CN115639142A - Method for testing adhesion between different metal film layers based on grid cutting method - Google Patents
Method for testing adhesion between different metal film layers based on grid cutting method Download PDFInfo
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- CN115639142A CN115639142A CN202211325676.9A CN202211325676A CN115639142A CN 115639142 A CN115639142 A CN 115639142A CN 202211325676 A CN202211325676 A CN 202211325676A CN 115639142 A CN115639142 A CN 115639142A
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Abstract
The application discloses a method for testing adhesion between different metal film layers based on a grid cutting method. The method comprises the following steps: the method comprises the steps of sequentially depositing a first metal film and a second metal film made of two different metal materials on the surface of a pretreated wafer by using a metal film deposition process, further coating a photoresist film on the surface of the wafer, carrying out patterning operation on the surface of the wafer by using a photoetching process to enable the photoresist film to be changed into a plurality of square lattices, etching the surface of the wafer by using a metal reverse etching process, removing the second metal film exposed on the surface of the wafer, removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer, then drying the wafer by spinning, attaching the adhesive tape to the surface of the wafer, and tearing the adhesive tape in a preset direction with the surface of the wafer, so that the surface of the wafer after being torn is observed by using a microscope or a magnifier, and judging the adhesive force between the films according to the metal falling condition. And the accuracy of the method for testing the adhesive force between the metal films is further improved.
Description
Technical Field
The application relates to the technical field of semiconductor processing, in particular to a method for testing adhesion between different metal film layers based on a grid cutting method.
Background
The metal thin film occupies an important position in the structure of the semiconductor device, and the performance of the device in terms of electricity or reliability is deeply influenced. Because of the particularity of each metal, for example, ti metal is often used as a barrier metal of gold half-contact, and Al metal has excellent conductivity, the method of interconnecting multiple layers of metals to realize the device function is the mainstream direction of the semiconductor process design at present. However, in the device production process, contamination during the processing process, metal stress mismatch and other problems can cause peeling between different metal film layers, which can cause more serious device problems. Therefore, testing the adhesion of different metal films is an important process control item in the metal film process.
In the related art, the cross-cut method is widely applied to actual production in various methods for testing the adhesion between metal films. And the key point of the implementation of the check method is as follows: the continuous upper metal film layer is cut into regular square grids with regular edges without cutting the lower metal film layer. At present, the general method is to use special cutter equipment to mechanically cut the thin film layer, and the operation is simple and easy to realize. However, this presents two problems, firstly, the edge of the metal square cut by the knife tends to curl, which is more pronounced in softer and tougher metals. In response to this problem, it has been shown that hot cutting can be used to avoid metal curling from cold cutting, such as laser cutting, however, the metal after laser radiation cutting is easily melted and cooled to adhere to the underlying substrate. Both phenomena can cause that the test result can not feed back the real adhesive force between the film layers; second, mechanical cutting does not allow precise control of the actual thickness of the metal film cut. Generally, for films below 20um thickness, mechanical cutting cannot control the cut thickness.
Therefore, the accuracy of the existing method for testing the adhesion between the metal films is low.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the problems, the application provides a method for testing the adhesive force between different metal films based on a cross-cut method, which can solve the technical problem of low accuracy of the method for testing the adhesive force between the metal films.
In one embodiment, a cross-hatch method based method for testing adhesion between different metal films comprises the following steps:
s1: sequentially depositing a first metal film and a second metal film of two different metal materials on the surface of the pretreated wafer by using a metal film deposition process;
s2: coating a photoresist film on the surface of the wafer, and carrying out patterning operation on the surface of the wafer by utilizing a photoetching process to enable the photoresist film to become a plurality of square lattices;
s3: etching the surface of the wafer by using a metal reverse etching process, and removing the second metal film exposed on the surface of the wafer;
s4: removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer and then drying the wafer;
s5: adhering the wafer surface by using an adhesive tape, and tearing the adhesive tape in a preset direction with the wafer surface;
s6: observing the surface of the torn wafer by using a microscope or a magnifier, and judging the adhesive force between the film layers according to the metal falling condition;
in one embodiment, the pretreatment of the wafer comprises:
and (3) carrying out ultrasonic cleaning for 10-20 minutes by adopting an HF solution with the concentration of less than 5% to remove dust contamination on the surface of the wafer.
