CN115704677B - A metrological standard and its preparation method - Google Patents
A metrological standard and its preparation methodInfo
- Publication number
- CN115704677B CN115704677B CN202110932981.3A CN202110932981A CN115704677B CN 115704677 B CN115704677 B CN 115704677B CN 202110932981 A CN202110932981 A CN 202110932981A CN 115704677 B CN115704677 B CN 115704677B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
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- H10P74/00—
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The embodiment of the application discloses a measuring standard device which comprises a wafer carrier and a micro-nano scale standard piece for calibration, wherein a groove structure is arranged on the wafer carrier, and the micro-nano scale standard piece for calibration is detachably fixed in the groove structure. The micro-nano scale standard sheet for calibration in the metering standard device is detachable, meets the periodic calibration requirement, and can ensure the accuracy of the measurement value in long-term use.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a metering standard device and a preparation method thereof.
Background
IN the field of semiconductor manufacturing, each product undergoes hundreds of processes and measurement steps from the time of loading (FAB IN) to the time of shipment (FAB OUT), including at least thousands of measurement parameters, and the quality of each measurement value is related to the final quality of the product. Semiconductor metrology equipment plays an important role in the semiconductor industry. The semiconductor measurement device needs to be regularly calibrated to maintain the accuracy of the measurement value.
Currently, small-sized chip-scale nano-meter etalons (such as nano-scale line width, nano-scale one-dimensional/two-dimensional periodic grids, etc.) have been developed by various metering institutions, but semiconductor process line measuring equipment is fully automated. The chip scale metrology etalon cannot be directly used in the integrated circuit industry, resulting in a disconnection of nano-metrology from the industry. How to transfer the chip-level nano-metering standard device to a large-size wafer carrier to form the wafer-level nano-metering standard device so as to be compatible with a full-automatic production line to meet the requirement of on-line rapid metering calibration in the semiconductor industry becomes a difficult problem in the metering industry. On the other hand, how to ensure the accuracy of the magnitude in the long-term use process becomes a technical problem to be solved in the present stage.
Disclosure of Invention
Accordingly, embodiments of the present application provide a metrological standard to solve at least one of the problems of the prior art.
In order to achieve the above purpose, the technical scheme of the application is realized as follows:
according to an embodiment of the present application, there is provided a measurement standard including:
The wafer carrier is provided with a groove structure, and the micro-nano scale standard sheet for calibration is detachably fixed in the groove structure.
In some exemplary embodiments of the present application, at least one air guide channel is provided at the bottom of the groove structure, and the air guide channel penetrates through the groove structure and an external vacuum system, and the external vacuum system is used for vacuumizing the air guide channel.
In some exemplary embodiments of the present application, the wafer carrier includes a first wafer and a second wafer stacked, the recess structure penetrates through the first wafer, and a bottom surface of the recess structure is flush with an upper surface of the second wafer, wherein the upper surface of the second wafer is a surface of the second wafer facing the first wafer.
In some exemplary embodiments of the present application, the roughness of the bottom of the groove structure and/or the roughness of the lower surface of the calibration micro-nano-scale standard sheet is less than or equal to 10nm, wherein the lower surface of the calibration micro-nano-scale standard sheet is the surface of the calibration micro-nano-scale standard sheet facing the bottom of the groove structure.
In some exemplary embodiments of the application, the metrology etalon further comprises:
and the absorption assisting film is positioned between the micro-nano size standard sheet for calibration and the bottom of the groove structure, and the elastic modulus of the absorption assisting film is larger than that of the micro-nano size standard sheet for calibration.
In some exemplary embodiments of the present application, the gas guide channel is perpendicular to the wafer carrier, and the gas guide channel penetrates the wafer carrier under the groove structure.
In some exemplary embodiments of the present application, the openings at the top ends of the plurality of air guide channels are equal in size, and the plurality of air guide channels are arranged at equal intervals.
