CN115598146B - Crystal dislocation testing device and method - Google Patents
Crystal dislocation testing device and method Download PDFInfo
- Publication number
- CN115598146B CN115598146B CN202211356927.XA CN202211356927A CN115598146B CN 115598146 B CN115598146 B CN 115598146B CN 202211356927 A CN202211356927 A CN 202211356927A CN 115598146 B CN115598146 B CN 115598146B
- Authority
- CN
- China
- Prior art keywords
- wafer
- mask plate
- dislocation
- upper mask
- lower mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 68
- 238000012360 testing method Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000005291 magnetic effect Effects 0.000 claims abstract description 36
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000003321 amplification Effects 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 238000011156 evaluation Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 73
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8809—Adjustment for highlighting flaws
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention belongs to the technical field of crystallization performance evaluation of semiconductor crystals, and particularly relates to a wafer dislocation testing device and method, wherein the device comprises an upper mask plate, a plurality of observation lenses with optical amplification effect, a plurality of upper mask plates and a plurality of lower mask plates, wherein the upper mask plate is provided with a plurality of observation lenses with optical amplification effect; and observing surface dislocation of the wafer between the upper mask and the lower mask through an observation lens. Through setting up the magnet block on upper and lower mask plate, make upper mask plate rotate relative to lower mask plate freely, under the magnetic effect between magnet block of upper and lower mask plate, fix the spacing wafer and reduce the position deviation, improve the fixed stability of the wafer, make the specific crystal orientation mark more accurate.
Description
Technical Field
The invention relates to the technical field of crystallization performance evaluation of semiconductor crystals, in particular to a crystal dislocation testing device and method.
Background
At present, with the rapid development of information technology, semiconductor materials are widely used in various fields such as integrated circuits, power devices, and optoelectronic devices. Devices made of semiconductor materials support the electronic information industry such as computers, networks, communications, etc., while semiconductor wafer materials are the basis of the entire industry. The control level of lattice defects in the semiconductor single crystal material can affect the growth quality and performance parameters of the epitaxial thin film.
The index of dislocation density of the wafer was used to evaluate the level of lattice defect control. Conventionally, cutting wafers from the head to the tail of an ingot, grinding and polishing, corroding the surfaces by using a chemical reagent to expose dislocation, observing the appearance of dislocation corrosion pits under the view field of a metallographic microscope or an electron microscope, and counting the number to calculate the dislocation density. In the current inspection methods, observation by means of a microscope is often required. In addition, according to the visual result of the corrosion pit morphology, the orientation information of the specific crystal orientation can be identified on the wafer. In the subsequent crystal bar rounding process, the identification information is referred to find a specific crystal orientation, and a positioning edge reference surface is processed. In the process of manually marking the specific crystal orientation, the accuracy is possibly reduced due to the movement of the wafer, and the accuracy is in room for improvement.
Thus, there is a need for a solution to the problems of the prior art.
Disclosure of Invention
In order to solve the technical problems, according to one aspect of the invention, the invention provides a technical scheme that the lens magnification effect is utilized, the wafer can be observed in real time without a metallographic microscope or an electron microscope, the wafer position deviation is reduced through fixing and limiting, the specific crystal orientation mark is more accurate, and at least part of the problems in the prior art can be solved.
The crystal dislocation testing device comprises an upper mask plate, a lower mask plate and a crystal dislocation testing device, wherein a plurality of observation lenses which play a role in optical amplification are arranged on the upper mask plate, the lower mask plate is arranged on the opposite side of the upper mask plate, and the surface dislocation of a wafer between the upper mask plate and the lower mask plate is observed through the observation lenses.
As a preferable scheme of the wafer dislocation testing device, the observation lens array is distributed on the upper mask plate.
As an optimal scheme of the wafer dislocation testing device, the upper mask plate is provided with a marking area for marking the specific crystal orientation of a wafer.
The wafer dislocation testing device is characterized in that the marking area is arranged at the edge of the upper mask plate and penetrates through the upper mask plate in a long groove shape, and the specific crystal orientation of the wafer is kept parallel to the long groove direction of the marking area when the specific crystal orientation is marked so as to mark the specific crystal orientation by scribing on the wafer.
As a preferable scheme of the wafer dislocation testing device, the upper mask plate is provided with the upper mask plate magnetic block, the lower mask plate is provided with the lower mask plate magnetic block, and the rotatable fixing of the upper mask plate and the lower mask plate is realized through the magnetic force between the upper mask plate magnetic block and the lower mask plate magnetic block, and the center of the upper mask plate always coincides with the center of the lower mask plate in the rotating process.
As an optimal scheme of the wafer dislocation testing device, the upper mask magnetic block and the lower mask magnetic block are respectively arranged at the central positions of the upper mask and the lower mask.
As a preferable scheme of the wafer dislocation testing device, the lower mask plate is provided with a fixing groove for placing and limiting a wafer, and the size of the fixing groove is matched with the diameter of the wafer to be tested.
As a preferable scheme of the wafer dislocation testing device, the lower mask plate is provided with a wafer taking and placing groove, and the taking and placing groove is arranged at the peripheral edge of the lower mask plate and communicated with the fixing groove.
According to another aspect of the invention, the invention provides a technical scheme that the method for testing by using the crystal dislocation testing device comprises the following steps:
s1, processing and chemically etching the surface of a wafer to form dislocation etching pits;
s2, placing the wafer processed in the step S1 in a lower mask fixing groove to realize limit, and covering an upper mask on the wafer;
and S3, visually observing the dislocation of the wafer through an observation lens on the upper mask plate.
The method for testing by using the crystal dislocation testing device is characterized in that before processing the surface of a wafer, an alignment mark before separating the wafer from a crystal bar is made when the wafer is cut, the dislocation density of the wafer is observed, specific crystal orientation information is marked by statistics of dislocation density, and the specific crystal orientation information is transferred to a single crystal bar body.
Compared with the prior art, the invention has the following beneficial effects:
(1) According to the crystal dislocation testing device provided by the invention, the observation lens is arranged on the upper mask plate, so that the lens amplification effect is utilized, the crystal dislocation testing device can observe in real time without a metallographic microscope or an electron microscope, and the operation convenience is improved.
(2) According to the crystal dislocation testing device provided by the invention, the upper mask plate and the lower mask plate are respectively provided with the magnetic blocks, so that the upper mask plate rotates freely relative to the lower mask plate, the position deviation of a limiting wafer is reduced under the magnetic action between the upper mask plate and the lower mask plate magnetic blocks, the wafer fixing stability is improved, and the specific crystal orientation mark is more accurate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of the device of the present invention;
FIG. 2 is a schematic representation of the (100) crystal dislocation corrosion pit morphology of the present invention;
FIG. 3 is a representation of the physical morphology of the etch pit with angular dislocation at a specific crystal orientation of the present invention;
FIG. 4 is a schematic diagram showing the dislocation morphology and locating edge correspondence of the (100) crystal orientation GaAs of the present invention.
Reference numerals illustrate:
100-upper mask plate, 101-identification area, 102-upper mask plate magnetic block, 103-observation lens, 200-lower mask plate, 201-lower mask plate magnetic block, 202-fixed slot, 203-pick-and-place slot, 300-wafer and 400-corrosion pit
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description will be made clearly and fully with reference to the technical solutions in the embodiments, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear are referred to in the embodiments of the present invention), the directional indications are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
Example 1
As shown in FIG. 1, a crystal dislocation testing apparatus for use in a crystallization performance evaluation process of a semiconductor crystal comprises an upper mask plate 100, wherein a plurality of observation lenses 103 for optical magnification are provided on the upper mask plate 100, a lower mask plate 200 is provided on a side of a wafer 300 facing away from the upper mask plate 100, that is, the lower mask plate 200 is provided on an opposite side of the upper mask plate 100, and the upper mask plate 100 is freely rotatable relative to the lower mask plate 200, and surface dislocation etch pits of the wafer 300 are observed through the observation lenses 103.
The upper mask plate 100 of the device is provided with small holes for installing the observation lenses 103, the observation lenses 103 are arranged on the small holes of the upper mask plate 100, and the observation lenses 103 are distributed on the upper mask plate 100 in an array mode, and the surface dislocation corrosion pits of the wafer 300 can be observed visually through the optical amplification effect of the observation lenses 103. The upper mask 100 is provided with a marking area 101 for marking a specific crystal orientation of a wafer, specifically, the marking area 101 is disposed at an edge position of the upper mask 100 and penetrates the upper mask 100 in a shape of a long groove, the upper mask 100 of the device can freely rotate, and the specific crystal orientation of the wafer is kept parallel to the long groove direction of the marking area 101 when the specific crystal orientation is marked, so that the specific crystal orientation is marked on the wafer by scribing, wherein the specific crystal orientation refers to a specific crystal face distribution orientation. The center positions of the upper mask 100 and the lower mask 200 of the device are provided with magnetic blocks, specifically, the upper mask 100 is provided with the upper mask magnetic block, the lower mask 100 is provided with the lower mask magnetic block, the rotatable fixing of the upper mask 100 and the lower mask 200 is realized through the magnetic force between the upper mask magnetic block and the lower mask magnetic block, the center of the upper mask 100 always coincides with the center of the lower mask 200 in the rotating process, namely, the center of the upper mask 100 always coincides with the center of the wafer 300 in the rotating process is kept, and the center deviation is not generated. The lower mask plate 200 of the device is provided with a fixing groove 202 for placing and limiting the wafer, and the size of the fixing groove is matched with the diameter of the wafer 300 to be tested, so that the fixing groove can be used for fixing the limiting test wafer 300. The lower mask 200 of the device is provided with a wafer 300 picking and placing channel, the wafer 300 picking and placing channel is configured as a picking and placing groove 203, and the picking and placing groove 203 is arranged at the circumferential edge of the lower mask 200 and communicated with the fixed groove 202, so that the wafer 300 clamping tool can conveniently go in and out.
By forming small holes in the upper mask plate 100 for mounting the observation lens 103, the observation can be performed in real time by utilizing the lens magnification effect without using a metallographic microscope or an electron microscope, thereby improving the operation convenience.
By arranging the magnetic blocks on the upper and lower masks 200, the upper mask 100 rotates freely relative to the lower mask 200, and the fixed limit wafer 300 reduces position deviation under the magnetic action between the upper mask magnetic block 102 and the lower mask magnetic block 201, so that the fixed stability of the wafer 300 is improved, and the specific crystal orientation mark is more accurate.
Meanwhile, the invention provides a method for testing by using the crystal dislocation testing device, which comprises the following steps:
s1, processing and chemically etching the surface of a wafer 300 to form dislocation etching pits;
s2, placing the wafer 300 processed in the step S1 in a lower mask fixing groove 202 to realize limit, and covering an upper mask on the wafer;
s3, visually observing the dislocation of the wafer through an observation lens 103 on the upper mask plate.
Wherein, when the test device is processed as described above;
It is necessary to ensure that the array of small holes for mounting the observation lens 103 is distributed on the upper mask plate 100, that the spacing of the small holes satisfies the observation condition, so that the visual observation of the dislocation corrosion pits on the surface of the wafer 300 is convenient and comfortable, and that on the one hand, attention is paid to the degree of adhesion of the assembled wafer 300 between the upper mask plate 100 and the lower mask plate 200, so that the phenomenon of asynchronism does not occur when the wafer is freely rotated, and on the other hand, it is necessary to ensure the matching accuracy of the fixing groove 202 and the wafer 300 to be tested.
Meanwhile, during assembly, the assembly environment needs to be guaranteed to be in a clean state, and the testing device after machining and assembly is guaranteed to be reliable in observation.
Cutting the test wafer 300 before processing the surface of the wafer 300, and making alignment marks before separating from the ingot, wherein cutting the test wafer 300 is completed by a conventional cutting method, and position marks are needed to be made when separating from the ingot.
After the wafer 300 is placed in the fixing groove 202 and limited, the lower mask 200 is rotated to an optimal observation orientation, wherein the optimal observation orientation refers to that the placement direction of the long side of the dislocation corrosion pit is horizontal or vertical so as to meet the requirement of observation precision.
After visual observation of the dislocation by the observation lens 103, statistical dislocation can be performed to identify specific crystal face orientation information, and the crystal face orientation information is transferred to the single crystal rod.
Example 2
Taking the crystal orientation GaAs wafer 300 as an example, the testing process is as follows, using the testing apparatus described above:
After the crystal orientation GaAs wafer 300 is polished and corroded, the crystal orientation GaAs wafer 300 is placed in the fixing groove 202 of the lower mask 200, then the upper mask 100 is placed on the surface of the test wafer 300, magnetic force is generated between the magnetic blocks of the upper mask 100 and the magnetic blocks of the lower mask 200, and the wafer 300 is limited and fixed well. The dislocation etch pit morphology is observed through the lens viewing aperture, the (100) crystal orientation is shown in fig. 2, and the upper mask plate 100 is rotated to an optimal viewing orientation, such as by keeping the dislocation pit long side direction parallel to the viewing direction, and specific crystal orientation information-related marks are made in the identification area 101. After completion of the dislocation density statistics, the test wafer 300 is removed, and the pre-dicing position is restored based on the original marks on the wafer 300, while the identified specific crystal face orientation information is transferred to the single crystal rod.
Example 3
Taking the wafer 300 with the offset angle of the crystal orientation as an example, the testing device is adopted to test, and the testing process is as follows:
after the wafer 300 with the deflection angle InAs in the crystal orientation is polished and corroded, the wafer 300 is placed in the fixing groove 202 of the lower mask 200, then the upper mask 100 is placed on the surface of the test wafer 300, magnetic force is generated between the magnetic blocks of the upper mask 100 and the magnetic blocks of the lower mask 200, and the wafer 300 is limited and fixed well. The dislocation corrosion pit morphology is observed through the lens observation hole, the dislocation corrosion pit physical morphology with a specific crystal orientation is shown in fig. 3, the lower mask 200 is rotated to an optimal observation orientation, for example, the dislocation pit side length direction is kept parallel to the observation direction, and specific crystal orientation information-related marks are made on the identification area 101. (100) The schematic diagram of the dislocation morphology and the locating edge correspondence of the crystal orientation GaAs is shown in fig. 4, the etch pit 400 is shown in fig. 4, after the dislocation density statistics is completed, the test wafer 300 is taken out, the position before dicing is restored according to the original mark on the wafer 300, and meanwhile, the specific crystal orientation information of the mark is transferred to the single crystal rod body.
The results of the above embodiments show that the crystal dislocation testing device and method provided by the invention can observe in real time by utilizing the lens amplification effect without using a metallographic microscope or an electron microscope, is convenient to operate, and can improve the stability of the wafer 300 fixation, so that the specific crystal orientation mark is more accurate.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the content of the present invention or direct/indirect application in other related technical fields are included in the scope of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211356927.XA CN115598146B (en) | 2022-11-01 | 2022-11-01 | Crystal dislocation testing device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211356927.XA CN115598146B (en) | 2022-11-01 | 2022-11-01 | Crystal dislocation testing device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115598146A CN115598146A (en) | 2023-01-13 |
| CN115598146B true CN115598146B (en) | 2025-03-14 |
Family
ID=84850079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211356927.XA Active CN115598146B (en) | 2022-11-01 | 2022-11-01 | Crystal dislocation testing device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115598146B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107850761A (en) * | 2015-08-06 | 2018-03-27 | 高通股份有限公司 | Sub-micron wafer aligned |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590125A (en) * | 1991-09-30 | 1993-04-09 | Matsushita Electric Ind Co Ltd | Position alignment equipment |
| CN102621827B (en) * | 2012-04-23 | 2014-03-12 | 杭州士兰明芯科技有限公司 | Maskless exposure system and exposure method thereof |
| DE102019113054A1 (en) * | 2019-05-17 | 2020-11-19 | HELLA GmbH & Co. KGaA | Method for producing a diaphragm array for a microlens array |
| CN115219517A (en) * | 2021-04-19 | 2022-10-21 | 广州南砂晶圆半导体技术有限公司 | Rapid detection method for dislocation distribution in silicon carbide wafer |
-
2022
- 2022-11-01 CN CN202211356927.XA patent/CN115598146B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107850761A (en) * | 2015-08-06 | 2018-03-27 | 高通股份有限公司 | Sub-micron wafer aligned |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115598146A (en) | 2023-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3213563B2 (en) | Manufacturing method of notchless wafer | |
| CN106367813B (en) | A kind of processing method of semiconductor monocrystal silicon crystal bar and the silicon wafer plane of reference | |
| JP2000146781A (en) | Sample analysis method, sample preparation method and device therefor | |
| CN103488063B (en) | A kind of alignment mark and preparation method thereof | |
| CN112394073B (en) | Method for rapidly and accurately measuring orientation of crystal axis of gallium oxide single crystal | |
| CN116657249B (en) | A silicon carbide wafer with uniformly distributed stress and a method for non-destructively and accurately measuring the stress of the wafer in all directions | |
| CN111220819A (en) | A kind of focused ion beam cutting sample preparation method | |
| US4134066A (en) | Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell | |
| CN115598146B (en) | Crystal dislocation testing device and method | |
| CN103871917B (en) | Method for preparing samples for semiconductor failure analysis | |
| CN108982178B (en) | Preparation method of galvanized steel sheet standard sample | |
| JP3967668B2 (en) | Micro-dimensional standard sample and manufacturing method thereof | |
| KR100694580B1 (en) | Method of manufacturing specimen for transmission electron microscope analysis | |
| US4884887A (en) | Method for positioning a crystal ingot | |
| CN211554462U (en) | A calibration tool for polarizing microscope | |
| US7072441B2 (en) | Alignment diffractometer | |
| JP3858669B2 (en) | Same point measurement method using auxiliary jig for surface inspection | |
| JPS6366946A (en) | Wafer stage for measuring hole | |
| CN120521548B (en) | High aspect ratio micro-hole standard sample and its preparation and characterization method | |
| JP3542084B2 (en) | Loading method and system for scriber shank | |
| JPH05231998A (en) | Method of manufacture specimen for electron microscopic observation | |
| US2439836A (en) | Method of and apparatus for locating the direction of natural axes of quartz crystalsections | |
| CN217278499U (en) | Test fixture and PL testing device | |
| WO2019217873A1 (en) | Sample support with fiducial indicia | |
| US6764383B1 (en) | Methods and apparatuses for processing microfeature workpiece samples |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |