CN115488095B - A method and device for cleaning silicon wafers with ozone - Google Patents

Abstract

The invention discloses an ozone cleaning method and device for silicon wafers, comprising the following steps: firstly, preparing a cleaning solution a in an inner tank body, and then immersing a silicon wafer placing basket containing silicon wafers into the inner tank body containing the cleaning solution a; then, injecting a cleaning solution b into a booster water pump, and then spraying it out from a nozzle at a high speed, the sprayed cleaning solution b and the cleaning solution a form a local vortex due to the pressure difference, so that the two are fully mixed and reacted to generate high-concentration hydroxyl; in the invention, the cleaning solution b is sprayed onto the surface of the silicon wafer immersed in the solution a through the nozzle, the two solutions are fully mixed on the surface of the silicon wafer to continuously generate high-concentration hydroxyl, thereby realizing the instant preparation and instant utilization of hydroxyl, solving the problem that hydroxyl is difficult to play a role due to the extremely short half-life in traditional ozone cleaning, giving play to the advantages of fast reaction rate and non-selectivity of hydroxyl and organic matter, and improving the cleaning efficiency and stability of ozone cleaning.

Description

A method and device for cleaning silicon wafers with ozone

Technical Field

The invention belongs to the technical field of silicon wafer cleaning, and in particular relates to an ozone cleaning method and device for silicon wafers.

Background technique

In the semiconductor manufacturing process, silicon wafers are generally used as device substrates. Their various performance parameters directly affect the performance of the devices, especially the surface cleanliness of the silicon wafers. Surface contamination often causes device performance degradation or even scrapping, affecting product stability and the yield rate of the production line. Therefore, the cleaning of silicon wafers is very important. Cleaning silicon wafers to achieve good cleaning effects is of great significance to improving the yield rate of the production line and the performance of devices.

In the prior art, chemical cleaning methods are usually used to clean silicon wafers. The traditional RCA method for cleaning silicon wafers involves the use and discharge of chemicals such as ammonia water, hydrogen peroxide, and potassium hydroxide, which causes great pollution to the environment. Ozone cleaning methods are widely used in the field of silicon wafer cleaning. Compared with the traditional RCA cleaning method, the ozone cleaning method for silicon wafers can not only reduce production costs, but also reduce the emission of harmful substances. It is a green and environmentally friendly cleaning method. The common ozone cleaning method is to introduce ozone into an aqueous solution containing hydrochloric acid or hydrofluoric acid. The concentration of ozone dissolved in water is generally 10-100ppm. The silicon wafer is immersed in this ozone-containing solution for cleaning to achieve the purpose of cleaning the silicon wafer.

There are two chemical reactions in ozone cleaning. One is the direct oxidation reaction of ozone on organic matter, which is the main reaction of ozone cleaning, but it has strong selectivity, that is, it can decompose some organic matter at a very fast rate, but the decomposition rate of some organic matter is extremely slow. This leads to the current ozone solution cleaning effect of silicon wafers is still somewhat different from the RCA method; the other is the reaction of ozone and hydroxyl ions in water or the conjugate base of hydrogen peroxide to generate hydroxyl groups with extremely strong oxidizing ability. Hydroxyl groups have high activity and can decompose organic matter indiscriminately, but it is also due to the high activity of hydroxyl groups that their half-decay period is extremely short. In the existing ozone cleaning method, the concentration of hydroxyl groups is extremely low and has no cleaning effect at all. For this reason, we propose an ozone cleaning method and device for silicon wafers.

Summary of the invention

The object of the present invention is to provide a method and device for cleaning silicon wafers with ozone to solve the problems raised in the above background technology.

