CN116002076B - Semiconductor temperature control-based double-pass shape memory hinge device and application method thereof - Google Patents
Semiconductor temperature control-based double-pass shape memory hinge device and application method thereof Download PDFInfo
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Abstract
The invention provides a semiconductor-based temperature control double-pass shape memory hinge device, which comprises a temperature control semiconductor layer, a shape memory alloy layer and a shape memory polymer layer in an extension assembly, wherein the temperature control semiconductor layer is positioned between the shape memory alloy layer and the shape memory polymer layer. The temperature control semiconductor layer comprises refrigeration semiconductor crystal grains, flexible heat insulation materials, copper sheets and flexible heat conduction materials, the refrigeration semiconductor crystal grains exist in pairs, the flexible heat insulation materials are arranged between the adjacent refrigeration semiconductor crystal grains, and the copper sheets at two ends of the refrigeration semiconductor crystal grains are respectively connected with the bonding surfaces of the shape memory alloy layer and the shape memory polymer layer through the flexible heat conduction materials. The invention realizes the repeated controllable deformation of the extension assembly by changing the current direction of the refrigerating semiconductor crystal grain to respectively control the temperature of the shape memory alloy layer or the shape memory polymer layer, is easy to realize the self-locking and self-unfolding functions, and has the advantages of small unfolding impact and high rigidity.
Description
Technical Field
The invention relates to the technical field of aerospace, in particular to a semiconductor temperature control-based double-pass shape memory hinge device and a use method thereof.
Background
With the development of aerospace industry, space folding and unfolding mechanisms gradually tend to be light, large and intelligent. The solar panel, the antenna and other parts are designed to be the foldable device, so that the envelope volume can be greatly reduced, and the space utilization rate can be improved. The traditional folding and unfolding mechanism in the aerospace field is driven by a mechanical structure, and the driving mode of the mechanical structure driving joint hinge mainly comprises spring hinges, motors, motor-spring mixing, high-elasticity materials and the like, and has the defects of large occupied space, large mass, large unfolding impact and the like.
The hinge structure with shape memory function solves the defect of mechanical structure driving to a certain extent. Shape Memory Alloys (SMA) have the property of being able to relieve residual strain and recover an intrinsic shape at high temperatures (> Af) after loading and unloading at low temperatures. Thermoplastic Shape Memory Polymers (SMP) are in a high strength glassy state below the phase transition temperature t g and transition to a highly elastic rubbery state above the phase transition temperature t g. Self-actuating hinge structures made using shape memory alloys and shape memory polymers have been used in the aerospace field. The expansion device is made of legume pole type shape memory polymer and is heated and expanded by a heating film, the aerospace temperature control shutter mechanism based on shape memory polymer driving realizes reciprocating motion by using a shape memory polymer spring, and the paper 'analysis and simulation of micro thermal control shutter driver' discloses a micro thermal control shutter driver which uses thermoelectric refrigeration as a temperature control device and metal with high expansion coefficient as a movable part to realize opening and closing of a thermal control shutter.
The semiconductor refrigeration is to utilize P-N junction formed by special semiconductor material to form thermocouple pair, realize the initiative controllable heat flow transmission through electric current, as in the patent of the utility model with the application number of CN202221093197.4, the outer side surfaces of a plurality of heat conducting sheets and the outer side surfaces of a plurality of cold conducting sheets are provided with flexible heat conducting films, so that the semiconductor refrigeration sheet has good bending performance, can be attached to various terminal curved surfaces, and ensures the refrigeration effect.
The above patent or paper has the defects that for a one-way shape memory hinge, the original shape is recovered after the hinge is heated by a heating film, and the hinge cannot be folded and unfolded repeatedly, because the two-way shape memory material can respond to the excitation in real time, and for the two-way shape memory unfolding structure, the excitation condition of the shape memory material needs to be maintained, so that the maintenance of the shape needs to consume larger energy or only depends on the excitation of the external environment, and the active control of low energy consumption cannot be realized. Accordingly, the present invention provides a semiconductor-based dual-path shape memory hinge device.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a semiconductor temperature control-based double-pass shape memory hinge device and a use method thereof, wherein an alternating current or direct current is respectively supplied to a refrigerating semiconductor crystal grain in a temperature control semiconductor layer by adopting a multilayer composite structure of a shape memory alloy layer, a temperature control semiconductor layer and a shape memory polymer layer, and the characteristics of a shape memory material are utilized to repeatedly switch the hinge device from a furled state to an unfolded state and from the unfolded state to the folded state, so that the stable and controllable double-pass shape memory function is realized on the premise of not continuously supplying energy and maintaining the stimulation condition of the shape memory material, the energy consumption of the double-pass shape memory folding structure of a spacecraft is greatly reduced, and the utilization efficiency of the internal and external space of the spacecraft and the survivability of the folding mechanism in space are improved.
