CN115939238B - Heterogeneous infrared SAM-APD material, heterogeneous infrared SAM-APD and preparation method thereof - Google Patents

Abstract

The present application provides a heterogeneous infrared SAM‑APD material, a heterogeneous infrared SAM‑APD and a preparation method thereof. The heterogeneous infrared SAM‑APD material comprises a III‑V absorption layer, a Si multiplication structure layer and a III‑V vertical superlattice buffer layer arranged between the III‑V absorption layer and the Si multiplication structure layer. The preparation method of the heterogeneous infrared SAM‑APD: Si is doped by ion implantation technology to obtain a Si multiplication structure layer; a III‑V vertical superlattice buffer layer and a III‑V absorption layer are sequentially epitaxially grown on the surface of the Si multiplication structure layer; an etching pattern is prepared by ultraviolet lithography technology, and an APD mesa structure is etched using an inductively coupled plasma device to obtain a heterogeneous infrared SAM‑APD. The heterogeneous infrared SAM‑APD material provided in the present application realizes the expansion of the APD operating wavelength and the improvement of the gain performance, and is easy to realize integration on a silicon substrate.

Description

Heterogeneous infrared SAM-APD material, heterogeneous infrared SAM-APD and preparation method thereof

Technical Field

The present application relates to the field of semiconductor materials, and in particular to a heterogeneous infrared SAM-APD material, a heterogeneous infrared SAM-APD and a preparation method thereof.

Background Art

Avalanche photodiodes (APDs) are typical representatives of fast, high-gain detectors, especially infrared APDs, which play an important role in both military and civilian optoelectronic devices. At the same time, silicon-based optoelectronic integration is the most promising direction in today's information technology. It is considered to be the key to solving the current bottleneck problem of electronic devices and has broad application prospects in laser communications, optical interconnection, and 5G. At present, the performance of silicon-based infrared lasers and waveguide devices has basically reached commercial standards, while the research on infrared detection devices is still insufficient, which has become an important factor restricting the development of silicon-based optoelectronic technology. Therefore, research on infrared APD devices compatible with silicon-based technology is of great significance to the development of silicon-based integrated systems and the innovation of optoelectronic devices.

At present, silicon APD has the advantages of high gain and low noise, and is an important visible light detector. However, due to the limitation of Si bandgap width, its operating wavelength is only 400-1000nm, which cannot cover the infrared band, severely limiting its application range, especially in the field of laser communication in the 1.3μm and 1.55μm bands. InGaAs/InP-based APD has performance gaps in noise and bandwidth compared with Si APD, and is particularly difficult to integrate with silicon-based electronic devices.

Summary of the invention

The purpose of the present application is to provide a heterogeneous infrared SAM-APD (absorption multiplication separation avalanche photodiode) material, a heterogeneous infrared SAM-APD and a preparation method thereof to solve the above-mentioned problems.

To achieve the above objectives, this application adopts the following technical solutions:

A heterogeneous infrared SAM-APD material comprises a III-V group absorption layer, a Si multiplication structure layer and a III-V group vertical superlattice buffer layer arranged between the III-V group absorption layer and the Si multiplication structure layer.

Preferably, the III-V group absorption layer comprises an InGaAs absorption layer and an InGaAs contact layer, and the InGaAs absorption layer is adjacent to the III-V group vertical superlattice buffer layer;

The Si multiplication structure layer includes a Si contact layer, a Si multiplication layer and a Si charge layer which are stacked in sequence, and the Si charge layer is adjacent to the III-V group vertical superlattice buffer layer.

Preferably, the Si contact layer is heavily doped n-type Si, the Si multiplication layer is intrinsically doped Si, and the Si charge layer is heavily doped p-type Si.

Preferably, the III-V group vertical superlattice buffer layer is an InAs/GaSb II type vertical superlattice buffer layer or an InAs/InAsSb II type vertical superlattice buffer layer, the InAs/GaSb II type vertical superlattice buffer layer comprises a GaSb buffer layer, a GaSb layer and an InAs layer stacked in sequence, and the InAs/InAsSb II type vertical superlattice buffer layer comprises a GaAs buffer layer, an InAs layer and an InAsSb layer stacked in sequence.

