CN115548201A - Infrared light-emitting diode packaging structure and packaging method - Google Patents
Infrared light-emitting diode packaging structure and packaging method Download PDFInfo
- Publication number
- CN115548201A CN115548201A CN202210436089.0A CN202210436089A CN115548201A CN 115548201 A CN115548201 A CN 115548201A CN 202210436089 A CN202210436089 A CN 202210436089A CN 115548201 A CN115548201 A CN 115548201A
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- chip
- rod
- fixedly connected
- hinge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 44
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 230000003044 adaptive effect Effects 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 3
- 238000004382 potting Methods 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000008358 core component Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Landscapes
- Led Device Packages (AREA)
Abstract
Description
技术领域technical field
本发明涉及二极管技术领域,具体为一种红外发光二极管封装结构及封装方法。The invention relates to the technical field of diodes, in particular to an infrared light emitting diode packaging structure and packaging method.
背景技术Background technique
二极管又称晶体二极管,简称二极管,它是一种具有单向传导电流的电子器件。在半导体二极管内部有一个PN结两个引线端子,这种电子器件按照外加电压的方向,具备单向电流的转导性。一般来讲,晶体二极管是一个由p型半导体和n型半导体烧结形成的p-n结界面。在其界面的两侧形成空间电荷层,构成自建电场。当外加电压等于零时,由于p-n结两边载流子的浓度差引起扩散电流和由自建电场引起的漂移电流相等而处于电平衡状态,这也是常态下的二极管特性。几乎在所有的电子电路中,都要用到半导体二极管,它在许多的电路中起着重要的作用,其应用也非常广泛。Diodes, also known as crystal diodes, or diodes for short, are electronic devices that conduct current in one direction. There is a PN junction and two lead terminals inside the semiconductor diode. This electronic device has unidirectional current conduction according to the direction of the applied voltage. Generally speaking, a crystal diode is a p-n junction interface formed by sintering a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface to form a self-built electric field. When the applied voltage is equal to zero, the diffusion current caused by the carrier concentration difference on both sides of the p-n junction is equal to the drift current caused by the self-built electric field, and it is in a state of electrical balance, which is also the diode characteristic under normal conditions. In almost all electronic circuits, semiconductor diodes are used. It plays an important role in many circuits and has a wide range of applications.
现有的二极管通常是采用透明封胶一体浇筑而成,而在浇筑时,对二极管中的芯片、引脚、散热片组成的内核部件定位困难,导致二极管良品率不高。Existing diodes are usually integrally poured with transparent sealing glue, but during pouring, it is difficult to locate the core components of the diode, which consists of chips, pins, and heat sinks, resulting in a low yield of diodes.
发明内容Contents of the invention
针对现有技术的不足,本发明提供了一种红外发光二极管封装结构及封装方法,解决了上述背景技术中现有二极管采用透明封胶一体浇筑时,不易对二极管中的芯片、引脚组成的内核部件进行定位,使得二极管良品率不高的问题。Aiming at the deficiencies of the prior art, the present invention provides an infrared light-emitting diode packaging structure and packaging method, which solves the problem that the existing diodes in the above background technology are integrally poured with transparent sealing glue, which is not easy to damage the chips and pins in the diode. The positioning of the core components makes the problem that the yield rate of the diode is not high.
为实现以上目的,本发明通过以下技术方案予以实现:一种红外发光二极管封装结构,包括封装本体,所述封装本体包括:封装壳、反光斜面、芯片,所述芯片设置于所述反光斜面上,所述反光斜面上及所述芯片外设置有封装壳。In order to achieve the above object, the present invention is achieved through the following technical solutions: an infrared light-emitting diode packaging structure, including a packaging body, the packaging body includes: a packaging shell, a reflective slope, and a chip, and the chip is arranged on the reflective slope , an encapsulation shell is arranged on the reflective slope and outside the chip.
优选的,所述芯片下方设置有引脚,所述引脚与所述芯片电性连接。Preferably, pins are provided under the chip, and the pins are electrically connected to the chip.