The invention provides a semiconductor temperature control-based double-pass shape memory hinge device which comprises an extension assembly and clamps, wherein the extension assembly is in a flat plate shape, and the clamps are symmetrically arranged on two sides of the extension assembly. The expansion assembly comprises a temperature control semiconductor layer and a shape memory material layer, wherein the shape memory material layer comprises a shape memory alloy layer and a shape memory polymer layer, the temperature control semiconductor layer is positioned between the shape memory alloy layer and the shape memory polymer layer, the temperature control semiconductor layer realizes active control of heat flow in the expansion assembly, so that the shape memory alloy and the shape memory polymer alternately realize a shape memory effect, the temperature control semiconductor layer comprises refrigeration semiconductor crystal grains, flexible heat insulation materials, copper sheets and flexible heat conduction materials, the refrigeration semiconductor crystal grains are in paired existence, the flexible heat insulation materials are arranged between the adjacent refrigeration semiconductor crystal grains, and the copper sheets positioned at two ends of the refrigeration semiconductor crystal grains are respectively connected with the joint surfaces of the shape memory alloy layer and the shape memory polymer layer through the flexible heat conduction materials. The refrigerating semiconductor crystal grains are distributed along the bending direction of the extension assembly at intervals of 1.3 mm-6.2 mm, and the refrigerating semiconductor crystal grains are distributed along the bending direction perpendicular to the extension assembly at intervals of 1 mm-4 mm, so that the filling rate and the refrigerating and heating power of the refrigerating semiconductor crystal grains are guaranteed. The bending neutral plane of the extension assembly is positioned in the temperature control semiconductor layer, and the strain expression of the shape memory alloy layer in the extension assembly is as follows:
Wherein ρ (t) is the bending radius of the bending neutral plane of the extension assembly, a is the thickness of the shape memory alloy layer, and b 1 is the distance from the bending neutral plane of the extension assembly to the bonding surface of the shape memory alloy layer;
The strain expression of the shape memory polymer layer in the extension assembly is:
Wherein ρ (t) is the bending radius of the bending neutral plane of the extension assembly, ρ is the bending radius of the extension assembly during manufacturing, c is the thickness of the shape memory polymer layer, b 1 is the distance from the bending neutral plane of the extension assembly to the bonding surface of the shape memory alloy layer, and b 2 is the distance from the bending neutral plane of the extension assembly to the bonding surface of the shape memory polymer layer.
The strain expression of the temperature control semiconductor layer in the extension assembly is as follows:
Wherein ρ (t) is the bending radius of the bending neutral plane of the extension assembly, ρ is the bending radius of the extension assembly during manufacturing, b 1 is the distance from the bending neutral plane of the extension assembly to the bonding surface of the shape memory alloy layer, and b 2 is the distance from the bending neutral plane of the extension assembly to the bonding surface of the shape memory polymer layer.
Preferably, the shape memory alloy layer has a maximum strain when the expansion assembly is in the collapsed state, and the specific expression is as follows:
Wherein a is the thickness of the shape memory alloy layer, b 1 is the distance from the bending neutral surface of the extension assembly to the bonding surface of the shape memory alloy layer, ρ 1 is the bending radius of the extension assembly in the unfolded state;
when the stretching assembly is in a stretching state, the temperature-control semiconductor layer has maximum strain, and the specific expression is as follows:
Wherein b 2 is the distance from the bending neutral surface of the extension assembly to the bonding surface of the shape memory polymer layer, ρ 1 is the bending radius of the extension assembly in the unfolded state, and ρ is the bending radius of the extension assembly during manufacturing;
the shape memory polymer layer has a maximum strain when the expansion assembly is in the expanded state, and the specific expression is as follows:
Wherein b 2 is the distance from the bending neutral plane of the extension assembly to the bonding plane of the shape memory polymer layer, c is the thickness of the shape memory polymer layer, ρ 1 is the bending radius of the extension assembly in the unfolded state, and ρ is the bending radius of the extension assembly in manufacturing.
