CN115512639A - Self-adaptive driving circuit - Google Patents
Self-adaptive driving circuit Download PDFInfo
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- CN115512639A CN115512639A CN202211330073.8A CN202211330073A CN115512639A CN 115512639 A CN115512639 A CN 115512639A CN 202211330073 A CN202211330073 A CN 202211330073A CN 115512639 A CN115512639 A CN 115512639A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
A self-adaptive driving circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor and a C1 capacitor, wherein the grid electrode of the second transistor is connected with a driving signal before protection and the grid electrode of the first transistor, the drain electrode of the third transistor is connected with the source electrode of the second transistor, and the C1 capacitor is connected between the driving signal after protection and a module ground; the grid electrode of the fourth transistor is connected with the driving signal before protection, and the drain electrode of the fourth transistor is connected with the driving signal after protection; the drain electrode of the fifth transistor is connected with the source electrode of the sixth transistor, the self-adaptive driving circuit changes the loop impedance through state switching between the transistors, and meanwhile, the signal control of the driving structure is adopted to realize working and closing, so that the ringing phenomenon generated during signal turnover at high frequency is improved, a current discharge path is provided, and the stability of the circuit during rapid signal change is ensured.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a driving circuit capable of being self-adaptive.
Background
With the rapid development of electronic power technology, electronic products are used more and more widely in daily life, different types of power supply technologies are more and more mature, and the electronic products are developed towards the directions of small size, strong performance and low power consumption under the condition of realizing functions.
The switching power supply is the most common power supply application from direct current to direct current, but the traditional schottky diode rectification mode cannot meet the requirement of high efficiency, the synchronous rectification technology that a Metal-Oxide Semiconductor Field Effect Transistor (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET for short) with extremely low on-resistance replaces a schottky diode is more and more commonly applied, so that the loss of a converter can be reduced, the efficiency is improved, and the Metal-Oxide Semiconductor Field Effect Transistor is divided into a PMOS (P-channel type) tube and an NMOS (N-channel type) tube, and belongs to an insulated gate Field Effect tube.
In the switching power supply Circuit, a Printed Circuit Board (PCB for short) between a decoupling capacitor of a chip and a power supply pin of the chip is wired, the PCB between the power supply pins of the chip is wired, a binding line between the power supply pin of the chip and an internal silicon wafer can be equivalent to a parasitic inductor, and when a power MOS is cut off, a parasitic capacitor exists between each two electrodes. These parasitic inductances (denoted by letter L) and capacitances (denoted by letter C) form an LC resonant circuit, and the impedance of the MOS is usually made relatively small in order to improve the efficiency of the circuit, which means that the damping coefficient of the resonant circuit may be small. As a result, the switching of the Pulse Width Modulation (PWM) switch is accompanied by relatively large ringing.
In a circuit, various problems are often caused due to the presence of ringing, resulting in the circuit not functioning properly. In the signal loop, noise is introduced due to distortion of the signal caused by the presence of ringing. Second, the device is threatened by a spike caused by the amplitude of the ringing, and the device is damaged by the spike voltage exceeding the maximum voltage allowed by the device.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a self-adaptive driving circuit, and an effective means for reducing ringing is to add a resistor in the circuit, wherein the resistor provides damping for the circuit, and the damping can effectively reduce the amplitude of ringing and shorten the oscillation time without influencing the speed of the circuit. The circuit controls the working states of the first transistor and the sixth transistor through the control signal so as to influence the impedance of the upper loop and the lower loop, the oscillation generated during signal turnover when high frequency is improved, a current discharge path is provided, and the stability of the circuit when the signal changes rapidly is ensured.
The invention adopts the following technical scheme.
