CN115787060A - Rare earth perovskite nickel oxide high-pressure fluxing agent method crystal growth and application - Google Patents
Rare earth perovskite nickel oxide high-pressure fluxing agent method crystal growth and application Download PDFInfo
- Publication number
- CN115787060A CN115787060A CN202211337263.2A CN202211337263A CN115787060A CN 115787060 A CN115787060 A CN 115787060A CN 202211337263 A CN202211337263 A CN 202211337263A CN 115787060 A CN115787060 A CN 115787060A
- Authority
- CN
- China
- Prior art keywords
- crystal
- rare earth
- pressure
- growth
- nickel oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明涉及稀土钙钛矿镍氧化合物高气压助熔剂法晶体生长及应用,以NiO、R2O3为原料,R为稀土元素,采用碱助熔剂体系充入氧气条件下进行晶体生长,先升温至400‑500℃使原料充分熔化,然后降温至生长温度使晶体生长,氧气压力范围为5‑300bar,生长温度为150‑450℃,生长结束后得到稀土钙钛矿镍氧化合物RNiO3晶体。本发明利用碱助熔剂体系,将RNiO3晶体生长温度降至500℃以下,所需氧压降至300bar以下,大大减小生长过程中的危险性,提高了晶体尺寸,在更低条件下得到了相对更大尺寸的RNiO3晶体,晶体尺寸可达45‑60μm。
The invention relates to the crystal growth and application of rare earth perovskite nickel oxide compound high-pressure flux method. NiO and R 2 O 3 are used as raw materials, and R is a rare earth element. The crystal growth is carried out under the condition of filling oxygen with an alkali flux system. Raise the temperature to 400-500°C to fully melt the raw materials, then cool down to the growth temperature to grow the crystal, the oxygen pressure range is 5-300bar, the growth temperature is 150-450°C, and the rare earth perovskite nickel oxide compound RNiO 3 crystal is obtained after the growth is completed . The invention utilizes an alkali flux system to reduce the RNiO 3 crystal growth temperature to below 500°C and the required oxygen pressure to below 300bar, which greatly reduces the risk in the growth process, increases the crystal size, and obtains RNiO crystals under lower conditions. Relatively larger-sized RNiO 3 crystals were obtained, and the crystal size can reach 45‑60 μm.
Description
技术领域technical field
本发明本发明涉及稀土钙钛矿镍氧化合物高气压助熔剂法晶体生长及应用,属于晶体材料技术领域。The present invention relates to the crystal growth and application of rare earth perovskite nickel oxide compound high-pressure flux method and belongs to the technical field of crystal materials.
背景技术Background technique
1911年,汞的超导特性的发现开启了超导材料的研究。迄今为止发现的超导材料主要分为常规超导体和非常规超导体。常规超导体的超导起源可用BCS理论完美解释,而对于非常规超导体如铜基和铁基高温超导体,其超导机理目前还没有统一的、量化的理论解释。目前超导研究的关键基础科学问题集中于高温超导机理以及室温超导体的设计与发现。新型高温超导体的发现将为解决高温超导机理这一世界性难题提供新的材料平台和思路。In 1911, the discovery of the superconducting properties of mercury started the study of superconducting materials. The superconducting materials discovered so far are mainly divided into conventional superconductors and unconventional superconductors. The superconducting origin of conventional superconductors can be perfectly explained by BCS theory, but for unconventional superconductors such as copper-based and iron-based high-temperature superconductors, there is no unified and quantitative theoretical explanation for their superconducting mechanism. At present, the key basic scientific issues of superconductivity research focus on the mechanism of high-temperature superconductivity and the design and discovery of room-temperature superconductors. The discovery of new high-temperature superconductors will provide new material platforms and ideas for solving the worldwide problem of high-temperature superconducting mechanism.
2019年8月,斯坦福大学Hwang教授课题组利用激光脉冲沉积法成功在SrTiO3衬底上制备了Nd0.8Sr0.2NiO2薄膜,并发现了临界转变温度为9-15K的超导现象。随后人们相继在R1-xSrxNiO2(R=Nd,Pr,La)、La1-xCaxNiO2和Nd6Ni5O12薄膜中发现了超导。然而,多晶材料中未发现有超导现象,其原因可能是样品质量差。由于薄膜有限的探测体积,例如中子散射等测试都无法进行,严重阻碍了对其超导机理的研究。此外,镍基超导研究相关的基础科学问题,如稀土钙钛矿的磁性基态是什么?是否存在电荷密度波,自旋密度波等竞争序?是否在超导相温度区间以上也存在赝能隙相?奇异金属?单晶是解决以上关键基础科学问题以及研究镍基材料各向异性物理性能的理想平台。In August 2019, Professor Hwang's research group at Stanford University successfully prepared Nd 0.8 Sr 0.2 NiO 2 thin films on SrTiO 3 substrates by laser pulse deposition, and discovered superconductivity with a critical transition temperature of 9-15K. Subsequently, superconductivity was discovered in R 1-x Sr x NiO 2 (R=Nd, Pr, La), La 1-x Ca x NiO 2 and Nd 6 Ni 5 O 12 thin films. However, superconductivity was not found in polycrystalline materials, which may be due to poor sample quality. Due to the limited detection volume of the film, tests such as neutron scattering cannot be carried out, which seriously hinders the study of its superconducting mechanism. In addition, basic scientific issues related to the research of nickel-based superconductivity, such as what is the magnetic ground state of rare earth perovskite? Are there competing orders such as charge density waves and spin density waves? Does the pseudogap phase also exist above the temperature range of the superconducting phase? Exotic metal? Single crystal is an ideal platform to solve the above key basic scientific problems and study the anisotropic physical properties of nickel-based materials.