In some exemplary embodiments of the application, a plurality of the air guide channels communicate with each other.
In some exemplary embodiments of the application, the number of top openings of the air guide channel is greater than the number of bottom openings.
In some exemplary embodiments of the application, the number of top openings of the air guide channel is less than the number of bottom openings.
In some exemplary embodiments of the present application, the air guide channel is a through hole, and a diameter of a side of the through hole, which is close to the micro-nano-scale standard sheet for calibration, is larger than a diameter of a side, which is far from the micro-nano-scale standard sheet for calibration.
In some exemplary embodiments of the application, the depth of the groove structures and the thickness of the calibration micro-nano scale master are equal.
The embodiment of the application also provides a preparation method of the metering standard device, which comprises the following steps:
The method comprises the steps of providing a wafer carrier, forming a groove structure on the wafer carrier, forming at least one air guide channel at the bottom of the groove structure, enabling the air guide channel to penetrate through the groove structure and an external vacuum system, carrying out vacuumizing operation on the air guide channel through the external vacuum system, providing a micro-nano scale standard sheet for calibration, and attaching the micro-nano scale standard sheet for calibration in the groove structure.
In some exemplary embodiments of the present application, the forming a groove structure on the wafer carrier includes:
the groove structure is formed by adopting pulse laser, the pulse width of the pulse laser is less than or equal to 100ns, the power of the pulse laser is 10-300W, and the repetition frequency is 10-100 kHz.
In some exemplary embodiments of the present application, the providing a wafer carrier, forming a groove structure on the wafer carrier, includes:
Providing a first wafer, forming a through groove on the first wafer, providing a second wafer, bonding the first wafer and the second wafer, and forming a groove structure on the surface of the through groove and the surface of the second wafer.
In some exemplary embodiments of the application, after providing the micro-nano-sized standard for calibration, the method further comprises:
and forming an absorption assisting film on the lower surface of the micro-nano size standard sheet for calibration, wherein the elastic modulus of the absorption assisting film is larger than that of the micro-nano size standard sheet for calibration, and the lower surface of the micro-nano size standard sheet for calibration is the surface of the micro-nano size standard sheet for calibration to be attached to the bottom of the groove structure.
In some exemplary embodiments of the present application, at least one air guide channel is formed at the bottom of the groove structure, including:
The air guide channel is formed by adopting pulse laser, the pulse width of the pulse laser is less than or equal to 50ps, the power of the pulse laser is 10-100W, and the repetition frequency is 100-2000 kHz.
The embodiment of the application provides a measuring standard device which comprises a wafer carrier and a micro-nano scale standard piece for calibration, wherein a groove structure is arranged on the wafer carrier, and the micro-nano scale standard piece for calibration is detachably fixed in the groove structure. The micro-nano scale standard sheet for calibration in the metering standard device is detachable, meets the periodic calibration requirement, and can ensure the accuracy of the measurement value in long-term use.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
FIG. 1 is a schematic cross-sectional view of a related art metrology standard;
FIG. 2 is a schematic cross-sectional view of a metrology standard according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIG. 4a is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIG. 4b is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIG. 5 is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIG. 8 is a schematic cross-sectional view of a metrology standard according to another embodiment of the present application;
FIGS. 9a-9b are schematic cross-sectional views of a metrology standard according to another embodiment of the present application;
FIG. 10 is a flowchart of a method for manufacturing a metrological standard provided by an embodiment of the present application;
Fig. 11a to 11d are schematic views of device structures of a measurement standard device in a manufacturing process according to an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the application are shown in the drawings, it should be understood that the application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the application may be practiced without one or more of these details. In other instances, well-known functions and constructions are not described in detail since they would obscure the application in some of the features that are well known in the art, i.e., not all features of an actual embodiment are described herein.
In the drawings, the size of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. When a second element, component, region, layer or section is discussed, it does not necessarily mean that the first element, component, region, layer or section is present.