Preferably, the bending radius ρ 1 of the extension assembly in the unfolded state is 6 mm-30 mm.
Preferably, the length of the refrigeration semiconductor crystal grain is 0.7-0.9 times of the thickness of the temperature control semiconductor layer, and the cross section of the refrigeration semiconductor crystal grain is a rectangle with a side length of 1 mm-3 mm.
Preferably, the temperature control system connected with the temperature control semiconductor layer is a driving chip of an H bridge formed by field effect transistors.
Preferably, the total thickness d of the extension assembly is 3-15mm.
Preferably, the shape memory alloy layer is one or more of Au-Cd、Ag-Cd、Cu-Zn、Cu-Zn-Al、Cu-Zn-Sn、Cu-Zn-Si、Cu-Sn、Cu-Zn-Ga、In-Ti、Au-Cu-Zn、Ni-Al、Fe-Pt、Ti-Ni、Ti-Ni-Pd、Ti-Ni-Zr、Ti-Nb、U-Nb or Fe-Mn-Si, the shape memory polymer layer is one or more of epoxy or cyanate shape memory polymer resin, and the refrigeration semiconductor crystal grain is one or more of PbTe, znSb, siGe, agSbTe, sb2Te3, sb2Se3, sb2Te, bi2Te3, sbI3, bi2Se3 or TeI 4.
In another aspect of the present invention, a method for using the aforementioned semiconductor temperature control-based two-way shape memory hinge device is provided, which includes the steps of:
S1, under the condition that the double-pass shape memory hinge device is in an initial furled state, alternating current is supplied to a refrigeration semiconductor crystal grain in a temperature control semiconductor layer, so that a shape memory alloy layer and a shape memory polymer layer which are respectively positioned at two ends of the refrigeration semiconductor crystal grain are heated until the temperatures of the shape memory alloy layer and the shape memory polymer layer are higher than the respective phase transition temperatures, and at the moment, the characteristics of the shape memory alloy and the shape memory polymer are respectively utilized to change the double-pass shape memory hinge device from the furled state to an unfolding state;
S2, under the unfolding state of the double-pass shape memory hinge device in the step S1, direct current is supplied to the refrigerating semiconductor crystal grain in the temperature control semiconductor layer, so that the shape memory alloy layer positioned at the first end of the refrigerating semiconductor crystal grain is heated, the temperature of the shape memory alloy layer is higher than the self phase transition temperature and kept in the unfolding state, and the shape memory polymer layer positioned at the second end of the refrigerating semiconductor crystal grain is cooled, and the temperature of the shape memory polymer layer is lower than the self phase transition temperature;
S3, on the basis of the step S2, stopping electrifying direct current to the refrigerating semiconductor crystal grains in the temperature control semiconductor layer, and at the moment, under the external environment, overcoming the resistance of the temperature control semiconductor layer by the shape memory alloy layer and the shape memory polymer layer, so that the two-way shape memory hinge device is changed from an unfolded state to a folded state and is maintained in the unfolded state to realize self-locking;
S4, when the double-pass shape memory hinge device is folded in a self-locking state, direct current with the opposite direction to the S2 is supplied to the refrigerating semiconductor crystal grain in the temperature control semiconductor layer, so that the shape memory polymer layer at the second end of the refrigerating semiconductor crystal grain is heated, the temperature of the shape memory polymer layer is higher than the self-phase transition temperature, the shape memory alloy layer at the first end of the refrigerating semiconductor crystal grain is cooled, the temperature of the shape memory alloy layer is lower than the self-phase transition temperature, the resistance of the temperature control semiconductor layer and the shape memory alloy layer is overcome by the shape memory polymer layer, and the double-pass shape memory hinge device is restored to the folded state from the self-locking unfolding state;
s5, stopping electrifying direct current to the refrigerating semiconductor crystal grains in the temperature control semiconductor layer when the double-pass shape memory hinge device is in the folded state in the step S4, and reducing the temperature of the shape memory polymer layer to be below the self phase transition temperature in the external environment at the moment so that the double-pass shape memory hinge device is maintained in the folded state and self locking is achieved.