优选的,所述反光斜面下方设置有绝缘层,所述绝缘层与所述反光斜面下表面之间填充有所述封装壳。Preferably, an insulating layer is provided under the reflective slope, and the encapsulation shell is filled between the insulating layer and the lower surface of the reflective slope.
优选的,所述引脚贯穿所述反光斜面,所述绝缘层上设置有引线,所述引线贯穿所述绝缘层与所述引脚电性连接。Preferably, the pins penetrate the reflective slope, and the insulating layer is provided with leads, and the leads penetrate the insulating layer and are electrically connected to the pins.
优选的,所述绝缘层为环氧玻璃纤维布层压板。Preferably, the insulating layer is an epoxy glass fiber cloth laminated board.
优选的,所述反光斜面上涂布有二氧化钛涂料。Preferably, titanium dioxide paint is coated on the reflective slope.
一种红外发光二极管封装结构的封装方法,包括:A packaging method for an infrared light emitting diode packaging structure, comprising:
步骤一:将绝缘层贯穿,使得引线固定于绝缘层被贯穿处;Step 1: penetrate the insulating layer so that the lead wire is fixed at the place where the insulating layer is penetrated;
步骤二:将反光斜面固定于绝缘层上方;Step 2: Fix the reflective slope on the insulating layer;
步骤三:贯穿反光斜面,且反光斜面被贯穿处与绝缘层被贯穿处位置对应;Step 3: penetrate the reflective slope, and the position where the reflective slope is penetrated corresponds to the position where the insulating layer is penetrated;
步骤四:将芯片固定于反光斜面上,且芯片下方设置的引脚位于反光斜面被贯穿处中,引脚与引线电性连接;Step 4: Fix the chip on the reflective slope, and the pins provided under the chip are located in the place where the reflective slope is penetrated, and the pins are electrically connected to the leads;
步骤五:对反光斜面、芯片进行灌封处理,形成封装壳;Step 5: Potting the reflective slope and the chip to form a packaging shell;
步骤六:对存在于绝缘层上的若干封装本体进行切割;Step 6: cutting a plurality of package bodies existing on the insulating layer;
步骤七:对封装本体进行测试。Step 7: Test the package body.
优选的,所述步骤六使用自适应切割装置对所述绝缘层上的若干封装本体进行切割。Preferably, in the sixth step, an adaptive cutting device is used to cut several package bodies on the insulating layer.
优选的,所述自适应切割装置包括:Preferably, the adaptive cutting device includes:
机架、直线电机、直线电机输出端、撑杆、第一滑槽、第一转轴、伸缩套筒、连动杆、滑块、第二滑槽、切割件;Frame, linear motor, output end of linear motor, support rod, first chute, first rotating shaft, telescopic sleeve, linkage rod, slider, second chute, cutting piece;
所述机架通过驱动装置带动移动;The frame is driven to move by a driving device;
所述机架上固定连接有所述直线电机;The linear motor is fixedly connected to the frame;
所述机架上端设置有所述第一滑槽,所述第一转轴沿所述第一滑槽左右滑动;The upper end of the frame is provided with the first chute, and the first rotating shaft slides left and right along the first chute;
若干所述撑杆通过所述第一转轴转动连接;Several of the struts are rotatably connected by the first rotating shaft;
位于所述机架左端的所述第一转轴与所述机架固定连接,位于所述机架左端的所述第一转轴与所述直线电机输出端左端固定连接;The first rotating shaft located at the left end of the frame is fixedly connected to the frame, and the first rotating shaft located at the left end of the frame is fixedly connected to the left end of the output end of the linear motor;
所述直线电机输出端右端与所述直线电机连接;The right end of the output end of the linear motor is connected to the linear motor;
若干所述第一转轴上均转动连接有所述伸缩套筒,所述伸缩套筒套接于所述连动杆上端外周;The telescopic sleeves are rotatably connected to several of the first rotating shafts, and the telescopic sleeves are sleeved on the outer periphery of the upper end of the linkage rod;
所述机架下端设置有所述第二滑槽;The lower end of the frame is provided with the second chute;
所述连动杆中段位置固定连接有所述滑块,所述滑块左右滑动连接于所述第二滑槽内;The middle section of the linkage rod is fixedly connected with the slider, and the slider is slid left and right and connected in the second chute;
所述连动杆下端固定连接有所述切割件。The lower end of the linkage rod is fixedly connected with the cutting member.
