CN115747776A - Nano semiconductor electrothermal film forming process, solution formula and preparation method - Google Patents
Nano semiconductor electrothermal film forming process, solution formula and preparation method Download PDFInfo
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- CN115747776A CN115747776A CN202211555641.4A CN202211555641A CN115747776A CN 115747776 A CN115747776 A CN 115747776A CN 202211555641 A CN202211555641 A CN 202211555641A CN 115747776 A CN115747776 A CN 115747776A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000009472 formulation Methods 0.000 title claims description 3
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000002243 precursor Substances 0.000 claims description 26
- 238000005485 electric heating Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 238000003756 stirring Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 15
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 claims description 10
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims description 10
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 10
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 235000005074 zinc chloride Nutrition 0.000 claims description 5
- 239000011592 zinc chloride Substances 0.000 claims description 5
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 238000002203 pretreatment Methods 0.000 claims 1
- 238000000889 atomisation Methods 0.000 abstract description 6
- 238000000197 pyrolysis Methods 0.000 abstract description 4
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 238000009827 uniform distribution Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 72
- 239000000243 solution Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910021617 Indium monochloride Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- AIJULSRZWUXGPQ-UHFFFAOYSA-N Methylglyoxal Chemical compound CC(=O)C=O AIJULSRZWUXGPQ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
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- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a nano semiconductor electrothermal film forming process, a solution formula and a preparation method. The solution formula of the invention uses chloride raw materials, so that the consumption of HCl is greatly reduced, the electrothermal film is environment-friendly when prepared by the raw material proportion, and the environmental pollution can be effectively reduced. Meanwhile, the ultrasonic atomization pyrolysis film forming process is provided, and the prepared electrothermal film has the advantages of fine microscopic particles, uniform distribution, consistent particle size, uniform macroscopic film structure, good stability, high temperature rise speed, simple structure, low cost and simple and reliable use.
Description
Technical Field
The invention relates to the technical field of semiconductor films, in particular to a nano semiconductor electrothermal film forming process, a solution formula and a preparation method.
Background
Compared with the traditional heating wire and heating plate, the nano semiconductor electrothermal film has many advantages, such as: high heating efficiency, large contact surface junction, long service life, fast temperature rise, capability of absorbing various rays and electromagnetic waves, no environmental pollution and the like. The deicing agent has wide application field, and can be applied to deicing of airplane wings, airports, electric wires and automobile windshields; defrosting the refrigerated cabinet; heating the daily water; an automobile exhaust treatment heating device; an electric heating glove; heating a valve; heating of medical appliances, and the like. On one hand, the heating efficiency is high, resources are saved, on the other hand, the voltage application range is wide, the electric heating element can be used from low voltage 6V to high voltage 600V, and meanwhile, the characteristics of the thin film can be generated on the surface of a complex heating device to form various electric heating elements.
The research work of domestic semiconductor electrothermal film, the first main stannic oxide film that goes on, but pure stannic oxide is intrinsic semiconductor material, and the film performance of preparation is unstable, mainly hinders that temperature coefficient is big, the programming rate is slow and unstable.
Disclosure of Invention
In order to solve the defects of the prior art and achieve the purpose of improving the stability and the temperature resistance of the semiconductor electrothermal film, the invention adopts the following technical scheme:
an environment protection type nano-class semiconductor electrothermal film solution is prepared from chloride as solute (90-98 portions of SnCl) 4 0.15 to 0.285 part of zinc chloride ZnCl 2 0.15-0.25 part of aluminum chloride AlCl 3 0.1-0.25 parts of boron chloride BCl 3 0.1-0.25 part of antimony chloride SbCl 3 0.1 to 0.25 portion of bismuth chloride BiCl 3 ，0.02-0.055 parts of copper chloride CuCl 2 0.015-0.08 parts of FeCl 3 (ii) a The solvent comprises one or a combination of HCl, deionized water, ethanol and propanol.
Further, the solute also comprises 0.1-0.20 part of indium chloride InCl 3 And the electrical property of the electric heating film material is effectively improved.
