CN115664374A - Surface acoustic wave resonator device and method of forming the same - Google Patents
Surface acoustic wave resonator device and method of forming the same Download PDFInfo
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Abstract
A surface acoustic wave resonance device and a forming method thereof relate to the technical field of semiconductor manufacturing, wherein the device comprises: a piezoelectric substrate; the electrode structure is positioned on the piezoelectric substrate and comprises a first metal layer, a second metal layer and a third metal layer, and the material density of the first metal layer and the material density of the third metal layer are greater than that of the second metal layer. By additionally arranging the third metal layer with higher material density, the acoustic migration phenomenon of metal with low material density can be effectively inhibited, and the power tolerance of the surface acoustic wave resonance device is improved. In addition, since the thickness of the electrode structure affects the resonance frequency of the surface acoustic wave resonator device, the influence of the thickness of the metal of high material density on the frequency is more significant than that of the metal of low material density. Therefore, the thickness of the third metal layer can be regulated and controlled by additionally arranging the third metal layer with higher material density, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a surface acoustic wave resonance device and a forming method thereof.
Background
A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. The rf filter includes a piezoelectric Acoustic surface Wave (SAW) filter, a Bulk Acoustic Wave (BAW) filter, a Micro-Electro-Mechanical System (MEMS) filter, an Integrated Passive Device (IPD) filter, and the like.
The quality factor value (Q value) of the SAW resonator is high, and the SAW resonator is made into a radio frequency filter with low insertion loss and high out-of-band rejection, that is, a SAW filter, which is a mainstream radio frequency filter used in wireless communication equipment such as mobile phones and base stations at present. Where the Q value is the quality factor value of the resonator, defined as the center frequency divided by the 3dB bandwidth of the resonator. The frequency of use of the SAW filter is generally 0.4GHz to 2.7GHz.
However, the surface acoustic wave resonator device still remains to be improved.
Disclosure of Invention
The invention aims to provide a surface acoustic wave resonance device and a forming method thereof, so as to improve the power tolerance of a device and the flexibility and controllability of a frequency modulation mode.
In order to solve the above problems, the present invention provides a surface acoustic wave resonator device comprising: a piezoelectric substrate; an electrode structure on the piezoelectric substrate, the electrode structure including a first metal layer, a second metal layer on the first metal layer, and a third metal layer on the second metal layer, the first metal layer and the third metal layer having material densities greater than that of the second metal layer; a temperature compensation layer on the piezoelectric substrate, the temperature compensation layer covering the electrode structure.
Optionally, the electrode structure further includes: one or more of a first adhesion layer, a second adhesion layer, and a third adhesion layer, wherein the first adhesion layer is between the first metal layer and the piezoelectric substrate, the second adhesion layer is between the first metal layer and the second metal layer, and the third adhesion layer is between the second metal layer and the third metal layer.
Optionally, the electrode structure includes: the electrode structure comprises a plurality of first electrode strips, a plurality of first bus bars connected with the first electrode strips, a plurality of second electrode strips and a second bus bar connected with the second electrode strips, wherein the first electrode strips and the second electrode strips are positioned between the first bus bars and the second bus bars and are arranged in a staggered mode.
Optionally, the material of the first metal layer includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
Optionally, the material of the second metal layer includes: one or more of aluminum, copper and magnesium.
Optionally, the material of the third metal layer includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
Optionally, the first metal layer and the third metal layer are made of the same material.
Optionally, the first metal layer and the third metal layer are made of different materials.
Optionally, the material of the first adhesion layer includes: titanium, chromium, titanium nitride, titanium tungsten alloy or nickel chromium alloy, and the material of the second adhesion layer comprises: titanium, chromium, titanium nitride, titanium tungsten alloy or nickel chromium alloy, wherein the third adhesion layer comprises the following materials: titanium, chromium, titanium nitride, titanium tungsten alloy, or nickel chromium alloy.
Optionally, the thickness of the first metal layer is: 50 nm to 300 nm; the thickness of the second metal layer is as follows: 50 nm to 500 nm; the thickness of the third metal layer is as follows: 5 to 100 nm.
Optionally, the thickness of the first adhesion layer is: 0 nm to 30 nm, wherein the thickness of the second adhesion layer is as follows: 0 nm to 30 nm, wherein the thickness of the third adhesion layer is as follows: 0 nm to 30 nm.
Correspondingly, the technical scheme of the invention also provides a method for forming the surface acoustic wave resonance device, which comprises the following steps: providing a piezoelectric substrate; forming an electrode structure on the piezoelectric substrate, wherein the electrode structure comprises a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer, and the material density of the first metal layer and the material density of the third metal layer are greater than that of the second metal layer; and forming a temperature compensation layer on the piezoelectric substrate, wherein the temperature compensation layer covers the electrode structure.
Optionally, the forming method of the electrode structure includes: forming a first metal material layer on the piezoelectric substrate; forming a second metal material layer on the first metal material layer; forming a third metal material layer on the second metal material layer; and carrying out graphic processing on the first metal material layer, the second metal material layer and the third metal material layer to form the electrode structure.
Optionally, after forming the third metal material layer and before the patterning process, the method further includes: and thinning the third metal material layer.
Optionally, after the forming the electrode structure, the method further includes: and thinning the third metal layer.
Optionally, the forming method of the electrode structure includes: forming a patterned photoresist layer on the piezoelectric substrate; forming a first metal material layer on the piezoelectric substrate by taking the graphical photoresist layer as a mask, wherein the first metal material layer covers the exposed surface of the piezoelectric substrate and the top surface of the graphical photoresist layer; forming a second metal material layer on the first metal material layer; forming a third metal material layer on the second metal material layer; and removing the patterned photoresist layer, and carrying out stripping treatment on the first metal material layer, the second metal material layer and the third metal material layer on the patterned photoresist layer to form the electrode structure.
Optionally, after forming the third metal material layer and before the stripping treatment, the method further includes: and thinning the third metal material layer.
Optionally, after the forming the electrode structure, the method further includes: and thinning the third metal layer.
Optionally, the forming method of the electrode structure further includes: forming one or more of a first adhesion material layer, a second adhesion material layer and a third adhesion material layer, wherein the first adhesion material layer is positioned between the first metal material layer and the piezoelectric substrate, the second adhesion material layer is positioned between the first metal material layer and the second metal material layer, and the third adhesion material layer is positioned between the second metal material layer and the third metal material layer; and patterning one or more of the first adhesion material layer, the second adhesion material layer and the third adhesion material layer to form one or more of the corresponding first adhesion layer, second adhesion layer and third adhesion layer.
Optionally, the forming method of the electrode structure further includes: the first electrode strips and the first bus bar connected with the first electrode strips form a plurality of second electrode strips and a second bus bar connected with the second electrode strips, and the first electrode strips and the second electrode strips are positioned between the first bus bar and the second bus bar and are arranged in a staggered mode.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the surface acoustic wave resonator device according to the present invention, the electrode structure includes a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer, and material densities of the first metal layer and the third metal layer are greater than a material density of the second metal layer. By additionally arranging the third metal layer with higher material density, the acoustic migration phenomenon of metal with low material density can be effectively inhibited, and the power tolerance of the surface acoustic wave resonance device is improved. In addition, since the thickness of the electrode structure affects the resonance frequency of the surface acoustic wave resonator device, the thickness of the metal having a high material density affects the resonance frequency of the surface acoustic wave resonator more significantly than the metal having a low material density. Therefore, by additionally arranging the third metal layer with higher material density, the thickness of the third metal layer can be regulated and controlled in modes of ion bombardment or etching and the like, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
Further, the electrode structure further includes: one or more of a first adhesion layer, a second adhesion layer, and a third adhesion layer, wherein the first adhesion layer is between the first metal layer and the piezoelectric substrate, the second adhesion layer is between the first metal layer and the second metal layer, and the third adhesion layer is between the second metal layer and the third metal layer. When the metal materials of the first metal layer, the second metal layer and the third metal layer are selected, the bonding property between partial metal materials or between the metal material and the piezoelectric substrate is poor. Therefore, the first adhesion layer, the second adhesion layer or the third adhesion layer can be added to better improve the binding property between the metal layers or between the metal layers and the piezoelectric substrate, and further improve the performance of the surface acoustic wave resonator.
In the method for forming a surface acoustic wave resonator device according to the present invention, the electrode structure includes a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer, and material densities of the first metal layer and the third metal layer are greater than a material density of the second metal layer. By additionally arranging the third metal layer with higher material density, the acoustic migration phenomenon of metal with low material density can be effectively inhibited, and the power tolerance of the surface acoustic wave resonance device is improved. In addition, since the thickness of the electrode structure affects the resonance frequency of the surface acoustic wave resonator device, the thickness of the metal having a high material density affects the resonance frequency of the surface acoustic wave resonator more significantly than the metal having a low material density. Therefore, by additionally arranging the third metal layer with higher material density, the thickness of the third metal layer can be regulated and controlled in modes of ion bombardment or etching and the like, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
Further, the forming method of the electrode structure further comprises the following steps: forming one or more of a first adhesion material layer, a second adhesion material layer and a third adhesion material layer, wherein the first adhesion material layer is positioned between the first metal material layer and the piezoelectric substrate, the second adhesion material layer is positioned between the first metal material layer and the second metal material layer, and the third adhesion material layer is positioned between the second metal material layer and the third metal material layer; and patterning one or more of the first adhesion material layer, the second adhesion material layer and the third adhesion material layer to form one or more of the corresponding first adhesion layer, second adhesion layer and third adhesion layer. When the metal materials of the first metal material layer, the second metal material layer and the third metal material layer are selected, the bonding performance between partial metal materials or between the metal materials and the piezoelectric substrate is poor. Therefore, the first adhesion material layer, the second adhesion material layer or the third adhesion material layer can be added to better improve the binding property between the metal material layers or between the metal material layers and the piezoelectric substrate, and further improve the performance of the surface acoustic wave resonance device.
Drawings
Fig. 1 is a schematic view of a structure of a surface acoustic wave resonator device;
FIGS. 2 to 9 are schematic structural views of steps of a surface acoustic wave resonator device and a method for forming the same according to an embodiment of the present invention;
FIGS. 10 to 13 are schematic structural views of steps of a surface acoustic wave resonator device and a method of forming the same according to another embodiment of the present invention;
FIGS. 14 to 19 are schematic structural views of steps of a surface acoustic wave resonator device and a method of forming the same according to still another embodiment of the present invention;
fig. 20 to 21 are schematic structural views of respective steps of a surface acoustic wave resonator device and a method of forming the same according to still another embodiment of the present invention.
Detailed Description
As described in the background, the surface acoustic wave resonator device still remains to be improved. Fig. 1 is a schematic view of the structure of a surface acoustic wave resonator device.
Referring to fig. 1, a surface acoustic wave resonator device includes: a piezoelectric substrate 100; an electrode structure 101 located on the piezoelectric substrate 100, where the electrode structure 101 includes a first metal layer 101a and a second metal layer 101b located on the first metal layer 101a, and a material density of the first metal layer 101a is greater than a material density of the second metal layer 101 b; a temperature compensation layer 102 on the piezoelectric substrate 100, the temperature compensation layer 102 covering the electrode structure 101.
In this embodiment, when the surface acoustic wave resonator device operates under a high power condition, the second metal layer 101b located on the upper layer and having a lower material density may undergo severe acoustic migration, resulting in the occurrence of voids, hilly defects, and rearrangement of grain boundaries in the electrode structure 101, which may cause the electrode structure 101 to fracture in a severe case, thereby causing the surface acoustic wave resonator device to fail.
On this basis, the invention provides a surface acoustic wave resonator device and a method for forming the same, wherein the electrode structure comprises a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer, and the material density of the first metal layer and the third metal layer is greater than that of the second metal layer. By additionally arranging the third metal layer with higher material density, the acoustic migration phenomenon of metal with low material density can be effectively inhibited, and the power tolerance of the surface acoustic wave resonance device is improved. In addition, since the thickness of the electrode structure affects the resonance frequency of the surface acoustic wave resonator device, the thickness of the metal having a high material density affects the resonance frequency of the surface acoustic wave resonator more significantly than the metal having a low material density. Therefore, by additionally arranging the third metal layer with higher material density, the thickness of the third metal layer can be regulated and controlled in modes of ion bombardment or etching and the like, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 9 are schematic structural views of steps of a method of forming a surface acoustic wave resonator device according to an embodiment of the present invention.
Referring to fig. 2, a piezoelectric substrate 200 is provided.
In the present embodiment, the material of the piezoelectric substrate 200 includes: lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate, aluminum nitride alloy, gallium nitride, or zinc oxide.
After providing the piezoelectric substrate 200, further comprising: forming an electrode structure on the piezoelectric substrate 200, wherein the electrode structure includes a first metal layer, a second metal layer on the first metal layer, and a third metal layer on the second metal layer, and the material density of the first metal layer and the third metal layer is greater than that of the second metal layer. Please refer to fig. 3 to 8 for a specific forming process of the electrode structure.
Referring to fig. 3, a first metal material layer 201 is formed on the piezoelectric substrate 200.
In this embodiment, the material of the first metal material layer 201 includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
In this embodiment, the thickness of the first metal material layer 201 is: 50 nm to 300 nm.
Referring to fig. 4, a second metal material layer 202 is formed on the first metal material layer 201.
In this embodiment, the material of the second metal material layer 202 includes: one or more of aluminum, copper and magnesium.
In this embodiment, the thickness of the second metal material layer 202 is: 50 nm to 500 nm.
Referring to fig. 5, a third metal material layer 203 is formed on the second metal material layer 202.
In this embodiment, the material of the third metallic material layer 203 includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
Referring to fig. 6, the third metal material layer 203 is thinned.
In this embodiment, the thickness of the third metal material layer 203 after the thinning process is: 5 to 100 nm.
In other embodiments, the third metal layer may be thinned after the electrode structure is formed.
Referring to fig. 7 and 8, fig. 8 isbase:Sub>A schematic cross-sectional view taken alongbase:Sub>A linebase:Sub>A-base:Sub>A in fig. 7, and the first metal material layer 201, the second metal material layer 202 and the third metal material layer 203 are patterned to form the electrode structure 204.
In this embodiment, the method for graphics processing includes: forming a patterned layer (not shown) on the third metallic material layer 203, the patterned layer exposing a portion of a top surface of the third metallic material layer 203; and etching the first metal material layer 201, the second metal material layer 202 and the third metal material layer 203 by using the patterned layer as a mask until the surface of the piezoelectric substrate 200 is exposed, so as to form the electrode structure 204.
It should be noted that, in this embodiment, after the patterning process, the first metal layer 204a is formed based on the first metal material layer 201, and the material of the first metal layer 204a also includes: molybdenum, tungsten, platinum, palladium, ruthenium and tantalum, wherein the thickness of the first metal layer 204a is: 50-300 nm; forming the second metal layer 204b based on the second metal material layer 202, the material of the second metal layer 204b also including: one or more of aluminum, copper and magnesium, and the thickness of the second metal layer 204b is: 50 nm to 500 nm; forming the third metal layer 204c based on the third metal material layer 203, the material of the third metal layer 204c also including: molybdenum, tungsten, platinum, palladium, ruthenium and tantalum, and the thickness of the third metal layer 204c is: 5 to 100 nm.
In this embodiment, the material of the first metal layer 204a is the same as the material of the third metal layer 204 c.
In other embodiments, the material of the first metal layer and the material of the third metal layer may also be different.
With reference to fig. 7, in the present embodiment, the method for forming the electrode structure 204 further includes: a plurality of first electrode stripes 2041 and a first bus 2042 connecting the plurality of first electrode stripes 2041, a plurality of second electrode stripes 2043 and a second bus 2044 connecting the plurality of second electrode stripes 2043 are formed, and the plurality of first electrode stripes 2041 and the plurality of second electrode stripes 2043 are positioned between the first bus 2042 and the second bus 2044 and are arranged in a staggered manner.
In this embodiment, by adding the third metal layer 204c with a higher material density, the acoustic migration phenomenon of a metal with a low material density can be effectively suppressed, and the power tolerance of the surface acoustic wave resonator device can be improved. In addition, since the thickness of the electrode structure 204 affects the resonance frequency of the saw resonator device, the thickness of the metal having a high material density affects the resonance frequency of the saw resonator more significantly than the metal having a low material density. Therefore, by additionally arranging the third metal layer 204c with higher material density, the thickness of the third metal layer 204c can be regulated and controlled in modes of ion bombardment or etching and the like, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
Referring to fig. 9, fig. 9 is a view in the same direction as fig. 8, and a temperature compensation layer 205 is formed on the piezoelectric substrate 200, wherein the temperature compensation layer 205 covers the electrode structure 204.
It should be noted that the Temperature compensation layer 205 and the piezoelectric substrate 200 have opposite Temperature Frequency shift characteristics, and a Temperature Coefficient of Frequency (TCF) can be adjusted to tend to 0 ppm/deg.c, so that the characteristic that the operating Frequency of the surface acoustic wave resonator shifts with the operating Temperature is improved, and the surface acoustic wave resonator has higher Frequency-Temperature stability.
In this embodiment, the material of the temperature compensation layer 205 includes: silicon dioxide, silicon oxyfluoride or silicon oxycarbide.
Accordingly, an embodiment of the present invention further provides a surface acoustic wave resonator device, please refer to fig. 9, which includes: a piezoelectric substrate 200; an electrode structure 204 located on the piezoelectric substrate 200, wherein the electrode structure 204 includes a first metal layer 204a, a second metal layer 204b located on the first metal layer 204a, and a third metal layer 204c located on the second metal layer 204b, and a material density of the first metal layer 204a and the third metal layer 204c is greater than a material density of the second metal layer 204b; a temperature compensation layer 205 on the piezoelectric substrate 200, the temperature compensation layer 205 covering the electrode structure 204.
In this embodiment, by adding the third metal layer 204c with a higher material density, the acoustic migration phenomenon of a metal with a low material density can be effectively suppressed, and the power tolerance of the surface acoustic wave resonator device can be improved. In addition, since the thickness of the electrode structure 204 affects the resonance frequency of the saw resonator device, the thickness of the metal having a high material density affects the resonance frequency of the saw resonator more significantly than the metal having a low material density. Therefore, by additionally arranging the third metal layer 204c with higher material density, the thickness of the third metal layer 204c can be regulated and controlled in modes of ion bombardment or etching and the like, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
With continuing reference to fig. 7, in the present embodiment, the electrode structure 204 includes: the first electrode strips 2041 and the second electrode strips 2043 are disposed between the first bus 2042 and the second bus 2044 and are disposed in a staggered manner.
In this embodiment, the material of the first metal layer 204a includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
In this embodiment, the material of the second metal layer 204b includes: one or more of aluminum, copper and magnesium.
In this embodiment, the material of the third metal layer 204c includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
In this embodiment, the first metal layer 204a and the third metal layer 204c are made of the same material.
In other embodiments, the materials of the first metal layer and the third metal layer may also be different.
In this embodiment, the thickness of the first metal layer 204a is: 50 nm to 300 nm; the thickness of the second metal layer 204b is: 50 nm to 500 nm; the thickness of the third metal layer 204c is: 5 to 100 nm.
In this embodiment, the material of the temperature compensation layer 205 includes: silicon dioxide, silicon oxycarbide, or silicon oxyfluoride.
Fig. 10 to 13 are schematic structural views showing steps of a method for forming a surface acoustic wave resonator device according to another embodiment of the present invention.
This embodiment is a surface acoustic wave resonator device explained further on the basis of the surface acoustic wave resonator device in the above-described embodiment (fig. 5), and is different from the above-described embodiment in that: the method for forming the electrode structure 204 further includes: forming one or more of a first adhesion material layer between the first metal material layer 201 and the piezoelectric substrate 200, a second adhesion material layer between the first metal material layer 201 and the second metal material layer 202, and a third adhesion material layer between the second metal material layer 202 and the third metal material layer 203; and patterning one or more of the first adhesion material layer, the second adhesion material layer and the third adhesion material layer to form one or more of the corresponding first adhesion layer, second adhesion layer and third adhesion layer. The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 10, one or more of a first adhesion material layer 301, a second adhesion material layer 302 and a third adhesion material layer 303 are formed, wherein the first adhesion material layer 301 is located between the first metal material layer 201 and the piezoelectric substrate 200, the second adhesion material layer 302 is located between the first metal material layer 201 and the second metal material layer 202, and the third adhesion material layer 303 is located between the second metal material layer 202 and the third metal material layer 203.
In this embodiment, the material of the first adhesion material layer 301 includes: titanium, chromium, titanium nitride, titanium tungsten alloy or nickel chromium alloy, the material of the second adhesion material layer 302 includes: titanium, chromium, titanium nitride, titanium tungsten alloy or nickel chromium alloy, and the material of the third adhesion material layer 303 includes: titanium, chromium, titanium nitride, titanium tungsten alloy, or nickel chromium alloy.
In this embodiment, the thickness of the first adhesion material layer 301 is: 0 nm to 30 nm, the thickness of the second adhesion material layer 302 is: 0 nm to 30 nm, and the thickness of the third adhesion material layer 303 is as follows: 0 nm to 30 nm.
In the present embodiment, the first adhesion material layer 301, the second adhesion material layer 302 and the third adhesion material layer 303 are formed simultaneously.
In other embodiments, one or both of the first adhesion material layer 301, the second adhesion material layer 302, and the third adhesion material layer 303 may also be formed.
Referring to fig. 11, a thinning process is performed on the third metallic material layer 203.
In this embodiment, the thickness of the thinned third metal material layer and other process sequences of the thinning process are described with reference to the related description of fig. 6, and will not be described herein again.
Referring to fig. 12, the first metal material layer 201, the second metal material layer 202 and the third metal material layer 203 are patterned to form the electrode structure 204.
The graphical processing process further comprises the following steps: one or more of the first adhesion material layer 301, the second adhesion material layer 302 and the third adhesion material layer 303 are patterned to form one or more of a corresponding first adhesion layer, a corresponding second adhesion layer and a corresponding third adhesion layer.
In this embodiment, the first adhesion material layer 301, the second adhesion material layer 302, and the third adhesion material layer 303 are patterned.
In other embodiments, only one or two of the first adhesion material layer, the second adhesion material layer and the third adhesion material layer may be patterned.
In this embodiment, after the patterning process, the first adhesion layer 204d is formed based on the first adhesion material layer 301, the second adhesion layer 204e is formed based on the second adhesion material layer 302, and the third adhesion layer 204f is formed based on the third adhesion material layer 303. The material of the first adhesion layer 204d also includes: titanium, chromium, titanium nitride, titanium tungsten alloy, or nickel chromium alloy; the thickness of the first adhesion layer 204d is: 0 nm to 30 nm; the material of the second adhesion layer 204e also includes: titanium, chromium, titanium nitride, titanium tungsten alloy, or nickel chromium alloy; the thickness of the second adhesion layer 204e is: 0 nm to 30 nm; the material of the third adhesion layer 204f also includes: titanium, chromium, titanium nitride, titanium tungsten alloy, or nickel chromium alloy; the thickness of the third adhesion layer 204f is: 0 nm to 30 nm.
In this embodiment, the method further includes: and thinning the third metal material layer or the third metal layer. The sequence of the thinning process is described with reference to the related description of fig. 6, and will not be described herein again.
In the present embodiment, the first adhesion layer 204d is located between the first metal layer 204a and the piezoelectric substrate 200; the second adhesion layer 204e, the first metal layer 204a and the second metal layer 204b; the third adhesion layer 204f is located between the second metal layer 204b and the third metal layer 204 c.
In other embodiments, only one or two of the first, second, and third adhesive layers may be formed.
In the present embodiment, when the metal materials of the first metal layer 204a, the second metal layer 204b, and the third metal layer 204c are selected, the bonding between the metal materials or between the metal material and the piezoelectric substrate 200 is not good. Therefore, by additionally arranging the first adhesion layer 204d, the second adhesion layer 204e and the third adhesion layer 204f, the bonding property between metal layers or between the metal layers and the piezoelectric substrate 200 can be better improved, and the performance of the surface acoustic wave resonator device is further improved.
Referring to fig. 13, a temperature compensation layer 205 is formed on the piezoelectric substrate 200, and the temperature compensation layer 205 covers the electrode structure 204.
In the present embodiment, the function and material of the temperature compensation layer 205 are described with reference to the related description of fig. 9, and will not be described herein again.
Accordingly, an embodiment of the present invention further provides a surface acoustic wave resonator device, please continue to refer to fig. 13, including: a piezoelectric substrate 200; an electrode structure 204 located on the piezoelectric substrate 200, wherein the electrode structure 204 includes a first metal layer 204a, a second metal layer 204b located above the first metal layer 204a, and a third metal layer 204c located above the second metal layer 204b; the material density of the first metal layer 204a and the third metal layer 204c is greater than the material density of the second metal layer 204b; the electrode structure 204 further includes a first adhesion layer 204d between the first metal layer 204a and the piezoelectric substrate 200, a second adhesion layer 204e between the first metal layer 204a and the second metal layer 204b, and a third adhesion layer 204f between the second metal layer 204b and the third metal layer 204c; and a temperature compensation layer 205 on the piezoelectric substrate 200, the temperature compensation layer 205 covering the electrode structure 204.
In this embodiment, by adding the third metal layer 204c with a higher material density, the acoustic migration phenomenon of a metal with a low material density can be effectively suppressed, and the power tolerance of the surface acoustic wave resonator device can be improved. In addition, since the thickness of the electrode structure 204 affects the resonance frequency of the saw resonator device, the thickness of the metal having a high material density affects the resonance frequency of the saw resonator more significantly than the metal having a low material density. Therefore, by additionally arranging the third metal layer 204c with higher material density, the thickness of the third metal layer 204c can be regulated and controlled in modes of ion bombardment or etching and the like, so that the effect of accurately controlling the resonant frequency of the surface acoustic wave resonant device is achieved, and the frequency modulation mode is more flexible and controllable.
In this embodiment, the electrode structure further includes: the first adhesion layer 204d located between the first metal layer 204a and the piezoelectric substrate 200; the second adhesion layer 204e between the first metal layer 204a and the second metal layer 204b; the third adhesion layer 204f is positioned between the second metal layer 204b and the third metal layer 204 c. When the metal materials of the first metal layer 204a, the second metal layer 204b and the third metal layer 204c are selected, the bonding between some metal materials or between the metal materials and the piezoelectric substrate 200 is not good. Therefore, by additionally arranging the first adhesion layer 204d, the second adhesion layer 204e and the third adhesion layer 204f, the bonding property between metal layers or between the metal layers and the piezoelectric substrate 200 can be better improved, and the performance of the surface acoustic wave resonator device is further improved.
In other embodiments, only one or two of the first, second, and third adhesive layers may be formed.
Fig. 14 to 19 are schematic structural views showing steps of a method of forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
This embodiment is a surface acoustic wave resonator device explained further on the basis of the surface acoustic wave resonator device in the above-described embodiment (fig. 2), and is different from the above-described embodiment in that: and forming the electrode structure by adopting a stripping process. The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 14, a patterned photoresist layer 401 is formed on the piezoelectric substrate 200.
In this embodiment, the method for forming the patterned photoresist layer 401 includes: forming a patterned photoresist material layer (not shown) on the piezoelectric substrate 200; and performing patterning processing on the patterned photoresist material layer to form the patterned photoresist layer 401.
Referring to fig. 15, a first metal material layer 201 is formed on the piezoelectric substrate 200 by using the patterned photoresist layer 401 as a mask, and the first metal material layer 201 covers the exposed surface of the piezoelectric substrate 200 and the top surface of the patterned photoresist layer 401.
In this embodiment, the material and the thickness of the first metal material layer 201 are specifically described with reference to the related description of fig. 3, and will not be described herein again.
Referring to fig. 16, a second metal material layer 202 is formed on the first metal material layer 201.
In the present embodiment, the material and the thickness of the second metal material layer 202 are specifically described with reference to the related description of fig. 4, and will not be further described herein.
Referring to fig. 17, a third metal material layer 203 is formed on the second metal material layer 202.
In this embodiment, the material and the thickness of the third metal material layer 203 are specifically described with reference to the related description of fig. 6, and will not be repeated herein.
Referring to fig. 18, the third metallic material layer 203 is thinned.
In this embodiment, the thickness of the thinned third metal material layer and other process sequences of the thinning process are described with reference to the related description of fig. 6, and will not be described herein again.
Referring to fig. 19, the patterned photoresist layer 401, and the first metal material layer 201, the second metal material layer 202 and the third metal material layer 203 on the patterned photoresist layer 401 are removed to perform a lift-off process, so as to form the electrode structure 204.
In the present embodiment, please refer to the related descriptions of fig. 7 and fig. 8 for the detailed structure and function of the electrode structure 204, which will not be described herein again.
Fig. 20 to 21 are schematic diagrams showing the respective step structures of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
This embodiment is a surface acoustic wave resonator device explained further on the basis of the surface acoustic wave resonator device in the above-described embodiment (fig. 17), and is different from the above-described embodiment in that: the method for forming the electrode structure 204 further includes: one or more of a first adhesion material layer, a second adhesion material layer and a third adhesion material layer are formed, wherein the first adhesion material layer is located between the first metal material layer 201 and the piezoelectric substrate 200, the second adhesion material layer is located between the first metal material layer 201 and the second metal material layer 202, and the third adhesion material layer is located between the second metal material layer 202 and the third metal material layer 203. The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 20, one or more of a first adhesion material layer 501, a second adhesion material layer 502 and a third adhesion material layer 503 are formed, wherein the first adhesion material layer 501 is located between the first metal material layer 201 and the piezoelectric substrate 200, the second adhesion material layer 502 is located between the first metal material layer 201 and the second metal material layer 202, and the third adhesion material layer 503 is located between the second metal material layer 202 and the third metal material layer 203.
In the present embodiment, the positions where the materials and the thicknesses of the first adhesion material layer 501, the second adhesion material layer 502, and the third adhesion material layer 503 are formed are described with reference to the related description of fig. 10, and will not be described herein again.
Referring to fig. 21, the first metal material layer 201, the second metal material layer 202, the third metal material layer 203, the first adhesion material layer 501, the second adhesion material layer 502, and the third adhesion material layer 503 on the patterned photoresist layer are stripped to form the electrode structure 204.
In this embodiment, specific structures and functions of the electrode structure 204, and positions and functions of the first adhesion layer 204d, the second adhesion layer 204e, and the third adhesion layer 204f formed by the first adhesion material layer 501, the second adhesion material layer 502, and the third adhesion material layer 503 are specifically described with reference to the related description of fig. 12, and will not be repeated herein.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected by one skilled in the art without departing from the spirit and scope of the invention, as defined in the appended claims.
Claims (20)
1. A surface acoustic wave resonator device, comprising:
a piezoelectric substrate;
an electrode structure on the piezoelectric substrate, the electrode structure including a first metal layer, a second metal layer on the first metal layer, and a third metal layer on the second metal layer, the first metal layer and the third metal layer having material densities greater than that of the second metal layer;
a temperature compensation layer on the piezoelectric substrate, the temperature compensation layer covering the electrode structure.
2. A surface acoustic wave resonator device as set forth in claim 1, wherein said electrode structure further comprises: one or more of a first adhesion layer, a second adhesion layer, and a third adhesion layer, wherein the first adhesion layer is between the first metal layer and the piezoelectric substrate, the second adhesion layer is between the first metal layer and the second metal layer, and the third adhesion layer is between the second metal layer and the third metal layer.
3. A surface acoustic wave resonator device as set forth in claim 1, wherein said electrode structure includes: the electrode structure comprises a plurality of first electrode strips, a plurality of first bus bars connected with the first electrode strips, a plurality of second electrode strips and a second bus bar connected with the second electrode strips, wherein the first electrode strips and the second electrode strips are positioned between the first bus bars and the second bus bars and are arranged in a staggered mode.
4. A surface acoustic wave resonator device according to claim 1, wherein the material of said first metal layer includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
5. A surface acoustic wave resonator device according to claim 1, wherein the material of said second metal layer includes: one or more of aluminum, copper and magnesium.
6. A surface acoustic wave resonator device as set forth in claim 1, wherein the material of said third metal layer includes: one or more of molybdenum, tungsten, platinum, palladium, ruthenium, and tantalum.
7. A surface acoustic wave resonator device as set forth in claim 1, wherein said first metal layer and said third metal layer are made of the same material.
8. A surface acoustic wave resonator device as set forth in claim 1, wherein the materials of said first metal layer and said third metal layer are different.
9. A surface acoustic wave resonator device according to claim 2, wherein the material of said first adhesion layer comprises: titanium, chromium, titanium nitride, titanium tungsten alloy or nickel chromium alloy, and the material of the second adhesion layer comprises: titanium, chromium, titanium nitride, titanium tungsten alloy or nickel chromium alloy, and the material of the third adhesion layer comprises: titanium, chromium, titanium nitride, titanium tungsten alloy, or nickel chromium alloy.
10. A surface acoustic wave resonator device as set forth in claim 1, wherein the thickness of said first metal layer is: 50 nm to 300 nm; the thickness of the second metal layer is as follows: 50 nm to 500 nm; the thickness of the third metal layer is as follows: 5 nm to 100 nm.
11. A surface acoustic wave resonator device according to claim 2, wherein the thickness of said first adhesion layer is: 0 nm to 30 nm, wherein the thickness of the second adhesion layer is as follows: 0 nm to 30 nm, wherein the thickness of the third adhesion layer is as follows: 0 nm to 30 nm.
12. A method of forming a surface acoustic wave resonator device, comprising:
providing a piezoelectric substrate;
forming an electrode structure on the piezoelectric substrate, wherein the electrode structure comprises a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer, and the material density of the first metal layer and the material density of the third metal layer are greater than that of the second metal layer;
and forming a temperature compensation layer on the piezoelectric substrate, wherein the temperature compensation layer covers the electrode structure.
13. A method of forming a surface acoustic wave resonator device according to claim 12, wherein said electrode structure forming method comprises: forming a first metal material layer on the piezoelectric substrate; forming a second metal material layer on the first metal material layer; forming a third metal material layer on the second metal material layer; and carrying out graphic processing on the first metal material layer, the second metal material layer and the third metal material layer to form the electrode structure.
14. A method of forming a surface acoustic wave resonator device as set forth in claim 13, wherein after forming said third metal material layer and before said patterning process, further comprising: and thinning the third metal material layer.
15. A method of forming a surface acoustic wave resonator device, as set forth in claim 13, further comprising, after forming said electrode structure: and thinning the third metal layer.
16. A method of forming a surface acoustic wave resonator device according to claim 12, wherein said electrode structure forming method comprises: forming a graphical photoresist layer on the piezoelectric substrate; forming a first metal material layer on the piezoelectric substrate by taking the graphical photoresist layer as a mask, wherein the first metal material layer covers the exposed surface of the piezoelectric substrate and the top surface of the graphical photoresist layer; forming a second metal material layer on the first metal material layer; forming a third metal material layer on the second metal material layer; and removing the patterned photoresist layer, and carrying out stripping treatment on the first metal material layer, the second metal material layer and the third metal material layer positioned on the patterned photoresist layer to form the electrode structure.
17. A method for forming a surface acoustic wave resonator device as claimed in claim 16, further comprising, after forming said third metal material layer and before said lift-off process: and thinning the third metal material layer.
18. A method of forming a surface acoustic wave resonator device as set forth in claim 16, further comprising, after forming said electrode structure: and thinning the third metal layer.
19. A method of forming a surface acoustic wave resonator device according to claim 13 or 16, wherein said electrode structure forming method further comprises: forming one or more of a first adhesion material layer, a second adhesion material layer and a third adhesion material layer, wherein the first adhesion material layer is positioned between the first metal material layer and the piezoelectric substrate, the second adhesion material layer is positioned between the first metal material layer and the second metal material layer, and the third adhesion material layer is positioned between the second metal material layer and the third metal material layer; and patterning one or more of the first adhesion material layer, the second adhesion material layer and the third adhesion material layer to form one or more of the corresponding first adhesion layer, second adhesion layer and third adhesion layer.
20. A method of forming a surface acoustic wave resonator device as set forth in claim 12, wherein said electrode structure forming method further includes: the first electrode strips and the first bus bar connected with the first electrode strips form a plurality of second electrode strips and a second bus bar connected with the second electrode strips, and the first electrode strips and the second electrode strips are positioned between the first bus bar and the second bus bar and are arranged in a staggered mode.
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| CN114553171A (en) * | 2022-01-25 | 2022-05-27 | 北京中科飞鸿科技股份有限公司 | Electrode structure of surface acoustic wave device and manufacturing method thereof |
| CN115085688A (en) * | 2022-06-15 | 2022-09-20 | 常州承芯半导体有限公司 | Surface acoustic wave resonance device, forming method, filtering device and radio frequency front end device |
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