CN115911138A - Packaging structure, packaging method and display device - Google Patents

Abstract

The application discloses a packaging structure, a packaging method and a display device. The packaging structure uses an organic packaging layer embedded with a heat dissipation part for the packaging structure. The phase change material layer in the heat dissipation part can undergo a phase change to absorb Part of the heat generated when the encapsulated optoelectronic device is working prevents the temperature of the device from being too high and affects the performance of the device; on the other hand, since the heat dissipation part is embedded in the organic packaging layer, it will not change the characteristics of the organic packaging material. It can take into account the heat dissipation effect and the film-forming quality of the organic packaging layer, without affecting its characteristics as a planarization layer, and will not adversely affect the process of the organic packaging layer and the light output of the device; in addition, embedded in the organic packaging layer The heat dissipation part in it can block water and oxygen, which can improve the water and oxygen blocking effect of the organic encapsulation layer.

Description

Packaging structure, packaging method and display device

technical field

The present application relates to the field of display technology, and in particular to a packaging structure, a packaging method and a display device.

Background technique

Optoelectronic devices are semiconductor devices based on organic or inorganic materials, which have a wide range of applications in new energy, sensing, communication, display, lighting and other fields, such as solar cells, photodetectors, organic light-emitting diodes (Organic Light-Emitting Diode, OLED) , Quantum Dot Light Emitting Diodes (QLED), etc. The functional layer materials in the photoelectric device structure are very sensitive to pollutants, water, oxygen, etc. in the atmosphere, and are easily eroded by the external environment without isolation protection, which seriously affects the service life of the photoelectric device. Therefore, optoelectronic devices have higher packaging requirements in practical applications to ensure that the devices have a longer service life.

Thin-Film Encapsulation (TFE) is one of the mainstream packaging technologies for optoelectronic devices at present. Its packaging structure is composed of overlapping and repeated inorganic packaging layers and organic packaging layers. The inorganic packaging layer is a water-oxygen barrier layer, and the organic packaging layer is Planarization layer. Among them, the inorganic packaging layer uses inorganic materials such as Al ₂ O ₃ , SiO _x , SiN _x as the water and oxygen barrier layer, and the organic packaging layer is a polymer film layer of acrylic resin monomer or epoxy resin monomer, which is suitable for large-scale and Fabrication of flexible devices.

However, thin-film packaging technology still faces many problems. For example, due to the characteristics of the material itself, the organic packaging layer has poor high temperature resistance and heat dissipation performance. Therefore, the existing thin-film packaging technology needs to be further developed.

Contents of the invention

The present application provides a package structure, a package method and a display device, aiming at improving the heat dissipation performance of the package structure.

In the first aspect, the embodiment of the present application provides a packaging structure for packaging optoelectronic devices, including: at least one organic packaging layer covering the optoelectronic device, the organic packaging layer is embedded with a heat dissipation part, and the heat dissipation The portion includes a phase change material layer.

Optionally, the heat dissipation part further includes a first heat conduction layer, the first heat conduction layer is located on the side of the phase change material layer away from the photoelectric device, and the thermal conductivity of the first heat conduction layer is higher than that of the phase change material layer. thermal conductivity of the phase change material layer;

Alternatively, the heat dissipation part further includes a second heat conduction layer, the second heat conduction layer is located on the side of the phase change material layer close to the photoelectric device, and the thermal conductivity of the second heat conduction layer is lower than that of the first heat conduction layer. The thermal conductivity of the thermal conduction layer, and the thermal conductivity of the second thermal conduction layer is higher than the thermal conductivity of the thermal phase change material layer.

Optionally, the material of the first thermal conduction layer is selected from at least one of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials; and/or,

The material of the second heat conducting layer is at least one selected from metals, inorganic insulating materials, organic insulating materials and two-dimensional materials.

Optionally, the thickness of the heat dissipation part is smaller than the thickness of the organic encapsulation layer, the thickness of the organic encapsulation layer is 15nm-2μm, and/or, the thickness of the first heat conducting layer is 5nm to 800nm, and/or, The thickness of the second heat conducting layer is 5 nm to 800 nm, and/or the thickness of the phase change material layer is 5 nm to 1.9 μm.

