CN115542206A - Integrated sensor - Google Patents
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Abstract
The invention discloses an integrated sensor based on dynamic voltage control, which comprises: the magnetic sensor is formed as a magnetic multilayer film structure having magnetic anisotropy; the driver provides a magnetization direction switching condition for the magnetic sensor; the detector detects the magnetic field of the magnetic sensor and converts the state of the magnetic field conversion direction into an electric signal; and a feedback control unit for recording the magnetic sensor magnetic field switching direction state statistical information, modifying the magnetization direction switching condition according to the magnetic sensor magnetic field switching direction state statistical information, and issuing a change magnetization direction switching condition command to the driver, which converts the recorded magnetic sensor magnetic field direction switching state statistical information and the magnetization direction switching condition into an electric signal of an output result. The invention can improve the accuracy of the sensor based on the dynamic voltage, and has high dynamic range and large and reliable signal. The invention can be combined with other mechanisms to realize a multi-parameter sensor.
Description
Technical Field
The invention relates to the field of storage, in particular to an integrated sensor based on dynamic voltage control.
Background
The magnetic multilayer film is a metal magnetic multilayer film formed by alternately overlapping ferromagnetic layers and non-ferromagnetic layers. Usually has a giant magnetoresistance effect in which the thickness of each layer is on the order of nanometers. Spin Valve (SV) or Magnetic Tunnel Junction (MTJ) structures have been widely used in Magnetic Random Access Memories (MRAMs) and magnetic sensors.
Integrated temperature sensors are critical to the reliability of semiconductor devices. Conventional transistor-based temperature sensors are circuits (PTAT and CTAT) that are proportional or inverse to absolute temperature. These designs detect changes in transistor characteristics (e.g., threshold voltage) at different temperatures to extract absolute temperature. However, these designs typically involve non-CMOS transistor processes (e.g., BJTs), with limited sensitivity and variation issues as a challenge. Reference wikipedia: https:// wiki.
In recent years, integrated magnetic devices have been proposed as temperature sensors. Many of these designs are based on Magnetic Tunnel Junctions (MTJs). A Magnetic Tunnel Junction (MTJ) is a multilayer film composed of a magnetic layer, an insulating barrier, and another magnetic layer. One magnetic layer is free to change its magnetization (free layer) in response to a supplied bias voltage, and the other has a relatively fixed magnetization (fixed layer). The MTJ [ fig. 1a ] exhibits different resistances depending on the relative orientation of the two layers, e.g., a higher resistance (AP) when the two layers are anti-parallel and a lower resistance (P) when the two layers are parallel, which ratio is called the tunneling magneto-resistance ratio (TMR) [ fig. 1b ]. The resistance can be used to electrically characterize the magnetic state of the device.
There are two main types of designs for prior art MTJ based temperature sensors. The dynamic sensor detects changes in dynamic switching statistics such as probability and switching time (a function of temperature). The static sensor detects changes in static characteristics such as tunnel magneto-resistance ratio, saturation magnetization, or resistance with temperature.
The most widely used dynamic MRAM temperature sensor utilizes the thermal stability of the device for detection. The retention time (e.g., average switching time of the device) is exponential to the thermal stability, which is inversely proportional to the temperature, e.g.:
Retention_time＝a*e^(thermal_stability)
Thermal_stability＝energy_barrier/KbT
retention time = a ^ e ^ (thermal stability)
Thermal stability = energy barrier/KbT.
As the temperature changes, the holding time also changes, so the temperature map 2a can be extracted from the average time between switching events. An illustration of this is shown in figure 2 c. Due to the exponential relationship, the design has higher sensitivity. The disadvantage of this method is that the exponential relationship results in a small dynamic range and a slow speed, since small changes in temperature result in an exponential change in retention time. A design to address this problem applies Spin Transfer Torque (STT) bias Spin Orbit Torque (SOT) bias and detects switching probability under the bias, which can bias the switching probability, which is disclosed in [ magnetic tunnel junction as chip temperature sensor, scientific report, 2017 ].
Static MTJ temperature sensors typically detect changes in magnetic properties, such as US patent 20160104544A1 or US patent 7511990B2; as a magnetic tunnel junction for embedding a nano-structure temperature sensor, a physical journal is applied, and the temperature changes in 2018. Scanning can be performed at different bias voltages to improve accuracy, and static and dynamic methods can also be combined to improve accuracy. A challenge facing prior art feature-based MRAM sensors is their small signal; for example, the resistance shows less than 0.5% change per degree kelvin.
Little work has been done with temperature sensing using voltage controlled (VC-) MTJs. A voltage controlled MTJ refers to an MTJ whose magnetization can be adjusted by a voltage, typically to make the magnetization stronger or weaker. One previous work proposed detecting static AP state resistance changes and dynamic thermal stability changes to sense temperature and discussed the effects of sweeping through different detection voltages, which was disclosed in [ PMTJ temperature sensors using VC on IEEE circuit and system international seminars, 2019 ].
As mentioned previously, dynamic MTJ sensors have high sensitivity but low speed and small dynamic range. The static MTJ sensor has small signal and low speed. There is currently no system that has the capability of large signal, high speed, and large dynamic range. In order to achieve the desired goal, it is necessary to establish a feedback system.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In order to solve the defects in the prior art, the invention provides an integrated sensor based on dynamic voltage control, which comprises:
a magnetic sensor formed as a magnetic multilayer film structure having magnetic anisotropy;
a driver for providing a magnetization direction switching condition for the magnetic sensor;
a detector for detecting a state of a magnetic field switching direction of the magnetic sensor to be converted into an electric signal;
and a feedback control unit for recording the magnetic sensor magnetic field switching direction state statistical information, modifying the magnetization direction switching condition according to the magnetic sensor magnetic field switching direction state statistical information, and issuing a change magnetization direction switching condition command to the driver, which converts the recorded magnetic sensor magnetic field direction switching state statistical information and the magnetization direction switching condition into an electric signal of an output result.
Alternatively, the integrated sensor can be implemented based on the VCMA effect or a combination of VCMA (voltage controlled magnetic anisotropy), STT (spin torque transfer), SOT (mixed spin orbit torque), and other magnetic principles;
alternatively, the integrated sensor is formed as a MTJ or Hallbar structure.
Optionally, the integrated sensor, the magnetic sensor is an MTJ, and the magnetic sensor magnetic field switching direction state is characterized by a resistance;
the magnetic sensor is Hallbar, and the magnetic field conversion direction state of the magnetic sensor represents current or voltage.
Optionally, the integrated sensor, the magnetization direction switching condition comprises at least one of a voltage (V), a current (I) time (T), or a magnetic field (H).
Optionally, in the integrated sensor, the magnetic sensor magnetic field switching direction state statistical information is described based on time series, frequency and probability distribution statistics.
Illustratively, when the magnetization direction switching condition is a voltage, the statistical information of the state of the magnetic field switching direction of the magnetic sensor is the number of times of switching of the magnetization direction per second, which can be used for detecting a temperature;
and/or, when the magnetization direction switching condition is a bias field, the statistical information of the magnetic field switching direction state of the magnetic sensor is the percentage of the 0-state and the 1-state in the magnetization direction switching, which can be used for detecting a magnetic field;
therefore, the integrated sensor provided by the invention can be used for detecting temperature, detecting magnetic field or detecting temperature and magnetic field.
Optionally, the feedback control unit of the integrated sensor adopts the following control mechanism to modify the magnetization direction conversion condition;
s1, carrying out initial adjustment to adapt the magnetization direction conversion frequency and the thermal stability;
s2, providing a first magnetization direction conversion condition, obtaining a first conversion rate corresponding to the first magnetization direction conversion condition, judging whether the first conversion rate is equal to a first target conversion rate or not, and if not, adjusting the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;
s3, converting the first conversion rate and the corresponding first magnetization direction conversion condition to obtain an electric signal of an output result;
wherein when the first magnetization direction switching condition is a voltage, the first switching rate is a number of times per second the magnetization direction is switched;
alternatively, where the first magnetization direction switching condition is a bias field, the first switching rate is the percentage of 0 and 1 states in the magnetization direction switching.
Optionally, the feedback control unit of the integrated sensor adopts the following control mechanism to modify the magnetization direction conversion condition;
s1', carrying out initial adjustment to enable the magnetization direction conversion frequency to be adaptive to the thermal stability;
s2', providing a first magnetization direction conversion condition, obtaining a first conversion rate corresponding to the first magnetization direction conversion condition, judging whether the first conversion rate is equal to a first target conversion rate, and if not, adjusting the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;
s3', providing a second magnetization direction conversion condition, obtaining a second conversion rate corresponding to the second magnetization direction conversion condition, judging whether the second conversion rate is equal to a second target conversion rate, and if not, adjusting the second magnetization direction conversion condition until the second conversion rate is equal to the second target conversion rate;
s4', converting the first conversion rate and the corresponding first magnetization direction conversion condition thereof, and converting the second conversion rate and the corresponding second magnetization direction conversion condition thereof to respectively obtain electric signals of output results;
wherein the first magnetization direction switching condition is a voltage, the first switching rate is a number of switching times per second of the magnetization direction, the second magnetization direction switching condition is a bias field, and the second switching rate is a percentage of 0 and 1 states in the magnetization direction switching.
It should be further noted that there are many factors that affect the device characteristics, so that the sensor can accurately measure the result when other factors are fixed. Most features vary less and the magnetic field may have a greater effect. For example, when a very large applied magnetic field is applied, the device will be pinned in the magnetic field direction, which cannot be switched regardless of the temperature and applied voltage. Thus, the temperature and magnetic field can be more accurately characterized through the combined measurement of both the regulated voltage and the applied bias field.
It should be further noted that a combination of VCMA and SOT may be optionally used to implement the VC-SOT apparatus shown in fig. 3 of the present invention. In this design, the SOT current Ibias \ U SOT can be used in situ, or can be used with the bias condition Hbias to detect temperature and/or magnetic field. Other spin mechanisms such as VC skrymation, VC domain walls, etc. may also be employed. Multiple magnetic devices with different characteristics (e.g., different sized MTJs; different VC strengths, etc.) may be used together to improve speed and accuracy.
The invention can improve the accuracy of the sensor based on the dynamic Voltage (VC), and has high dynamic range and large and reliable signal. The invention can be combined with other mechanisms (such as VC-SOT, VC-Skyrmion and the like) to realize a multi-parameter sensor. The invention can at least realize the following technical effects:
(1) The ability to modulate thermal stability based on the VC effect;
(2) Dynamically switching to detect large signals that can be generated;
(3) A feedback system that locks the system and to a target value;
(4) Based on multiple device implementations with different characteristics (thermal stability, VCMA coefficient, etc.). Multi-parameter sensing can be achieved by having multiple different control signals and spin mechanisms. Dynamic balance is achieved between the detection signal, and the sensitivity and dynamic detection range.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1a is a schematic diagram of a Magnetic Tunnel Junction (MTJ) structure consisting of two magnetic layers separated by an insulating barrier, the device exhibiting low resistance when the two layers are magnetically aligned; if the other way around, the resistance is higher.
FIG. 1b is a second schematic diagram of a Magnetic Tunnel Junction (MTJ) structure with a high resistance (AP) when the two layers are anti-parallel and a low resistance (P) when the two layers are parallel, which ratio is referred to as the tunneling magneto-resistance ratio (TMR) which can be used to electrically characterize the magnetic state of the device.
FIG. 2a is a schematic diagram of the operation of the MTJ sensor showing the relationship between thermal stability and retention time and PMA and applied voltage.
FIG. 2b is a diagram illustrating the second operation mechanism of the dynamic MTJ sensor, and the simulation result shows the combination of thermal stability, retention time, and voltage.
Fig. 2c is a third schematic diagram of the operation mechanism of the dynamic MTJ sensor, showing the state fluctuation of the device under thermal noise, the average time of the fluctuation being the retention time.
Fig. 3 is a schematic view of the overall structure of the present invention.
FIG. 4a is a schematic diagram of a control mechanism of the feedback control unit according to the first embodiment of the present invention.
FIG. 4b is a schematic diagram of a control mechanism of the feedback control unit according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout the drawings. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
A first embodiment;
referring to fig. 3, the present invention provides an integrated sensor based on dynamic voltage control, comprising:
a magnetic sensor formed as a magnetic multilayer film structure with magnetic anisotropy, optionally based on VCMA, STT or SOT implementations, exemplarily formed as MTJ or Hallbar structures;
a driver for providing a magnetization direction switching condition for the magnetic sensor;
a detector for detecting a state of a magnetic field switching direction of the magnetic sensor to be converted into an electric signal;
a feedback control unit for recording the magnetic sensor magnetic field switching direction state statistical information, modifying the magnetization direction switching condition according to the magnetic sensor magnetic field switching direction state statistical information, and issuing a command to change the magnetization direction switching condition to the driver, which converts the recorded magnetic sensor magnetic field direction switching state statistical information and the magnetization direction switching condition into an electric signal of an output result;
optionally, when the magnetic sensor is an MTJ, the magnetic sensor magnetic field switching direction state is characterized by a resistance;
optionally, when the magnetic sensor is Hallbar, the magnetic field switching direction state of the magnetic sensor represents current or voltage.
A second embodiment;
with continued reference to fig. 3, the present invention provides an integrated sensor based on dynamic voltage control, comprising:
a magnetic sensor formed as a magnetic multilayer film structure with magnetic anisotropy, optionally based on VCMA, STT or SOT implementations, exemplarily formed as MTJ or Hallbar structures;
a driver for providing a magnetization direction switching condition for the magnetic sensor;
a detector for detecting a state of a magnetic field switching direction of the magnetic sensor to be converted into an electric signal;
a feedback control unit for recording the magnetic sensor magnetic field switching direction state statistical information, modifying the magnetization direction switching condition according to the magnetic sensor magnetic field switching direction state statistical information, and issuing a command to change the magnetization direction switching condition to the driver, which converts the recorded magnetic sensor magnetic field direction switching state statistical information and the magnetization direction switching condition into an electric signal of an output result;
optionally, when the magnetic sensor is an MTJ, the state of the magnetic field switching direction of the magnetic sensor is characterized by a resistance;
optionally, when the magnetic sensor is a Hallbar, the magnetic field switching direction state of the magnetic sensor represents current or voltage.
The magnetization direction conversion condition comprises at least one of voltage (V), current (I) time (T) or magnetic field (H), and correspondingly, the magnetization direction conversion condition can also be a combination of more than two kinds.
It should be further noted that, when the magnetization direction switching condition is voltage, the statistical information of the state of the magnetic field switching direction of the magnetic sensor is the switching times of the magnetization direction per second;
and/or when the magnetization direction switching condition is a bias field, the statistical information of the magnetic field switching direction state of the magnetic sensor is the percentage of the states of 0 and 1 in the magnetization direction switching.