优选的,所述切割件包括:Preferably, the cutting parts include:
第一固定杆、第二固定杆、空洞、第一固定板、第二固定板、第一铰接件、弹簧、伸缩杆、第二铰接件、第三固定杆、铰接轴、第二转轴、切割刀头;First fixed rod, second fixed rod, cavity, first fixed plate, second fixed plate, first hinge, spring, telescopic rod, second hinge, third fixed rod, hinge shaft, second rotating shaft, cutting head;
所述第一固定杆上端与所述连动杆下端固定连接,所述第一固定杆下端与所述第二固定杆上端固定连接;The upper end of the first fixed rod is fixedly connected to the lower end of the linkage rod, and the lower end of the first fixed rod is fixedly connected to the upper end of the second fixed rod;
所述第一固定板上设置有所述空洞,所述第二固定杆贯穿所述空洞;The first fixing plate is provided with the cavity, and the second fixing rod passes through the cavity;
所述第二固定杆固定连接有所述第三固定杆上端,所述第三固定杆呈圆弧状;The second fixed rod is fixedly connected to the upper end of the third fixed rod, and the third fixed rod is arc-shaped;
所述第一固定板下侧固定连接有所述第二固定板;The lower side of the first fixing plate is fixedly connected with the second fixing plate;
所述第三固定杆中段位置通过所述铰接轴与所述第二固定板转动连接;The middle position of the third fixed rod is rotatably connected with the second fixed plate through the hinge shaft;
所述第三固定杆下端上表面固定连接有所述第二铰接件;The upper surface of the lower end of the third fixed rod is fixedly connected with the second hinge;
所述第一固定板下表面固定连接有所述第一铰接件;The first hinge is fixedly connected to the lower surface of the first fixing plate;
所述第一铰接件、第二铰接件之间转动连接有所述伸缩杆,所述伸缩杆外套接有所述弹簧,所述弹簧分别固定于所述第一铰接件下端、第二铰接件上端;The telescopic rod is rotatably connected between the first hinge part and the second hinge part, and the spring is connected to the outside of the telescopic rod, and the spring is respectively fixed on the lower end of the first hinge part and the second hinge part. upper end;
所述第二固定板下端通过所述第二转轴转动连接有所述切割刀头。The lower end of the second fixing plate is rotatably connected with the cutting head through the second rotating shaft.
附图说明Description of drawings
图1为本发明的结构示意图;Fig. 1 is a structural representation of the present invention;
图2为本发明的封装本体排列示意图;Fig. 2 is a schematic diagram of the arrangement of the package body of the present invention;
图3为本发明的本体结构仰视示意图;Fig. 3 is a schematic bottom view of the body structure of the present invention;
图4为本发明的自适应切割装置结构示意图;Fig. 4 is a structural schematic diagram of an adaptive cutting device of the present invention;
图5为本发明的切割件结构示意图。Fig. 5 is a schematic structural diagram of the cutting member of the present invention.