Spatial relationship terms such as "under", "above", "over" and the like may be used herein for convenience of description to describe one element or feature as illustrated in the figures in relation to another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present application, detailed steps and detailed structures will be presented in the following description in order to explain the technical solution of the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other embodiments in addition to these detailed descriptions.
Fig. 1 is a schematic cross-sectional view of a related art metrology standard in the industry, where the metrology standard includes a wafer carrier 101, a micro-nano-scale calibration standard sheet 105, and a groove structure 103 disposed on the wafer carrier 101, and the micro-nano-scale calibration standard sheet 105 is fixed in the groove structure 103 by an adhesive material 107. The measuring standard device adopts a dispensing process to transfer the micro-nano scale standard sheet for calibration to the groove of the wafer to form the wafer-level measuring standard device. The sticking and fixing mode leads to the fact that the micro-nano scale standard sheet for calibration cannot be taken out from the wafer carrier in the later period, and further cannot meet the periodic calibration requirement of the metering standard. The micro-nano scale standard sheet for the type calibration needs to be calibrated once every year so as to ensure the accuracy of the magnitude. For example, integrated circuit manufacturers require standard wafers (e.g., nanometer linewidth etalons) to calibrate full-automatic Scanning Electron Microscopes (SEM). In order to ensure the process quality of the semiconductor industry, a new calibrated standard sheet must be purchased and replaced, so that on one hand, the production cost is increased, and on the other hand, the purchasing period also increases the production risk of enterprises. And the height of the bonding material is difficult to control, so that the height difference between the micro-nano scale standard sheet for calibration and the surface of the wafer carrier cannot be accurately controlled, and the measurement effect is affected. In summary, standard pieces manufactured by the prior wafer-level measurement standard device technical scheme are all authenticated at one time, and in the long-term use process, the standard pieces cannot be re-authenticated, so that the long-term accuracy of the measurement value cannot be ensured.
Based on this, an embodiment of the present application provides a measurement standard, and fig. 2 is a schematic cross-sectional view of the measurement standard provided by the embodiment of the present application. Referring to fig. 2, the measuring standard device comprises a wafer carrier 101, a micro-nano scale standard sheet 105 for calibration, wherein a groove structure 103 is arranged on the wafer carrier 101, and the micro-nano scale standard sheet 105 for calibration is detachably fixed in the groove structure 103. The micro-nano scale standard sheet for calibration in the metering standard device is detachable, meets the periodic calibration requirement, and can ensure the accuracy of the measurement value in long-term use.
In practice, the wafer carrier 101 may be a silicon wafer (Si wafer), a glass wafer (GLASS WAFER), a gallium nitride wafer (GaN wafer), a silicon carbide wafer (SiC wafer), a sapphire wafer (SAPPHIRE WAFER), a gallium arsenide wafer (GAAS WAFER), or the like. The thickness of the wafer carrier may be 775±20 μm, for example. The wafer carrier may be 6 inches, 8 inches, or 12 inches, for example. The nanometer geometrical characteristic parameters of the micro-nano scale standard sheet for calibration include, but are not limited to, line width, grids, steps, film thickness and the like.
In some embodiments of the present application, the depth of the groove structures 103 and the thickness of the calibration micro-nano scale standard 105 are equal. The dimensions of the recess structure 103 may be, for example, 20.05x20.05x300 μm (length x width x height), and may be formed by a wet or dry etching process. The micro-nano-scale standard sheet 105 for calibration may have a size of 20×20×300um (length×width×height), for example. Therefore, the micro-nano scale standard sheet for calibration is inlaid in the groove, the volume of the micro-nano scale standard sheet for calibration exposed out of the surface of the wafer carrier is reduced, and the stability of the micro-nano scale standard sheet for calibration on the wafer carrier is improved.
