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CN115602638A - Electronic device and manufacturing method thereof - Google Patents

Electronic device and manufacturing method thereof Download PDF

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Publication number
CN115602638A
CN115602638A CN202210258940.5A CN202210258940A CN115602638A CN 115602638 A CN115602638 A CN 115602638A CN 202210258940 A CN202210258940 A CN 202210258940A CN 115602638 A CN115602638 A CN 115602638A
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Prior art keywords
substrate
electronic device
adhesive layer
underfill
underfill adhesive
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Chinese (zh)
Inventor
纪仁海
谢志勇
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Innolux Corp
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Innolux Display Corp
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Priority to US17/845,929 priority Critical patent/US20230009495A1/en
Priority to EP22180360.4A priority patent/EP4117025A3/en
Publication of CN115602638A publication Critical patent/CN115602638A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/54Providing fillings in containers, e.g. gas fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0362Manufacture or treatment of packages of encapsulations

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present disclosure provides an electronic device and a method for manufacturing the same. The electronic device comprises a substrate, an electronic element, an underfill layer and a protection structure. The electronic element is arranged on the substrate. At least a part of the underfill layer is disposed between the substrate and the electronic component. The thickness of the underfill layer is not greater than the height from the surface of the substrate to the upper surface of the electronic component. The protection structure is arranged on the substrate and is adjacent to the underfill adhesive layer. The electronic device and the manufacturing method thereof can effectively control the area of the underfill layer.

Description

电子装置及其制造方法Electronic device and manufacturing method thereof

技术领域technical field

本揭露涉及一种电子装置及其制造方法,尤其涉及一种可有效地控制底部填充胶层面积的电子装置及其制造方法。The present disclosure relates to an electronic device and a manufacturing method thereof, in particular to an electronic device capable of effectively controlling the area of an underfill adhesive layer and a manufacturing method thereof.

背景技术Background technique

一般来说,电子元件与基板接合(bonding)之后,会进行底部填充制程,以在电子元件与基板的接合处的外侧以喷射(jetting process)或点胶(dispensing process)的方式,让底部填充胶层通过虹吸现象进入电子元件与基板之间的空隙,以包覆接垫及焊球并固定电子元件与基板之间的相对位置。然而,底部填充胶层在基板上呈现自由流动,因而不易控制其面积,进而造成材料浪费,甚至产生电容(capacitance)/电感(inductance)/电磁干扰(electromagnetic interference)的现象。Generally speaking, after the electronic components are bonded to the substrate, an underfill process is performed to fill the underfill on the outside of the joint between the electronic components and the substrate by means of jetting process or dispensing process. The glue layer enters the gap between the electronic component and the substrate through the siphon phenomenon, so as to cover the pad and the solder ball and fix the relative position between the electronic component and the substrate. However, the underfill adhesive layer flows freely on the substrate, so it is difficult to control its area, resulting in material waste, and even capacitance/inductance/electromagnetic interference.

发明内容Contents of the invention

本揭露是针对一种电子装置及其制造方法,可有效地控制底部填充胶层的面积。The disclosure is directed to an electronic device and a manufacturing method thereof, which can effectively control the area of the underfill adhesive layer.

根据本揭露的实施例,电子装置包括基板、电子元件、底部填充胶层以及保护结构。电子元件设置于基板上。至少一部分的底部填充胶层设置于基板与电子元件之间。底部填充胶层的厚度不大于基板的表面至电子元件的上表面的高度。保护结构设置于基板上且邻近底部填充胶层。According to an embodiment of the present disclosure, an electronic device includes a substrate, an electronic component, an underfill layer, and a protection structure. The electronic components are arranged on the substrate. At least a part of the underfill glue layer is disposed between the substrate and the electronic component. The thickness of the underfill glue layer is not greater than the height from the surface of the substrate to the upper surface of the electronic component. The protection structure is disposed on the substrate and adjacent to the underfill adhesive layer.

根据本揭露的实施例,电子装置的制造方法,其包括以下步骤。提供基板。定义基板的限制区域。接合电子元件于基板上。形成底部填充胶层于基板上。According to an embodiment of the disclosure, a method for manufacturing an electronic device includes the following steps. Substrate provided. Defines the restricted area of the substrate. Bonding electronic components on the substrate. An underfill adhesive layer is formed on the substrate.

基于上述,在本揭露的实施例中,保护结构设置于基板上且邻近底部填充胶层,借此可限制底部填充胶层的范围,而使本揭露的电子装置可有效地控制底部填充胶层的面积,进而使底部填充胶层的用量及形状可具有一致性。Based on the above, in the embodiments of the present disclosure, the protection structure is disposed on the substrate and adjacent to the underfill layer, thereby limiting the range of the underfill layer, so that the electronic device of the present disclosure can effectively control the underfill layer. area, so that the amount and shape of the underfill layer can be consistent.

为让本揭露的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present disclosure more comprehensible, the following specific embodiments are described in detail with accompanying drawings.

附图说明Description of drawings

图1是本揭露的一实施例的一种电子装置的剖面示意图;FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure;

图2A是本揭露的一实施例的一种电子装置的俯视示意图;FIG. 2A is a schematic top view of an electronic device according to an embodiment of the present disclosure;

图2B是本揭露的另一实施例的一种电子装置的俯视示意图;2B is a schematic top view of an electronic device according to another embodiment of the present disclosure;

图3是本揭露的另一实施例的一种电子装置的俯视示意图;FIG. 3 is a schematic top view of an electronic device according to another embodiment of the present disclosure;

图4A至图4C是本揭露的一实施例的一种电子装置的制造方法的剖面示意图;4A to 4C are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present disclosure;

图5A至图5B是本揭露的另一实施例的一种电子装置的制造方法的局部步骤的剖面示意图;5A to 5B are schematic cross-sectional views of partial steps of a method for manufacturing an electronic device according to another embodiment of the present disclosure;

图6A至图6C是本揭露的另一实施例的一种电子装置的制造方法的剖面示意图。6A to 6C are schematic cross-sectional views of a method of manufacturing an electronic device according to another embodiment of the present disclosure.

