 1996-06-18 | 1998-01-16 | Marcon Electron Co Ltd | Laminated ceramic varistor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024159784A1 (en) * | 2023-01-31 | 2024-08-08 | 厦门赛尔特电子有限公司 | Direct-current low-residual-voltage varistor and preparation method therefor |
| CN118184334A (en) * | 2024-03-14 | 2024-06-14 | 四川大学 | Preparation method of high-through-flow ZnO varistor pressed sheet |
Also Published As
| Publication number | Publication date |
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| WO2024159784A1 (en) | 2024-08-08 |
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