Compared with the prior art, the invention has the following advantages:
1. Compared with the unfolding of a mechanical transmission structure, the invention does not need motor structure driving, has the characteristics of integration of driving and bearing, and can meet the functional requirements of small unfolding impact, light weight, small occupied space and self-locking realization of a folding device of a modern spacecraft.
2. Compared with the traditional shape memory hinge, the invention adopts a multi-layer composite structure of a shape memory material layer, a temperature control semiconductor layer and a shape memory material layer, and when the shape memory alloy and the shape memory polymer are used at the same time, the hinge can form strength complementation at low temperature and high temperature, and good strength is kept in the static state and the unfolding process of the hinge, so that the adaptability of the hinge to the severe environment of space temperature shock is improved, and the reliability of the spacecraft during launching and hinge unfolding is ensured.
3. The semiconductor refrigerating sheet is usually a rigid component because the ceramic sheet is used for conducting heat, and the ceramic is difficult to bear severe temperature change, so that cold and hot end exchange in a short time can not be realized. The temperature-control semiconductor layer is filled with the flexible heat-insulating material, does not need to use a ceramic plate for heat conduction, has the characteristics of high flexibility and high thermal resistance, controls the on-off and the direction of voltages at two ends of the semiconductor refrigerator in a PWM (pulse width modulation) adjustment mode, realizes controllable directional transmission of heat energy, and meets the functional requirements of double-pass shape memory and large deformation of the stretching device.
4. The invention uses the method of electrifying and heating the semiconductor refrigeration layer to replace the traditional method of attaching the flexible heating film to heat/refrigerate the shape memory material, realizes the stable and controllable double-pass shape memory function on the premise of not continuously supplying energy and maintaining the stimulating condition of the shape memory material, and greatly reduces the energy consumption of the double-pass shape memory folding and unfolding structure of the spacecraft.
5. The folding mechanism can be used for realizing the function of folding and unfolding the folding mechanism of the spacecraft for multiple times, and improves the utilization efficiency of the inner space and the outer space of the spacecraft and the survivability of the folding mechanism in space.
Drawings
FIG. 1 is an exploded view of a semiconductor temperature control based two-way shape memory hinge device according to the present invention;
FIG. 2 is a schematic drawing showing the folding of the two-way shape memory hinge device based on semiconductor temperature control according to the present invention;
FIG. 3 is a schematic step cross-sectional view of a semiconductor temperature control based two-way shape memory hinge device of the present invention;
FIG. 4 is a schematic cross-sectional view of a semiconductor temperature control based two-way shape memory hinge device according to the present invention;
FIG. 5 is a flow chart of a method of using the semiconductor temperature controlled dual-pass shape memory hinge device of the present invention.
The main reference numerals:
The expansion assembly 1, the temperature control semiconductor layer 11, the refrigeration semiconductor crystal grain 111, the flexible heat insulation material 112, the copper sheet 113, the flexible heat conduction material 114, the shape memory alloy layer 12, the shape memory polymer layer 13 and the fixture 2.
Detailed Description
In order to make the technical content, the structural features, the achieved objects and the effects of the present invention more detailed, the following description will be taken in conjunction with the accompanying drawings.
The semiconductor temperature control-based double-pass shape memory hinge device can realize double-pass shape memory function in a severe space environment, realize repeated controllable deformation of the extension assembly 1, and maintain the required environment response condition of double-pass shape memory without consuming additional energy. The specific structure of the device is shown in fig. 3 and 4, adopts a multi-layer structure of a shape memory alloy layer 12-a temperature control semiconductor layer 11-a shape memory polymer layer 13, and specifically comprises an extension assembly 1 and clamps 2, wherein the extension assembly 1 is in a flat plate shape, the clamps 2 are symmetrically arranged on two sides of the extension assembly 1, the clamps 2 are used for connecting the extension assembly 1 with a part of a spacecraft, which needs to be unfolded, and the extension assembly 1 can be used singly and can be connected through a plurality of serial connection and/or a plurality of parallel connection in a plurality of ways, and the adjacent extension assemblies 1 are connected through the clamps 2 on two sides.
Specifically, the clamp 2 and the extension assembly 1 are connected by means of adhesion, threads or the like, and the clamp 2 and the spacecraft are also connected by means of adhesion, threads or welding or the like, preferably by using bolts and nuts.