附图标记说明Explanation of reference signs

100a、100b、100c、100d、100e、100f、100g:电子装置;100a, 100b, 100c, 100d, 100e, 100f, 100g: electronic devices;

110、110f:基板;110, 110f: substrate;

112:第一接垫;112: the first pad;

120:电子元件;120: electronic components;

121:上表面;121: upper surface;

122:第二接垫;122: the second pad;

130a、130b、130d:底部填充胶层;130a, 130b, 130d: underfill glue layer;

140a、140b、140c、140d、140g:保护结构;140a, 140b, 140c, 140d, 140g: protective structure;

142b、142c:挡墙图案;142b, 142c: retaining wall pattern;

145b、145c:开口;145b, 145c: openings;

150:焊球;150: solder ball;

160:金属层;160: metal layer;

A:限制区域;A: restricted area;

H:高度;H: height;

L:能量光束;L: energy beam;

P:钢板;P: steel plate;

R:表面粗糙结构;R: rough surface structure;

S:表面;S: surface;

T:厚度。T: Thickness.

具体实施方式detailed description

通过参考以下的详细描述并同时结合附图可以理解本揭露,须注意的是,为了使读者能容易了解及为了附图的简洁,本揭露中的多张附图只绘出电子装置的一部分,且附图中的特定元件并非依照实际比例绘图。此外,图中各元件的数量及尺寸仅作为示意,并非用来限制本揭露的范围。The present disclosure can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that, in order to facilitate readers' understanding and keep the drawings concise, several drawings in the present disclosure only depict a part of the electronic device. Also, certain elements in the drawings are not drawn to actual scale. In addition, the number and size of each component in the figure are only for illustration, and are not intended to limit the scope of the present disclosure.

本揭露通篇说明书与所附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件。本文并不意在区分那些功能相同但名称不同的元件。Certain terms will be used throughout the specification and appended claims of this disclosure to refer to particular elements. Those skilled in the art should understand that electronic device manufacturers may refer to the same element by different names. This document does not intend to distinguish between those elements that have the same function but have different names.

在下文说明书与权利要求中,“含有”与“包括”等词为开放式词语,因此其应被解释为“含有但不限定为…”之意。In the following description and claims, words such as "comprising" and "comprising" are open-ended words, so they should be interpreted as meaning "including but not limited to...".

此外,实施例中可能使用相对性的用语,例如“下方”或“底部”及“上方”或“顶部”,以描述附图的一个元件对于另一元件的相对关系。能理解的是,如果将附图的装置翻转使其上下颠倒,则所叙述在“下方”侧的元件将会成为在“上方”侧的元件。In addition, relative terms such as "below" or "bottom" and "upper" or "top" may be used in the embodiments to describe the relative relationship of one element to another element in the drawings. It will be understood that if the device in the figures is turned over so that it is upside down, elements described as being on the "lower" side would then be oriented on the "upper" side.

在本揭露一些实施例中,关于接合、连接的用语例如“连接”、“互连”等,除非特别定义,否则可指两个结构是直接接触,或者亦可指两个结构并非直接(间接)接触,其中有其它结构设于此两个结构之间。且此关于接合、连接的用语亦可包括两个结构都可移动,或者两个结构都固定的情况。此外,用语“耦合”包含两个结构之间是通过直接或间接电性连接的手段来传递能量,或是两个分离的结构之间以相互感应的手段来传递能量。In some embodiments of the present disclosure, terms such as “connected” and “interconnected” related to bonding and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not directly (indirectly). ) contact with other structures interposed between the two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed. In addition, the term "coupled" includes the direct or indirect electrical connection between two structures to transfer energy, or the mutual induction between two separate structures to transfer energy.

应了解到,当元件或膜层被称为在另一个元件或膜层“上”或“连接到”另一个元件或膜层时,它可以直接在此另一元件或膜层上或直接连接到此另一元件或膜层,或者两者之间存在有插入的元件或膜层(非直接情况)。相反地,当元件被称为“直接”在另一个元件或膜层“上”或“直接连接到”另一个元件或膜层时,两者之间不存在有插入的元件或膜层。It will be understood that when an element or film is referred to as being "on" or "connected to" another element or film, it can be directly on or directly connected to the other element or film To another element or layer, or there is an intervening element or layer between the two (indirect cases). In contrast, when an element is referred to as being “directly on” or “directly connected to” another element or layer, there are no intervening elements or layers present.

术语“大约”、“等于”、“相等”或“相同”、“实质上”或“大致上”一般解释为在所给定的值或范围的20%以内,或解释为在所给定的值或范围的10%、5%、3%、2%、1%或0.5%以内。The terms "about", "equal", "equal" or "identical", "substantially" or "substantially" are generally interpreted as being within 20% of a given value or range, or as being within 20% of a given value or range Within 10%, 5%, 3%, 2%, 1%, or 0.5% of a value or range.

如本文所使用,用语“膜(film)”和/或“层(layer)”可指任何连续或不连续的结构及材料(诸如,通过本文所揭示的方法沉积的材料)。例如,膜和/或层可包括二维材料、三维材料、纳米粒子、或甚至部分或完整分子层、或部分或完整原子层、或原子和/或分子团簇(clusters)。膜或层可包含具有针孔(pinholes)的材料或层,其可以是至少部分连续的。As used herein, the terms "film" and/or "layer" may refer to any continuous or discontinuous structure and material, such as materials deposited by the methods disclosed herein. For example, films and/or layers may comprise two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and/or molecular clusters. The film or layer may comprise a material or layer having pinholes, which may be at least partially continuous.

虽然术语第一、第二、第三…可用以描述多种组成元件,但组成元件并不以此术语为限。此术语仅用于区别说明书内单一组成元件与其他组成元件。权利要求中可不使用相同术语,而依照权利要求中元件宣告的顺序以第一、第二、第三…取代。因此,在下文说明书中,第一组成元件在权利要求中可能为第二组成元件。Although the terms first, second, third... may be used to describe various constituent elements, the constituent elements are not limited to this term. This term is only used to distinguish a single constituent element from other constituent elements in the specification. The same terms may not be used in the claims, but are replaced by first, second, third... in the order in which elements are declared in the claims. Therefore, in the following description, a first constituent element may be a second constituent element in the claims.

除非另外定义,在此使用的全部用语(包括技术及科学用语)具有与此篇揭露所属的技术人员所通常理解的相同涵义。能理解的是这些用语,例如在通常使用的字典中定义的用语,应被解读成具有一与相关技术及本揭露的背景或上下文一致的意思,而不应以一理想化或过度正式的方式解读,除非在此特别定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the related art and the present disclosure, and not in an idealized or overly formal manner Interpretation, unless specifically defined herein.

须知悉的是,以下所举实施例可以在不脱离本揭露的精神下,将数个不同实施例中的技术特征进行替换、重组、混合以完成其他实施例。It should be noted that in the following embodiments, without departing from the spirit of the present disclosure, technical features in several different embodiments may be replaced, reorganized, and mixed to complete other embodiments.

本揭露的电子装置可包括显示装置、天线装置、感测装置、发光装置、和/或拼接装置,但不以此为限。电子装置可包括可弯折或可挠式电子装置。电子装置可包括电子元件。电子元件可包括被动元件与主动元件,例如电容、电阻、电感、可变电容、滤波器、二极管(diode)、晶体管(transistors)、感应器、微机电系统元件(MEMS)、液晶芯片(liquidcrystal chip)等,但不限于此。二极管可包括发光二极管或光电二极管。发光二极管可例如包括有机发光二极管(organic light emitting diode,OLED)、次毫米发光二极管(miniLED)、微发光二极管(micro LED)、量子点发光二极管(quantum dot LED)、荧光(fluorescence)、磷光(phosphor)或其他适合的材料、或上述组合,但不以此为限。感应器可例如包括电容式感应器(capacitive sensors)、光学式感应器(optical sensors)、电磁式感应器(electromagnetic sensors)、指纹感应器(fingerprint sensor,FPS)、触控感应器(touch sensor)、天线(antenna)、或触控笔(pen sensor)等,但不限于此。下文将以显示装置作为电子装置以说明本揭露内容,但本揭露不以此为限。The electronic device of the present disclosure may include a display device, an antenna device, a sensing device, a light emitting device, and/or a splicing device, but is not limited thereto. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. Electronic components can include passive components and active components, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, inductors, MEMS, liquid crystal chips ), etc., but not limited thereto. The diodes may include light emitting diodes or photodiodes. The light emitting diodes may, for example, include organic light emitting diodes (organic light emitting diodes, OLEDs), submillimeter light emitting diodes (miniLEDs), micro light emitting diodes (micro LEDs), quantum dot light emitting diodes (quantum dot LEDs), fluorescence (fluorescence), phosphorescence ( phosphor) or other suitable materials, or a combination of the above, but not limited thereto. The sensors may, for example, include capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (fingerprint sensor, FPS), touch sensors (touch sensor) , antenna (antenna), or stylus (pen sensor), etc., but not limited thereto. In the following, a display device is used as an electronic device to illustrate the content of the disclosure, but the disclosure is not limited thereto.

现将详细地参考本揭露的示范性实施例,示范性实施例的实例说明于附图中。只要有可能,相同元件符号在附图和描述中用来表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.

图1是本揭露的一实施例的一种电子装置的剖面示意图。请参考图1,在本实施例中,电子装置100a包括基板110、电子元件120、底部填充胶层130a以及保护结构140a。电子元件120设置于基板110上。至少一部分的底部填充胶层130a设置于基板110与电子元件120之间。底部填充胶层130a的厚度T不大于基板110的表面S至电子元件120的上表面121的高度H。保护结构140a设置于基板110上且邻近底部填充胶层130a。FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Please refer to FIG. 1 , in the present embodiment, an electronic device 100 a includes a substrate 110 , an electronic component 120 , an underfill layer 130 a and a protection structure 140 a. The electronic component 120 is disposed on the substrate 110 . At least a portion of the underfill layer 130 a is disposed between the substrate 110 and the electronic component 120 . The thickness T of the underfill adhesive layer 130 a is not greater than the height H from the surface S of the substrate 110 to the upper surface 121 of the electronic component 120 . The protection structure 140a is disposed on the substrate 110 and adjacent to the underfill layer 130a.

详细来说,在本实施例中,基板110例如是玻璃基板、玻纤(FR4)基板、可挠曲塑胶基板、薄膜基板、软性基板或其他适当的基板,但不限于此。基板上可设置薄膜晶体管或其它驱动电路。基板110包括彼此分离的多个第一接垫112,其中第一接垫112可配置于基板110的表面S上,于此并不加以限制。于另一实施例中,基板表面具有凹陷部,第一接垫112亦可设置在凹陷部,此仍属于本揭露所欲保护的范围。In detail, in this embodiment, the substrate 110 is, for example, a glass substrate, a glass fiber (FR4) substrate, a flexible plastic substrate, a film substrate, a flexible substrate or other suitable substrates, but is not limited thereto. Thin film transistors or other driving circuits can be arranged on the substrate. The substrate 110 includes a plurality of first pads 112 separated from each other, wherein the first pads 112 may be disposed on the surface S of the substrate 110 , but not limited thereto. In another embodiment, the surface of the substrate has a recessed portion, and the first pad 112 may also be disposed in the recessed portion, which still belongs to the protection scope of the present disclosure.

电子元件120例如是发光二极管芯片(LED die),它可以是由硅(Si)、砷化镓(GaAs)、氮化镓(GaN)、碳化硅(SiC)、蓝宝石(Sapphire)或玻璃基板所制成的芯片,但不限于此。于另一实施例中,电子元件120亦可以是半导体封装元件,例如是球格阵列式(BallGrid Array,BGA)封装元件、芯片尺寸封装(Chip Size Package,CSP)元件、倒装芯片或2.5维/3维(2.5D/3D)半导体封装元件,但不限于此。于另一实施例中,电子元件120也可以是任何一种芯片,例如是集成电路(IC)、晶体管(transistors)、可控硅整流器、阀门(valves)、薄膜晶体管(Thin Film Transistors)、电容、电感、可变电容、滤波器、电阻、二极管、微机电系统元件(MEMS)、液晶芯片(liquid crystal chip)等,但不限于此。电子元件120包括彼此分离的多个第二接垫122,其中第一接垫112与第二接垫122通过多个焊球150而结构性且电性连接在一起。意即,本实施例的电子元件120例如是以倒装的方式接合于基板110上。The electronic component 120 is, for example, a light emitting diode chip (LED die), which may be made of silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), sapphire (Sapphire) or a glass substrate. chips made, but not limited to. In another embodiment, the electronic component 120 can also be a semiconductor package component, such as a Ball Grid Array (BGA) package component, a chip size package (Chip Size Package, CSP) component, a flip chip or a 2.5-dimensional /3-dimensional (2.5D/3D) semiconductor package components, but not limited thereto. In another embodiment, the electronic component 120 can also be any kind of chip, such as integrated circuits (ICs), transistors (transistors), silicon controlled rectifiers, valves (valves), thin film transistors (Thin Film Transistors), capacitors , inductors, variable capacitors, filters, resistors, diodes, MEMS, liquid crystal chips, etc., but not limited thereto. The electronic component 120 includes a plurality of second pads 122 separated from each other, wherein the first pad 112 and the second pad 122 are structurally and electrically connected together by a plurality of solder balls 150 . That is, the electronic component 120 of this embodiment is, for example, bonded to the substrate 110 in a flip-chip manner.

如图1所示,底部填充胶层130a设置于基板110与电子元件120之间,且覆盖第一接垫112、第二接垫122以及焊球150。底部填充胶层130a可用以增加电子元件120与基板110之间的黏着性,且可以固定第一接垫112、焊球150以及第二接垫122彼此之间的相对位置。于一实施例中,在电子装置100a例如为天线装置、感测装置的情况下,当底部填充胶层130a的厚度T不大于基板110的表面S至电子元件120的上表面121的高度H时,则可允许高频信号通过并减少高频信号的损耗。另一未示出的实施例中,若为进一步减信号损耗量,于电子元件下方处底部填充胶层的厚度可小于基板的表面至电子元件的下表面的高度。于另一未示出的实施例中,底部填充胶层亦可完全包覆电子元件,在电子元件例如为发光二极管的情况下,可使电子装置具有较佳的光型及聚光效果。As shown in FIG. 1 , the underfill adhesive layer 130 a is disposed between the substrate 110 and the electronic component 120 , and covers the first pad 112 , the second pad 122 and the solder ball 150 . The underfill adhesive layer 130 a can be used to increase the adhesion between the electronic component 120 and the substrate 110 , and can fix the relative positions of the first pad 112 , the solder ball 150 and the second pad 122 . In one embodiment, when the electronic device 100a is, for example, an antenna device or a sensing device, when the thickness T of the underfill adhesive layer 130a is not greater than the height H from the surface S of the substrate 110 to the upper surface 121 of the electronic component 120 , it can allow high-frequency signals to pass and reduce the loss of high-frequency signals. In another embodiment not shown, in order to further reduce signal loss, the thickness of the underfill adhesive layer under the electronic component may be smaller than the height from the surface of the substrate to the lower surface of the electronic component. In another not-shown embodiment, the underfill adhesive layer can also completely cover the electronic components. In the case of the electronic components such as light-emitting diodes, the electronic device can have a better light pattern and light-gathering effect.

此外,本实施例的保护结构140a的设置可在基板110上定义出限制区域A,其中保护结构140a例如是封闭性的结构,如连续性山形坝(mountain-shaped dam)或连续性挡墙(wall),可围绕底部填充胶层130a,以限制底部填充胶层130a的区域。换言之,底部填充胶层130a是被限制地位于限制区域A。于一实施例中,保护结构140a的材质可例如是有机材料,但不限于此。保护结构140a的俯视形状可例如是中空矩形,而保护结构140a的厚度可例如是1微米(μm)至100微米,但不限于此。In addition, the arrangement of the protective structure 140a in this embodiment can define a restricted area A on the substrate 110, where the protective structure 140a is, for example, a closed structure, such as a continuous mountain-shaped dam or a continuous retaining wall ( wall), can surround the underfill adhesive layer 130a to limit the area of the underfill adhesive layer 130a. In other words, the underfill layer 130a is located in the restricted area A in a restricted manner. In one embodiment, the material of the protection structure 140a may be, for example, an organic material, but is not limited thereto. The top view shape of the protection structure 140a may be, for example, a hollow rectangle, and the thickness of the protection structure 140a may be, for example, 1 micrometer (μm) to 100 μm, but is not limited thereto.

在制造上,请再参考图1,首先,提供基板110,其中基板110上包括第一接垫112。第一接垫112的材料可以是化学镍金(缩写为ENIG:Electroless nickel immersion gold)或是其它导电材料。接着,形成保护结构140a于基板110上,以定义基板110的限制区域A。接着,接合电子元件120于基板110上,其中电子元件120包括第二接垫122,且第二接垫122的材料可以是化学镍金(缩写为ENIG:Electroless nickel immersion gold)或是其它导电材料。第一接垫112与第二接垫122通过多个焊球150而结构性且电性连接在一起。须说明的是,本揭露并不限制形成保护结构140a于基板110上及接合电子元件120于基板110上的顺序。也就是说,可先形成保护结构140a于基板110上,之后再接合电子元件120于基板110上;或者是,先接合电子元件120于基板110上,之后再形成保护结构140a于基板110上。最后,形成底部填充胶层130a于基板110上,其中底部填充胶层130a设置于基板110与电子元件120之间,且覆盖第一接垫112、第二接垫122以及焊球150。至此,以完成电子装置100a的制作。In manufacturing, please refer to FIG. 1 again. Firstly, a substrate 110 is provided, wherein the substrate 110 includes first pads 112 . The material of the first pad 112 can be electroless nickel gold (abbreviated as ENIG: Electroless nickel immersion gold) or other conductive materials. Next, a protection structure 140 a is formed on the substrate 110 to define a restricted area A of the substrate 110 . Next, the electronic component 120 is bonded on the substrate 110, wherein the electronic component 120 includes a second pad 122, and the material of the second pad 122 can be electroless nickel gold (abbreviated as ENIG: Electroless nickel immersion gold) or other conductive materials . The first pad 112 and the second pad 122 are structurally and electrically connected together by a plurality of solder balls 150 . It should be noted that the present disclosure does not limit the sequence of forming the protection structure 140 a on the substrate 110 and bonding the electronic device 120 on the substrate 110 . That is to say, the protection structure 140 a can be formed on the substrate 110 first, and then the electronic component 120 is bonded on the substrate 110 ; or, the electronic component 120 is bonded on the substrate 110 first, and then the protection structure 140 a is formed on the substrate 110 . Finally, an underfill adhesive layer 130 a is formed on the substrate 110 , wherein the underfill adhesive layer 130 a is disposed between the substrate 110 and the electronic component 120 and covers the first pad 112 , the second pad 122 and the solder ball 150 . So far, the fabrication of the electronic device 100a is completed.

简言之,本实施例的保护结构140a可以限制底部填充胶层130a的面积,而使底部填充胶层130a的用量及形状具有一致性。考量应用于高频传输的电子装置100a,高频信号于电子装置100a的材料损耗需一致。也就是说,本实施例是通过设置保护结构140a,来调整/限制底部填充胶层130a的用量,使本实施例的电子装置100a可有效地控制底部填充胶层130a的面积。In short, the protection structure 140a of this embodiment can limit the area of the underfill adhesive layer 130a, so that the amount and shape of the underfill adhesive layer 130a are consistent. Considering the application of the electronic device 100a in high-frequency transmission, the material loss of the high-frequency signal in the electronic device 100a needs to be consistent. That is to say, in this embodiment, the amount of the underfill adhesive layer 130a is adjusted/limited by providing the protective structure 140a, so that the electronic device 100a of this embodiment can effectively control the area of the underfill adhesive layer 130a.

在此须说明的是,下述实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并省略相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。It should be noted here that the following embodiments use the component numbers and partial content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

图2A是本揭露的一实施例的一种电子装置的俯视示意图。请同时参考图1与图2A,电子装置100b与图1的电子装置100a相似,两者的差异在于:在本实施例中,考虑到均匀性,保护结构140b可以是非封闭性的结构。详细来说,本实施例的保护结构140b具有多个开口145b(示意地示出二个开口145b),且包括彼此分离的多个挡墙图案142b(示意地示出二个挡墙图案142b)。挡墙图案142b的尺寸可相同,且可呈镜射结构,但不以此为限。开口145b位于挡墙图案142b之间,其中开口145b的形状例如是矩形,而部分底部填充胶层130b延伸至开口145b内。开口145b的设计除了可容置溢胶之外,亦具有排气的功能,可排除存在于底部填充胶层130b内的空气。FIG. 2A is a schematic top view of an electronic device according to an embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 2A at the same time. The electronic device 100b is similar to the electronic device 100a in FIG. 1 . The difference between them is that in this embodiment, the protection structure 140b may be a non-enclosed structure in consideration of uniformity. In detail, the protective structure 140b of this embodiment has a plurality of openings 145b (two openings 145b are schematically shown), and includes a plurality of retaining wall patterns 142b (two retaining wall patterns 142b are schematically shown) separated from each other. . The size of the retaining wall pattern 142b may be the same, and may be a mirror image structure, but not limited thereto. The opening 145b is located between the retaining wall patterns 142b, wherein the shape of the opening 145b is, for example, a rectangle, and part of the underfill adhesive layer 130b extends into the opening 145b. The design of the opening 145b not only accommodates overflowing glue, but also has the function of venting, which can remove the air existing in the underfill glue layer 130b.

图2B是本揭露的另一实施例的一种电子装置的俯视示意图。请同时参考图2A与图2B,电子装置100c与图2A的电子装置100b相似,两者的差异在于:在本实施例中,保护结构140c具有四个开口145c,且包括彼此分离的四个挡墙图案142c。挡墙图案142c的尺寸可相同,其中四个挡墙图案142c排列成例如是卐,但不以此为限。开口145c位于挡墙图案142c之间,其中开口145c的口径由邻近底部填充胶层130b往远离底部填充胶层130b的方向逐渐变大而呈现例如是梯形,而部分底部填充胶层130b延伸至开口145c内。开口145c的设计除了可容置溢胶之外,亦具有排气的功能,可排除存在于底部填充胶层130b内的空气。FIG. 2B is a schematic top view of an electronic device according to another embodiment of the present disclosure. Please refer to FIG. 2A and FIG. 2B at the same time. The electronic device 100c is similar to the electronic device 100b in FIG. Wall pattern 142c. The size of the retaining wall patterns 142c can be the same, and the four retaining wall patterns 142c are arranged in a swastika shape, but not limited thereto. The opening 145c is located between the retaining wall patterns 142c, wherein the diameter of the opening 145c gradually increases from the direction adjacent to the underfill layer 130b to the direction away from the underfill layer 130b, such as a trapezoidal shape, and part of the underfill layer 130b extends to the opening. Within 145c. The design of the opening 145c not only accommodates overflowing glue, but also has the function of venting, which can remove the air existing in the underfill glue layer 130b.

于另一未示出的实施例中,考虑到润湿条件(wetting conditions),保护结构的多个挡墙图案亦可具有不同尺寸,或者是,这些挡墙图案的形状亦可不相同且不对称,此仍属于本揭露所欲保护的范围。In another not-shown embodiment, considering the wetting conditions, the plurality of retaining wall patterns of the protective structure may also have different sizes, or the shapes of these retaining wall patterns may also be different and asymmetrical. , which still belongs to the scope of protection intended by this disclosure.

图3是本揭露的另一实施例的一种电子装置的俯视示意图。请同时参考图1与图3,电子装置100d与图1的电子装置100a相似,两者的差异在于:在本实施例中,当保护结构140d的厚度不足时,电子装置100d还包括金属层160,设置于基板110上且位于保护结构140d与基板110之间,以避免底部填充胶层130d溢出。于一实施例中,保护结构140d于基板110上的正投影完全重叠于金属层160在基板110上的正投影,其中金属层160在基板110上的正投影小于保护结构140d于基板110上的正投影,但不以此为限。FIG. 3 is a schematic top view of an electronic device according to another embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 3 at the same time. The electronic device 100d is similar to the electronic device 100a in FIG. , disposed on the substrate 110 and between the protection structure 140d and the substrate 110 to prevent the underfill adhesive layer 130d from overflowing. In one embodiment, the orthographic projection of the protective structure 140d on the substrate 110 completely overlaps the orthographic projection of the metal layer 160 on the substrate 110, wherein the orthographic projection of the metal layer 160 on the substrate 110 is smaller than the orthographic projection of the protective structure 140d on the substrate 110. Orthographic projection, but not limited to.

图4A至图4C是本揭露的一实施例的一种电子装置的制造方法的剖面示意图。首先,请参考图4A,提供基板110,其中基板110上包括第一接垫112。接着,接合电子元件120于基板110上,其中电子元件120包括第二接垫122,且第一接垫112与第二接垫122通过焊球150而结构性且电性连接在一起。接着,配置钢板P于基板110的部分表面S上,其中钢板P环绕电子元件120的周围。接着,以能量光束L来照射暴露于钢板P外的电子元件120与基板110。此处,能量光束L例如是极紫外光(Extreme Ultra Violet,EUV)或等离子(Plasma),可有效地降低基板110的接触角(contact angle),以增加后续底部填充胶层130a(请参考图4C)的润湿性。之后,请参考图4B,移除钢板P而于基板110上定义出限制区域A。也就是说,本实施例定义基板110的限制区域A的步骤是以能量光束L来处理基板110的表面S,以对基板110的部分区域(即限制区域A)进行表面改质。最后,请同时参考图4B与图4C,形成底部填充胶层130a于基板110上,其中底部填充胶层130a可容易地通过虹吸现象而流到限制区域A,以覆盖第一接垫112、第二接垫122以及焊球150,而底部填充胶层130a不会流到未进行表面改质的区域(即限制区域A之外的区域)。至此,已完成电子装置100e的制作。4A to 4C are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present disclosure. First, please refer to FIG. 4A , a substrate 110 is provided, wherein the substrate 110 includes first pads 112 . Next, the electronic component 120 is bonded on the substrate 110 , wherein the electronic component 120 includes the second pad 122 , and the first pad 112 and the second pad 122 are structurally and electrically connected together through the solder ball 150 . Next, a steel plate P is disposed on a part of the surface S of the substrate 110 , wherein the steel plate P surrounds the electronic component 120 . Next, the electronic components 120 and the substrate 110 exposed outside the steel plate P are irradiated with the energy beam L. Referring to FIG. Here, the energy beam L is, for example, extreme ultraviolet light (Extreme Ultra Violet, EUV) or plasma (Plasma), which can effectively reduce the contact angle of the substrate 110 (contact angle), so as to increase the subsequent underfill glue layer 130a (please refer to FIG. 4C) wettability. After that, referring to FIG. 4B , the steel plate P is removed to define a restricted area A on the substrate 110 . That is to say, the step of defining the restricted area A of the substrate 110 in this embodiment is to process the surface S of the substrate 110 with the energy beam L to modify the surface of a partial area of the substrate 110 (ie, the restricted area A). Finally, please refer to FIG. 4B and FIG. 4C at the same time, forming the underfill adhesive layer 130a on the substrate 110, wherein the underfill adhesive layer 130a can easily flow to the restricted area A through the siphon phenomenon to cover the first pad 112, the second pad 112 The two pads 122 and the solder balls 150, and the underfill adhesive layer 130a will not flow to the area without surface modification (ie, the area outside the restricted area A). So far, the fabrication of the electronic device 100e has been completed.

图5A至图5B是本揭露的另一实施例的一种电子装置的制造方法的局部步骤的剖面示意图。首先,请参考图5A,提供基板110f,其中基板110f上包括第一接垫112。接着,以光刻胶(Photoresist)覆盖部分基板110f。接着,以等离子、喷砂(Sandblasting)或蚀刻(etching)的方式,对基板110f进行表面处理,以在基板110f没有覆盖光刻胶的区域形成表面粗糙结构R,而定义出基板110f的限制区域A。之后,移除光刻胶,且接合电子元件120于基板110f上,其中电子元件120包括第二接垫122,且第一接垫112与第二接垫122通过焊球150而结构性且电性连接在一起。最后,请同时参考图5A与图5B,形成底部填充胶层130a于基板110f上,其中底部填充胶层130a可容易地通过虹吸现象而流到限制区域A,以覆盖第一接垫112、第二接垫122以及焊球150而固化,而底部填充胶层130a不会流到表面粗糙结构R上。至此,已完成电子装置100f的制作。5A to 5B are schematic cross-sectional views of partial steps of a method for manufacturing an electronic device according to another embodiment of the present disclosure. First, please refer to FIG. 5A , a substrate 110f is provided, wherein the substrate 110f includes first pads 112 . Next, a part of the substrate 110f is covered with a photoresist. Next, the substrate 110f is subjected to surface treatment by means of plasma, sandblasting (Sandblasting) or etching (etching), so as to form a surface roughness structure R in the region of the substrate 110f not covered with photoresist, thereby defining a restricted region of the substrate 110f a. After that, the photoresist is removed, and the electronic component 120 is bonded on the substrate 110f, wherein the electronic component 120 includes the second pad 122, and the first pad 112 and the second pad 122 are structurally and electrically connected by the solder ball 150 connected sexually. Finally, please refer to FIG. 5A and FIG. 5B at the same time, an underfill adhesive layer 130a is formed on the substrate 110f, wherein the underfill adhesive layer 130a can easily flow to the restricted area A through the siphon phenomenon to cover the first pad 112, the second The two pads 122 and the solder balls 150 are solidified, and the underfill adhesive layer 130 a will not flow onto the surface roughness R. So far, the fabrication of the electronic device 100f has been completed.

由于粗糙度较高时,底部填充胶层130a不会被湿润,因此可通过在不需要底部填充胶层130a的区域进行表面粗糙化,来限制底部填充胶层130a的流动范围,而达到控制底部填充胶层130a的面积。Since the underfill adhesive layer 130a will not be wetted when the roughness is high, the flow range of the underfill adhesive layer 130a can be limited by roughening the surface in the area where the underfill adhesive layer 130a is not needed, so as to control the underfill adhesive layer 130a. Fill the area of the glue layer 130a.

于另一未示出的实施例中,亦可通过彼此分离的多个微结构来取代表面粗糙结构R。详细来说,首先,提供基板。接着,以光刻胶覆盖部分基板,并通过光刻工艺等步骤来制作微结构,而定义出基板的限制区域。之后,接合电子元件于基板上。最后,形成底部填充胶层于基板上,其中底部填充胶层可容易地通过虹吸现象而流到限制区域而固化,而底部填充胶层不会流到微结构上。至此,已完成电子装置的制作。In another embodiment not shown, the rough surface structure R may also be replaced by a plurality of microstructures separated from each other. Specifically, first, a substrate is provided. Then, a part of the substrate is covered with photoresist, and a microstructure is fabricated through steps such as a photolithography process, so as to define a restricted area of the substrate. After that, the electronic components are bonded on the substrate. Finally, an underfill adhesive layer is formed on the substrate, wherein the underfill adhesive layer can easily flow to the restricted area through a siphon phenomenon to be cured, and the underfill adhesive layer cannot flow onto the microstructure. So far, the fabrication of the electronic device has been completed.

图6A至图6C是本揭露的另一实施例的一种电子装置的制造方法的剖面示意图。首先,请参考图6A,提供基板110,其中基板110上包括第一接垫112。接着,以丝网印刷法(screen printing)涂布含氟物质于基板110上。接着,烘干含氟物质,使基板110的表面S与含氟物质脱水产生Si-O键,而形成具有疏水性的保护结构140g,并以保护结构140g定义出基板110的限制区域A。接着,请参考图6B,接合电子元件120于基板110上,其中电子元件120包括第二接垫122,且第一接垫112与第二接垫122通过焊球150而结构性且电性连接在一起。最后,请同时参考图6B与图6C,形成底部填充胶层130a于基板110上,其中底部填充胶层130a可容易地通过虹吸现象而流到限制区域A,以覆盖第一接垫112、第二接垫122以及焊球150而固化,而底部填充胶层130a不会流到保护结构140g上。至此,已完成电子装置100g的制作。6A to 6C are schematic cross-sectional views of a method of manufacturing an electronic device according to another embodiment of the present disclosure. First, please refer to FIG. 6A , a substrate 110 is provided, wherein the substrate 110 includes first pads 112 . Next, the fluorine-containing substance is coated on the substrate 110 by screen printing. Next, the fluorine-containing substance is dried to dehydrate the surface S of the substrate 110 and the fluorine-containing substance to generate Si-O bonds, thereby forming a hydrophobic protective structure 140g, and defining the restricted area A of the substrate 110 with the protective structure 140g. Next, please refer to FIG. 6B , the electronic component 120 is bonded on the substrate 110, wherein the electronic component 120 includes the second pad 122, and the first pad 112 and the second pad 122 are structurally and electrically connected by solder balls 150. together. Finally, referring to FIG. 6B and FIG. 6C at the same time, an underfill adhesive layer 130a is formed on the substrate 110, wherein the underfill adhesive layer 130a can easily flow to the restricted area A through the siphon phenomenon to cover the first pad 112, the second The two pads 122 and the solder balls 150 are cured, and the underfill adhesive layer 130a does not flow onto the protection structure 140g. So far, the fabrication of the electronic device 100g has been completed.

由于在基板110的表面S上涂覆含氟物质,而形成具有疏水性的保护结构140g,使底部填充胶层130a不会被保护结构140g润湿,借此来限制底部填充胶层130a的流动范围,而达到控制底部填充胶层130a的面积。Since the surface S of the substrate 110 is coated with a fluorine-containing substance, a hydrophobic protective structure 140g is formed, so that the underfill adhesive layer 130a will not be wetted by the protective structure 140g, thereby restricting the flow of the underfill adhesive layer 130a range, so as to control the area of the underfill layer 130a.

于另一未示出的实施例中,亦可通过聚合物(pollymer),例如是氟碳聚合物(Fluorocarbon polymer),来取代含氟物质。详细来说,首先,提供基板。接着,以八氟环丁烷(Octafluorocyclobutane,C4F8)来作为反应气体,在室温下通过电感耦合等离子体化学气相沉积(ICP-CVD)在基板上形成氟碳聚合物薄膜,其中氟碳聚合物薄膜整面性地覆盖基板的表面。接着,以光刻法来图案化氟碳聚合物薄膜,而形成具有疏水性的保护结构,并定义出基板的限制区域。也就是说,除了降低表面能的氟碳链之外,硅烷还可用于形成疏水表面。之后,接合电子元件于基板上。最后,形成底部填充胶层于基板上,其中底部填充胶层可容易地通过虹吸现象而流到限制区域中而固化,而底部填充胶层不会流到保护结构上。至此,已完成电子装置的制作。In another embodiment not shown, the fluorine-containing substance can also be replaced by a polymer (pollymer), such as a fluorocarbon polymer. Specifically, first, a substrate is provided. Next, using Octafluorocyclobutane (C 4 F 8 ) as a reactive gas, a fluorocarbon polymer film was formed on the substrate by inductively coupled plasma chemical vapor deposition (ICP-CVD) at room temperature, in which fluorocarbon The polymer film covers the entire surface of the substrate. Then, the fluorocarbon polymer film is patterned by photolithography to form a hydrophobic protection structure and define the restricted area of the substrate. That is, in addition to fluorocarbon chains that lower the surface energy, silanes can also be used to form hydrophobic surfaces. After that, the electronic components are bonded on the substrate. Finally, an underfill adhesive layer is formed on the substrate, wherein the underfill adhesive layer can easily flow into the restricted area through a siphon phenomenon to be cured, and the underfill adhesive layer cannot flow onto the protection structure. So far, the fabrication of the electronic device has been completed.

综上所述,在本揭露的实施例中,保护结构设置于基板上且邻近底部填充胶层,借此可限制底部填充胶层的范围,而使本揭露的电子装置可有效地控制底部填充胶层的面积,进而使底部填充胶层的用量及形状可具有一致性。To sum up, in the embodiments of the present disclosure, the protection structure is disposed on the substrate and adjacent to the underfill adhesive layer, thereby limiting the scope of the underfill adhesive layer, so that the electronic device of the present disclosure can effectively control the underfill. The area of the adhesive layer, and thus the amount and shape of the underfill adhesive layer can be consistent.

最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (10)

1.一种电子装置,其特征在于,包括:1. An electronic device, characterized in that, comprising: 基板;Substrate; 电子元件,设置于所述基板上;electronic components arranged on the substrate; 底部填充胶层,至少一部分的所述底部填充胶层设置于所述基板与所述电子元件之间,其中所述底部填充胶层的厚度不大于所述基板的表面至所述电子元件的上表面的高度;以及An underfill adhesive layer, at least a part of the underfill adhesive layer is disposed between the substrate and the electronic component, wherein the thickness of the underfill adhesive layer is not greater than the surface of the substrate to the top of the electronic component the height of the surface; and 保护结构,设置于所述基板上且邻近所述底部填充胶层。The protection structure is disposed on the substrate and adjacent to the underfill adhesive layer. 2.根据权利要求1所述的电子装置,其特征在于,所述保护结构围绕所述底部填充胶层。2. The electronic device according to claim 1, wherein the protection structure surrounds the underfill layer. 3.根据权利要求1所述的电子装置,其特征在于,所述保护结构包括多个挡墙图案。3. The electronic device according to claim 1, wherein the protection structure comprises a plurality of retaining wall patterns. 4.根据权利要求1所述的电子装置,其特征在于,所述保护结构包括含氟物质。4. The electronic device according to claim 1, wherein the protective structure comprises a fluorine-containing substance. 5.根据权利要求1所述的电子装置,其特征在于,所述保护结构包括聚合物。5. The electronic device of claim 1, wherein the protective structure comprises a polymer. 6.根据权利要求5所述的电子装置,其特征在于,所述保护结构包括氟碳聚合物。6. The electronic device of claim 5, wherein the protective structure comprises a fluorocarbon polymer. 7.根据权利要求1所述的电子装置,其特征在于,还包括:7. The electronic device according to claim 1, further comprising: 金属层,设置于所述基板上且位于所述保护结构与所述基板之间。The metal layer is disposed on the substrate and located between the protection structure and the substrate. 8.一种电子装置的制造方法,其特征在于,包括:8. A method of manufacturing an electronic device, comprising: 提供基板;Provide the substrate; 定义所述基板的限制区域;defining a confinement area of said substrate; 接合电子元件于所述基板上;以及bonding electronic components on the substrate; and 形成底部填充胶层于所述基板上,其中所述底部填充胶层的厚度不大于所述基板的表面至所述电子元件的上表面的高度。An underfill adhesive layer is formed on the substrate, wherein the thickness of the underfill adhesive layer is not greater than the height from the surface of the substrate to the upper surface of the electronic component. 9.根据权利要求8所述的电子装置的制造方法,其特征在于,定义所述基板的所述限制区域的步骤是形成保护结构于所述基板上。9 . The method of manufacturing an electronic device according to claim 8 , wherein the step of defining the restricted area of the substrate is forming a protection structure on the substrate. 10.根据权利要求8所述的电子装置的制造方法,其特征在于,定义所述基板的所述限制区域的步骤是处理所述基板的所述表面。10 . The method of manufacturing an electronic device according to claim 8 , wherein the step of defining the restricted area of the substrate is processing the surface of the substrate. 11 .
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