CN115557881B - Organic small molecule hole transport material, synthesis method and application thereof - Google Patents
Organic small molecule hole transport material, synthesis method and application thereof Download PDFInfo
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Abstract
本发明公开了一种有机小分子空穴传输材料、合成方法及其应用,该空穴传输材料以三(4‑碘苯)胺为中心核,引入修饰过的封端咔唑基团,分子结构简单,具有可调且合适的能级位置,较高的空穴迁移率和电导率,在有机溶剂中表现出良好的溶解性。将该空穴传输材料应用于量子点(包括钙钛矿量子点以及其他核壳类量子点)电致发光二极管中的空穴传输材料,所得器件展现出均匀的发光,低启亮电压,高发光效率和较好的寿命稳定性特点,具有广泛的应用前景。
The invention discloses an organic small molecule hole transport material, a synthesis method and an application thereof. The hole transport material uses tri(4-iodophenyl)amine as a central core, introduces a modified capped carbazole group, has a simple molecular structure, has an adjustable and suitable energy level position, a high hole mobility and conductivity, and exhibits good solubility in organic solvents. The hole transport material is applied to the hole transport material in quantum dot (including perovskite quantum dots and other core-shell quantum dots) electroluminescent diodes, and the resulting device exhibits uniform luminescence, low turn-on voltage, high luminous efficiency and good life stability, and has broad application prospects.
Description
技术领域Technical Field
本发明涉及量子点发光二极管材料领域,具体为咔唑基团修饰的有机小分子空穴传输材料及其在量子点发光二极管中的应用。The invention relates to the field of quantum dot light-emitting diode materials, in particular to carbazole group-modified organic small molecule hole transport materials and applications thereof in quantum dot light-emitting diodes.
背景技术Background Art
量子点发光二极管(QLED)结构通常为具有夹层结构的双异质结结构,宽带隙p型和n型半导体分别作为空穴传输层(HTL)和电子传输层(ETL),窄带隙半导体作为发光层。在QLED的工作过程中,空穴和电子分别从HTL和ETL注入到发光层中。然后,光子通过电子空穴对在量子点发光层中的辐射复合而产生并发射到器件外。在这一过程中,QLED目前还存在载流子注入势垒较大、载流子迁移率不平衡等问题,这些问题的存在直接导致器件启亮电压高、发光效率难以达到理论极限、器件稳定性不足。因此,开发新型空穴传输层,调控能级、空穴迁移率等来优化和改善器件性能会是一种有效的策略。The structure of quantum dot light-emitting diode (QLED) is usually a double heterojunction structure with a sandwich structure, with wide bandgap p-type and n-type semiconductors as hole transport layer (HTL) and electron transport layer (ETL), respectively, and narrow bandgap semiconductor as light-emitting layer. During the operation of QLED, holes and electrons are injected into the light-emitting layer from HTL and ETL, respectively. Then, photons are generated and emitted out of the device through the radiative recombination of electron-hole pairs in the quantum dot light-emitting layer. In this process, QLED currently still has problems such as large carrier injection barrier and unbalanced carrier mobility. The existence of these problems directly leads to high device start-up voltage, difficulty in reaching the theoretical limit of luminous efficiency, and insufficient device stability. Therefore, it would be an effective strategy to develop a new hole transport layer and adjust the energy level, hole mobility, etc. to optimize and improve device performance.
契合高性能QLED的空穴传输层需要满足以下条件:(1)具有与相邻的功能层匹配的HOMO能级,尤其是与发光层匹配,降低器件中的空穴注入势垒;(2)具有较浅的LUMO能级,将少量高能电子从势垒中逃逸导致的载流子损耗降低;(3)材料的吸收光谱尽量不与发光层的发射光谱重叠,防止层间的能量转移导致的发光效率损失;(4)具有合适的空穴迁移率的电导率,使得器件中空穴和电子能够平衡注入;(5)溶液法应用时满足正交溶剂需求,避免溶剂对下层薄膜的侵蚀和受到上层溶剂的侵蚀;(6)具有良好的疏水性、热稳定性和化学稳定性,本身不易吸湿不易降解,也不易因接触促使量子点发光层降解,实现更长的器件寿命。The hole transport layer that matches high-performance QLED needs to meet the following conditions: (1) It has a HOMO energy level that matches the adjacent functional layer, especially the light-emitting layer, to reduce the hole injection barrier in the device; (2) It has a shallow LUMO energy level to reduce the carrier loss caused by the escape of a small number of high-energy electrons from the barrier; (3) The absorption spectrum of the material should not overlap with the emission spectrum of the light-emitting layer as much as possible to prevent the loss of luminous efficiency caused by energy transfer between layers; (4) It has an appropriate conductivity with hole mobility so that holes and electrons can be injected into the device in a balanced manner; (5) When the solution method is used, it meets the requirements of orthogonal solvents to avoid the corrosion of the solvent on the lower film and the corrosion of the upper solvent; (6) It has good hydrophobicity, thermal stability and chemical stability, is not easy to absorb moisture and degrade, and is not easy to cause the quantum dot light-emitting layer to degrade due to contact, so as to achieve a longer device life.