Preferably, the III-V group vertical superlattice buffer layer is an InAs/GaInSbⅡ type vertical superlattice buffer layer, and the InAs/GaInSbⅡ type vertical superlattice buffer layer comprises a GaAs layer, a GaSb buffer layer, an InAs layer and a GaInSb layer which are stacked in sequence.

The present application also provides a heterogeneous infrared SAM-APD, the raw materials of which include the heterogeneous infrared SAM-APD material.

The present application also provides a method for preparing the heterogeneous infrared SAM-APD, comprising:

Doping Si by ion implantation technology to obtain the Si multiplication structure layer;

Epitaxially growing a III-V vertical superlattice buffer layer and a III-V absorption layer in sequence on the surface of the Si multiplication structure layer;

The etching pattern is made by using ultraviolet photolithography technology, and the APD table structure is etched by using inductively coupled plasma equipment to obtain the heterogeneous infrared SAM-APD.

Compared with the prior art, the beneficial effects of this application include:

The heterogeneous infrared SAM-APD material provided by this application organically combines the infrared absorption characteristics of InGaAs and the advantages of high gain and low noise of Si. InGaAs is used as the absorption layer to expand the working wavelength of the detector; Si is used as the multiplication layer to ensure the avalanche and noise characteristics of the detector. At the same time, it has the excellent multiplication characteristics of Si and the absorption capacity of the infrared band of InGaAs. More importantly, it is easy to realize integration on a silicon substrate and has distinctive characteristics. The III-V vertical superlattice buffer layer structure is used to suppress the generation and propagation of defects, and the periodic lateral strain is used to reduce the penetration depth of defects, so as to achieve the purpose of reducing the defect density in the heterojunction epitaxial structure layer and improve the carrier separation and transmission efficiency; the defects in each layer of the APD act as recombination centers to reduce the separation efficiency of photogenerated carriers, and at the same time, the interface energy band of the absorption-multiplication layer also reduces the transmission characteristics of carriers. The conventional method of inserting a component gradient layer can only solve the problem of carrier transport but cannot improve the carrier separation efficiency. The III-V vertical superlattice buffer layer structure has the spatial separation characteristics of type II band electron-hole wave functions and provides an independent electron-hole transport channel, which can achieve the purpose of improving carrier separation efficiency and enhancing transport performance.

The heterogeneous infrared SAM-APD provided in this application greatly expands the spectral range (1.1 μm-10 μm) and the response spectrum range.

The preparation method of the heterogeneous infrared SAM-APD provided in the present application has a simple process and can be applied in large-scale production.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope of the present application.

FIG1 is a schematic diagram of the structure of a heterogeneous infrared SAM-APD material provided in the present application;

FIG2 is a schematic diagram of the energy band structure of a heterogeneous infrared SAM-APD;

FIG3 is a schematic diagram of the structure of a heterogeneous infrared SAM-APD material provided in an embodiment;

FIG4 is a TEM image of the InAs/GaSb II-type vertical superlattice buffer layer provided in Example 1;

FIG5 is another TEM image of the InAs/GaSb II-type vertical superlattice buffer layer provided in Example 1;

FIG6 is an XRD diagram of the InAs/GaSb II-type vertical superlattice buffer layer provided in Example 1;

FIG. 7 is a PL image of an InAs/GaSb II-type vertical superlattice buffer layer provided in Example 1; FIG. 8 is a PL image of an InAs/GaInSb II-type vertical superlattice buffer layer provided in Example 2;

FIG9 is a PL image of the InAs/InAsSbⅡ type vertical superlattice buffer layer provided in Example 3;

FIG. 10 is a schematic diagram of a conventional superlattice buffer layer structure provided in Comparative Example 1.

Reference numerals:

100-Si contact layer; 200-Si multiplication layer; 300-Si charge layer; 400-III-V vertical superlattice buffer layer; 500-InGaAs absorption layer; 600-InGaAs contact layer.

DETAILED DESCRIPTION

As used herein:

"Prepared from" is synonymous with "comprising." As used herein, the terms "comprising," "including," "having," "containing," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises the listed elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.

