CN115613007B - Film forming method for improving warpage - Google Patents
Film forming method for improving warpage Download PDFInfo
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- CN115613007B CN115613007B CN202211251913.1A CN202211251913A CN115613007B CN 115613007 B CN115613007 B CN 115613007B CN 202211251913 A CN202211251913 A CN 202211251913A CN 115613007 B CN115613007 B CN 115613007B
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- 238000000034 method Methods 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000012495 reaction gas Substances 0.000 claims abstract description 16
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000007669 thermal treatment Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 38
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application relates to the technical field of semiconductors. A film forming method for improving warpage is characterized in that when a film forming process is carried out by a low-pressure chemical vapor deposition furnace, an air inlet pipe is used for introducing air from the bottom of a furnace chamber, and the warpage rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low-pressure chemical vapor deposition furnace. The concentration of the reaction gas at the bottom is higher and decreases stepwise from the bottom to the top. According to the application, the air inlet pipe extends into the furnace, so that the concentration in the middle part is higher, the concentration is stepped down towards the two ends, the difference between the temperature areas is reduced, and the warping variation is reduced. The concentration of the reaction gas in each temperature zone in the furnace is changed by changing the position of the air inlet pipe, so that the temperature of each temperature zone in the furnace is influenced, and the warping of part of the positions is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a film forming method.
Background
Vertical low pressure chemical vapor deposition technology is currently used as the main deposition means for polysilicon backset. Because of the vertical furnace body, the warping variation difference caused by each part in the furnace is large, wherein the warping of the silicon wafer is large easily caused by the part position, and the yield loss is generated.
Four temperature areas with different temperatures are arranged in the vertical low-pressure chemical vapor deposition furnace from top to bottom, and an M7 layer, an M6 layer, an M5 layer, an M4 layer, an M3 layer, an M2 layer and an M1 layer for placing silicon wafers are arranged in the vertical low-pressure chemical vapor deposition furnace from bottom to top in sequence.
Through tests, the warpage change of the M7 position is significantly larger than that of the M1 position, and the main reason for the poor warpage change of each part in the furnace is as follows: the reaction cavity is of a vertical single-tube bottom air inlet structure; the requirements of customers on the film thickness and the uniformity in the product sheet can be met, but the gradient between 4 temperature areas is larger: the lower the temperature toward the BOTTOM (BOTTOM end), the more the warp (warp) increases significantly after single-side polishing (the warp increase is also in a gradient increase mode, and the larger the warp increase toward the BOTTOM end).
At present, a film forming method capable of controlling warpage of a vertical low-pressure chemical vapor deposition furnace is lacking.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a film forming method for improving warpage so as to solve at least one technical problem.
In order to achieve the above object, the present invention provides a film forming method for improving warpage, which is characterized in that when a film forming process is performed by a low pressure chemical vapor deposition furnace, an air inlet pipe is used for introducing air from the bottom of the furnace chamber, and the warpage rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low pressure chemical vapor deposition furnace.
Further preferably, seven silicon wafer placement layers are arranged in the furnace chamber from top to bottom;
The top of the air inlet pipe is positioned between the third silicon wafer placing layer and the seventh silicon wafer placing layer from top to bottom.
Further preferably, the air inlet pipe is a telescopic pipe. The length is convenient to adjust according to the requirement.
Further preferably, the air inlet pipe comprises a vertical part which is vertically arranged and is positioned in the furnace chamber;
the lateral wall of vertical portion has seted up the venthole, the aperture of venthole increases gradually from top to bottom.
Further preferably, the air inlet pipe is a pipeline made of quartz.
Further preferably, when the deposition thickness of the film forming step is 300 to 1000nm, the film forming step comprises the steps of:
Step one, cleaning a monocrystalline silicon wafer;
Putting the cleaned monocrystalline silicon wafer on a silicon boat made of SiC material for thermal processing, wherein the principle is that pure monocrystalline silicon is deposited on the back surface of the silicon wafer through thermal decomposition of SiH 4, and the monocrystalline silicon wafer is subjected to thermal treatment in the following way: before heating, putting the cleaned monocrystalline silicon wafer on a silicon boat, introducing high-purity nitrogen into the furnace while keeping the temperature for 15-25 minutes to remove air, then slowly heating the silicon boat to 500-700 ℃ and keeping the temperature for 20-60 minutes, slowly cooling, and taking out the monocrystalline silicon wafer, wherein a layer of polycrystalline silicon film is formed on the surface of the monocrystalline silicon.
In the second step, in the thermal decomposition process, silane is used as a reaction gas, a chemical vapor deposition method is adopted to deposit a polysilicon film on the monocrystalline silicon wafer after thermal oxidation treatment, and the technological parameters of depositing the polysilicon film on the monocrystalline silicon wafer after thermal oxidation treatment are as follows: the radio frequency power is 100-150W, the radio frequency is 13.56MHz, the substrate temperature is 500-700 ℃, the cavity pressure is 20-35Pa, the purity is 0.8-1.2slm of SiH 4 gas with 99.999% volume percent, and the deposition time is 20-60 minutes.
Further preferably, when the air inlet flow rate of the air inlet pipe is controlled to be 0.8-1.2slm in the film forming process, siH 4 gas is input, the time is controlled to be 20-60 minutes, and the temperature in the furnace chamber is controlled to be four temperature areas of 640+/-50 ℃ from top to bottom.
Four temperature areas are sequentially arranged in the furnace chamber from top to bottom, and the four temperature areas are a first temperature area, a second temperature area, a third temperature area and a fourth temperature area respectively;
When the input height of the air inlet pipe is 15cm from the furnace mouth, inputting a reaction gas SiH 4, wherein the temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 640 ℃, 638 ℃ and 20-60min respectively;
when the input height of the air inlet pipe is 35cm from the furnace mouth, inputting a reaction gas SiH 4, wherein the temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 645 ℃, 647 ℃ and 20-60min respectively;
When the input height of the air inlet pipe is 57cm from the furnace mouth, the reaction gas SiH 4 is input, the temperatures of the first temperature area, the second temperature area, the third temperature area and the fourth temperature area are 640 ℃, 642 ℃, 648 ℃, 651 ℃ and the reaction time is 20-60min.
The concentration of different positions in the furnace chamber tends to be consistent by changing the heights of the air inlet pipe in the furnace chamber. Thereby reducing the temperature difference at different positions in the furnace chamber to reduce the warpage change amount.
Further preferably, after film formation, the warp change rate of the silicon wafer is controlled to WARPBF to 15.
The beneficial effects are that:
the concentration of the reaction gas at the bottom is higher and decreases stepwise from the bottom to the top. According to the application, the air inlet pipe extends into the furnace, so that the concentration in the middle part is higher, the concentration is stepped down towards the two ends, the difference between the temperature areas is reduced, and the warping variation is reduced.
The concentration of the reaction gas in each temperature zone in the furnace is changed by changing the position of the air inlet pipe, so that the temperature of each temperature zone in the furnace is influenced, and the warping of part of the positions is further improved.
Drawings
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention.
Wherein: and 1 is an air inlet pipe.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1, embodiment 1 is a film forming method for improving warpage, wherein when a film forming process is performed by a low pressure chemical vapor deposition furnace, an air inlet pipe is introduced from the bottom of the furnace chamber, and the warpage rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low pressure chemical vapor deposition furnace.
Seven silicon wafer placement layers are arranged in the furnace chamber from top to bottom; the top of the air inlet pipe is positioned between the third silicon wafer placing layer and the seventh silicon wafer placing layer from top to bottom. The seven silicon wafer placing layers are a first silicon wafer placing layer, a second silicon wafer placing layer, a third silicon wafer placing layer, a fourth silicon wafer placing layer, a fifth silicon wafer placing layer, a sixth silicon wafer placing layer and a seventh silicon wafer placing layer which are arranged from top to bottom in sequence.
The air inlet pipe 1 is a telescopic pipe. The length is convenient to adjust according to the requirement.
The air inlet pipe 1 comprises a vertical part which is vertically arranged and positioned in the furnace chamber; the lateral wall of vertical portion has seted up the venthole, and the aperture of venthole increases from top to bottom.
The air inlet pipe is a pipeline made of quartz material.
When the deposition thickness of the film forming process is 300-1000nm, the film forming process comprises the following steps:
Step one, cleaning a monocrystalline silicon wafer;
Putting the cleaned monocrystalline silicon wafer on a silicon boat made of SiC material for thermal processing, wherein the principle is that pure monocrystalline silicon is deposited on the back surface of the silicon wafer through thermal decomposition of SiH 4, and the monocrystalline silicon wafer is subjected to thermal treatment in the following way: before heating, putting the cleaned monocrystalline silicon wafer on a silicon boat, introducing high-purity nitrogen into the furnace while keeping the temperature for 15-25 minutes to remove air, then slowly heating the silicon boat to 500-700 ℃ and keeping the temperature for 20-60 minutes, slowly cooling, and taking out the monocrystalline silicon wafer, wherein a layer of polycrystalline silicon film is formed on the surface of the monocrystalline silicon.
In the second step, in the thermal decomposition process, silane is used as a reaction gas, a chemical vapor deposition method is adopted to deposit a polysilicon film on the monocrystalline silicon wafer after thermal oxidation treatment, and the technological parameters of depositing the polysilicon film on the monocrystalline silicon wafer after thermal oxidation treatment are as follows: the radio frequency power is 100-150W, the radio frequency is 13.56MHz, the substrate temperature is 500-700 ℃, the cavity pressure is 20-35Pa, the purity is 0.8-1.2slm of SiH 4 gas with 99.999% volume percent, and the deposition time is 20-60 minutes.
In embodiment 2, based on embodiment 1, when the air inlet flow rate of the air inlet pipe is controlled to be 0.8-1.2slm in the film forming process, siH 4 gas is input, the time is controlled to be 20-60 minutes, and the temperature in the furnace chamber is controlled to be in four temperature areas of 640+/-50 ℃ from top to bottom.
Four temperature areas are sequentially arranged in the furnace chamber from top to bottom, and the four temperature areas are a first temperature area, a second temperature area, a third temperature area and a fourth temperature area respectively;
When the input height of the air inlet pipe is 15cm from the furnace mouth, the reaction gas SiH 4 is input, the temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 640 ℃, 638 ℃ and 20-60min respectively. At the moment, the top pipe orifice of the air inlet pipe is arranged on the seventh silicon wafer placing layer.
When the input height of the air inlet pipe is 35cm from the furnace mouth, the reaction gas SiH 4 is input, the temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 645 ℃, 647 ℃ and the reaction time is 20-60min respectively. At the moment, the top pipe orifice of the air inlet pipe is arranged on the fifth silicon wafer placing layer.
When the input height of the air inlet pipe is 57cm from the furnace mouth, the reaction gas SiH 4 is input, the temperatures of the first temperature area, the second temperature area, the third temperature area and the fourth temperature area are 640 ℃, 642 ℃, 648 ℃, 651 ℃ and the reaction time is 20-60min. At the moment, the top pipe orifice of the air inlet pipe is arranged on the third silicon wafer placing layer.
The concentration of different positions in the furnace chamber tends to be consistent by changing the heights of the air inlet pipe in the furnace chamber. Thereby reducing the temperature difference at different positions in the furnace chamber to reduce the warpage change amount.
From the furnace mouth, i.e. the bottom position of the vertical portion.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (4)
1. The film forming method for improving the warpage is characterized in that when a film forming process is carried out by a low-pressure chemical vapor deposition furnace, an air inlet pipe is used for introducing air from the bottom of a furnace chamber, and the warpage rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low-pressure chemical vapor deposition furnace;
When the deposition thickness of the film forming process is 300-1000nm, the film forming process comprises the following steps:
Step one, cleaning a monocrystalline silicon wafer;
Putting the cleaned monocrystalline silicon wafer on a silicon boat made of SiC material for thermal processing, wherein the principle is that pure monocrystalline silicon is deposited on the back surface of the silicon wafer through thermal decomposition of SiH 4, and the monocrystalline silicon wafer is subjected to thermal treatment in the following way: before heating, putting the cleaned monocrystalline silicon wafer on a silicon boat, introducing nitrogen into the furnace and keeping the temperature for 15-25 minutes for air removal, then slowly heating the silicon boat to 500-700 ℃ for 20-60 minutes, then slowly cooling, taking out the monocrystalline silicon wafer, and forming a layer of polycrystalline silicon film on the surface of the monocrystalline silicon at the moment;
in the second step, in the thermal decomposition process, silane is used as a reaction gas, a chemical vapor deposition method is adopted to deposit a polysilicon film on the monocrystalline silicon wafer after thermal oxidation treatment, and the technological parameters of depositing the polysilicon film on the monocrystalline silicon wafer after thermal oxidation treatment are as follows: the radio frequency power is 100-150W, the radio frequency is 13.56MHz, the substrate temperature is 500-700 ℃, the cavity pressure is 20-35Pa, the SiH 4 gas flow rate with the purity of 99.999 percent by volume percent is 0.8-1.2slm, and the deposition time is 20-60 minutes;
In the film forming process, when the air inlet flow of an air inlet pipe is controlled to be 0.8-1.2slm, siH 4 gas is input, the time is controlled to be 20-60 minutes, and the temperature in a furnace chamber is controlled to be in four temperature areas of 640+/-50 ℃ from top to bottom in sequence;
four temperature areas are sequentially arranged in the furnace chamber from top to bottom, and the four temperature areas are a first temperature area, a second temperature area, a third temperature area and a fourth temperature area respectively;
When the input height of the air inlet pipe is 15cm from the furnace mouth, inputting a reaction gas SiH 4, wherein the temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 640 ℃, 638 ℃ and 20-60min respectively;
when the input height of the air inlet pipe is 35cm from the furnace mouth, inputting a reaction gas SiH 4, wherein the temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 645 ℃, 647 ℃ and 20-60min respectively;
When the input height of the air inlet pipe is 57cm from the furnace mouth, the reaction gas SiH 4 is input, the temperatures of the first temperature area, the second temperature area, the third temperature area and the fourth temperature area are 640 ℃, 642 ℃, 648 ℃, 651 ℃ and the reaction time is 20-60min.
2. A film forming method for improving warpage as claimed in claim 1, wherein: the air inlet pipe comprises a vertical part which is vertically arranged and positioned in the furnace chamber;
the lateral wall of vertical portion has seted up the venthole, the aperture of venthole increases gradually from top to bottom.
3. A film forming method for improving warpage as claimed in claim 1, wherein: the air inlet pipe is a pipeline made of quartz.
4. A film forming method for improving warpage as claimed in claim 1, wherein: after film forming, the warp change rate of the silicon wafer is controlled to be WARPBF to 15.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211251913.1A CN115613007B (en) | 2022-10-13 | 2022-10-13 | Film forming method for improving warpage |
| PCT/CN2023/081612 WO2024077865A1 (en) | 2022-10-13 | 2023-03-15 | Film forming method for alleviating warping |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211251913.1A CN115613007B (en) | 2022-10-13 | 2022-10-13 | Film forming method for improving warpage |
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| CN115613007A CN115613007A (en) | 2023-01-17 |
| CN115613007B true CN115613007B (en) | 2024-10-01 |
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| CN115613007B (en) * | 2022-10-13 | 2024-10-01 | 上海中欣晶圆半导体科技有限公司 | Film forming method for improving warpage |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
| CN111270220A (en) * | 2020-03-27 | 2020-06-12 | 上海华力微电子有限公司 | Chemical vapor deposition apparatus and method of adjusting the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
| US4742020A (en) * | 1985-02-01 | 1988-05-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Multilayering process for stress accommodation in deposited polysilicon |
| JP2810533B2 (en) * | 1990-11-30 | 1998-10-15 | キヤノン株式会社 | Method and apparatus for forming deposited film |
| JP3690287B2 (en) * | 1991-07-16 | 2005-08-31 | セイコーエプソン株式会社 | Semiconductor film forming method and manufacturing method of thin film semiconductor device |
| KR940010183A (en) * | 1992-10-24 | 1994-05-24 | 황철주 | Plasma low pressure chemical vapor deposition method and apparatus therefor |
| JP3090176B2 (en) * | 1993-03-31 | 2000-09-18 | 住友大阪セメント株式会社 | Optical phase-adjusted optical device chip with warpage and optical phase adjustment |
| KR100191471B1 (en) * | 1996-10-15 | 1999-06-15 | 윤종용 | Gas supply equipment for semiconductor low-pressure chemical vapor deposition equipment |
| TW418296B (en) * | 1999-06-30 | 2001-01-11 | Koninkl Philips Electronics Nv | A low-pressure apparatus for carrying out steps in the manufacture of a device, a method of manufacturing a device making use of such an apparatus, and a pressure control valve |
| JP2001102386A (en) * | 1999-10-01 | 2001-04-13 | Toshiba Ceramics Co Ltd | Method for manufacturing semiconductor wafer |
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- 2022-10-13 CN CN202211251913.1A patent/CN115613007B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
| CN111270220A (en) * | 2020-03-27 | 2020-06-12 | 上海华力微电子有限公司 | Chemical vapor deposition apparatus and method of adjusting the same |
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| CN115613007A (en) | 2023-01-17 |
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