In a preferred embodiment of the present invention, the stretching assembly 1 comprises a temperature-controlling semiconductor layer 11 and two shape memory material layers, wherein the shape memory material layers can be single shape memory alloy, shape memory polymer or formed by combining the shape memory alloy and the shape memory polymer, and have different phase transition temperatures, the temperature-controlling semiconductor layer 11 is used for heating and/or cooling the shape memory material layers, and the phase transition temperature of the material in the shape memory alloy layer 12 is higher than the phase transition temperature of the material in the shape memory polymer layer 13.
The shape memory material layer comprises a shape memory alloy layer 12 and a shape memory polymer layer 13, the temperature control semiconductor layer 11 is positioned between the shape memory alloy layer 12 and the shape memory polymer layer 13, the temperature control semiconductor layer 11 heats or cools the shape memory material layers at two sides, active control of heat flow in the extension assembly 1 is realized, and the shape memory alloy and the shape memory polymer alternately realize a shape memory effect, so that repeated folding and unfolding of the shape memory hinge device are realized.
The temperature control semiconductor layer 11 comprises refrigeration semiconductor crystal grains 111, flexible heat insulation materials 112, copper sheets 113 and flexible heat conduction materials 114, the refrigeration semiconductor crystal grains 111 are in pairs, as the refrigeration semiconductor crystal grains 111 are made of hard and brittle materials and cannot deform to adapt to curvature change of the extension assembly 1, the flexible heat insulation materials 112 are arranged between the adjacent refrigeration semiconductor crystal grains 111, the copper sheets 113 at two ends of the refrigeration semiconductor crystal grains 111 are respectively connected with the joint surfaces of the shape memory alloy layer 12 and the shape memory polymer layer 13 through the flexible heat conduction materials 114, the copper sheets 111 ensure good electric conductivity of the refrigeration semiconductor crystal grains 111, and the two ends of the refrigeration semiconductor crystal grains 111 are connected with the shape memory alloy and the shape memory polymer through the flexible heat conduction materials 114 so as to ensure good thermal contact.
Specifically, the shape memory alloy layer 12 is one or more of Au-Cd、Ag-Cd、Cu-Zn、Cu-Zn-Al、Cu-Zn-Sn、Cu-Zn-Si、Cu-Sn、Cu-Zn-Ga、In-Ti、Au-Cu-Zn、Ni-Al、Fe-Pt、Ti-Ni、Ti-Ni-Pd、Ti-Ni-Zr、Ti-Nb、U-Nb or Fe-Mn-Si, the shape memory polymer layer 13 is one or more of epoxy or cyanate type shape memory polymer resins, and the refrigerating semiconductor crystal grain 11 is one or more of PbTe, znSb, siGe, agSbTe, sb2Te3, sb2Se3, sb2Te, bi2Te3, sbI3, bi2Se3 or TeI 4.
In the double-pass shape memory hinge device of the present invention, the initial shape of the shape memory alloy layer 12 is a planar plate, and the shape memory alloy layer 12 is loaded with a special clamp in a low temperature environment, at this time, martensite in the shape memory alloy is reoriented, and the twin martensite is converted into non-twin martensite, so that the shape memory alloy layer 12 is deformed into a curved plate with a curvature ρ under the action of residual strain. The initial shapes of the temperature control semiconductor layer 11 and the shape memory polymer layer 13 are curved plates with the curvature rho. The curved plates having the same curvature described above are bonded in this order with an adhesive in the order of the shape memory alloy layer 12, the temperature controlling semiconductor layer 11, and the shape memory polymer layer 13.
Further, in order to control the filling rate of the cooling semiconductor crystal grains 111 and the cooling/heating power, the cooling semiconductor crystal grains 111 are distributed at a pitch of 1.3mm to 6.2mm along the bending direction of the extension assembly 1, and the cooling semiconductor crystal grains 111 are distributed at a pitch of 1mm to 4mm in the bending direction perpendicular to the extension assembly 1.
It is found from the test that the elastic modulus of the shape memory alloy layer 12 at a low temperature (martensite) is 29.5GPa, the elastic modulus at a high temperature (austenite) is 74.4GPa, the elastic modulus of the shape memory polymer layer 13 at a low temperature (glassy state) is 3.85GPa, the elastic modulus at a high temperature (rubbery state) is 1.05GPa, and the elastic modulus of the flexible heat insulating material 112 is about 1GPa. Therefore, in a preferred embodiment of the present invention, the temperature-controlling semiconductor layer 11, the shape memory alloy layer 12 and the shape memory polymer layer 13 are arranged according to a thickness ratio of 1:5:7, so that the total thickness d of the final extension assembly 1 is 3mm to 15mm, and the bending radius ρ 1 of the extension assembly 1 in the unfolded state is 6mm to 30mm.