In some embodiments of the present application, as shown in fig. 2, at least one air guide channel 109 is disposed at the bottom of the groove structure 103, and the air guide channel 109 penetrates through the groove structure 103 and an external vacuum system 111, and the external vacuum system 111 is used for vacuumizing the air guide channel. When the measuring standard device is needed, the micro-nano scale standard sheet for vacuum adsorption calibration can be utilized by an external vacuum system, and the standard can be detached after the use is finished. After long-term use, the calibration micro-nano scale standard sheet is required to be authenticated and calibrated, and the detached calibration micro-nano scale standard sheet can be independently calibrated, so that the accuracy of the magnitude is ensured, and the periodic calibration requirement is met. When the wafer carrier and the micro-nano scale standard sheet for calibration are damaged, only the damaged part is needed to be replaced, and the new measuring standard device is manufactured, so that the cost is low, the period is quick, and the production risk of enterprises is reduced.
In actual operation, the air guide channel may be formed by etching or laser grooving.
In some embodiments of the present application, the gas guide channels are perpendicular to the wafer carrier, and the gas guide channels 109 extend through the wafer carrier below the groove structures 103. Thus, the gas flow is facilitated, and the vacuum pumping efficiency of the external vacuum system is improved.
In some embodiments of the present application, as shown in fig. 3, the openings W1 at the top ends of the plurality of air guide channels 109 are equal, and the plurality of air guide channels are arranged at equal intervals W2. In practical operation, the air guide channel may be, for example, cylindrical, the opening size W1 may be 10 to 2000 μm, and the interval W2 between the air guide channels may be 100 to 4000 μm. The plurality of air guide channels are uniformly distributed, and the uniformity of the adsorption force can be improved when the external vacuum system is vacuumized.
In some embodiments of the present application, the roughness of the bottom of the groove structure 103 and/or the roughness of the lower surface of the calibration micro-nano-scale standard 105 is less than or equal to 10nm, wherein the lower surface of the calibration micro-nano-scale standard is the surface of the calibration micro-nano-scale standard facing the bottom of the groove structure. Therefore, through the improvement of flatness, gas leakage is reduced, and the vacuum adsorption effect of an external vacuum system can be improved.
In some embodiments of the present application, as shown in fig. 4a-4b, the metering standard further comprises a suction assisting film 113, wherein the suction assisting film 113 is located between the micro-nano-scale calibration standard 105 and the bottom of the groove structure 103, and the elastic modulus of the suction assisting film 113 is greater than the elastic modulus of the micro-nano-scale calibration standard 105. In practice, as shown in fig. 4a, the suction assisting film 113 may be coated or attached on the lower surface of the micro-nano scale standard sheet 105 for calibration. Alternatively, as shown in fig. 4b, the wicking membrane 113 may be coated or otherwise attached to the bottom of the groove structure 103. When the bottom of the groove or the micro-nano size standard sheet for calibration is coarser, the vacuum auxiliary suction film can be adopted to reduce gas leakage and improve the adsorption effect.
In some embodiments of the present application, as shown in fig. 5, the wafer carrier includes a first wafer 101-1 and a second wafer 101-2 stacked, the recess structure 103 penetrates the first wafer 101-1, and a bottom surface of the recess structure 103 is flush with an upper surface 111 of the second wafer 101-2, where the upper surface of the second wafer is a surface of the second wafer facing the first wafer. In practical operation, the thickness of the first wafer 101-1 may be 300±10μm, for example, and the thickness of the second wafer 101-2 may be 475±10μm, for example. The groove structure may be formed using a pulsed laser. When the etching process is used for forming the groove, the surface roughness of the bottom of the groove is poor, the adsorption effect is affected, and the etching requires a photomask, so that the process cost is high. The scheme adopts two wafers, and pulse lasers are respectively adopted in the respective wafers to form a groove structure and an air guide channel. The upper surface of the second wafer is used as the bottom surface of the groove structure, so that lower roughness can be achieved, and the adsorption effect is improved. In practice, the roughness of the upper surface of the second wafer may be controlled by an abrasive polishing process. On the other hand, compared with the pulse laser, the pulse laser has high etching slotting efficiency and does not need the cost of a photomask.