图中:1、封装本体;2、封装壳;3、反光斜面;4、芯片;5、引脚;6、引线;7、绝缘层;8、自适应切割装置;9、绝缘涂布装置;801、机架;802、直线电机;803、直线电机输出端;804、撑杆;805、第一滑槽;806、第一转轴;807、伸缩套筒;808、连动杆;809、滑块;810、第二滑槽;811、切割件;81101、第一固定杆;81102、第二固定杆;81103、空洞;81104、第一固定板;81105、第二固定板;81106、第一铰接件;81107、弹簧;81108、伸缩杆;81109、第二铰接件;81110、第三固定杆;81111、铰接轴;81112、第二转轴;81113、切割刀头。In the figure: 1. Package body; 2. Package shell; 3. Reflective slope; 4. Chip; 5. Pin; 6. Lead wire; 7. Insulation layer; 8. Adaptive cutting device; 9. Insulation coating device; 801, frame; 802, linear motor; 803, output end of linear motor; 804, strut; 805, first chute; 806, first rotating shaft; 807, telescopic sleeve; 808, linkage rod; block; 810, the second chute; 811, the cutting piece; 81101, the first fixed rod; 81102, the second fixed rod; 81103, the hollow; 81104, the first fixed plate; Hinge; 81107, spring; 81108, telescopic rod; 81109, second hinge; 81110, third fixed rod; 81111, hinge shaft; 81112, second shaft;
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
实施例1Example 1
请参阅图1-3,本发明提供一种技术方案:一种红外发光二极管封装结构,包括封装本体1,所述封装本体1包括:封装壳2、反光斜面3、芯片4,所述芯片4设置于所述反光斜面3上,所述反光斜面3上及所述芯片4外设置有封装壳2。Please refer to Figures 1-3, the present invention provides a technical solution: an infrared light-emitting diode packaging structure, including a
优选的,所述芯片4下方设置有引脚5,所述引脚5与所述芯片4电性连接。Preferably, pins 5 are provided under the
优选的,所述反光斜面3下方设置有绝缘层7,所述绝缘层7与所述反光斜面3下表面之间填充有所述封装壳2。Preferably, an insulating
优选的,所述引脚5贯穿所述反光斜面3,所述绝缘层7上设置有引线6,所述引线6贯穿所述绝缘层7与所述引脚5电性连接。Preferably, the
优选的,所述绝缘层7为环氧玻璃纤维布层压板。Preferably, the insulating
优选的,所述反光斜面3上涂布有二氧化钛涂料。Preferably, the
一种红外发光二极管封装结构的封装方法,所述封装方法包括:A packaging method for an infrared light emitting diode packaging structure, the packaging method comprising:
步骤一:将绝缘层7贯穿,使得引线6固定于绝缘层7被贯穿处;Step 1: penetrating the insulating
步骤二:将反光斜面3固定于绝缘层7上方;Step 2: Fix the
步骤三:贯穿反光斜面3,且反光斜面3被贯穿处与绝缘层7被贯穿处位置对应;Step 3: penetrate the
步骤四:将芯片4固定于反光斜面3上,且芯片4下方设置的引脚5位于反光斜面3被贯穿处中,引脚5与引线6电性连接;Step 4: Fix the
步骤五:对反光斜面3、芯片4进行灌封处理,形成封装壳2;Step 5: Potting the
步骤六:对存在于绝缘层7上的若干封装本体1进行切割;Step 6: cutting a plurality of
步骤七:对封装本体1进行测试。Step 7: Test the
上述方案的工作原理及有益效果:对绝缘层7打孔贯穿,使引线6固定于绝缘层7上,再将反光斜面3固定于绝缘层7上,对反光斜面3打孔贯穿,且反光斜面3被贯穿位置与绝缘层7被贯穿处位置对应,将芯片4固定于反光斜面3上,最后对其进行浇筑灌封,解决了现有发光二极管采用透明封胶一体浇筑时,不易对二极管中的芯片4、引脚5组成的内核部件进行定位,使得二极管良品率不高的问题。The working principle and beneficial effects of the above scheme: punch through the insulating
且设置反光斜面3对芯片4发出的光进行聚拢,保证了二极管的光学性能更为优异。In addition, the
实施例2Example 2
请参阅图4,在实施例1的基础上,所述步骤六使用自适应切割装置8对所述绝缘层7上的若干封装本体1进行切割。Please refer to FIG. 4 , on the basis of
所述自适应切割装置8包括:Described
机架801、直线电机802、直线电机输出端803、撑杆804、第一滑槽805、第一转轴806、伸缩套筒807、连动杆808、滑块809、第二滑槽810、切割件811;
所述机架801通过驱动装置带动移动;The
所述机架801上固定连接有所述直线电机802;The