一价镍氧化物很难通过化学反应直接获得,因此,想要制备高质量的RNiO2单晶,必须先制备出高质量的RNiO3母相单晶,因此RNiO3单晶生长是研究低价镍氧化物超导性能需要攻克的难关。目前合成三价镍母相单晶的方法有两种,一个是高压助熔剂法,一个是高压浮区法,这两种方法都需要一个高的氧压来稳定住三价镍离子,且随着稀土离子半径的减小,所需要的氧压也会不断增大,这对于设备就有很高的要求。目前高压助熔剂生长RNiO3单晶多是采用氯化物做助熔剂在高温高等静压条件下生长,然而其仍无法获得大尺寸RNiO3单晶。目前有文献报道利用氯化物做助熔剂在2000bar氧气压力,1000℃的条件下生长了尺寸为10-15μm RNiO3(R=Nd,Sm,Gd,Dy)。Monovalent nickel oxides are difficult to obtain directly through chemical reactions. Therefore, in order to prepare high-quality RNiO 2 single crystals, high-quality RNiO 3 parent phase single crystals must be prepared first, so the growth of RNiO 3 single crystals is a low-cost research method. Nickel oxide superconductivity needs to overcome the difficulties. At present, there are two methods for synthesizing trivalent nickel parent phase single crystal, one is the high-pressure flux method, and the other is the high-pressure floating zone method. Both methods require a high oxygen pressure to stabilize the trivalent nickel ions. As the radius of rare earth ions decreases, the required oxygen pressure will also continue to increase, which has high requirements for equipment. At present, RNiO 3 single crystals grown by high-pressure flux mostly use chloride as flux to grow under high temperature and high isostatic pressure conditions, but it is still impossible to obtain large-sized RNiO 3 single crystals. At present, there are reports in the literature that 10-15 μm RNiO 3 (R=Nd, Sm, Gd, Dy) with a size of 10-15 μm was grown under the condition of 2000 bar oxygen pressure and 1000 ° C by using chloride as a flux.
发明内容Contents of the invention
针对现有技术的不足,尤其是现有生长温度、压力太高,得到的晶体尺寸太小的技术缺陷,本发明提供稀土钙钛矿镍氧化合物高气压助熔剂法晶体生长及应用。本发明通过探索新型助熔剂体系,在降低了生长温度及氧压的条件下,得到了更大尺寸的RNiO3晶体。Aiming at the deficiencies of the existing technology, especially the technical defects that the existing growth temperature and pressure are too high and the obtained crystal size is too small, the present invention provides crystal growth and application of rare earth perovskite nickel oxide compound high-pressure flux method. The invention obtains larger-sized RNiO 3 crystals under the condition of lowering the growth temperature and oxygen pressure by exploring a novel flux system.
本发明技术方案如下:Technical scheme of the present invention is as follows:
稀土钙钛矿镍氧化合物高气压助熔剂法晶体生长方法,包括步骤如下:A rare earth perovskite nickel oxide compound high-pressure flux method crystal growth method, including the following steps:
以NiO、R2O3为原料,R为稀土元素(R=Pr-Dy),采用碱助熔剂体系充入氧气条件下进行晶体生长,先升温至400-500℃使原料充分熔化,然后降温至生长温度使晶体生长,氧气压力范围为5-300bar,生长温度为150-450℃,生长结束后得到稀土钙钛矿镍氧化合物RNiO3晶体。Using NiO and R 2 O 3 as raw materials, R is a rare earth element (R=Pr-Dy), and the alkali flux system is used for crystal growth under the condition of filling oxygen. First, the temperature is raised to 400-500°C to fully melt the raw materials, and then the temperature is lowered. The crystal is grown at the growth temperature, the oxygen pressure range is 5-300bar, and the growth temperature is 150-450°C. After the growth is completed, the rare earth perovskite nickel oxide compound RNiO 3 crystal is obtained.
本发明制备得到的RNiO3晶体,存在金属-绝缘体相变,高温时为金属,属于正交晶系,空间群为Pbnm,相变温度随R离子半径减小而增大,在TN以下存在反铁磁有序。RNiO3是制备低价镍氧化合物RNiO2的母相材料。制备得到的RNiO3晶体,其粉末X射线衍射仪数据与粉末衍射标准PDF卡片一致,说明所生长的晶体RNiO3晶体,单晶解析确认为钙钛矿结构。The RNiO 3 crystal prepared by the present invention has a metal-insulator phase transition. It is a metal at high temperature and belongs to the orthorhombic crystal system. The space group is Pbnm. The phase transition temperature increases with the decrease of the R ion radius, and exists below T N antiferromagnetic order. RNiO 3 is the parent phase material for preparing low-valent nickel oxide compound RNiO 2 . The powder X-ray diffractometer data of the prepared RNiO 3 crystal is consistent with the powder diffraction standard PDF card, indicating that the grown crystal RNiO 3 crystal has a perovskite structure confirmed by single crystal analysis.
本发明方法制备得到的RNiO3晶体尺寸相比现有技术大大提高,晶体尺寸可达45-60μm。Compared with the prior art, the crystal size of RNiO3 prepared by the method of the invention is greatly improved, and the crystal size can reach 45-60 μm.
本发明制备得到的RNiO3晶体呈黑色,长方体形状,室温下稳定,无分解潮解现象。可根据需求调整生长周期,获得高质量RNiO3单晶,以用于进行物理测试。The RNiO 3 crystal prepared by the present invention is black, cuboid in shape, stable at room temperature, and has no decomposition and deliquescence phenomenon. The growth cycle can be adjusted according to requirements to obtain high-quality RNiO 3 single crystals for physical testing.