The temperature control system connected with the temperature control semiconductor layer 11 is a driving chip of an H bridge formed by field effect transistors. The on-off of the voltage across the refrigeration semiconductor die 111 is controlled by employing a pulse width modulation technique, i.e., PWM duty cycle adjustment.
The bending neutral plane of the extension assembly 1 is located inside the temperature-controlled semiconductor layer 11, and the strain expression of the shape memory alloy layer 12 in the extension assembly 1 is:
Where ρ (t) is the bending radius of the bending neutral plane of the expansion assembly 1, the bending radius ρ (t) varies with time, a is the thickness of the shape memory alloy layer 12, and b 1 is the distance from the bending neutral plane of the expansion assembly 1 to the bonding surface of the shape memory alloy layer 12.
The strain expression of the shape memory polymer layer 13 in the extension assembly 1 is:
Where ρ (t) is the bending radius of the bending neutral plane of the stretcher 1, the bending radius ρ (t) varies with time, ρ is the bending radius when the stretcher 1 is manufactured, c is the thickness of the shape memory polymer layer 13, b 1 is the distance from the bending neutral plane of the stretcher 1 to the bonding surface of the shape memory alloy layer 12, and b 2 is the distance from the bending neutral plane of the stretcher 1 to the bonding surface of the shape memory polymer layer 13.
The strain expression of the temperature-controlled semiconductor layer 11 in the extension assembly 1 is:
Where ρ (t) is the bending radius of the bending neutral plane of the stretcher 1, the bending radius ρ (t) varies with time, ρ is the bending radius when the stretcher 1 is manufactured, b 1 is the distance from the bending neutral plane of the stretcher 1 to the bonding surface of the shape memory alloy layer 12, and b 2 is the distance from the bending neutral plane of the stretcher 1 to the bonding surface of the shape memory polymer layer 13.
In the double-pass shape memory hinge device of the present invention, the tensile strain of the flexible heat insulating material 112 is required to be less than 25%, and the filling rate of the refrigerating semiconductor die 111 inside the temperature controlling semiconductor layer 11 in the folding and unfolding direction is required to be controlled to be less than 40% according to the strain expression of the temperature controlling semiconductor layer 11. Further, in order to ensure the unfolding rate and the structural reliability of the stretching assembly 1, the maximum refrigerating/heating power of the temperature-control semiconductor layer 11 is not less than 0.6w/cm <2 >, the length of the refrigerating semiconductor crystal grain 111 is 0.7-0.9, namely 0.8-5.2 mm, of the thickness of the temperature-control semiconductor layer 11, and the cross section of the refrigerating semiconductor crystal grain 111 is a rectangle with a side length of 1-3 mm.
In a preferred embodiment of the present invention, the shape memory alloy layer 12 has a maximum strain when the expansion assembly 1 is in the collapsed state, expressed as follows:
Where a is the thickness of the shape memory alloy layer 12, b 1 is the distance from the curved neutral plane of the expansion assembly 1 to the contact surface of the shape memory alloy layer 12, ρ 1 is the radius of curvature of the expansion assembly 1 in the expanded state.
When the stretching assembly 1 is in the stretched state, the temperature-controlled semiconductor layer 11 has the maximum strain, and the specific expression is as follows:
Where b 2 is the distance from the curved neutral plane of the stent 1 to the contact surface of the shape memory polymer layer 13, ρ 1 is the radius of curvature of the stent 1 in the deployed state, and ρ is the radius of curvature of the stent 1 during fabrication.
Meanwhile, the shape memory polymer layer 13 also has the maximum strain, and the specific expression is as follows:
Wherein b 2 is the distance from the curved neutral surface of the extension assembly 1 to the contact surface of the shape memory polymer layer 13, c is the thickness of the shape memory polymer layer 13, ρ 1 is the radius of curvature of the extension assembly 1 in the unfolded state, and ρ is the radius of curvature of the extension assembly 1 during manufacture.