所述机架801上端设置有所述第一滑槽805,所述第一转轴806沿所述第一滑槽805左右滑动;The upper end of the
若干所述撑杆804通过所述第一转轴806转动连接;Several of the
位于所述机架801左端的所述第一转轴806与所述机架801固定连接,位于所述机架801左端的所述第一转轴806与所述直线电机输出端803左端固定连接;The first
所述直线电机输出端803右端与所述直线电机802连接;The right end of the linear
若干所述第一转轴806上均转动连接有所述伸缩套筒807,所述伸缩套筒807套接于所述连动杆808上端外周;The
所述机架801下端设置有所述第二滑槽810;The lower end of the
所述连动杆808中段位置固定连接有所述滑块809,所述滑块809左右滑动连接于所述第二滑槽810内;The middle position of the
所述连动杆808下端固定连接有所述切割件811。The cutting
上述方案的工作原理及有益效果:对绝缘层7上的若干封装本体1进行切割,使得二极管分割为单个存在,在切割时,由于封装本体1的大小会随着不同型号、批次而发生变化,此时对于绝缘层7及封装本体1的切割装置也随之变化,增加了操作,降低了效率;The working principle and beneficial effects of the above scheme: cutting
使用自适应切割装置8,通过直线电机802、直线电机输出端803作用于机架801右端的第一转轴806上,使得第一转轴806在第一滑槽805内滑动,由于位于机架801左端的第一转轴806与机架801固定,所以在机架801右端的第一转轴806受直线电机802作用而移动的过程中,位于机架801左端的第一转轴806和位于机架801右端的第一转轴806之间的第一转轴806均随之移动,且相邻两个第一转轴806之间的距离始终相等,在直线电机802的作用下,相邻两个第一转轴806上通过伸缩套筒807、连动杆808连接的切割件811之间的距离也是相等的,当调整好切割件811之间的距离后对绝缘层7及封装本体1进行切割,减少了操作时间,提升了效率;Using the self-
通过伸缩套筒807、连动杆808进行连接,方便对连动杆808、切割件811整体进行拆卸维护。The
实施例3Example 3
请参阅图5,在实施例1-2的基础上,所述切割件811包括:Referring to Fig. 5, on the basis of Embodiment 1-2, the cutting
第一固定杆81101、第二固定杆81102、空洞81103、第一固定板81104、第二固定板81105、第一铰接件81106、弹簧81107、伸缩杆81108、第二铰接件81109、第三固定杆81110、铰接轴81111、第二转轴81112、切割刀头81113;First fixed
所述第一固定杆81101上端与所述连动杆808下端固定连接,所述第一固定杆81101下端与所述第二固定杆81102上端固定连接;The upper end of the first fixed
所述第一固定板81104上设置有所述空洞81103,所述第二固定杆81102贯穿所述空洞81103;The
所述第二固定杆81102固定连接有所述第三固定杆81110上端,所述第三固定杆81110呈圆弧状;The second fixed
所述第一固定板81104下侧固定连接有所述第二固定板81105;The lower side of the
所述第三固定杆81110中段位置通过所述铰接轴81111与所述第二固定板81105转动连接;The middle position of the
所述第三固定杆81110下端上表面固定连接有所述第二铰接件81109;The upper surface of the lower end of the third
所述第一固定板81104下表面固定连接有所述第一铰接件81106;The
所述第一铰接件81106、第二铰接件81109之间转动连接有所述伸缩杆81108,所述伸缩杆81108外套接有所述弹簧81107,所述弹簧81107分别固定于所述第一铰接件81106下端、第二铰接件81109上端;The
所述第二固定板81105下端通过所述第二转轴81112转动连接有所述切割刀头81113。The lower end of the
上述方案的工作原理及有益效果:在切割件811对绝缘层7及封装本体1进行切割时,切割刀头81113与绝缘层7接触,切割刀头81113受力,带动第一固定板81104、第二固定板81105围绕铰接轴81111发生偏转,在此过程中,伸缩杆81108缩短,弹簧81107压缩,第二固定杆81102在空洞81103内移动,通过弹簧81107压缩受力,保证了切割刀头81113对于绝缘层7的切割工程中始终受力,有效避免了设备在切割工程中的空转,保证了切割刀头81113对于绝缘层7的切割效果。The working principle and beneficial effects of the above scheme: when the cutting
实施例4Example 4
在实施例1-3的基础上,还包括二极管状态检测装置,所述二极管状态检测装置包括:On the basis of Embodiment 1-3, it also includes a diode state detection device, and the diode state detection device includes:
电流传感器,用于检测通过二极管的电流;A current sensor for detecting the current through the diode;
电压传感器,用于检测作用于二极管的电压;A voltage sensor for detecting the voltage applied to the diode;
第一计时器,所述第一计时器用于记录二极管的通电时长;A first timer, the first timer is used to record the energization time of the diode;
第二计时器,所述第二计时器用于记录二极管的存在时长;a second timer, the second timer is used to record the duration of the diode;
报警器,所述报警器用于报警;Alarm, the alarm is used for alarm;
控制器,所述控制器分别与所述电流传感器、电压传感器、第一计时器、第二计时器、报警器电性连接,所述控制器基于所述电流传感器、电压传感器、第一计时器、第二计时器控制报警器工作,包括:A controller, the controller is electrically connected to the current sensor, the voltage sensor, the first timer, the second timer, and the alarm, and the controller is based on the current sensor, the voltage sensor, and the first timer , The second timer controls the work of the alarm, including:
步骤1:所述控制器基于所述第一计时器、第二计时器及公式(1)得到二极管的状态效应指数:Step 1: The controller obtains the state effect index of the diode based on the first timer, the second timer and formula (1):
其中,A为二极管的状态效应指数,t1为所述第一计时器记录的二极管的通电时长,t2为所述第二计时器记录的二极管的存在时长,t0为单位时长,e为自然常数,取值2.72;Wherein, A is the state effect index of the diode, t1 is the energization duration of the diode recorded by the first timer, t2 is the existence duration of the diode recorded by the second timer, t0 is the unit duration, and e is Natural constant, value 2.72;
步骤2:所述控制器基于所述电流传感器、电压传感器、计数器及公式(2)计算二极管状态指数:Step 2: the controller calculates the diode state index based on the current sensor, voltage sensor, counter and formula (2):
其中,B为二极管状态指数,I为电流传感器检测的通过二极管的电流,U为电压传感器检测的作用于二极管的电压,W1为二极管的额定功率,W为二极管的最大功率,δ为二极管的电光转换效率;Among them, B is the state index of the diode, I is the current through the diode detected by the current sensor, U is the voltage acting on the diode detected by the voltage sensor, W1 is the rated power of the diode, W is the maximum power of the diode, and δ is the voltage of the diode Electro-optical conversion efficiency;
当所述二极管状态指数小于对应的预设的基准值时,所述控制器控制报警器进行报警。When the diode state index is less than the corresponding preset reference value, the controller controls the alarm to give an alarm.
式中,为基于二极管处于不同状态的时间得出的二极管的状态效应指数,为在二极管的功率处于二极管的最大功率内时,二极管的状态指数,当二极管的功率大于二极管的最大功率时,二极管被烧毁,此时二极管的状态指数为0。In the formula, is the state effect index of the diode based on the time the diode is in different states, is the state index of the diode when the power of the diode is within the maximum power of the diode. When the power of the diode is greater than the maximum power of the diode, the diode is burned, and the state index of the diode is 0 at this time.
假设,所述第一计时器记录的二极管的通电时长t1=3000min,所述第二计时器记录的二极管的存在时长t2=50000min,单位时长t0=1min,自然常数e=2.72,则通过上述可计算得到二极管的状态效应指数A=1。Assuming that the energization duration of the diode recorded by the first timer is t 1 =3000min, the existence duration of the diode recorded by the second timer is t2 =50000min, the unit duration t0 =1min, and the natural constant e=2.72, then Through the above calculation, the state effect index A=1 of the diode can be obtained.