本发明制备得到的RNiO3单晶,出现金属-绝缘体相变,比如NdNiO3的金属-绝缘态相变发生在160K附近。The RNiO 3 single crystal prepared by the present invention has a metal-insulator phase transition, for example, the metal-insulator phase transition of NdNiO 3 occurs around 160K.
根据本发明,优选的,R=Nd、Sm、Gd或Dy。According to the present invention, preferably, R=Nd, Sm, Gd or Dy.
根据本发明,优选的,所述的碱助熔剂为NaOH、KOH中的一种或两种以上混合;当助溶剂为NaOH-KOH混合体系时,NaOH-KOH的摩尔比优选1:1。According to the present invention, preferably, the alkali flux is a mixture of one or more of NaOH and KOH; when the flux is a NaOH-KOH mixed system, the molar ratio of NaOH-KOH is preferably 1:1.
根据本发明,优选的,所述原料与助熔剂质量比为0.15:(1-2)。According to the present invention, preferably, the mass ratio of the raw material to the flux is 0.15: (1-2).
根据本发明,优选的,降温至生长温度的过程中,降温速率为15-0.4℃/h,进一步优选10-0.5℃/h。According to the present invention, preferably, during cooling down to the growth temperature, the cooling rate is 15-0.4°C/h, more preferably 10-0.5°C/h.
根据本发明,生长过程中不断加入氧气,维持氧气分压。According to the present invention, oxygen is continuously added during the growth process to maintain the partial pressure of oxygen.
根据本发明,优选的,生长温度为170-360℃,可以为200℃、250℃、350℃;优选的,氧气压力范围为5-270bar,可以为80bar、90bar、100bar、110bar、200bar、240bar、260bar、300bar。According to the present invention, preferably, the growth temperature is 170-360°C, which can be 200°C, 250°C, 350°C; preferably, the oxygen pressure range is 5-270bar, which can be 80bar, 90bar, 100bar, 110bar, 200bar, 240bar , 260bar, 300bar.
根据本发明,优选的,RNiO3晶体的生长周期为3-12天。According to the present invention, preferably, the growth cycle of RNiO 3 crystals is 3-12 days.
根据本发明,优选的,RNiO3晶体的生长条件为:以0.5-10℃/h的速率降温至250-200℃,生长周期为3-12天。According to the present invention, preferably, the growth conditions of RNiO 3 crystals are: cooling down to 250-200° C. at a rate of 0.5-10° C./h, and the growth period is 3-12 days.
根据本发明,稀土钙钛矿镍氧化合物高气压助熔剂法晶体生长方法,一种优选的实施方式,包括步骤如下:According to the present invention, the crystal growth method of rare earth perovskite nickel oxide compound high-pressure flux method, a preferred embodiment, includes the following steps:
(1)将NiO、R2O3、R为稀土元素,按化学计量比配料,混合均匀后压片,加入至配好的助熔剂体系中,混合均匀,得到晶体生长料;(1) NiO, R 2 O 3 , and R are rare earth elements, mixed according to the stoichiometric ratio, mixed evenly, pressed into tablets, added to the prepared flux system, mixed evenly, to obtain a crystal growth material;
所述助熔剂为:NaOH-KOH,其中NaOH、KOH摩尔比为(0-1):1;The flux is: NaOH-KOH, wherein the molar ratio of NaOH to KOH is (0-1):1;
所述原料与助熔剂质量比为0.15:(1-2);The mass ratio of the raw material to the flux is 0.15: (1-2);
(2)将步骤(1)所得晶体生长料放入铂金坩埚,充入氧气,调整压力,升温至400-500℃,保温使原料充分熔化,然后降温使晶体生长,即得稀土钙钛矿镍氧化合物RNiO3晶体;(2) Put the crystal growth material obtained in step (1) into a platinum crucible, fill it with oxygen, adjust the pressure, raise the temperature to 400-500°C, keep warm to fully melt the raw material, and then cool down to grow the crystal to obtain the rare earth perovskite nickel Oxygen compound RNiO 3 crystal;
所述晶体生长温度区间为170-400℃,所述氧气压力范围为5-300bar,降温速率为10-0.5℃/h。The crystal growth temperature range is 170-400° C., the oxygen pressure range is 5-300 bar, and the cooling rate is 10-0.5° C./h.
本发明上述晶体生长过程中,涉及化学反应式为:R2O3+2NiO+0.5O2→2RNiO3。In the above crystal growth process of the present invention, the chemical reaction formula involved is: R 2 O 3 +2NiO+0.5O 2 →2RNiO 3 .
根据本发明,钙钛矿镍氧化合物RNiO3晶体中晶格-电荷-自旋-轨道之间的耦合效应使其在新形态计算、生物电子界面以及电催化等前沿研究领域具有实际应用的潜力。比如,可以作为母相材料制备低价镍氧化合物RNiO2晶体;在新形态计算领域的应用,用于神经拟态计算等;在生物领域的应用,用于开发电化学生物传感器;在电催化领域的应用,用于电化学催化剂。According to the present invention, the coupling effect between lattice-charge-spin-orbit in the perovskite nickel-oxygen compound RNiO3 crystal makes it have the potential for practical application in frontier research fields such as new morphology computing, bioelectronic interface and electrocatalysis . For example, it can be used as a parent phase material to prepare low-priced nickel oxide compound RNiO 2 crystals; applications in the field of new morphology computing, for neuromorphic computing, etc.; applications in the field of biology, for the development of electrochemical biosensors; in the field of electrocatalysis applications for electrochemical catalysts.