In some embodiments of the present application, as shown in fig. 6, a plurality of the air guide channels 109 are in communication with each other. In practical operation, the method can be realized by longitudinal etching and lateral etching, or by respectively forming air guide channels in a plurality of wafers and bonding the wafers. The plurality of air guide channels are communicated, so that the vacuum degree in the air guide channels is kept consistent, the adsorption force is uniform, and the problem of adsorption force reduction caused by blockage of the plurality of air guide channels is avoided.
In some embodiments of the present application, as shown in FIG. 7, the number of top openings 109-1 of the air guide channels is greater than the number of bottom openings 109-2. The more the top openings of the air guide channels are, the larger the effective adsorption area is, and the larger and even the adsorption force is.
In some embodiments of the present application, as shown in FIG. 8, the number of top openings 109-1 of the air guide channels is less than the number of bottom openings 109-2. The common structure has different degrees of air leakage, and the more the bottom end opening of the air guide channel is, the air flow is increased, namely the air extraction rate is increased, the vacuum degree can be increased, and the adsorption force is further enhanced or stabilized.
In some embodiments of the present application, as shown in fig. 9a, the air guide channel 109 is a through hole, and a diameter W3 of the through hole on a side close to the micro-nano-scale standard for calibration is larger than a diameter W4 of the through hole on a side far from the micro-nano-scale standard for calibration. In actual operation, the air guide channel may be, for example, a circular truncated cone with a hole taper smaller than 0.2. Therefore, the adsorption force is more uniform, and the stability of the micro-nano scale standard sheet for calibration on the wafer carrier is improved. On the other hand, when the etching process is used for forming the air guide channel, compared with a vertical column body, the circular truncated cone-shaped air guide channel is easier to realize and lower in cost. In some other embodiments, as shown in fig. 9b, the air guiding channels may also be cylindrical channels with different widths, for example, the air guiding channels include a cylindrical channel 109-1 with a width W5 at the top and a cylindrical channel 109-2 with a width W6 at the bottom, where W5 is greater than W6. In some embodiments, the air guide channel comprises cylindrical channels with different widths from top to bottom, the width of the air guide channel at the upper part is larger than that of the air guide channel at the lower part, and the air guide channel at the upper part is a round table with a hole taper of less than 0.2.
The embodiment of the application also provides a preparation method of the measurement standard, referring to fig. 10, the method comprises the following steps:
step 1001, providing a wafer carrier, and forming a groove structure on the wafer carrier;
Step 1002, forming at least one air guide channel at the bottom of the groove structure, wherein the air guide channel penetrates through the groove structure and an external vacuum system;
step 1003, carrying out vacuumizing operation on the air guide channel through the external vacuum system;
And 1004, providing a micro-nano scale standard sheet for calibration, and attaching the micro-nano scale standard sheet for calibration in the groove structure.
The method for preparing the measuring standard device provided by the embodiment of the application is further described in detail below with reference to specific examples.
Fig. 11a to 11d are schematic views of device structures of a measurement standard device in a manufacturing process according to an embodiment of the present application.
First, referring to fig. 11a, a wafer carrier 101 is provided, and a groove structure 103 is formed on the wafer carrier 101, step 1001 is performed. The wafer carrier 101 may be a silicon wafer (Si wafer), a glass wafer (GLASS WAFER), a gallium nitride wafer (GaN wafer), a silicon carbide wafer (SiC wafer), a sapphire wafer (SAPPHIRE WAFER), a gallium arsenide wafer (GAAS WAFER), or the like. The thickness of the wafer carrier may be 775±20 μm, for example. The wafer carrier may be 6 inches, 8 inches, or 12 inches, for example.
