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CN115836394A - 一种半导体器件及其制造方法 - Google Patents

一种半导体器件及其制造方法 Download PDF

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Publication number
CN115836394A
CN115836394A CN202080102939.2A CN202080102939A CN115836394A CN 115836394 A CN115836394 A CN 115836394A CN 202080102939 A CN202080102939 A CN 202080102939A CN 115836394 A CN115836394 A CN 115836394A
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CN
China
Prior art keywords
sub
substrate
dielectric layer
layer
film layer
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Pending
Application number
CN202080102939.2A
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English (en)
Inventor
汤岑
饶进
刘涛
李海军
鲁微
乐伶聪
马俊彩
张志利
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN115836394A publication Critical patent/CN115836394A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

本申请实施例公开了一种半导体器件及其制造方法，半导体器件可以包括衬底、栅极、第二介质层、场板，其中衬底上具有第一介质层，第一介质层在第一区域的厚度大于在第一区域之外的第二区域的厚度，栅极位于衬底上且位于第一区域，栅极包括垂直衬底表面的方向上连接的第一栅极结构和第二栅极结构，第一栅极结构垂直衬底表面的方向上贯穿第一介质层，第二栅极结构形成于第一介质层远离所述衬底的一侧且覆盖部分第一介质层，第二介质层覆盖栅极和第一介质层，场板位于第二介质层上，且同时存在于第一区域和第二区域，这样，第二栅极结构和漏极之间的电容降低，而场板与沟道之间的电容增加，使器件的寄生电容减小，提高器件在高频下的增益特性。

Description

PCT国内申请，说明书已公开。

Claims (18)

  1. PCT国内申请，权利要求书已公开。
CN202080102939.2A 2020-11-27 2020-11-27 一种半导体器件及其制造方法 Pending CN115836394A (zh)

Applications Claiming Priority (1)

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PCT/CN2020/132301 WO2022110030A1 (zh) 2020-11-27 2020-11-27 一种半导体器件及其制造方法

Publications (1)

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CN115836394A true CN115836394A (zh) 2023-03-21

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US (1) US20230299022A1 (zh)
EP (1) EP4228007A4 (zh)
JP (1) JP2023550828A (zh)
CN (1) CN115836394A (zh)
WO (1) WO2022110030A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4503138A1 (fr) * 2023-08-03 2025-02-05 Thales Procédé de réalisation d'un transistor à effet de champ à haute mobilité

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230094094A1 (en) * 2021-09-30 2023-03-30 Texas Instruments Incorporated Gallium nitride device having a combination of surface passivation layers
CN118556292A (zh) * 2022-04-24 2024-08-27 华为技术有限公司 半导体器件及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227198A (zh) * 2012-01-27 2013-07-31 富士通半导体股份有限公司 化合物半导体器件及其制造方法
US20140312362A1 (en) * 2013-04-18 2014-10-23 Fujitsu Limited Compound semiconductor device and method of manufacturing the same
CN107810559A (zh) * 2015-06-29 2018-03-16 罗伯特·博世有限公司 具有高的电子可运动性的晶体管
CN207558793U (zh) * 2016-09-08 2018-06-29 半导体元件工业有限责任公司 共源共栅电路和电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100388509C (zh) * 2003-01-29 2008-05-14 株式会社东芝 功率半导体器件
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US10002958B2 (en) * 2016-06-08 2018-06-19 The United States Of America, As Represented By The Secretary Of The Navy Diamond on III-nitride device
CN107863291B (zh) * 2017-11-08 2020-06-26 西安电子科技大学 一种制作t型栅结构的电子束光刻方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227198A (zh) * 2012-01-27 2013-07-31 富士通半导体股份有限公司 化合物半导体器件及其制造方法
US20140312362A1 (en) * 2013-04-18 2014-10-23 Fujitsu Limited Compound semiconductor device and method of manufacturing the same
CN107810559A (zh) * 2015-06-29 2018-03-16 罗伯特·博世有限公司 具有高的电子可运动性的晶体管
CN207558793U (zh) * 2016-09-08 2018-06-29 半导体元件工业有限责任公司 共源共栅电路和电子设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4503138A1 (fr) * 2023-08-03 2025-02-05 Thales Procédé de réalisation d'un transistor à effet de champ à haute mobilité
FR3151940A1 (fr) * 2023-08-03 2025-02-07 Thales Transistor à effet de champ à haute mobilité amélioré

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EP4228007A1 (en) 2023-08-16
JP2023550828A (ja) 2023-12-05
US20230299022A1 (en) 2023-09-21
EP4228007A4 (en) 2023-12-06
WO2022110030A1 (zh) 2022-06-02

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