本发明的有益效果如下:The beneficial effects of the present invention are as follows:
1、目前已有文献报道(Klein et al.Cryst.Growth Des.21,4230-4241(2021))利用氯化物做助熔剂在2000bar氧气压力,1000℃的条件下生长RNiO3晶体。与之相比,本发明首次利用碱助熔剂体系:一是将RNiO3(R=Pr-Dy)晶体生长温度降至400℃以下;二是将生长所需氧压降至300bar以下,大大减小生长过程中的危险性及对设备的要求;三是在此基础上提高了晶体尺寸,在更低条件下得到了相对更大尺寸的RNiO3晶体,晶体尺寸可达45-60μm。1. It has been reported in the literature (Klein et al. Cryst. Growth Des. 21, 4230-4241 (2021)) that RNiO 3 crystals were grown under the conditions of 2000 bar oxygen pressure and 1000 °C using chloride as a flux. In contrast, the present invention uses the alkali flux system for the first time: one is to reduce the growth temperature of RNiO 3 (R=Pr-Dy) crystals to below 400°C; the other is to reduce the oxygen pressure required for growth to below 300bar, greatly reducing Minimize the danger in the growth process and the requirements for equipment; the third is to increase the crystal size on this basis, and obtain relatively larger RNiO 3 crystals under lower conditions, and the crystal size can reach 45-60 μm.
2、本发明采用的助熔剂生长方法所需条件易于实现,操作简便,所需原料简单,便于购买。生长周期3-12天即可获得成型较大尺寸的RNiO3单晶。2. The conditions required by the flux growth method adopted in the present invention are easy to realize, easy to operate, and the required raw materials are simple and easy to purchase. The growth period is 3-12 days to obtain a large-sized RNiO 3 single crystal.
附图说明Description of drawings
图1是实施例1制备的NdNiO3晶体的微观形貌图;Fig. 1 is the NdNiO prepared by embodiment 1 The microscopic morphology figure of the crystal;
图2是实施例1制备的NdNiO3晶体的XRD图;Fig. 2 is the NdNiO prepared by embodiment 1 The XRD figure of the crystal;
图3是实施例2制备的NdNiO3晶体的微观形貌图;Fig. 3 is the NdNiO prepared by embodiment 2 The microscopic morphology figure of the crystal;
图4是实施例2制备的NdNiO3晶体的XRD图;Fig. 4 is the NdNiO prepared by
图5是实施例3制备的NdNiO3晶体的微观形貌图;Fig. 5 is the NdNiO prepared by embodiment 3 The microscopic morphology figure of the crystal;
图6是实施例3制备的NdNiO3晶体的XRD图;Fig. 6 is the NdNiO prepared by embodiment 3 XRD figure of the crystal;
图7是实施例4制备的NdNiO3晶体的微观形貌图;Fig. 7 is the NdNiO prepared by embodiment 4 The microscopic morphology figure of the crystal;
图8是实施例4制备的NdNiO3晶体的XRD图;Fig. 8 is the NdNiO3 crystal XRD pattern prepared by embodiment 4;
图9是实施例5制备的NdNiO3晶体的微观形貌图;Fig. 9 is the NdNiO prepared in embodiment 5 The microscopic morphology figure of the crystal;
图10是实施例5制备的NdNiO3晶体的XRD图;Fig. 10 is the NdNiO3 crystal XRD figure prepared by embodiment 5;
图11是实施例6制备的GdNiO3晶体的微观形貌图;Fig. 11 is the GdNiO prepared in embodiment 6 The microscopic morphology figure of the crystal;
图12是实施例6制备的GdNiO3晶体的XRD图;Fig. 12 is the XRD figure of the GdNiO3 crystal prepared by embodiment 6;
图13是实施例7制备的SmNiO3晶体的微观形貌图;Fig. 13 is the SmNiO prepared in embodiment 7 The microscopic morphology figure of the crystal;
图14是实施例7制备的SmNiO3晶体的XRD图;Fig. 14 is the XRD figure of the SmNiO crystal prepared in embodiment 7;
图15是实施例8制备的DyNiO3晶体的微观形貌图;Fig. 15 is the DyNiO prepared in embodiment 8 The microscopic morphology figure of the crystal;
图16是实施例8制备的DyNiO3晶体的XRD图;Fig. 16 is the DyNiO3 crystal XRD figure prepared by
图17是对比例1制备的材料的XRD图。FIG. 17 is an XRD pattern of the material prepared in Comparative Example 1.
具体实施方式Detailed ways
下面结合具体实施例对本发明进行进一步说明,但不限于此。以下提及的助熔剂比例均为摩尔比。The present invention will be further described below in conjunction with specific examples, but not limited thereto. The flux ratios mentioned below are all molar ratios.
实施例1Example 1
将NiO、Nd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=1:1)中,NiO、Nd2O3原料与助熔剂质量比为0.15:1,装入容积为Φ40mm×60mm的氧化铝坩埚中。将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=2bar,升温至400℃使其熔化,此时炉内氧气压力达到5bar,充分保温,降温至170℃,降温速度10℃/h,使其自发结晶,保温与降温过程中,维持氧气压力稳定在100bar+/-10bar,生长周期3天,即可获得NdNiO3微晶。Mix NiO and Nd 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=1:1), the mass ratio of NiO, Nd 2 O 3 raw materials to flux The ratio is 0.15:1, and it is loaded into an alumina crucible with a volume of Φ40mm×60mm. Put the crucible into the high-pressure furnace and fill it with high-purity oxygen so that the O 2 pressure = 2bar. Heat up to 400°C to melt it. At this time, the oxygen pressure in the furnace reaches 5bar. Fully keep the heat and cool down to 170°C. 10°C/h to make it spontaneously crystallize. During the heat preservation and cooling process, maintain the oxygen pressure at 100bar+/-10bar. The growth cycle is 3 days to obtain NdNiO 3 microcrystals.
测试NdNiO3微晶的微观形貌,如图1所示。由图1可知,得到的NdNiO3微晶的晶体尺寸在1-10μm。The microscopic morphology of NdNiO 3 crystallites was tested, as shown in Figure 1. It can be seen from Fig. 1 that the obtained NdNiO 3 crystallite has a crystal size of 1-10 μm.
测试NdNiO3微晶的X射线粉末衍射图谱,如图2所示。由图2可知,与标准卡片(PDF#04-013-9190)一致,说明得到的是正交晶系的NdNiO3晶体。The X-ray powder diffraction pattern of the tested NdNiO 3 crystallites is shown in Figure 2. It can be seen from Figure 2 that it is consistent with the standard card (PDF#04-013-9190), indicating that the obtained NdNiO 3 crystal is orthorhombic.
实施例2Example 2
将NiO,Nd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=1:1)中,NiO,Nd2O3原料与助熔剂质量比为0.15:1,装入容积为Φ40mm×60mm的氧化铝坩埚中。将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=88bar,升温至400℃使其熔化,此时炉内氧气压力达到200bar,充分保温,降温至170℃,降温速度10℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在200bar+/-10bar,生长周期3天,即可获得NdNiO3晶体。Mix NiO and Nd 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=1:1), the mass ratio of NiO, Nd 2 O 3 raw materials to flux The ratio is 0.15:1, and it is loaded into an alumina crucible with a volume of Φ40mm×60mm. Put the crucible into the high-pressure furnace, fill it with high-purity oxygen, make the O 2 pressure = 88bar, heat up to 400°C to make it melt, at this time the oxygen pressure in the furnace reaches 200bar, fully keep warm, cool down to 170°C, and the
测试NdNiO3晶体的微观形貌,如图3所示。由图3可知,得到的NdNiO3微晶的晶体尺寸在10-20μm。The microscopic morphology of NdNiO 3 crystals was tested, as shown in Figure 3. It can be seen from Fig. 3 that the obtained NdNiO 3 crystallite has a crystal size of 10-20 μm.
测试NdNiO3晶体的X射线粉末衍射图谱,如图4所示。由图4可知,其X射线粉末衍射图谱与标准卡片(PDF#04-013-9190)一致,说明得到的是正交晶系的NdNiO3晶体。The X-ray powder diffraction pattern of the tested NdNiO 3 crystal is shown in Figure 4. It can be seen from Figure 4 that its X-ray powder diffraction pattern is consistent with the standard card (PDF#04-013-9190), indicating that the obtained NdNiO 3 crystal is orthorhombic.
实施例3Example 3
将NiO,Nd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=1:1)中,NiO,Nd2O3原料与助熔剂质量比为0.15:1,装入容积为Φ40mm×60mm的氧化铝坩埚中。将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=102bar,升温至400℃使其熔化,此时炉内氧气压力达到200bar,充分保温,降温至360℃,降温速度5℃/h,保温2h,降温至260℃,降温速度1℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在200bar+/-10bar,生长周期7天,即可获得NdNiO3晶体。Mix NiO and Nd 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=1:1), the mass ratio of NiO, Nd 2 O 3 raw materials to flux The ratio is 0.15:1, and it is loaded into an alumina crucible with a volume of Φ40mm×60mm. Put the crucible into a high-pressure furnace and fill it with high-purity oxygen so that the O 2 pressure = 102bar, and heat up to 400°C to melt it. At this time, the oxygen pressure in the furnace reaches 200bar, fully keep it warm, and cool down to 360°C. 5°C/h, keep warm for 2h, cool down to 260°C, and cool down at a rate of 1°C/h to make it spontaneously crystallize. During the heat preservation and cooling process, keep the oxygen pressure at 200bar+/-10bar, and grow in 7 days to obtain NdNiO 3 crystals.
测试NdNiO3晶体的微观形貌,如图5所示。由图5可知,得到的NdNiO3微晶的晶体尺寸在20-40μm。Test the microscopic morphology of NdNiO 3 crystals, as shown in Figure 5. It can be seen from Fig. 5 that the obtained NdNiO 3 crystallite has a crystal size of 20-40 μm.
测试NdNiO3晶体的X射线粉末衍射图谱,如图6所示。由图6可知,其X射线粉末衍射图谱与标准卡片(PDF#04-013-9190)一致,说明得到的是正交晶系的NdNiO3晶体。The X-ray powder diffraction pattern of the tested NdNiO 3 crystal is shown in Figure 6. It can be seen from Figure 6 that its X-ray powder diffraction pattern is consistent with the standard card (PDF#04-013-9190), indicating that the obtained NdNiO 3 crystal is orthorhombic.
实施例4Example 4
将NiO,Nd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=0:1)中,NiO,Nd2O3原料与助熔剂质量比为0.15:2,装入容积为Φ40mm×60mm的铂金坩埚中,下入铂金丝诱导结晶,将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=106bar,升温至400℃使其熔化,此时炉内氧气压力达到240bar,充分保温,降温至360℃,降温速度5℃/h,保温2h,降温至260℃,降温速度1℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在240bar+/-10bar,生长周期7天,即可获得NdNiO3晶体。Mix NiO and Nd 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=0:1), the mass ratio of NiO, Nd 2 O 3 raw materials to flux 0.15:2, put it into a platinum crucible with a volume of Φ40mm×60mm, put a platinum wire into it to induce crystallization, put the crucible into a high-pressure furnace, fill it with high-purity oxygen, make the O2 pressure = 106bar, and raise the temperature to 400 ℃ to make it melt, at this time the oxygen pressure in the furnace reaches 240bar, fully keep warm, cool down to 360°C, cool down at a rate of 5°C/h, keep warm for 2h, cool down to 260°C, cool down at a rate of 1°C/h, make it spontaneously crystallize, keep warm During the cooling process, the oxygen pressure is maintained at 240bar+/-10bar, and the growth period is 7 days to obtain NdNiO 3 crystals.