In one embodiment, the deposition method is physical vapor deposition or chemical vapor deposition, wherein the film thickness of the first metal film and the second metal film is less than 20um.
In one embodiment, the size of the square grid is 1mm square grid, and the distance between adjacent grids is less than 0.1mm.
In one embodiment, the metal reverse etching adopts a dry etching process or a wet etching process, and the setting of the process parameters depends on the type and the thickness of the metal.
In one embodiment, the removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer and then spin-drying includes:
in an oxygen atmosphere of 100-150 ℃, high voltage ionizes oxygen, and active groups of the oxygen react with a photoresist film to remove the oxygen, the process time is 1-3min, and the high voltage range is 3-5 kv.
In one embodiment, the removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer and then spin-drying includes:
the wafer can be put into an acetone solution with the purity of 80% -90% for 10min-20min and then taken out, cleaned and dried.
In one embodiment, the attaching the tape to the surface of the wafer and tearing the tape in a predetermined direction from the surface of the wafer includes:
attaching an adhesive tape to the metal surface of the wafer in parallel to the grids, enabling the middle part of the adhesive tape to cover the metal grids with the transverse and vertical directions of 10 multiplied by 10, wiping the adhesive tape with force by using an eraser to enable the adhesive tape to be well contacted with the metal surface of the wafer, then grabbing one end of the adhesive tape, tearing the adhesive tape at an included angle of 50-70 degrees between the adhesive tape and the metal surface of the wafer within 0.5s-1s, and keeping the adhesive tape, wherein the adhesive force of the adhesive tape is more than 45g/mm, the width of the adhesive tape is more than 25mm, and the length of the adhesive tape is more than 70mm.
In one embodiment, the observing the surface of the wafer after the tearing by using a microscope and determining the adhesion force between the film layers according to the metal falling condition includes:
judging the condition that the metal film layers of the small square grids with the transverse and vertical lengths of 10 multiplied by 10 attached to the middle of the original adhesive tape on the wafer fall off by using a microscope or a magnifier, and further judging the adhesive force grade between the two metal films according to the preset adhesive force grade of the film layers;
wherein, the preset film adhesion grade and the corresponding metal film shedding condition are as follows:
the case of peeling off the metal film layer of 5B grade is: the edges of all the metal lattices do not have any shedding phenomenon;
the case of shedding of the 4B grade metal film layer is: the edge of the metal lattice has a shedding phenomenon, and the shedding area is less than 5 percent;
the case of peeling off the metal film layer of the 3B grade is as follows: the edge of the metal lattice has a shedding phenomenon, and the shedding area is 5-15%;
the case of peeling off the metal film layer of the 2B grade is as follows: the edges of the metal grids have large pieces of shedding phenomenon or partial grids are shed in a whole block. The falling area is 15-35%;
the condition of peeling off the metal film layer of the 1B grade is as follows: the edges of the metal grids fall off in a large area or some grids fall off partially or completely, and the falling area is 35% -65%.
Has the beneficial effects that: compared with the prior art, the technical scheme of the invention has the following beneficial technical effects:
the method comprises the steps of sequentially depositing a first metal film and a second metal film made of two different metal materials on the surface of a pretreated wafer by using a metal film deposition process, further coating a photoresist film on the surface of the wafer, carrying out patterning operation on the surface of the wafer by using a photoetching process to enable the photoresist film to be changed into a plurality of square lattices, etching the surface of the wafer by using a metal reverse etching process, removing the second metal film exposed on the surface of the wafer, removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer, then carrying out spin-drying on the wafer, attaching the surface of the wafer by using an adhesive tape, and tearing the adhesive tape in a preset direction with the surface of the wafer, so that the surface of the wafer after being torn is observed by using a microscope or a magnifier, and judging the adhesive force between the films according to the metal falling condition. Therefore, the metal film is accurately cut by adopting the photoetching and metal reverse etching processes, the cut metal film is regular in size, and the film layer edge is clear and smooth, so that the accuracy of the method for testing the adhesive force between the metal films is improved, and compared with a mechanical cutting mode, the method is lower in process cost and test cost.
Drawings
FIG. 1 is a schematic flow chart of a method for testing adhesion between different metal films based on a cross-hatch method in one embodiment.
FIG. 2 is an elevation view of a wafer structure after a patterning operation on the wafer surface, in one embodiment.
FIG. 3 is a top view of a wafer structure after patterning the surface of the wafer in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.
In one embodiment, the method for testing adhesion between different metal films based on the cross-hatch method as shown in fig. 1 provides a method for testing adhesion between different metal films based on the cross-hatch method, comprising the following steps:
s1: and sequentially depositing a first metal film and a second metal film of two different metal materials on the surface of the pretreated wafer by using a metal film deposition process.
Wherein, the metal materials of the first metal film and the second metal film are different.
It should be understood that the metal materials of the first metal film and the second metal film can be selected according to actual test requirements.
In one embodiment, the pretreatment of the wafer comprises:
and (3) ultrasonic cleaning is carried out for 10-20 minutes by adopting an HF solution with the concentration of less than 5% to remove dust contamination on the surface of the wafer.
In one embodiment, the deposition method is physical vapor deposition or chemical vapor deposition, wherein the film thickness of the first metal film and the second metal film is less than 20um.
S2: coating a photoresist film on the surface of the wafer, and carrying out patterning operation on the surface of the wafer by utilizing a photoetching process so as to change the photoresist film into a plurality of square lattices.
After the patterning operation is performed on the surface of the wafer by using the photolithography process, the structure of the wafer is as shown in fig. 2 and 3, and includes: the wafer 10, the first metal film 20, the second metal film 30 and the photoresist film are formed into a plurality of square lattices 40 by photolithography.
It should be understood that the wafer surface may be the surface of the outermost layer of the wafer, such as: the wafer surface refers to the surface of the second metal thin film 30 before the photoresist film is applied, and the wafer surface is the surface of the photoresist film after the photoresist film is applied.
The patterning operation may be an operation of exposing, developing, or the like to make the resist film into a lattice shape.
In one embodiment, the square grid has a size of 1mm square grid, and the spacing between adjacent grids is less than 0.1mm.
S3: and etching the surface of the wafer by using a metal reverse etching process, and removing the second metal film exposed on the surface of the wafer.
In one embodiment, the metal back etching adopts a dry etching process or a wet etching process, and the setting of the process parameters depends on the type and the thickness of the metal.
S4: removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer and then drying the wafer.
In one embodiment, removing the photoresist film on the surface of the wafer by an organic solvent or oxygen plasma process, cleaning the wafer and then spin-drying, comprises:
in the oxygen atmosphere of 100-150 ℃, oxygen is ionized at high voltage and removed by utilizing the reaction of active groups of the oxygen and the photoresist film, and the process time is 1-3min.
In one embodiment, removing the photoresist film on the surface of the wafer by an organic solvent or oxygen plasma process, cleaning the wafer and then spin-drying, comprises:
the wafer can be put into an acetone solution with the purity of 80-90 percent for 10-20 min and then taken out, cleaned and dried.
S5: the tape is attached to the surface of the wafer and is torn in a predetermined direction from the surface of the wafer.
In one embodiment, a tape is attached to a surface of a wafer and is torn in a predetermined direction with respect to the surface of the wafer, the tape includes:
adhering an adhesive tape to the metal surface of the wafer in parallel to the grids, enabling the middle part of the adhesive tape to cover the metal grids with the transverse and vertical directions of 10 multiplied by 10, wiping the adhesive tape with force by using an eraser to enable the adhesive tape to be well contacted with the metal surface of the wafer, then grabbing one end of the adhesive tape, tearing the adhesive tape at an included angle of 50-70 degrees between the adhesive tape and the metal surface of the wafer within 0.5s-1s, and keeping the adhesive tape, wherein the adhesive force of the adhesive tape is larger than 45g/mm, the width of the adhesive tape is larger than 25mm, and the length of the adhesive tape is larger than 70mm.
S6: and observing the surface of the torn wafer by using a microscope or a magnifier, and judging the adhesive force between the film layers according to the metal falling condition.
In one embodiment, observing the surface of the torn wafer by using a microscope, and determining the adhesion between the film layers according to the metal falling condition comprises:
and judging the condition that the metal film layers of the small square grids with the transverse and vertical lengths of 10 multiplied by 10 attached to the middle of the original adhesive tape on the wafer fall off by using a microscope or a magnifier, and further judging the adhesive force grade between the two metal films according to the preset adhesive force grade of the film layers.
The preset film adhesion grade and the corresponding metal film falling condition are as follows:
the case of peeling off the metal film layer of grade 5B is as follows: the edges of all the metal lattices do not have any shedding phenomenon; the case of peeling off the metal film layer of the 4B grade is as follows: the edge of the metal lattice has a shedding phenomenon, and the shedding area is less than 5 percent; the case of peeling off the metal film layer of the 3B grade is as follows: the edge of the metal lattice has a shedding phenomenon, and the shedding area is 5 to 15 percent; the case of peeling off the metal film layer of the 2B grade is as follows: the edges of the metal grids have large pieces of shedding phenomenon or partial grids are shed in a whole block. The falling area is 15-35%; the condition of peeling off the metal film layer of the 1B grade is as follows: the edges of the metal grids fall off in a large area or some grids fall off partially or completely, and the falling area is 35% -65%.
In one embodiment, observing the surface of the torn wafer by using a microscope, and determining the adhesion between the film layers according to the metal falling-off condition comprises:
judging the condition that the metal film layers of the small square grids with the transverse and vertical lengths of 10 multiplied by 10 attached to the middle of the original adhesive tape on the wafer fall off by using a microscope or a magnifier, and further judging the adhesive force grade between the two metal films according to the preset adhesive force grade of the film layers;
the preset film adhesion grade and the corresponding metal film falling condition are as follows:
the case of peeling off the metal film layer of 5B grade is: the edges of all the metal lattices do not have any shedding phenomenon;
the case of shedding of the 4B grade metal film layer is: the edge of the metal lattice has a shedding phenomenon, and the shedding area is less than 5 percent;
the case of peeling off the metal film layer of the 3B grade is as follows: the edge of the metal lattice has a shedding phenomenon, and the shedding area is 5 to 15 percent;
the case of peeling off the metal film layer of the 2B grade is as follows: the edges of the metal grids have large pieces of shedding phenomenon or partial grids are shed in a whole block. The falling area is 15-35%;
the condition of peeling off the metal film layer of the 1B grade is as follows: the edges of the metal grids fall off in a large area or some grids fall off partially or completely, and the falling area is 35% -65%.
According to the method for testing the adhesive force between different metal film layers based on the cross-cut method, a first metal film and a second metal film made of two different metal materials are sequentially deposited on the surface of a wafer after pretreatment through a metal film deposition process, a photoresist film is further coated on the surface of the wafer, the surface of the wafer is subjected to patterning operation through a photoetching process, the photoresist film is changed into a plurality of square lattices, the surface of the wafer is etched through a metal reverse etching process, the exposed second metal film on the surface of the wafer is removed, the photoresist film on the surface of the wafer is removed through an organic solvent or oxygen plasma process, the wafer is cleaned and then dried, the wafer is attached to the surface of the wafer through an adhesive tape, the adhesive tape in a preset direction with the surface of the wafer is torn through a microscope or a magnifying glass, and the adhesive force between the film layers is judged according to the metal falling-off condition. Therefore, the metal film is accurately cut by adopting the photoetching and metal reverse etching processes, the cut metal film is regular in size, and the film layer edge is clear and smooth, so that the accuracy of the method for testing the adhesive force between the metal films is improved, and compared with a mechanical cutting mode, the method is lower in process cost and test cost.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 1 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performance of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (9)
1. A method for testing adhesion between different metal film layers based on a cross-hatch method is characterized by comprising the following steps:
s1: sequentially depositing a first metal film and a second metal film of two different metal materials on the surface of the pretreated wafer by using a metal film deposition process;
s2: coating a photoresist film on the surface of the wafer, and carrying out patterning operation on the surface of the wafer by utilizing a photoetching process to enable the photoresist film to become a plurality of square lattices;
s3: etching the surface of the wafer by using a metal reverse etching process, and removing the second metal film exposed on the surface of the wafer;
s4: removing the photoresist film on the surface of the wafer by using an organic solvent or an oxygen plasma process, cleaning the wafer and then drying the wafer;
s5: adhering the wafer surface by using an adhesive tape, and tearing the adhesive tape in a preset direction with the wafer surface;
s6: observing the surface of the torn wafer by using a microscope or a magnifier, and judging the adhesive force between the film layers according to the metal falling condition.