In some embodiments of the present application, the forming the groove structure on the wafer carrier includes forming the groove structure using a pulsed laser having a pulse width of less than or equal to 100ns, a power of the pulsed laser being 10 to 300W, and a repetition rate of 10 to 100kHz.
Next, referring to fig. 11b, step 1002 is performed to form at least one air guide channel 109 at the bottom of the groove structure 101, wherein the air guide channel penetrates through the groove structure and the external vacuum system. In actual operation, the air guide channel may be formed by etching or laser grooving.
In some embodiments of the application, the wafer carrier is provided with a groove structure formed on the wafer carrier, and the method comprises the steps of providing a first wafer, forming a through groove on the first wafer, providing a second wafer, bonding the first wafer and the second wafer, and forming the groove structure from the through groove and the surface of the second wafer. In practical operation, the thickness of the first wafer may be 300±10μm, for example, and the thickness of the second wafer may be 475±10μm, for example.
In some embodiments of the application, forming at least one air guide channel at the bottom of the groove structure comprises forming the air guide channel by pulse laser, wherein the pulse width of the pulse laser is less than or equal to 50ps, the power of the pulse laser is 10-100W, and the repetition frequency is 100-2000 kHz.
In some embodiments of the present application, the gas guide channels are perpendicular to the wafer carrier, and the gas guide channels 109 extend through the wafer carrier below the groove structures 103.
In some embodiments of the present application, the openings at the top ends of the air guide channels 109 are equal in size, and the air guide channels are equally spaced. In practical operation, the air guide channel may be, for example, cylindrical, the opening size W1 may be 10 to 2000 μm, and the interval W2 between the air guide channels may be 100 to 4000 μm.
In some embodiments of the application, a plurality of the air guide channels 109 are in communication with each other.
In some embodiments of the application, the number of top openings of the air guide channel is greater than the number of bottom openings.
In some embodiments of the application, the number of top openings of the air guide channel is less than the number of bottom openings.
In some embodiments of the present application, the air guide channel 109 is a through hole, and the diameter of the side of the through hole near the calibration micro-nano scale standard plate is larger than the diameter of the side far from the calibration micro-nano scale standard plate. In some other embodiments, the air guide channel may also be a cylindrical channel with different widths. In some embodiments, the air guide channel comprises cylindrical channels with different widths from top to bottom, the width of the air guide channel at the upper part is larger than that of the air guide channel at the lower part, and the air guide channel at the upper part is a round table with a hole taper of less than 0.2.
Then, referring to fig. 11c, step 1003 is performed to perform a vacuum pumping operation on the air guide channel through the external vacuum system 111;
finally, referring to fig. 11d, step 1104 is performed to provide a micro-nano-scale standard sheet 105 for calibration, and the micro-nano-scale standard sheet 105 for calibration is attached in the groove structure 103.
In some embodiments of the present application, the depth of the groove structures 103 and the thickness of the calibration micro-nano scale standard 105 are equal. The dimensions of the recess structure 103 may be, for example, 20.05x20.05x300 μm (length x width x height), and may be formed by a wet or dry etching process. The micro-nano-scale standard sheet 105 for calibration may have a size of 20×20×300 μm (length×width×height), for example. The nanometer geometrical characteristic parameters of the micro-nano scale standard sheet for calibration include, but are not limited to, line width, grids, steps, film thickness and the like.
In some embodiments of the present application, the roughness of the bottom of the groove structure 103 and/or the roughness of the lower surface of the calibration micro-nano-scale standard 105 is less than or equal to 10nm, wherein the lower surface of the calibration micro-nano-scale standard is the surface of the calibration micro-nano-scale standard facing the bottom of the groove structure.
In some embodiments of the application, after providing the micro-nano size standard sheet for calibration, the method further comprises forming an absorption assisting film on the lower surface of the micro-nano size standard sheet for calibration, wherein the elastic modulus of the absorption assisting film is larger than that of the micro-nano size standard sheet for calibration, and the lower surface of the micro-nano size standard sheet for calibration is the surface to be attached to the bottom of the groove structure.
In summary, the micro-nano scale standard sheet for calibration in the metering standard device is detachable, meets the periodic calibration requirement, and can ensure the accuracy of the measurement value in long-term use.
It should be noted that the measurement standard device and the preparation method thereof provided by the embodiment of the application can be applied to online calibration of high-precision measuring instruments of any wafer-level semiconductor production line, such as a scanning electron microscope, an atomic force microscope, a full-automatic optical microscope and the like. The features of the embodiments described in the present application may be combined arbitrarily without any conflict.
The above description is not intended to limit the scope of the application, but is intended to cover any modifications, equivalents, and improvements within the spirit and principles of the application.
Claims (15)
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| CN202110932981.3A CN115704677B (en) | 2021-08-13 | 2021-08-13 | A metrological standard and its preparation method |
| PCT/CN2021/128163 WO2023015740A1 (en) | 2021-08-13 | 2021-11-02 | Measurement standard device and preparation method therefor |
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| CN202110932981.3A CN115704677B (en) | 2021-08-13 | 2021-08-13 | A metrological standard and its preparation method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205342781U (en) * | 2016-01-21 | 2016-06-29 | 苏州新美光纳米科技有限公司 | Polishing pad for wafer polishing |
| CN207593516U (en) * | 2017-12-13 | 2018-07-10 | 中国电子科技集团公司第十三研究所 | A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device |
| CN110945660A (en) * | 2019-11-12 | 2020-03-31 | 深圳市汇顶科技股份有限公司 | Stacked chip, manufacturing method, image sensor and electronic device |
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| JPS56113115A (en) * | 1980-02-13 | 1981-09-05 | Mitsubishi Electric Corp | Sample table for immersion system microscope |
| JP3488745B2 (en) * | 1994-07-20 | 2004-01-19 | 独立行政法人産業技術総合研究所 | Dimension calibration sample mounting stage and dimensional calibration sample |
| EP1408538A4 (en) * | 2001-07-19 | 2008-07-09 | Nikon Corp | POLISHING ELEMENT, MECHANICAL CHEMICAL POLISHING DEVICE (CMP) AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| JP3967668B2 (en) * | 2002-11-25 | 2007-08-29 | 株式会社日立ハイテクサイエンスシステムズ | Micro-dimensional standard sample and manufacturing method thereof |
| CN102012640B (en) * | 2009-09-04 | 2013-09-11 | 上海微电子装备有限公司 | Pre-alignment method and device for being compatible with broken silicon wafers |
| CN110098143B (en) * | 2018-01-31 | 2021-06-04 | 上海微电子装备（集团）股份有限公司 | A chip adsorption device and chip bonding system |
| US11081392B2 (en) * | 2018-09-28 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for stacked semiconductor devices |
| CN209849212U (en) * | 2019-03-29 | 2019-12-27 | 江苏华兴激光科技有限公司 | Sample tray of spin coater |
| CN211700232U (en) * | 2020-03-05 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Bearing device and epitaxial reaction chamber |
| CN111693003A (en) * | 2020-06-19 | 2020-09-22 | 西安微电子技术研究所 | Wafer-level nanoscale measurement standard device and manufacturing method thereof |
| CN112114285A (en) * | 2020-09-28 | 2020-12-22 | 西安交通大学 | Wafer standard template containing multiple calibration types and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205342781U (en) * | 2016-01-21 | 2016-06-29 | 苏州新美光纳米科技有限公司 | Polishing pad for wafer polishing |
| CN207593516U (en) * | 2017-12-13 | 2018-07-10 | 中国电子科技集团公司第十三研究所 | A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device |
| CN110945660A (en) * | 2019-11-12 | 2020-03-31 | 深圳市汇顶科技股份有限公司 | Stacked chip, manufacturing method, image sensor and electronic device |
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