Optionally, the heat dissipation part is composed of a phase change material layer, a first heat conduction layer and a second heat conduction layer;

The first heat conducting layer is located on the side of the phase change material layer away from the photoelectric device;

The second heat conducting layer is located on a side of the phase change material layer close to the optoelectronic device;

The thermal conductivity of the first thermal conduction layer is higher than that of the second thermal conduction layer, and the thermal conductivity of the first thermal conduction layer and the second thermal conduction layer are both higher than that of the thermal phase change material layer.

Optionally, the phase change material layer has phase variability when the photoelectric device generates heat, and the phase change material of the phase change material layer is selected from solid-liquid phase change materials and solid-solid phase change materials at least one of .

Optionally, the phase change material is selected from at least one of aliphatic hydrocarbons, fatty acids and polyols.

Optionally, the phase transition temperature of the phase change material is lower than the operating temperature of the optoelectronic device.

Optionally, the orthographic projection of the heat dissipation part covers the orthographic projection of the optoelectronic device.

Optionally, the encapsulation structure further includes at least one inorganic encapsulation layer, the inorganic encapsulation layer and the organic encapsulation layer are alternately laminated, and at least one organic encapsulation layer is in direct contact with the optoelectronic device.

In the second aspect, the embodiment of the present application also provides a photoelectric device packaging method, including:

Depositing an organic encapsulation layer for the first time on the optoelectronic device to be encapsulated;

Setting a mold in an area on the organic encapsulation layer deposited for the first time, surrounding the area where the mold is located, and continuing to deposit the organic encapsulation layer for the second time on the organic encapsulation layer deposited for the first time;

removing the mold and depositing a heat sink in the area where the mold was located; and

Continue to deposit the organic encapsulation layer for the third time above the organic encapsulation layer deposited for the second time and the heat dissipation part, so as to obtain the organic encapsulation layer embedded with the heat dissipation part;

Wherein, the heat dissipation part includes a phase change material layer.

Optionally, the heat dissipation part also includes a first heat conduction layer, and removing the mold and depositing the heat dissipation part in the original area of the mold includes:

The mold is removed, and the phase-change material layer and the first heat-conducting layer are sequentially deposited in the area where the mold was located from bottom to top.

Optionally, the heat dissipation part further includes a second heat conduction layer, and the removing the mold and depositing the heat dissipation part in the area where the mold was originally located includes: removing the mold, and forming a heat dissipation layer in the area where the mold was originally located The second heat conduction layer, the phase change material layer and the first heat conduction layer are sequentially deposited from bottom to top.

In a third aspect, the embodiment of the present application further provides a display device, including a photoelectric device, and the packaging structure described in the first aspect, or including a photoelectric device, and a packaging structure prepared by the method described in the second aspect.

Beneficial effect:

This application uses the organic encapsulation layer embedded with a heat dissipation part for the encapsulation structure. The phase change material layer in the heat dissipation part can undergo a phase change to absorb part of the heat generated by the encapsulated optoelectronic device during operation and prevent the temperature of the device from increasing. If it is too high, it will affect the performance of the device; on the other hand, since the heat dissipation part is embedded in the organic packaging layer, it will not change the characteristics of the organic packaging material, and can take into account the heat dissipation effect and the film quality of the organic packaging layer without affecting its performance. As a planarization layer, it will not adversely affect the process of the organic encapsulation layer and the light output of the device; in addition, the heat dissipation part embedded in the organic encapsulation layer can block water and oxygen, which can improve the water content of the organic encapsulation layer. Oxygen barrier effect.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings that need to be used in the description of the embodiments.

FIG. 1 is a schematic structural diagram of a first packaging structure provided in an embodiment of the present application;

Fig. 2 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

FIG. 3 is a schematic structural diagram of a second package structure provided by an embodiment of the present application;

FIG. 4 is a schematic structural diagram of a third package structure provided by an embodiment of the present application;

5 is a schematic flow chart of a method for preparing a package structure provided in an embodiment of the present application;

FIG. 6 is a schematic diagram of a packaging structure during the manufacturing method of the packaging structure provided by the embodiment of the present application.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

Embodiments of the present application provide a packaging structure, a packaging method, and a display device. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used for designation only and do not impose numerical requirements or establish an order. Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the application; therefore, the described range should be regarded as The description has specifically disclosed all possible subranges as well as individual values within that range. Whenever a numerical range is indicated herein, it is meant to include any cited numeral (fractional or integral) within the indicated range.

