CN116024524A - Metal plate and deposition mask using same - Google Patents

Abstract

The present invention relates to a metal plate and a deposition mask using the same. A metal plate for manufacturing a deposition mask according to an embodiment has a thickness of 30 μm or less and contains an iron (Fe)-nickel (Ni) alloy metal material containing oxygen (O) and chromium (Cr), wherein the metal material Invar having an atomic concentration of chromium (Cr) of 0.03 atomic % or less, a metal material including an outer part and an inner part excluding the outer part, the outer part including the surface, within a depth range of 14 nm or less from the surface , the outer portion has a maximum atomic concentration of iron (Fe) of 60 atomic % or less, a maximum atomic concentration of nickel (Ni) of 40 atomic % to 45 atomic %, and a maximum atomic concentration of oxygen (O) of 10 atomic % or less atomic concentration.

Description

Metal plate and deposition mask using same

This application is a divisional application of a Chinese patent application entitled "Metal Plate and Deposition Mask Using It" with application number 201880074868.2, which is an international application filed on October 22, 2018 under the Patent Cooperation Treaty ( PCT/KR2018/012486) entered the national phase of the national application in China, and the priority date of the application was November 21, 2017.

technical field

The present invention relates to a metal plate capable of preventing corrosion and having uniform characteristics and a deposition mask using the same.

Background technique

The display device is used by being applied to various devices. For example, display devices are used not only by being applied to small devices such as smartphones and tablet PCs but also by being applied to large devices such as TVs, monitors, and public displays (PDs). In particular, recently, demand for ultra high definition (UHD) of 500 pixels per inch (PPI) or more has increased, and high-resolution display devices have been applied to small and large devices. Therefore, interest in techniques for achieving low power and high resolution is increasing.

Generally used display devices can be roughly classified into liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and the like according to driving methods.

The LCD is a display device driven by using a liquid crystal, and has a structure in which a light source including a cold cathode fluorescent lamp (CCFL), a light emitting diode (LED), and the like is provided at a lower portion of the liquid crystal. The LCD is a display device driven by controlling the amount of light emitted from the light source using liquid crystals disposed on the light source.

In addition, the OLED is a display device driven by using an organic material and does not require a separate light source, the organic material itself can be used as a light source and can be driven with low power consumption. In addition, OLEDs are attracting attention as display devices that can exhibit infinite contrast, have a response speed about 1000 times faster than LCDs, and can replace LCDs with excellent viewing angles.

In particular, an organic material contained in a light emitting layer of an OLED may be deposited on a substrate through a deposition mask called a fine metal mask (FMM), and the deposited organic material may be formed to correspond to the deposition mask formed on the deposition mask. The pattern on the pattern acts as a pixel. In detail, the deposition mask is generally formed of a metal plate including through holes formed at positions corresponding to patterns of pixels. In this case, organic materials such as red, green, blue can be deposited on the substrate through the through holes of the metal plate as shown in FIG. 5, and pixel patterns can be formed on the substrate.

Typically, a deposition mask can be fabricated from a metal plate made of an alloy of iron (Fe) and nickel (Ni). For example, the deposition mask may be made of Invar alloy. Although it is advantageous to immediately fabricate the deposition mask from the fabricated metal plate, there are reasons for practical difficulties. For example, since the manufacturing process of the metal plate and the manufacturing process of the deposition mask may be performed in different areas, when the metal plate is manufactured and then transferred to the area where the deposition mask is manufactured, the metal plate may be exposed to air for a long time. Or, even when transferring the metal plates, it is difficult to put all the metal plates into the deposition mask manufacturing process at the same time, and when they are placed sequentially, there should be metal plates that will be stored for a long time. Separate storage methods can be considered, but prohibitive costs can be expected.

Therefore, the metal plate may also contain chromium (Cr) in addition to iron (Fe) and nickel (Ni) to prevent surface corrosion. Chromium (Cr) is an element that can ensure corrosion resistance, and a metal plate can have improved corrosion resistance due to chromium (Cr), but there is chromium (Cr) in the composition used to manufacture the metal plate that is difficult to uniformly disperse or distribution problem.

In addition, when chromium (Cr) is unevenly dispersed or distributed and concentrated in a specific portion, it promotes the formation of segregation and secondary precipitation etc. during the process of manufacturing the metal plate, and thus the physical properties of the metal plate may change. Therefore, the corrosion resistance and workability of the metal plate are lowered, and there is a problem that defects occur during the manufacture of a high-resolution deposition mask using the metal plate. Specifically, when a deposition mask is manufactured using a metal plate, there is a problem that the workability of forming grooves on one surface and the other surface of the metal plate deteriorates due to the above-mentioned problems.

Therefore, there is a need for a metal plate and a deposition mask using the same that can solve the above-mentioned problems.

Contents of the invention

technical problem

One embodiment is directed to providing a metal sheet with improved corrosion resistance. Furthermore, embodiments are directed to providing a deposition mask that can prevent corrosion in the process of manufacturing the deposition mask from a metal plate having improved corrosion resistance and in the process of forming a pattern using the deposition mask.

Furthermore, one embodiment is directed to providing a metal plate and a deposition mask capable of preventing corrosion that occurs during the process of transferring and storing the metal plate before manufacturing the deposition mask. That is, the embodiments relate to providing a metal plate and a deposition mask capable of preventing an etching unevenness phenomenon that may occur due to corrosion and achieving high resolution.

In addition, one embodiment is directed to providing a metal plate having improved processability because it can have uniform characteristics by minimizing the content of chromium (Cr), and a deposition mask using the same.

Technical solutions

A metal plate for manufacturing mask deposition according to an embodiment includes an iron (Fe)-nickel (Ni) alloy metal material having a thickness of 30 μm or less and Containing oxygen (O) and chromium (Cr), wherein the metallic material is invar having an atomic concentration of chromium (Cr) of 0.03 at% or less, the metallic material includes an outer part and an inner part other than the outer part, said The outer portion includes a surface, wherein the outer portion has a maximum atomic concentration of iron (Fe) of 60 atomic % or less, nickel (Ni) of 40 atomic % to 45 atomic % within a depth range of 14 nm or less from the surface The maximum atomic concentration and the minimum atomic concentration of oxygen (O) of 10 atomic % or less.

In addition, a deposition mask according to an embodiment includes an iron (Fe)-nickel (Ni) alloy metal material including a deposition area and a non-deposition area other than the deposition area. area, wherein the deposition area includes a plurality of effective parts spaced apart in the longitudinal direction and non-effective parts except the effective part, wherein the effective part includes: a plurality of small surface holes formed on one surface of the metal material; formed on A plurality of large surface holes on the opposite surface of the one surface of the metal material; a plurality of through holes communicating with the small surface holes and the large surface holes respectively; and island portions (islands) formed between adjacent through holes portion), wherein the resolution of the through hole is 400PPI or greater, the metal material contains iron (Fe), nickel (Ni), oxygen (O) and chromium (Cr), and the atomic concentration of the metal material is chromium (Cr) is 0.03 at% or less Invar, the metallic material includes an outer portion and an inner portion other than the outer portion, the outer portion including the surface, within a distance from at least one of the non-deposition area, the non-effective portion, and the island portion Within a depth of 14 nm or less from the surface, the maximum atomic concentration of iron (Fe) is 60 atomic % or less, the maximum atomic concentration of nickel (Ni) is 40 atomic % to 45 atomic %, and the minimum atomic concentration of oxygen (O) The concentration is 10 atomic % or less.

Beneficial effect

A metal plate according to an embodiment may have improved corrosion resistance. In detail, the metal plate may improve corrosion resistance of the metal plate by increasing nickel (Ni) content on the surface of the metal plate, thereby preventing corrosion of the metal plate. Therefore, the corrosion resistance of a deposition mask made of a metal plate can be improved.

In addition, the metal plate according to the embodiment may contain chromium (Cr) at an atomic concentration of 0.03 atomic % or less. That is, the content of chromium (Cr) contained in the metal plate 10 can be minimized. In detail, since the metal plate contains a very small amount of chromium (Cr), the chromium (Cr) can be uniformly dispersed during the manufacturing process of the metal plate, and the formation of segregation and secondary precipitation on the metal plate can be prevented. Therefore, the metal sheet can have uniform characteristics and improve workability. Therefore, small surface holes and large surface holes formed at one surface and the other surface of the metal plate can be uniformly formed, and through holes formed of the small surface holes and large surface holes can be formed more accurately and uniformly.

Accordingly, the deposition mask according to the embodiment may uniformly deposit OLED pixel patterns having a resolution of 400PPI or more, a high resolution of 500PPI or more, and an ultra-high resolution of 800PPI or more.

Description of drawings

FIG. 1 is a diagram showing a cross-sectional view of a metal plate according to an embodiment.

2 to 4 are diagrams illustrating a compositional diagram of a metal plate according to an embodiment.

5 to 7 are conceptual diagrams describing a process of depositing an organic material on a substrate using a deposition mask according to one embodiment.

FIG. 8 is a diagram illustrating a plan view of a deposition mask according to one embodiment.

FIG. 9 is a diagram illustrating a plan view of an effective portion of a deposition mask according to one embodiment.

FIG. 10 is a microscope image of an active portion of a deposition mask according to one embodiment, viewed from a plan view.

FIG. 11 is a diagram illustrating another plan view of a deposition mask according to an embodiment.

FIG. 12 is a diagram in which a cross-sectional view taken along line AA′ and a cross-sectional view taken along line BB′ in FIG. 9 or 10 are superimposed.

FIG. 13 is a diagram illustrating a cross-sectional view taken along line BB′ in FIG. 9 or 10 .

FIG. 14 is a diagram illustrating a manufacturing process of a deposition mask according to one embodiment.

15 and 16 are diagrams illustrating deposition patterns formed through a deposition mask according to an embodiment.

Detailed ways

Hereinafter, configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the following description referring to the drawings, the same elements are denoted by the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted. The terms "first", "second", etc. may be used to describe various elements, but the elements should not be limited by these terms. These terms are only used to distinguish one element from another.

Furthermore, in the description of the embodiments, it will be understood that a layer (or film), region, pattern or structure is referred to as being "on/over" or "on" another layer (or film), region, pad or pattern. "Under" includes both meanings of "directly" and "by inserting another layer (indirectly)". In addition, references to 'on/over' or 'under' each layer will be described with reference to the drawings.

Also, when one part is said to be "connected" to another part, this includes being "directly connected" as well as "indirectly connected" with another member therebetween. Also, when an element is said to "comprise" other elements, it means that it may include other elements, not exclude other elements, unless otherwise specified.

Hereinafter, a metal plate according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a diagram showing a cross-sectional view of a metal plate according to an embodiment.

Referring to FIG. 1 , a metal plate 10 according to one embodiment may include a metal material. For example, the metal plate 10 may contain nickel (Ni) alloy. In detail, the metal plate 10 may contain an alloy of iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may contain iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). For example, metal plate 10 may include iron at about 60% to about 65% by weight, and nickel may be included at about 35% to about 40% by weight. The composition, content and weight % of the metal plate 10 can be determined using the following method: By selecting a specific area a*b on the plane of the metal plate 10 to check the weight % of each component, corresponding to the thickness t of the metal plate 10 The test sample (a*b*t) is sampled and dissolved in strong acid or the like, but the embodiment is not limited thereto.