2. The method for testing the adhesion between different metal films based on the cross-hatch method as claimed in claim 1, wherein the pretreatment mode of the wafer comprises:
and (3) ultrasonically cleaning the wafer for 10 to 20 minutes by adopting an HF solution with the concentration of lower than 5 percent to remove dust contamination on the surface of the wafer.
3. The method for testing the adhesion between different metal films based on the cross-hatch method as claimed in claim 1, wherein the deposition method is physical vapor deposition or chemical vapor deposition, and the thickness of the first metal film and the second metal film is less than 20um.
4. The method for testing the adhesion between different metal films based on the cross-hatch method as claimed in claim 1, wherein the size of the square lattice is 1mm square lattice, and the distance between adjacent lattices is less than 0.1mm.
5. The method for testing the adhesion force between different metal film layers based on the cross-hatch method as claimed in claim 1, wherein the metal back etching adopts a dry etching process or a wet etching process, and the setting of the process parameters depends on the type and thickness of the metal.
6. The method for testing the adhesion between different metal films based on the cross-hatch method as claimed in claim 1, wherein the removing the photoresist film on the wafer surface by using an organic solvent or an oxygen plasma process, cleaning the wafer and then spin-drying comprises:
in the oxygen atmosphere of 100-150 ℃, oxygen is ionized at high voltage and removed by utilizing the reaction of active groups of the oxygen and the photoresist film, and the process time is 1-3min.
7. The method for testing the adhesion force between different metal films based on the cross-hatch method as claimed in claim 1, wherein the removing the photoresist film on the surface of the wafer by an organic solvent or oxygen plasma process, cleaning the wafer and then spin-drying comprises:
the wafer can be placed in an acetone solution with the purity of 80% -90% for 10min-20min and then taken out, cleaned and dried.
8. The method for testing the adhesion between different metal films based on the cross-hatch method as claimed in claim 1, wherein the tearing tape attached to the wafer surface by the tape and having a predetermined direction with the wafer surface comprises:
adhering an adhesive tape to the metal surface of the wafer in parallel to the grids, covering the middle part of the adhesive tape with 10 multiplied by 10 metal grids in transverse and vertical directions, wiping the adhesive tape by using an eraser to enable the adhesive tape to be in contact with the metal surface of the wafer, then grabbing one end of the adhesive tape, tearing the adhesive tape at an included angle of 50-70 degrees between the adhesive tape and the metal surface of the wafer within 0.5s-1s, and keeping the adhesive tape, wherein the adhesive force of the adhesive tape is more than 45g/mm, the width of the adhesive tape is more than 25mm, and the length of the adhesive tape is more than 70mm.
9. The method for testing the adhesion between different metal films based on the cross-hatch method as claimed in claim 1, wherein the step of observing the surface of the wafer after tearing by using a microscope and determining the adhesion between the films according to the metal falling-off condition comprises the steps of:
judging the condition that the metal film layers of the small square grids with the transverse and vertical lengths of 10 multiplied by 10 attached to the middle of the original adhesive tape on the wafer fall off by using a microscope or a magnifier, and further judging the adhesive force grade between the two metal films according to the preset adhesive force grade of the film layers;
wherein, the preset film adhesion grade and the corresponding metal film shedding condition are as follows:
the case of peeling off the metal film layer of grade 5B is as follows: the edges of all the metal lattices do not have any shedding phenomenon;
the case of peeling off the metal film layer of the 4B grade is as follows: the edge of the metal lattice has a shedding phenomenon, and the shedding area is less than 5 percent;
the case of peeling off the metal film layer of the 3B grade is as follows: the edge of the metal lattice has a shedding phenomenon, and the shedding area is 5 to 15 percent;
the case of peeling off the metal film layer of the 2B grade is as follows: the edge of the metal lattice has a large-piece falling phenomenon or a part of the lattice falls off in a whole block, and the falling area is 15-35%;
the condition of peeling off the metal film layer of the 1B grade is as follows: the edges of the metal grids fall off in a large area or some grids partially or completely, and the falling area is 35% -65%.
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| CN118758852A (en) * | 2024-09-05 | 2024-10-11 | 宁德时代新能源科技股份有限公司 | Adhesion test method for adhesive surface and adhesive test piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118758852A (en) * | 2024-09-05 | 2024-10-11 | 宁德时代新能源科技股份有限公司 | Adhesion test method for adhesive surface and adhesive test piece |
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