To achieve the above object, the present invention provides the following technical solution: a method for cleaning a silicon wafer with ozone, comprising the following steps:

A. First, prepare the cleaning solution a in the inner tank, then put the silicon wafers into the silicon wafer basket, and then immerse the silicon wafer basket into the inner tank filled with the cleaning solution a for 10-40 seconds;

B. Then, pure water is transported to the booster water pump through the solution inlet for pressurization, and then is pressed into the injection pipe by the booster water pump, and then ejected from the nozzle at high speed. The pure water injection time lasts for 5-20 seconds, which is used to clean the injection cleaning mechanism;

C. Then, the cleaning solution b is injected into the booster pump through the solution inlet for pressurization, and then is pressed into the injection pipe by the booster pump, and then ejected from the nozzle at high speed. The ejected cleaning solution b and cleaning solution a form a local vortex due to the pressure difference, so that the two are fully mixed and reacted to generate high-concentration hydroxyl groups;

D. Then, the pure water is transported to the booster water pump through the solution inlet for pressurization, and then is pressed into the injection pipe by the booster water pump, and then ejected from the nozzle at high speed. The pure water injection time lasts for 5-20 seconds, which is used to clean the injection cleaning mechanism;

E. Next, the cleaning solution c is injected into the booster water pump for pressurization, and then is pressed into the injection pipe by the booster water pump, and then ejected from the nozzle at high speed. The injection time of the cleaning solution c lasts for 5-20 seconds;

F. Repeat the above steps B-E for 1 to N times, N ≥ 2. After the silicon wafers are cleaned, remove the silicon wafer basket from the inner tank, and then remove the silicon wafers from the silicon wafer basket;

G. Finally, pure water is transported to the booster water pump through the solution inlet for pressurization, and then pressed into the injection pipe by the booster water pump, and then ejected from the nozzle at high speed. The pure water injection time lasts for 5-20s, which is used to clean the injection cleaning mechanism.

Preferably, the cleaning solution a is a solution comprising ozone and HCL;

Among them, the ozone concentration is 10-100ppm, and the HCL concentration is 0.1%-1%;

The cleaning solution b is a KOH solution with a concentration of 0.05%-0.2%, a H2O2 solution with a concentration of 1%-10%, or a H2O2 alkaline solution with a concentration of 1%-10%;

And the cleaning solution b is an alkaline solution, pH 7-13;

The cleaning solution c is HF solution;

The concentration of HF solution is 0.05%-0.2%.

Preferably, in step C, the injection speed of the cleaning solution b is 0.5 m/s-5 m/s.

An ozone cleaning device for silicon wafers comprises a cleaning tank body, wherein the cleaning tank body is provided with a spray cleaning mechanism and a liquid circulation mechanism;

The liquid circulation mechanism is used to circulate the cleaning solution in the cleaning tank body, and circulate the cleaning solution back and forth between the cleaning tank body and the liquid circulation mechanism, and dissolve the ozone gas in the cleaning solution, and the ozone gas circulates from the cleaning solution to the cleaning tank body;

The spray cleaning mechanism is used to spray cleaning solution onto the silicon wafers in the cleaning tank body, and clean the silicon wafers in the cleaning tank body.

Preferably, the cleaning tank body comprises an outer tank body and an inner tank body arranged at the bottom of the outer tank body, and a horizontally distributed silicon wafer placement basket is arranged inside the inner tank body, and silicon wafers to be cleaned are placed on the silicon wafer placement basket;

The vertical height of the inner tank body is lower than the vertical height of the outer tank body.

Preferably, the liquid circulation mechanism comprises a circulation pump, an outer tank liquid outlet pipe connected to the input end of the circulation pump, and an inner tank liquid inlet pipe connected to the output end of the circulation pump;

The outer tank liquid outlet pipe is connected to the lower part of one side of the outer tank body and communicates with the interior of the outer tank body;

The inner tank liquid inlet pipe is connected to the middle part of the bottom of the inner tank body and communicates with the interior of the inner tank body.

Preferably, a gas-liquid mixer is provided on the liquid outlet pipe of the outer tank, an ozone inlet pipe is provided on the gas-liquid mixer, and the gas-liquid mixer is communicated with the liquid outlet pipe of the outer tank;

The gas-liquid mixer is used to mix and dissolve the ozone entering from the ozone inlet pipe and the cleaning solution entering from the outer tank liquid outlet pipe, and then the cleaning solution mixed and dissolved with ozone is transported to the circulation pump through the outer tank liquid outlet pipe.

Preferably, a horizontally distributed multi-porous flow equalizing plate is provided inside the inner tank body, and the multi-porous flow equalizing plate is arranged above the inner tank liquid inlet pipe and parallel to the bottom of the silicon wafer placement basket.

Preferably, the jet cleaning mechanism comprises a booster water pump, a jet pipe connected to the booster water pump, and a nozzle connected to the jet pipe, the nozzle is arranged inside the inner tank body, and the booster water pump is provided with a solution inlet;

The booster water pump pressurizes the solution entering the solution inlet and then delivers it to the nozzle through the spray pipe, and then the nozzle sprays the solution toward the silicon wafer in the inner tank body for cleaning.

Preferably, a plurality of the nozzles are provided, and the plurality of the nozzles are arranged at equal intervals between the multi-hole flow equalizing plate and the silicon wafer placement basket, and the spraying direction of the nozzles is parallel to the placement direction of the silicon wafers.

Compared with the prior art, the present invention has the following beneficial effects:

1. In the present invention, by injecting cleaning solution b into the spray cleaning mechanism, the sprayed cleaning solution b and the cleaning solution a in the tank are continuously mixed to continuously produce high concentrations of hydroxyl groups, which can maintain the hydroxyl concentration on the surface of the silicon wafer. The nozzle is set at a position close to the silicon wafer, and the two solutions react on the surface of the silicon wafer. The hydroxyl groups produced by the reaction can directly react with the organic matter on the surface of the silicon wafer, reducing the loss of high-concentration hydroxyl groups during the transportation process. The above measures solve the problem that hydroxyl groups are difficult to play a role in ozone cleaning due to their extremely short half-life. The characteristics of the fast and non-selective reaction rate of hydroxyl groups and organic matter are utilized to improve the cleaning efficiency and stability of ozone cleaning;

2. By injecting HF solution into the spray cleaning mechanism, the sprayed HF solution can corrode the silicon oxide layer produced by ozone oxidation on the silicon wafer, micro-etch the surface of the silicon wafer, separate the pollutants adsorbed on the surface of the silicon wafer from the silicon wafer, and remove the adsorbed impurities. The nozzle is set near the silicon wafer to reduce the loss of HF during the transportation process;

3. The present invention immerses the silicon wafer in high-concentration ozone water as a background solution for cleaning. Ozone in an acidic environment can obtain a higher ozone concentration and can effectively clean metal pollution and some organic matter in an acidic environment, further improving the cleaning effect;

4. The present invention introduces different cleaning solutions into ozone water, utilizes the synergistic effect of ozone solution and different cleaning solutions, and the cleaning process is continuously circulated in the inner tank, continuously performing decomposition-etching-decomposition cycle cleaning, thereby achieving stable and efficient cleaning.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic diagram of a three-dimensional structure of the present invention;

FIG2 is a schematic diagram of a three-dimensional structure of the present invention;

FIG3 is a schematic diagram of a front cross-sectional structure of the present invention;

FIG4 is a schematic diagram of the three-dimensional structure of the spray cleaning mechanism of the present invention;

FIG5 is a schematic side cross-sectional view of the present invention;

FIG6 is a schematic diagram of a silicon wafer cleaning process according to the present invention;

FIG. 7 is a comparison diagram of the cleaning solution b sprayed by the nozzle 13 of the present invention and the cleaning solution a before and after the reaction.

In the figure: 1. Inner tank body; 2. Silicon wafer placement basket; 3. Outer tank body; 4. Spray pipe; 5. Silicon wafer; 6. Booster water pump; 7. Ozone inlet pipe; 8. Gas-liquid mixer; 9. Outer tank liquid outlet pipe; 10. Inner tank liquid inlet pipe; 11. Multi-hole flow plate; 12. Circulation pump; 13. Nozzle; 14. Solution inlet.

Detailed ways

The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

Referring to FIG. 1 to FIG. 6 , the ozone cleaning method for silicon wafers provided by the present invention comprises the following steps:

A. First, prepare solution a in the inner tank 1, then put the silicon wafer 5 into the silicon wafer placement basket 2, and then immerse the silicon wafer placement basket 2 containing the silicon wafer 5 into the inner tank 1 filled with the cleaning solution a for 10-40 seconds;

Cleaning solution a is a solution including ozone and HCL;

Among them, the ozone concentration is 10-100ppm, and the HCL concentration is 0.1%-1%;

The present invention immerses the silicon wafer 5 in high-concentration ozone water with a pH of 3-6 as a background solution for cleaning. Ozone in an acidic environment can obtain a higher ozone concentration and can effectively clean metal pollution and some organic matter in an acidic environment, further improving the cleaning effect.

B. Then, pure water is delivered to the booster water pump 6 through the solution inlet 14 for pressurization, and then is pressed into the injection pipe 4 by the booster water pump 6, and then is ejected from the nozzle 13 at high speed. The pure water injection time lasts for 5-20 seconds, and is used to clean the injection cleaning mechanism;

C. Then, the cleaning solution b is injected into the booster pump 6 through the solution inlet 14 for pressurization, and then is pressed into the injection pipe 4 by the booster pump 6, and then is injected out from the nozzle 13 at high speed. The injected cleaning solution b and the cleaning solution a form a local vortex due to the pressure difference, so that the two are fully mixed and reacted to generate high-concentration hydroxyl groups;

The cleaning solution b is a KOH solution with a concentration of 0.05%-0.2%, a H2O2 solution with a concentration of 1%-10%, or a H2O2 alkaline solution with a concentration of 1%-10%;

And the cleaning solution b is an alkaline solution, pH 7-13;

The injection speed of the cleaning solution b is 0.5m/s-5m/s, and the flow rate can be constant, or the flow rate can be changed during the injection process or injected in a pulse injection mode;

As shown in FIG. 7 , in the present invention, by injecting the cleaning solution b into the spray cleaning mechanism, the sprayed cleaning solution b and the cleaning solution a are fully mixed to generate a high concentration of hydroxyl groups. The nozzle 13 is arranged at a position close to the silicon wafer 5, and can directly react with the organic matter on the silicon wafer 5, thereby reducing the loss of the high concentration of hydroxyl groups during the transportation process, solving the problem of the extremely short half-life and low utilization rate of the high concentration of hydroxyl groups, and can effectively clean and remove the organic pollutants on the silicon wafer 5, thereby improving the cleaning efficiency.

D. Then, the pure water is transported to the booster water pump 6 through the solution inlet 14 for pressurization, and then is pressed into the injection pipe 4 by the booster water pump 6, and then is ejected from the nozzle 13 at high speed. The pure water injection time lasts for 5-20 seconds, and is used to clean the injection cleaning mechanism;

E. Next, the cleaning solution c is injected into the booster water pump 6 for pressurization, and then is pressed into the injection pipe 4 by the booster water pump 6, and then is ejected from the nozzle 13 at high speed. The injection time of the cleaning solution c lasts for 5-20 seconds;

The cleaning solution c is HF solution;

The concentration of HF solution is 0.05%-0.2%;

By injecting HF solution into the spray cleaning mechanism, the sprayed HF solution can corrode the silicon oxide layer produced by ozone oxidation on the silicon wafer 5, micro-etch the surface of the silicon wafer 5, so that the pollutants adsorbed on the surface of the silicon wafer 5 are separated from the silicon wafer, and the adsorbed impurities are removed. The nozzle 13 is set at a position close to the silicon wafer 5 to reduce the loss of HF during the transportation process.

F. Repeat the above steps B-E for 1 to N times, N≥2, and the silicon wafer 5 is cleaned. The silicon wafer placement basket 2 is taken out from the inner tank body 1, and then the silicon wafer 5 is taken out from the silicon wafer placement basket 2;

The present invention introduces different cleaning liquids into the ozone water, utilizes the synergistic effect of the ozone solution and the different cleaning liquids, and the cleaning process is continuously circulated in the inner tank body 1, and the engraving-decomposition cycle cleaning is continuously performed, thereby achieving stable and efficient cleaning;

G. Finally, the pure water is transported to the booster water pump 6 through the solution inlet 14 for pressurization, and then pressed into the injection pipe 4 by the booster water pump 6, and then ejected from the nozzle 13 at high speed. The pure water injection time lasts for 5-20 seconds, which is used to clean the injection cleaning mechanism.

The following table is a comparison table of silicon wafer performance parameters using the ozone cleaning method of the present invention and the traditional ozone cleaning method:

The silicon wafers compared in the following table are p-type silicon wafers of the same batch with a size of 182*182, which are divided into two groups, one group is silicon wafers using the ozone cleaning method of the present invention, and the other group is silicon wafers using the traditional ozone cleaning method. After cleaning, the silicon wafers are mounted on solar cells for performance testing;

It can be seen from the above comparison table that the efficiency of the solar cell made from the silicon wafer using the ozone cleaning method of the present invention is 0.15% higher than that of the solar cell made from the silicon wafer using the traditional ozone cleaning method, wherein the open circuit voltage is 3mv higher. The higher the open circuit voltage, the less the recombination caused by surface contamination. Therefore, the ozone cleaning method of the present invention has a better cleaning effect on silicon wafers than the traditional method.

As shown in FIGS. 1 to 5 , an ozone cleaning device for silicon wafers provided by the present invention comprises a cleaning tank body, wherein the cleaning tank body comprises an outer tank body 3 and an inner tank body 1 arranged at the bottom of the inner part of the outer tank body 3, wherein a horizontally distributed silicon wafer placing basket 2 is arranged inside the inner tank body 1, and silicon wafers 5 to be cleaned are placed on the silicon wafer placing basket 2, wherein the vertical height of the inner tank body 1 is lower than the vertical height of the outer tank body 3, and a spray cleaning mechanism and a liquid circulation mechanism are arranged on the cleaning tank body;

The liquid circulation mechanism is used to circulate the cleaning solution in the cleaning tank body, and circulate the cleaning solution back and forth between the cleaning tank body and the liquid circulation mechanism, and dissolve the ozone gas in the cleaning solution, and the ozone gas circulates from the cleaning solution to the cleaning tank body;

The liquid circulation mechanism includes a circulation pump 12, an outer tank liquid outlet pipe 9 connected to the input end of the circulation pump 12, and an inner tank liquid inlet pipe 10 connected to the output end of the circulation pump 12, the outer tank liquid outlet pipe 9 is connected to the lower part of one side of the outer tank body 3, and is communicated with the interior of the outer tank body 3, the inner tank liquid inlet pipe 10 is connected to the middle part of the bottom of the inner tank body 1, and is communicated with the interior of the inner tank body 1, a gas-liquid mixer 8 is arranged on the outer tank liquid outlet pipe 9, an ozone inlet pipe 7 is arranged on the gas-liquid mixer 8, and the gas-liquid mixer 8 is communicated with the outer tank liquid outlet pipe 9, the gas-liquid mixer 8 is used to mix and dissolve the ozone entering from the ozone inlet pipe 7 and the cleaning solution entering from the outer tank liquid outlet pipe 9, and then the cleaning solution mixed and dissolved with ozone is transported from the outer tank liquid outlet pipe 9 to the circulation pump 12, and a horizontally distributed multi-porous flow equalizing plate 11 is arranged inside the inner tank body 1, and the multi-porous flow equalizing plate 11 is arranged above the inner tank liquid inlet pipe 10 and parallel to the bottom of the silicon wafer placement basket 2;

The spray cleaning mechanism is used to spray the cleaning solution to the silicon wafer 5 in the cleaning tank body, and clean the silicon wafer 5 in the cleaning tank body;

The spray cleaning mechanism includes a booster water pump 6, a spray pipe 4 connected to the booster water pump 6, and a nozzle 13 connected to the spray pipe 4. The nozzle 13 is arranged inside the inner tank body 1. The booster water pump 6 is provided with a solution inlet 14. The booster water pump 6 pressurizes the solution entering the solution inlet 14 and transports it to the nozzle 13 through the spray pipe 4. The solution is then sprayed to the silicon wafer 5 in the inner tank body 1 by the nozzle 13 for cleaning. A plurality of nozzles 13 are provided. The plurality of nozzles 13 are arranged at equal intervals between the multi-hole flow equalizing plate 11 and the silicon wafer placement basket 2, and the spraying direction of the nozzle 13 is parallel to the placement direction of the silicon wafer 5.

The ozone cleaning device for silicon wafers provided by the present invention, when in use, places the silicon wafer 5 in the silicon wafer placing basket 2, and then immerses it in the inner tank body 1 containing the cleaning solution, and then injects ozone into the gas-liquid mixer 8 through the ozone inlet pipe 7, the gas-liquid mixer 8 mixes and dissolves the ozone entering from the ozone inlet pipe 7 with the cleaning solution entering from the outer tank liquid outlet pipe 9, and then the mixed and dissolved cleaning solution with ozone is transported from the outer tank liquid outlet pipe 9 to the circulation pump 12, the circulation pump 12 circulates the cleaning solution dissolved with ozone to the inner tank body 1, the cleaning solution dissolved with ozone will be uniformly transported to the silicon wafer 5 through the porous flow equalizing plate 11, at this time, the cleaning solution is injected into the booster water pump 6 from the solution inlet 14, the booster water pump 6 pressurizes the solution entering from the solution inlet 14 and transports it to the nozzle 13 through the injection pipe 4, and then the nozzle 13 sprays it to the silicon wafer 5 in the inner tank body 1 for cleaning.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims (2)

1. An ozone cleaning device for silicon wafers, characterized in that it comprises a cleaning tank body, on which a spray cleaning mechanism and a liquid circulation mechanism are provided; The liquid circulation mechanism is used to circulate the cleaning solution in the cleaning tank body, and circulate the cleaning solution back and forth between the cleaning tank body and the liquid circulation mechanism, and dissolve the ozone gas in the cleaning solution, and the ozone gas circulates from the cleaning solution to the cleaning tank body; The spray cleaning mechanism is used to spray a cleaning solution onto the silicon wafer (5) in the cleaning tank body, and clean the silicon wafer (5) in the cleaning tank body; The cleaning tank body comprises an outer tank body (3) and an inner tank body (1) arranged at the bottom of the inner tank body (3); a horizontally distributed silicon wafer placement basket (2) is arranged inside the inner tank body (1); silicon wafers (5) to be cleaned are placed on the silicon wafer placement basket (2); The vertical height of the inner tank body (1) is lower than the vertical height of the outer tank body (3); The liquid circulation mechanism comprises a circulation pump (12), an outer tank liquid outlet pipe (9) connected to an input end of the circulation pump (12), and an inner tank liquid inlet pipe (10) connected to an output end of the circulation pump (12); The outer tank liquid outlet pipe (9) is connected to the lower part of one side of the outer tank body (3) and is in communication with the interior of the outer tank body (3); The inner tank liquid inlet pipe (10) is connected to the middle of the bottom of the inner tank body (1) and communicates with the interior of the inner tank body (1); A gas-liquid mixer (8) is arranged on the outer tank liquid outlet pipe (9), an ozone inlet pipe (7) is arranged on the gas-liquid mixer (8), and the gas-liquid mixer (8) is in communication with the outer tank liquid outlet pipe (9); The gas-liquid mixer (8) is used to mix and dissolve the ozone entering from the ozone inlet pipe (7) and the cleaning solution entering from the outer tank liquid outlet pipe (9), and then transport the mixed and dissolved cleaning solution with ozone from the outer tank liquid outlet pipe (9) to the circulation pump (12); A horizontally distributed multi-hole flow balancing plate (11) is arranged inside the inner tank body (1), and the multi-hole flow balancing plate (11) is arranged above the inner tank liquid inlet pipe (10) and parallel to the bottom of the silicon wafer placement basket (2); The jet cleaning mechanism comprises a booster water pump (6), a jet pipe (4) connected to the booster water pump (6), and a nozzle (13) connected to the jet pipe (4); the nozzle (13) is arranged inside the inner tank (1); and the booster water pump (6) is provided with a solution inlet (14); The booster water pump (6) pressurizes the solution entering the solution inlet (14) and transports the pressurized solution to the nozzle (13) through the spray pipe (4), and then the nozzle (13) sprays the pressurized solution toward the silicon wafer (5) in the inner tank body (1) for cleaning; A plurality of the nozzles (13) are provided, and the plurality of the nozzles (13) are arranged at equal intervals between the multi-hole flow equalizing plate (11) and the silicon wafer placement basket (2), and the spraying direction of the nozzles (13) is parallel to the placement direction of the silicon wafers (5). 2. A method for cleaning silicon wafers with ozone, using the silicon wafer cleaning device as claimed in claim 1, characterized in that it comprises the following steps: A. First, a cleaning solution a is prepared in the inner tank body (1), and then the silicon wafer (5) is placed in the silicon wafer placement basket (2), and then the silicon wafer placement basket (2) containing the silicon wafer (5) is immersed in the inner tank body (1) filled with the cleaning solution a, and the immersion time is 10-40 seconds; B. Then, pure water is delivered to the booster water pump (6) through the solution inlet (14) for pressurization, and then is pressed into the injection pipe (4) by the booster water pump (6), and then ejected from the nozzle (13) at high speed. The pure water injection time lasts for 5-20 seconds, and is used to clean the injection cleaning mechanism; C. Then, the cleaning solution b is injected into the booster pump (6) through the solution inlet (14) for pressurization, and then is pressed into the injection pipe (4) by the booster pump (6), and then ejected from the nozzle (13) at high speed. The ejected cleaning solution b and the cleaning solution a form a local vortex due to the pressure difference, so that the two are fully mixed and reacted to generate a high concentration of hydroxyl groups; In step C, the injection speed of the cleaning solution b is 0.5 m/s-5 m/s; D. Then, the pure water is transported to the booster water pump (6) through the solution inlet (14) for pressurization, and then is pressed into the injection pipe (4) by the booster water pump (6), and then ejected from the nozzle (13) at high speed. The pure water injection time lasts for 5-20 seconds, and is used to clean the injection cleaning mechanism; E. Next, the cleaning solution c is injected into the booster water pump (6) for pressurization, and then is pressed into the injection pipe (4) by the booster water pump (6), and then is ejected from the nozzle (13) at high speed. The injection time of the cleaning solution c lasts for 5-20 seconds; F. Repeat the above steps B-E 1 to N times, N ≥ 2, until the silicon wafer (5) is cleaned, remove the silicon wafer placement basket (2) from the inner tank body (1), and then remove the silicon wafer (5) from the silicon wafer placement basket (2); G. Finally, the pure water is transported to the booster water pump (6) through the solution inlet (14) for pressurization, and then is pressed into the injection pipe (4) by the booster water pump (6), and then ejected from the nozzle (13) at high speed. The pure water injection time lasts for 5-20 seconds, and is used to clean the injection cleaning mechanism; Wherein, the cleaning solution a is a solution including ozone and HCL; Ozone concentration is 10-100ppm, HCL concentration is 0.1%-1%; The cleaning solution b is a KOH solution with a concentration of 0.05%-0.2%, a H2O2 solution with a concentration of 1%-10%, or a H2O2 alkaline solution with a concentration of 1%-10%; And the cleaning solution b is an alkaline solution, pH 7-13; The cleaning solution c is HF solution; The concentration of HF solution is 0.05%-0.2%.