目前应用于QLED的空穴传输层相对较少,导致在器件设计时,从可供选择的材料中挑选匹配的空穴传输材料相对困难,因此,开发新型空穴传输材料有助于使器件发光效率更接近理论极限。Currently, there are relatively few hole transport layers used in QLEDs, which makes it relatively difficult to select matching hole transport materials from the available materials when designing the device. Therefore, the development of new hole transport materials will help make the device's luminous efficiency closer to the theoretical limit.
发明内容Summary of the invention
为了提高量子点发光二极管的发光效率,本发明提供以4,4',4”-三(咔唑-9-基)三苯胺作为核心,咔唑侧基修饰的有机小分子空穴传输材料,通过引入不同基团和不同引入位置实现对分子最高占据轨道和最低空轨道能级、空穴迁移率的调控,该材料具有良好的热稳定性,与量子点匹配的能级,空穴迁移率较高,溶解性好,且材料易于合成、提纯方便,可应用于量子点发光二极管,也可拓展应用于钙钛矿发光二极管、钙钛矿太阳能电池、有机太阳能电池和有机电致发光器件等领域。In order to improve the luminous efficiency of quantum dot light-emitting diodes, the present invention provides an organic small molecule hole transport material with 4,4',4"-tri(carbazole-9-yl)triphenylamine as the core and modified with carbazole side groups. The material can regulate the energy levels of the highest occupied orbital and the lowest unoccupied orbital of the molecule and the hole mobility by introducing different groups and different introduction positions. The material has good thermal stability, an energy level matching that of quantum dots, a high hole mobility, good solubility, and is easy to synthesize and purify. The material can be applied to quantum dot light-emitting diodes, and can also be expanded to the fields of perovskite light-emitting diodes, perovskite solar cells, organic solar cells, and organic electroluminescent devices.
本发明的目的通过以下技术方案实现:The purpose of the present invention is achieved through the following technical solutions:
本发明所提供的咔唑基团修饰的有机小分子空穴传输材料,其具有如下分子结构通式(Ⅰ):The carbazole group-modified organic small molecule hole transport material provided by the present invention has the following molecular structure formula (I):
式(Ⅰ),其中,R1~R8选自于氢原子、甲氧基、苯氧基、甲巯基、苯巯基等基团中任意一基团,且R1~R8中的任意1-4个位置与不同基团结合。Formula (I), wherein R1 - R8 are selected from any one of hydrogen atom, methoxyl group, phenoxyl group, methylmercapto group, phenylmercapto group and the like, and any 1-4 positions of R1-R8 are combined with different groups.
制备式(Ⅰ)所述的咔唑基团修饰的有机小分子空穴传输材料的方法,包括下述步骤:The method for preparing the carbazole group-modified organic small molecule hole transport material described in formula (I) comprises the following steps:
(1)将三苯胺和N-碘代丁二酰亚胺中在催化剂乙酸作用下发生反应制备三(4-碘苯)胺的步骤,(1) a step of reacting triphenylamine and N-iodosuccinimide under the action of acetic acid as a catalyst to prepare tri(4-iodophenyl)amine,
(2)将三(4-碘苯)胺与具有不同取代基团的咔唑进行Buchwald-Hartwig反应制备目标产物的步骤,(2) a step of subjecting tri(4-iodophenyl)amine and carbazole having different substituents to a Buchwald-Hartwig reaction to prepare a target product,
较佳的,步骤(1)中,反应体系采用氯仿作为溶剂。Preferably, in step (1), the reaction system uses chloroform as solvent.
较佳的,步骤(1)中,N-碘代丁二酰亚胺和三苯胺的投料摩尔比为3~4:1,优选4:1。Preferably, in step (1), the molar ratio of N-iodosuccinimide to triphenylamine is 3 to 4:1, preferably 4:1.
较佳的,步骤(2)中,反应在保护气氛下进行,反应体系采用DMF作为溶剂。Preferably, in step (2), the reaction is carried out under a protective atmosphere, and the reaction system uses DMF as a solvent.
较佳的,步骤(2)中,反应以碘化亚铜、1,10-菲罗啉和碳酸钾作为催化剂,碘化亚铜和三(4-碘苯)胺的投料摩尔比为0.5~0.7:1,优选0.6:1;1,10-菲罗啉和三(4-碘苯)胺的投料摩尔比为0.5~0.7:1,优选0.6:1;碳酸钾和三(4-碘苯)胺的投料摩尔比为6~9:1,优选8:1。Preferably, in step (2), the reaction uses cuprous iodide, 1,10-phenanthroline and potassium carbonate as catalysts, the molar ratio of cuprous iodide to tri(4-iodophenyl)amine is 0.5-0.7:1, preferably 0.6:1; the molar ratio of 1,10-phenanthroline to tri(4-iodophenyl)amine is 0.5-0.7:1, preferably 0.6:1; the molar ratio of potassium carbonate to tri(4-iodophenyl)amine is 6-9:1, preferably 8:1.
较佳的,步骤(2)中,三(4-碘苯)胺与修饰的咔唑分子的投料摩尔比为1:4~4.5,优选1:4。Preferably, in step (2), the molar ratio of tri(4-iodophenyl)amine to the modified carbazole molecule is 1:4 to 4.5, preferably 1:4.
本发明还提出一种所述的有机小分子空穴传输材料作为量子点发光二极管中空穴传输材料的应用。The present invention also proposes an application of the organic small molecule hole transport material as a hole transport material in a quantum dot light emitting diode.
较佳的,作为p-i-n结构的量子点发光二极管的空穴传输材料中的应用。Preferably, it is used as a hole transport material in a p-i-n structured quantum dot light emitting diode.
本发明还提出一种所述的空穴传输材料作为有机电致发光器件中的发光材料的用途。The present invention also proposes a use of the hole transport material as a light-emitting material in an organic electroluminescent device.
与现有技术相比,本发明技术方案的优点如下:Compared with the prior art, the advantages of the technical solution of the present invention are as follows:
1、本发明提供的系列咔唑基团修饰的有机小分子空穴传输材料具有简单的分子结构,以三(4-碘苯)胺为中心核,引入修饰过的咔唑分子(接甲氧基、苯氧基、甲巯基、苯巯基等基团),具有良好的光电效应,有利于高性能发光二极管的制备。不同基团的引入可有效改善分子的能级和空穴迁移率,使得材料能够具有更好的空穴注入和传输性能,降低启亮电压,改善器件性能,提高发光效率,提高器件稳定性。1. The series of organic small molecule hole transport materials modified with carbazole groups provided by the present invention have a simple molecular structure, with tri(4-iodophenyl)amine as the central core, and the introduction of modified carbazole molecules (with methoxy, phenoxy, methylmercapto, phenylmercapto and other groups), which have good photoelectric effect and are conducive to the preparation of high-performance light-emitting diodes. The introduction of different groups can effectively improve the energy level and hole mobility of the molecule, so that the material can have better hole injection and transport performance, reduce the turn-on voltage, improve device performance, improve luminous efficiency, and improve device stability.
2、本发明的咔唑基团修饰的有机小分子空穴传输材料,通过引入侧链基团,使得材料实现热稳定性好、疏水性好、适于溶液法应用、满足正交溶剂等需求,同时所引入基团与其邻近层的相互作用有利于在器件应用中实现高性能。2. The organic small molecule hole transport material modified with the carbazole group of the present invention, by introducing side chain groups, makes the material have good thermal stability, good hydrophobicity, suitable for solution method application, and meets the requirements of orthogonal solvents. At the same time, the interaction between the introduced group and its adjacent layer is conducive to achieving high performance in device applications.
3、本发明将咔唑基团修饰的有机小分子空穴传输材料应用于量子点发光二极管中,具有合适的能级,较高的空穴迁移率,良好的疏水性,可实现较低的启亮电压和较高的量子点发光二极管的发光效率和发光亮度,同时可以改善器件稳定性。3. The present invention applies the organic small molecule hole transport material modified by the carbazole group to the quantum dot light-emitting diode, which has a suitable energy level, a high hole mobility, and good hydrophobicity, can achieve a lower turn-on voltage and a higher luminous efficiency and brightness of the quantum dot light-emitting diode, and can also improve the device stability.
4、本发明的材料可优先用于量子点发光二极管的空穴传输层。4. The material of the present invention can be preferentially used in the hole transport layer of quantum dot light-emitting diodes.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为以i-1和i-2作为空穴传输层制备量子点发光二极管的结构示意图。FIG1 is a schematic diagram of the structure of a quantum dot light-emitting diode prepared using i-1 and i-2 as hole transport layers.
图2为本发明实施例制备的材料i-1在制备成薄膜后的紫外可见吸收光谱和荧光光谱。FIG. 2 shows the ultraviolet-visible absorption spectrum and fluorescence spectrum of the material i-1 prepared in an embodiment of the present invention after being prepared into a thin film.
图3为本发明实施例制备的材料i-2在制备成薄膜后的紫外可见吸收光谱和荧光光谱。FIG3 shows the ultraviolet-visible absorption spectrum and fluorescence spectrum of the material i-2 prepared in an embodiment of the present invention after being prepared into a thin film.
图4为本发明以i-1和i-2作为空穴传输材料的量子点发光二极管的电流密度-工作电压-亮度关系曲线。FIG. 4 is a current density-operating voltage-brightness relationship curve of a quantum dot light-emitting diode using i-1 and i-2 as hole transport materials according to the present invention.
图5为本发明以i-1和i-2作为空穴传输材料的量子点发光二极管的电流效率-电流密度关系曲线。FIG. 5 is a current efficiency-current density relationship curve of the quantum dot light-emitting diode using i-1 and i-2 as hole transport materials according to the present invention.
图6为本发明以i-1和i-2作为空穴传输材料的量子点发光二极管的电致发光光谱图。FIG. 6 is an electroluminescence spectrum diagram of a quantum dot light-emitting diode using i-1 and i-2 as hole transport materials according to the present invention.
图7为实施例1制备的材料i-1的1H NMR谱图。FIG. 7 is a 1 H NMR spectrum of material i-1 prepared in Example 1.
图8为实施例2制备的材料i-2的1H NMR谱图。FIG8 is a 1 H NMR spectrum of material i-2 prepared in Example 2.
具体实施方式DETAILED DESCRIPTION
下面将结合具体应用实例和图表来说明本发明,以下提供的实施例有助于本领域研究人员更好的理解本发明,但是不以任何形式局限于本发明,在本发明的构思基础上可以有若干变形替换形式,这些都属于本发明的保护范围。The present invention will be explained below in conjunction with specific application examples and diagrams. The embodiments provided below will help researchers in the field to better understand the present invention, but are not limited to the present invention in any form. Based on the concept of the present invention, there may be several modified and replaced forms, which all belong to the protection scope of the present invention.
下述实施例中所述实验方法,如无特殊说明,均为常规方法;所述试剂和材料,如无特殊说明,均可从商业途径获得。The experimental methods described in the following examples are conventional methods unless otherwise specified; the reagents and materials described are commercially available unless otherwise specified.
本发明合成的化合物通过UV-vis和PL光谱、核磁进行了表征,同时以所合成的材料作为空穴传输层制备了量子点发光二极管,并分析了器件的性能;研究发现这些器件具有良好的性能。The compounds synthesized by the present invention are characterized by UV-vis and PL spectra and nuclear magnetic resonance. At the same time, quantum dot light-emitting diodes are prepared using the synthesized materials as hole transport layers, and the performance of the devices is analyzed; the research finds that these devices have good performance.
本发明设计合理,制备的咔唑基团修饰的有机小分子空穴传输材料分子结构简单,以三(4-碘苯)胺为中心核,引入修饰过的封端咔唑基团。这类材料合成步骤简单,易于提纯。在有机溶剂中具有良好的溶解性,合适的分子能级,较高的空穴迁移率。将其应用于量子点发光二极管中,器件具有良好的稳定性,较低的启亮电压,较高的发光亮度和发光效率。The invention has a reasonable design, and the prepared organic small molecule hole transport material modified with a carbazole group has a simple molecular structure, with tri(4-iodophenyl)amine as the central core, and a modified end-capped carbazole group is introduced. The synthesis steps of this type of material are simple and easy to purify. It has good solubility in organic solvents, a suitable molecular energy level, and a high hole mobility. When it is applied to a quantum dot light-emitting diode, the device has good stability, a low start-up voltage, and high luminous brightness and luminous efficiency.
实施例1Example 1
一种基于咔唑基团修饰的有机小分子空穴传输材料i-1的合成,合成路线如下:A synthesis of an organic small molecule hole transport material i-1 modified with a carbazole group, the synthesis route is as follows:
(1)在室温下,将三苯胺(3.68g,14.47mmol)、N-碘代丁二酰亚胺(10.8g,48mmol)和氯仿(90mL)加入乙酸(60mL)中,搅拌过夜,并用锡箔纸避光。然后将混合物倒入硫代硫酸钠饱和水溶液中,用二氯甲烷萃取得到有机相。有机相浓缩掉溶剂,经正己烷-二氯甲烷结晶得到8.7g的三(4-碘苯)胺。(1) At room temperature, triphenylamine (3.68 g, 14.47 mmol), N-iodosuccinimide (10.8 g, 48 mmol) and chloroform (90 mL) were added to acetic acid (60 mL), stirred overnight, and protected from light with tin foil. The mixture was then poured into a saturated aqueous solution of sodium thiosulfate and extracted with dichloromethane to obtain an organic phase. The organic phase was concentrated to remove the solvent and crystallized from n-hexane-dichloromethane to obtain 8.7 g of tri(4-iodophenyl)amine.
(2)将三(4-碘苯)胺(0.340g,0.55mmol),2,7-二甲氧基咔唑(0.50g,2.20mmol)、碘化亚铜(63mg,0.33mmol),1,10-菲罗啉(60mg,0.33mmol),碳酸钾(0.61mg,4.42mmol)加入干燥的DMF(20mL)中。混合物在氩气保护下回流,并用薄层色谱(TLC)监测反应。反应结束后,向反应混合物中加入水,过滤得到沉淀,并用水和甲醇洗涤几次。经丙酮结晶纯化,得到0.31g的i-1,收率60%。吸收和PL光谱如图2所示,核磁谱如图7所示。1H NMR(400MHz,C6D6,298K),δ(ppm):7.91(d,J=8.6Hz,6H),7.16(m,6H),7.10(m,6H),7.06(d,J=7.8Hz,6H),6.98(dd,J=8.6Hz,J=2.1Hz,6H),3.52(18H,s,OMe).13C NMR(100MHz,C6D6,298K),δ(ppm):158.56,145.70,142.20,132.46,127.59,124.81,119.90,117.38,107.76,94.21,54.45.(2) Tri(4-iodophenyl)amine (0.340 g, 0.55 mmol), 2,7-dimethoxycarbazole (0.50 g, 2.20 mmol), cuprous iodide (63 mg, 0.33 mmol), 1,10-phenanthroline (60 mg, 0.33 mmol), and potassium carbonate (0.61 mg, 4.42 mmol) were added to dry DMF (20 mL). The mixture was refluxed under argon protection, and the reaction was monitored by thin layer chromatography (TLC). After the reaction was completed, water was added to the reaction mixture, and the precipitate was filtered and washed with water and methanol several times. Purification by acetone crystallization gave 0.31 g of i-1 with a yield of 60%. The absorption and PL spectra are shown in FIG2 , and the NMR spectrum is shown in FIG7 . 1 H NMR (400MHz, C 6 D 6 ,298K), δ (ppm): 7.91 (d, J = 8.6 Hz, 6H), 7.16 (m, 6H), 7.10 (m, 6H), 7.06 (d, J = 7.8 Hz, 6H), 6.98 (dd, J = 8.6 Hz, J = 2.1 Hz, 6H), 3.52 (18H, s, OMe). 13 C NMR (100MHz, C 6 D 6 , 298K), δ (ppm): 158.56, 145.70, 142.20, 132.46, 127.59, 124.81, 119.90, 117.38, 107.76, 94.21, 54.45.
实施例2Example 2
一种基于咔唑基团修饰的有机小分子空穴传输材料i-2的合成,合成路线如下:A synthesis of an organic small molecule hole transport material i-2 modified with a carbazole group, the synthesis route is as follows:
(1)在室温下,将三苯胺(3.68g,14.47mmol)、N-碘代丁二酰亚胺(10.8g,48mmol)和氯仿(90mL)加入乙酸(60mL)中,搅拌过夜,并用锡箔纸避光。然后将混合物倒入硫代硫酸钠饱和水溶液中,用二氯甲烷萃取得到有机相。有机相浓缩掉溶剂,经正己烷-二氯甲烷结晶得到8.7g的三(4-碘苯)胺。(1) At room temperature, triphenylamine (3.68 g, 14.47 mmol), N-iodosuccinimide (10.8 g, 48 mmol) and chloroform (90 mL) were added to acetic acid (60 mL), stirred overnight, and protected from light with tin foil. The mixture was then poured into a saturated aqueous solution of sodium thiosulfate and extracted with dichloromethane to obtain an organic phase. The organic phase was concentrated to remove the solvent and crystallized from n-hexane-dichloromethane to obtain 8.7 g of tri(4-iodophenyl)amine.
(2)将三(4-碘苯)胺(0.340g,0.55mmol),3,6-二甲氧基咔唑(0.50g,2.20mmol),碘化亚铜(63mg,0.33mmol),1,10-菲罗啉(60mg,0.33mmol),碳酸钾(0.61mg,4.42mmol)加入干燥的DMF(20mL)中。混合物在氩气保护下回流,并用薄层色谱(TLC)监测反应。反应结束后,向反应混合物中加入水,过滤得到沉淀,并用水和甲醇洗涤几次。经丙酮结晶纯化,得到0.88g的i-2,收率62%。吸收和PL光谱如图3所示,核磁谱如图8所示。1H NMR(400MHz,DMSO-d6,298K),δ(ppm):7.84(m,6H),7.61(d,J=8.6Hz,6H),7.49(d,J=7.8Hz,6H),7.38(d,J=8.6Hz,6H),7.06(d,J=8.6Hz,6H),3.52(18H,s,OMe).13C NMR(100MHz,DMSO-d6,298K),δ(ppm):153.73,145.45,1342,132.45,127.59,125.23,123.15,115.34,110.58,103.31,54.88.(2) Tri(4-iodophenyl)amine (0.340 g, 0.55 mmol), 3,6-dimethoxycarbazole (0.50 g, 2.20 mmol), cuprous iodide (63 mg, 0.33 mmol), 1,10-phenanthroline (60 mg, 0.33 mmol), and potassium carbonate (0.61 mg, 4.42 mmol) were added to dry DMF (20 mL). The mixture was refluxed under argon protection, and the reaction was monitored by thin layer chromatography (TLC). After the reaction was completed, water was added to the reaction mixture, and the precipitate was filtered and washed with water and methanol several times. Purification by acetone crystallization gave 0.88 g of i-2 with a yield of 62%. The absorption and PL spectra are shown in FIG3 , and the NMR spectrum is shown in FIG8 . 1 H NMR (400MHz, DMSO-d 6 ,298K), δ (ppm): 7.84 (m, 6H), 7.61 (d, J = 8.6Hz, 6H), 7.49 (d, J = 7.8Hz, 6H), 7.38 (d, J = 8.6Hz, 6H), 7.06 (d, J = 8.6Hz, 6H), 3.52 (18H, s,OMe). 13 C NMR (100MHz, DMSO-d 6 ,298K), δ (ppm): 153.73, 145.45, 1342, 132.45, 127.59, 125.23, 123.15, 115.34, 110.58, 103.31, 54.88.
应用例3Application Example 3
基于咔唑基团修饰的有机小分子空穴传输材料的量子点发光二极管的制备过程。The preparation process of quantum dot light-emitting diodes based on organic small molecule hole transport materials modified with carbazole groups.
采用实施例1(i-1)、实施例2(i-2)的化合物作为空穴传输材料制备量子点发光二极管,图1为器件结构示意图,采用p-i-n结构。The compounds of Example 1 (i-1) and Example 2 (i-2) are used as hole transport materials to prepare quantum dot light-emitting diodes. Figure 1 is a schematic diagram of the device structure, which adopts a p-i-n structure.
