CN115835682A - Packaging material, packaging film layer, display panel and display device - Google Patents

Abstract

The application provides an encapsulating material, encapsulation rete, display panel and display device, encapsulating material is in the Fourier infrared absorption spectrogram, and the wave number is 1500cm ^‑1 To 3500cm ^‑1 The integrated area of absorption peak in the range of 500cm in wavenumber ^‑1 To 3500cm ^‑1 The integral area ratio of all absorption peaks in the range is 3% or less. The application provides an encapsulating material, encapsulation rete, display panel and display device, through high temperature and high humidity storage test and Fourier infrared spectroscopy analysis, confirm when encapsulating material wave number 1500cm in Fourier infrared absorption spectrogram ^‑1 To 3500cm ^‑1 The integral area of the absorption peak of the position accounts for 500cm in the Fourier infrared absorption spectrogram ^‑1 ～3500cm ^‑1 When the ratio of the integral area of all absorption peaks in the range is 3% or less, the adverse effect of the encapsulating layer formed of the encapsulating material on the oxide TFT can be reduced, and the adverse effect on the oxide TFT can be reducedThe possibility of negative drift of the threshold voltage Vth of the TFT is reduced, and the problem of poor display of the display device is further avoided.

Description

Packaging material, packaging film layer, display panel and display device

technical field

The present application relates to the field of display technology, and in particular to an encapsulation material, an encapsulation film layer, a display panel and a display device.

Background technique

Since the OLED display device has the advantages of self-luminescence, high brightness, good image quality and low energy consumption, it has become the mainstream development direction in the field of display technology. OLED display devices need to use TFT (Thin Film Transistor, Thin Film Transistor) for pixel driving. In the related art, large-size OLED display devices mainly use oxide TFTs for driving, but the display devices including oxide TFTs, the display panel is using During the process, the problem of uneven brightness of white spots displayed on the OLED display device caused by the drift of the TFT threshold voltage is likely to occur.

Contents of the invention

In view of this, the purpose of this application is to propose a packaging material, packaging film layer, display panel and display device, to overcome or at least partially solve the problem of display devices including oxide TFTs, the display panel of which is easy to produce OLED during use. The display device shows the problem of uneven brightness of white spots.

Based on the above purpose, the first aspect of the present application provides a packaging material, the packaging material in the Fourier transform infrared absorption spectrum wavenumber is 1500cm ^-1 to 3500cm ^-1 The integral area of the absorption peak in the range of wavenumber is 500cm-1 to 500cm ^-1 The proportion of the integral area of all absorption peaks within the range of 3500cm ^-1 is less than or equal to 3%.

Optionally, the encapsulation material is a silicon-oxygen compound, and the number of silicon-oxygen bonds in the silicon-oxygen compound accounts for greater than or equal to 97% of the total number of chemical bonds in the silicon-oxygen compound.

Based on the same inventive concept, the second aspect of the present application provides an encapsulation film layer, including the encapsulation material as described in the first aspect.

Based on the same inventive concept, the third aspect of the present application provides a display panel, including a light-emitting layer and an encapsulation layer covering at least the light-emitting side of the light-emitting layer, and the side of the encapsulation layer facing the light-emitting layer is as described in the second aspect Encapsulation film layer.

Optionally, the encapsulation layer includes a first encapsulation film layer and a second encapsulation film layer, the first encapsulation film layer covers the light-emitting layer, and the second encapsulation film layer is disposed on the first encapsulation film layer layer away from the light-emitting layer, and the water vapor transmission rate of the second packaging film layer is lower than the water vapor transmission rate of the first packaging film layer.

Optionally, the water vapor transmission rate of the second packaging film layer is less than 0.001 grams per square meter per day.

Optionally, the thickness of the first packaging film layer is greater than or equal to 0.3 microns.

Optionally, the thickness of the second packaging film layer is less than or equal to 1 micron.

