CN115903401B - Super-resolution pattern implementation method and device based on etching and double lithography - Google Patents
Super-resolution pattern implementation method and device based on etching and double lithography Download PDFInfo
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- CN115903401B CN115903401B CN202211653660.0A CN202211653660A CN115903401B CN 115903401 B CN115903401 B CN 115903401B CN 202211653660 A CN202211653660 A CN 202211653660A CN 115903401 B CN115903401 B CN 115903401B
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- 238000001459 lithography Methods 0.000 title claims abstract description 48
- 238000005530 etching Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 238000001259 photo etching Methods 0.000 claims abstract description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000001723 curing Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- -1 that is Chemical compound 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a super-resolution pattern realization method and device based on etching and double lithography, wherein the method comprises the following steps: first photoetching: coating positive photoresist or negative photoresist on a substrate, exposing the substrate based on a first optical mask, and developing to form a first pattern; etching: etching the photoresist of the first pattern to refine the line width in the first pattern; and (3) performing secondary photoetching: coating non-photosensitive photoresist or negative photoresist on the etched substrate, and directly exposing the substrate, or exposing the substrate by using a second optical mask, wherein the second optical mask comprises an optical mask partially exposing or completely exposing the pattern formed by the first photoetching; and developing the substrate, and thermally baking and curing to obtain the final super-resolution pattern. The invention can simply and quickly realize the pattern exceeding the resolution of the photoetching machine.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a super-resolution pattern realization method and device based on etching and double lithography.
Background
Currently, the resolution of the photolithography machine in the semiconductor manufacturing process has a corresponding limit, for example, 200nm, and when the pattern required by the process is a line width or a hole below 200nm, the photolithography machine cannot well expose the pattern, and more double exposure is used in this time. However, the existing self-aligned double exposure process steps include photolithography, deposition, etching and other process steps, which are relatively complicated and have high requirements on equipment, for example, the invention patent application No. 202110728156.1 discloses a manufacturing method and device for improving the inclination of a side wall of the self-aligned double exposure process, the invention patent application No. 201610596339.1 discloses a method for self-aligned double exposure development process and a semiconductor device, and the two patent documents are improvement and innovation for some problems of manufacturing super-resolution line width or hole pattern by the self-aligned double exposure process, but the process is still complicated.
Disclosure of Invention
In order to solve the problems, the invention provides a super-resolution pattern realization method and device based on etching and double lithography, which can simply and quickly realize patterns exceeding the resolution of a photoetching machine by using processes such as etching, double lithography and the like.
The technical scheme adopted by the invention is as follows:
a super-resolution pattern implementation method based on etching and double lithography comprises the following steps:
first photoetching: coating positive photoresist or negative photoresist on a substrate, exposing the substrate based on a first optical mask, and developing to form a first pattern;
etching: etching the photoresist of the first pattern to refine the line width in the first pattern;
and (3) performing secondary photoetching: coating non-photosensitive photoresist or negative photoresist on the etched substrate, and directly exposing the substrate, or exposing the substrate by using a second optical mask, wherein the second optical mask comprises an optical mask partially exposing or completely exposing the pattern formed by the first photoetching; and developing the substrate, and thermally baking and curing to obtain the final super-resolution pattern.
Further, the method for etching the photoresist of the first pattern comprises dry etching and wet etching.
Further, when the substrate is subjected to dry etching, the gas used includes a mixed gas including oxygen or hydrogen.
Further, when wet etching is performed on the substrate, the chemical liquid used includes TMAH, that is, tetramethylammonium hydroxide.
Further, in the second lithography, if the negative photoresist is coated on the substrate after the first lithography, a third optical mask can be used to expose the substrate, where the third optical mask includes an optical mask that exposes the first pattern formed by the first lithography partially or completely and forms a second pattern in other areas.
Further, in the second lithography, the thickness of the non-photosensitive photoresist or the negative photoresist coated on the substrate after the first lithography does not exceed the thickness of the photoresist after the first lithography.
Further, the non-photosensitive photoresist is not affected by photolithography and developer.
Further, the non-photosensitive photoresist includes an ARC material, i.e., an anti-reflective coating.
A super-resolution pattern realization device based on etching and double lithography, comprising:
the first photoetching module is configured to coat positive photoresist or negative photoresist on a substrate, expose the substrate based on a first optical mask plate and develop the substrate to form a first pattern;
the etching module is configured to etch the photoresist of the first pattern so as to refine the line width in the first pattern;
the second photoetching module is configured to coat non-photosensitive photoresist or negative photoresist on the substrate etched by the etching module, directly expose the substrate or expose the substrate by using a second optical mask, wherein the second optical mask comprises an optical mask which is partially exposed or completely exposed from the first photoetching module and is used for photoetching a first pattern; and developing the substrate, and thermally baking and curing to obtain the final super-resolution pattern.
Further, the non-photosensitive photoresist includes an ARC material, i.e., an anti-reflective coating.
The invention has the beneficial effects that:
the invention provides a super-resolution pattern realization method and device based on etching and double lithography by utilizing material characteristics and the like, and can simply and rapidly realize patterns exceeding the resolution of a photoetching machine. Compared with the traditional multi-step self-aligned double exposure process, the invention has simpler process realization, lower equipment requirement and better production and yield improvement.
Drawings
Fig. 1 is a flowchart of a method for realizing a super-resolution pattern based on etching and double lithography according to embodiment 1 of the present invention.
FIG. 2 is a schematic diagram of a silicon wafer coated with a positive photoresist according to example 1 of the present invention.
FIG. 3 is a schematic view of the exposure of a silicon wafer according to example 1 of the present invention.
FIG. 4 is a schematic view of the development of a silicon wafer according to example 1 of the present invention.
Fig. 5 is a schematic diagram of silicon wafer etching according to embodiment 1 of the present invention.
Fig. 6 is a schematic diagram showing a photoresist coating manner in the second photolithography process according to embodiment 1 of the present invention.
FIG. 7 is a diagram showing the exposure mode of the second photolithography process according to embodiment 1 of the present invention.
FIG. 8 is a diagram showing the exposure mode of the second photolithography process according to embodiment 1 of the present invention.
FIG. 9 is a three-dimensional schematic view of the exposure method of the second photolithography process according to embodiment 1 of the present invention.
FIG. 10 is a diagram showing the exposure method of the second photolithography process according to embodiment 1 of the present invention.
Fig. 11 is a schematic diagram of a super-resolution image formed by re-development and thermal bake curing of example 1 of the present invention.
Detailed Description
Specific embodiments of the present invention will now be described in order to provide a clearer understanding of the technical features, objects and effects of the present invention. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
Example 1
As shown in fig. 1, the present embodiment provides a method for implementing a super-resolution pattern based on etching and dual lithography, which includes three steps of first lithography, etching and second lithography, wherein:
the first photoetching step is to coat positive photoresist or negative photoresist on the substrate, expose the substrate based on the first optical mask plate and develop the substrate to form a first pattern.
The etching step is to etch the photoresist of the first pattern to refine the line width in the first pattern, for example, 200nm line width is refined to 150nm line width.
The second photoetching step is to coat non-photosensitive photoresist or negative photoresist on the etched substrate, directly expose the substrate, or use a second optical mask to expose the substrate, wherein the second optical mask comprises an optical mask partially or completely exposing the pattern formed by the first photoetching; and developing the substrate, and thermally baking and curing to obtain the final super-resolution pattern.
Preferably, the manner of etching the photoresist of the first pattern includes dry etching and wet etching. More preferably, when dry etching the substrate, the gas used includes a mixed gas including oxygen or hydrogen. More preferably, the chemical used in wet etching the substrate includes TMAH, tetramethyl ammonium hydroxide.
Preferably, in the second lithography, if a negative photoresist is coated on the substrate after the first lithography, the substrate can be exposed by using a third optical mask, where the third optical mask includes an optical mask that partially exposes or totally exposes the first pattern formed by the first lithography and forms a second pattern in other areas.
Preferably, in the second lithography, the thickness of the non-photosensitive photoresist or the negative photoresist coated on the substrate after the first lithography does not exceed the thickness of the photoresist after the first lithography.
Preferably, the non-photosensitive photoresist is not affected by the lithography and developer. More preferably, the non-photosensitive photoresist may employ an ARC material, i.e., an anti-reflective coating.
More preferably, the embodiment provides a specific process scheme of a super-resolution pattern implementation method based on etching and double lithography, which comprises the following steps:
1. normally coating positive photoresist or negative photoresist on a silicon wafer, as shown in FIG. 2, which is a schematic diagram of the silicon wafer coated with the positive photoresist;
2. normal exposure, as in fig. 3;
3. development, no thermal bake curing, as shown in fig. 4;
4. the line width is thinned using etching, as in fig. 5. The etching mode can use dry etching, oxygen and other gas matching modes, hydrogen and other gas matching modes and other plasma processing modes; wet etching may be used as the etching method, and a chemical solution such as TMAH may be used;
5. second photolithography process-gumming: the glue can be made of two materials, namely, the glue is non-photosensitive, namely, is not influenced by photoetching and developing solution, and particularly, ARC and other materials can be adopted, and the glue thickness is not more than the thickness after the step 4; secondly, negative photoresist is subjected to photo-curing after photoetching and is not influenced by developing solution, and the glue coating thickness is not more than the thickness after the step 4, as shown in fig. 6;
6. second photolithography process-exposure: this exposure has multiple embodiments, the first uses a non-photosensitive glue, and maskless exposure can be used, as shown in fig. 7; the mask plate partially exposed or completely exposed for the first lithography to form the pattern can be used, as shown in fig. 8 and 9, respectively. The second type uses negative photoresist, and maskless exposure can be used, as shown in fig. 7; a mask plate which is partially exposed or completely exposed and subjected to first photoetching to form a pattern can be used, as shown in fig. 8 and 9 respectively; a mask plate which is partially exposed or completely exposed and is subjected to first lithography to form a pattern and other patterns in other areas can be used, as shown in fig. 10;
7. and developing again, and curing by thermal baking, as shown in fig. 11, to obtain the final super-resolution pattern.
It should be noted that, because the alignment of the lithography machine and the exposure system are complex, there are alignment steps such as pre-alignment and fine alignment, the exposure also involves the scaling of the pattern, and the situations of different lithography machines are also quite different. For the sake of easy understanding, the description is in the drawings of the specification in the simplest and most clearly understood manner, and does not represent all practical situations.
Example 2
This example is based on example 1:
the embodiment provides a super-resolution pattern realization device based on etching and double lithography, which comprises an etching module, a first lithography module and a second lithography module, wherein:
the first photoetching module is configured to coat positive photoresist or negative photoresist on a substrate, expose the substrate based on a first optical mask plate and develop the substrate to form a first pattern.
The etching module is configured to etch the photoresist of the first pattern to refine the line width in the first pattern.
The second photoetching module is configured to coat non-photosensitive photoresist or negative photoresist on the substrate etched by the etching module, directly expose the substrate, or expose the substrate by using a second optical mask, wherein the second optical mask comprises an optical mask which is partially exposed or completely exposed with a first pattern formed by photoetching of the first photoetching module; and developing the substrate, and thermally baking and curing to obtain the final super-resolution pattern.
It should be noted that, for the sake of simplicity of description, the foregoing method embodiments are expressed as a series of combinations of actions, but it should be understood by those skilled in the art that the present application is not limited by the order of actions described, as some steps may be performed in other order or simultaneously according to the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily required in the present application.
Claims (9)
1. The super-resolution pattern implementation method based on etching and double lithography is characterized by comprising the following steps of:
first photoetching: coating positive photoresist on a substrate, exposing the substrate based on a first optical mask, and developing to form a first pattern;
etching: etching the photoresist of the first pattern to refine the line width in the first pattern;
and (3) performing secondary photoetching: coating non-photosensitive photoresist or negative photoresist on the etched substrate, and directly exposing the substrate, or exposing the substrate by using a second optical mask, wherein the second optical mask comprises an optical mask partially exposing or completely exposing the pattern formed by the first photoetching; developing the substrate, and thermally baking and curing to obtain a final super-resolution pattern;
in the second lithography, if the etched substrate is coated with a negative photoresist, a third optical mask can also be used to expose the substrate, where the third optical mask includes an optical mask that exposes the first pattern formed by the first lithography partially or completely and forms a second pattern in other areas.
2. The method for realizing the super-resolution pattern based on etching and double lithography according to claim 1, wherein the way of etching the photoresist of the first pattern comprises dry etching and wet etching.
3. The method for realizing super-resolution pattern based on etching and double lithography according to claim 2, wherein the gas used in dry etching of the substrate comprises a mixed gas comprising oxygen or hydrogen.
4. The method for realizing super-resolution pattern based on etching and double lithography according to claim 2, wherein the chemical liquid used in wet etching of the substrate comprises TMAH, tetramethyl ammonium hydroxide.
5. The method according to claim 1, wherein in the second lithography, the thickness of the non-photosensitive photoresist or the negative photoresist coated on the substrate after the first lithography does not exceed the thickness of the photoresist after the first lithography.
6. The method for realizing super-resolution pattern based on etching and double lithography according to claim 1, wherein the non-photosensitive photoresist is not affected by lithography and developing solution.
7. The method of claim 1, wherein the non-photosensitive photoresist comprises an ARC material, i.e., an anti-reflective coating.
8. A super-resolution pattern realization device based on etching and double lithography, comprising:
the first photoetching module is configured to coat positive photoresist on a substrate, expose the substrate based on a first optical mask plate and develop the substrate to form a first pattern;
the etching module is configured to etch the photoresist of the first pattern so as to refine the line width in the first pattern;
the second photoetching module is configured to coat non-photosensitive photoresist or negative photoresist on the substrate etched by the etching module, directly expose the substrate or expose the substrate by using a second optical mask, wherein the second optical mask comprises an optical mask which is partially exposed or completely exposed from the first photoetching module and is used for photoetching a first pattern; developing the substrate, and thermally baking and curing to obtain a final super-resolution pattern;
in the second lithography module, if the substrate etched by the etching module is coated with a negative photoresist, a third optical mask can also be used to expose the substrate, where the third optical mask includes an optical mask that exposes a part or all of the first pattern formed by the first lithography module and forms a second pattern in other areas.
9. The apparatus of claim 8, wherein the non-photosensitive photoresist comprises an ARC material, i.e., an anti-reflective coating.
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| US7268080B2 (en) * | 2005-11-09 | 2007-09-11 | Infineon Technologies Ag | Method for printing contacts on a substrate |
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| KR20090010746A (en) * | 2007-07-24 | 2009-01-30 | 주식회사 동부하이텍 | Semiconductor device manufacturing method |
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