First, please refer to FIGS. 1 to 4 , the present application provides a packaging structure for packaging an optoelectronic device 20 , the packaging structure includes: at least one organic encapsulation layer 30 covering the optoelectronic device 20 , the organic encapsulation The layer 30 is embedded with a heat sink. In some embodiments, as shown in FIG. 1 , the heat sink is completely surrounded by the organic encapsulation layer 30 , and the heat sink includes a phase change material layer 42 .

For this embodiment, the thermal phase change material is a transparent organic material with heat conduction properties. The thermal phase change material generally absorbs heat in a solid-solid or solid-liquid phase transition and dissipates heat in a reverse phase transition.

In this application, the organic encapsulation layer 30 embedded with a heat dissipation part is used for the encapsulation structure. The phase change material layer 42 in the heat dissipation part can undergo a phase change to absorb part of the heat generated by the encapsulated optoelectronic device 20 when it is in operation. When the device is not working or the heat generated is continuously lower than the phase change temperature of the thermal phase change material, the heat of the phase change material layer 42 will be released slowly, prolonging the heat dissipation time, preventing the temperature of the device from being too high and affecting the performance of the device; On the other hand, since the heat dissipation part is embedded in the organic packaging layer 30, the characteristics of the organic packaging material will not be changed, and the heat dissipation effect and the film-forming quality of the organic packaging layer can be taken into account, without affecting its properties as a planarization layer. And it will not adversely affect the manufacturing process of the organic encapsulation layer 30 and the light output of the device; in addition, the heat dissipation part embedded in the organic encapsulation layer 30 can block water and oxygen, which can improve the water and oxygen barrier effect of the organic encapsulation layer 30 .

In some embodiments, the phase change material layer 42 has phase variability when the photoelectric device 20 generates heat, and the phase change material of the phase change material layer 42 is selected from solid-liquid phase change materials and solid-liquid phase change materials. At least one of solid phase change materials, solid-liquid phase change materials or solid-solid phase change materials may be selected from at least one of aliphatic hydrocarbons, fatty acids and polyols. Aliphatic hydrocarbon materials include but not limited to straight chain alkane materials and their modified or composite materials, fatty acid materials include but not limited to lauric acid materials, capric acid materials and their modified or composite materials, polyol materials include But not limited to pentaerythritol, trimethylolethane, neopentyl glycol, trishydroxymethylaminomethane, etc. and their composite materials.

In some embodiments, the material of the organic encapsulation layer 30 includes, but is not limited to, high molecular polymers such as epoxy resin, phenolic resin, urea-formaldehyde resin, and polymethyl methacrylate.

In some embodiments of the present application, the optoelectronic device 20 is disposed on the substrate 10, and the optoelectronic device 20 is specifically a quantum dot light-emitting diode device. Please refer to FIG. 2, which shows a quantum dot with an inverted structure A schematic structural view of a light emitting diode device, the quantum dot light emitting diode device 20 includes: a cathode 21 disposed on the substrate 10, an electron transport layer 22 disposed on the cathode 21, an electron transport layer 22 disposed on the electron transport layer 22 The quantum dot light emitting layer 23 on the quantum dot light emitting layer 23, the hole transport layer 24 on the quantum dot light emitting layer 23, the hole injection layer 25 on the hole transport layer 24 and the hole injection layer on the Anode 26 on 25.

The material of each functional layer in this embodiment can be a common material in the field. For example, the substrate 10 can be, for example, a glass substrate; the material of the cathode 21 can be, for example, indium tin oxide (ITO); the electron transport layer 22 can be, for example, a zinc oxide film; The material is a quantum dot material; the material of the hole transport layer 24 can be, for example, TAPC/HAT-CN; the material of the hole injection layer 25 can be, for example, molybdenum trioxide (MoO ₃ ); the material of the anode 26 It may be, for example, silver (Ag).

In some embodiments, as shown in FIG. 3 , the heat dissipation part includes a first heat conduction layer 43, and the first heat conduction layer 43 is located on a side of the phase change material layer 42 away from the optoelectronic device 20, the The thermal conductivity of the first heat conducting layer 43 is higher than that of the phase change material layer 42 .

By disposing the first heat conduction layer 43 on the side of the phase change material layer 42 away from the photoelectric device 20 , the thermal conductivity of the first heat conduction layer 43 is higher than that of the phase change material layer 42 . When the heat generated by the device is higher than the phase change temperature of the thermal phase change material, the heat generated by the device can be oriented to dissipate the heat away from the optoelectronic device 20 through the phase change material layer 42 - the first heat conducting layer 43 . When the device is not working or the heat generated is continuously lower than the phase change temperature of the thermal phase change material, the heat released by the phase change of the phase change material will also preferentially dissipate heat away from the optoelectronic device 20 through the first heat conducting layer 43, thereby protecting the optoelectronic device 20.

In order to obtain a better heat dissipation effect, on the basis of the above-mentioned embodiments, in some embodiments, as shown in FIG. The phase change material layer 42 is close to the side of the optoelectronic device 20, the thermal conductivity of the second thermal conduction layer 41 is lower than the thermal conductivity of the first thermal conduction layer 43, and the first thermal conduction layer 43 and the second thermal conduction layer The thermal conductivity of the layers 41 is higher than that of the thermal phase change material layer 42 .

By arranging the heat dissipation part from bottom to top as the structure of second heat conduction layer 41-phase change material layer 42-first heat conduction layer 43, the thermal conductivity of the first heat conduction layer 43 is higher than that of the second heat conduction layer 41, and the Both the thermal conductivity of the first thermal conduction layer 43 and the second thermal conduction layer 41 are higher than that of the thermal phase change material layer 42 . When the heat generated by the device is higher than the phase transition temperature of the thermal phase change material, the thermal phase change material absorbs the heat generated by the device through phase change to avoid excessive temperature of the device; when the heat generated by the device continues to be higher than the thermal phase change material When the phase change temperature is lower than the phase change temperature, since the thermal phase change material also has thermal conductivity, the heat generated by the device can be dissipated in a direction away from the optoelectronic device 20 through the second heat conduction layer 41 - the phase change material layer 42 - the first heat conduction layer 43. When the device is not working or the heat generated is continuously lower than the phase transition temperature of the thermal phase change material, the heat released by the phase change material through the reverse phase transition will dissipate heat away from the optoelectronic device 20 through the first heat conducting layer 43, thereby protecting the The photoelectric device 20 significantly improves the heat dissipation effect of the photoelectric device 20 .

It should be noted that "thermal conductivity" in this application has a known meaning in the art, which can be understood as "thermal conductivity" or "thermal conductivity", which means that under stable heat transfer conditions, a material with a thickness of 1m, two sides The temperature difference on the surface is 1 degree (K, ℃), and the heat transferred through an area of 1 square meter within a certain period of time, the unit is W/m·degree W/(m·K). The thermal conductivity of materials in this application can be the thermal conductivity of known materials recognized in the art, or be measured according to methods such as ASTM D5470 or ISO22007-2:2015, as long as the thermal conductivity measured by any method is within the scope defined in this application All can be used to realize the purpose of this application.

In some embodiments, the material of the first heat conduction layer 43 and the material of the second heat conduction layer 41 are each independently selected from at least one of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials. That is, the material of the first heat conducting layer 43 is selected from at least one of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials, and the material of the second heat conducting layer 41 is selected from metals, inorganic insulating materials, organic insulating materials and at least one of two-dimensional materials. Metal materials include but not limited to silver (Ag), gold (Au), copper (Cu), aluminum (Al), etc. Inorganic insulating materials include but not limited to aluminum oxide, silicon nitride, aluminum nitride, etc. Organic insulating materials include But not limited to silica gel, two-dimensional materials include graphene, boron nitride, etc.

Wherein, the thermal conductivity of the material of the first thermal conduction layer 43 is higher than the thermal conductivity of the material of the second thermal conduction layer 41 .

For example: in one embodiment of the present application, when the material of the first heat conduction layer 43 is graphene, the material of the second heat conduction layer 41 is heat conduction silica gel, both of graphene and silica gel have good light transmittance and Graphene has a higher thermal conductivity than silica gel.

In another embodiment of the present application, when the material of the first thermal conduction layer 43 is silver with a thickness of 25nm, the material of the second thermal conduction layer 41 is silver with a thickness of 5nm. In addition to performance, it also has good light transmittance.

In the embodiment of the present application, the thickness of the heat dissipation part is smaller than the thickness of the organic encapsulation layer 30 , and in some embodiments, the thickness of the organic encapsulation layer 30 is 15 nm (nanometer) to 2 μm (micrometer).

In some embodiments, the thickness of the first heat conduction layer 43 is 5nm to 800nm. If the first heat conduction layer 43 is too thin, the overall heat conduction performance of the heat dissipation part will be reduced. If the first heat conduction layer 43 is too If it is thick, it will affect the light transmittance. It can be understood that the thickness of the first heat conducting layer 43 can be any value within the range of 5nm to 800nm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 800nm or between 5nm and 800nm Other values not listed in between.

In some embodiments, the thickness of the second heat conduction layer 41 is 5nm to 800nm. If the second heat conduction layer 41 is too thin, the overall heat conduction performance of the heat sink will be reduced. If the second heat conduction layer 41 is too thin If it is thick, it will affect the light transmittance. It can be understood that the thickness of the second heat conducting layer 41 can be any value within the range of 5nm to 800nm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 800nm or between 5nm and 800nm Other values not listed in between.

In some embodiments, the thickness of the phase-change material layer 42 is 5 nm to 1.9 μm, and the thermal phase-change material layer is an organic transparent film layer, which has good thermal conductivity and light transmittance. If the phase-change material layer If 42 is too thin, the heat dissipation effect of the heat dissipation part will be affected. If the phase change material layer 42 is too thick, the effect of the organic encapsulation layer 30 as a planarization layer will be affected, and the preparation difficulty of embedding the heat dissipation part into the organic encapsulation layer 30 will be increased. . It can be understood that the thickness of the phase change material layer 42 can be any value within the range of 5nm to 1.9μm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 1μm, 1.2μm, 1.5 μm, 1.7μm, 1.9μm or other unlisted values between 5nm and 1.9μm.

In order to prevent the temperature from rising suddenly when the device starts to work and affect the performance of the device, in one embodiment, the phase change temperature of the phase change material is lower than the working temperature of the optoelectronic device 20 .

In order to obtain a better heat dissipation effect, the orthographic projection of the photoelectric device 20 (such as the orthographic projection on the substrate 10, the photoelectric device 20 is arranged on the substrate 10) is located at the front of the orthographic projection of the heat dissipation part. In some embodiments, the orthographic projection of the heat dissipation part completely covers the orthographic projection of the optoelectronic device 20 .

In order to strengthen the water and oxygen barrier ability of the encapsulation structure, in some embodiments, the encapsulation structure further includes one or more layers of inorganic encapsulation layer 50, when the inorganic encapsulation layer 50 is a single layer, as shown in Figure 1 As shown, the inorganic encapsulation layer 50 is located on the side of the organic encapsulation layer 30 away from the optoelectronic device 20. When the inorganic encapsulation layer 50 is multi-layered, the inorganic encapsulation layer 50 and the organic encapsulation layer 30 Alternately stacked, and at least one organic encapsulation layer 30 is in direct contact with the optoelectronic device 20 .

When the inorganic encapsulation layer 50 and the organic encapsulation layer 30 are stacked alternately, in some embodiments, the heat dissipation part is disposed in the organic encapsulation layer 30 that is in direct contact with the optoelectronic device 20 . Direct contact, so the heat dissipation part has a good heat dissipation effect. In some other embodiments, the heat dissipation part is arranged in the organic encapsulation layer 30 which is not in direct contact with the optoelectronic device 20. Since the heat can be transferred to the heat dissipation part through the inorganic encapsulation layer 50 for heat dissipation, the heat dissipation part can still play a role. cooling effect.

The material of the inorganic encapsulation layer 50 includes, but is not limited to, non-metal oxides such as silicon oxide, aluminum oxide, titanium oxide, zirconium oxide, silicon nitride, aluminum nitride, boron nitride, titanium nitride, silver, magnesium, copper, or aluminum. compounds, metal oxides, nitrides and metallic materials.

As shown in Figure 5 and Figure 6, the embodiment of the present application also provides a packaging method, including:

S10. Depositing an organic encapsulation layer on the optoelectronic device 20 to be encapsulated for the first time.

S20. Setting a mold 60 in an area on the organic encapsulation layer deposited for the first time, surrounding the area where the mold 60 is located, and continuing to deposit the organic encapsulation layer for the second time on the organic encapsulation layer deposited for the first time.

S30 . The mold 60 is removed, and a heat dissipation part is deposited on the original area of the mold 60 , wherein the heat dissipation part includes the phase change material layer 42 .

In some embodiments, the phase change material layer 42 has a phase change when the photovoltaic device 20 generates heat.

In some embodiments, the mold 60 is removed by photolithography, chemical etching or physical etching.

In some embodiments, the heat dissipation part further includes a first heat conduction layer, and the removal of the mold, and depositing the heat dissipation part in the original area of the mold 60 include:

The mold is removed, and the phase-change material layer 42 and the first heat-conducting layer are sequentially deposited from bottom to top in the area where the mold was originally located;

In some embodiments, the heat dissipation part further includes a second heat conduction layer, and removing the mold 60 and depositing the heat dissipation part in the original area of the mold 60 includes: removing the mold 60 and depositing the heat dissipation part in the mold 60. In the area where 60 was originally located, the second heat conducting layer, the phase change material layer 42 and the first heat conducting layer are deposited sequentially from bottom to top.

S40. Continue to deposit the organic encapsulation layer for the third time on the organic encapsulation layer deposited for the second time and the heat dissipation part, so as to obtain the organic encapsulation layer 30 embedded with the heat dissipation part.

In the present application, the methods for depositing each film layer on the photoelectric device 20 can be realized by methods known in the art, such as chemical methods and physical methods, wherein chemical methods include: chemical vapor deposition, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, co-precipitation method. Physical methods include physical coating methods and solution processing methods. Specific physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc. Solution processing methods include spin coating method, printing method, inkjet printing method, blade coating method, printing method, dipping method, soaking method, spraying method, roller coating method, casting method, slit coating method, strip coating method coating method.

For example: in one embodiment of the present application, the organic encapsulation layer 30 is prepared by the inkjet printing method in the solution method, and the inkjet printing method mainly uses inkjet printing equipment to prepare the organic encapsulation layer 30. This method mainly uses The solution of the organic packaging material is filtered and installed in the ink cartridge of the inkjet printing device. After adjusting the printing voltage, air pressure, waveform and other parameters, the alignment mark drops the ink in the predetermined area to form the organic packaging layer 30 . In this application, each functional layer is prepared by an inkjet printing method, which can greatly reduce the production cost and be used for mass production.

In another embodiment of the present application, the organic encapsulation layer 30 is prepared by the spin-coating method in the solution method. In this application, the preparation of the organic encapsulation layer 30 by the spin-coating method needs to prepare the organic encapsulation material solution first. , place the sheet to be spin-coated on a spin-coater, drop the prepared organic encapsulation solution onto the spin-coater, perform spin-coating at a preset speed, and complete the preparation of the organic encapsulation layer 30 after heat treatment. The spin coating method has the characteristics of mild process conditions, simple operation, energy saving and environmental protection, etc. The photoelectric device 20 prepared by it has the advantages of high carrier mobility and precise thickness.

The solution method is a commonly used method for depositing film layers in the field. In the embodiment of the present application, the heat dissipation part is embedded in the organic encapsulation layer 30. During the preparation process, the organic encapsulation layer is formed three times, and the heat dissipation part is prepared separately. Therefore The properties of the organic encapsulation layer material will not be changed, and the mixing of the phase change material and the material of the organic encapsulation layer 30 will avoid the change of the solution viscosity of the organic encapsulation material and affect the feasibility of the solution process.

For the parts not described in detail in the various embodiments of the preparation method of the packaging structure in this application, please refer to the relevant description of the packaging structure in this application.

Based on the same idea, the present application also provides a display device, which includes a photoelectric device 20, and the package structure described in the above embodiments, or includes a photoelectric device 20, and a package prepared by the method described in the above embodiments structure, its structure, implementation principle and effect are similar, and will not be repeated here.

The display device may be: a lighting fixture and a backlight, or any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, and a navigator.

The packaging structure, packaging method and display device provided by the embodiment of the present application have been introduced in detail above. In this paper, specific examples are used to illustrate the principle and implementation of the application. The description of the above embodiment is only for helping Understand the method of this application and its core idea; at the same time, for those skilled in the art, according to the idea of this application, there will be changes in the specific implementation and scope of application. In summary, the content of this specification should not understood as a limitation of the application.

Claims (14)

1. An encapsulation structure for encapsulating an optoelectronic device, comprising: the photoelectric device comprises at least one organic packaging layer covering the photoelectric device, wherein a heat dissipation part is embedded in the organic packaging layer and comprises a phase change material layer.

2. The package structure of claim 1,

the heat dissipation part further comprises a first heat conduction layer, the first heat conduction layer is located on one side, away from the photoelectric device, of the phase-change material layer, and the heat conductivity of the first heat conduction layer is higher than that of the phase-change material layer.

3. The package structure of claim 2, wherein the heat dissipation portion further comprises a second thermally conductive layer located on a side of the phase change material layer proximate to the optoelectronic device, the second thermally conductive layer having a thermal conductivity lower than a thermal conductivity of the first thermally conductive layer, and the second thermally conductive layer having a thermal conductivity higher than a thermal conductivity of the phase change material layer.

4. The package structure of claim 3,

the first heat-conducting layer is made of at least one of metal, inorganic insulating material, organic insulating material and two-dimensional material; and/or the presence of a gas in the gas,

the second heat conducting layer is made of at least one of metal, inorganic insulating material, organic insulating material and two-dimensional material.

5. The package structure of claim 3, wherein the heat dissipation portion has a thickness less than a thickness of the organic encapsulation layer, and/or,

the organic encapsulation layer has a thickness of 15nm to 2 μm, and/or,

the first thermally conductive layer has a thickness of 5nm to 800nm, and/or,

the second thermally conductive layer has a thickness of 5nm to 800nm, and/or,

the thickness of the phase change material layer is 5nm to 1.9 μm.

6. The package structure of claim 1, wherein the phase change material layer has a phase variability when the optoelectronic device generates heat, the phase change material of the phase change material layer being selected from at least one of a solid-liquid phase change material and a solid-solid phase change material.

7. The package structure of claim 1, wherein the phase change material of the phase change material layer is selected from at least one of aliphatic hydrocarbons, fatty acids, and polyols.

8. The package structure of claim 1, wherein a phase transition temperature of the phase change material layer is lower than an operating temperature of the optoelectronic device.

9. The package structure of claim 1, wherein an orthographic projection of the heat sink portion covers an orthographic projection of the optoelectronic device.

10. The package structure according to claim 1, further comprising at least one inorganic encapsulation layer, wherein the inorganic encapsulation layer and the organic encapsulation layer are alternately stacked, and wherein at least one organic encapsulation layer is in direct contact with the optoelectronic device.

11. A method of packaging an optoelectronic device, comprising:

depositing an organic packaging layer on a photoelectric device to be packaged for the first time;

arranging a mold in an area on the organic packaging layer deposited for the first time, and continuously depositing the organic packaging layer for the second time on the organic packaging layer deposited for the first time around the area where the mold is located;

removing the mold, and depositing a heat dissipation part in the original area of the mold; and

continuously depositing an organic packaging layer for the third time above the organic packaging layer deposited for the second time and the heat dissipation part to obtain the organic packaging layer embedded with the heat dissipation part;

wherein the heat dissipation part comprises a phase change material layer.

12. The method of claim 11, wherein the heat sink portion further comprises a first thermally conductive layer, and wherein removing the mold and depositing the heat sink portion in an area of the mold comprises:

and removing the die, and sequentially depositing the phase change material layer and the first heat conduction layer in the original region of the die from bottom to top.

13. The method of packaging of claim 12, wherein the heat sink member further comprises a second thermally conductive layer, and wherein removing the mold and depositing the heat sink member in the area of the mold comprises: and removing the die, and sequentially depositing the second heat conduction layer, the phase change material layer and the first heat conduction layer in the original region of the die from bottom to top.

14. A display device comprising an optoelectronic device and the encapsulation structure of any one of claims 1 to 10, or comprising an optoelectronic device and an encapsulation structure prepared by the method of any one of claims 11 to 13.

Images