CN115899720A

CN115899720A - Method for epitaxial safety control

Info

Publication number: CN115899720A
Application number: CN202211332145.2A
Authority: CN
Inventors: 龚赛; 杨振域; 王超; 郑岳亮; 吴志豪; 王瀚; 杜金生; 郝小辉; 孙晨光; 王彦君
Original assignee: Zhonghuan Advanced Semiconductor Materials Co Ltd
Current assignee: Zhonghuan Advanced Semiconductor Materials Co Ltd
Priority date: 2022-10-28
Filing date: 2022-10-28
Publication date: 2023-04-04

Abstract

The invention discloses a method for controlling epitaxy safety, which comprises the following steps: s1, firstly, guiding tail gas generated by a host into a wet scrubber to remove TCS and HCL in the tail gas, introducing the residual combustible gas into a combustion scrubber to be combusted, and introducing the combusted combustible gas into an acid exhaust, wherein the treatment mode can achieve high-efficiency and high-purity tail gas treatment capacity, and effectively protects a machine and the environment; and S2, performing real-time serial linkage on fault signals of the host and the accessory equipment, performing shutdown immediately when a problem occurs, stopping using special gas when alarm shutdown occurs on the host platform and the accessory equipment, and performing alarm reminding when the content of the special gas exceeds the standard in environment monitoring and acid discharge monitoring. Can realize that high efficiency handles tail gas and to the gaseous safety management and control of epitaxy, reach 12 cun epitaxy and do not take place special gas and reveal the accident, improve the whole security of epitaxial processing greatly.

Description

Method for epitaxial safety control

Technical Field

The invention relates to the technical field of epitaxy security control, in particular to a method for epitaxy security control.

Background

There are many types of epitaxy equipment, but the main structure is very different, and the equipment for molecular beam epitaxy is more complex than that of other epitaxy technologies, including an ultrahigh vacuum system Knudsen box and various analysis instruments. From the development process of the MBE technology, the development mainly aims at developing III-V group compound semiconductors taking GaAs as the center, then II-VI group and IV-VI group compound semiconductors, and the development is recently turning to the application development of Si semiconductor devices.

At present, the normal pressure epitaxy equipment uses flammable and explosive CH4, H2, toxic and harmful PH3, TCS, HCL and B2H6 special gases, the problems of leakage, corrosion and the like exist in the using process, and a method for safely managing and controlling is needed to realize epitaxy safety production.

Disclosure of Invention

The invention aims to provide a method for epitaxial safety control, which aims to solve the problems of leakage and corrosion in the use process of the conventional normal-pressure epitaxial equipment provided by the background art, wherein the conventional normal-pressure epitaxial equipment uses combustible and explosive CH4 and H2, and toxic and harmful PH3, TCS, HCL and B2H6 special gases.

In order to achieve the purpose, the invention provides the following technical scheme: a method for epitaxial security management and control comprises the following steps:

s1, firstly, guiding tail gas generated by a main machine into a wet scrubber to remove TCS and HCL in the tail gas, enabling the residual combustible gas to enter a combustion scrubber for combustion, and enabling the residual combustible gas to enter an acid exhaust after combustion.

And S2, performing real-time serial linkage on fault signals of the host and the accessory equipment, performing shutdown immediately when a problem occurs, stopping using special gas when alarm shutdown occurs on the host platform and the accessory equipment, and performing alarm reminding when the content of the special gas exceeds the standard in environment monitoring and acid discharge monitoring.

S3, finally, in the gas flowing process, the N2purge can play a role in pushing gas to flow and preventing tempering, a slope with a certain angle is designed on an inner connecting pipe between wet and burn, condensed liquid generated in the process can effectively flow back to the wet, and the influence on the burn can also be effectively prevented.

Preferably, the angle of the design slope of the inner connecting pipe between wet and burn is 10 degrees, and the purity of the tail gas which is introduced into the wet scrubber and enters the combustion scrubber for combustion and then enters the acid exhaust treatment for removing the tail gas can reach 95%.

Preferably, the N2purge function of the design foreline prevents backfire in an air curtain manner, and the backfire preventing valve is additionally designed to prevent backfire in a valve manner.

Compared with the prior art, the invention has the beneficial effects that: in the process of silicon wafer production and processing, a fixed epitaxy tail gas treatment mode of water washing and burning is adopted, tempering is prevented in an air curtain mode by measuring the N2purge function of a foreline pipeline, tempering is prevented in a valve piece mode by increasing a designed tempering prevention valve piece, tempering is prevented in a valve piece mode, liquid accumulation is prevented by designing a fault signal linkage mode and a slope of 10 degrees from wet to burn, high-efficiency tail gas treatment and safety control on epitaxy gas are realized, no extra gas leakage accident occurs in 12-inch epitaxy, and the overall safety of epitaxy processing is greatly improved.

Drawings

FIG. 1 is a block diagram of a device connection system of the present invention;

FIG. 2 is a schematic view of the piping connection of the present invention.

In the drawings: 1. a host; 2. acid discharge; 3. a central control room; 4. an inline pipe; 5. a back fire prevention valve; 6. a wet scrubber; 7. a combustion scrubber; 8. and (4) exhausting the gas.

Detailed Description

The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The first embodiment is as follows:

referring to fig. 1-2, the management and control method of the present embodiment includes the following steps:

In this embodiment, the angle of the slope of the inline pipe design between wet and burn is 10 °, and the purity of the tail gas removed by the acid exhaust treatment after the tail gas is guided into the wet scrubber and the combustion scrubber for combustion can reach 95%.

In this embodiment, the N2purge function of the foreline pipeline is designed to prevent backfire in an air curtain manner, and meanwhile, the backfire prevention valve element is additionally designed to prevent backfire in a valve element manner.

Example two:

the difference from the first embodiment is characterized in that:

the control method of the embodiment comprises the following steps:

In this embodiment, the angle of the slope of the inline pipe design between wet and burn is 20 °, and the purity of the tail gas removed by the acid exhaust treatment after the tail gas is introduced into the wet scrubber can reach 70%.

To sum up: the experimental result of the invention in the first embodiment of the invention shows that compared with the experimental result of the second embodiment of the invention, the invention can realize more efficient tail gas treatment and epitaxial gas safety control, achieves 12-inch epitaxy without extra gas leakage accidents, and greatly improves the overall safety of epitaxial processing.

It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, article, or apparatus.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A method for epitaxial security management and control is characterized in that: the control method comprises the following steps:

s1, firstly, guiding tail gas generated by a main machine into a wet scrubber to remove TCS and HCL in the tail gas, introducing the residual combustible gas into a combustion scrubber to be combusted, and introducing the combusted gas into an acid exhaust, wherein the treatment mode can achieve high-efficiency and high-purity tail gas treatment capacity and effectively protect a machine table and the environment;

s2, performing real-time serial linkage on fault signals of the host and the accessory equipment, performing shutdown immediately when problems occur, stopping using special gas when the host platform and the accessory equipment are in alarm shutdown, and performing alarm reminding when the content of the special gas exceeds the standard in environment monitoring and acid discharge monitoring;

2. The method of claim 1, wherein: the angle of the designed slope of the inner connecting pipe between wet and burn is 10 degrees, and the purity of the tail gas which is removed by acid exhaust treatment after the tail gas is guided into the wet scrubber and enters the combustion scrubber for combustion can reach 95 percent.

3. The method of claim 1, wherein: the N2purge function of the design foreline prevents backfire in an air curtain mode, and meanwhile, a backfire preventing valve element is additionally designed and prevented in a valve element mode.