A self-adaptive driving circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor and a sixth transistor, wherein the grid electrode of the first transistor is connected with a driving signal before protection, the drain electrode of the first transistor is connected with the driving signal after protection, and the source electrode of the first transistor is connected with an in-module potential; the grid electrode of the second transistor is connected with the driving signal before protection and the grid electrode of the first transistor, and the drain electrode of the second transistor is connected with the driving signal after protection; the grid electrode of the third transistor is connected with the protected driving signal, the drain electrode of the third transistor is connected with the source electrode of the second transistor, and the source electrode of the third transistor is connected with the potential in the module; the grid electrode of the fourth transistor is connected with the driving signal before protection, the source electrode of the fourth transistor is connected with the internal power supply, and the drain electrode of the fourth transistor is connected with the driving signal after protection; the grid electrode of the fifth transistor is connected with the protected driving signal, the source electrode of the fifth transistor is connected with an internal power supply, and the drain electrode of the fifth transistor is connected with the source electrode of the sixth transistor; and the grid electrode of the sixth transistor is connected with the driving signal before protection, the source electrode of the sixth transistor is connected with the drain electrode of the fifth transistor, and the drain electrode of the sixth transistor is connected with the driving signal after protection.
Preferably, the capacitor also comprises a C1 capacitor; the C1 capacitor is connected between the protected drive signal and module ground.
Preferably, the driving signals for switching the signals to the first transistor gate, the third transistor gate, the fourth transistor gate and the fifth transistor gate are the same signal.
Preferably, the fifth transistor is the same size as the sixth transistor and is larger than the fourth transistor; the second transistor is the same size as the third transistor, and is larger than the first transistor.
Preferably, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are turned on or off according to the input signal.
Preferably, when the driving signal is switched from a high level to a low level, the first transistor, the second transistor and the third transistor play a role in protection; when the driving signal is switched from low level to high level, the fourth transistor, the fifth transistor and the sixth transistor play a protection role.
Preferably, the device further comprises a first branch and a second branch; the first branch circuit is a path from Vdd to a source electrode of a first transistor, from a drain electrode of the first transistor to a drain electrode of a fourth transistor, and from the source electrode of the fourth transistor to Vss; the second branch is from Vdd to the source of the second transistor, the drain of the second transistor to the source of the third transistor, the drain of the third transistor to the drain of the fifth transistor, the source of the fifth transistor to the drain of the sixth transistor, and the source of the sixth transistor to the Vss path.
Preferably, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor work cooperatively during signal conversion, the second branch circuit is not conducted during the first branch circuit access, the loop impedance is increased during work, the damping coefficient is increased, and ringing is reduced.
Preferably, in the process of switching the driving signal from the low level to the high level, when the driving signal is at the low level, the first transistor and the third transistor operate, the fourth transistor is disconnected from the fifth transistor, the second transistor is disconnected, and the sixth transistor operates, and at this time, no current flows through the first branch and the second branch; when the signal is formally established, the first branch circuit is the only path, the current flows through, the sixth transistor is disconnected, and the second branch circuit is disconnected.
Preferably, when the driving signal is switched from a high level to a low level, the fourth transistor, the fifth transistor and the sixth transistor are turned off, and the transistor in the first branch operates.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the switching of the two branch transistors can be controlled according to the high-low level switching of the driving signal, the two paths with different impedances are controlled by setting the reasonable transistor size to increase the damping coefficient of the circuit, the ringing caused by current oscillation caused by parasitic inductance is improved, and the logic of the circuit is ensured to be correct to determine the switching state of the power tube;
2. in the invention, a charge leakage path is formed by a parasitic inductor of the power MOS and the on-chip ground potential and the branches where the fifth transistor and the sixth transistor are located through a parasitic capacitor between the MOS grid and the source, so that the situation that the logic is uncertain due to the fluctuation of the chip ground potential caused by charge accumulation is avoided;
3. the loop impedance is changed by switching the states of the transistors, and the work and the closing are realized by adopting the signal control of the driving structure, so that the ringing phenomenon generated when the signal is turned over at high frequency is improved, a current leakage path is provided, and the stability of the circuit when the signal is changed rapidly is ensured;
4. the invention reduces the scale of the chip control circuit and saves the area under the condition of ensuring the stability of the driving signal without adding an additional control circuit.
Drawings
FIG. 1 is a schematic circuit diagram of an adaptive driving circuit according to the present invention;
FIG. 2 is a comparison diagram of the effect of the driving signals before and after an adaptive driving circuit according to the present invention;
in the figure:
1-a first branch; 2-a second branch; 3-a first transistor; 4-a second transistor; 5-a third transistor; 6-a fourth transistor; 7-a fifth transistor; 8-a sixth transistor; 9-C1 capacitance.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. The embodiments described in this application are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments obtained by a person skilled in the art without making any inventive step on the basis of the spirit of the present invention are within the scope of protection of the present invention.
The present application is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present application is not limited thereby.
Fig. 1 is a structural diagram of an adaptive driving circuit according to the present invention, which includes a first transistor 3, a second transistor 4, a third transistor 5, a fourth transistor 6, a fifth transistor 7, a sixth transistor 8, and a C1 capacitor 9.
The gate of the first transistor 3 is connected to the driving signal before protection, the drain is connected to the driving signal after protection, and the source is connected to the potential inside the module.
The gate of the second transistor 4 is connected to the driving signal before protection and the gate of the first transistor 3, the drain is connected to the driving signal after protection, and the source is connected to the drain of the third collector transistor.
The gate of the third collector transistor is connected to the protected drive signal, the drain is connected to the source of the second transistor 4, and the source is connected to the potential in the module.
The C1 capacitor 9 is a large capacitor between the protected drive signal and the module ground.
The gate of the fourth transistor 6 is connected to the driving signal before protection, the source is connected to the internal power supply, and the drain is connected to the driving signal after protection.
The gate of the fifth transistor 7 is connected to the protected drive signal, the source is connected to the internal power supply, and the drain is connected to the source of the sixth transistor 8.
The gate of the sixth transistor 8 is connected to the drive signal before protection, the source is connected to the drain of the fifth transistor 7, and the drain is connected to the drive signal after protection.
The driving signals which are switched into the grid electrode of the first transistor 3, the grid electrode of the third transistor 5, the grid electrode of the fourth transistor 6 and the grid electrode of the fifth transistor 7 are the same signals.
There is a corresponding ratio of the fourth transistor 6, the fifth transistor 7 and the sixth transistor 8 being of equal size and larger than the fourth transistor 6, the second transistor 4 and the third transistor 5 being of equal size and larger than the first transistor 3.
The circuit characteristic is represented by a common damping coefficient, and the formula is as follows:
LC resonant circuit damping coefficient:
wherein, f 0 At the resonant frequency, L is the parasitic inductance, C is the parasitic capacitance, and R is the equivalent resistance of the series resonance.
The damping coefficient of the LC resonance circuit is equal to 1, and the LC resonance circuit is critical damping and does not ring; the damping coefficient of the LC resonance circuit is less than 1, which is under damping and is accompanied with ringing; the damping coefficient of the LC resonance circuit is larger than 1, so that the damping is over-damped, the step signal jump is not accompanied with ringing, but the stability to the final value needs a longer time.
When the values of the parasitic capacitance and the inductance of the circuit are not changed, the resistance value of the loop is changed through the size of the transistor, so that the damping coefficient of the LC resonance circuit is adjusted.
The first transistor 3, the second transistor 4, the third transistor 5, the fourth transistor 6, the fifth transistor 7 and the sixth transistor 8 work or are turned off along with the change of the input signal, and when the signal is switched from a high level to a low level, the first transistor 3, the second transistor 4 and the third transistor 5 play a role in protection; when the signal is switched from low level to high level, the fourth transistor 6, the fifth transistor 7 and the sixth transistor 8 are protected. The six transistors work cooperatively when signals are converted, the second branch circuit 2 is not conducted when the first branch circuit 1 is connected, the loop impedance is increased during work, the damping coefficient is increased, and ringing is reduced.
The first branch is a path from Vdd to a source electrode 3 of the first transistor, from a drain electrode of the first transistor 3 to a drain electrode of the fourth transistor 6, and from a source electrode of the fourth transistor 6 to Vss; the second branch is Vdd to the source of the second transistor 4, the drain of the second transistor 4 to the source of the third transistor 5, the drain of the third transistor 5 to the drain of the fifth transistor 7, the source of the fifth transistor 7 to the drain of the sixth transistor 8, and the source of the sixth transistor 8 to the Vss path.
In a preferred but non-limiting embodiment, the driving signal after the protection circuit is input through the gates of the fourth transistor 6 and the fifth transistor 7, the gate of the sixth transistor 8 is connected with LG, and LG is a low-side power MOS switch control signal and is output after being acted by the protection circuit, and the driving signal has driving capability.
When the driving signal is switched from low level to high level, the first transistor 3 and the third transistor 5 operate, the fourth transistor 6 and the fifth transistor 7 are disconnected, the second transistor 4 is disconnected, the sixth transistor 8 operates, and no current flows through the first branch circuit 1 and the second branch circuit 2. When the driving signal changes from low level to high level, the fourth transistor 6 and the fifth transistor 7 operate, and the sixth transistor 8 is turned off. In the process of driving signal conversion, the situation that the fourth transistor 6, the fifth transistor 7 and the sixth transistor work simultaneously exists at a moment, most of current flows to the chip ground through the second branch circuit 2, a small part of current flows to the chip ground through the first branch circuit 1, and charges stored in the parasitic inductor are discharged through the second branch circuit 2 at the moment. When the signal is formally established, the first branch circuit 1 is the only path, the current flows, the sixth transistor 8 is disconnected, and the second branch circuit 2 is not connected. When the first branch circuit 1 is a path, the impedance is larger than that of the second branch circuit 2, so that compared with a driving circuit without the driving circuit, the damping coefficient of the LC resonance circuit is increased due to the large impedance after the signal is stable, and the ringing of the signal switched from low level to high level is improved.
When the driving signal is switched from high level to low level, the fourth transistor 6, the fifth transistor 7 and the sixth transistor 8 are turned off, and at this time, the transistor in the first branch 1 works, the impedance is larger than the impedance of the first branch 1 and the second branch 2 working simultaneously, so that the damping coefficient of the LC resonant circuit is increased, the ringing of the signal switched from high level to low level is improved, and the effect of improving the front and rear driving signals is shown in fig. 2.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the switching of the two branch transistors can be controlled according to the high-low level switching of the driving signal, the two paths with different impedances are controlled by setting the reasonable transistor size to increase the damping coefficient of the circuit, the ringing caused by current oscillation caused by parasitic inductance is improved, and the logic of the circuit is ensured to be correct to determine the switching state of the power tube;
2. in the invention, a charge leakage path is formed by a parasitic inductor of the power MOS and the on-chip ground potential and the branches where the fifth transistor and the sixth transistor are located through a parasitic capacitor between the MOS grid and the source, so that the situation that the logic is uncertain due to the fluctuation of the chip ground potential caused by charge accumulation is avoided;
3. the loop impedance is changed by switching the states of the transistors, and meanwhile, the work and the closing are realized by adopting the signal control of the driving structure, so that the ringing phenomenon generated when the signal is turned over at high frequency is improved, a current leakage path is provided, and the stability of the circuit when the signal is changed rapidly is ensured;
4. the invention reduces the scale of the chip control circuit and saves the area under the condition of ensuring the stability of the driving signal without adding an additional control circuit.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.
Claims (10)
1. An adaptive drive circuit comprising a first transistor (3), a second transistor (4), a third transistor (5), a fourth transistor (6), a fifth transistor (7), and a sixth transistor (8), characterized in that:
the grid electrode of the first transistor (3) is connected with a driving signal before protection, the drain electrode of the first transistor is connected with the driving signal after protection, and the source electrode of the first transistor is connected with an in-module electric potential;
the grid electrode of the second transistor (4) is connected with a driving signal before protection and the grid electrode of the first transistor (3), and the drain electrode of the second transistor is connected with the driving signal after protection;
the grid electrode of the third transistor (5) is connected with the protected driving signal, the drain electrode of the third transistor is connected with the source electrode of the second transistor (4), and the source electrode of the third transistor is connected with the potential inside the module;
the grid electrode of the fourth transistor (6) is connected with the driving signal before protection, the source electrode of the fourth transistor is connected with the internal power supply, and the drain electrode of the fourth transistor is connected with the driving signal after protection;
the grid electrode of the fifth transistor (7) is connected with the protected driving signal, the source electrode of the fifth transistor is connected with an internal power supply, and the drain electrode of the fifth transistor is connected with the source electrode of the sixth transistor (8);
and the grid electrode of the sixth transistor (8) is connected with the driving signal before protection, the source electrode of the sixth transistor is connected with the drain electrode of the fifth transistor, and the drain electrode of the sixth transistor is connected with the driving signal after protection.
2. An adaptive driving circuit according to claim 1, wherein:
further comprising a C1 capacitor (9);
the C1 capacitor (9) is connected between the protected drive signal and the module ground.
3. An adaptive driving circuit according to claim 1, wherein:
the driving signals which are switched in the grid electrode of the first transistor (3), the grid electrode of the third transistor (5), the grid electrode of the fourth transistor (6) and the grid electrode of the fifth transistor (7) are the same signals.
4. An adaptive driving circuit according to claim 1, wherein:
the fifth transistor (7) is the same size as the sixth transistor (8) and is larger than the fourth transistor (6);
the second transistor (4) is the same size as the third transistor (5) and is larger than the first transistor (3).
5. An adaptive driving circuit according to claim 1, wherein:
the first transistor (3), the second transistor (4), the third transistor (5), the fourth transistor (6), the fifth transistor (7) and the sixth transistor (8) work or are closed along with the change of the input signal.
6. An adaptive driving circuit according to claim 1, wherein:
when the driving signal is switched from high level to low level, the first transistor (3), the second transistor (4) and the third transistor (5) play a role in protection;
when the driving signal is switched from low level to high level, the fourth transistor (6), the fifth transistor (7) and the sixth transistor (8) play a protection role.
7. An adaptive driving circuit according to claim 1, wherein:
the device also comprises a first branch (1) and a second branch (2);
the first branch is from Vdd to a source electrode (3) of the first transistor, the drain electrode of the first transistor (3) is from a drain electrode of the fourth transistor (6), and the source electrode of the fourth transistor (6) is from a Vss path;
the second branch is from Vdd to the source of the second transistor (4), the drain of the second transistor (4) to the source of the third transistor (5), the drain of the third transistor (5) to the drain of the fifth transistor (7), the source of the fifth transistor (7) to the drain of the sixth transistor (8), and the source of the sixth transistor (8) to the Vss path.
8. An adaptive driving circuit according to claim 7, wherein:
the first transistor (3), the second transistor (4), the third transistor (5), the fourth transistor (6), the fifth transistor (7) and the sixth transistor (8) work cooperatively when signals are converted, the second branch circuit (2) is not conducted when the first branch circuit (1) is connected, the loop impedance is increased, the damping coefficient is increased, and ringing is reduced.
9. The use method of the adaptive driving circuit according to claim 7, wherein:
when the driving signal is switched from low level to high level, when the driving signal is low level, the first transistor (3) and the third transistor (5) work, the fourth transistor (6) and the fifth transistor (7) are disconnected, the second transistor (4) is disconnected, the sixth transistor (8) works, and no current flows through the first branch circuit (1) and the second branch circuit (2);
when the signal is formally established, the first branch circuit (1) is the only path, the current flows, the sixth transistor (8) is disconnected, and the second branch circuit (2) is not connected.
10. The use method of the adaptive driving circuit according to claim 8, wherein:
when the driving signal is switched from high level to low level, the fourth transistor (6), the fifth transistor (7) and the sixth transistor (8) are switched off, and the transistor of the first branch circuit (1) works at the moment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211330073.8A CN115512639A (en) | 2022-10-27 | 2022-10-27 | Self-adaptive driving circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211330073.8A CN115512639A (en) | 2022-10-27 | 2022-10-27 | Self-adaptive driving circuit |
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| CN115512639A true CN115512639A (en) | 2022-12-23 |
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| CN202211330073.8A Pending CN115512639A (en) | 2022-10-27 | 2022-10-27 | Self-adaptive driving circuit |
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- 2022-10-27 CN CN202211330073.8A patent/CN115512639A/en active Pending
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