In detail, the metal plate 10 may include about 63.5% by weight to about 64.5% by weight of iron, and may include about 35.5% by weight to about 36.5% by weight of nickel. In addition, the metal plate 10 may also contain at least one of the following elements: a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co) , Copper (Cu), Silver (Ag), Vanadium (V), Niobium (Nb), Indium (In), Antimony (Sb). Here, a small amount may mean not more than 1% by weight. That is, the metal plate 10 may contain Invar. Invar is an alloy containing iron and nickel and is a low thermal expansion alloy with a coefficient of thermal expansion close to zero. Since Invar has a very small coefficient of thermal expansion, it is used in precision parts such as masks and precision equipment. Accordingly, a deposition mask fabricated using the metal plate 10 may have improved reliability, thereby preventing deformation and increasing lifetime.

The metal plate 10 including the alloy of iron and nickel as described above can be produced by cold rolling. In detail, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling, and secondary annealing processes, and may be formed through the above process or another thickness reduction process A thickness of 30 μm or less. Furthermore, during the process of manufacturing the metal plate 10, the atomic concentration of the surface of the metal plate 10 may change. In detail, the metal plate 10 may include an outer portion SP and an inner portion IP other than the outer portion SP, the outer portion SP including a surface, and the atomic concentration of the outer portion SP of the metal plate 10 may be the same as that of the inner portion IP of the metal plate 10. different atomic concentrations.

The metal plate 10 may have a quadrangular shape. In detail, the metal plate 10 may have a rectangular shape having a major axis and a minor axis, and may have a thickness of about 30 μm or less.

The metal plate 10 may contain iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr), and the atomic concentration of chromium (Cr) may be about 0.03 atomic % or less relative to the entire metal plate 10 .

Furthermore, the atomic concentration of the outer portion SP of the metal plate 10 may be different from the atomic concentration of the inner portion IP of the metal plate 10 . Here, the outer portion SP may refer to a depth range of about 30 nm or less from each of the one surface and the other surface of the metal plate 10 . In detail, the outer portion SP may refer to a depth range of about 25 nm or less from the surface of the metal plate 10 . Also, the inner portion IP may refer to a range of depths from the surface of the metal plate 10 exceeding the above range. In detail, the inner portion IP may refer to a depth range exceeding 30 nm from the surface of the metal plate 10 .

The types and atomic concentrations of elements contained in the metal plate 10 can be determined by X-ray photoelectron spectroscopy (XPS). XPS is a type of electron spectroscopy, and can analyze elements by using X-rays as a light source. In detail, when X-rays are irradiated on the metal plate, photoelectrons are emitted to the outside of the material, and since their kinetic energy reflects the magnitude of the binding energy at the original positions of the atoms constituting the material, the composition and binding state of the material can be known. In the embodiment, the elements of the metal plate 10 are measured using an XPS instrument (manufactured by ULVAL-PHI Inc.), where the incident angle of X-rays is 90 degrees and the blowing angle of photoelectrons is 40 degrees. In addition, the energy source of X-rays used was monochromatic Al-Kα (hv=1486.6eV), and the 100 μmФ region of the sample metal plate was measured under the X-ray output of 15 kV and 1.6 mA.

2 to 4 are graphs showing XPS charts of ratios of atomic concentrations of respective elements of a metal plate according to one embodiment. Referring to FIGS. 2 to 4 , the atomic concentration of the outer portion SP of the metal plate 10 according to an embodiment may be known. At this time, in the graphs shown in each figure, the X-axis indicates time (minutes), and the Y-axis indicates atomic concentration (atomic %). In addition, two samples of the same size were prepared by processing random areas of the metal plate for measurement, and each sample was prepared to have a width of 1 cm and a length of 1 cm. In addition, the measurement was performed under constant temperature and humidity conditions of a temperature of about 25° C. and a humidity of about 40% to about 50%, and the measurement results of the first sample measured are shown by a solid line, and the measurement results of the second sample are shown by a dotted line.

In the graphs of FIGS. 2 to 4 , the 0.6 minute (Min) region may refer to a result measured at a depth point of about 3 nm to about 4 nm from the surface of the metal plate 10 , more specifically, a depth point of about 3.6 nm. Also, in the drawing, the 1.5 minute (Min) region may refer to a result measured at a depth point of about 8 nm to about 10 nm from the surface of the metal plate 10 , more specifically, a depth point of about 9 nm. That is, when sputtering is performed on the metal plate 10 for 0.1 minutes (Min), the composition at a depth point of about 0.6 nm from the surface of the metal plate 10 can be measured. In the case of XPS, since the concentration of atoms within a depth range of about 5 nm from a measurement point can be measured, the result of measuring a specific point can be interpreted as measuring the composition within a depth range of about 5 nm from a specific point. For example, a sputtering time of 0.6 minutes may mean sputtering the surface of the metal plate 10 for 0.6 minutes, and may mean measuring the concentration of atoms contained within a depth range of about 1 nm to about 7 nm from the surface. In detail, the sputtering time of 0.6 minutes may refer to measuring the concentration of atoms contained in a depth of about 3.6 nm to about 8.6 nm, which range is from the sputtering end point to about 5 nm after sputtering from the surface to a depth of 3.6 nm. A deeper range. When XPS is used during sputtering, the composition and atomic concentration at a specific depth from the surface can be grasped. Therefore, the specific atomic concentration and its maximum concentration in the range from the surface to a specific depth can be grasped, and the increase/decrease trend of the specific atomic concentration can be grasped. In addition, for each atomic concentration, the maximum atomic concentration in the content to be described later may refer to the maximum value among values measured using XPS.

Referring to FIG. 2 , the atomic concentration of iron contained in the outer portion SP of the metal plate 10 may be different from the maximum atomic concentration of iron contained in the inner portion IP of the metal plate 10 . For example, the maximum atomic concentration of iron in the outer portion SP of the metal plate 10 may be about 65 atomic % or less. In detail, within a depth range of about 14 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be about 60 atomic % or less. In addition, within a depth range of about 12 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be about 60 atomic % or less. In addition, within a depth range of about 10 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be about 60 atomic % or less. In addition, within a depth range of about 8 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be 60 atomic % or less. In addition, within a depth range of about 6 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be 60 atomic % or less. In detail, when sputtering is performed for a time of 0.3 minutes to 1.5 minutes, and a deeper point within a range of about 5 nm or less from the sputtering end point is measured, the maximum atomic concentration of iron may be about 60 atomic % or less.

In addition, within a depth range of about 14 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be about 50 atomic % to about 60 atomic %. In detail, the maximum atomic concentration of iron measured after sputtering for 0.3 minutes to 1.5 minutes may be about 50 atomic % to about 60 atomic %.

In addition, within a depth range of about 7 nm or less from the surface of the metal plate 10, the maximum atomic concentration of iron may be about 50 atomic % or less. In detail, within a depth range of about 6.8 nm or less from the surface, the maximum atomic concentration of iron may be about 50 atomic % or less. For example, when sputtering is performed for 0.3 minutes, sputtering can be performed from the surface of the metal plate 10 to a depth of about 1.8 nm, and when a deeper point of about 5 nm or less from the sputtering end point is measured, the maximum atomic concentration of iron can be is about 50 atomic % or less.

Furthermore, the maximum atomic concentration of iron in the outer portion SP of the metal plate 10 may increase more as the sputtering time increases, for example, as the depth of the measurement point becomes deeper after sputtering. That is, the concentration may gradually increase as the distance from the surface of the metal plate 10 increases.

Referring to FIG. 3 , the atomic concentration of nickel contained in the outer portion SP of the metal plate 10 may be different from the atomic concentration of nickel contained in the inner portion IP of the metal plate 10 . In detail, the maximum atomic concentration of nickel contained in the outer part SP and the inner part IP may be different from each other. For example, the maximum atomic concentration of nickel in the outer portion SP of the metal plate 10 may be about 45 atomic % or less, and the maximum atomic concentration of nickel in the inner portion IP may be less than the above range. In detail, in the outer portion SP of the metal plate 10, within a depth range of about 14 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 45 atomic % or less. In addition, the maximum atomic concentration of nickel may be about 45 atomic % or less within a depth range of about 12 nm or less from the surface. In addition, the maximum atomic concentration of nickel may be about 45 atomic % or less within a depth range of about 10 nm or less from the surface. In addition, the maximum atomic concentration of nickel may be about 45 atomic % or less within a depth range of about 8 nm or less from the surface. In addition, the maximum atomic concentration of nickel may be about 40 atomic % or less within a depth range of about 6 nm or less from the surface. That is, when sputtering is performed for 0.6 minutes to 1.5 minutes and a deeper point within a range of about 5 nm or less from the reference of the sputtering end point is measured, the maximum atomic concentration of nickel may be about 45 atomic % or less.

In detail, within a depth range of about 14 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 40 atomic % to about 45 atomic %. In addition, within a depth range of about 12 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 40 atomic % to about 45 atomic %. In addition, within a depth range of about 10 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 40 atomic % to about 45 atomic %. In addition, within a depth range of about 8 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 40 atomic % to about 45 atomic %.

In more detail, within a depth range of about 14 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 42 atomic % to about 44 atomic %. In addition, within a depth range of about 12 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 42 atomic % to about 44 atomic %. In addition, the maximum atomic concentration of nickel may be from about 42 atomic percent to about 44 atomic percent within a depth range of about 10 nm or less from the surface. In addition, within a depth range of about 8 nm or less from the surface of the metal plate 10, the maximum atomic concentration of nickel may be about 42 atomic % to about 44 atomic %.

As an example, when the inner portion IP of the metal plate 10 includes about 35.5 wt% to about 36.5 wt% nickel, the maximum atomic concentration of nickel in the outer portion SP of the metal plate 10 may be about 40 atomic % to about 45 atomic %. Preferably, the maximum atomic concentration of nickel in the outer portion SP of the metal plate 10 may be about 42 atomic % to about 44 atomic %.

Therefore, when increasing the atomic concentration of nickel on the surface of the metal plate 10, when increasing the maximum atomic concentration of nickel to about 40 atomic % to about 45 atomic %, preferably, about 42 atomic % to about 44 atomic %, Rust generated on the surface of the metal plate 10 can be effectively suppressed.

In addition, the maximum atomic concentration of nickel may be about 45 atomic % or less within a depth range of about 1 nm to about 14 nm from the surface of the metal plate 10 . In more detail, the atomic concentration of nickel may be about 40 atomic % to about 45 atomic % within a depth range of about 1.5 nm to about 14 nm from the surface of the metal plate 10 . Preferably, the atomic concentration of nickel may be about 42 atomic % to about 44 atomic % within a depth range of about 3 nm to about 14 nm from the surface of the metal plate 10 .