Further, the main working principles of the materials used in the temperature-controlling semiconductor layer 11, the shape memory alloy layer 12 and the shape memory polymer layer 13 in the double-pass shape memory hinge device of the present invention are as follows:
The Shape Memory Polymer (SMP) in the shape memory polymer layer 13 is of a wide variety and mainly comprises thermotropic, photoinduced, electro-active, magneto-active and chemoinductive types. Wherein the thermoplastic shape memory polymer is in a high strength glassy state below the phase transition temperature t g and changes to a highly elastic rubbery state above the phase transition temperature t g. The thermoplastic shape memory polymer is heated above t g, loaded and cooled, at which point residual strain will occur and will disappear after reheating.
The Shape Memory Alloy (SMA) in the shape memory alloy layer 12 has two main metallographic phases, a low temperature martensite phase and a high temperature austenite phase. The shape memory alloy is loaded and unloaded at a low temperature, residual strain exists after unloading, and when the temperature of the shape memory alloy is raised and exceeds the austenite transformation temperature, the residual strain disappears, and the alloy returns to the original shape. The Brinson model describing its macroscopic unique morphology is as follows:
σ-σ0＝E(ε-ε0)+ΩS(ξS-ξS0)+ΩT(ξT-ξT0)+Θ(T-T0)
Wherein σ, σ 0 is the stress and initial stress of the SMA, ε 0 is the strain and initial strain of the SMA, T 0 is the temperature and initial temperature of the SMA, ζ S,ξS0 is the martensite content and initial content caused by the stress, ζ T,ξT0 is the martensite content and initial content caused by the temperature, E is the elastic modulus of the SMA, Ω S,ΩT is the phase transition modulus caused by the stress and the temperature, and Θ is the thermal elastic modulus.
Since the thermal elastic modulus is much smaller than the phase change modulus, the Brinson model can be simplified to:
σ=[ξEM+(1-ξ)EA](ε-εLξ)
ξ=ξS+ξT
wherein E M is the pure martensite elastic modulus, E A is the pure austenite elastic modulus, and epsilon L is the SMA maximum residual strain.
The temperature-controlling semiconductor layer 11 adopts a semiconductor refrigeration technology, which is also called a thermoelectric refrigeration technology, and the working principle of the temperature-controlling semiconductor layer is mainly the Peltier effect. When direct current passes through a loop formed by two different conductive materials, an endothermic or exothermic phenomenon occurs at the junction. When the direction of the current is changed, the direction of heat conduction is also changed. In the prior art, semiconductor crystal grains are mainly adhered between two pieces of ceramics in pairs, so that heat conduction is realized.
Compared with the traditional mechanical stretching device, the structure of the double-way shape memory hinge device has the advantages of small weight, easy realization of self-locking and self-unfolding functions, small unfolding impact and high rigidity. The invention breaks through the limitation that the deformation of the prior double-pass shape memory material needs to be maintained by external stimulus, can change the current direction of the semiconductor to control the temperature of each shape memory material layer, and realizes the repeated controllable deformation of the extension assembly. The invention can realize the double-pass shape memory function in the severe space environment, greatly reduces the energy source required by realizing the double-pass shape memory in the aerospace field, and provides a new thought for the space folding and unfolding mechanism.
The following describes a method for using the semiconductor temperature control-based two-way shape memory hinge device according to the embodiments:
In this embodiment, T 0 represents the equilibrium temperature of the external environment, T 1 represents the phase transition temperature of the shape memory polymer, and T 2 represents the phase transition temperature of the shape memory alloy. In the initial state, the temperature of the shape memory alloy layer 12 and the temperature of the shape memory polymer layer 13 are both the ambient equilibrium temperature T 0, the shape memory alloy layer 12 is in the martensitic state, and the shape memory polymer layer 13 is in the glassy state.
