CN115747747A - Method for testing thickness of evaporation coating film - Google Patents
Method for testing thickness of evaporation coating film Download PDFInfo
- Publication number
- CN115747747A CN115747747A CN202211289147.8A CN202211289147A CN115747747A CN 115747747 A CN115747747 A CN 115747747A CN 202211289147 A CN202211289147 A CN 202211289147A CN 115747747 A CN115747747 A CN 115747747A
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- CN
- China
- Prior art keywords
- inches
- test pieces
- wafer
- test
- thickness
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- 238000012360 testing method Methods 0.000 title claims abstract description 54
- 230000008020 evaporation Effects 0.000 title claims abstract description 37
- 238000001704 evaporation Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000576 coating method Methods 0.000 title claims abstract description 21
- 239000011248 coating agent Substances 0.000 title abstract description 18
- 238000001465 metallisation Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims description 20
- 230000002159 abnormal effect Effects 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000005856 abnormality Effects 0.000 claims description 3
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000000429 assembly Methods 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000012795 verification Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000009864 tensile test Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a method for testing the thickness of an evaporation coating film, wherein a wafer and a test piece are placed in corresponding placing grooves of a planetary disk, a wafer back metallization evaporation coating process is carried out, after evaporation coating is finished, a film thickness test is carried out on two inches of test pieces, whether the thickness of a coating meets requirements is confirmed, a damage test and a tensile test are carried out, and whether the appearance of the coating peels off or particles are generated is confirmed.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a method for testing thickness of an evaporation coating.
Background
Nowadays, semiconductor technology and technology are advanced, and the trend of future integrated circuits is to grind and thin a wafer to achieve a subsequent packaging process, so that a plurality of thinned chips can be stacked and packaged, and the wafer thinning can make the chips have the advantages of low power and low on resistance, thereby not only effectively prolonging the product life, but also effectively improving the use efficiency.
The BSM uses electron beam evaporation or metal sputtering process to plate a layer of metal and base material on the back of the wafer for bonding, so as to achieve better heat dissipation and electric conduction effects. After the metallization evaporation process on the back of the wafer, the coating may have poor adhesion due to various abnormal reasons during evaporation, and may peel off or become particles, which may result in an increase in the abnormal rate of the product during subsequent packaging.
Therefore, a test flow needs to be established after the metallization evaporation process of the back surface of the wafer, and the bonding between the plating layer and the wafer is confirmed to be abnormal, so that the abnormal rate of the product is reduced.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method for testing the thickness of an evaporation coating film, which is used for solving the existing problems.
In order to solve the technical problems, the invention adopts the following technical scheme:
a method for testing the thickness of an evaporated film comprises the following steps:
s1, a set of planetary disk assemblies of an evaporation cavity body is provided with three planetary disks, and one of the planetary disks is provided with a two-inch test piece placing groove;
s2, arranging a wafer placing groove on the planet disk, placing the wafer, and placing two inch test pieces into the placing groove;
s3, carrying out a wafer back metallization evaporation process;
s4, performing a film thickness test on the two inches of test pieces, determining whether the thickness of the plating layer meets the requirement, and determining whether the appearance of the plating layer peels off or particles are generated, wherein the steps are as follows: a1, a damage test, namely drawing a Chinese character jing on two inches of test pieces by using an art designing knife, confirming whether a plating layer of the two inches of test pieces has a peeling phenomenon under the condition of external force damage, and ensuring whether the plating layer of the batch of products has abnormality during an evaporation process; and A2, testing tension, namely welding a copper wire on the plating layer on the back surface of the wafer, and performing pulling action by using a tension meter, and determining whether the plating layer is easy to peel off under the tension of 2 kilograms.
And S5, if the abnormity is confirmed, the batch of products need to be subjected to engineering analysis, and meanwhile, the evaporation equipment is stopped to suspend production so as to prevent more abnormal products from occurring.
Furthermore, the two inches of test pieces take the film thickness test as the verification basis of the evaporation process after each evaporation process.
Furthermore, the two inches of test pieces can be recycled, the surface coatings of the two inches of test pieces are cleaned by wet etching by using a chemical tank, and the two inches of test pieces are dried and placed in an oven for standby.
Furthermore, the planet disk is umbrella-shaped.
Compared with the prior art, the invention has the following beneficial effects:
the invention perfects the metallization evaporation process of the back surface of the wafer, can detect the thickness of the coating film of the wafer after the evaporation process, and can detect whether the appearance of the coating film of the wafer is peeled off or particles are generated, thereby reducing the abnormal rate of products, ensuring the smooth proceeding of subsequent processes, reducing the rejection rate of finished products, greatly improving the production efficiency and reducing the production cost.
Detailed Description
In order that those skilled in the art may better understand the present invention, the following embodiments are provided to further illustrate the present invention.
The embodiment is as follows:
the invention discloses a method for testing the thickness of an evaporation coating, which comprises the following steps:
s1, a group of planetary disk assemblies of an evaporation cavity is provided with three planetary disks, the planetary disks are umbrella-shaped, and one of the planetary disks is provided with a two-inch test piece placing groove;
s2, arranging a wafer placing groove on the planet disk, placing the wafer, and placing two inch test pieces into the placing groove;
s3, carrying out a wafer back metallization evaporation process;
s4, performing a film thickness test on the two inches of test pieces, determining whether the thickness of the plating layer meets the requirement, and determining whether the appearance of the plating layer peels off or particles are generated, wherein the steps are as follows: a1, performing a damage test, namely drawing a Chinese character jing on the two inches of test pieces by using an art designing knife, confirming whether the plating layers of the two inches of test pieces are peeled off under the condition of external force damage, and ensuring whether the plating layers of the batch of products are abnormal during an evaporation process; and A2, testing tension, namely welding a copper wire on the coating on the back surface of the wafer by using a tension meter to pull, and determining whether the coating is easy to peel off under the tension of 2 kilograms.
And S5, if the abnormity is confirmed, the batch of products need to be subjected to engineering analysis, and meanwhile, the evaporation equipment is stopped to suspend production so as to prevent more abnormal products from occurring.
The two inches of test pieces take the film thickness test as the verification basis of the evaporation process after each evaporation process.
The two inches of test pieces can be recycled, the surface coating of the two inches of test pieces is cleaned by wet etching by using a chemical tank, and the two inches of test pieces are dried and placed in an oven for standby.
When the wafer back metallization evaporation process is performed, three or four layers of metal materials are required to be plated on the wafer back: titanium, nickel, silver and tin are difficult to adhere to the plating layer due to the abnormality in the vapor deposition process, so that the plating layer is peeled off or particles are generated, and the subsequent packaging and the abnormal rate increase of products are influenced.
Vacuum value: the vacuum value is set to be less than 2.1 × 10-6Pa, the DryPump air extraction efficiency is abnormal, and the bonding degree of the coating and the wafer is reduced due to the abnormal vacuum value of the cavity during evaporation.
Target material: titanium, nickel, silver and tin have poor quality purity and too many impurities, and mixed gold is formed due to wrong addition of a sub-ingot during operation, so that poor adhesion of a plating layer can be caused.
Electron beam: the resistance of the electron beam assembly is too high, the output power is reduced during evaporation, and the target material is heated unevenly or incompletely during evaporation, so that the coating adhesion is abnormal
Planet carrier assembly: the rotating speed of the star frame is set to be 5Rpm, the planet carrier assembly abnormally moves, the rotating speed is too high or too low, the planet carrier rotates unsmoothly, and the target material is not uniformly attached to the back of the wafer in the evaporation process
Temperature of the cavity: the temperature of the cavity is set to 120 ℃, the temperature of the cavity is abnormal, and the coating adhesion effect is poor due to the abnormal temperature of the evaporation environment.
The foregoing are merely exemplary embodiments of the present invention, and no attempt is made to show structural details of the invention in more detail than is necessary for the fundamental understanding of the art, the description taken with the drawings making apparent to those skilled in the art how the several forms of the invention may be embodied in practice with the teachings of the invention. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several variations and modifications can be made, which should also be considered as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the utility of the patent.
Claims (4)
1. A method for testing the thickness of an evaporated film is characterized by comprising the following steps:
s1, a group of planetary disk assemblies of an evaporation cavity is provided with three planetary disks, and one of the planetary disks is provided with a two-inch test piece placing groove;
s2, arranging a wafer placing groove on the planet disc, placing the wafer into the wafer placing groove, and placing two inch test pieces into the wafer placing groove;
s3, carrying out a wafer back metallization evaporation process;
s4, performing film thickness test on the two inches of test pieces, determining whether the thickness of the plating layer meets the requirement, and determining whether the appearance of the plating layer peels off or particles are generated, wherein the steps are as follows: a1, a damage test, namely drawing a Chinese character jing on two inches of test pieces by using an art designing knife, confirming whether a plating layer of the two inches of test pieces has a peeling phenomenon under the condition of external force damage, and ensuring whether the plating layer of the batch of products has abnormality during an evaporation process; and A2, testing tension, namely welding a copper wire on the plating layer on the back surface of the wafer, and performing pulling action by using a tension meter, and determining whether the plating layer is easy to peel off under the tension of 2 kilograms.
And S5, if the abnormity is confirmed, the batch of products need to be subjected to engineering analysis, and meanwhile, the evaporation equipment is stopped to suspend production so as to prevent more abnormal products from occurring.
2. The method for testing the thickness of the evaporated film according to claim 1, wherein: the two inches of test pieces take the film thickness test as the verification basis of the evaporation process after each evaporation process.
3. The method for testing the thickness of the evaporated film according to claim 1, wherein: the two inches of test pieces can be recycled, the surface coatings of the two inches of test pieces are cleaned by wet etching by using a chemical tank, and the two inches of test pieces are dried and placed in an oven for standby.
4. The method of claim 1, wherein the method comprises: the planet disk is umbrella-shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211289147.8A CN115747747A (en) | 2022-10-20 | 2022-10-20 | Method for testing thickness of evaporation coating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211289147.8A CN115747747A (en) | 2022-10-20 | 2022-10-20 | Method for testing thickness of evaporation coating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115747747A true CN115747747A (en) | 2023-03-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211289147.8A Pending CN115747747A (en) | 2022-10-20 | 2022-10-20 | Method for testing thickness of evaporation coating film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115747747A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118407014A (en) * | 2024-04-30 | 2024-07-30 | 普诺逊真空科技(苏州)有限公司 | Large-scale evaporation machine convenient to thick sample |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201890925U (en) * | 2010-12-02 | 2011-07-06 | 聚昌科技股份有限公司 | Evaporation tray with monitor strip |
| CN114284166A (en) * | 2021-12-28 | 2022-04-05 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | Metal plating sheet monitoring method |
-
2022
- 2022-10-20 CN CN202211289147.8A patent/CN115747747A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201890925U (en) * | 2010-12-02 | 2011-07-06 | 聚昌科技股份有限公司 | Evaporation tray with monitor strip |
| CN114284166A (en) * | 2021-12-28 | 2022-04-05 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | Metal plating sheet monitoring method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118407014A (en) * | 2024-04-30 | 2024-07-30 | 普诺逊真空科技(苏州)有限公司 | Large-scale evaporation machine convenient to thick sample |
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