CN115755527A - A kind of photoresist without photoinitiator and its preparation method and patterning method - Google Patents
A kind of photoresist without photoinitiator and its preparation method and patterning method Download PDFInfo
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000059 patterning Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 31
- 239000001257 hydrogen Substances 0.000 claims abstract description 31
- 239000002904 solvent Substances 0.000 claims abstract description 18
- 229940126062 Compound A Drugs 0.000 claims abstract description 16
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims description 41
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 31
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 27
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 12
- 229920002545 silicone oil Polymers 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- 229940093475 2-ethoxyethanol Drugs 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 7
- 238000001259 photo etching Methods 0.000 claims 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000011161 development Methods 0.000 abstract description 7
- -1 Hydroxyl compound Chemical class 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 238000010292 electrical insulation Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
本发明公开了一种无光引发剂的光刻胶及其制备方法、图案化方法，该光刻胶按质量百分比计，由4‑84wt％的含硅氢键化合物A、1‑86wt％含羟基化合物B和0‑91wt％溶剂C组成。本发明的光刻胶无需额外添加光引发剂，通过激光诱导硅氢键和羟基进行反应，形成交联网络，从而显影后得到图案，操作简单，环境友好；同时，含硅氧烷结构的光刻胶体系具有耐腐蚀、耐氧化稳定性、电绝缘和耐高温等特性。
The invention discloses a photoresist without photoinitiator and its preparation method and patterning method. The photoresist is composed of 4-84wt% silicon-hydrogen bond-containing compound A, 1-86wt% Hydroxyl compound B and 0-91wt% solvent C composition. The photoresist of the present invention does not need to add additional photoinitiators, and the laser-induced silicon-hydrogen bond and hydroxyl group react to form a crosslinked network, so that a pattern can be obtained after development, and the operation is simple and environmentally friendly; at the same time, the photoresist containing siloxane structure The resist system has the characteristics of corrosion resistance, oxidation stability, electrical insulation and high temperature resistance.
Description
技术领域technical field
本发明属于飞秒激光直写领域，尤其涉及一种无光引发剂的光刻胶及其制备方法、图案化方法。The invention belongs to the field of femtosecond laser direct writing, and in particular relates to a photoresist without a photoinitiator, a preparation method and a patterning method thereof.
背景技术Background technique
飞秒激光直写技术，通常使用飞秒激光光源在材料的内部聚焦，使得光子数密度极高的中心区域发生双光子或多光子吸收，达到材料反应的阈值，从而可以有效地控制聚合反应的范围，结合逐点扫描的移动方式，可获得超精细微纳结构。Femtosecond laser direct writing technology usually uses femtosecond laser light source to focus inside the material, so that two-photon or multi-photon absorption occurs in the central area with extremely high photon number density, reaching the threshold of material reaction, so that the polymerization reaction can be effectively controlled. range, combined with point-by-point scanning movement, can obtain ultra-fine micro-nano structures.
光刻胶是飞秒激光直写技术的重要影响因素，通常由活性单体、光引发剂和溶剂等组分构成，光子激发曝光区域的光刻胶发生光化学反应，使其在显影液中的溶解度发生明显变化，从而实现图案化。其中，光引发剂需与体系匹配，且反应后可能残余少量光引发剂，限制其应用范围。Photoresist is an important factor affecting femtosecond laser direct writing technology. It is usually composed of active monomers, photoinitiators and solvents. The solubility changes significantly, enabling patterning. Among them, the photoinitiator needs to be matched with the system, and a small amount of photoinitiator may remain after the reaction, which limits its application range.
硅氧烷具有耐腐蚀、耐氧化稳定性、电绝缘和耐高温等特性，将其引入光刻胶体系，同时可以增加与基材的附着力，可应用于微流控器件、光通信领域、微型谐振腔激光器和光互联网络等方面。Siloxane has the characteristics of corrosion resistance, oxidation resistance stability, electrical insulation and high temperature resistance. When it is introduced into the photoresist system, it can increase the adhesion to the substrate. It can be used in microfluidic devices, optical communications, Micro-resonator lasers and optical Internet, etc.