In addition, the maximum value of the atomic concentration of nickel contained within a depth range of about 9 nm or less from the surface may be greater than the maximum value of the atomic concentration of nickel contained within a depth range of approximately 7 nm or less from the surface. In detail, the maximum value of the atomic concentration of nickel contained within a depth range of about 8.6 nm or less from the surface may be greater than the maximum value of the atomic concentration of nickel contained within a depth range of approximately 6.8 nm or less from the surface. For example, the maximum value of the atomic concentration of nickel measured based on the point where sputtering was performed for 0.6 minutes may be greater than the maximum value of the atomic concentration of nickel measured based on the point where sputtering was performed for 0.3 minutes. In detail, the maximum value of the atomic concentration of nickel in the depth range of about 3.6 nm to about 8.6 nm from the surface based on the point measurement at which sputtering was performed for 0.6 minutes may be greater than that at a distance from the surface based on the point measurement at which sputtering was performed for 0.3 minutes. The maximum value of the atomic concentration of nickel in the depth range of about 1.8 nm to about 6.8 nm. Furthermore, when sputtering is performed for 0.3 minutes to 1.5 minutes to measure the atomic concentration of the outer portion SP, in the surface region SP, the value of the atomic concentration of nickel measured after performing sputtering for 0.6 minutes may have a maximum value. In addition, the atomic concentration of nickel contained in the outer portion SP may have a maximum value within a depth range of about 3 nm to about 9 nm from the surface. In detail, it may have a maximum value within a depth range of about 3.6 nm to about 8.6 nm from the surface.

Referring to FIG. 4 , the atomic concentration of oxygen contained in the outer portion SP of the metal plate 10 may be different from the atomic concentration of oxygen contained in the inner portion IP of the metal plate 10 . For example, the minimum atomic concentration of oxygen in the outer portion SP of the metal plate 10 may be about 5 atomic % or less.

In detail, in the outer portion SP of the metal plate 10, within a depth range of about 23 nm or less from the surface of the metal plate 10, the minimum atomic concentration of oxygen may be about 10 atomic % or less, at about 14 nm or less At small depths, the minimum atomic concentration of oxygen may be about 10 atomic percent or less. In addition, the minimum atomic concentration of oxygen may be about 10 atomic % or less in a depth range of about 12 nm or less. In addition, the minimum atomic concentration of oxygen may be about 10 atomic % or less in a depth range of about 10 nm or less. In addition, the minimum atomic concentration of oxygen may be about 10 atomic % or less in a depth range of about 8 nm or less.

In more detail, the minimum atomic concentration of oxygen may be about 5 atomic % or less within a depth range of about 14 nm or less from the surface of the metal plate 10 . In addition, the minimum atomic concentration of oxygen may be about 5 atomic % or less within a depth range of about 12 nm or less from the surface. In addition, the minimum atomic concentration of oxygen may be about 5 atomic % or less within a depth range of about 10 nm or less from the surface.

In addition, the minimum value of the atomic concentration of oxygen contained within a depth range of about 7 nm or less from the surface may be greater than the minimum value of the atomic concentration of oxygen contained within a depth range of approximately 9 nm or less from the surface. In detail, the minimum value of the atomic concentration of oxygen contained within a depth range of about 6.8 nm or less from the surface may be greater than the minimum value of the atomic concentration of oxygen contained within a depth range of approximately 8.6 nm or less from the surface. For example, the minimum value of the atomic concentration of oxygen measured based on the point where sputtering was performed for 0.3 minutes may be greater than the minimum value of the atomic concentration of oxygen measured based on the point where sputtering was performed for 0.6 minutes. In detail, the minimum value of the atomic concentration of oxygen in the depth range of about 1.8 nm to about 6.8 nm from the surface based on the point measurement at which sputtering was performed for 0.3 minutes may be greater than that at a distance from the surface based on the point measurement at which sputtering was performed for 0.6 minutes. The minimum value of the atomic concentration of oxygen in the depth range from about 3.6 nm to about 8.6 nm. In addition, the minimum value of the atomic concentration of oxygen measured based on the point at which sputtering was performed for 0.6 minutes may be greater than the minimum value of the atomic concentration of oxygen measured based on the point at which sputtering was performed for 0.9 minutes. In detail, the minimum value of the atomic concentration of oxygen in the depth range of about 3.6 nm to about 8.6 nm from the surface based on the point measurement at which sputtering was performed for 0.6 minutes may be greater than that at a distance from the surface based on the point measurement at which sputtering was performed for 0.9 minutes. The minimum value of the atomic concentration of oxygen in the depth range from about 5.4 nm to about 10.4 nm.

That is, the metal plate 10 according to the embodiment may change the atomic concentration of the surface in the process of manufacturing the metal plate 10 . In detail, the atomic concentration of the surface of the metal plate 10 can be controlled through the above-mentioned annealing process.

As an example, the annealing process may be performed on the metal plate 10 at a temperature of about 550° C. to about 650° C. for about 45 seconds to about 75 seconds. Preferably, the annealing process may be performed on the metal plate 10 at a temperature of about 600° C. for about 60 seconds.

The annealing process can be performed in an inert gas atmosphere. For example, the annealing process may be performed in an inert gas atmosphere such as helium, nitrogen, and argon. Here, the atmosphere may refer to an atmosphere in which 90% or more of inert gas exists.

Atoms on the surface of the metal plate 10 may rearrange through the annealing process. In detail, the atomic concentration of iron, nickel, oxygen, etc. on the surface of the metal plate 10 can be changed by the annealing process, and an oxide film can be formed on the surface to prevent corrosion and corrosion progress in advance.

That is, the inner portion IP of the metal plate 10 according to the embodiment may include about 60 wt % to about 65 wt % iron and about 35 wt % to about 40 wt % nickel. In detail, the inner portion IP of the metal plate 10 may include about 63.5 wt% to about 64.5 wt% iron and about 35.5 wt% to about 36.5 wt% nickel.

In addition, the outer portion SP of the metal plate 10, for example, a region in a depth range of about 30 nm or less from the surface of the metal plate 10 may have a higher atomic concentration of nickel than that of the inner portion IP of the metal plate 10. . In particular, the atomic concentration of nickel may have a maximum value within a depth range of about 10 nm or less from the surface. In detail, the atomic concentration of nickel may have a maximum value in a depth range of about 8.6 nm or less from the surface. In addition, the metal plate 10 may have an atomic concentration of oxygen of about 10 atomic % or less in a region of a depth range of about 10 nm or less from the surface.

Accordingly, the metal plate 10 may have improved corrosion resistance, thereby effectively preventing corrosion due to external environments. In detail, since the atomic concentration of oxygen at the surface of the metal plate 10 is low, the thickness of an oxide film formed on the surface can be minimized, and since the atomic concentration of nickel at the surface is high, it can have improved corrosion resistance.

That is, when the deposition mask 100 to be described later is manufactured by using the metal plate 10, corrosion can be prevented during transportation and storage of the metal plate 10 when it is repeatedly used to form When forming a pixel pattern, the deposition mask 100 can be prevented from being corroded.

In addition, the metal plate 10 can minimize the content of chromium. In detail, the atomic concentration of chromium may be contained at about 0.03 atomic % or less with respect to the entire metal plate 10 . In more detail, chromium in Invar may be contained at about 0.03 atomic % or less. Chromium is an element that can improve the corrosion resistance of the metal plate 10 . However, chromium has a problem of being difficult to uniformly disperse or distribute into the composition used to manufacture the metal plate 10 . In addition, when it is not uniformly dispersed or distributed in the composition, segregation and secondary precipitation may be formed to change the physical properties of the metal plate 10 .

Therefore, the metal plate 10 according to the embodiment can realize uniform characteristics by minimizing the content of chromium. Therefore, when manufacturing a deposition mask 100 to be described later, the metal plate 10 may be processed to improve workability. In detail, in the manufacturing process of the deposition mask 100 for forming the small surface hole V1 and the large surface hole V2 at each of the one surface and the other surface of the metal plate 10, the small surface hole V1 and the large surface hole V1 The face V2 can be formed uniformly, and the through holes TH formed by the small face V1 and the large face V2 can be formed more accurately and uniformly.

5 to 7 are conceptual diagrams describing a process of depositing an organic material on a substrate 300 using a deposition mask 100 according to an embodiment.

5 is a diagram illustrating an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and FIG. 6 is a diagram illustrating pulling the deposition mask 100 according to an embodiment to be placed on a mask frame 200 . In addition, FIG. 7 is a diagram illustrating that a plurality of deposition patterns are formed on a substrate 300 through a plurality of through holes of the deposition mask 100 .

Referring to FIGS. 5 to 7 , an organic material deposition apparatus may include a deposition mask 100 , a mask frame 200 , a substrate 300 , an organic material deposition container 400 and a vacuum chamber 500 .

The deposition mask 100 may be made of the metal plate 10 described above. The deposition mask 100 may include a plurality of through holes TH at effective portions for deposition. The deposition mask 100 may be a substrate for a deposition mask including a plurality of through holes TH. In this case, the via hole may be formed to correspond to a pattern to be formed on the substrate. The deposition mask 100 may include an inactive portion other than an active portion including a deposition area.

The mask frame 200 may include openings. A plurality of through holes of the deposition mask 100 may be disposed on regions corresponding to the openings. Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300 . The deposition mask 100 may be set and fixed on the mask frame 200 . For example, the deposition mask 100 may be pulled and fixed on the mask frame 200 by welding.

At the end of the deposition mask 100 disposed on the outermost, the deposition mask 100 may be pulled in the opposite direction. In the deposition mask 100 , one end of the deposition mask 100 and the other end opposite to the one end may be pulled in opposite directions in the longitudinal direction of the deposition mask 100 . One end and the other end of the deposition mask 100 may face away from each other and be disposed in parallel. One end of the deposition mask 100 may be one of ends forming four side surfaces disposed on the outermost portion of the deposition mask 100 . For example, the deposition mask 100 may be pulled with a force of 0.4kgf to 1.5kgf. Accordingly, the pulled deposition mask 100 may be placed on the mask frame 200 .

Then, the deposition mask 100 may be fixed to the mask frame 200 by soldering the non-active portion of the deposition mask 100 . Subsequently, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by a method such as cutting.

The substrate 300 may be a substrate for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing organic materials for OLED pixel patterns. Organic material patterns of red (R), green (G), and blue (B) may be formed on the substrate 300 to form pixels that are three primary colors of light. That is, RGB patterns may be formed on the substrate 300 . Although not shown in the drawings, a white (W) organic material pattern may be formed on the substrate 300 in addition to red (R), green (G) and blue (B) organic material patterns. That is, a WRGB pattern may be formed on the substrate 300 .

The organic material deposition container 400 may be a crucible. Organic material may be disposed inside the crucible.

When a heat source and/or electric current is supplied to the crucible in the vacuum chamber 500 , an organic material may be deposited on the substrate 100 .

Referring to FIG. 7 , a deposition mask 100 may include one surface 101 and another surface 102 opposite to the one surface.

One surface 101 of the deposition mask 100 may include small surface holes V1, and the other surface 102 may include large surface holes V2. The through holes TH may communicate through a communication portion CA to which boundaries of the small surface hole V1 and the large surface hole V2 are connected.

The deposition mask 100 may include a first etch surface ES1 in the small surface hole V1. The deposition mask 100 may include a second etch surface ES2 in the large surface hole V2. The through hole TH may be formed by communicating the first etched surface ES1 in the small surface hole V1 with the second etched surface ES2 in the large surface hole V2. For example, a first etched surface ES1 in a small surface hole V1 may communicate with a second etched surface ES2 in a large surface hole V2 to form a through hole.

The width of the large surface hole V2 may be greater than the width of the small surface hole V1. At this time, the width of the small surface hole V1 can be measured at one surface 101 , and the width of the large surface hole V2 can be measured at the other surface 102 .

The small surface hole V1 may be disposed toward the substrate 300 . The small surface hole V1 may be disposed close to the substrate 300 . Accordingly, the small surface hole V1 may have a shape corresponding to the deposition material (ie, the deposition pattern DP).

The large surface hole V2 may be disposed toward the organic material deposition container 400 . Therefore, the large surface hole V2 can accommodate the organic material supplied from the organic material deposition container 400 with a wide width, and can quickly form a fine surface hole V1 on the substrate 300 through the small surface hole V1 having a width smaller than that of the large surface hole V2. pattern.

FIG. 8 is a diagram illustrating a plan view of a deposition mask 100 according to an embodiment. Referring to FIG. 8 , a deposition mask 100 according to an embodiment may include a deposition pattern area DA and a non-deposition area NDA.

The deposition area DA may be an area for forming deposition patterns. The deposition area DA may include a pattern area and a non-pattern area. The pattern area may be an area including the small face V1, the large face V2, the through hole TH, and the island portion IS, and the non-pattern area may be an area not including the small face V1, the large face V2, the through hole TH, and the island portion IS.

In addition, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions AA1, AA2, and AA3 capable of forming a plurality of deposition patterns.

The plurality of active portions AA1, AA2, and AA3 may include a first active portion AA1, a second active portion AA2, and a third active portion AA3. One deposition area DA may be any one of the first active portion AA1, the second active portion AA2, and the third active portion AA3.

In the case of a small-sized display device such as a smartphone, an effective portion of any one of a plurality of deposition regions included in the deposition mask 100 may be an effective portion for forming one display device. Therefore, one deposition mask 100 may include a plurality of active portions to simultaneously form a plurality of display devices. Therefore, the deposition mask 100 according to one embodiment may improve process efficiency.

Alternatively, in the case of a large-sized display device such as a television, a plurality of effective portions included in one deposition mask 100 may be a portion for forming one display device. In this case, a plurality of effective portions can be used to prevent deformation due to the load of the mask.

The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100 . Isolation areas IA1 and IA2 may be disposed between adjacent active parts. The isolation areas IA1 and IA2 may be interval areas between active parts. For example, the first isolation area IA1 may be disposed between the first active portion AA1 and the second active portion AA2. In addition, the second isolation area IA2 may be disposed between the second active portion AA2 and the third active portion AA3. That is, the isolation areas IA1 and IA2 may distinguish adjacent active areas, and one deposition mask 100 may support a plurality of active parts.

The deposition mask 100 may include a non-deposition area NDA on both side portions in the longitudinal direction of the deposition area DA. The deposition mask 100 according to one embodiment may include non-deposition areas NDA on both sides in the horizontal direction of the deposition area DA.

The non-deposition area NDA of the deposition mask 100 may be an area not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing to the mask frame 200 . For example, the non-deposition area NDA of the deposition mask 100 may include a first frame fixing area FA1 on one side of the deposition area DA, and may include a first frame fixing area FA1 on the other side of the deposition area DA opposite to the one side. Second frame fixing area FA2. The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. In this case, a surface treatment layer different in material from the metal plate 10 may be formed in the deposition area DA of the deposition mask 100, and the surface treatment layer may not be formed in the non-deposition area NDA. Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed only on any one of one surface 101 of the deposition mask 100 and the other surface 102 opposite to the one surface 101 . Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed on only a portion of one surface 101 of the deposition mask 100 . For example, one surface and/or the other surface of the deposition mask 100, and the whole and/or a part of the deposition mask 100 may include a surface treatment layer having an etching rate lower than that of the material of the metal plate 10, thereby Increase etch factor. Therefore, the deposition mask 100 of one embodiment can efficiently form via holes having a fine size. As an example, the resolution of the deposition mask 100 of an embodiment may be 400 PPI or greater. Specifically, the deposition mask 100 can efficiently form a deposition pattern having a high resolution of 500PPI or more. Here, the surface treatment layer may contain a material different from that of the metal plate 10, or may contain a metal material having a different composition of the same element. In this regard, it will be described in more detail in a manufacturing process of a deposition mask described later.

The non-deposition area NDA may include half-etched portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etched portion HF1 on one side of the deposition area DA, and may include a first half-etched portion HF1 on the other side of the deposition area DA opposite to the one side. The second half etches part HF2. The first half-etched part HF1 and the second half-etched part HF2 may be regions in which grooves are formed in the depth direction of the deposition mask 100 . The first half-etched part HF1 and the second half-etched part HF2 may have grooves having a thickness of about 1/2 of the deposition mask so as to distribute stress when the deposition mask 100 is pulled. In addition, preferably, the half-etched portions HF1 and HF2 are formed symmetrically with respect to the center of the deposition mask 100 in the X-axis direction or the Y-axis direction. Therefore, the pulling force in both directions can be controlled uniformly.

The half-etched portions HF1 and HF2 may be formed in various shapes. The half-etched parts HF1 and HF2 may include semicircular groove parts. Grooves may be formed on at least one of one surface 101 and the other surface 102 opposite to the one surface 101 of the deposition mask 100 . Preferably, the half-etched portions HF1 and HF2 may be formed on the surface corresponding to the small surface hole V1. Therefore, the half-etched portions HF1 and HF2 can be formed simultaneously with the small surface hole V1, thereby improving process efficiency. In addition, the half-etched portions HF1 and HF2 can disperse the stress that may arise due to the size difference between the large surface holes V2. However, the embodiment is not limited thereto, and the half-etched parts HF1 and HF2 may have a quadrangular shape. For example, the half-etched portion HF1 and the second half-etched portion HF2 may have a rectangular or square shape. Therefore, the deposition mask 100 can effectively disperse stress.

Also, the half-etched portions HF1 and HF2 may include curved surfaces and flat surfaces. A flat surface of the first half-etched portion HF1 may be disposed adjacent to the first active area AA1 , and the flat surface may be disposed horizontally with one end of the deposition mask 100 in the longitudinal direction. The curved surface of the first half-etched part HF1 may have a convex shape toward one end in the longitudinal direction of the deposition mask 100 . For example, the curved surface of the first half-etched portion HF1 may be formed such that a point of ½ of the length of the deposition mask 100 in the vertical direction corresponds to a radius of a semicircle.

In addition, a flat surface of the second half-etched part HF2 may be disposed adjacent to the third active area AA3 , and the flat surface may be disposed horizontally with one end of the deposition mask 100 in the longitudinal direction. The curved surface of the second half-etched part HF2 may have a convex shape toward the other end in the longitudinal direction of the deposition mask 100 . For example, the curved surface of the second half-etched part HF2 may be formed such that a 1/2 point of the length of the deposition mask 100 in the vertical direction corresponds to a radius of a semicircle.

The half-etched portions HF1 and HF2 may be formed simultaneously when forming the small face V1 or the large face V2. Therefore, process efficiency can be improved. In addition, grooves formed on one surface 101 and the other surface 102 of the deposition mask 100 may be formed offset from each other. Therefore, the half-etched portions HF1 and HF2 may not pass through.

In addition, the deposition mask 100 according to the embodiment may include four half-etched parts. For example, the half-etched portions HF1 and HF2 may include an even number of half-etched portions HF1 and HF2 to more effectively disperse stress.

In addition, the half-etched portions HF1 and HF2 may also be formed in the non-active portion UA of the deposition area DA. For example, the half-etched portions HF1 and HF2 may be dispersed in all or a part of the non-effective portion UA so as to be provided in plural in order to disperse stress when the deposition mask 100 is pulled.

In addition, the half-etched portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in surrounding areas of the frame fixing areas FA1 and FA2. Accordingly, stress of the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or a deposition material is deposited after the deposition mask 100 is fixed to the mask frame 200 may be uniformly dispersed. Accordingly, the deposition mask 100 can be maintained to have uniform through holes.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is shown as including the half-etched portions HF1 and HF2 only in the non-deposition area NDA, but the embodiment is not limited thereto, and at least one of the deposition area DA and the non-deposition area NDA A plurality of half-etched portions may also be included. Accordingly, stress of the deposition mask 100 may be uniformly dispersed.

Frame fixing areas FA1 and FA2 for fixing to the mask frame 200 of the non-deposition area NDA may be provided at effective intervals between the half-etched parts HF1 and HF2 of the non-deposition area NDA and the half-etched parts HF1 and HF2 of the deposition area DA. between sections. For example, the first frame fixing area FA1 may be disposed between the first half-etched portion HF1 of the non-deposition area NDA and the first effective portion AA1 of the deposition area DA adjacent to the first half-etch portion HF1. For example, the second frame fixing area FA2 may be disposed between the second half-etched portion HF2 of the non-deposition area NDA and the third effective portion AA3 of the deposition area DA adjacent to the second half-etch portion HF2. Therefore, a plurality of deposition pattern parts can be fixed at the same time.

In addition, the deposition mask 100 may include semicircular opening portions at both ends in the horizontal direction X. Referring to FIG. The non-deposition area NDA of the deposition mask may include one semicircular opening portion at each of both ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an opening portion in which the center of the vertical direction Y is open on one side in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an opening portion in which the center in the vertical direction is open on the other side opposite to one side in the horizontal direction. That is, both ends of the deposition mask 100 may include opening portions at 1/2 points of the length in the vertical direction. For example, both ends of the deposition mask 100 may be shaped like a horseshoe.

In this case, the curved surface of the opening part mask may be directed to the half-etched part HF1 and the half-etched part HF2. Therefore, the opening portions at both ends of the deposition mask 100 may have the shortest at the 1/2 point of the length of the vertical direction of the first half-etched parts HF1 and HF2 or the second half-etched parts HF1 and HF2 and the deposition mask 100. spacing.

In addition, the length d1 of the vertical direction of the first half-etched part HF1 or the second half-etched part HF2 may correspond to the length d2 of the vertical direction of the opening part. Accordingly, when the deposition mask 100 is pulled, stress can be uniformly dispersed, so that deformation (wave deformation) of the deposition mask 100 can be reduced. Accordingly, the deposition mask 100 according to the embodiment may have uniform through holes, so that deposition efficiency of patterns may be improved. Preferably, the length d1 in the vertical direction of the first half-etched portion HF1 or the second half-etched portion HF2 may be about 80% to 200% of the length d2 in the vertical direction of the opening portion (d1:d2=0.8 to 2:1) . The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be about 90% to about 150% of the vertical length d2 of the opening portion (d1:d2=0.9 to 1.5:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be about 95% to about 110% of the vertical length d2 of the opening portion (d1:d2=0.95 to 1.1:1).

In addition, although not shown in the drawing, a half-etched portion may also be formed in the non-active portion UA of the deposition area DA. The half-etched portion may be distributed to all or a part of the non-effective portion UA so as to be provided in plural in order to disperse stress when the deposition mask 100 is pulled.

In addition, the half-etched portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in surrounding areas of the frame fixing areas FA1 and FA2. Accordingly, stress of the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or a deposition material is deposited after the deposition mask 100 is fixed to the mask frame may be uniformly dispersed. Accordingly, the deposition mask 100 can be maintained to have uniform through holes.

The deposition mask 100 may include a plurality of active portions AA1 , AA2 , and AA3 spaced apart in a longitudinal direction and an unactive portion UA other than the active portion.

The effective portions AA1, AA2, and AA3 may include a plurality of small surface holes V1 formed on one surface of the deposition mask 100, a plurality of large surface holes V2 formed on the other surface opposite to the one surface, connected by small The through hole TH is formed by the communicating portion CA of the boundary between the surface hole V1 and the large surface hole V2.

In addition, the active parts AA1, AA2, and AA3 may include island parts IS supported between a plurality of through holes TH.

The island portion IS may be positioned between adjacent ones of the plurality of through holes TH. That is, regions other than the through holes TH in the effective parts AA1 , AA2 , and AA3 of the deposition mask 100 may be the island parts IS.

The island portion IS may refer to a portion that is not etched in one surface 101 or the other surface 102 of an effective portion of the deposition mask 100 when forming a via hole. In detail, the island portion IS may be an unetched region between via holes on the other surface 1021 of the large surface hole V2 on which an effective portion of the deposition mask 100 is formed. Accordingly, the island portion IS may be disposed parallel to one surface 101 of the deposition mask 100 .

The island portion IS may be disposed coplanarly with the other surface 102 of the deposition mask 100 . Accordingly, the island portion IS may have the same thickness as at least a portion of the non-active portion on the other surface 102 of the deposition mask 100 . In detail, the island portion IS may have the same thickness as the unetched portion of the non-active portion on the other surface 102 of the deposition mask 100 . Therefore, deposition uniformity of sub-pixels may be improved by the deposition mask 100 .

Alternatively, the island portion IS may be disposed in a flat surface parallel to the other surface 102 of the deposition mask 100 . Here, the parallel flat surfaces may include the other surface 102 of the deposition mask 100 in which the island portion IS is disposed and the other surface 102 of the unetched deposition mask 100 of the non-effective portion through an etching process surrounding the island portion IS. The height difference is ±1μm or less.

The deposition mask 100 may include an unactive portion UA disposed at the periphery of the active areas AA1 , AA2 , and AA3 . The effective portion AA may be an inner region when connecting the peripheries of the through-holes for depositing the organic material positioned at the outermost of the plurality of through-holes. The non-active portion UA may be an outer area when connecting peripheries of a via hole for depositing an organic material positioned at the outermost of a plurality of via holes.

The uneffective portion UA is an area other than the effective portions AA1 , AA2 , and AA3 of the deposition area DA and the non-deposition area NDA. The unactive portion UA may include outer areas OA1, OA2, and OA3 surrounding the periphery of the active portions AA1, AA2, and AA3.

The number of outer areas OA1, OA2 and OA3 may correspond to the number of active parts AA1, AA2 and AA3. That is, an effective portion may include an outer region spaced apart from an end portion of an effective portion by a predetermined distance in a horizontal direction and a vertical direction.

The first active portion AA1 may be included in the first outer area OA1. The first effective portion AA1 may include a plurality of through holes TH for forming deposition materials. The first outer area OA1 surrounding the periphery of the first effective portion AA1 may include a plurality of through holes.

For example, the plurality of through holes included in the first outer area OA1 serve to reduce etching failure of the through holes TH positioned at the outermost portion of the effective portion AA1. Accordingly, the deposition mask 100 according to the embodiment may improve the uniformity of the plurality of via holes positioned in the active portions AA1, AA2, and AA3, and may improve the quality of a deposition pattern manufactured therethrough.

In addition, the shape of the through hole TH of the first effective portion AA1 may correspond to the shape of the through hole of the first outer area OA1. Accordingly, uniformity of the through holes TH included in the first effective portion AA1 may be improved. For example, the shape of the through hole TH of the first effective portion AA1 and the shape of the through hole of the first outer area OA1 may be a circular shape. However, the embodiment is not limited thereto, and the through holes TH may have various shapes such as a rhombus pattern, an ellipse pattern, and the like.

The second effective portion AA2 may be included in the second outer area OA2. The second active portion AA2 may have a shape corresponding to the first active portion AA1. The second outer area OA2 may have a shape corresponding to the first outer area OA1.

The second outer area OA2 may also include two through holes in the horizontal direction and the vertical direction, respectively, based on the through holes positioned at the outermost portion of the second active portion AA2. For example, in the second outer area OA2, two through holes may be arranged in a row in the horizontal direction at upper and lower parts of the through holes positioned at the outermost portions of the second effective portion AA2, respectively. For example, in the second outer area OA2, two through holes may be arranged in a line in the vertical direction at the left and right sides of the through hole positioned at the outermost portion of the second effective portion AA2, respectively. The plurality of via holes included in the second outer area OA2 serves to reduce etching failure of the via holes positioned at the outermost portion of the active portion. Accordingly, the deposition mask according to the embodiment may improve uniformity of a plurality of via holes positioned in an effective portion, and may improve the quality of a deposition pattern manufactured therethrough.

The third effective portion AA3 may be included in the third outer area OA3. The third effective portion AA3 may include a plurality of through holes for forming deposition materials. The third outer area OA3 surrounding the periphery of the third active portion AA3 may include a plurality of through holes.

The third active portion AA3 may have a shape corresponding to the shape of the first active portion AA1. The third outer area OA3 may have a shape corresponding to the shape of the first outer area OA1.

The through holes TH included in the valid parts AA1 , AA2 and AA3 may have shapes partially corresponding to the shapes of the through holes included in the unactive part UA. As an example, the through holes included in the active parts AA1 , AA2 , and AA3 may have a shape different from that of the through holes positioned at the edge portion of the unactive part UA. Accordingly, a stress difference according to the position of the deposition mask 100 may be adjusted.

9 and 10 are diagrams showing plan views of effective portions of a deposition mask 100 according to one embodiment, and FIG. 11 is a diagram showing another plan view of a deposition mask according to one embodiment.

9 to 11 may be plan views of any one of the first active portion AA1 , the second active portion AA2 , and the third active portion AA3 of the deposition mask 100 according to the embodiment. In addition, FIGS. 9 to 10 illustrate the shape of the through holes TH and the arrangement between the through holes TH, and the deposition mask 100 according to the embodiment is not limited to the number of the through holes TH shown in the drawings.

Referring to FIGS. 9 to 11 , the deposition mask 100 may include a plurality of through holes TH. In this case, the through holes TH may be arranged in a row or may be arranged alternately with each other according to the direction. For example, the through holes TH may be arranged in a row on the vertical axis, and may be arranged in a row on the horizontal axis.

Referring to FIGS. 9 and 10 , the deposition mask 100 may include a plurality of through holes TH. At this time, the plurality of through holes TH may have a circular shape. In detail, the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the through hole TH may correspond to each other.

The through holes TH may be arranged in a row according to the direction. For example, the through holes TH may be arranged in a row on the vertical axis and the horizontal axis.

Specifically, the first through holes TH1 and the second through holes TH2 may be arranged in a row on the horizontal axis. In addition, the third through holes TH1 and the fourth through holes TH4 may be arranged in a row on the horizontal axis.

In addition, the first through holes TH1 and the third through holes TH3 may be arranged in a row on a vertical axis. In addition, the second through holes TH2 and the fourth through holes TH4 may be arranged in a row on the horizontal axis.

That is, when the through holes TH are arranged in a row on the vertical axis and the horizontal axis, the island portion IS is arranged between two through holes TH adjacent to each other in the diagonal direction, where both the vertical axis and the horizontal axis intersect. That is, the island portion IS may be a position between two adjacent through holes TH positioned in a diagonal direction to each other.

For example, the island portion IS may be disposed between the first and fourth through holes TH1 and TH4. Also, the island portion IS may be disposed between the second and third through holes TH2 and TH3. The island parts IS may be disposed in an inclination angle direction of about +45 degrees and an inclination angle direction of about -45 degrees with respect to a horizontal axis crossing two adjacent through holes, respectively. Here, an inclination angle direction of about ±45 may mean a diagonal direction between a horizontal axis and a vertical axis, and the diagonal inclination angle is measured on the same plane of the horizontal axis and the vertical axis.

In addition, referring to FIG. 11 , another deposition mask 100 according to an embodiment may include a plurality of through holes. At this time, the plurality of through holes may have an oval shape. In detail, the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the through hole TH may be different from each other. For example, the diameter Cx in the horizontal direction of the through hole may be larger than the diameter Cy in the vertical direction. However, the embodiment is not limited thereto, and of course, the through hole may have a rectangular shape, an octagonal shape, or a circular octagonal shape.

The through holes TH may be arranged in a row on any one of the vertical axis and the horizontal axis, and may be arranged alternately with each other on the other axis.

Specifically, the first through hole TH1 and the second through hole TH2 may be arranged in a row on the horizontal axis, and the third through hole TH1 and the fourth through hole TH4 may be arranged in a row with the first through hole TH1 and the second through hole TH4 on the vertical axis, respectively. The through holes TH2 are arranged in a staggered manner.

When the through holes TH are arranged in a row in either direction of the vertical axis and the horizontal axis and staggered in the other direction, the island portion IS can be positioned between two adjacent through holes in the other direction of the vertical axis and the horizontal axis. Between TH1 and TH2. Alternatively, the island portion IS may be positioned between three through holes TH1, TH2, and TH3 adjacent to each other. Two through-holes TH1 and TH2 among the three adjacent through-holes TH1, TH2 and TH3 are through-holes arranged in a row, and the remaining one through-hole TH3 may refer to a direction corresponding to the direction of the row. A through hole in a region between the two through holes TH1 and TH2 is provided at an adjacent position. The island portion IS may be disposed between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS may be disposed between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.

Furthermore, in the deposition mask 100 according to the embodiment, in the case of measuring the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction Cy of the reference hole as any of the through holes, each hole adjacent to the reference hole The deviation between the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of TH can be realized as 2% to 10%. That is, when the size deviation between adjacent holes of one reference hole is realized to be 2% to 10%, deposition uniformity can be ensured. The dimensional deviation between a reference hole and an adjacent hole may be 4% to 9%. For example, the dimensional deviation between a reference hole and an adjacent hole may be 5% to 7%. For example, the dimensional deviation between a reference hole and an adjacent hole may be 2% to 5%. When the size deviation between the reference hole and the adjacent holes is less than 2%, the incidence of moire fringes in the OLED panel after deposition may increase. When the size deviation between the reference hole and the adjacent holes is greater than 10%, the incidence of color non-uniformity in the OLED panel after deposition may increase. The average deviation of the diameters of the via holes may be ±5 μm. For example, the average deviation of the diameters of the via holes may be ±3 μm. For example, the average deviation of the diameters of the via holes may be ±1 μm. In embodiments, deposition efficiency may be improved by achieving a size deviation within ±3 μm between a reference well and an adjacent well.

The island portion IS of FIGS. 9 to 11 may refer to an unetched surface between the through holes TH in the other surface of the deposition mask 100 in which the large surface hole V2 of the effective portion AA is formed. In detail, the island portion IS may be another surface of the unetched deposition mask 100 in the active portion AA of the deposition mask except the second etched surface ES2 and the through hole TH positioned in the large surface hole. The deposition mask 100 of one embodiment may be used to deposit OLED pixels with a resolution of 400 PPI or higher, in particular 400 PPI to 800 PPI or higher high resolution to super high resolution.

For example, the deposition mask 100 of the embodiment may be used to form a high definition (High Definition, HD) high resolution deposition pattern having a resolution of 400 PPI or higher. For example, the deposition mask 100 of the embodiment may be used to deposit OLED pixels having a pixel count of 1920*1080 or more in horizontal and vertical directions and a resolution of 400 PPI or more. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form a number of pixels with a resolution of 1920*1080 or more.

For example, the deposition mask 100 of the embodiment may be used to form a high resolution deposition pattern of Quad High Definition (QHD) having a resolution of 500 PPI or higher. For example, the deposition mask 100 of the embodiment may be used to deposit OLED pixels having a pixel count of 2560*1440 or more in horizontal and vertical directions and a resolution of 530 PPI or more. According to the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or higher based on a 5.5-inch OLED panel. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form a pixel number with a resolution of 2560*1440 or higher.

For example, the deposition mask 100 of the embodiment may be used to form an ultra-high-resolution deposition pattern having a resolution of 700 PPI or higher (Ultra-High Definition, UHD). For example, the deposition mask 100 of the embodiment can be used to form a deposition pattern with UHD-level resolution to deposit OLEDs with a pixel number of 3840*2160 or more in the horizontal and vertical directions and a resolution of 794PPI or higher. pixels.

The diameter of the through hole TH may be the width between the communication parts CA. In detail, the diameter of the through hole TH may be measured at the point where the end of the inner side surface in the small surface hole V1 meets the end of the inner side surface in the large surface hole V2. The measurement direction of the diameter of the through hole TH may be any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be an average value of values measured in the horizontal direction, the vertical direction, and the diagonal direction, respectively.

Therefore, the deposition mask 100 according to the embodiment may realize QHD level resolution. For example, the diameter of the through hole TH may be about 15 μm to about 33 μm. For example, the diameter of the through hole TH may be about 19 μm to about 33 μm. For example, the diameter of the through hole TH may be about 20 μm to about 27 μm. When the diameter of the through hole TH exceeds about 33 μm, it may be difficult to achieve a resolution of 500 PPI or higher. On the other hand, when the diameter of the through holes TH is less than about 15 μm, deposition failure may occur.

Referring to FIGS. 9 and 10 , an interval between two adjacent through holes among the plurality of through holes TH in the horizontal direction may be about 48 μm or less. For example, an interval between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, an interval between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the pitch may refer to a pitch P1 between the center of the first through hole TH1 and the center of the second through hole TH2 adjacent in the horizontal direction. In addition, the pitch may refer to a pitch P2 between the center of the first island part and the center of the second island part adjacent in the horizontal direction. Here, the center of the island portion IS may be the center at the other surface that is not etched between the four adjacent through holes TH in the horizontal and vertical directions. For example, the center of the island part IS may refer to connecting a third through hole TH3 positioned vertically adjacent to the first through hole TH1 and a vertically adjacent one based on the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. A point where a horizontal axis and a vertical axis of an edge of one island portion IS intersect in a region between the second through holes TH2 and the fourth through holes TH4.

In addition, referring to FIG. 11 , an interval between two adjacent through holes among the plurality of through holes TH in the horizontal direction may be about 48 μm or less. For example, an interval between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, an interval between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the pitch may refer to a pitch P1 between the center of the first through hole TH1 and the center of the second through hole TH2 adjacent in the horizontal direction. In addition, the pitch may refer to a pitch P2 between the center of the first island part and the center of the second island part adjacent in the horizontal direction. Here, the center of the island portion IS may be the center at the other surface that is not etched between one via hole and two via holes adjacent in the vertical direction. Alternatively, here, the center of the island portion IS may be the center at the other surface that is not etched between two through holes and one through hole adjacent in the vertical direction. That is, the center of the island portion IS is the center of the unetched surface between the three adjacent through holes, and the three adjacent through holes may mean that a triangular shape may be formed when the centers are connected.

The measuring direction of the diameter of the through holes TH and the measuring direction of the spacing between two adjacent through holes TH may be the same. The pitch of the through holes TH may be a value measuring the pitch between two adjacent through holes TH in a horizontal direction or a vertical direction.

That is, the deposition mask 100 according to the embodiment may deposit OLED pixels having a resolution of 400 PPI or higher. In detail, in the deposition mask 100 according to the embodiment, the diameter of the through holes TH is 33 μm or less, and the pitch between the through holes TH is 48 μm or less, and thus a deposition resolution of 500 PPI or higher can be deposited. OLED pixels. More specifically, green organic materials with a resolution of 500PPI or higher can be deposited. That is, QHD-level resolution can be achieved using the deposition mask 100 according to the embodiment.

A diameter of the through holes TH and an interval between the through holes TH may be a size for forming a green sub-pixel. For example, the diameter of the through hole TH may be measured based on a green (G) pattern. Since the green (G) pattern has a low recognition rate by vision, it requires a larger number than the R and B patterns, and the pitch between the through holes TH may be narrower than the R and B patterns. The deposition mask 100 may be an OLED deposition mask for realizing a QHD display pixel.

For example, the deposition mask 100 may be used to deposit at least one sub-pixel of red R, first green G1, blue B, and second green G2. In detail, the deposition mask 100 may be used to deposit the red R sub-pixel. Alternatively, deposition mask 100 may be used to deposit the blue B sub-pixel. Alternatively, the deposition mask 100 may be used to simultaneously form the first green G1 sub-pixel and the second green G2 sub-pixel.

The pixel arrangement of the organic light emitting display device may be arranged in the order of "red R-first green G1-blue B-second green G2" (RGBG). In this case, red R-first green G1 may form a kind of pixel RG, and blue B-second green G2 may form another pixel BG. In an organic light emitting display device having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than that of the red light emitting organic material and the blue light emitting organic material, a form of the deposition mask 100 as in the present invention may be required. .

In addition, the deposition mask 100 according to the embodiment may have the through hole TH having a diameter of about 20 μm or less in the horizontal direction. Therefore, the deposition mask 100 according to the embodiment may realize UHD-level resolution. For example, in the deposition mask 100 according to the embodiment, the diameter of the through holes TH is about 20 μm or less, and the pitch between the through holes is about 32 μm or less, and thus OLEDs with a resolution of 800 PPI class can be deposited. pixels. That is, UHD-level resolution can be achieved using the deposition mask according to the embodiment.

The diameter of the via hole and the pitch between the via holes may be a size for forming a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing UHD display pixels.

Fig. 12 is a diagram showing overlapping sections to describe the difference in height and size between the section along the A-A' direction and the section along the B-B' direction of Figs. 9 and 10 .

First, the section along the A-A' direction of Figs. 9 and 10 will be described. The A-A' direction is a cross-section across the center region between the first and third through holes TH1 and TH3 adjacent in the vertical direction. That is, the cross section along the A-A' direction may not include the through hole TH.

In a section along the A-A' direction, the island portion IS of the other surface that is not etched as a deposition mask may be positioned between the etched surface ES2 in the large surface hole and the etched surface ES2 in the large surface hole. Accordingly, the island portion IS may include a surface parallel to one unetched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to another unetched surface of the deposition mask 100 .

Next, the section along the B-B' direction of Figs. 9 and 10 will be described. The B-B' direction is a section crossing the center of each of the first and second through holes TH1 and TH2 adjacent in the horizontal direction. That is, a section along the direction B-B' may include a plurality of through holes TH.

One rib RB may be positioned between the third and fourth through holes TH3 and TH4 adjacent in the direction B-B'. Another rib RB may be positioned between the fourth through hole TH4 and a fifth through hole adjacent to the fourth through hole in a horizontal direction but positioned in a direction opposite to the third through hole TH3 . A through hole TH may be positioned between one rib and the other rib. That is, one through hole TH may be positioned between two ribs RB adjacent in the horizontal direction.

Furthermore, in the section along the B-B' direction, ribs RB as regions where etched surfaces ES2 in a large-surface hole and etched surfaces ES2 in adjacent large-surface holes are connected to each other may be positioned. Here, the rib RB may be a region in which the boundaries of two adjacent large-surface holes are connected. Since the rib RB is an etched surface, the rib RB may have a smaller thickness than the island portion IS. For example, the width of the island portion IS may be 2 μm or more. That is, the width on the other surface in a direction parallel to the other surface of the portion remaining unetched may be about 2 μm or more. When the width of one end and the other end of one island portion IS is about 2 μm or more, the total volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure ensures sufficient rigidity against tensile force applied to an organic material deposition process and the like, and thus is advantageous for maintaining uniformity of via holes.

Fig. 13 is a diagram showing a cross-sectional view along the B-B' direction of Figs. 9 and 10 . Referring to FIG. 13 , a section in the B-B' direction of FIGS. 9 and 10 and an enlarged section of the rib RB and the through hole TH between the ribs RB according to the effective area of FIG. 12 will be described.

According to the deposition mask 100 of the embodiment, the thickness of the active portion AA in which the through hole TH is formed by etching may be different from the thickness of the non-etched non-active portion UA. In detail, the thickness of the rib RB may be smaller than that in the unetched unactive portion UA.

In the deposition mask 100 of the embodiment, the thickness of the unactive portion UA may be greater than the thickness of the active portions AA1 , AA2 , and AA3 . In this case, the island portion IS is an etching area, and the island portion IS may correspond to a maximum thickness of the non-active portion UA to the non-deposition area NDA. For example, the maximum thickness from the non-active portion UA to the non-deposition area NDA of the deposition mask 100 may be about 30 μm or less. Therefore, the maximum thickness of the island portion IS may be about 30 μm or less, and the thickness of the effective portions AA1, AA2, and AA3 other than the island portion IS may be smaller than that of the non-effective portion UA. In detail, in the deposition mask 100, the maximum thickness of the non-active portion UA to the non-deposition area NDA may be about 25 μm or less. For example, in the deposition mask of an embodiment, the maximum thickness from the non-active area to the non-deposition area may be about 15 μm to about 25 μm. Accordingly, the maximum thickness of the island portion IS may be about 15 μm to about 25 μm. When the maximum thickness of the non-effective portion or the non-deposition region of the deposition mask 100 according to the embodiment exceeds about 30 μm, it may be difficult to form the through hole TH having a fine size due to the thick thickness of the metal plate 10 . Also, when the maximum thickness of the non-active portion UA or the non-deposition area NDA of the deposition mask 100 is less than about 15 μm, it may be difficult to form via holes having uniform sizes due to the thin thickness of the metal plate.

The maximum thickness T3 measured at the center of the rib RB may be about 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB may be about 7 μm to about 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB may be about 6 μm to about 9 μm. When the maximum thickness T3 measured at the center of the rib RB exceeds about 15 μm, it may be difficult to form an OLED deposition pattern with a high resolution of 500 PPI order or higher. Also, when the maximum thickness T3 measured at the center of the rib RB is less than about 6 μm, it may be difficult to uniformly form a deposition pattern.

The height H1 of the small surface hole of the deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB may be about 7 μm to about 9 μm, and the height H1 between one surface of the deposition mask 100 and the communication portion may be about 1.4 μm to about 3.5 μm. The height H1 of the small surface holes of the deposition mask 100 may be about 3.5 μm or less. For example, the height of the small surface hole V1 may be about 0.1 μm to about 3.4 μm. For example, the height of the small surface holes V1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small surface holes V1 of the deposition mask 100 may be about 1 μm to about 3 μm. Here, the height may be measured in a thickness measurement direction of the deposition mask 100 , that is, in a depth direction, and may be a height measured from one surface of the deposition mask 100 to the communicating portion. In detail, it may be measured in the z-axis direction at 90 degrees from the above-mentioned horizontal direction (x direction) and vertical direction (y direction) in the plan view of FIGS. 8 to 9 or FIG. 10 .

When the height between one surface of the deposition mask 100 and the communicating portion exceeds about 3.5 μm, deposition failure may occur due to a shadow effect that the deposition material spreads to a larger area than the via hole during OLED deposition. Area.

In addition, the aperture W1 at one surface of the small surface hole V1 in which the deposition mask 100 is formed and the aperture W2 at a communicating portion that is a boundary between the small surface hole V1 and the large surface hole V2 may be similar to or different from each other. The aperture W1 at one surface of the small surface hole V1 on which the deposition mask 100 is formed may be larger than the aperture W2 at the communicating portion.

For example, the difference between the aperture W1 at one surface of the deposition mask 100 and the aperture W2 at the communicating portion may be about 0.01 μm to about 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communicating portion may be about 0.03 μm to about 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communicating portion may be about 0.05 μm to about 1.1 μm.

When the difference between the pore diameter W1 at one surface of the deposition mask 100 and the pore diameter W2 at the communicating portion is greater than about 1.1 μm, deposition failure may occur due to shadow effects.

In addition, the angle of inclination connecting one end E1 of the large surface hole V2 positioned at the other surface 102 of the deposition mask 100 opposite to the one surface 101 and one end E2 of the communicating portion between the small surface hole V1 and the large surface hole V2 θ may be from 40 degrees to 55 degrees. Accordingly, a deposition pattern having a high resolution of 400 PPI level or higher, specifically 500 PPI level or higher, may be formed, and at the same time, the island portion IS may exist on the other surface 102 of the deposition mask 100 .

FIG. 14 is a diagram illustrating a manufacturing process of the deposition mask 100 according to one embodiment.

Referring to FIG. 14 , a manufacturing process of a deposition mask 100 according to an embodiment may include preparing a metal plate 10, forming a via hole on the metal plate 10 by using a photoresist layer, and removing the photoresist layer to form a metal plate 10 including Deposition mask for vias.

When producing the metal plate 10, the metal plate 10 can be produced by a cold rolling method. In detail, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, cold rolling, and annealing processes.

The metal plate 10 may contain nickel (Ni) alloy. Specifically, the metal plate 10 may contain an alloy of iron (Fe) and nickel (Ni). More specifically, the metal plate 10 may contain iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). For example, metal plate 10 may include about 60% to about 65% iron by weight, and may include about 35% to about 40% nickel by weight. In addition, the metal plate 10 may also contain a small amount of at least one of the following elements: carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt ( Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). Here, a small amount may mean not more than 1% by weight. That is, the metal plate 10 may contain Invar.

The atomic concentration of the surface of the metal plate 10 may be changed during annealing. For example, the metal plate 10 may include an outer portion SP including a surface and an inner portion IP other than the outer portion SP, and the atomic concentration of the outer portion SP of the metal plate 10 may be different from that of the inner portion IP of the metal plate 10 .

In detail, during the annealing process, the metal plate 10 may be heat-treated at a temperature of about 550° C. to about 650° C. for about 45 seconds to about 75 seconds. Preferably, during the annealing process, the metal plate 10 may be heat-treated at a temperature of about 600° C. for about 60 seconds.

The annealing process can be performed in an inert gas atmosphere. For example, the annealing process may be performed in an atmosphere of an inert gas such as helium, nitrogen, and argon. Here, the atmosphere may refer to an atmosphere in which 90% or more of inert gas exists.

Atoms on the surface of the metal plate 10 may rearrange through the annealing process. In detail, the atomic concentration of iron, nickel, oxygen, etc. on the surface of the metal plate 10 may be changed by an annealing process, and an oxide film may be formed on the surface to prevent corrosion and corrosion progression in advance.

Therefore, the atomic concentration of iron, nickel, oxygen, and the like on the surface of the metal plate 10 can be changed. In detail, the maximum atomic concentration of nickel may be greater in a region of a depth range of about 30 nm or less from the surface of the metal plate 10 than in the inner portion IP of the metal plate 10 . In particular, the atomic concentration of nickel may have a maximum value within a depth range of about 10 nm of the outer portion SP. In addition, in a region of a depth range of about 10 nm or less from the surface of the metal plate 10, the minimum atomic concentration value of oxygen may be about 10 atomic % or less.

That is, since the atomic concentration of oxygen on the surface of the metal plate 10 is lowered through the annealing process, the thickness of the formed oxide film can be minimized. In addition, since the atomic concentration of nickel on the surface can be increased through the annealing process, it can have improved corrosion resistance.

In addition, preparing the metal plate 10 may also include reducing the thickness according to the target thickness of the metal plate 10 . Reducing the thickness may be a step of forming a desired thickness by performing more rolling or etching on the metal plate 10 that has undergone the rolling process.

For example, a metal plate 10 having a thickness of about 30 μm or less may be required to make a deposition mask for achieving a resolution of 400 PPI or higher, and a metal plate 10 having a thickness of about 20 μm to about 30 μm may be needed to make a deposition mask for A deposition mask to achieve a resolution of 500 PPI or higher, and a metal plate 10 having a thickness of about 15 μm to about 20 μm may be required to manufacture a deposition mask capable of a resolution of 800 PPI or higher.

In addition, preparing the metal plate 10 may optionally include a surface treatment step for improving the etch factor. In detail, in nickel alloys such as Invar, it is possible to increase the etching rate at the beginning of etching, and thus it is possible to decrease the etching factor of small surface pores V1. Therefore, it may be difficult to form the through holes TH having fine dimensions and the through holes TH at uniform positions.

Therefore, a surface treatment layer for preventing rapid etching can be formed on the surface of the metal plate 10 . The surface treatment layer may be an etching stopper layer whose etching rate is lower than that of the metal plate 10 . The surface treatment layer may have a crystal plane and a crystal structure different from those of the metal plate 10 . For example, when the surface treatment layer contains elements different from those of the metal plate 10, crystal planes and crystal structures may be different from each other.

For example, the surface treatment layer may have a corrosion potential different from that of the metal plate 10 in the same corrosion environment. For example, the surface treatment layer may have a corrosion current or corrosion potential different from that of the metal plate 10 when the same etchant is applied at the same temperature for the same time.

The metal plate 10 may include a surface treatment layer or a surface treatment portion on one surface and/or both surfaces, the entire surface, and/or an active area. The surface treatment layer or the surface treatment portion may contain an element different from the metal plate 10 , or may contain a metal element having a slow corrosion rate in a larger content than the metal plate 10 .

Next, forming a via hole may be performed on the metal plate 10 using a photoresist layer. Forming the through hole may include forming a first groove for forming a small surface hole V1 on one surface of the metal plate 10, and forming a second groove for forming a large surface hole V2 on the other surface of the metal plate 10. grooves to form vias.

A photoresist layer may be provided on one surface of the metal plate 10 to form small surface holes V1 in the metal plate 10 . The patterned first photoresist layer PR1 may be provided on one surface of the metal plate 10 by exposing and developing the photoresist layer. In addition, an etching barrier layer such as a coating or a film layer for preventing etching may be provided on the other surface of the metal plate 10 opposite to the one surface.

Subsequently, a first groove may be formed on one surface of the metal plate 10 by half-etching an opening portion of the patterned first photoresist layer PR1. In detail, the opening portion of the first photoresist layer PR1 can be exposed to an etchant or the like, so that in the opening portion of the one surface of the metal plate 10 on which the first photoresist layer PR1 is not provided, Etching occurs.

Forming the first groove is a step of etching the metal plate 10 having a thickness T1 of about 20 μm to about 30 μm to a thickness of about 1/2. The depth of the first groove formed through this step may be about 10 μm to 15 μm. That is, the thickness T2 of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

Forming the first groove may be anisotropic etching or semi-additive process (SAP). In detail, the opening portion of the first photoresist layer PR may be half-etched using anisotropic etching or a semi-additive method. Therefore, in the groove formed by half etching, the etching rate in the depth direction (b direction) can be faster than that in the side etching (a direction) compared to isotropic etching.

The etch factor of the small surface hole V1 may be 2.0 to 3.0. For example, the etch factor of the small surface hole V1 may be 2.1 to 3.0. For example, the etch factor of the small surface hole V1 may be 2.2 to 3.0.

Here, the etching factor may mean the depth B of the etched small surface hole divided by the width A of the photoresist layer extending from the island portion IS on the small surface hole and protruding toward the center of the through hole TH (etching factor = B/A). A may mean an average value of the width of one side of the photoresist layer protruding on one surface hole and the width of the other side opposite to the side.

Subsequently, a photoresist layer may be provided on the other surface of the metal plate 10 to form large surface holes V2. A patterned second photoresist layer PR2 may be provided on the other surface of the metal plate 10 by exposing and developing the photoresist layer. A patterned second photoresist layer PR2 having an opening portion may be disposed on the other surface of the metal plate 10 to form a large surface hole V2. An etching barrier such as a coating or a film layer for preventing etching may be provided on one surface of the metal plate 10 .

The opening portion of the second photoresist layer PR2 can be exposed to an etchant or the like, so that etching can occur in the opening portion of the other surface of the metal plate 10 on which the second photoresist layer PR2 is not provided. . The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

When the opening portion of the second photoresist layer PR2 is etched, the groove on one surface of the metal plate 10 may be connected to the large surface hole V2 to form a via hole.

Forming the through holes may be formed by forming the second grooves for forming the large surface holes V2 after forming the first grooves for forming the small surface holes V1 .

In addition, forming the through hole may form the through hole by performing formation of the first groove for forming the small surface hole V1 after forming the second groove for forming the large surface hole V2.

In addition, forming the through hole may form the through hole TH by simultaneously performing the formation of the first groove for forming the small surface hole V1 and the formation of the second groove for forming the large surface hole V2.

Next, after removing the photoresist layer, it may be possible by forming a large surface hole V2 formed on one surface, a small surface hole V1 formed on the other surface opposite to the one surface, and by connecting the large surface hole The communication portion of the boundary between V2 and the small surface hole V1 forms the deposition mask 100 of the through hole TH to form the deposition mask 100 .

The deposition mask 100 formed through the above steps may contain the same material as the metal plate 10 . For example, a region of the deposition mask 100 in which surface etching is not performed may contain a material having the same composition as the outer portion SP of the metal plate 10 . That is, the island portion IS of the deposition mask 100 may include a material having the same composition as that of the outer portion SP. In addition, when the deposition mask 100 further optionally includes a surface treatment step, the island portion IS of the deposition mask 100 may further include the above-mentioned surface treatment layer.

In the deposition mask 100 formed through the above steps, the maximum thickness at the center of the rib RB may be smaller than the maximum thickness of the non-active area not subjected to etching. For example, the maximum thickness at the center of rib RB may be about 15 μm. For example, the maximum thickness at the center of the rib RB may be less than about 10 μm. However, the maximum thickness in the non-active area of the deposition mask 100 may be about 20 μm to about 30 μm, and may be about 15 μm to about 25 μm. That is, the maximum thickness in the non-active area of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared when the metal plate 10 is prepared.

15 and 16 are diagrams illustrating deposition patterns formed through a deposition mask according to an embodiment.

Referring to FIG. 15 , in the deposition mask 100 according to one embodiment, a height H1 between one surface of the deposition mask 100 in which the small surface holes V1 are formed and the communicating portion may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, the distance between one surface 101 of the deposition mask 100 and the substrate on which the deposition pattern is disposed may be short, and thus deposition failure due to shadow effects may be reduced. For example, when R, G, and B patterns are formed by using the deposition mask 100 according to the embodiment, failure to deposit different deposition materials in a region between two adjacent patterns may be prevented. Specifically, as shown in FIG. 16, when the above-mentioned patterns are formed in the order of R, G, and B from the left, the R pattern and the G pattern can be prevented from being deposited in the area between the R pattern and the G pattern due to the shadow effect.

In the deposition mask 100 , the atomic concentration of the outer portion SP of the metal plate 10 may be different from the atomic concentration of the inner portion IP of the metal plate 10 .

In detail, the maximum atomic concentration of nickel in the outer portion SP in the deposition mask 100 may be greater than the maximum atomic concentration of nickel in the inner portion IP, and within a depth range of about 10 nm or less from the surface of the deposition mask 100 The minimum value of the atomic oxygen concentration may be about 10 atomic % or less. The outer portion SP of the deposition mask 100 may refer to the outer portion SP of the metal plate 10 in which an etching process such as half etching is not performed. In detail, the outer portion SP may refer to an area where the etching process is not performed in the deposition area DA and the non-deposition area NDA. In particular, the outer portion SP in the deposition area DA may be a surface of one surface of the deposition mask 100 on which surface etching is not performed and a specific effective portion UA and an island portion IS are formed, and may refer to the deposition mask 100. The surface of the other surface on which the small surface hole V1 is not formed.

That is, since the atomic concentration of nickel in the outer portion SP of the deposition mask 100 according to the embodiment is high and the atomic concentration of oxygen is low, it may be possible during the steps of manufacturing the deposition mask 100 and repeating pattern deposition by using the deposition mask 100. The surface of the deposition mask 100 is effectively prevented from being corroded. Specifically, the island portion IS can be prevented from being corroded. Accordingly, the deposition mask 100 may secure sufficient rigidity against the pulling force applied during the organic material deposition process to uniformly deposit the organic material.

In addition, since the atomic concentration of chromium is an extremely small amount of 0.03 atomic % or less, formation of segregation due to chromium and secondary precipitation equalization can be prevented, and small surface pores V1, large surface pores V2, and through holes TH, thereby minimizing deposition failures.

The features, structures, effects, etc. described in the above-mentioned embodiments are included in at least one embodiment of the present invention, but are not limited to one embodiment. In addition, the features, structures, and effects shown in each embodiment may be combined or modified for other embodiments by those skilled in the art. Therefore, it should be understood that such combinations and modifications are included in the scope of the present invention.

In addition, the above description focuses on the embodiments, but they are only exemplary and do not limit the present invention. It will be apparent to those skilled in the art that various modifications and applications not shown above are possible without departing from the essential characteristics of the present embodiment. For example, elements of the embodiments described herein may be modified and implemented. Furthermore, it should be construed that differences related to such changes and applications are included within the scope of the present invention defined in the appended claims.

The following technical solutions are also provided in the present invention:

Additional Notes 1. A metal plate for making a deposition mask, said metal plate comprising:

an iron (Fe)-nickel (Ni) alloy metal material having a thickness of 30 μm or less and containing oxygen (O) and chromium (Cr);

wherein said metal material is Invar having an atomic concentration of chromium (Cr) of 0.03 atomic % or less, and

said metallic material comprises an outer portion and an inner portion other than said outer portion, said outer portion comprising a surface,

wherein the outer portion has a maximum atomic concentration of iron (Fe) of 60 atomic % or less, a maximum atomic concentration of nickel (Ni) of 40 atomic % to 45 atomic %, within a depth range of 14 nm or less from the surface. Atomic concentration and minimum atomic concentration of oxygen (O) of 10 atomic % or less.

Additional note 2. The metal plate according to additional note 1, wherein the outer portion has a depth range of 30 nm or less from the surface, and maximum atomic concentrations of nickel in the outer portion and the inner portion are different from each other.

Additional note 3. The metal plate according to additional note 1, wherein the nickel (Ni) has a maximum atomic concentration of 42 atomic % to 44 atomic % within a depth range of 14 nm or less from the surface.

Additional note 4. The metal plate according to additional note 1, wherein nickel contained in the outer portion has a maximum atomic concentration value within a depth range of 3 nm to 9 nm from the surface.

Additional note 5. The metal plate according to additional note 1, wherein the oxygen (O) has a minimum atomic concentration of 5 atomic % or less within a depth range of 14 nm or less from the surface.

Note 6. A deposition mask comprising:

an iron (Fe)-nickel (Ni) alloy metal material, the iron (Fe)-nickel (Ni) alloy metal material comprising a deposition area and a non-deposition area other than the deposition area,

wherein the deposition area includes a plurality of active portions spaced apart in the longitudinal direction and non-active portions other than the active portions,

Among them, the effective parts include:

a plurality of small surface pores formed on one surface of the metallic material;

a plurality of large surface pores formed on the other surface of the metal material opposite to the one surface;

a plurality of through holes respectively communicating with the small surface pores and the large surface pores; and

island portions formed between adjacent vias,

wherein said vias have a resolution of 400PPI or greater, and

The metal material contains oxygen (O) and chromium (Cr),

wherein said metal material is Invar having an atomic concentration of chromium (Cr) of 0.03 atomic % or less,

the metallic material includes an outer portion and an inner portion other than the outer portion, the outer portion including a surface, and

within a depth range of 14 nm or less from the surface of at least one of the non-deposition region, the non-effective portion, and the island portion, the maximum atomic concentration of iron (Fe) is 60 atomic % or less, The maximum atomic concentration of nickel (Ni) is 40 atomic % to 45 atomic %, and the minimum atomic concentration of oxygen (O) is 10 atomic % or less.

Note 7. The deposition mask according to Note 6, wherein the metal material has a thickness of 30 μm or less.

Note 8. The deposition mask according to note 6, wherein the nickel (Ni) has a maximum atomic concentration of 42 atomic % to 44 atomic % within a depth range of 14 nm or less from the surface.

Note 9. The deposition mask according to note 6, wherein the effective portion has a thickness of 30 μm or less, and the island portion has a maximum thickness of 30 μm or less.

Supplementary note 10. The deposition mask according to supplementary note 6, which is used for green organic material deposition, wherein the diameter of the through holes is 33 μm or less, the distance between the through holes is 48 μm or less, the The resolution of the deposition mask is 500PPI or greater.

Claims (11)

1. A metal plate for making a deposition mask, said metal plate comprising: Iron (Fe)-nickel (Ni) alloy metal material containing oxygen (O) and chromium (Cr); said metallic material comprises an outer part (SP) and an inner part (IP) other than said outer part (SP), said outer part comprising a surface, wherein the maximum atomic concentration of iron (Fe) contained in the outer part (SP) is different from the maximum atomic concentration of iron (Fe) contained in the inner part (IP), wherein the maximum atomic concentration of nickel (Ni) contained in the outer part (SP) is greater than the maximum atomic concentration of nickel (Ni) contained in the inner part (IP), wherein the outer part has 60 atomic % or more A small maximum atomic concentration of iron (Fe), a maximum atomic concentration of nickel (Ni) of 40 atomic % to 45 atomic %, and wherein the ratio of the maximum atomic concentration of nickel (Ni) to the maximum atomic concentration of iron (Fe) contained in the outer portion (SP) within a depth range of 14 nm or less from the surface is 2/3 or more big. 2. The metal plate according to claim 1, wherein the outer part has a maximum atomic concentration of iron (Fe) of 50 atomic % to 60 atomic % within a depth range of 14 nm or less from the surface, and wherein the ratio of the maximum atomic concentration of nickel (Ni) to the maximum atomic concentration of iron (Fe) contained in the external portion (SP) within a depth range of 14 nm or less from the surface is 2/3 to 9 /10. 3. The metal plate according to claim 1, wherein the minimum atomic concentration of oxygen (O) contained in the outer part (SP) is greater than the minimum atomic concentration of oxygen (O) contained in the inner part (IP) . 4. The metal plate according to claim 1, wherein the metal material is Invar having 35% to 40% by weight of nickel (Ni), and Wherein the atomic concentration of chromium (Cr) of the metal material is 0.03 atomic % or less. 5. The metal plate according to claim 1, wherein the metal material has a thickness of 30 [mu]m or less. 6. The metal plate according to claim 1, wherein the outer portion has a minimum atomic concentration of oxygen (O) of 10 atomic % or less within a depth range of 14 nm or less from the surface. 7. The metal plate according to claim 1, wherein iron (Fe) contained in said outer portion (SP) within a depth range of 14 nm or less from said surface has a maximum atomic concentration greater than that of nickel (Ni) the maximum atomic concentration. 8. The metal plate of claim 1, wherein said outer portion has a depth extent of 30 nm or less from said surface, Wherein the nickel contained in the outer portion has a maximum atomic concentration value within a depth range of 3 nm to 9 nm from the surface. 9. The metal plate according to claim 1, wherein nickel (Ni) has a maximum atomic concentration of 42 atomic % to 44 atomic % within a depth range of 14 nm or less from the surface. 10. The metal plate according to claim 1, wherein the maximum atomic concentration of nickel (Ni) contained in a depth range of 9 nm or less from the surface is greater than that in a depth range of 7 nm or less from the surface The maximum atomic concentration of nickel (Ni) contained in it. 11. The metal plate according to claim 1, wherein the minimum atomic concentration of oxygen (O) is 5 atomic % or less within a depth range of 14 nm or less from the surface, and wherein the minimum atomic concentration of oxygen (O) contained within a depth range of 9 nm or less from the surface is smaller than the minimum atomic concentration of oxygen (O) contained within a depth range of 7 nm or less from the surface .

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