电流传感器检测的通过二极管的电流I=0.1A,电压传感器检测的作用于二极管的电压U=5V,二极管的额定功率W1=1W,二极管的最大功率W=3W,二极管的电光转换效率δ=0.4,通过公式(2)计算得到二极管状态指数B=2.134(取小数点后三位),计算得到的二极管状态指数B=2.134未超出预设的基准值1,此时控制器不控制所述报警器发出报警提示。The current I=0.1A passing through the diode detected by the current sensor, the voltage U=5V applied to the diode detected by the voltage sensor, the rated power W 1 of the diode=1W, the maximum power W=3W of the diode, and the electro-optical conversion efficiency δ= 0.4, the diode state index B=2.134 (taking three decimal places after the decimal point) is calculated by formula (2), and the calculated diode state index B=2.134 does not exceed the
上述技术方案的有益效果为:通过设置第一计时器用于记录二极管的通电时长,设置第二计时器用于记录二极管的存在时长,通过第一计时器记录的二极管的通电时长、第二计时器记录的二极管的存在时长以及公式(1)来计算得到二极管的状态效应指数,同时,设置电流传感器用于检测通过二极管的电流、设置电压传感器用于检测作用于二极管的电压,然后根据公式(1)的计算结果、电流传感器检测的通过二极管的电流、电压传感器检测的作用于二极管的电压以及公式(2)可以计算得到二极管状态指数,当所述二极管状态指数小于预设的基准值时,所述控制器控制报警器报警,以通知使用人员,通过设置控制器控制报警器报警,增加了智能性。The beneficial effect of the above technical solution is: by setting the first timer to record the energization time of the diode, and setting the second timer to record the existence time of the diode, the energization time of the diode recorded by the first timer and the second timer record The existence time of the diode and the formula (1) are used to calculate the state effect index of the diode. At the same time, the current sensor is set to detect the current passing through the diode, and the voltage sensor is set to detect the voltage acting on the diode, and then according to the formula (1) The calculation result, the current through the diode detected by the current sensor, the voltage acting on the diode detected by the voltage sensor and the formula (2) can be calculated to obtain the diode state index. When the diode state index is less than the preset reference value, the The controller controls the alarm to alarm to notify the user, and the intelligence is increased by setting the controller to control the alarm to alarm.
在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制;术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性,此外,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or in a specific orientation. construction and operation, and therefore should not be construed as limiting the present invention; the terms "first", "second", and "third" are used for descriptive purposes only, and should not be construed as indicating or implying relative importance, and unless otherwise Clearly stipulated and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or a Electrical connection; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or device.
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications and substitutions can be made to these embodiments without departing from the principle and spirit of the present invention. and modifications, the scope of the invention is defined by the appended claims and their equivalents.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210436089.0A CN115548201B (en) | 2022-04-25 | 2022-04-25 | Infrared light-emitting diode packaging structure and packaging method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210436089.0A CN115548201B (en) | 2022-04-25 | 2022-04-25 | Infrared light-emitting diode packaging structure and packaging method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115548201A true CN115548201A (en) | 2022-12-30 |
CN115548201B CN115548201B (en) | 2024-01-05 |
Family
ID=84724558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210436089.0A Active CN115548201B (en) | 2022-04-25 | 2022-04-25 | Infrared light-emitting diode packaging structure and packaging method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115548201B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6625036B1 (en) * | 1999-08-31 | 2003-09-23 | Rohm Co., Ltd. | Infrared data communication module and method of making the same |
CN102315359A (en) * | 2010-06-29 | 2012-01-11 | 昆山旭扬电子材料有限公司 | LED (light emitting diode) packaging structure for improving optical efficiency |
CN102646774A (en) * | 2011-02-18 | 2012-08-22 | 奇力光电科技股份有限公司 | Light emitting diode element and manufacturing method thereof |
KR20130117107A (en) * | 2012-04-17 | 2013-10-25 | 서울반도체 주식회사 | Light emitting diode package |
KR101632144B1 (en) * | 2015-03-19 | 2016-06-21 | 서승환 | Apparatus and method for led package test |