A preparation method of an environment-friendly nano semiconductor electrothermal film precursor solution comprises the following steps:
s101, weighing SnCl according to the proportion 4 Adding the solution into a solvent, and obtaining a solution A after the solution is completely dissolved;
step S102, aluminum chloride AlCl with corresponding proportion 3 ZnCl, zinc chloride 2 Copper chloride (CuCl) 2 Iron chloride FeCl 3 Sequentially adding the raw materials into the solution A, continuously stirring the raw materials in the adding process, adding a solvent to promote the raw materials to be dissolved, and stirring the raw materials to be dissolved to obtain a solution B;
step S103, respectively mixing bismuth chloride BiCl with corresponding proportion 3 And antimony chloride SbCl 3 Dissolving in solvent, and sequentially dissolving bismuth chloride BiCl 3 And antimony chloride SbCl 3 Adding the mixture into the solution B, and stirring and mixing to obtain a solution C;
step S104, taking part of the solution C, and adding boron chloride BCl in a corresponding proportion 3 Adding part of the solution C and heating and stirring until boron chloride BCl 3 And (4) completely dissolving and cooling, adding into the residual solution C, and stirring and uniformly mixing to obtain the electrothermal film precursor solution.
Further, in the solution B obtained after the step S102, indium chloride InCl is added with stirring 3 The resistivity (rho) and the required sheet resistance (R) of the electrothermal film material can be effectively regulated and controlled, and the electrothermal film material is more stable at high temperature.
An environment-friendly nano semiconductor electrothermal film forming process comprises the following steps:
step S201, under the heating condition, high-purity silicon dioxide particles are used for carrying out spraying pretreatment on a matrix to form a uniform and flat silicon dioxide film, and the purpose is to cover the surface defects of the matrix and the precipitation of impurities of alkali metal and alkaline earth metal elements in the matrix so as to obtain the surface of the matrix layer with high quality;
step S202, atomizing the prepared electrothermal film precursor solution into fine micron-sized solution particles with uniform particle size distribution by ultrasonic waves, and then taking compressed air as a carrier to match with a nozzle to uniformly spray the atomized electrothermal film precursor solution particles on a heated substrate;
and S203, contacting the electric heating film precursor solution particles with the pretreated substrate, and forming an electric heating film layer on the surface of the silicon dioxide film layer in a chemical bond bonding mode through a thermal decomposition reaction.
Further, the heating temperature of the pretreatment in step S201 is above 1000 ℃.
Further, the high purity silica particles in step S201 are in the micro-scale and/or nano-scale.
Further, the fineness of the electrothermal film precursor solution particles in the step S202 is 3 μm.
Further, the temperature of the substrate in the step S202 is 635-720 ℃.
Further, the temperature field condition of the thermal decomposition reaction in step S203 is 700 to 800 ℃. The thickness of the formed electrothermal film is 300-600nm, the grain diameter of the electrothermal film is below 100nm, the distribution is uniform, the grain diameter is consistent, and the whole generated film layer is flat and compact.
The invention has the advantages and beneficial effects that:
the environmental-friendly nano semiconductor electrothermal film precursor solution adopted by the invention has good formula modification, and the prepared electrothermal film has strong stability and excellent performance. The used solute raw materials all adopt chlorides, so that the use of hydrochloric acid is greatly reduced, and the formula is an environment-friendly electric heating film precursor solution formula. Meanwhile, by regulating and controlling the formula and the proportion of the electrothermal film precursor solution, the electrothermal films with different resistance parameters can be obtained, the design and production of electrothermal elements with various power specifications are facilitated, the electrothermal conversion efficiency is improved, and the energy is saved.
The ultrasonic atomization pyrolysis spraying process used by the invention firstly pretreats the surface of a substrate to attach a uniform and flat silicon dioxide film layer, then sprays electric heating film solution particles subjected to ultrasonic atomization by taking compressed air as a carrier, when the electric heating film solution particles contact the surface of the heated substrate, thermal decomposition reaction is instantly carried out to form an electric heating film layer, and the electric heating film layer is uniformly generated on the silicon dioxide film layer in a chemical bond bonding mode, so that the electric heating film prepared by the invention has good and stable quality, the film layer is transparent and thin, and the thickness is as follows: 300-600nm;
the grain diameter of the grains in the microstructure of the electric heating film prepared by the invention is extremely fine and is below 100nm, the grains are uniformly distributed and consistent, the grains are closely arranged, and the formed film layer is integrally flat and compact, so that the electric heating film has good stability and excellent quality, the electric heating conversion efficiency is above 98 percent, the reactive loss is low, and the service life is long: 10000 hours or more.
Drawings
Fig. 1 is a flow chart of a method for preparing a nano semiconductor electrothermal film solution in the embodiment of the invention.
FIG. 2 is a flow chart of a process for forming a nano-semiconductor electrothermal film according to an embodiment of the present invention.
Fig. 3 is an SEM image of the electric heating film at 5000 times resolution in the example of the present invention.
Fig. 4 is an SEM image of the electric heating film at 50000 times resolution in the example of the present invention.