因此，需要提供一种无光引发剂的光刻胶及其图案化方法。Therefore, it is necessary to provide a photoresist without a photoinitiator and a patterning method thereof.
发明内容Contents of the invention
本发明的目的在于针对现有技术的不足，提供一种无光引发剂的光刻胶及其制备方法、图案化方法。The object of the present invention is to provide a photoresist without a photoinitiator and its preparation method and patterning method to address the deficiencies of the prior art.
本发明的目的是通过以下技术方案来实现的：本发明实施例第一方面提供了一种无光引发剂的光刻胶，按质量百分比计，包含4-84wt％的含硅氢键化合物A、1-86wt％含羟基化合物B和0-91wt％溶剂C，所述含羟基化合物B由羟基硅油B-1和下列B-2、B-3、B-4化合物中的一种或多种按任意配比混合组成：The purpose of the present invention is achieved through the following technical solutions: The first aspect of the embodiment of the present invention provides a photoresist without a photoinitiator, which contains 4-84wt% silicon-hydrogen bond-containing compound A in terms of mass percentage , 1-86wt% hydroxyl-containing compound B and 0-91wt% solvent C, the hydroxyl-containing compound B is composed of hydroxyl silicone oil B-1 and one or more of the following B-2, B-3, B-4 compounds Composition according to any proportion:
其中，B-1室温粘度为30-500cSt，m为5-50的自然数，n为5-200的自然数。Wherein, the room temperature viscosity of B-1 is 30-500cSt, m is a natural number of 5-50, and n is a natural number of 5-200.
进一步地，所述含硅氢键化合物A由支链含氢硅油A-1和端含氢硅油A-2化合物中的一种或两种按任意配比混合组成，所述含硅氢键化合物A室温粘度为20-100cSt。Further, the silicon-hydrogen bond-containing compound A is composed of one or two of the branched-chain hydrogen-containing silicone oil A-1 and terminal hydrogen-containing silicone oil A-2 compounds mixed in any proportion, and the silicon-hydrogen bond-containing compound A room temperature viscosity is 20-100cSt.
进一步地，所述溶剂C为由丙二醇甲醚醋酸酯、丙酮、甲苯、二氯甲烷、三氯甲烷、乙醇、异丙醇、2-乙氧基乙醇、3-甲氧基丙酸甲酯和二乙二醇二乙醚中的一种或多种按任意配比混合组成的溶剂。Further, the solvent C is composed of propylene glycol methyl ether acetate, acetone, toluene, dichloromethane, chloroform, ethanol, isopropanol, 2-ethoxyethanol, 3-methoxymethyl propionate and A solvent composed of one or more diethylene glycol diethyl ethers mixed in any proportion.
本发明实施例第二方面提供了一种上述无光引发剂的光刻胶的制备方法，所述含羟基化合物B包括B-2、B-3、B-4化合物中的至少一种，所述制备方法具体为：首先将含硅氢键化合物A、含羟基化合物B及溶剂C按照比例混合均匀，然后用孔径为0.22-0.45微米的滤膜进行过滤除去杂质，最后得到无光引发剂的光刻胶。The second aspect of the embodiment of the present invention provides a method for preparing the above-mentioned photoresist without photoinitiator, and the hydroxyl-containing compound B includes at least one of the compounds B-2, B-3, and B-4. The preparation method is specifically as follows: first, mix the silicon-hydrogen bond-containing compound A, the hydroxyl-containing compound B and the solvent C uniformly according to the proportion, then use a filter membrane with a pore size of 0.22-0.45 microns to filter out impurities, and finally obtain the photoinitiator-free Photoresist.