The conjunction "consisting of excludes any unspecified element, step, or component. If used in a claim, this phrase renders the claim closed-ended so that it does not include materials other than those described, except for conventional impurities associated therewith. When the phrase "consisting of" appears in a clause of the body of a claim rather than immediately following the subject matter, it limits only the elements described in that clause; other elements are not excluded from the claim as a whole.

When an amount, concentration, or other value or parameter is expressed as a range, a preferred range, or a range defined by a series of upper preferred values and lower preferred values, this should be understood as specifically disclosing all ranges formed by any pairing of any range upper limit or preferred value with any range lower limit or preferred value, regardless of whether the range is disclosed separately. For example, when a range of "1 to 5" is disclosed, the described range should be interpreted as including ranges "1 to 4", "1 to 3", "1 to 2", "1 to 2 and 4 to 5", "1 to 3 and 5", etc. When a numerical range is described in this article, unless otherwise stated, the range is intended to include its end values and all integers and fractions within the range.

In these examples, parts and percentages are by mass unless otherwise indicated.

"Parts by mass" refers to the basic unit of measurement for expressing the mass ratio of multiple components. 1 part can represent any unit mass, such as 1g or 2.689g. If we say that the mass of component A is a parts and the mass of component B is b parts, it means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it means that the mass of component A is aK and the mass of component B is bK (K is an arbitrary number, indicating a multiple factor). It should not be misunderstood that, unlike the mass parts, the sum of the mass of all components is not limited to 100 parts.

"And/or" is used to indicate that one or both of the stated situations may occur, for example, A and/or B includes (A and B) and (A or B).

A heterogeneous infrared SAM-APD material comprises a III-V group absorption layer, a Si multiplication structure layer and a III-V group vertical superlattice buffer layer arranged between the III-V group absorption layer and the Si multiplication structure layer.

The difficulty in the study of InGaAs/Si infrared APD lies in the preparation of high-quality heterogeneous materials. This application proposes to combine silicon-based epitaxial III-V infrared semiconductor materials with silicon. By combining with Si through chemical bonds, the efficient transmission of carriers between heterogeneous materials can be guaranteed, which is also the basis for realizing InGaAs/Si heterogeneous infrared APD. The high-quality heteroepitaxiality of the absorption layer on the Si multiplication layer and the efficient transmission of carriers between the absorption layer and the multiplication layer have become the focus of research. Therefore, reducing the defect density of the epitaxial layer, inhibiting the propagation of defects, reducing the recombination efficiency of photogenerated carriers, and improving the transmission efficiency of electrons and holes have become the key issues that need to be solved in the study of InGaAs/Si heterogeneous infrared APD.

In view of the above-mentioned key points and difficulties, this application designs a new type of InGaAs/Si heterogeneous infrared SAM-APD structure based on the working principle of SAM-APD and the idea of using Si and InGaAs materials for the multiplication layer and the absorption layer respectively. A vertically distributed III-V superlattice layer is inserted between InGaAs and Si, and the lateral strain in the vertically distributed superlattice structure is used to suppress the propagation of defects in the epitaxial process, effectively reducing the defect density and the efficiency of photogenerated carrier scattering; at the same time, the characteristics of the spatial separation of electron and hole wave functions in the superlattice type II energy band are used to reduce the carrier recombination efficiency, and an independent electron-hole high-speed transmission channel is formed to improve the separation and transmission efficiency of carriers, and finally obtain a high-performance InGaAs/Si heterogeneous infrared APD. Its basic structure is shown in Figure 1, and the schematic diagram of the heterogeneous infrared SAM-APD energy band structure is shown in Figure 2.

In an optional embodiment, the III-V group absorption layer includes an InGaAs absorption layer and an InGaAs contact layer, and the InGaAs absorption layer is adjacent to the III-V group vertical superlattice buffer layer;

The Si multiplication structure layer includes a Si contact layer, a Si multiplication layer and a Si charge layer which are stacked in sequence, and the Si charge layer is adjacent to the III-V group vertical superlattice buffer layer.

In an optional embodiment, the Si contact layer is heavily doped n-type Si, the Si multiplication layer is intrinsically doped Si, and the Si charge layer is heavily doped p-type Si.

In an optional embodiment, the III-V group vertical superlattice buffer layer is an InAs/GaSb II type vertical superlattice buffer layer or an InAs/InAsSb II type vertical superlattice buffer layer, the InAs/GaSb II type vertical superlattice buffer layer includes a GaSb buffer layer, a GaSb layer and an InAs layer stacked in sequence, and the InAs/InAsSb II type vertical superlattice buffer layer includes a GaAs buffer layer, an InAs layer and an InAsSb layer stacked in sequence.

The InAs/GaSb II vertical superlattice buffer layer or the InAs/InAsSb II vertical superlattice buffer layer is lattice-matched with the adopted InGaAs absorption layer, has no stress, has a lower Auger recombination rate, flexibility in bandgap adjustment and higher material uniformity, and realizes the separation of electrons and holes.

In an optional embodiment, the III-V group vertical superlattice buffer layer is an InAs/GaInSbⅡ type vertical superlattice buffer layer, and the InAs/GaInSbⅡ type vertical superlattice buffer layer includes a GaAs layer, a GaSb buffer layer, an InAs layer and a GaInSb layer stacked in sequence.

Sb-based strained layer superlattice (SLS) materials have the advantage of tunable direct band gap, InSb, InAsSb and InGaAs lattice matching, and InAs-based type-II structures, such as InAs/InAsSb superlattices (SLs), provide significant flexibility in designing the band structure and can suppress Auger recombination.

The present application also provides a heterogeneous infrared SAM-APD, the raw materials of which include the heterogeneous infrared SAM-APD material.

The present application also provides a method for preparing the heterogeneous infrared SAM-APD, comprising:

Doping Si by ion implantation technology to obtain the Si multiplication structure layer;

Epitaxially growing a III-V vertical superlattice buffer layer and a III-V absorption layer in sequence on the surface of the Si multiplication structure layer;

The etching pattern is made by using ultraviolet photolithography technology, and the APD table structure is etched by using inductively coupled plasma equipment to obtain the heterogeneous infrared SAM-APD.

The embodiments of the present application will be described in detail below in conjunction with specific examples, but it will be appreciated by those skilled in the art that the following examples are only used to illustrate the present application and should not be considered as limiting the scope of the present application. If specific conditions are not specified in the examples, they are carried out according to normal conditions or the conditions recommended by the manufacturer. If the manufacturer is not specified in the reagents or instruments used, they are all conventional products that can be purchased commercially.

Example 1

As shown in FIG. 3 , this embodiment provides a heterogeneous infrared SAM-APD material, which includes, from bottom to top, a Si contact layer 100 , a Si multiplication layer 200 , a Si charge layer 300 , a III-V vertical superlattice buffer layer 400 , an InGaAs absorption layer 500 and an InGaAs contact layer 600 .

The Si contact layer 100 is heavily doped n-type Si, the Si multiplication layer 200 is intrinsically doped Si, and the Si charge layer 300 is heavily doped p-type Si.

The III-V group vertical superlattice buffer layer 400 is an InAs/GaSb II type vertical superlattice buffer layer. The InAs/GaSb II type vertical superlattice buffer layer includes a GaSb layer and an InAs layer stacked in sequence.

The above heterogeneous infrared SAM-APD material is used to prepare heterogeneous infrared SAM-APD.

The preparation method of the heterogeneous infrared SAM-APD is as follows:

1. Si is doped by ion implantation technology. Si substrates of different crystal phases are treated by ion implantation. Parameters such as the injection power and time of B and P are adjusted to obtain heavily doped n-type Si as Si contact layer 100, heavily doped p-type Si as Si charge layer 300, and intrinsically doped Si as Si multiplication layer 200.

2. Epitaxially grow an InAs/GaSb II type vertical superlattice buffer layer on the Si multiplication layer 200:

First, a 250nm GaSb buffer layer is grown. The purpose of growing the buffer layer is to obtain a better surface.

Then, InAs/GaSb superlattice structure material is grown heteroepitaxially on the GaSb buffer layer. The growth chamber temperature is about 500℃, the growth rate of GaSb layer is controlled at 0.5ML/s, and the growth rate of InAs layer is about 0.1ML/s. The beam ratio of III-V elements is 3:1.

The InAs/GaSb superlattice with the required thickness is obtained by alternating growth. The TEM images of the InAs/GaSb II type vertical superlattice buffer layer are shown in FIGS. 4 and 5 , the XRD image is shown in FIG. 6 , and the PL image is shown in FIG. 7 .

3. The InGaAs absorption layer 500 and the InGaAs contact layer 600 are grown sequentially on the InAs/GaSb II type vertical superlattice buffer layer using molecular beam epitaxy technology.

4. Finally, ultraviolet lithography is used to make the etching pattern, and the APD mesa structure is etched using inductively coupled plasma (ICP) equipment.

Example 2

Different from the embodiment 1, the III-V vertical superlattice buffer layer 400 is an InAs/GaInSbⅡ type vertical superlattice buffer layer. The InAs/GaInSbⅡ type vertical superlattice buffer layer includes a stacked GaAs layer, a GaSb buffer layer, an InAs layer and a GaInSb layer.

The preparation method of the InAs/GaInSbⅡ type vertical superlattice buffer layer is as follows: the arsenic source and the antimony source are respectively provided by a cracking furnace with a valve, and the valve is controlled by a pneumatic switch with a response time of 0.1s. The growth conditions are as follows: the growth temperature is 385-395℃, the V/III beam ratio is 5.7:1-8.7:1, and the layer thickness ratio is 1-2.5.

First, a GaAs layer of a certain thickness is epitaxially grown, then a GaSb buffer layer is grown, and finally an InAs/GaInSb superlattice is alternately grown. The PL image of the resulting InAs/GaInSb type II vertical superlattice buffer layer is shown in FIG8 .

Example 3

Different from the embodiment 1, the III-V group vertical superlattice buffer layer 400 is an InAs/InAsSb type II vertical superlattice buffer layer. The InAs/InAsSb type II vertical superlattice buffer layer includes a stacked GaAs buffer layer, an InAs layer and an InAsSb layer.

The preparation method of the InAs/InAsSbⅡ type vertical superlattice buffer layer is as follows:

The molecular beam epitaxy equipment is used, and the growth parameters include: when the substrate temperature is 460°C and the III/V beam ratio is 1:5, the GaAs buffer layer is grown first and then the InAs layer is grown: first turn on the In source and As source, turn on the In source and As source for 30 seconds, and then turn off the In source and As source. Then grow the InAsSb layer: first turn on the In source and As source, control the migration time of InAs on the substrate to 0-1S, and the migration speed to 0.5ML/S. When the coverage of InAs on the substrate is 70%, turn off the In source and As source, and extract the residual As atmosphere in the reaction chamber at the same time; turn on the In source and Sb source, control the migration time of InSb on the substrate to 0-1S, and the migration speed to 0.5ML/S. When the coverage of InSb on the substrate is 30%, turn off the In source and Sb source, and extract the residual Sb atmosphere in the reaction chamber at the same time, so as to stop the growth of a single-molecule layer of InAsSb layer.

(3) Repeat the above process until the desired thickness is reached. This completes the growth of the InAs/InAsSb II superlattice.

The PL image of the obtained InAs/InAsSbⅡ type vertical superlattice buffer layer is shown in Figure 9.

Comparative Example 1

In this comparative example, a conventional lateral arrangement rather than the innovative vertical arrangement of III-V group superlattice buffer layer provided in the present application is grown.

Its main features and steps are as follows: molecular beam epitaxy is used to sequentially grow a monolayer of the first material and a monolayer of the second material on the steps of the substrate, the monolayer of the first material and the monolayer of the second material together cover each step, and then the monolayer of the first material and the monolayer of the second material are repeatedly grown until the required thickness is reached. However, this traditional superlattice buffer layer will produce strain, and the resulting lattice mismatch will lead to dislocation defects in the process of carrier propagation. Obviously, if the superlattice buffer layer is not added to the traditional structure, it will significantly affect the transmission of carriers, thereby affecting the sensitivity of the detector and reducing the performance of the detector. Its structural diagram is shown in Figure 10.

As a typical III-V group direct bandgap semiconductor material, InGaAs has the characteristics of high quantum efficiency and high electron mobility, and has an adjustable bandgap and good stability. Therefore, using InGaAs as an absorption layer can improve the response wavelength range of the detector. If it is replaced with other absorption layers, it will lead to consequences such as a smaller detection range and worse stability.

Silicon (Si) is transparent in the infrared range (1310nm~1550nm). An effective method is to combine the Si multiplication layer with the InGaAs absorption layer, which will organically combine the infrared absorption characteristics of InGaAs with the advantages of high gain and low noise of Si. If the Si multiplication layer is missing, the multiplication characteristics cannot be guaranteed, thus affecting the efficiency of the detector.

In this application, the organic combination of the infrared absorption characteristics of InGaAs and the advantages of high gain and low noise of Si will be an ideal solution for realizing high-performance infrared APD. This solution can not only meet the requirements of silicon-based optoelectronic integration, but also achieve the expansion of APD working wavelength and improvement of gain performance. According to the working principle of APD, the absorption multiplication separation avalanche photodiode (SAM-APD) is an ideal device structure for realizing this solution, that is, InGaAs is used as the absorption layer to expand the working wavelength of the detector; Si is used as the multiplication layer to ensure the avalanche and noise characteristics of the detector. The InGaAs/Si heterogeneous infrared APD structure we designed has both the excellent multiplication characteristics of Si and the absorption capacity of InGaAs in the infrared band. More importantly, it is easy to realize on-chip integration of silicon substrates and has distinctive characteristics.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

In addition, those skilled in the art will appreciate that, although some embodiments herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the above claims, any one of the claimed embodiments may be used in any combination. The information disclosed in this background technology section is intended only to deepen the understanding of the overall background technology of the present application and should not be regarded as an admission or in any form of implication that the information constitutes prior art known to those skilled in the art.

Claims (3)

1. The heterogeneous infrared SAM-APD material is characterized by comprising a III-V absorption layer, a Si multiplication structure layer and a III-V vertical superlattice buffer layer arranged between the III-V absorption layer and the Si multiplication structure layer;

The III-V group absorption layer consists of an InGaAs absorption layer and an InGaAs contact layer, and the InGaAs absorption layer is adjacent to the III-V group vertical superlattice buffer layer;

The Si multiplication structure layer consists of an Si contact layer, an Si multiplication layer and an Si charge layer which are sequentially stacked, and the Si charge layer is adjacent to the III-V group vertical superlattice buffer layer;

the Si contact layer is heavily doped n-type Si, the Si multiplication layer is intrinsically doped Si, and the Si charge layer is heavily doped p-type Si;

the III-V group vertical superlattice buffer layer is an InAs/GaSb II type vertical superlattice buffer layer or an InAs/InAsSb II type vertical superlattice buffer layer, the InAs/GaSb II type vertical superlattice buffer layer comprises a GaSb buffer layer, a GaSb layer and an InAs layer which are sequentially stacked, and the InAs/InAsSb II type vertical superlattice buffer layer comprises a GaAs buffer layer, an InAs layer and an InAsSb layer which are sequentially stacked; or alternatively

The III-V group vertical superlattice buffer layer is an InAs/GaInSb II type vertical superlattice buffer layer, and the InAs/GaInSb II type vertical superlattice buffer layer comprises a GaAs layer, a GaSb buffer layer, an InAs layer and a GaInSb layer which are sequentially stacked.

2. A heterogeneous infrared SAM-APD, characterized in that its starting material comprises the heterogeneous infrared SAM-APD material of claim 1.

3. A method of making a heterogeneous infrared SAM-APD of claim 2, comprising:

Doping Si by an ion implantation technology to obtain the Si multiplication structure layer;

Sequentially epitaxially growing a III-V group vertical superlattice buffer layer and a III-V group absorption layer on the surface of the Si multiplication structure layer;

and manufacturing an etching pattern by adopting an ultraviolet lithography technology, and etching an APD mesa structure by utilizing inductive coupling plasma equipment to obtain the heterogeneous infrared SAM-APD.