Further, it will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, parameters, components, regions, layers and/or sections, these elements, parameters, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, parameter, component, region, layer or section from another element, parameter, component, region, layer or section. Thus, a first element, parameter, component, region, layer or section discussed below could be termed a second element, parameter, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
A third embodiment;
referring to fig. 4a, the present invention provides a mechanism for controlling a feedback control unit to modify the magnetization direction switching condition, which can be used in the structure of the first embodiment or the second embodiment;
s1, carrying out initial adjustment to enable the magnetization direction conversion frequency to be adaptive to thermal stability; for example, for magnetization direction switching frequencies on the order of nanoseconds, thermal stability decreases to between 0 and 10;
s2, providing a first magnetization direction conversion condition, obtaining a first conversion rate corresponding to the first magnetization direction conversion condition, judging whether the first conversion rate is equal to a first target conversion rate or not, and if not, adjusting the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;
if the first conversion rate is lower than the first target conversion rate, increasing the magnetization direction conversion condition parameter; if the detected conversion rate is higher than the first target conversion rate, reducing the magnetization direction conversion condition parameter;
s3, converting the first conversion rate and the corresponding first magnetization direction conversion condition to obtain an electric signal of an output result: for characterizing temperature or magnetic fields;
when the first magnetization direction conversion condition is voltage, the first conversion rate is the number of times of conversion of the magnetization direction per second and is used for representing the detection temperature;
alternatively, when the first magnetization direction switching condition is a bias field, the first switching rate is a percentage of 0 and 1 states in the magnetization direction switching, and is used to characterize the detection magnetic field.
Based on the control mechanism of the feedback control unit in the third embodiment, the statistical information of the magnetic field switching direction state of the magnetic sensor is described based on the statistics of time series, frequency and probability distribution, and the following example of adjusting voltage (the example of applying the bias field to detect the magnetic field has the same principle, and is not described again) is provided for further explanation as follows;
in the non-starting stage, the magnetization direction switching condition V _ bias =0, and the first switching rate f _ sw =0.2Hz is detected;
carrying out initial adjustment to adapt the magnetization direction conversion frequency and the thermal stability;
increasing V _ bias =0.1, detecting a first conversion rate f _ sw =2Hz;
continuing to increase V _ bias =0.2, detecting a first slew rate f _ sw =20Hz;
continuing to increase V _ bias =0.3, detecting a first slew rate f _ sw =200Hz;
……
continuing to increase V _ bias =0.9, detecting a first slew rate f _ sw =200Hz; in the case where the magnetization direction switching condition V _ bias is changed at least three times, it is detected that the first switching rate remains unchanged, and it is determined that the magnetization direction switching frequency and the thermal stability are suitable.
Providing a magnetization direction switching condition, V bias =0.89, detecting a first switching rate f sw =170MHz, which is less than a first target switching rate f target =100MHz; it should be further noted that f _ target is mainly determined according to the application scenario. The exemplary 100MHz employed is based on the core frequency of currently advanced MCUs. F _ target may be increased if the core frequency is higher; if the application scene does not need high performance, the f _ target can be reduced.
Reducing the magnetization direction switching condition, V _ bias =0.88, detecting a first switching rate f _ sw =130MHz, which is greater than a first target switching rate f _ target =100MHz;
reducing the magnetization direction switching condition, V bias =0.87, detecting a first switching rate f sw =100MHz, which is equal to a first target switching rate f target =100MHz;
v _ bias =0.87 corresponds to a temperature of 35 degrees celsius. It should be further noted that the temperature corresponding to V _ bias may vary with different device parameters. For a device with high thermal stability, V _ bias =0.87 would correspond to a higher temperature; for devices with low thermal stability, V _ bias =0.87 would correspond to a lower temperature.
When the first magnetization direction conversion condition is a bias field, the first conversion rate is the percentage of the states of 0 and 1 in the magnetization direction conversion, and can be used for detecting a magnetic field, and the adjustment process is similar and is not repeated;
a fourth embodiment;
referring to fig. 4b, the present invention provides a mechanism for controlling the mechanism of the feedback control unit to modify the magnetization direction switching condition, which can be used in the structure of the first embodiment or the second embodiment;
s1', carrying out initial adjustment to adapt the magnetization direction conversion frequency and the thermal stability;
s2', providing a first magnetization direction conversion condition, obtaining a first conversion rate corresponding to the first magnetization direction conversion condition, judging whether the first conversion rate is equal to a first target conversion rate, and if not, adjusting the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;
if the first conversion rate is lower than the first target conversion rate, increasing the first magnetization direction conversion condition parameter; if the first conversion rate is detected to be higher than the first target conversion rate, reducing the first magnetization direction conversion condition parameter;
s3', providing a second magnetization direction conversion condition, obtaining a second conversion rate corresponding to the second magnetization direction conversion condition, judging whether the second conversion rate is equal to a second target conversion rate, and if not, adjusting the second magnetization direction conversion condition until the second conversion rate is equal to the second target conversion rate;
illustratively, if it is detected that the second switching rate is higher than the second target switching rate, the second magnetization direction switching condition is increased; if the second conversion rate is detected to be lower than the second target conversion rate, reducing the second magnetization direction conversion condition;
the above exemplary adjustment is provided to explain that the system adjusts the magnetic field according to the switching frequency, and that increasing or decreasing the magnetic field above or below the target switching rate is possible, and that the measured conversion rate can be adjusted to be equal to the target switching rate by a limited number of magnetization direction switching conditions with a reasonable selection of the target switching rate;
s4', converting the first conversion rate and the corresponding first magnetization direction conversion condition thereof, and converting the second conversion rate and the corresponding second magnetization direction conversion condition thereof to respectively obtain electric signals of output results;
wherein the first magnetization direction switching condition is a voltage, the first switching rate is a number of switching times per second of the magnetization direction, the second magnetization direction switching condition is a bias field, and the second switching rate is a percentage of 0 and 1 states in the magnetization direction switching.
Based on the fourth embodiment feedback control unit control mechanism described above, the magnetic sensor magnetic field switching direction state statistical information is described based on time series, frequency and probability distribution statistics, and the following example (adjusting voltage and applying bias field) is provided for further explanation as follows;
in the non-starting stage, the magnetization direction switching condition V _ bias =0, and the first switching rate f _ sw =0.2Hz is detected;
carrying out initial adjustment to adapt the magnetization direction conversion frequency and the thermal stability;
increasing V _ bias =0.1, detecting a first slew rate f _ sw =2Hz;
continuing to increase V _ bias =0.2, detecting a first slew rate f _ sw =20Hz;
continuing to increase V _ bias =0.3, detecting a first slew rate f _ sw =200Hz;
continuing to increase V _ bias =0.9, detecting a first slew rate f _ sw =200Hz;
in the case where the magnetization direction switching condition V _ bias is changed at least three times, it is determined that the magnetization direction switching frequency is suitable for thermal stability when it is detected that the first switching rate remains unchanged.
Providing a magnetization direction switching condition, V bias =0.89, detecting a first switching rate f sw =170MHz, which is less than a first target switching rate f target =100MHz; it should be further noted that f _ target is mainly determined according to the application scenario. The exemplary 100MHz employed is based on the core frequency of currently advanced MCUs. F _ target may be increased if the core frequency is higher; if the application scene does not need high performance, the f _ target can be reduced. Decreasing V _ bias =0.89, detecting a first slew rate f _ sw =170Hz;
decreasing V _ bias =0.88, detecting a first slew rate f _ sw =130Hz;
decreasing V _ bias =0.87, detecting a first slew rate f _ sw =100Hz;
v _ bias =0.87 corresponds to a temperature of 35 degrees celsius; it should be further noted that the temperature corresponding to V _ bias may vary with different device parameters. For a device with high thermal stability, V _ bias =0.87 would correspond to a higher temperature; for devices with low thermal stability, V _ bias =0.87 would correspond to a lower temperature. V _ bias =0.87, f _ sw =100Hz.
Applying a bias field, hbias =0,p (1) =80%, the second conversion rate is lower than the second target conversion rate;
increasing Hbias =10, p (1) =78%, the second conversion rate being higher than the second target conversion rate;
increasing Hbias =20, p (1) =73%, the second conversion rate being higher than the second target conversion rate;
increasing Hbias =30, p (1) =72%, the second conversion rate being higher than the second target conversion rate;
increasing Hbias =40, p (1) =46%, the second conversion rate being lower than the second target conversion rate;
reducing Hbias =39, p (1) =47%, the second conversion rate being lower than the second target conversion rate;
reducing Hbias =38, p (1) =48%, the second conversion rate being lower than the second target conversion rate;
reduce Hbias =37, p (1) =49%, the second conversion rate equals 49% of the second target conversion rate;
decreasing Hbias =37 corresponds to detecting magnetic field 37.
The above parameters are used to illustrate the process of adjusting the second magnetization direction switching condition, and should not be construed as limiting the adjustment of the second magnetization direction switching condition.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (8)
1. An integrated sensor based on dynamic voltage control, comprising:
a magnetic sensor formed as a magnetic multilayer film structure having magnetic anisotropy;
a driver for providing a magnetization direction switching condition for the magnetic sensor;
a detector for detecting a state of a magnetic field switching direction of the magnetic sensor to be converted into an electric signal;
and a feedback control unit for recording the magnetic sensor magnetic field switching direction state statistical information, modifying the magnetization direction switching condition according to the magnetic sensor magnetic field switching direction state statistical information, and issuing a change magnetization direction switching condition command to the driver, which converts the recorded magnetic sensor magnetic field direction switching state statistical information and the magnetization direction switching condition into an electric signal of an output result.
2. The integrated sensor of claim 1, wherein: the magnetic sensor is implemented based on VCMA, STT or SOT.
3. The integrated sensor of claim 1, wherein: formed as MTJ or Hallbar structures.
4. The integrated sensor of claim 3, wherein:
the magnetic sensor is MTJ, and the magnetic field switching direction state of the magnetic sensor is represented as resistance;
the magnetic sensor is Hallbar, and the magnetic field conversion direction state of the magnetic sensor represents current or voltage.
5. The integrated sensor of claim 1, wherein the magnetization direction switching condition comprises at least one of a voltage (V), a current (I), a time (T), or a magnetic field (H).
6. The integrated sensor of claim 1, wherein:
the magnetic sensor magnetic field switching direction state statistical information is described based on time series, frequency and probability distribution statistics.
7. The integrated sensor of claim 1, wherein: the feedback control unit adopts the following control mechanism to modify the magnetization direction conversion condition;
s1, carrying out initial adjustment to adapt the magnetization direction conversion frequency and the thermal stability;
s2, providing a first magnetization direction conversion condition, obtaining a first conversion rate corresponding to the first magnetization direction conversion condition, judging whether the first conversion rate is equal to a first target conversion rate, and if not, adjusting the magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;
s3, converting the first conversion rate and the corresponding first magnetization direction conversion condition to obtain an electric signal of an output result;
wherein when the first magnetization direction switching condition is a voltage, the first switching rate is a number of times per second the magnetization direction is switched;
alternatively, where the first magnetization direction switching condition is a bias field, the first switching rate is the percentage of 0 and 1 states in the magnetization direction switching.
8. The integrated sensor of claim 1, wherein: the feedback control unit adopts the following control mechanism to modify the magnetization direction conversion condition;
s1', carrying out initial adjustment to adapt the magnetization direction conversion frequency and the thermal stability;
s2', providing a first magnetization direction conversion condition, obtaining a first conversion rate corresponding to the first magnetization direction conversion condition, judging whether the first conversion rate is equal to a first target conversion rate, and if not, adjusting the first magnetization direction conversion condition until the first conversion rate is equal to the first target conversion rate;
s3', providing a second magnetization direction conversion condition, obtaining a second conversion rate corresponding to the second magnetization direction conversion condition, judging whether the second conversion rate is equal to a second target conversion rate, and if not, adjusting the second magnetization direction conversion condition until the second conversion rate is equal to the second target conversion rate;
s4', converting the first conversion rate and the corresponding first magnetization direction conversion condition thereof, and converting the second conversion rate and the corresponding second magnetization direction conversion condition thereof to respectively obtain electric signals of output results;
wherein the first magnetization direction switching condition is a voltage, the first switching rate is a number of switching times per second of the magnetization direction, the second magnetization direction switching condition is a bias field, and the second switching rate is a percentage of states 0 and 1 in the magnetization direction switching.
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