Detailed Description
The following describes in detail embodiments of the present invention with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are given by way of illustration and explanation only, not limitation.
An environment-friendly nano semiconductor electrothermal film precursor solution formula comprises the following materials: 90-98 parts of SnCl 4 0.15-0.285 parts of ZnCl 2 0.15-0.25 part of aluminum chloride AlCl 3 0.1-0.25 parts of boron chloride BCl 3 0.1-0.25 part of antimony chloride SbCl 3 0.1-0.25 part of bismuth chloride BiCl 3 0.1-0.20 parts of indium chloride InCl 3 0.02-0.055 part of copper chloride CuCl 2 0.015-0.08 parts of FeCl 3 The solvent is as follows: HCl, deionized water, ethanol and propanolOne or more of alcohol.
In the embodiment of the invention, the solute and the solvent of the electric heating film precursor solution are mixed according to the ratio of 1:50, 960g of tin chloride, 2.85g of zinc chloride, 0.3g of aluminum chloride, 0.2g of copper chloride, 0.35g of ferric chloride, 2g of bismuth chloride, 2g of boron chloride and 12g of antimony chloride; the solvent is deionized water and ethanol.
As shown in fig. 1, a method for preparing an environment-friendly nano semiconductor electrothermal film precursor solution comprises the following steps:
s101, weighing SnCl in proportion 4 Adding the mixed solution into a solvent, and obtaining a solution A after the mixed solution is completely dissolved;
step S102, aluminum chloride AlCl is added 3 ZnCl, zinc chloride 2 Copper chloride CuCl 2 FeCl, iron chloride 3 Sequentially adding the raw materials into the solution A, continuously stirring the raw materials in the adding process, adding a solvent to promote the raw materials to be dissolved, and stirring the raw materials to be dissolved to obtain a solution B;
step S103, respectively adding bismuth chloride BiCl 3 And antimony chloride SbCl 3 Dissolving in solvent, and sequentially dissolving bismuth chloride BiCl 3 And antimony chloride SbCl 3 Adding the mixture into the solution B, and stirring and mixing to obtain a solution C;
step S104, taking a proper amount of solution C, and adding boron chloride BCl 3 Adding the solution C and heating and stirring until boron chloride BCl 3 And (4) after completely dissolving and cooling, pouring the solution into the residual solution C, and stirring and uniformly mixing to obtain the electrothermal film precursor solution.
As shown in FIG. 2, an environment-friendly nano semiconductor electrothermal film forming process comprises the following steps:
step S201, before spraying the electrothermal film precursor solution, firstly, spraying pretreatment is carried out on the surface of a workpiece by using superfine (micron-sized or nano-sized) high-purity silicon dioxide under a high-temperature heating condition to form a uniform and flat silicon dioxide film, and the purpose is to cover the surface defects of a substrate and the precipitation of alkali metal and alkaline earth metal elements as impurities in the substrate so as to obtain the surface of the high-quality substrate; the heating temperature of the pretreatment is above 1000 ℃.
S202, atomizing the prepared electrothermal film precursor solution into fine nanoscale crystal particles with uniform particle size distribution through ultrasonic waves, and then uniformly spraying the atomized electrothermal film precursor solution particles on a heated substrate by using compressed air as a carrier and matching with a nozzle, wherein the atomization fineness of the electrothermal film precursor solution particles is 3 microns, and the temperature of the substrate is 635-720 ℃; in the embodiment of the invention, the substrate is a quartz substrate, and the substrate can also be a plane, a curved surface and the like of a microcrystalline glass and a ceramic substrate.
S203, enabling the sprayed electrothermal film solution particles to be in contact with a base body, carrying out thermal decomposition reaction under the heating condition of high temperature (700-800 ℃), and forming an electrothermal film layer on the surface of the silicon dioxide film layer in a chemical bond bonding mode, wherein the thickness of the formed electrothermal film is 300-600nm; in the embodiment of the invention, the thickness of the film layer of the electrothermal film is about 500 nm.
In the embodiment of the invention, the electric heating membrane electrode is prepared by adopting the conductive silver paste, one end of the electrode coating direction is 10-30mm longer than the longitudinal length of the electric heating membrane to form an electrode leading-out end, the other end of the electrode coating direction is flush with the electric heating membrane, the width of the electrode coating is 8-12mm, and the thickness of the electrode coating is 0.1mm.
As shown in figures 3 and 4, by using the electrothermal film precursor solution formula and the ultrasonic atomization spraying pyrolysis film-forming process provided by the invention, an electrothermal film layer structure which is fine in particles, uniform in distribution, consistent in particle size and dense in arrangement can be prepared on the inner wall of a quartz tube substrate. As can be seen from figure 4, the electrothermal film prepared by the invention has the particle size less than 100nm, consistent particle size, uniform distribution, compact arrangement among particles, no defects such as holes and the like; as can be seen from figure 3, the electrothermal film prepared by the invention is very flat in whole, compact and ordered in film, excellent in film quality, and excellent in performance while reflecting the excellent quality of the electrothermal film prepared by the invention to a great extent.
By calculation, the thermal efficiency of the electric heating film in the water boiler is more than or equal to 98 percent and is higher than the grade 1 grade of a 6.3.5 continuous water boiler in QB/T4270-2011 commercial electric heating water boiler standard.
The electrothermal film prepared by adopting the formula of the precursor solution of the environment-friendly nano semiconductor electrothermal film and the ultrasonic atomization pyrolysis spraying process has the advantages of strong stability, compact and uniform film layer, good safety, excellent electrothermal performance, high electrothermal conversion rate of more than 98 percent and low reactive loss.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. An environment protection type nano-class electrothermal semiconductor film solution is prepared from chloride as solute and solvent through dissolving the said solute in SnCl 90-98 4 0.15-0.285 parts of ZnCl 2 0.15-0.25 part of aluminum chloride AlCl 3 0.1-0.25 parts of boron chloride BCl 3 0.1-0.25 part of antimony chloride SbCl 3 0.1-0.25 part of bismuth chloride BiCl 3 0.02-0.055 parts of copper chloride CuCl 2 0.015-0.08 parts of FeCl 3 (ii) a The solvent comprises one or more of HCl, deionized water, ethanol and propanol.
2. The solution formulation of claim 1, wherein said solute further comprises 0.1-0.20 parts indium chloride, inCl 3 。
3. The preparation method of the environment-friendly nano semiconductor electrothermal film precursor solution is characterized by comprising the following steps of:
step S101, weighing tin chloride SnCl according to the proportion of claim 1 4 Adding the solution into a solvent, and obtaining a solution A after the solution is completely dissolved;
step S102, aluminum chloride AlCl with corresponding proportion 3 ZnCl, zinc chloride 2 Copper chloride (CuCl) 2 Chlorine, chlorineIron-containing FeCl 3 Sequentially adding the raw materials into the solution A, continuously stirring the raw materials in the adding process, adding a solvent to promote the raw materials to be dissolved, and stirring the raw materials to be dissolved to obtain a solution B;
step S103, respectively mixing bismuth chloride BiCl with corresponding proportion 3 And antimony chloride SbCl 3 Dissolving in solvent, and sequentially dissolving bismuth chloride BiCl 3 And antimony chloride SbCl 3 Adding the solution B into the solution B, and stirring and mixing to obtain a solution C;
step S104, taking part of the solution C, and adding boron chloride BCl in a corresponding proportion 3 Adding part of the solution C and heating and stirring until boron chloride BCl 3 And (4) completely dissolving and cooling, adding into the residual solution C, and stirring and uniformly mixing to obtain the electrothermal film precursor solution.
4. The method for preparing the environment-friendly nano semiconductor electrothermal film precursor solution as claimed in claim 1, wherein indium chloride (InCl) is added into the solution B obtained after the step S102 by stirring 3 。
5. An environment-friendly nano semiconductor electrothermal film forming process is characterized by comprising the following steps:
step S201, under the heating condition, high-purity silicon dioxide particles are used for carrying out spraying pretreatment on a substrate to form a silicon dioxide film;
step S202, atomizing the electrothermal film precursor solution prepared by the preparation method according to one of claims 3 or 4 into micron-sized solution particles by ultrasonic waves, and uniformly spraying the atomized electrothermal film precursor solution particles on a heated substrate;
and S203, contacting the electric heating film precursor solution particles with the pretreated substrate, and forming an electric heating film layer on the surface of the silicon dioxide film layer through thermal decomposition reaction.
6. The process of claim 5, wherein the pre-treatment heating temperature in step S201 is above 1000 ℃.
7. The process of claim 5, wherein the silica particles in step S201 are in micro and/or nano size.
8. The process of claim 5, wherein the fineness of the solution particles of the electrothermal film precursor in step S202 is 3 μm.
9. The process of claim 5, wherein the substrate temperature in step S202 is 635-720 ℃.
10. The process of claim 5, wherein the thermal decomposition reaction in step S203 is carried out at a temperature of 700-800 ℃.
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