Optionally, the display panel further includes a substrate, the luminescent layer is disposed on a first side of the substrate, and the second encapsulation layer covers the first encapsulation layer; There is a first barrier dam surrounding the light-emitting layer, a cover plate is provided on the top of the first barrier dam, and a filler package is provided in a space surrounded by the cover plate, the first barrier dam, and the substrate layer.

Based on the same inventive concept, a fourth aspect of the present application provides a display device, including the display panel as described in the third aspect.

As can be seen from the above, the packaging material, packaging film layer, display panel and display device provided by the application, through high-temperature and high-humidity storage tests and Fourier transform infrared spectrum analysis, determine that when the packaging material is in the Fourier transform infrared absorption spectrum In the figure, when the proportion of the integrated area of the absorption peak within the range of wavenumber 1500cm ^-1 to 3500cm ^-1 to the integral area of all absorption peaks within the range of wavenumber 500cm ^-1 to 3500cm ^- 1 is less than or equal to 3%, the formation of the encapsulation material can be reduced. The encapsulation layer has a bad influence on the oxide TFT, thereby reducing the possibility of negative drift of the threshold voltage Vth of the TFT, thereby avoiding the problem of poor display of the display device.

Description of drawings

In order to more clearly illustrate the technical solutions in the present application or related technologies, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or related technologies. Obviously, the accompanying drawings in the following description are only for this application Embodiments, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort.

FIG. 1 is a schematic diagram of uneven display brightness of an oxide TFT display panel;

FIG. 2 is a schematic diagram of a numerical curve diagram of an oxide TFT threshold voltage Vth at a position where brightness unevenness is located;

Figure 3 is a bad schematic diagram of pixel shrinkage caused by negative drift of oxide TFT threshold voltage Vth and uneven brightness of white spots on the display panel;

Fig. 4 is the Fourier transform infrared absorption spectrum of three kinds of packaging materials;

FIG. 5 is a schematic diagram of a display panel according to an embodiment of the present application.

Explanation of reference signs:

1. Encapsulation layer; 101. First encapsulation film layer; 102. Second encapsulation film layer; 2. Luminescent layer; 3. Filler encapsulation layer; 4. Cover plate; 5. First barrier dam; 6. Substrate; 601 , the first side.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

It should be noted that the relative arrangement of components, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.

At the same time, it should be understood that, for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship.

The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application or uses.

It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application shall have the usual meanings understood by those skilled in the art to which the present application belongs. "First", "second" and similar words used in the embodiments of the present application do not indicate any order, quantity or importance, but are only used to distinguish different components. "Comprising" or "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other elements or items. Words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right" and so on are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

The reason why the display panel has uneven brightness and white spots is that the threshold voltage Vth of the oxide TFT drifts negatively, which causes the current to increase, thereby making the display panel brighter locally. The applicant found through research that the negative shift of the threshold voltage Vth of the oxide TFT is due to the reaction between the channel layer in the oxide TFT and the packaging layer of the display panel, which increases the mobility of the channel.

FIG. 1 shows a schematic diagram of white spots appearing on an oxide TFT display panel. Figure 2 shows a schematic diagram of the numerical curve of the threshold voltage Vth of the oxide TFT at the location of the white spot, from which it can be seen that the threshold voltage Vth of the oxide TFT white spot is compared with that of the non-white spot (that is, the part outside the outer circle of the white spot) The threshold voltage Vth of the white spot is lower, and the closer to the center of the white spot, the lower the threshold voltage Vth, that is, the threshold voltage Vth of the inner circle of the white spot is smaller than the threshold voltage Vth of the middle circle of the white spot is smaller than the threshold voltage Vth of the outer circle of the white spot. FIG. 3 shows a bad schematic diagram of pixel shrinkage due to the negative drift of the oxide TFT threshold voltage Vth and white spots on the display panel. The position of the pixel shrinkage is shown in the dotted circle box in the figure.

In order to prevent the above defects, it is necessary to limit the encapsulation material used in the encapsulation layer.