The use method of the double-path shape memory hinge device based on semiconductor temperature control is shown in fig. 5, wherein the state A in fig. 5 is an initial state, the state B is a furled state, the state C is an unfolded state, the states of materials in each stage are shown in table 1, and the method specifically comprises the following steps:
S1, in an initial folded state of the double-path shape memory hinge device, as shown in FIG. 2, alternating current is supplied to a refrigeration semiconductor crystal grain 111 in a temperature control semiconductor layer 11, so that a shape memory alloy layer 12 and a shape memory polymer layer 13 respectively positioned at two ends of the refrigeration semiconductor crystal grain 111 are heated until the shape memory alloy layer 12 reaches a phase transition temperature T 2, the shape memory polymer layer 13 reaches a phase transition temperature T 1, at the moment, the shape memory alloy is transformed from martensite to austenite, the elastic modulus rises and returns to an initial shape, the shape memory polymer is transformed into a rubber state, the elastic modulus drops rapidly, and the resistance of the temperature control semiconductor layer 11 and the shape memory polymer layer 13 is overcome by the shape memory alloy layer 12, so that the hinge device is changed from the folded state to an unfolded state.
S2, in the unfolded state of the two-way shape memory hinge device in the step S1, as shown in FIG. 1, direct current is supplied to the refrigeration semiconductor crystal grain 111 in the temperature control semiconductor layer 11, so that the shape memory alloy layer 12 positioned at the first end of the refrigeration semiconductor crystal grain 111 is heated, at this time, the temperature of the shape memory alloy layer 12 reaches the phase transition temperature T 2 and keeps in the unfolded state, so that the shape memory polymer layer 13 positioned at the second end of the refrigeration semiconductor crystal grain 111 is cooled, at this time, the temperature of the shape memory polymer layer 13 is lower than the phase transition temperature T 1, and the glass state is converted into a high-strength glass state.
S3, on the basis of the step S2, the direct current is stopped to be applied to the refrigerating semiconductor crystal grain 111 in the temperature control semiconductor layer 11, at the moment, under the balance temperature T 0 of the external environment, each part of the extension assembly 1 radiates to the external environment to slowly cool down to the balance temperature T 0, the shape memory alloy is converted into martensite, the resistance of the temperature control semiconductor layer 11 is overcome by the shape memory alloy layer 12 and the shape memory polymer layer 13, the double-pass shape memory hinge device is maintained in an unfolding state to realize self-locking, and the double-pass shape memory hinge device in the state can be maintained for a long time without energy supply.
S4, when the double-path shape memory hinge device is in an unfolded state and needs to be folded, direct current with the opposite direction to the S2 is supplied to the refrigeration semiconductor crystal grain 111 in the temperature control semiconductor layer 11, so that the shape memory polymer layer 13 positioned at the second end of the refrigeration semiconductor crystal grain 111 is heated, the temperature of the shape memory polymer layer 13 is higher than the phase transition temperature T 1, the shape memory polymer is in a rubber state and has larger recoverable strain, the shape memory alloy layer 12 positioned at the first end of the refrigeration semiconductor crystal grain 111 is cooled, the temperature of the shape memory alloy layer 12 is lower than the phase transition temperature T 2, the shape memory alloy is martensitic, the elastic modulus is smaller and can have larger residual strain, and the resistance of the temperature control semiconductor layer 11 and the shape memory alloy layer 12 is overcome by the shape memory polymer layer 13, so that the residual strain is slowly eliminated, and the double-path shape memory hinge device is recovered from the self-locking unfolded state to the folded state.
S5, under the condition that the double-pass shape memory hinge device is in the folded state of the step S5, the electrifying direct current to the refrigerating semiconductor crystal grain 111 in the temperature control semiconductor layer 11 is stopped, at the moment, under the equilibrium temperature T 0 of the external environment, the shape memory polymer layer 13 radiates to the external environment to slowly cool to below the phase transition temperature T 1, further cool to the equilibrium temperature T 0, and the shape memory polymer is converted into a high-strength glass state, so that the double-pass shape memory hinge device is maintained in the folded state and self-locking is realized.
If the two-way shape memory hinge device needs to be unfolded and folded again, repeating S1 to S5.
Table 1 two-way shape memory hinge device states at various stages
In the technical field of aerospace, compared with the traditional mechanical stretching device, the double-way shape memory hinge device can effectively reduce the weight of the folding and unfolding device, can realize the self-locking and self-unfolding functions, adopts a composite structure of shape memory alloy and shape memory polymer, can realize the strength complementation of the shape memory hinge at each temperature, has larger damping in the unfolding process and smaller unfolding impact, can be used for connecting external components of a spacecraft, and realizes the repeated folding and unfolding functions.
The above examples are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solution of the present invention should fall within the scope of protection defined by the claims of the present invention without departing from the spirit of the present invention.
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