本发明实施例第三方面提供了一种无光引发剂的光刻胶的图案化方法，所述光刻胶采用上述制备方法获得，包含以下步骤：The third aspect of the embodiment of the present invention provides a photoresist-free patterning method without a photoinitiator, and the photoresist is obtained by the above-mentioned preparation method, comprising the following steps:
(1)将基于硅氢加成反应的飞秒激光光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜；(1) The femtosecond laser photoresist based on the hydrosilylation reaction is added dropwise on the spin-coated substrate, and the photoresist film is obtained by spin-coating with a homogenizer;
(2)将步骤(1)得到的光刻胶薄膜置于烘胶设备上进行烘烤；(2) placing the photoresist film obtained in step (1) on the glue-baking equipment for baking;
(3)利用飞秒激光直写装置对光刻胶进行曝光；(3) Using a femtosecond laser direct writing device to expose the photoresist;
(4)将曝光后的光刻胶浸入显影液中进行显影，得到光刻图案。(4) Dip the exposed photoresist into a developing solution for development to obtain a photoresist pattern.
本发明实施例第四方面提供了一种上述无光引发剂的光刻胶的制备方法，所述含羟基化合物B为羟基硅油B-1，所述制备方法具体为：首先将含硅氢键化合物A、含羟基化合物B按照比例混合，然后置于滚轴混匀仪上混合均匀，最后得到无光引发剂的光刻胶。The fourth aspect of the embodiment of the present invention provides a method for preparing the above-mentioned photoresist without photoinitiator. The hydroxyl-containing compound B is hydroxyl silicone oil B-1. Compound A and hydroxyl-containing compound B are mixed according to the ratio, and then placed on a roller mixer to mix evenly, and finally a photoresist without photoinitiator is obtained.
本发明实施例第五方面提供了一种无光引发剂的光刻胶的图案化方法，所述光刻胶采用上述制备方法获得，包含以下步骤：The fifth aspect of the embodiment of the present invention provides a method for patterning a photoresist without a photoinitiator, and the photoresist is obtained by the above preparation method, comprising the following steps:
(1)将无光引发剂的光刻胶滴加在基底上；(1) drop the photoresist without photoinitiator on the substrate;
(2)利用飞秒激光直写装置对光刻胶进行曝光；(2) Using a femtosecond laser direct writing device to expose the photoresist;
(3)将曝光后的光刻胶浸入显影液中进行显影，得到光刻图案。(3) Dip the exposed photoresist into a developing solution for development to obtain a photoresist pattern.
进一步地，所述飞秒激光的波长为500-780nm。Further, the wavelength of the femtosecond laser is 500-780nm.
进一步地，所述显影液由丙二醇甲醚醋酸酯、甲苯、丙酮、乙醇和异丙醇中的一种或多种按任意配比组成，显影时间为10-30min。Further, the developer is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol in any proportion, and the developing time is 10-30 minutes.
本发明的有益效果是，本发明的光刻胶无需额外添加光引发剂，利用非线性双光子吸收，通过飞秒激光诱导硅氢键和羟基进行反应，形成交联网络，从而显影后得到图案，操作简单，环境友好；通过调节体系中不同组分活性基团配比，可以调整光刻胶阈值和精度；将硅氧烷结构引入光刻胶体系中，具有耐腐蚀、耐氧化稳定性、电绝缘和耐高温等特性。The beneficial effect of the present invention is that the photoresist of the present invention does not need to add additional photoinitiators, utilizes nonlinear two-photon absorption, induces silicon-hydrogen bonds and hydroxyl groups to react through femtosecond lasers, and forms a cross-linked network, thereby obtaining a pattern after development , easy to operate and environmentally friendly; by adjusting the ratio of active groups of different components in the system, the threshold and precision of the photoresist can be adjusted; the siloxane structure is introduced into the photoresist system, which has corrosion resistance, oxidation resistance, stability, Electrical insulation and high temperature resistance and other properties.
附图说明Description of drawings
图1是本发明实施例2的光刻胶飞秒激光直写光刻胶加工所得的线条SEM图；Fig. 1 is the line SEM figure that the photoresist femtosecond laser direct writing photoresist processing of embodiment 2 of the present invention obtains;
图2是本发明实施例2的光刻胶飞秒激光直写光刻胶加工所得的SEM图。Fig. 2 is a SEM image obtained by processing the photoresist femtosecond laser direct writing photoresist according to Example 2 of the present invention.
具体实施方式Detailed ways
下面将结合实例及附图进一步阐明本发明的内容。以下实施例所描述的具体内容是说明性的而非限制性的，将有助于本领域的技术人员进一步理解本发明，但不应以任何形式限制本发明。应当指出的是，对本领域的技术人员来说，在不脱离本发明的基本构思和方法的前提下，还可以做出一些调整和改进。实施例中所涉及的药品和试剂本领域技术人员均可通过常规技术手段或商业途径购买得到。The content of the present invention will be further illustrated below in conjunction with examples and accompanying drawings. The specific content described in the following examples is illustrative rather than restrictive, and will help those skilled in the art to further understand the present invention, but should not limit the present invention in any form. It should be noted that those skilled in the art can make some adjustments and improvements without departing from the basic idea and method of the present invention. The drugs and reagents involved in the examples can be purchased by those skilled in the art through conventional technical means or commercial channels.
本发明的无光引发剂的光刻胶，按质量百分比计，包含4-84wt％的含硅氢键化合物A、1-86wt％含羟基化合物B和0-91wt％溶剂C。The photoresist without photoinitiator of the present invention comprises 4-84wt% silicon-hydrogen bond-containing compound A, 1-86wt% hydroxyl-containing compound B and 0-91wt% solvent C in terms of mass percentage.
其中，含硅氢键化合物A由支链含氢硅油A-1和端含氢硅油A-2化合物中的一种或两种按任意配比混合组成，含硅氢键化合物A室温粘度为20-100cSt。Among them, the silicon-hydrogen bond-containing compound A is composed of one or two of the branched-chain hydrogen-containing silicone oil A-1 and the terminal hydrogen-containing silicone oil A-2 compound in any proportion, and the room temperature viscosity of the silicon-hydrogen bond-containing compound A is 20 -100 cSt.
含羟基化合物B由羟基硅油B-1和下列B-2、B-3、B-4化合物中的一种或多种按任意配比混合组成：Hydroxyl-containing compound B is composed of hydroxyl silicone oil B-1 and one or more of the following compounds B-2, B-3, and B-4 mixed in any proportion:
其中，B-1室温粘度为30-500cSt，m为5-50的自然数，n为5-200的自然数。Wherein, the room temperature viscosity of B-1 is 30-500cSt, m is a natural number of 5-50, and n is a natural number of 5-200.
溶剂C为由丙二醇甲醚醋酸酯、丙酮、甲苯、二氯甲烷、三氯甲烷、乙醇、异丙醇、2-乙氧基乙醇、3-甲氧基丙酸甲酯和二乙二醇二乙醚中的一种或多种按任意配比混合组成的溶剂。Solvent C is composed of propylene glycol methyl ether acetate, acetone, toluene, dichloromethane, chloroform, ethanol, isopropanol, 2-ethoxyethanol, 3-methoxymethyl propionate and diethylene glycol di A solvent composed of one or more ethers mixed in any proportion.
值得一提的是，本发明还提供了一种无光引发剂的光刻胶的制备方法及图案化方法。It is worth mentioning that the present invention also provides a preparation method and a patterning method of a photoresist without a photoinitiator.
含羟基化合物B包括B-2、B-3、B-4化合物中的至少一种时，制备方法具体为：首先将含硅氢键化合物A、含羟基化合物B及溶剂C按照比例混合均匀，然后用孔径为0.22-0.45微米的滤膜进行过滤除去杂质，最后得到无光引发剂的光刻胶。When the hydroxyl-containing compound B includes at least one of B-2, B-3, and B-4 compounds, the preparation method is as follows: firstly, the compound A containing a silicon-hydrogen bond, the hydroxyl-containing compound B, and the solvent C are uniformly mixed in proportion, Then filter with a filter membrane with a pore size of 0.22-0.45 microns to remove impurities, and finally obtain photoresist without photoinitiator.
相对应地，根据上述方法制备得到光刻胶，其图案化包括以下步骤：Correspondingly, the photoresist is prepared according to the above method, and its patterning includes the following steps:
(1)将无光引发剂的光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜；(1) The photoresist without photoinitiator is added dropwise on the spin coating substrate, and the photoresist film is obtained by spin coating with a homogenizer;
(2)将步骤(1)得到的光刻胶薄膜置于烘胶设备上进行烘烤；(2) placing the photoresist film obtained in step (1) on the glue-baking equipment for baking;
(3)利用飞秒激光直写装置对光刻胶进行曝光；(3) Using a femtosecond laser direct writing device to expose the photoresist;
(4)将曝光后的光刻胶浸入显影液中进行显影，得到光刻图案。(4) Dip the exposed photoresist into a developing solution for development to obtain a photoresist pattern.
其中，飞秒激光的波长为500-780nm，显影液由丙二醇甲醚醋酸酯、甲苯、丙酮、乙醇和异丙醇中的一种或多种按任意配比组成，显影时间为10-30min。Wherein, the wavelength of the femtosecond laser is 500-780nm, the developer is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol in any proportion, and the developing time is 10-30min.
另外，含羟基化合物B为羟基硅油B-1时，制备方法具体为：首先将含硅氢键化合物A、含羟基化合物B按照比例混合，然后置于滚轴混匀仪上混合均匀，最后得到无光引发剂的光刻胶。In addition, when the hydroxyl group-containing compound B is hydroxyl silicone oil B-1, the specific preparation method is as follows: first, mix the silicon-hydrogen bond-containing compound A and the hydroxyl group-containing compound B according to the proportion, then put them on a roller mixer and mix them evenly, and finally get Photoresists without photoinitiators.
相对应地，根据上述方法制备得到光刻胶，其图案化包括以下步骤：Correspondingly, the photoresist is prepared according to the above method, and its patterning includes the following steps:
(1)将无光引发剂的光刻胶滴加在基底上；(1) drop the photoresist without photoinitiator on the substrate;
(2)利用飞秒激光直写装置对光刻胶进行曝光；(2) Using a femtosecond laser direct writing device to expose the photoresist;
(3)将曝光后的光刻胶浸入显影液中进行显影，得到光刻图案。(3) Dip the exposed photoresist into a developing solution for development to obtain a photoresist pattern.
其中，飞秒激光的波长为500-780nm，显影液由丙二醇甲醚醋酸酯、甲苯、丙酮、乙醇和异丙醇中的一种或多种按任意配比组成，显影时间为10-30min。Wherein, the wavelength of the femtosecond laser is 500-780nm, the developer is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol in any proportion, and the developing time is 10-30min.
下面根据实施例详细描述本发明中无光引发剂的光刻胶及其制备方法、图案化方法，本发明的目的和效果将变得更加明显。The photoresist without photoinitiator in the present invention and its preparation method and patterning method will be described in detail below according to the examples, and the purpose and effect of the present invention will become more obvious.
实施例1Example 1
称取1g 100cSt含硅氢键化合物A-1和6g 450cSt含羟基化合物B-1，置于滚轴混匀仪上混合均匀，得到无光引发剂的光刻胶。Weigh 1g of 100cSt silicon-hydrogen bond-containing compound A-1 and 6g of 450cSt hydroxyl-containing compound B-1, place them on a roller mixer and mix them uniformly to obtain a photoresist without photoinitiator.
将无光引发剂的光刻胶滴加在基底上，利用波长为532nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入甲苯显影液中浸泡20min，然后转移到异丙醇中浸泡5min，静置干燥，得到光刻图案。The photoresist without photoinitiator is dropped on the substrate, and the photoresist is exposed by a femtosecond laser direct writing device with a wavelength of 532 nm. The exposed photoresist was soaked in a toluene developer solution for 20 minutes, then transferred to isopropanol and soaked for 5 minutes, and left to dry to obtain a photoresist pattern.
实施例2Example 2
称取1g 20cSt含硅氢键化合物A-1和0.9g含羟基化合物B-2
将光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜后置于烘胶设备上进行烘烤。利用波长为525nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入丙二醇甲醚醋酸酯显影液中浸泡8min，然后转移到异丙醇中浸泡2min，静置干燥，得到光刻图案。对显影后的光刻图案进行电镜扫描，得到如图1和2电镜图。The photoresist is added dropwise on the spin-coated substrate, and the photoresist film is obtained by spin-coating with a coater, and then placed on the glue-baking equipment for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 525 nm. The exposed photoresist was soaked in propylene glycol methyl ether acetate developer solution for 8 minutes, then transferred to isopropanol and soaked for 2 minutes, and left to dry to obtain a photoresist pattern. Electron microscope scanning was performed on the photolithographic pattern after development, and the electron micrographs shown in Figures 1 and 2 were obtained.
实施例3Example 3
称取1g 80cSt含硅氢键化合物A-1和2.5g含羟基化合物B-3(单体摩尔分数＝50％，Mn＝3000-5000)，溶于14g丙酮溶剂中混合均匀，用滤膜进行过滤除去杂质后得到无光引发剂的光刻胶。Weigh 1g of 80cSt silicon-hydrogen bond-containing compound A-1 and 2.5g of hydroxyl-containing compound B-3 (monomer mole fraction = 50%, Mn = 3000-5000), dissolve in 14g of acetone solvent and mix evenly, and carry out the test with a filter membrane After removing impurities by filtration, a photoresist without photoinitiator is obtained.
将光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜后置于烘胶设备上进行烘烤。利用波长为700nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入丙酮显影液中浸泡10min，然后转移到乙醇中浸泡2min，静置干燥，得到光刻图案。The photoresist is added dropwise on the spin-coated substrate, and the photoresist film is obtained by spin-coating with a coater, and then placed on the glue-baking equipment for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 700 nm. The exposed photoresist was soaked in an acetone developer solution for 10 minutes, then transferred to ethanol for 2 minutes, and left to dry to obtain a photoresist pattern.
实施例4Example 4
称取1g 100cSt含硅氢键化合物A-1和1.5g含羟基化合物B-4
将光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜后置于烘胶设备上进行烘烤。利用波长为780nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入甲苯显影液中浸泡8min，然后转移到异丙醇中浸泡3min，静置干燥，得到光刻图案。The photoresist is added dropwise on the spin-coated substrate, and the photoresist film is obtained by spin-coating with a coater, and then placed on the glue-baking equipment for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 780 nm. The exposed photoresist was soaked in toluene developer solution for 8 minutes, then transferred to isopropanol and soaked for 3 minutes, and left to dry to obtain a photoresist pattern.
实施例5Example 5
称取2g 30cSt含硅氢键化合物A-2和0.3g含羟基化合物B-2
将光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜后置于烘胶设备上进行烘烤。利用波长为500nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入甲苯显影液中浸泡25min，然后转移到异丙醇中浸泡5min，静置干燥，得到光刻图案。The photoresist is added dropwise on the spin-coated substrate, and the photoresist film is obtained by spin-coating with a coater, and then placed on the glue-baking equipment for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 500 nm. The exposed photoresist was soaked in a toluene developer solution for 25 minutes, then transferred to isopropanol and soaked for 5 minutes, and left to dry to obtain a photoresist pattern.
实施例6Example 6
称取0.3g 20cSt含硅氢键化合物A-1、5g 20cSt含硅氢键化合物A-2和1.5g 25cSt含不饱和双键化合物B-1，置于滚轴混匀仪上混合均匀，得到无光引发剂的光刻胶。Weigh 0.3g 20cSt silicon-hydrogen bond-containing compound A-1, 5g 20cSt silicon-hydrogen bond-containing compound A-2 and 1.5g 25cSt unsaturated double bond-containing compound B-1, place on a roller mixer and mix evenly to obtain Photoresists without photoinitiators.
将无光引发剂的光刻胶滴加在基底上，利用波长为525nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入丙二醇甲醚醋酸酯显影液中浸泡20min，然后转移到异丙醇中浸泡3min，静置干燥，得到光刻图案。The photoresist without photoinitiator is dropped on the substrate, and the photoresist is exposed by a femtosecond laser direct writing device with a wavelength of 525 nm. The exposed photoresist was soaked in propylene glycol methyl ether acetate developer solution for 20 minutes, then transferred to isopropanol and soaked for 3 minutes, and left to dry to obtain a photoresist pattern.
实施例7Example 7
称取1g 100cSt含硅氢键化合物A-2和0.3g含羟基化合物B-4
将光刻胶滴加在旋涂衬底上，利用匀胶仪旋涂得到光刻胶薄膜后置于烘胶设备上进行烘烤。利用波长为780nm的飞秒激光直写装置对光刻胶进行曝光。将曝光后的光刻胶浸入丙二醇甲醚醋酸酯显影液中浸泡13min，然后转移到乙醇中浸泡2min，静置干燥，得到光刻图案。The photoresist is added dropwise on the spin-coated substrate, and the photoresist film is obtained by spin-coating with a coater, and then placed on the glue-baking equipment for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 780 nm. The exposed photoresist was soaked in propylene glycol methyl ether acetate developer solution for 13 minutes, then transferred to ethanol for 2 minutes, and left to dry to obtain a photolithography pattern.
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定，对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动，这里无法对所有的实施方式予以穷举，凡是属于本发明的技术方案所引伸出的显而易见的变化或变动仍处于本发明的保护范围之列。Apparently, the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those of ordinary skill in the art can also make It is impossible to exhaustively list all the implementation modes here, and any obvious changes or changes derived from the technical solutions of the present invention are still within the scope of protection of the present invention.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202742A (en) * | 1979-04-30 | 1980-05-13 | Westinghouse Electric Corp. | Photopolymerization of ethylenically unsaturated monomers |
| US20030225180A1 (en) * | 2002-03-07 | 2003-12-04 | Kai-Uwe Gaudl | Photocurable composition, process for producing photocurable resin, and crosslinked product |
| JP2004143202A (en) * | 2002-10-22 | 2004-05-20 | Toyo Ink Mfg Co Ltd | Active energy ray-curable composition, method for forming cured film using the same, cured product thereof, and antireflective body |
| CN104656373A (en) * | 2015-01-08 | 2015-05-27 | 苏州瑞红电子化学品有限公司 | Photosensitizer-free photoresist composition used in glass passivated rectifier chip (GPRC) technology |
| US20190225806A1 (en) * | 2016-09-20 | 2019-07-25 | Shin-Etsu Chemical Co., Ltd. | Transparent liquid silicone rubber composition |
| CN112250869A (en) * | 2020-10-23 | 2021-01-22 | 无锡博加电子新材料有限公司 | Single-component hyperbranched polymer UV (ultraviolet) matte resin and preparation method thereof |
| CN114249862A (en) * | 2021-12-30 | 2022-03-29 | 宁波东旭成新材料科技有限公司 | Initiator-free quantum dot ultraviolet curing resin |
-
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- 2022-11-18 CN CN202211447300.5A patent/CN115755527B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202742A (en) * | 1979-04-30 | 1980-05-13 | Westinghouse Electric Corp. | Photopolymerization of ethylenically unsaturated monomers |
| US20030225180A1 (en) * | 2002-03-07 | 2003-12-04 | Kai-Uwe Gaudl | Photocurable composition, process for producing photocurable resin, and crosslinked product |
| JP2004143202A (en) * | 2002-10-22 | 2004-05-20 | Toyo Ink Mfg Co Ltd | Active energy ray-curable composition, method for forming cured film using the same, cured product thereof, and antireflective body |
| CN104656373A (en) * | 2015-01-08 | 2015-05-27 | 苏州瑞红电子化学品有限公司 | Photosensitizer-free photoresist composition used in glass passivated rectifier chip (GPRC) technology |
| US20190225806A1 (en) * | 2016-09-20 | 2019-07-25 | Shin-Etsu Chemical Co., Ltd. | Transparent liquid silicone rubber composition |
| CN112250869A (en) * | 2020-10-23 | 2021-01-22 | 无锡博加电子新材料有限公司 | Single-component hyperbranched polymer UV (ultraviolet) matte resin and preparation method thereof |
| CN114249862A (en) * | 2021-12-30 | 2022-03-29 | 宁波东旭成新材料科技有限公司 | Initiator-free quantum dot ultraviolet curing resin |
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