测试NdNiO3晶体的微观形貌,如图7所示。由图7可知,得到的NdNiO3微晶的晶体尺寸在30-40μm。The microscopic morphology of NdNiO 3 crystals was tested, as shown in Figure 7. It can be seen from Fig. 7 that the obtained NdNiO 3 crystallite has a crystal size of 30-40 μm.
测试NdNiO3晶体的X射线粉末衍射图谱,如图8所示。由图8可知,其X射线粉末衍射图谱与标准卡片(PDF#04-013-9190)一致,说明得到的是正交晶系的NdNiO3晶体。The X-ray powder diffraction pattern of the tested NdNiO 3 crystal is shown in Figure 8. It can be seen from Figure 8 that its X-ray powder diffraction pattern is consistent with the standard card (PDF#04-013-9190), indicating that the obtained NdNiO 3 crystal is orthorhombic.
实施例5Example 5
将NiO,Nd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=0:1)中,NiO,Nd2O3原料与助熔剂质量比为0.15:2,装入容积为Φ40mm×60mm的铂金坩埚中,下入铂金丝诱导结晶,将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=112bar,升温至400℃使其熔化,此时炉内氧气压力达到260bar,充分保温,降温至350℃,降温速度2.5℃/h,保温2h,降温至250℃,降温速度0.5℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在260bar+/-10bar,生长周期12天,即可获得NdNiO3晶体。Mix NiO and Nd 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=0:1), the mass ratio of NiO, Nd 2 O 3 raw materials to flux 0.15:2, put it into a platinum crucible with a volume of Φ40mm×60mm, put a platinum wire into it to induce crystallization, put the crucible into a high-pressure furnace, fill it with high-purity oxygen, make the O2 pressure = 112bar, and raise the temperature to 400 ℃ to make it melt, at this time the oxygen pressure in the furnace reaches 260bar, fully keep warm, cool down to 350°C, cool down at a rate of 2.5°C/h, keep warm for 2h, cool down to 250°C, cool down at a rate of 0.5°C/h, make it spontaneously crystallize, keep warm During the cooling process, the oxygen pressure is maintained at 260bar+/-10bar, and the growth period is 12 days to obtain NdNiO 3 crystals.
测试NdNiO3晶体的微观形貌,如图9所示。由图9可知,得到的NdNiO3微晶的晶体尺寸在40-60μm。The microscopic morphology of NdNiO 3 crystals was tested, as shown in Figure 9. It can be seen from Fig. 9 that the obtained NdNiO 3 crystallite has a crystal size of 40-60 μm.
测试NdNiO3晶体的X射线粉末衍射图谱,如图10所示。由图10可知,其X射线粉末衍射图谱与标准卡片(PDF#04-013-9190)一致,说明得到的是正交晶系的NdNiO3晶体。The X-ray powder diffraction pattern of the tested NdNiO 3 crystal is shown in Figure 10. It can be seen from Figure 10 that its X-ray powder diffraction pattern is consistent with the standard card (PDF#04-013-9190), indicating that the obtained NdNiO 3 crystal is orthorhombic.
实施例6Example 6
将NiO,Gd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=1:1)中,NiO,Gd2O3原料与助熔剂质量比为0.15:2,装入容积为Φ40mm×60mm的铂金坩埚中,下入铂金丝诱导结晶,将坩埚放入高压炉中,向内充入高纯氧气,使得PO2=112bar,升温至400℃使其熔化,此时炉内氧气压力达到260bar,充分保温,降温至350℃,降温速度2.5℃/h,保温2h,降温至250℃,降温速度0.5℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在260bar+/-10bar,生长周期3天,即可获得GdNiO3晶体。Mix NiO and Gd 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=1:1), the mass ratio of NiO, Gd 2 O 3 raw materials to flux 0.15:2, put it into a platinum crucible with a volume of Φ40mm×60mm, put a platinum wire to induce crystallization, put the crucible into a high-pressure furnace, fill it with high-purity oxygen, make PO 2 =112bar, and heat up to 400°C Make it melt, at this time the oxygen pressure in the furnace reaches 260bar, fully keep warm, cool down to 350°C, cool down at a rate of 2.5°C/h, keep warm for 2h, cool down to 250°C, cool down at a rate of 0.5°C/h, make it spontaneously crystallize, keep warm and During the cooling process, the oxygen pressure is maintained at 260bar+/-10bar, and the growth period is 3 days to obtain GdNiO 3 crystals.
测试GdNiO3晶体的微观形貌,如图11所示。由图11可知,得到的GdNiO3晶体尺寸在1-10μm。The microscopic morphology of GdNiO 3 crystals was tested, as shown in Figure 11. It can be seen from Fig. 11 that the crystal size of the obtained GdNiO 3 is in the range of 1-10 μm.
测试GdNiO3晶体的X射线粉末衍射图谱,如图12所示。由图12可知,其X射线粉末衍射图谱与标准卡片(PDF#01-089-7728)一致,说明得到的是正交晶系的GdNiO3晶体。The X-ray powder diffraction pattern of the tested GdNiO 3 crystal is shown in Figure 12. It can be seen from Figure 12 that its X-ray powder diffraction pattern is consistent with the standard card (PDF#01-089-7728), indicating that the obtained GdNiO 3 crystal is orthorhombic.
实施例7Example 7
将NiO,Sm2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=1:1)中,NiO,Sm2O3原料与助熔剂质量比为0.15:2,装入容积为Φ40mm×60mm的铂金坩埚中,将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=114bar,升温至400℃使其熔化,此时炉内氧气压力达到270bar,充分保温,降温至200℃,降温速度10℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在270bar+/-10bar,生长周期3天,即可获得SmNiO3晶体。Mix NiO and Sm 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=1:1), the mass ratio of NiO, Sm 2 O 3 raw materials to flux 0.15:2, put it into a platinum crucible with a volume of Φ40mm×60mm, put the crucible into a high-pressure furnace, fill it with high-purity oxygen, make O2 pressure = 114bar, heat up to 400°C to melt, at this time Oxygen pressure in the furnace reaches 270bar, keep warm enough, cool down to 200°C, and cool down at a rate of 10°C/h to make it spontaneously crystallize, keep the oxygen pressure at 270bar+/-10bar during the heat preservation and cooling process, and grow in 3 days, you can get SmNiO 3 crystals.
测试SmNiO3晶体的微观形貌,如图13所示。由图13可知,得到的SmNiO3晶体尺寸在10-30μm。The microscopic morphology of the SmNiO 3 crystal was tested, as shown in Figure 13. It can be seen from Fig. 13 that the crystal size of the obtained SmNiO 3 is 10-30 μm.
测试SmNiO3晶体的X射线粉末衍射图谱,如图14所示。由图14可知,其X射线粉末衍射图谱与标准卡片(PDF#01-071-5269)一致,说明得到的是正交晶系的SmNiO3晶体。The X-ray powder diffraction pattern of the tested SmNiO 3 crystal is shown in Figure 14. It can be seen from Figure 14 that its X-ray powder diffraction pattern is consistent with the standard card (PDF#01-071-5269), indicating that the obtained SmNiO 3 crystal is orthorhombic.
实施例8Example 8
将NiO,Dy2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系NaOH-KOH(NaOH:KOH=1:1)中,NiO,Dy2O3原料与助熔剂质量比为0.15:2,装入容积为Φ40mm×60mm的铂金坩埚中,将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=101bar,升温至500℃使其熔化,此时炉内氧气压力达到260bar,充分保温,降温至200℃,降温速度12℃/h,使其自发结晶,保温与降温过程中,维持氧气压力在260bar+/-10bar,生长周期3天,即可获得DyNiO3晶体。Mix NiO and Dy 2 O 3 according to the stoichiometric ratio, mix them evenly and press into tablets, add them to the flux system NaOH-KOH (NaOH:KOH=1:1), the mass ratio of NiO, Dy 2 O 3 raw materials to flux 0.15:2, put it into a platinum crucible with a volume of Φ40mm×60mm, put the crucible into a high-pressure furnace, fill it with high-purity oxygen, make the O2 pressure = 101bar, and heat it up to 500°C to melt it. Oxygen pressure in the furnace reaches 260bar, keep warm enough, cool down to 200°C, and cool down at a rate of 12°C/h to make it spontaneously crystallize. During the heat preservation and cooling process, keep the oxygen pressure at 260bar+/-10bar, and the growth cycle is 3 days, you can get DyNiO 3 crystals.
测试DyNiO3晶体的微观形貌,如图15所示。由图15可知,得到的DyNiO3晶体尺寸在50-70μm。The microscopic morphology of the DyNiO 3 crystal was tested, as shown in Figure 15. It can be seen from Fig. 15 that the obtained DyNiO 3 crystal size is 50-70 μm.
测试DyNiO3晶体的X射线粉末衍射图谱,如图16所示。由图16可知,其X射线粉末衍射图谱与标准卡片(PDF#01-089-7495)一致,说明得到的是正交晶系的DyNiO3晶体。The X-ray powder diffraction pattern of the tested DyNiO 3 crystal is shown in FIG. 16 . It can be seen from Figure 16 that its X-ray powder diffraction pattern is consistent with the standard card (PDF #01-089-7495), indicating that the obtained DyNiO 3 crystal is orthorhombic.
对比例1Comparative example 1
目前已有文献报道(Klein et al.Cryst.Growth Des.21,4230-4241(2021))利用氯化物做助熔剂在2000bar氧气压力,1000℃的条件下生长RNiO3晶体。At present, it has been reported in the literature (Klein et al. Cryst. Growth Des. 21, 4230-4241 (2021)) to grow RNiO 3 crystals under the conditions of 2000 bar oxygen pressure and 1000 °C using chloride as a flux.
本对比例将NiO,Nd2O3按化学计量比配料,混合均匀后压片,加入到助熔剂体系LiCl-KCl(LiCl:KCl=6:4)中,NiO,Nd2O3原料与助熔剂质量比为0.1:1,装入容积为Φ40mm×60mm的氧化铝坩埚中,将坩埚放入高压炉中,向内充入高纯氧气,使得O2压力=97bar,升温至650℃使其熔化,此时炉内氧气压力达到300bar,充分保温,降温至50℃,降温速度10℃/h,其自发结晶,保温与降温过程中,维持氧气压力在300bar+/-10bar,生长周期5天,得到产物。In this comparative example, NiO and Nd 2 O 3 were dosed according to the stoichiometric ratio, mixed evenly and then pressed into tablets, and added to the flux system LiCl-KCl (LiCl:KCl=6:4), NiO, Nd 2 O 3 raw materials and auxiliary The flux mass ratio is 0.1:1, put it into an alumina crucible with a volume of Φ40mm×60mm, put the crucible into a high-pressure furnace, and fill it with high-purity oxygen to make the O2 pressure = 97bar, and raise the temperature to 650°C to make it Melting, at this time the oxygen pressure in the furnace reaches 300bar, fully keep warm, cool down to 50°C, and the cooling rate is 10°C/h, it spontaneously crystallizes, maintain the oxygen pressure at 300bar+/-10bar during the heat preservation and cooling process, and the growth cycle is 5 days, get the product.
测试产物的X射线粉末衍射图谱,如图17所示。由图17可知,其X射线粉末衍射图谱显示产物为NdClO,说明利用LiCl-KCl助熔剂体系在650℃,300bar氧气压力条件下未得到NdNiO3晶体。The X-ray powder diffraction pattern of the test product is shown in Figure 17. It can be seen from Figure 17 that the X-ray powder diffraction pattern shows that the product is NdClO, indicating that NdNiO 3 crystals were not obtained under the conditions of 650 ° C and 300 bar oxygen pressure using the LiCl-KCl flux system.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211337263.2A CN115787060B (en) | 2022-10-28 | 2022-10-28 | High-pressure flux method crystal growth of rare earth perovskite nickel oxide compound and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211337263.2A CN115787060B (en) | 2022-10-28 | 2022-10-28 | High-pressure flux method crystal growth of rare earth perovskite nickel oxide compound and application thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115787060A true CN115787060A (en) | 2023-03-14 |
CN115787060B CN115787060B (en) | 2025-03-11 |
Family
ID=85434280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202211337263.2A Active CN115787060B (en) | 2022-10-28 | 2022-10-28 | High-pressure flux method crystal growth of rare earth perovskite nickel oxide compound and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115787060B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117127260A (en) * | 2023-07-26 | 2023-11-28 | 山东大学 | Method for growing perovskite nickel oxide compound monocrystal under normal pressure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104746128A (en) * | 2015-02-10 | 2015-07-01 | 中国科学院物理研究所 | Large-size high-pressure oxide single crystal growth method |
CN106480413A (en) * | 2016-12-12 | 2017-03-08 | 北京科技大学 | A kind of preparation method of rare-earth Ni-base oxide polycrystal film material |
-
2022
- 2022-10-28 CN CN202211337263.2A patent/CN115787060B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104746128A (en) * | 2015-02-10 | 2015-07-01 | 中国科学院物理研究所 | Large-size high-pressure oxide single crystal growth method |
CN106480413A (en) * | 2016-12-12 | 2017-03-08 | 北京科技大学 | A kind of preparation method of rare-earth Ni-base oxide polycrystal film material |
Non-Patent Citations (2)
Title |
---|
HONG ZHENG, ET AL.: "High pO2 Floating Zone Crystal Growth of the Perovskite Nickelate PrNiO3", 《CRYSTALS》, vol. 9, 26 June 2019 (2019-06-26), pages 1 - 12 * |
YANNICK MAXIMILIAN KLEIN, ET AL.: "RENiO3 Single Crystals (RE = Nd, Sm, Gd, Dy, Y, Ho, Er, Lu) Grown from Molten Salts under 2000 bar of Oxygen Gas Pressure", 《CRYST. GROWTH DES.》, vol. 21, 11 June 2021 (2021-06-11), pages 4230 - 4241 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117127260A (en) * | 2023-07-26 | 2023-11-28 | 山东大学 | Method for growing perovskite nickel oxide compound monocrystal under normal pressure |
Also Published As
Publication number | Publication date |
---|---|
CN115787060B (en) | 2025-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Li et al. | Uniform colloidal spheres for (Y1− x Gd x) 2O3 (x= 0–1): Formation mechanism, compositional impacts, and physicochemical properties of the oxides | |
Kimura | Molten salt synthesis of ceramic powders | |
Rao | Chemical synthesis of solid inorganic materials | |
Rao et al. | Essentials of inorganic materials synthesis | |
Liu et al. | Effect of excess Nb2O5 on the growth behavior of KSr2Nb5O15 particles by molten salt synthesis | |
DE4447578A1 (en) | Ternary lithium mixed oxide cathode material for lithium batteries | |
CN108550822A (en) | A kind of lanthanum, the nickelic ternary anode material of lithium battery of magnesium codope and preparation method | |
CN112374537A (en) | Preparation method of metal vanadate nano composite material | |
CN109879333A (en) | Method for preparing core-shell structure lithium battery cathode material by secondary molten salt method | |
CN115787060A (en) | Rare earth perovskite nickel oxide high-pressure fluxing agent method crystal growth and application | |
Roth et al. | Crystal chemistry of cerium titanates, tantalates and niobates | |
Zhu et al. | Engineering crystal orientation of cathode for advanced lithium‐ion batteries: a minireview | |
CN117219751A (en) | Nickel-iron-manganese-based layered positive electrode material of radial sodium ion battery, preparation method of nickel-iron-manganese-based layered positive electrode material and sodium ion battery | |
CN113279061B (en) | Preparation method of electronic copper-plated oxide high-temperature superconducting material PCCO single crystal | |
CN100564256C (en) | The synthetic method of the uniform spherical doped polycrystalline lithium niobate material of composition | |
Quasim et al. | Single crystal growth and characterization of pure and sodium-modified copper tartrate | |
CN101319383B (en) | A kind of preparation method of nano barium zirconate | |
CN115353151A (en) | A kind of synthetic method of rare earth cobalt-based oxide electronic phase change material | |
US4792377A (en) | Flux growth of sodium beta" alumina | |
CN1307330C (en) | La1-XPbXMnO3 compound ordered nano-line array and method for preparing same | |
US9708728B1 (en) | Growth of metal oxide single crystals from alkaline-earth metal fluxes | |
CN114411251A (en) | A method for growing high-quality CLLB crystals using a moving heater method | |
CN107190198A (en) | A kind of three element CoZnFe alloys of β Mn phases and preparation method thereof | |
RU2808895C1 (en) | Method for synthesis of barium-lanthanum fluoride | |
CN1390988A (en) | Preparation method of trivalent cerium ion doped yttrium aluminate lutetium aluminate and lutetium yttrium aluminate polycrystal material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |