CN115775964A - Novel coupler with reconfigurable coupling coefficient based on HMCSIW - Google Patents

Abstract

The present invention provides a novel coupling coefficient reconfigurable coupler based on HMCSIW, which includes a dielectric substrate, a first metal layer and a second metal layer on the upper and lower surfaces of the dielectric substrate, and the first metal layer includes two symmetrically arranged metal patches , each metal patch includes a half-mode comb-like line substrate integrated waveguide, a trapezoidal transition zone and a quarter-circle arc-shaped microstrip line, and the two ends of the half-mode comb-like line substrate integrated waveguide are respectively connected to the trapezoidal In the transition zone, the ends of the trapezoidal transition zone are respectively connected to arc-shaped microstrip lines. The first metal layer is provided with several U-shaped slot pairs and coupling coefficient reconstruction components. The U-shaped slot pairs include upper U-shaped slots and lower U-shaped slots. There is a gap between the open edges of the two half-mode comb line substrate integrated waveguides, and a coupling coefficient reconstruction component is provided at the gap; the invention can change the size of the coupling coefficient without changing the size of the coupler, and can realize multiple A switching of the coupling coefficient.

Description

A Novel Coupler with Reconfigurable Coupling Coefficient Based on HMCSIW

technical field

The invention relates to a novel coupler with reconfigurable coupling coefficient based on HMCSIW, which belongs to the technical field of communication.

Background technique

Substrate Integrated Waveguide (SIW) has attracted the attention of many scholars for its low-cost and planar characteristics, and SIW-based integrated circuits have been widely used in wireless communication systems. However, due to the presence of metal vias, an additional RF choke is required when accessing active devices loaded on the SIW. As an extension of SIW, Comb-Like Substrate Integrated Waveguide (CSIW) uses a set of quarter-wavelength microstrip open-circuit stub lines to replace metal vias to form an equivalent electric wall to confine electromagnetic waves in the waveguide. . Since the top and bottom metal layers in CSIW are independent, the input and output ports can be isolated from the ground plane for easy integration with active devices. CSIW-based devices are typically larger than similar SIW devices due to the use of a set of quarter-wavelength microstrip open stub lines.

In order to meet the development needs of miniaturization, a half-mode comb-like line substrate-integrated waveguide (HMCSIW) is proposed. HMCSIW is to halve the size of CSIW circuits, and its longitudinal open edges have the natural advantage of being directly integrated with active devices.

In wireless communication systems, couplers are an important part of transceivers or phased array antennas. Publication "Jin H, Zhu Z, Cheng R. Novel broadband coupler based on corrugated half modesubstrate integrated waveguide [J]. IEICE Electronics Express, 2015:12.20150896." DOI: https://doi.org/10.1587/elex.12.20150896 , proposed a HMCSIW-based broadband coupler, where the coupling occurs on an equivalent magnetic wall between two parallel HMCSIWs. However, under this structure, the coupling coefficient can only be changed by changing the size, that is, the coupling coefficient can be changed by changing the distance between two parallel half-mode comb-like line substrate integrated waveguides HMCSIW.

In the past research on a large number of couplers based on comb-like line substrate integrated waveguides, there is no coupler that can digitally control the coupling coefficient. Therefore, it is of great significance to study the coupler that digitally regulates the coupling coefficient. The above problems should be considered and solved in the design process of the coupler based on the comb-like line substrate integrated waveguide.

Contents of the invention

The purpose of the present invention is to provide a new coupler with reconfigurable coupling coefficient based on HMCSIW to solve the problem that it is difficult to control the coupling coefficient by changing the size of the coupler to change the coupling coefficient under the existing structural design in the prior art.

Technical solution of the present invention is:

A new coupler with reconfigurable coupling coefficient based on HMCSIW, including a dielectric substrate, a first metal layer and a second metal layer on the upper and lower surfaces of the dielectric substrate, the first metal layer includes two symmetrically arranged metal patches, each The metal patch includes a half-mode comb-like line substrate integrated waveguide, a trapezoidal transition area and a quarter-arc microstrip line. The ends of the transition zone are respectively connected to arc-shaped microstrip lines. The first metal layer is provided with several U-shaped slot pairs and coupling coefficient reconstruction components. The U-shaped slot pairs include upper U-shaped slots and lower U-shaped slots, and the upper U-shaped slots and the lower U-shaped slots are symmetrically arranged between the open edges of the two half-mode comb-like line substrate integrated waveguides, and a gap is provided between the open edges of the two half-mode comb-like line substrate integrated waveguides, and a gap is set at the gap. There is a coupling coefficient reconstruction component.

Further, the coupling coefficient reconstruction component includes a plurality of PIN diodes, a plurality of first capacitors and a plurality of second capacitors, the center of the PIN diodes is symmetrically arranged at the gap, and the PIN diodes are respectively arranged between the upper U-shaped groove and the lower U-shaped groove, Both sides of the upper U-shaped groove are respectively provided with first capacitors, and both sides of the lower U-shaped groove are respectively provided with second capacitors. One end of the PIN diode is respectively connected to both sides of the upper U-shaped groove through the first capacitor, and the other end of the PIN diode One end is respectively connected to both sides of the lower U-shaped slot through the second capacitor.

Further, the PIN diodes of the coupling coefficient reconstruction component are arranged at the gap every quarter of the working wavelength.

Further, the insides of the integrated waveguides of the two half-mode comb-like line substrates are arranged in parallel.

Further, the impedances of the curved microstrip line and the trapezoidal transition region are both 50 ohms.

Further, among the two symmetrically arranged metal patches, the ends of the arc-shaped microstrip line of the upper layer metal patch respectively form a coupled port and an isolation port, and the ends of the arc-shaped microstrip line of the lower layer metal patch respectively An input port and a through port are formed.

Further, the adjustment of the coupling coefficient is realized by controlling the on-off of the PIN diode of the coupling coefficient reconstruction component through the direct current bias.

Further, the coupling coefficient adjustment process of the new HMCSIW-based coupler with reconfigurable coupling coefficient is that by controlling the number of PIN diodes of the coupling coefficient reconstruction component to increase, the energy transfer is strengthened and the coupling coefficient is increased. ; The conduction number of the PIN diodes of the reconstruction component is reduced by controlling the coupling coefficient, so that the energy transmission is weakened, and the coupling coefficient is reduced.

The beneficial effects of the present invention are:

1. This new coupler with reconfigurable coupling coefficient based on HMCSIW can change the size of the coupling coefficient, and can realize switching of various coupling coefficients without changing the size of the coupler. The reconfigurable performance of the coupling coefficient of the comb-like line substrate integrated waveguide is realized, and the working performance of the coupler in each state is maintained at the same time.

2. The present invention can cut off the DC bias voltage for the PIN diode by connecting the PIN diode and the half-mode comb line substrate integrated waveguide HMCSIW on both sides with a capacitor, so that each PIN diode can be controlled separately The on-off of the coupler can realize flexible switching between various coupling coefficients without changing the size of the coupler.

3. This new coupling coefficient reconfigurable coupler based on HMCSIW can realize the digital control of the coupling coefficient by controlling the number of on or off PIN diodes between two HMCSIWs. It has been verified by experiments that the phase Stable, the working bandwidth, reflection coefficient and isolation performance in each state are good.

Description of drawings

FIG. 1 is a schematic structural diagram of a novel coupling coefficient reconfigurable coupler based on HMCSIW according to an embodiment of the present invention;

Fig. 2 is a schematic diagram of the structure of the half-mode comb line substrate integrated waveguide and coupling coefficient reconstruction component in the embodiment;

Fig. 3 is a schematic diagram of S-parameter and phase difference simulation of a specific example of a comb-like line substrate integrated waveguide reconfigurable coupler under zero diode conduction;

Fig. 4 is a schematic diagram of the S-parameter and phase difference simulation of a specific example of the comb-like line substrate integrated waveguide reconfigurable coupler under the conduction of one diode;

Fig. 5 is a schematic diagram of S-parameter and phase difference simulation of a specific example of a comb-like line substrate-integrated waveguide reconfigurable coupler under the conduction of two diodes;

Fig. 6 is a schematic diagram of S-parameter and phase difference simulation of a specific example of a comb-like line substrate-integrated waveguide reconfigurable coupler under the conduction of three diodes;

Fig. 7 is a schematic diagram of S-parameter and phase difference simulation of a specific example of a comb-like line substrate-integrated waveguide reconfigurable coupler under the conduction of four diodes;

Fig. 8 is a schematic diagram of S-parameter and phase difference simulation of a specific example of a comb-like line substrate-integrated waveguide reconfigurable coupler under the conduction of five diodes;

Fig. 9 is a schematic diagram illustrating the S-parameters and phase differences of the specific example of the comb-like line substrate integrated waveguide reconfigurable coupler in six cases;

Among them: 1-dielectric substrate, 2-first metal layer, 3-gap, 4-U-shaped slot pair, 5-coupling coefficient reconstruction component;

21-Half-mode comb line substrate integrated waveguide, 22-Trapezoid transition zone, 23-Arc microstrip line;

41-upper U-shaped groove, 42-lower U-shaped groove;

51-PIN diode, 52-first capacitor, 53-second capacitor.

Detailed ways

Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

Example

A new coupling coefficient reconfigurable coupler based on HMCSIW, as shown in Figure 1, includes a dielectric substrate 1, the upper and lower surfaces of the dielectric substrate 1 are respectively provided with a first metal layer 2 and a second metal layer, the first metal layer 2 includes Two symmetrically arranged metal patches, each metal patch includes a half-mode comb-like line substrate integrated waveguide 21, a trapezoidal transition area 22 and a quarter-circle arc-shaped microstrip line 23, the half-mode comb-like line The two ends of the line-substrate integrated waveguide 21 are respectively connected to the trapezoidal transition area 22, and the ends of the trapezoidal transition area 22 are respectively connected to the arc-shaped microstrip line 23. The first metal layer 2 is provided with several U-shaped slot pairs 4 and coupling coefficient reconstruction The assembly 5, the U-shaped groove pair 4 includes an upper U-shaped groove 41 and a lower U-shaped groove 42, and the upper U-shaped groove 41 and the lower U-shaped groove 42 are symmetrically arranged on the two half-mode comb-like line substrate integrated waveguides 21 respectively. Between the open edges, a gap 3 is provided between the open edges of the two half-mode comb-like line substrate integrated waveguides 21 , and a coupling coefficient reconstruction component 5 is provided at the gap 3 .

The novel HMCSIW-based coupler with reconfigurable coupling coefficient can change the size of the coupling coefficient without changing the size of the coupler, and can realize switching of various coupling coefficients. The reconfigurable performance of the coupling coefficient of the comb-like line substrate integrated waveguide is realized, and the working performance of the coupler in each state is maintained at the same time.

As shown in Figure 2, the coupling coefficient reconstruction component 5 includes several PIN diodes 51, some first capacitors 52 and some second capacitors 53, and the center of the PIN diodes 51 is symmetrically arranged at the gap 3, and the PIN diodes 51 are respectively arranged in the upper U-shaped grooves Between 41 and the lower U-shaped groove 42, the two sides of the upper U-shaped groove 41 are respectively provided with a first capacitor 52, and the two sides of the lower U-shaped groove 42 are respectively provided with a second capacitor 53, and one end of the PIN diode 51 passes through the first capacitor respectively. The capacitor 52 is connected to both sides of the upper U-shaped slot 41 , and the other end of the PIN diode 51 is respectively connected to both sides of the lower U-shaped slot 42 through the second capacitor 53 .

In the coupling coefficient reconstruction component 5 , first capacitors 52 are respectively provided on both sides of the upper U-shaped slot 41 , and second capacitors 53 are respectively provided on both sides of the lower U-shaped slot 42 to prevent DC short circuit. The adjustment of the coupling coefficient is realized by controlling the on-off of the PIN diode 51 of the coupling coefficient reconstruction component 5 through the direct current bias. It can realize the digital control of the coupling coefficient and realize the flexible switching of the coupling coefficient.

As shown in Figure 1, the upper surface of the dielectric substrate 1 is the first metal layer 2, the first metal layer 2 includes two parallel half-mode comb-like line rectangles and two pairs of trapezoidal transition regions 22 and two pairs of quarter arcs The arc-shaped microstrip line 23 of the line, and the ends of the arc-shaped microstrip line 23 respectively form four ports, wherein, port 1 is an input port, port 2 is a through port, port 3 is a coupling port, and port 4 is an isolation port. Several coupling coefficient reconstruction components 5 are connected between the two half-mode comb line substrate integrated waveguides 21HMCSIW. The lower surface of the dielectric substrate 1 is the second metal layer, which is the ground of the waveguide.

As shown in Figure 2, several PIN diodes 51 of the coupling coefficient reconstruction component 5 are symmetrically placed between the two half-mode comb-like line substrate integrated waveguides 21HMCSIW, and the half-mode comb-like line base at the corresponding position of the PIN diode 51 On the open edge of the chip integrated waveguide 21HMCSIW, a U-shaped slot is opened with the PIN diode 51 as the center, which are respectively the upper U-shaped slot 41 and the lower U-shaped slot 42, and the first capacitor 52 and the second capacitor 53 are placed in the On the left and right sides of each opened U-shaped slot, each PIN diode 51 is connected to the half-mode comb-like line substrate integrated waveguide 21HMCSIW through two capacitors on the left and right sides of the upper U-shaped slot 41 and the lower U-shaped slot 42 respectively, so as to realize individual control purpose of each PIN diode 51 .

In this novel coupler with reconfigurable coupling coefficient based on HMCSIW, two half-mode comb line substrate integrated waveguides 21 are arranged in parallel on the inside. PIN diodes 51 are loaded at every quarter of the working wavelength at the gap 3 between the two half-mode comb line substrate integrated waveguides 21 . The impedances of the curved microstrip line 23 and the trapezoidal transition region 22 are both 50 ohms. The dielectric substrate 1 can be made of Rogers 5880 material with a thickness of 0.508mm. The half-mode comb-like line substrate integrated waveguide 21 of the first metal layer 2 has a length of 30mm and a width of 8.7mm, a length of 5.5mm of an open stub line, and a width of 1mm, and the distance between two adjacent stub lines is 0.6mm, the lower bottom of the trapezoidal transition zone 22 is 4.8mm, the upper bottom is 1.5mm, the distance between the open edges of the two half-mode comb-like line substrate integrated waveguides 21HMCSIW is 0.9mm, the upper U-shaped groove 41 and the lower The bottom edge slit width of U-shaped groove 42 is 0.3mm, and the left and right sides slit width of upper U-shaped groove 41 and lower U-shaped groove 42 is 0.6mm, and the side length of upper U-shaped groove 41 and lower U-shaped groove 42 is 1.4mm. mm; the distance between two adjacent PIN diodes 51 is 4.6 mm, the models of the PIN diodes 51 can be MADP-000907-14020, and the size of the first capacitor 52 and the second capacitor 53 can be 30 pF.

In this novel coupler with reconfigurable coupling coefficient based on HMCSIW, the distance and side length of the two half-mode comb-like line substrate integrated waveguides 21 of the first metal layer 2 and the rectangular patch of HMCSIW can be determined according to the design index. The loaded position and quantity of the PIN diode 51 of the coupling coefficient reconstruction component 5 can be determined according to the design index. The first capacitor 52 of the coupling coefficient reconstruction component 5 and the distance between the first capacitor 52 and the half-mode comb line substrate integrated waveguide 21HMCSIW can be determined according to the design index.

The working principle of this new coupler with reconfigurable coupling coefficient based on HMCSIW is explained as follows: the metal cylinder is replaced by a number of quarter open stub lines, and an electric wall is formed between the first metal layer 2 and the second metal layer, Confining the electromagnetic field forms a SIW resonant cavity. The half-mode comb-like line substrate integrated waveguide 21HMCSIW is half of the CSIW, and has an open edge capable of radiating an electric field outward. The open edges of the two half-mode comb-like line substrate integrated waveguides 21HMCSIW are placed opposite and parallel to achieve Electromagnetic coupling, which transfers energy across. This novel HMCSIW-based coupler with reconfigurable coupling coefficients feeds power through a quarter-arc arc-shaped microstrip line 23 and a trapezoidal transition region 22 to achieve impedance matching. The PIN diode 51 of the coupling coefficient reconstruction component 5 is center-symmetrically placed between the open edges of the inner sides of the two half-mode comb-like line substrate integrated waveguides 21HMCSIW, and the number of on or off of the PIN diode 51 is controlled Strengthen or weaken the energy transfer, and digitally control the change of the coupling coefficient.

The coupling coefficient adjustment process of this new coupler with reconfigurable coupling coefficient based on HMCSIW is to increase the conduction number of the PIN diode 51 by controlling the coupling coefficient reconstruction component 5, so as to strengthen the energy transfer and increase the coupling coefficient ; The conduction number of the PIN diode 51 of the reconstruction component 5 is reduced by controlling the coupling coefficient, so that the energy transmission is weakened, and the coupling coefficient is reduced.

This novel HMCSIW-based coupler with reconfigurable coupling coefficient can isolate the PIN diode 51 from performing DC bias by connecting the PIN diode 51 and the half-mode comb line substrate integrated waveguide 21HMCSIW on both sides with a capacitive connection. In this way, the on-off of each PIN diode 51 can be individually controlled, and flexible switching between various coupling coefficients can be realized without changing the size of the coupler.

This novel coupling coefficient reconfigurable coupler based on HMCSIW can realize the coupling coefficient It is verified by experiments that the phase is stable, and the working bandwidth, reflection coefficient and isolation performance in each state are good.

This novel coupling coefficient reconfigurable coupler based on HMCSIW can obtain good coupling performance. Compared with other types of SIW reconfigurable couplers, the invention has a relatively high isolation degree and reflection coefficient within the working bandwidth and working frequency range. All showed good performance. At the same time, the structure is simple and easy to process.

The specific example of the novel coupling coefficient reconfigurable coupler based on HMCSIW of the embodiment is verified by experimental simulation as follows:

In this novel coupling coefficient reconfigurable coupler based on HMCSIW, the coupling coefficient reconstruction component 5 adopts five PIN diodes 51, ten first capacitors 52 and ten second capacitors 53, in two half-mode comb-like PIN diodes 51 are loaded at every quarter of the operating wavelength at the gap 3 between the line-substrate integrated waveguides 21 . The five PIN diodes 51 are numbered in order from left to right, and they are A, B, C, D, E from left to right, and the five PIN diodes 51 are controlled to be turned on or off by the bias voltage. If the diode 51 is turned on, the serial number is set to 1, and if the PIN diode 51 is turned off, it is set to 0. Therefore, different combinations can be obtained, but the degree of coupling is only related to the number of conducting PIN diodes 51 , and has nothing to do with the position of the conducting PIN diodes 51 , but the conducting position will affect the phase difference.

After simulation optimization, the following six combinations are obtained, corresponding to the change of the conduction number of the five PIN diodes 51 from 0 to 5. When 0 diodes are turned on, A, B, C, D, E are 0, 0, 0, 0, 0 respectively; when 1 diode is turned on, A, B, C, D, E are 0, 0, 1, respectively. 0, 0; when 2 diodes are on, A, B, C, D, E are 0, 1, 1, 0, 0 respectively; when 3 diodes are on, A, B, C, D, E are 0, 1, 1, 1, 0; when 4 diodes are on, A, B, C, D, E are 1, 1, 1, 1, 0 respectively; when 5 diodes are on, A, B, C, D, E 1, 1, 1, 1, 1, respectively.

The simulation results of the novel coupling coefficient reconfigurable coupler based on HMCSIW in the embodiment are as shown in Fig. 3-Fig. 8, and from Fig. 3 to Fig. 8 are the S parameters and phases of the number of diode conduction from 0 to 5 Bad simulation diagram. From the results in Figure 3 to Figure 8, it can be seen that the simulation bandwidth of this new HMCSIW-based coupler with reconfigurable coupling coefficient is 10.9GHz-12.1GHz in these six states, and the reflection coefficient within this bandwidth is 10.9GHz-12.1GHz. Both S11 and isolation factor S41 are less than -15dB, the phase difference is (87.5±2.5) deg, and the coupling coefficients are 14dB, 10dB, 7.5dB, 6dB, 4.5dB, 3.5dB, respectively.

Fig. 9 is a schematic illustration of S parameters and phase differences in six cases of a specific example of a comb-line-like substrate-integrated waveguide reconfigurable coupler according to the embodiment. From the summary results in Figure 9, it can be seen that this new HMCSIW-based coupler with reconfigurable coupling coefficients exhibits good coupling performance in each state, and can not only realize digital control of coupling coefficients, but also has a stable phase and a stable structure. Simple, the operating bandwidth, reflection coefficient and isolation in each state are well behaved.

The above embodiments are only to illustrate the technical ideas of the present invention, and can not limit the protection scope of the present invention with this. All technical ideas proposed according to the present invention, any changes made on the technical solution, all fall within the protection scope of the present invention Inside.

Claims (8)

1. A novel coupler with a reconfigurable coupling coefficient based on HMCSIW comprises a medium substrate, a first metal layer and a second metal layer on the upper surface and the lower surface of the medium substrate, wherein the first metal layer comprises two symmetrically arranged metal patches, each metal patch comprises a half-module-type combline substrate integrated waveguide, a trapezoid transition area and a quarter-circle arc microstrip line, two ends of the half-module-type combline substrate integrated waveguide are respectively connected with the trapezoid transition area, the end parts of the trapezoid transition areas are respectively connected with the arc microstrip lines, the first metal layer is provided with a plurality of U-shaped groove pairs and a coupling coefficient reconfiguration component, each U-shaped groove pair comprises an upper U-shaped groove and a lower U-shaped groove, the upper U-shaped groove and the lower U-shaped groove are respectively and symmetrically arranged between the open edges of the two half-module-type combline substrate integrated waveguides, a gap is arranged between the open edges of the two half-module-type combline substrate integrated waveguides, and the coupling coefficient reconfiguration component is arranged at the gap.

2. The HMCSIW-based novel reconfigurable coupling coefficient coupler of claim 1, wherein: the coupling coefficient reconstruction assembly comprises a plurality of PIN diodes, a plurality of first capacitors and a plurality of second capacitors, the PIN diodes are arranged at the gap in a central symmetry mode, the PIN diodes are arranged between the upper U-shaped groove and the lower U-shaped groove respectively, the first capacitors are arranged on two sides of the upper U-shaped groove respectively, the second capacitors are arranged on two sides of the lower U-shaped groove respectively, one end of each PIN diode is connected with two sides of the upper U-shaped groove through the first capacitors respectively, and the other end of each PIN diode is connected with two sides of the lower U-shaped groove through the second capacitors respectively.

3. The HMCSIW-based novel reconfigurable coupling coefficient coupler of claim 2, wherein: the PIN diodes of the coupling coefficient reconstruction module are arranged at the gaps at intervals of one quarter of the working wavelength.

4. The HMCSIW-based novel coupling coefficient reconfigurable coupler of any of claims 1-3, wherein: the inner sides of the two half-mode combline substrate integrated waveguides are arranged in parallel.

5. The HMCSIW based novel reconfigurable coupling coefficient coupler of any of claims 1-3, wherein: the impedances of the arc microstrip line and the trapezoid transition region are both 50 ohms.

6. The HMCSIW-based novel coupling coefficient reconfigurable coupler of any of claims 1-3, wherein: in the two symmetrically arranged metal patches, the end parts of the arc-shaped microstrip lines of the upper metal patch form a coupling port and an isolation port respectively, and the end parts of the arc-shaped microstrip lines of the lower metal patch form an input port and a through port respectively.

7. The HMCSIW-based novel reconfigurable coupling coefficient coupler of claim 2 or 3, wherein: and the on-off of a PIN diode of the coupling coefficient reconstruction assembly is controlled through direct current bias, so that the adjustment of the coupling coefficient is realized.

8. The HMCSIW-based novel reconfigurable coupling coefficient coupler of claim 2 or 3, wherein: the coupling coefficient adjusting process of the novel HMCSIW-based coupler with the reconfigurable coupling coefficient is that the energy transfer is enhanced and the coupling coefficient is increased by controlling the conduction number of PIN diodes of the coupling coefficient reconfiguration component to be increased; the conduction number of PIN diodes of the coupling coefficient reconstruction assembly is reduced by controlling, so that energy transfer is weakened, and the coupling coefficient is reduced.

Images