CN115602638A - Electronic device and manufacturing method thereof - Google Patents
Electronic device and manufacturing method thereof Download PDFInfo
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- CN115602638A CN115602638A CN202210258940.5A CN202210258940A CN115602638A CN 115602638 A CN115602638 A CN 115602638A CN 202210258940 A CN202210258940 A CN 202210258940A CN 115602638 A CN115602638 A CN 115602638A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 239000012790 adhesive layer Substances 0.000 claims abstract description 53
- 239000010410 layer Substances 0.000 claims abstract description 40
- 230000001681 protective effect Effects 0.000 claims description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229920002313 fluoropolymer Polymers 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 239000003292 glue Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000000470 constituent Substances 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
技术领域technical field
本揭露涉及一种电子装置及其制造方法,尤其涉及一种可有效地控制底部填充胶层面积的电子装置及其制造方法。The present disclosure relates to an electronic device and a manufacturing method thereof, in particular to an electronic device capable of effectively controlling the area of an underfill adhesive layer and a manufacturing method thereof.
背景技术Background technique
一般来说,电子元件与基板接合(bonding)之后,会进行底部填充制程,以在电子元件与基板的接合处的外侧以喷射(jetting process)或点胶(dispensing process)的方式,让底部填充胶层通过虹吸现象进入电子元件与基板之间的空隙,以包覆接垫及焊球并固定电子元件与基板之间的相对位置。然而,底部填充胶层在基板上呈现自由流动,因而不易控制其面积,进而造成材料浪费,甚至产生电容(capacitance)/电感(inductance)/电磁干扰(electromagnetic interference)的现象。Generally speaking, after the electronic components are bonded to the substrate, an underfill process is performed to fill the underfill on the outside of the joint between the electronic components and the substrate by means of jetting process or dispensing process. The glue layer enters the gap between the electronic component and the substrate through the siphon phenomenon, so as to cover the pad and the solder ball and fix the relative position between the electronic component and the substrate. However, the underfill adhesive layer flows freely on the substrate, so it is difficult to control its area, resulting in material waste, and even capacitance/inductance/electromagnetic interference.
发明内容Contents of the invention
本揭露是针对一种电子装置及其制造方法,可有效地控制底部填充胶层的面积。The disclosure is directed to an electronic device and a manufacturing method thereof, which can effectively control the area of the underfill adhesive layer.
根据本揭露的实施例,电子装置包括基板、电子元件、底部填充胶层以及保护结构。电子元件设置于基板上。至少一部分的底部填充胶层设置于基板与电子元件之间。底部填充胶层的厚度不大于基板的表面至电子元件的上表面的高度。保护结构设置于基板上且邻近底部填充胶层。According to an embodiment of the present disclosure, an electronic device includes a substrate, an electronic component, an underfill layer, and a protection structure. The electronic components are arranged on the substrate. At least a part of the underfill glue layer is disposed between the substrate and the electronic component. The thickness of the underfill glue layer is not greater than the height from the surface of the substrate to the upper surface of the electronic component. The protection structure is disposed on the substrate and adjacent to the underfill adhesive layer.
根据本揭露的实施例,电子装置的制造方法,其包括以下步骤。提供基板。定义基板的限制区域。接合电子元件于基板上。形成底部填充胶层于基板上。According to an embodiment of the disclosure, a method for manufacturing an electronic device includes the following steps. Substrate provided. Defines the restricted area of the substrate. Bonding electronic components on the substrate. An underfill adhesive layer is formed on the substrate.
基于上述,在本揭露的实施例中,保护结构设置于基板上且邻近底部填充胶层,借此可限制底部填充胶层的范围,而使本揭露的电子装置可有效地控制底部填充胶层的面积,进而使底部填充胶层的用量及形状可具有一致性。Based on the above, in the embodiments of the present disclosure, the protection structure is disposed on the substrate and adjacent to the underfill layer, thereby limiting the range of the underfill layer, so that the electronic device of the present disclosure can effectively control the underfill layer. area, so that the amount and shape of the underfill layer can be consistent.
为让本揭露的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present disclosure more comprehensible, the following specific embodiments are described in detail with accompanying drawings.
附图说明Description of drawings
图1是本揭露的一实施例的一种电子装置的剖面示意图;FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure;
图2A是本揭露的一实施例的一种电子装置的俯视示意图;FIG. 2A is a schematic top view of an electronic device according to an embodiment of the present disclosure;
图2B是本揭露的另一实施例的一种电子装置的俯视示意图;2B is a schematic top view of an electronic device according to another embodiment of the present disclosure;
图3是本揭露的另一实施例的一种电子装置的俯视示意图;FIG. 3 is a schematic top view of an electronic device according to another embodiment of the present disclosure;
图4A至图4C是本揭露的一实施例的一种电子装置的制造方法的剖面示意图;4A to 4C are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present disclosure;
图5A至图5B是本揭露的另一实施例的一种电子装置的制造方法的局部步骤的剖面示意图;5A to 5B are schematic cross-sectional views of partial steps of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
图6A至图6C是本揭露的另一实施例的一种电子装置的制造方法的剖面示意图。6A to 6C are schematic cross-sectional views of a method of manufacturing an electronic device according to another embodiment of the present disclosure.
附图标记说明Explanation of reference signs
100a、100b、100c、100d、100e、100f、100g:电子装置;100a, 100b, 100c, 100d, 100e, 100f, 100g: electronic devices;
110、110f:基板;110, 110f: substrate;
112:第一接垫;112: the first pad;
120:电子元件;120: electronic components;
121:上表面;121: upper surface;
122:第二接垫;122: the second pad;
130a、130b、130d:底部填充胶层;130a, 130b, 130d: underfill glue layer;
140a、140b、140c、140d、140g:保护结构;140a, 140b, 140c, 140d, 140g: protective structure;
142b、142c:挡墙图案;142b, 142c: retaining wall pattern;
145b、145c:开口;145b, 145c: openings;
150:焊球;150: solder ball;
160:金属层;160: metal layer;
A:限制区域;A: restricted area;
H:高度;H: height;
L:能量光束;L: energy beam;
P:钢板;P: steel plate;
R:表面粗糙结构;R: rough surface structure;
S:表面;S: surface;
T:厚度。T: Thickness.
具体实施方式detailed description
通过参考以下的详细描述并同时结合附图可以理解本揭露,须注意的是,为了使读者能容易了解及为了附图的简洁,本揭露中的多张附图只绘出电子装置的一部分,且附图中的特定元件并非依照实际比例绘图。此外,图中各元件的数量及尺寸仅作为示意,并非用来限制本揭露的范围。The present disclosure can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that, in order to facilitate readers' understanding and keep the drawings concise, several drawings in the present disclosure only depict a part of the electronic device. Also, certain elements in the drawings are not drawn to actual scale. In addition, the number and size of each component in the figure are only for illustration, and are not intended to limit the scope of the present disclosure.
本揭露通篇说明书与所附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件。本文并不意在区分那些功能相同但名称不同的元件。Certain terms will be used throughout the specification and appended claims of this disclosure to refer to particular elements. Those skilled in the art should understand that electronic device manufacturers may refer to the same element by different names. This document does not intend to distinguish between those elements that have the same function but have different names.
在下文说明书与权利要求中,“含有”与“包括”等词为开放式词语,因此其应被解释为“含有但不限定为…”之意。In the following description and claims, words such as "comprising" and "comprising" are open-ended words, so they should be interpreted as meaning "including but not limited to...".
此外,实施例中可能使用相对性的用语,例如“下方”或“底部”及“上方”或“顶部”,以描述附图的一个元件对于另一元件的相对关系。能理解的是,如果将附图的装置翻转使其上下颠倒,则所叙述在“下方”侧的元件将会成为在“上方”侧的元件。In addition, relative terms such as "below" or "bottom" and "upper" or "top" may be used in the embodiments to describe the relative relationship of one element to another element in the drawings. It will be understood that if the device in the figures is turned over so that it is upside down, elements described as being on the "lower" side would then be oriented on the "upper" side.
在本揭露一些实施例中,关于接合、连接的用语例如“连接”、“互连”等,除非特别定义,否则可指两个结构是直接接触,或者亦可指两个结构并非直接(间接)接触,其中有其它结构设于此两个结构之间。且此关于接合、连接的用语亦可包括两个结构都可移动,或者两个结构都固定的情况。此外,用语“耦合”包含两个结构之间是通过直接或间接电性连接的手段来传递能量,或是两个分离的结构之间以相互感应的手段来传递能量。In some embodiments of the present disclosure, terms such as “connected” and “interconnected” related to bonding and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not directly (indirectly). ) contact with other structures interposed between the two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed. In addition, the term "coupled" includes the direct or indirect electrical connection between two structures to transfer energy, or the mutual induction between two separate structures to transfer energy.
应了解到,当元件或膜层被称为在另一个元件或膜层“上”或“连接到”另一个元件或膜层时,它可以直接在此另一元件或膜层上或直接连接到此另一元件或膜层,或者两者之间存在有插入的元件或膜层(非直接情况)。相反地,当元件被称为“直接”在另一个元件或膜层“上”或“直接连接到”另一个元件或膜层时,两者之间不存在有插入的元件或膜层。It will be understood that when an element or film is referred to as being "on" or "connected to" another element or film, it can be directly on or directly connected to the other element or film To another element or layer, or there is an intervening element or layer between the two (indirect cases). In contrast, when an element is referred to as being “directly on” or “directly connected to” another element or layer, there are no intervening elements or layers present.
术语“大约”、“等于”、“相等”或“相同”、“实质上”或“大致上”一般解释为在所给定的值或范围的20%以内,或解释为在所给定的值或范围的10%、5%、3%、2%、1%或0.5%以内。The terms "about", "equal", "equal" or "identical", "substantially" or "substantially" are generally interpreted as being within 20% of a given value or range, or as being within 20% of a given value or range Within 10%, 5%, 3%, 2%, 1%, or 0.5% of a value or range.
如本文所使用,用语“膜(film)”和/或“层(layer)”可指任何连续或不连续的结构及材料(诸如,通过本文所揭示的方法沉积的材料)。例如,膜和/或层可包括二维材料、三维材料、纳米粒子、或甚至部分或完整分子层、或部分或完整原子层、或原子和/或分子团簇(clusters)。膜或层可包含具有针孔(pinholes)的材料或层,其可以是至少部分连续的。As used herein, the terms "film" and/or "layer" may refer to any continuous or discontinuous structure and material, such as materials deposited by the methods disclosed herein. For example, films and/or layers may comprise two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and/or molecular clusters. The film or layer may comprise a material or layer having pinholes, which may be at least partially continuous.
虽然术语第一、第二、第三…可用以描述多种组成元件,但组成元件并不以此术语为限。此术语仅用于区别说明书内单一组成元件与其他组成元件。权利要求中可不使用相同术语,而依照权利要求中元件宣告的顺序以第一、第二、第三…取代。因此,在下文说明书中,第一组成元件在权利要求中可能为第二组成元件。Although the terms first, second, third... may be used to describe various constituent elements, the constituent elements are not limited to this term. This term is only used to distinguish a single constituent element from other constituent elements in the specification. The same terms may not be used in the claims, but are replaced by first, second, third... in the order in which elements are declared in the claims. Therefore, in the following description, a first constituent element may be a second constituent element in the claims.
除非另外定义,在此使用的全部用语(包括技术及科学用语)具有与此篇揭露所属的技术人员所通常理解的相同涵义。能理解的是这些用语,例如在通常使用的字典中定义的用语,应被解读成具有一与相关技术及本揭露的背景或上下文一致的意思,而不应以一理想化或过度正式的方式解读,除非在此特别定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the related art and the present disclosure, and not in an idealized or overly formal manner Interpretation, unless specifically defined herein.
须知悉的是,以下所举实施例可以在不脱离本揭露的精神下,将数个不同实施例中的技术特征进行替换、重组、混合以完成其他实施例。It should be noted that in the following embodiments, without departing from the spirit of the present disclosure, technical features in several different embodiments may be replaced, reorganized, and mixed to complete other embodiments.
本揭露的电子装置可包括显示装置、天线装置、感测装置、发光装置、和/或拼接装置,但不以此为限。电子装置可包括可弯折或可挠式电子装置。电子装置可包括电子元件。电子元件可包括被动元件与主动元件,例如电容、电阻、电感、可变电容、滤波器、二极管(diode)、晶体管(transistors)、感应器、微机电系统元件(MEMS)、液晶芯片(liquidcrystal chip)等,但不限于此。二极管可包括发光二极管或光电二极管。发光二极管可例如包括有机发光二极管(organic light emitting diode,OLED)、次毫米发光二极管(miniLED)、微发光二极管(micro LED)、量子点发光二极管(quantum dot LED)、荧光(fluorescence)、磷光(phosphor)或其他适合的材料、或上述组合,但不以此为限。感应器可例如包括电容式感应器(capacitive sensors)、光学式感应器(optical sensors)、电磁式感应器(electromagnetic sensors)、指纹感应器(fingerprint sensor,FPS)、触控感应器(touch sensor)、天线(antenna)、或触控笔(pen sensor)等,但不限于此。下文将以显示装置作为电子装置以说明本揭露内容,但本揭露不以此为限。The electronic device of the present disclosure may include a display device, an antenna device, a sensing device, a light emitting device, and/or a splicing device, but is not limited thereto. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. Electronic components can include passive components and active components, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, inductors, MEMS, liquid crystal chips ), etc., but not limited thereto. The diodes may include light emitting diodes or photodiodes. The light emitting diodes may, for example, include organic light emitting diodes (organic light emitting diodes, OLEDs), submillimeter light emitting diodes (miniLEDs), micro light emitting diodes (micro LEDs), quantum dot light emitting diodes (quantum dot LEDs), fluorescence (fluorescence), phosphorescence ( phosphor) or other suitable materials, or a combination of the above, but not limited thereto. The sensors may, for example, include capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (fingerprint sensor, FPS), touch sensors (touch sensor) , antenna (antenna), or stylus (pen sensor), etc., but not limited thereto. In the following, a display device is used as an electronic device to illustrate the content of the disclosure, but the disclosure is not limited thereto.
现将详细地参考本揭露的示范性实施例,示范性实施例的实例说明于附图中。只要有可能,相同元件符号在附图和描述中用来表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.
图1是本揭露的一实施例的一种电子装置的剖面示意图。请参考图1,在本实施例中,电子装置100a包括基板110、电子元件120、底部填充胶层130a以及保护结构140a。电子元件120设置于基板110上。至少一部分的底部填充胶层130a设置于基板110与电子元件120之间。底部填充胶层130a的厚度T不大于基板110的表面S至电子元件120的上表面121的高度H。保护结构140a设置于基板110上且邻近底部填充胶层130a。FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Please refer to FIG. 1 , in the present embodiment, an
详细来说,在本实施例中,基板110例如是玻璃基板、玻纤(FR4)基板、可挠曲塑胶基板、薄膜基板、软性基板或其他适当的基板,但不限于此。基板上可设置薄膜晶体管或其它驱动电路。基板110包括彼此分离的多个第一接垫112,其中第一接垫112可配置于基板110的表面S上,于此并不加以限制。于另一实施例中,基板表面具有凹陷部,第一接垫112亦可设置在凹陷部,此仍属于本揭露所欲保护的范围。In detail, in this embodiment, the
电子元件120例如是发光二极管芯片(LED die),它可以是由硅(Si)、砷化镓(GaAs)、氮化镓(GaN)、碳化硅(SiC)、蓝宝石(Sapphire)或玻璃基板所制成的芯片,但不限于此。于另一实施例中,电子元件120亦可以是半导体封装元件,例如是球格阵列式(BallGrid Array,BGA)封装元件、芯片尺寸封装(Chip Size Package,CSP)元件、倒装芯片或2.5维/3维(2.5D/3D)半导体封装元件,但不限于此。于另一实施例中,电子元件120也可以是任何一种芯片,例如是集成电路(IC)、晶体管(transistors)、可控硅整流器、阀门(valves)、薄膜晶体管(Thin Film Transistors)、电容、电感、可变电容、滤波器、电阻、二极管、微机电系统元件(MEMS)、液晶芯片(liquid crystal chip)等,但不限于此。电子元件120包括彼此分离的多个第二接垫122,其中第一接垫112与第二接垫122通过多个焊球150而结构性且电性连接在一起。意即,本实施例的电子元件120例如是以倒装的方式接合于基板110上。The
如图1所示,底部填充胶层130a设置于基板110与电子元件120之间,且覆盖第一接垫112、第二接垫122以及焊球150。底部填充胶层130a可用以增加电子元件120与基板110之间的黏着性,且可以固定第一接垫112、焊球150以及第二接垫122彼此之间的相对位置。于一实施例中,在电子装置100a例如为天线装置、感测装置的情况下,当底部填充胶层130a的厚度T不大于基板110的表面S至电子元件120的上表面121的高度H时,则可允许高频信号通过并减少高频信号的损耗。另一未示出的实施例中,若为进一步减信号损耗量,于电子元件下方处底部填充胶层的厚度可小于基板的表面至电子元件的下表面的高度。于另一未示出的实施例中,底部填充胶层亦可完全包覆电子元件,在电子元件例如为发光二极管的情况下,可使电子装置具有较佳的光型及聚光效果。As shown in FIG. 1 , the
此外,本实施例的保护结构140a的设置可在基板110上定义出限制区域A,其中保护结构140a例如是封闭性的结构,如连续性山形坝(mountain-shaped dam)或连续性挡墙(wall),可围绕底部填充胶层130a,以限制底部填充胶层130a的区域。换言之,底部填充胶层130a是被限制地位于限制区域A。于一实施例中,保护结构140a的材质可例如是有机材料,但不限于此。保护结构140a的俯视形状可例如是中空矩形,而保护结构140a的厚度可例如是1微米(μm)至100微米,但不限于此。In addition, the arrangement of the
在制造上,请再参考图1,首先,提供基板110,其中基板110上包括第一接垫112。第一接垫112的材料可以是化学镍金(缩写为ENIG:Electroless nickel immersion gold)或是其它导电材料。接着,形成保护结构140a于基板110上,以定义基板110的限制区域A。接着,接合电子元件120于基板110上,其中电子元件120包括第二接垫122,且第二接垫122的材料可以是化学镍金(缩写为ENIG:Electroless nickel immersion gold)或是其它导电材料。第一接垫112与第二接垫122通过多个焊球150而结构性且电性连接在一起。须说明的是,本揭露并不限制形成保护结构140a于基板110上及接合电子元件120于基板110上的顺序。也就是说,可先形成保护结构140a于基板110上,之后再接合电子元件120于基板110上;或者是,先接合电子元件120于基板110上,之后再形成保护结构140a于基板110上。最后,形成底部填充胶层130a于基板110上,其中底部填充胶层130a设置于基板110与电子元件120之间,且覆盖第一接垫112、第二接垫122以及焊球150。至此,以完成电子装置100a的制作。In manufacturing, please refer to FIG. 1 again. Firstly, a
简言之,本实施例的保护结构140a可以限制底部填充胶层130a的面积,而使底部填充胶层130a的用量及形状具有一致性。考量应用于高频传输的电子装置100a,高频信号于电子装置100a的材料损耗需一致。也就是说,本实施例是通过设置保护结构140a,来调整/限制底部填充胶层130a的用量,使本实施例的电子装置100a可有效地控制底部填充胶层130a的面积。In short, the
在此须说明的是,下述实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并省略相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。It should be noted here that the following embodiments use the component numbers and partial content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
图2A是本揭露的一实施例的一种电子装置的俯视示意图。请同时参考图1与图2A,电子装置100b与图1的电子装置100a相似,两者的差异在于:在本实施例中,考虑到均匀性,保护结构140b可以是非封闭性的结构。详细来说,本实施例的保护结构140b具有多个开口145b(示意地示出二个开口145b),且包括彼此分离的多个挡墙图案142b(示意地示出二个挡墙图案142b)。挡墙图案142b的尺寸可相同,且可呈镜射结构,但不以此为限。开口145b位于挡墙图案142b之间,其中开口145b的形状例如是矩形,而部分底部填充胶层130b延伸至开口145b内。开口145b的设计除了可容置溢胶之外,亦具有排气的功能,可排除存在于底部填充胶层130b内的空气。FIG. 2A is a schematic top view of an electronic device according to an embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 2A at the same time. The
图2B是本揭露的另一实施例的一种电子装置的俯视示意图。请同时参考图2A与图2B,电子装置100c与图2A的电子装置100b相似,两者的差异在于:在本实施例中,保护结构140c具有四个开口145c,且包括彼此分离的四个挡墙图案142c。挡墙图案142c的尺寸可相同,其中四个挡墙图案142c排列成例如是卐,但不以此为限。开口145c位于挡墙图案142c之间,其中开口145c的口径由邻近底部填充胶层130b往远离底部填充胶层130b的方向逐渐变大而呈现例如是梯形,而部分底部填充胶层130b延伸至开口145c内。开口145c的设计除了可容置溢胶之外,亦具有排气的功能,可排除存在于底部填充胶层130b内的空气。FIG. 2B is a schematic top view of an electronic device according to another embodiment of the present disclosure. Please refer to FIG. 2A and FIG. 2B at the same time. The
于另一未示出的实施例中,考虑到润湿条件(wetting conditions),保护结构的多个挡墙图案亦可具有不同尺寸,或者是,这些挡墙图案的形状亦可不相同且不对称,此仍属于本揭露所欲保护的范围。In another not-shown embodiment, considering the wetting conditions, the plurality of retaining wall patterns of the protective structure may also have different sizes, or the shapes of these retaining wall patterns may also be different and asymmetrical. , which still belongs to the scope of protection intended by this disclosure.
图3是本揭露的另一实施例的一种电子装置的俯视示意图。请同时参考图1与图3,电子装置100d与图1的电子装置100a相似,两者的差异在于:在本实施例中,当保护结构140d的厚度不足时,电子装置100d还包括金属层160,设置于基板110上且位于保护结构140d与基板110之间,以避免底部填充胶层130d溢出。于一实施例中,保护结构140d于基板110上的正投影完全重叠于金属层160在基板110上的正投影,其中金属层160在基板110上的正投影小于保护结构140d于基板110上的正投影,但不以此为限。FIG. 3 is a schematic top view of an electronic device according to another embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 3 at the same time. The
图4A至图4C是本揭露的一实施例的一种电子装置的制造方法的剖面示意图。首先,请参考图4A,提供基板110,其中基板110上包括第一接垫112。接着,接合电子元件120于基板110上,其中电子元件120包括第二接垫122,且第一接垫112与第二接垫122通过焊球150而结构性且电性连接在一起。接着,配置钢板P于基板110的部分表面S上,其中钢板P环绕电子元件120的周围。接着,以能量光束L来照射暴露于钢板P外的电子元件120与基板110。此处,能量光束L例如是极紫外光(Extreme Ultra Violet,EUV)或等离子(Plasma),可有效地降低基板110的接触角(contact angle),以增加后续底部填充胶层130a(请参考图4C)的润湿性。之后,请参考图4B,移除钢板P而于基板110上定义出限制区域A。也就是说,本实施例定义基板110的限制区域A的步骤是以能量光束L来处理基板110的表面S,以对基板110的部分区域(即限制区域A)进行表面改质。最后,请同时参考图4B与图4C,形成底部填充胶层130a于基板110上,其中底部填充胶层130a可容易地通过虹吸现象而流到限制区域A,以覆盖第一接垫112、第二接垫122以及焊球150,而底部填充胶层130a不会流到未进行表面改质的区域(即限制区域A之外的区域)。至此,已完成电子装置100e的制作。4A to 4C are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present disclosure. First, please refer to FIG. 4A , a
图5A至图5B是本揭露的另一实施例的一种电子装置的制造方法的局部步骤的剖面示意图。首先,请参考图5A,提供基板110f,其中基板110f上包括第一接垫112。接着,以光刻胶(Photoresist)覆盖部分基板110f。接着,以等离子、喷砂(Sandblasting)或蚀刻(etching)的方式,对基板110f进行表面处理,以在基板110f没有覆盖光刻胶的区域形成表面粗糙结构R,而定义出基板110f的限制区域A。之后,移除光刻胶,且接合电子元件120于基板110f上,其中电子元件120包括第二接垫122,且第一接垫112与第二接垫122通过焊球150而结构性且电性连接在一起。最后,请同时参考图5A与图5B,形成底部填充胶层130a于基板110f上,其中底部填充胶层130a可容易地通过虹吸现象而流到限制区域A,以覆盖第一接垫112、第二接垫122以及焊球150而固化,而底部填充胶层130a不会流到表面粗糙结构R上。至此,已完成电子装置100f的制作。5A to 5B are schematic cross-sectional views of partial steps of a method for manufacturing an electronic device according to another embodiment of the present disclosure. First, please refer to FIG. 5A , a
由于粗糙度较高时,底部填充胶层130a不会被湿润,因此可通过在不需要底部填充胶层130a的区域进行表面粗糙化,来限制底部填充胶层130a的流动范围,而达到控制底部填充胶层130a的面积。Since the
于另一未示出的实施例中,亦可通过彼此分离的多个微结构来取代表面粗糙结构R。详细来说,首先,提供基板。接着,以光刻胶覆盖部分基板,并通过光刻工艺等步骤来制作微结构,而定义出基板的限制区域。之后,接合电子元件于基板上。最后,形成底部填充胶层于基板上,其中底部填充胶层可容易地通过虹吸现象而流到限制区域而固化,而底部填充胶层不会流到微结构上。至此,已完成电子装置的制作。In another embodiment not shown, the rough surface structure R may also be replaced by a plurality of microstructures separated from each other. Specifically, first, a substrate is provided. Then, a part of the substrate is covered with photoresist, and a microstructure is fabricated through steps such as a photolithography process, so as to define a restricted area of the substrate. After that, the electronic components are bonded on the substrate. Finally, an underfill adhesive layer is formed on the substrate, wherein the underfill adhesive layer can easily flow to the restricted area through a siphon phenomenon to be cured, and the underfill adhesive layer cannot flow onto the microstructure. So far, the fabrication of the electronic device has been completed.
图6A至图6C是本揭露的另一实施例的一种电子装置的制造方法的剖面示意图。首先,请参考图6A,提供基板110,其中基板110上包括第一接垫112。接着,以丝网印刷法(screen printing)涂布含氟物质于基板110上。接着,烘干含氟物质,使基板110的表面S与含氟物质脱水产生Si-O键,而形成具有疏水性的保护结构140g,并以保护结构140g定义出基板110的限制区域A。接着,请参考图6B,接合电子元件120于基板110上,其中电子元件120包括第二接垫122,且第一接垫112与第二接垫122通过焊球150而结构性且电性连接在一起。最后,请同时参考图6B与图6C,形成底部填充胶层130a于基板110上,其中底部填充胶层130a可容易地通过虹吸现象而流到限制区域A,以覆盖第一接垫112、第二接垫122以及焊球150而固化,而底部填充胶层130a不会流到保护结构140g上。至此,已完成电子装置100g的制作。6A to 6C are schematic cross-sectional views of a method of manufacturing an electronic device according to another embodiment of the present disclosure. First, please refer to FIG. 6A , a
由于在基板110的表面S上涂覆含氟物质,而形成具有疏水性的保护结构140g,使底部填充胶层130a不会被保护结构140g润湿,借此来限制底部填充胶层130a的流动范围,而达到控制底部填充胶层130a的面积。Since the surface S of the
于另一未示出的实施例中,亦可通过聚合物(pollymer),例如是氟碳聚合物(Fluorocarbon polymer),来取代含氟物质。详细来说,首先,提供基板。接着,以八氟环丁烷(Octafluorocyclobutane,C4F8)来作为反应气体,在室温下通过电感耦合等离子体化学气相沉积(ICP-CVD)在基板上形成氟碳聚合物薄膜,其中氟碳聚合物薄膜整面性地覆盖基板的表面。接着,以光刻法来图案化氟碳聚合物薄膜,而形成具有疏水性的保护结构,并定义出基板的限制区域。也就是说,除了降低表面能的氟碳链之外,硅烷还可用于形成疏水表面。之后,接合电子元件于基板上。最后,形成底部填充胶层于基板上,其中底部填充胶层可容易地通过虹吸现象而流到限制区域中而固化,而底部填充胶层不会流到保护结构上。至此,已完成电子装置的制作。In another embodiment not shown, the fluorine-containing substance can also be replaced by a polymer (pollymer), such as a fluorocarbon polymer. Specifically, first, a substrate is provided. Next, using Octafluorocyclobutane (C 4 F 8 ) as a reactive gas, a fluorocarbon polymer film was formed on the substrate by inductively coupled plasma chemical vapor deposition (ICP-CVD) at room temperature, in which fluorocarbon The polymer film covers the entire surface of the substrate. Then, the fluorocarbon polymer film is patterned by photolithography to form a hydrophobic protection structure and define the restricted area of the substrate. That is, in addition to fluorocarbon chains that lower the surface energy, silanes can also be used to form hydrophobic surfaces. After that, the electronic components are bonded on the substrate. Finally, an underfill adhesive layer is formed on the substrate, wherein the underfill adhesive layer can easily flow into the restricted area through a siphon phenomenon to be cured, and the underfill adhesive layer cannot flow onto the protection structure. So far, the fabrication of the electronic device has been completed.
综上所述,在本揭露的实施例中,保护结构设置于基板上且邻近底部填充胶层,借此可限制底部填充胶层的范围,而使本揭露的电子装置可有效地控制底部填充胶层的面积,进而使底部填充胶层的用量及形状可具有一致性。To sum up, in the embodiments of the present disclosure, the protection structure is disposed on the substrate and adjacent to the underfill adhesive layer, thereby limiting the scope of the underfill adhesive layer, so that the electronic device of the present disclosure can effectively control the underfill. The area of the adhesive layer, and thus the amount and shape of the underfill adhesive layer can be consistent.
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.
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