KR20180048350A (en) * | 2016-11-02 | 2018-05-10 | 에임큐주식회사 | Aluminum infrared LED having a concave len |
-
2022
- 2022-04-25 CN CN202210436089.0A patent/CN115548201B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6625036B1 (en) * | 1999-08-31 | 2003-09-23 | Rohm Co., Ltd. | Infrared data communication module and method of making the same |
CN102315359A (en) * | 2010-06-29 | 2012-01-11 | 昆山旭扬电子材料有限公司 | LED (light emitting diode) packaging structure for improving optical efficiency |
CN102646774A (en) * | 2011-02-18 | 2012-08-22 | 奇力光电科技股份有限公司 | Light emitting diode element and manufacturing method thereof |
KR20130117107A (en) * | 2012-04-17 | 2013-10-25 | 서울반도체 주식회사 | Light emitting diode package |
KR101632144B1 (en) * | 2015-03-19 | 2016-06-21 | 서승환 | Apparatus and method for led package test |
KR20180048350A (en) * | 2016-11-02 | 2018-05-10 | 에임큐주식회사 | Aluminum infrared LED having a concave len |
Also Published As
Publication number | Publication date |
---|---|
CN115548201B (en) | 2024-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN203415815U (en) | Coaxial packaged refrigeration type laser tube core | |
CN104242048B (en) | Packaging structure of conduction-cooled stack semiconductor laser | |
CN105244756A (en) | Sintering fixture for micro channel semiconductor laser and sintering method thereof | |
CN102194973A (en) | Ultraviolet LED packaging structure and wafer-grade packaging method thereof | |
CN207796683U (en) | A kind of LED light convenient for adjusting height | |
CN202759153U (en) | High-thermal-load large-power semiconductor laser | |
CN115548201A (en) | Infrared light-emitting diode packaging structure and packaging method | |
CN203707177U (en) | LED ceramic packaging substrate capable of sensing temperature | |
CN205195040U (en) | Microchannel semiconductor laser's sintering anchor clamps | |
CN104979441B (en) | A kind of LED chip and preparation method thereof and LED display | |
CN106253644A (en) | Low-voltage, high-current Mosfet power model | |
CN216625600U (en) | Rectifier bridge stack and electronic equipment | |
CN201689898U (en) | Packaging structure of light-gathering solar cell | |
CN211700328U (en) | LED support, LED lamp pearl and LED lamps and lanterns | |
CN105305224B (en) | A kind of high power semiconductor lasers and its method for packing encapsulated using aluminum substrate | |
CN206038843U (en) | Structure failure mode video monitoring system among IGBT reliability test | |
CN103078477B (en) | Connection structure of intelligent power module terminal | |
CN211125631U (en) | Three-way anti-parallel silicon controlled module | |
CN201382377Y (en) | High-power LED | |
CN222564269U (en) | A COB structure device encapsulated with new materials | |
CN220303455U (en) | LED lamp bead packaged by injection molding | |
CN1167097C (en) | Thermovoltaic power type solid-state switch | |
CN219535161U (en) | Insulation type laser packaging structure | |
CN216528863U (en) | A high-power single-arm rectifier diode module | |
CN104900785A (en) | Led packaging structure and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A packaging structure and packaging method for infrared light-emitting diodes Granted publication date: 20240105 Pledgee: Bank of China Limited by Share Ltd. Heyuan branch Pledgor: Guangdong Xusheng Semiconductor Co.,Ltd. Registration number: Y2024980007312 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
CP03 | Change of name, title or address |
Address after: Building 1, Shenhe Chuangzhi Industrial Park, High-tech Development Zone, Heyuan City, Guangdong Province, 517000 Patentee after: Guangdong Xusheng Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: Building 1, Shenhe Chuangzhi Industrial Park, High-tech Development Zone, Heyuan City, Guangdong Province, 517000 Patentee before: Guangdong Xusheng Semiconductor Co.,Ltd. Country or region before: China |
|
CP03 | Change of name, title or address | ||
PM01 | Change of the registration of the contract for pledge of patent right |
Change date: 20241217 Registration number: Y2024980007312 Pledgor after: Guangdong Xusheng Optoelectronic Technology Co.,Ltd. Pledgor before: Guangdong Xusheng Semiconductor Co.,Ltd. |
|
PM01 | Change of the registration of the contract for pledge of patent right |