器件结构为ITO/PEDOT:PSS/i-1或i-2/量子点/TPBi/LiF/AlThe device structure is ITO/PEDOT:PSS/i-1 or i-2/quantum dots/TPBi/LiF/Al
器件制备方法为:ITO玻璃先后用去离子水、乙醇、丙酮超声洗涤15min,然后把ITO再放入100℃的干燥箱中烘干(1h),使用前UVO处理20min。以4000rpm(60s)旋涂PEDOT:PSS作为空穴注入层,在空气中150℃退火15min。转移到氮气气氛的手套箱中。将5~15mg的i-1或i-2溶于1mL的氯苯中,搅拌至澄清,随后在手套箱中以2000rpm(60s)旋涂到PEDOT:PSS薄膜上,150℃退火15min。冷却后以2000rpm(60s)旋涂量子点。在4.0×10-4Pa压强下,通过热蒸发法先后在量子点层上蒸镀上40nm的TPBi以及1nm的LiF,最后蒸镀上一层100nm厚的铝电极。这就是整个量子点发光二极管的制备流程,发光二极管的最大有效面积为0.09cm2。The device preparation method is as follows: ITO glass is ultrasonically washed with deionized water, ethanol, and acetone for 15 minutes, and then ITO is placed in a drying oven at 100°C for drying (1 hour), and UVO treated for 20 minutes before use. PEDOT:PSS is spin-coated at 4000rpm (60s) as a hole injection layer, and annealed at 150°C in air for 15 minutes. Transfer to a glove box with a nitrogen atmosphere. 5-15 mg of i-1 or i-2 is dissolved in 1 mL of chlorobenzene, stirred until clear, and then spin-coated on the PEDOT:PSS film at 2000rpm (60s) in the glove box, and annealed at 150°C for 15 minutes. After cooling, quantum dots are spin-coated at 2000rpm (60s). At a pressure of 4.0× 10-4 Pa, 40nm of TPBi and 1nm of LiF are successively evaporated on the quantum dot layer by thermal evaporation, and finally a 100nm thick aluminum electrode is evaporated. This is the entire preparation process of quantum dot light-emitting diodes. The maximum effective area of the light-emitting diode is 0.09 cm2 .
在空气中对所制备的发光二极管的启亮电压、IVL曲线、发光效率进行测试。The turn-on voltage, IVL curve and luminous efficiency of the prepared light-emitting diode were tested in air.
图4为基于i-1或i-2的发光二极管的电流密度-电压-发光亮度曲线,图5为电流效率-电流密度曲线。最佳器件的启亮电压为2.75V,发光亮度为12476.04cd/m2,电流效率为57.1cd/A。图6为i-1和i-2作为空穴传输材料的量子点发光二极管的电致发光光谱图,两者电致发光光谱相似。Figure 4 is the current density-voltage-luminous brightness curve of the light-emitting diode based on i-1 or i-2, and Figure 5 is the current efficiency-current density curve. The turn-on voltage of the best device is 2.75V, the luminous brightness is 12476.04cd/ m2 , and the current efficiency is 57.1cd/A. Figure 6 is the electroluminescence spectrum of the quantum dot light-emitting diodes with i-1 and i-2 as hole transport materials, and the electroluminescence spectra of the two are similar.
上述内容对本发明的具体操作细节进行了描述,但其只是为了清晰完整地呈现本发明的应用实例,并非限定具体的实施方式。本领域研究人员可以在一定范围内做出各种补充或改进,并不影响本发明的实质内容。本发明中合成出的终产物并不局限于应用在量子点发光二极管领域,还可以应用于钙钛矿发光二极管、钙钛矿太阳能电池、有机太阳能电池和有机电致发光器件等其他领域。由于篇幅有限,这里不再对其进行阐述,但由此引申出来的一系列研究仍属于本发明的保护范围之内。The above content describes the specific operational details of the present invention, but it is only for the purpose of clearly and completely presenting the application examples of the present invention, and does not limit the specific implementation methods. Researchers in this field can make various supplements or improvements within a certain range, which does not affect the essential content of the present invention. The final product synthesized in the present invention is not limited to the application in the field of quantum dot light-emitting diodes, but can also be applied to other fields such as perovskite light-emitting diodes, perovskite solar cells, organic solar cells and organic electroluminescent devices. Due to limited space, it will not be elaborated here, but a series of studies derived therefrom still belong to the scope of protection of the present invention.
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