In view of this, an embodiment of the present application provides an encapsulation material, the integral area of the absorption peak in the Fourier transform infrared absorption spectrum ranges from 1500 cm ^-1 to 3500 cm ^-1 and the wave number is 500 cm ^-1 The ratio of the integral area of all absorption peaks within the range from 3500 cm ^-1 to 3500 cm -1 is less than or equal to 3%.

In order to study the corresponding relationship between packaging materials and white spots, the applicant selected three OLED display panels, and the materials of the packaging layers in the three OLED display panels were SiON, SiNx and SiOx respectively. A high-temperature and high-humidity storage test is carried out on three OLED display panels. Exemplarily, the test environment is a stable environment with a temperature range of 85±2° C. and a humidity range of 85±2% RH. After 500 hours of testing, it was found that only the encapsulation layer of the OLED display panel made of SiOx material did not have the problem of white spots.

In order to further explore the correspondence between the above three encapsulation materials and the generation of white spots, Fourier transform infrared spectroscopy was carried out on the encapsulation layers of the three materials in the three OLED display panels to obtain the Fourier transform infrared absorption spectrum (hereinafter referred to as absorption Spectrum) as shown in Figure 4, the abscissa in the figure is the wave number (Wavernumber), the unit is cm ⁻¹ ; the ordinate is the absorbance (Absorbance). It can be seen from the figure that all three materials have absorption peaks in the range of wavenumbers from 500cm ^-1 to 1500cm ^-1 , and the absorption peaks of the three materials appear relatively relatively in the range of wavenumbers from 1500cm ^-1 to 3500cm ^-1 Therefore, it is speculated that the absorption peak in the range of wavenumbers from 1500cm ^-1 to 3500cm ^-1 is the main factor that causes the reaction between the packaging layer and the channel layer in the oxide TFT, resulting in white spots on the display panel.

In order to characterize the above corresponding relationship, the integrated area of the absorption peaks of each material in the range of wavenumbers from 1500cm ^-1 to 3500cm ^-1 is solved by existing software, and all the absorption peaks of each material in the absorption spectrum (that is, the wavenumber is within the range of 500cm ^-1 to 3500cm ^-1 ), the sum of the integral areas is solved separately, and after the above solution results are obtained, the area of each material in the range of wavenumber from 1500cm ^-1 to 3500cm ^-1 is calculated separately. The proportion of the integral area of the absorption peak to the integral area of all absorption peaks in the absorption spectrum, for example, for SiON material, this proportion is 7%; for SiOx material, this proportion is 3%. According to the ratio results obtained above combined with the experimental results of the high-temperature and high-humidity storage test, it can be known that the larger the ratio of the packaging material, the easier it is to cause the packaging layer formed by the packaging material to react with the channel layer in the oxide TFT, and then Cause white spots on the display panel. Therefore, it can be determined that when the above-mentioned proportion of the encapsulation material is less than or equal to 3%, the encapsulation layer formed therein can be prevented from reacting with the channel layer in the oxide TFT, and thus white spots can be avoided on the display panel.

For the packaging material provided in this embodiment, through high-temperature and high-humidity storage tests and Fourier transform infrared spectrum analysis, it is determined that when the packaging material has a wave number in the Fourier transform infrared absorption spectrum, the absorption peak integral within the range of 1500cm ^-1 to 3500cm ^-1 When the area accounts for less than or equal to 3% of the integrated area of all absorption peaks within the range of wavenumbers from 500cm ^-1 to 3500cm ^-1 , it can reduce the adverse effect of the packaging layer formed by the packaging material on the oxide TFT, thereby reducing the threshold voltage of the TFT The possibility of negative drift of Vth occurs, thereby avoiding the problem of poor display of the display device.

In the related art, the material of the channel layer can be metal oxide or metal oxynitride including at least one or several elements of In, Ga, Zn, Sn, Pr (lanthanides), such as IGZO, IGTO , IGO, ITO, IGZTO, IZO, ZTO, InO, ZnON, Pr-IGZO and other materials at least one or more. For example, the channel layer is a metal oxide semiconductor layer or a metal oxynitride semiconductor layer including at least one or several elements of In, Ga, Zn, Sn, Pr (lanthanides), such as IGZO layer, IGTO layer, IGO layer, ITO layer, IGZTO layer, IZO layer, ZTO layer, InO layer, ZnON layer, Pr-IGZO layer at least one or more.

Taking the use of oxide semiconductors such as IGZO (indium gallium zinc oxide) as an example to illustrate the channel layer, the applicant has found through research that the material of the channel layer, indium gallium zinc oxide (IGZO), can react with hydrogen to generate OH- ions, OH - The generation of ions increases the mobility of the channel so that the threshold voltage Vth of the partial oxide TFT shifts negatively.

In related technologies, the encapsulation layer is usually a thin film prepared by chemical vapor deposition. For example, a silicon nitride oxide thin film is prepared by atmospheric pressure chemical vapor deposition, and the raw materials used are NH ₃ and SiH ₂ . The thin film of silicon oxynitride may contain impurity hydrogen introduced by the cracking of ammonia gas. Impurity hydrogen in the encapsulation layer can permeate through paths such as particles and react with the channel layer, thereby causing the threshold voltage Vth of the oxide TFT to shift negatively.

In combination with the foregoing experimental results, in order to reduce the impurity hydrogen content in the packaging material, in some embodiments, the packaging material is a silicon-oxygen compound, and the number of silicon-oxygen bonds in the silicon-oxygen compound accounts for The proportion of the total number of chemical bonds is greater than or equal to 97%.

Combined with Figure 4, the absorption peak of each material in the absorption spectrum corresponds to a chemical bond, and the integrated area of each absorption peak represents the number of chemical bonds whose absorption wavenumber is within this range.

Through the absorption spectrum, it can be determined that the absorption peak of SiOx in the range of wavenumbers from 1000cm ^-1 to 1500cm ^-1 corresponds to the Si-O chemical bond, and its integrated area accounts for 97% of the total integrated area of all SiOx absorption peaks in the absorption spectrum , that is, the number of Si-O chemical bonds accounts for 97% of the total number of chemical bonds contained in SiOx. The impurity hydrogen in SiOx usually exists in the form of XH chemical bonds. When it is determined that the number of Si-O chemical bonds accounts for 97% of the total number of chemical bonds, it can be considered that the proportion of XH chemical bonds is less than or equal to 3%. Therefore, in combination with the aforementioned high-temperature and high-humidity storage test, it can be determined that when the packaging material is SiOx, and the ratio of the number of Si-O chemical bonds to the total number of chemical bonds in SiOx is greater than or equal to 97%, the package formed by the packaging material can be reduced. The layer has an adverse effect on the oxide TFT, thereby reducing the possibility of a negative drift of the threshold voltage Vth of the TFT, thereby avoiding white spots on the display device.

Based on the same inventive concept, combined with the descriptions of the packaging materials in the above embodiments, this embodiment provides a packaging film layer, which has the corresponding technical effects of the packaging materials in the above embodiments, which will not be repeated here.

An encapsulation film layer, comprising the encapsulation material of each of the above embodiments.

It should be noted that the encapsulation film layer may include one or more silicon oxide compounds, but the overall material characteristics of the encapsulation film layer must conform to the characteristics of the encapsulation material in each of the above embodiments, so as to reduce the oxidation resistance of the encapsulation layer formed by the encapsulation material. The material TFT has adverse effects.

Based on the same inventive concept, combined with the descriptions of the packaging film layers in the above embodiments, the present embodiment provides a display panel, which has the corresponding technical effects of the packaging film layers in the above embodiments, which will not be repeated here.

As shown in FIG. 5 , a display panel includes a light-emitting layer 2 and an encapsulation layer 1 covering at least the light-emitting side of the light-emitting layer 2. The side of the encapsulation layer 1 facing the light-emitting layer 2 is as described in the above-mentioned embodiments. packaging film layer.

Exemplarily, the light emitting layer 2 may be an organic light emitting diode device or an electroluminescent device (EL).

Exemplarily, the light emitting layer 2 may be a top emission structure or a bottom emission structure, and in this embodiment, a top emission structure is used as an example for illustration.

Exemplarily, the encapsulation layer 1 can be one or more layers. In order to protect the light-emitting layer 2 through the encapsulation film layer of the above embodiment, when the encapsulation layer 1 is multi-layered, it is necessary to make the above-mentioned encapsulation film layer be the same as the light-emitting layer. 2 The closest structural layer to prevent adverse effects on the oxide TFT caused by other structural layers with higher hydrogen content.

For the encapsulation film layer formed by SiOx material, although its hydrogen content is small, it can avoid adverse effects on the oxide TFT, but its water resistance is poor. If the encapsulation layer 1 is only an encapsulation film layer formed by SiOx material, In a use environment with high temperature and humidity, the effectiveness of the encapsulation layer 1 may decrease or even fail. Once the encapsulation film layer formed by SiOx material fails, gases such as oxygen O2, hydrogen H2 and water H2O in the air will enter the encapsulation layer 1 and react with the IGZO channel layer, resulting in the threshold voltage Vth of the oxide TFT Negative drift occurs, and the display device produces white spots.

Therefore, in order to protect the encapsulation film layer formed by the SiOx material and ensure its encapsulation effect, it is necessary to prevent the encapsulation film layer formed by the SiOx material from being affected by water in the air. As shown in FIG. 5 , in some embodiments, the encapsulation layer 1 includes a first encapsulation film layer 101 and a second encapsulation film layer 102, the first encapsulation film layer 101 covers the light-emitting layer 2, and the first encapsulation film layer 102 The second encapsulation film layer 102 is arranged on the side of the first encapsulation film layer 101 away from the light-emitting layer 2 , and the water vapor transmission rate of the second encapsulation film layer 102 is lower than the water vapor of the first encapsulation film layer 101 transmittance.

Exemplarily, the first encapsulation film layer 101 covers the light-emitting layer 2, that is, the orthographic projection of the first encapsulation film layer 101 on the surface of the structural layer where the light-emitting layer 2 is located can at least completely cover the orthographic projection of the light-emitting layer 2 on the surface of the structural layer. For example, the luminescent layer 2 is arranged on the surface of the substrate 6, the shape of the orthographic projection of the luminescent layer 2 on the surface of the substrate 6 is circular, and the shape of the orthographic projection of the first packaging film layer 101 on the surface of the substrate 6 is also circular, and the two orthographic projections The centers coincide, and the diameter corresponding to the orthographic projection of the light-emitting layer 2 is smaller than the diameter corresponding to the orthographic projection of the first packaging film layer 101 . It should be noted that, in this embodiment, the shapes of the light emitting layer 2 and the first packaging film layer 101 are not limited.

By arranging the second packaging film layer 102 with a lower water vapor transmission rate on the first packaging film layer 101, the water vapor in the air can be blocked to a certain extent, preventing the water vapor in the air from passing through the second packaging film layer 102. And contact with the first encapsulation film layer 101 formed by SiOx material, avoid the water vapor in the air from having adverse effects on the first encapsulation film layer 101, help to ensure the effectiveness of the first encapsulation film layer 101, prolong its service life , so as to further avoid white spots on the display panel.

In some embodiments, the water vapor transmission rate of the second packaging film layer 102 is less than 0.001 grams per square meter per day.

Combining with the selection of the aforementioned three packaging materials, the applicant conducted water vapor transmission tests on different packaging materials. Through the water vapor transmission test on the SiOx material with a thickness of 1 μm, the water vapor transmission rate WVTR of the SiOx material is 7.2×10 ^-2 g/m ² .day, that is, 0.072 grams per square meter per day. By performing a water vapor transmission test on a SiON material with a thickness of 1 μm, the water vapor transmission rate WVTR of the SiON material is 1.7×10 ^-4 g/m ² .day, that is, 0.00017 grams per square meter per day. It can be seen that the amount of water vapor passing through the SiON material is much smaller than the amount of water vapor passing through the SiOx material. Therefore, in order to meet the requirement of high water vapor transmission rate of the second packaging film layer 102 , for example, a film layer formed of SiON material may be used as the second packaging film layer 102 .

In combination with the above experimental results, it can be seen that when the display panel adopts the second encapsulation film layer 102 formed of SiON material, its hydrogen content is greater than that of the first encapsulation film layer 101 formed of SiOx material, if the first encapsulation film layer The thickness of 101 is relatively thin, and impurity hydrogen in the second packaging film layer 102 may pass through the first packaging film layer 101 to react with the channel layer in the oxide TFT, thereby causing white spots on the display panel. Therefore, it is necessary to rationally limit the thickness of the first packaging film layer 101 . In some embodiments, the thickness of the first packaging film layer 101 is greater than or equal to 0.3 microns. The applicant has found through research that when the thickness of the first packaging film layer 101 is greater than or equal to 0.3 microns, it can block the second packaging film layer 102, and limitedly prevent the impurity hydrogen contained in the second packaging film layer 102 from passing through the first packaging film layer 102. An encapsulation film layer 101 reacts with the channel layer of the oxide TFT.

In order to further prevent impurity hydrogen contained in the second packaging film layer 102 from passing through the first packaging film layer 101 and reacting with the channel layer of the oxide TFT, it can also be achieved by reducing the hydrogen content of the second packaging film layer 102 . The applicant has found through research that the hydrogen content of the second packaging film layer 102 is proportional to the thickness of the second packaging film layer 102, that is, the thicker the second packaging film layer 102, the greater its hydrogen content, and the second The hydrogen contained in the packaging film layer 102 is more likely to permeate through the first packaging film layer 101 . Therefore, the hydrogen content of the second packaging film layer 102 can be reduced by reducing the thickness of the second packaging film layer 102 .

To sum up, it is necessary to reasonably limit the thickness of the second packaging film layer 102 so as to reduce its hydrogen content as much as possible while meeting the protection requirements for the first packaging film layer 101 . In view of this, in some embodiments, the thickness of the second packaging film layer 102 is less than or equal to 1 micron.

As shown in FIG. 5, in some embodiments, the display panel further includes a substrate 6, the light-emitting layer 2 is disposed on the first side 601 of the substrate 6, and the second packaging film layer 102 covers the first packaging The film layer 101; the first side 601 of the substrate 6 is also provided with a first barrier dam 5 surrounding the light-emitting layer 2, and the top of the first barrier dam 5 is provided with a cover plate 4, and the cover plate 4, A filler encapsulation layer 31 is disposed in the space enclosed by the first barrier dam 5 and the substrate 6 .

Exemplarily, both the substrate 6 and the cover plate 4 are made of transparent glass material or transparent organic material.

Exemplarily, the first barrier dam 5 is disposed around the light emitting layer 2 to form a closed ring structure along the first side 601 parallel to the substrate 6 . In this embodiment, the shape of the ring structure surrounded by the first barrier dam 5 is not limited, and it may be a rectangle, a square, a circle, or a polygon. A certain space is reserved between the first barrier dam 5 and the light emitting layer 2 .

Exemplarily, the formation process of the display panel will be described below by taking a top-emitting OLED display panel as an example.

First, the light emitting layer 2 is formed on the first side 601 of the substrate 6 . Afterwards, SiOx material with a thickness of 1 μm is deposited on the light-emitting side of the light-emitting layer 2 (ie, the side away from the substrate 6 ) by chemical vapor deposition to form the first packaging film layer 101 covering the light-emitting layer 2 . After the formation of the first encapsulation film layer 101 is completed, SiON material with a thickness of 0.5 μm is deposited on the side of the first encapsulation film layer 101 away from the light-emitting layer 2 by chemical vapor deposition to form a coating covering the first encapsulation film layer 101. The second packaging film layer 102 . After the second encapsulation film layer 102 is formed, a fluid filler is injected between the first barrier dam 5 and the light-emitting layer 2 coated with the first encapsulation film layer 101 and the second encapsulation film layer 102, and the fluid filler solidifies Afterwards, the filler encapsulation layer 31 can be formed. Finally, the cover plate 4 and the above-formed structural layer are laminated with an optical adhesive to form an OLED display panel.

Based on the same inventive concept, combined with the descriptions of the display panels in the above embodiments, the present embodiment provides a display device that has the corresponding technical effects of the display panels in the above embodiments, which will not be repeated here.

A display device includes the display panel as described in the above embodiments.

It should be noted that some embodiments of the present application are described above. Other implementations are within the scope of the following claims. In some cases, the actions or steps recited in the claims can be performed in an order different from those in the above-described embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. Multitasking and parallel processing are also possible or may be advantageous in certain embodiments.

Each embodiment in the present application is described in a progressive manner, each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referred to each other.

The description of the present application has been presented for purposes of illustration and description, but is not intended to be exhaustive or to limit the application to the form disclosed. Many modifications and changes will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to better explain the principles of the application and the practical application, and to enable others of ordinary skill in the art to understand the application and design various embodiments with various modifications as are suited to the particular use.

Those of ordinary skill in the art should understand that: the discussion of any of the above embodiments is exemplary only, and is not intended to imply that the scope of the application (including claims) is limited to these examples; under the thinking of the application, the above embodiments or Combinations of technical features in different embodiments are also possible, steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the application as described above, which are not provided in details for the sake of brevity.

Although the application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of those embodiments will be apparent to those of ordinary skill in the art from the foregoing description.

The embodiments of the present application are intended to embrace all such alternatives, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent replacements, improvements, etc. within the spirit and principles of the embodiments of the present application shall be included within the protection scope of the present application.

Claims (10)

1. An encapsulating material, wherein the encapsulating material has a wave number of 1500cm in a Fourier infrared absorption spectrum ^-1 To 3500cm ^-1 The integrated area of absorption peak in the range of 500cm in wavenumber ^-1 To 3500cm ^-1 The integral area ratio of all absorption peaks in the range is 3% or less.

2. The packaging material of claim 1, wherein the packaging material is a silicon oxygen compound, and the proportion of the number of silicon oxygen bonds in the silicon oxygen compound to the total number of chemical bonds in the silicon oxygen compound is 97% or more.

3. An encapsulating film comprising the encapsulating material according to any one of claims 1 to 2.

4. A display panel comprising a light-emitting layer and an encapsulating layer covering at least a light-emitting side of the light-emitting layer, wherein the encapsulating layer is the encapsulating film layer according to claim 3 on a side facing the light-emitting layer.

5. The display panel of claim 4, wherein the encapsulation layer comprises a first encapsulation film layer and a second encapsulation film layer, the first encapsulation film layer covers the light emitting layer, the second encapsulation film layer is disposed on a side of the first encapsulation film layer away from the light emitting layer, and a water vapor transmittance of the second encapsulation film layer is smaller than that of the first encapsulation film layer.

6. The display panel of claim 5 wherein the second encapsulating film layer has a moisture vapor transmission rate of less than 0.001 grams per square meter per day.

7. The display panel according to claim 5, wherein the first encapsulation film layer has a thickness of 0.3 μm or more.

8. The display panel according to claim 5, wherein the thickness of the second encapsulation film layer is 1 μm or less.

9. The display panel according to claim 5, wherein the display panel further comprises a substrate, the light emitting layer is disposed on a first side of the substrate, and the second encapsulating layer encapsulates the first encapsulating layer; the first side of base plate still is equipped with around the first blocking dam of luminescent layer, the top of first blocking dam is provided with the apron, the apron first blocking dam with be provided with the filler encapsulated layer in the space that the base plate encloses.

10. A display device characterized by comprising the display panel according to any one of claims 4 to 9.

Images