CN115478249B - 一种铜铟镓硒溅射用的防着板及其制备方法和重复使用方法 - Google Patents
一种铜铟镓硒溅射用的防着板及其制备方法和重复使用方法 Download PDFInfo
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- CN115478249B CN115478249B CN202211145495.8A CN202211145495A CN115478249B CN 115478249 B CN115478249 B CN 115478249B CN 202211145495 A CN202211145495 A CN 202211145495A CN 115478249 B CN115478249 B CN 115478249B
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 33
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 196
- 230000007704 transition Effects 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000002344 surface layer Substances 0.000 claims abstract description 58
- 230000004888 barrier function Effects 0.000 claims abstract description 56
- 230000003746 surface roughness Effects 0.000 claims abstract description 34
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims abstract description 32
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 28
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims description 41
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 20
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000005488 sandblasting Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 239000006004 Quartz sand Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims description 6
- 238000004064 recycling Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims 2
- 230000007797 corrosion Effects 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 17
- 239000000853 adhesive Substances 0.000 abstract description 13
- 230000001070 adhesive effect Effects 0.000 abstract description 13
- 239000007789 gas Substances 0.000 abstract description 4
- 231100000331 toxic Toxicity 0.000 abstract description 4
- 230000002588 toxic effect Effects 0.000 abstract description 4
- 229910000058 selane Inorganic materials 0.000 abstract description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 37
- 239000011259 mixed solution Substances 0.000 description 25
- 229910000619 316 stainless steel Inorganic materials 0.000 description 15
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000010963 304 stainless steel Substances 0.000 description 10
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 229910017604 nitric acid Inorganic materials 0.000 description 8
- 239000002893 slag Substances 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005237 degreasing agent Methods 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000013527 degreasing agent Substances 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910000975 Carbon steel Inorganic materials 0.000 description 2
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 2
- 239000005750 Copper hydroxide Substances 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000010962 carbon steel Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001956 copper hydroxide Inorganic materials 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
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- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
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- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
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Abstract
本发明公开了一种铜铟镓硒溅射用的防着板及其制备方法和重复使用方法,所述防着板由下至上依次包括:基板、阻挡层、过渡层、表面层,其结构简单且设置合理巧妙,阻挡层的存在增加了基板的表面粗糙度和耐腐蚀性,提升了防着板的耐腐蚀性,并利于防着板结构中的过渡层的附着;过渡层的存在增加了表面层附着力,过渡层可与硫酸铜溶液反应而使过渡层与阻挡层分离以便除去防着板表面的附着物;表面层的存在增加了防着板表面的粗糙度,提升溅射过程中对溅射物的粘附力;本发明提供的铜铟镓硒溅射用的防着板提升了防着板表层粘附溅射物的能力,该结构便于溅射后及时清理附着物,避免大量有毒硒化氢气体的生产,提升了防着板非溅射区域的抗腐蚀能力。
Description
技术领域
本发明属于溅射技术领域,具体涉及一种铜铟镓硒溅射用的防着板及其制备方法和重复使用方法。
背景技术
在真空溅镀过程中,由电子在电场的作用下加速飞向基片的过程中与氩原子发生碰撞,电离出大量的氩离子和电子,电子飞向基片。氩离子在电场的作用下加速轰击靶材,溅射出大量的靶材原子,呈中性的靶原子(或分子)沉积在基片上成膜,而最终达到对基片表面镀膜的目的。二次电子在加速飞向基片的过程中受到磁场洛仑磁力的影响,被束缚在靠近靶面的等离子体区域内,该区域内等离子体密度很高,二次电子在磁场的作用下围绕靶面作圆周运动,该电子的运动路径很长,在运动过程中不断的与氩原子发生碰撞电离出大量的氩离子轰击靶材,经过多次碰撞后电子的能量逐渐降低,摆脱磁力线的束缚,远离靶材,最终沉积在基片上,但是少量会沉积在真空室内壁表面,影响其清洁。
为此,现有技术中通常在溅射机的结构中加入防着板来防止在真空溅镀的过程中,溅射出的靶材原子或大尺寸的颗粒沉积在真空室内壁表面。但是目前现有技术中公开的防着板存在以下缺陷:1.在大功率溅射条件下容易出现掉渣现象,形成阴阳极短路或放电引起的打弧现象。2.在铜铟镓硒蒸馏或溅射工艺结束后,防着板附着物不易脱落,而未及时清除防着板上残留的铜铟镓硒附着物引起硒化氢有毒气体的生成。3.在铜铟镓硒制程工艺中,因极强的腐蚀性而导致防着板被腐蚀。
发明内容
为解决上述技术问题,本发明提供了一种铜铟镓硒溅射用的防着板及其制备方法,所述防着板的结构合理简单,且结构中的过渡层配合使用硫酸铜溶解液来实现使用后的防着板快速除去表面溅射物,避免了防着板上附着物长时间暴露在空气中形成有毒有害的气体。
本发明还提供了所述铜铟镓硒溅射用的防着板的重复使用方法,该方法可简单方便的实现对于防着板的重复使用。
为实现上述目的,本发明采取的技术方案如下:
本发明提供的一种铜铟镓硒溅射用的防着板,所述防着板由下至上依次包括:基板、阻挡层、过渡层、表面层。
所述阻挡层的下表面与基板的上表面接触,上表面与过渡层的下表面接触;所述过渡层的上表面与表面层的下表面接触。
所述阻挡层的表面积同基板的表面积;所述过渡层的表面积同防着板被溅射区域的面积,所述表面层的表面积同过渡层的表面积。
所述基板的表面粗糙度为5~20μm,优选为10μm;通过向基板表面喷射粒径为1-4mm的石英砂、氧化铝、氮化硅中的一种或多种形成上述的粗糙度。
所述基板的材质为铁、碳刚、不锈刚、铝、合金中的一种或多种,优选为304不锈钢,其耐腐蚀好,且成本较一般合金低廉。
所述阻挡层的材质为不锈钢,阻挡层选择使用表面粗糙的耐腐蚀性材料,可防止来自外部的腐蚀作用对基板的影响,并且可以增加基板的表面粗糙度,提升后续过渡层的附着力。
所述阻挡层的材质优选为316不锈钢,其耐腐蚀性比304不锈刚突出,且成本较其他耐腐蚀材料如特殊合金、贵金属等成本低。
所述阻挡层的表面粗糙度Ra为25~50μm,这样的粗糙度可提升后续过渡层的附着力。
所述阻挡层的厚度为0.2~0.5mm;所述阻挡层的附着力不低于20MPa。
所述过渡层的材质选用熔点低且化学性质稳定的金属或非金属,过渡层的存在可提升表面层的附着力,降低表面层被溅射后掉渣的概率。
所述过渡层为铝层,优选为纯铝层,其熔点低,易加工,且容易与硫酸铜溶液反应而与阻挡层分离,进而利于防着板使用后对于表面层表面附着的附着物的清理,以利于将防着板快速进行重复利用。
所述过渡层的表面粗糙度Ra为35~80μm,这样的粗糙度可提升后续表面层的附着力。
所述过渡层的厚度为0.2~0.5mm,且为了节省成本,过渡层只需覆盖溅射区域的面积即可。
所述表面层为石英砂、氧化铝、氮化硅中的一种或多种,这些材料形成的表面层均具有高的粗糙度。
所述表面层优选为氧化铝,其化学性质稳定,在溅射的进程中,不会发生任何的化学反应。
所述表面层的表面粗糙度Ra为35~80μm,优选为64μm,这样的粗糙度能满足溅射过程中对溅射物的粘附力,如果粗糙度过高会引起溅射物对防着板表面层的冲击掉渣。
所述铜铟镓硒溅射用的防着板优选为由下至上依次包括:不锈钢基板、不锈钢层、铝层、氧化铝层。
所述铜铟镓硒溅射用的防着板更优选为由下至上依次包括:304不锈钢基板、316不锈钢层、铝层、氧化铝层。
本发明还提供了所述的铜铟镓硒溅射用的防着板的制备方法,所述制备方法包括以下步骤:
(1)对基板依次进行喷砂处理、清洗;
(2)在清洗后的基板表面喷涂不锈钢颗粒形成阻挡层;
(3)在阻挡层之上的溅射区域喷涂熔点低且化学性质稳定的金属或非金属,形成过渡层;
(4)在过渡层之上涂镀石英砂、氧化铝、氮化硅中的一种或多种,形成表面层。
步骤(1)中,具体包括以下步骤:
(1-1)喷砂:采用粒径1-4mm石英砂、氧化铝、氮化硅中的一种或多种,通过喷砂设备用0.4-0.7MPa对基板进行喷射表面处理,提升基板表面粗糙度Ra至5~20μm,优选Ra为10μm;
(1-2)脱脂:按脱脂剂制造商推荐的操作条件,浸于不锈钢合金工业用碱性脱脂剂中;
(1-3)冲洗:用电阻率不低于200KΩ/cm2的常温水冲洗,优选高压喷淋,将脱脂剂从难以清洗的地方去除,如盲孔,焊缝;
(1-4)酸腐蚀:在室温下浸泡于硝酸/氢氟酸混合液中2至3分钟;硝酸/氢氟酸混合液由70%质量分数的硝酸溶液、50%质量分数的氢氟酸溶液与去离子水按照20:3:77的体积比组成;
(1-5)冲洗:用电阻率不低于200KΩ/cm2的常温水冲洗,优选高压喷淋,将酸溶液从难以清洗的地方去除,如盲孔,焊缝;
(1-6)酸洗:在室温下,用70%质量分数的的硝酸溶液与去离子水按照体积比1:1组成的混合溶液浸泡3-10分钟;
(1-7)冲洗:用电阻率不低于200KΩ/cm2的常温水冲洗,优选高压喷淋;
(1-8)去离子水洗:在室温下用电阻率不低于2MΩ/cm2的去离子水冲洗,时长5-10分钟;
(1-9)热冲洗:浸入40-45℃且电阻率不低于1MΩ/cm2/去离子水中,持续5-10分钟;
(1-10)去离子水洗:用去离子水喷雾冲洗部件足够时间;
(1-11)烘干:通过烘干设备在氮气保护下进行烘干。
步骤(2)中,所述喷涂采用电弧喷涂的方式。
步骤(3)中,所述喷涂为电弧喷涂或熔射喷涂中的一种。
步骤(4)中,所述涂镀采用喷砂方式。
本发明还提供了所述铜铟镓硒溅射用的防着板的重复使用方法,所述重复使用方法包括以下步骤:
S1、向所述的铜铟镓硒溅射用的防着板的表面喷射可腐蚀过渡层的溶解液至防着板的过渡层与隔离层分离,得到含有阻挡层的基板;
S2、对含有阻挡层的基板进行清洗;
S3、重复上述铜铟镓硒溅射用的防着板的制备方法的步骤(3)和步骤(4)即可将防着板重新投入使用。
所述可腐蚀过渡层的溶解液为质量浓度为0.02~0.03mg/mL的硫酸铜溶液,优选为质量浓度为0.025mg/mL的硫酸铜溶液。
本发明提供的铜铟镓硒溅射用的防着板由下至上依次包括:基板、阻挡层、过渡层、表面层,其结构简单且设置合理巧妙,阻挡层的存在增加了基板的表面粗糙度和耐腐蚀性,提升了防着板的耐腐蚀性,并利于防着板结构中的过渡层的附着;过渡层的存在增加了表面层附着力,且过渡层选用了易与硫酸铜溶液反应的材质铝,这样在对使用后的防着板进行回收再使用的时候,过渡层可与硫酸铜溶液反应而使过渡层与阻挡层分离以便除去防着板表面的附着物;表面层的存在增加了防着板表面的粗糙度,提升溅射过程中对溅射物的粘附力。
本发明提供的铜铟镓硒溅射用的防着板在使用之后表面层上存在的吸附物会影响防着板的继续使用,通过向表面有附着物的防着板喷射硫酸铜溶液,会在隔离层与过渡层衔接位置形成第一混合液,过滤层与表面层衔接位置形成第二混合液,第一混合液和第二混合液包含多种物质:主要为硫酸铜、硫酸铝、硫酸、氢氧化铝、氢氧化铜,如图2所示。发生的化学反应如下:2Al+3CuSO4==Al2(SO4)3+3Cu。
上述具体反应进程如下:硫酸铜溶液通过对表面层的渗透,在表面层与过渡层的连接处进行化学反应形成剥离并形成含多种物质的第二混合液,第二混合液与硫酸铜溶液再形成对薄厚度的过渡层的腐蚀,进而引起第二混合液与硫酸铜溶液渗透通过过渡层达到过渡层与阻挡层的接触处,造成此区域发生同过渡层与表面层接合处相同的化学反应生成第一混合液,进而引起此区域结构上的剥离形成机械结构上的分离,即过渡层同阻挡层/表面层的分离,进而可应用于使用后的防着板附着物的剥离。
在本发明的一个技术方案中,通过设置铝层作为过渡层来增加整个防着板镀层的附着力;通过先在基板上电弧喷涂一层316不锈刚颗粒来提升表面粗糙度,避免直接在基本上镀层造成基板多次使用后尺寸偏差;通过在基板上设置316不锈钢层可提升整个防着板的抗腐蚀能力;通过以铝层作为过渡层,再配合使用硫酸铜溶解液来实现使用后的防着板快速除去表面溅射物,避免了防着板上附着物长时间暴露在空气中形成有毒有害的气体。
与现有技术相比,本发明具有以下优点:
本发明提供的铜铟镓硒溅射用的防着板提升了防着板表层粘附溅射物的能力,该结构便于溅射后及时清理附着物,避免附着物长时间存在而导致大量有毒硒化氢气体的生产,提升了防着板非溅射区域的抗腐蚀能力。
附图说明
图1为本发明中的铜铟镓硒溅射用的防着板的结构示意图;
图2为本发明中的铜铟镓硒溅射用的防着板在硫酸铜溶液中的反应示意图;
图3为本发明中的铜铟镓硒溅射用的防着板在硫酸铜溶液中的渗透示意图;
图4为本发明中的铜铟镓硒溅射用的防着板的制作过程图;
其中,1-基板、2-阻挡层、3-过渡层、4-表面层、41-低谷、42-顶峰、5-溶解液、6-混合液、61-第一混合液、62-第二混合液。
具体实施方式
本发明提供的一种铜铟镓硒溅射用的防着板,所述防着板由下至上依次包括:基板(1)、阻挡层(2)、过渡层(3)、表面层(4);所述阻挡层的下表面与基板的上表面接触,上表面与过渡层的下表面接触;所述过渡层的上表面与表面层的下表面接触。
所述阻挡层的表面积同基板的表面积;所述过渡层的表面积同防着板被溅射区域的面积,所述表面层的表面积同过渡层的的表面积。
所述基板的材质为铁、碳刚、不锈刚、铝、合金中的一种或多种,优选为304不锈钢,其耐腐蚀好,且成本较一般合金低廉。
所述阻挡层的材质为不锈钢,优选为316不锈钢,其耐腐蚀性比304不锈刚突出,且成本较其他耐腐蚀材料如特殊合金、贵金属等成本低。
所述基板的表面粗糙度Ra为5~20μm,这样的粗糙度可提升阻挡层的附着力。
所述阻挡层的表面粗糙度Ra为25~50μm,这样的粗糙度可提升后续过渡层的附着力;所述阻挡层的厚度为0.2~0.5mm。
所述过渡层的材质选用熔点低且化学性质稳定的金属或非金属,过渡层的存在可提升表面层的附着力,降低表面层被溅射后掉渣的概率。
所述过渡层为铝层,优选为纯铝层,其熔点低,易加工,且容易与硫酸铜溶液反应而与阻挡层分离,进而利于防着板使用后对于表面层表面附着的附着物的清理,以利于将防着板快速进行重复利用。
所述过渡层的表面粗糙度Ra为35~80μm,这样的粗糙度可提升后续表面层的附着力。
所述过渡层的厚度为0.2~0.5mm,且为了节省成本,过渡层只需覆盖溅射区域的面积即可。
所述表面层为石英砂、氧化铝、氮化硅中的一种或多种,这些材料形成的表面层均具有高的粗糙度。表面层的结构示意图如图3所示,包括图中所示低谷(41)和顶峰(42)及顶峰与顶峰之间的距离决定表面层表面的粗糙度,合适的粗糙度才能满足溅射过程中对溅射物的粘附力,并同时避免过高的粗糙度引起溅射物对防着板表层的冲击掉渣,两者均会造成掉渣打弧现象。且由上述材料形成的表面层均具有一定的疏松度,可方便硫酸铜溶解液的渗入并化学分离过渡层与表面层。
所述表面层优选为氧化铝,其化学性质稳定,在溅射的进程中,不会发生任何的化学反应。
所述表面层的表面粗糙度Ra为35~80μm,这样的粗糙度能满足溅射过程中对溅射物的粘附力,如果粗糙度过高会引起溅射物对防着板表面层的冲击掉渣。
进一步地,所述基板、阻挡层、过渡层、表面层的表面粗糙度满足表面层粗糙度>过渡层表面粗糙度>阻挡层表面粗糙度>基板表面粗糙度。
进一步的,所述基板表面粗糙度Ra优选为10μm;
进一步的,所述阻挡层表面粗糙度Ra优选为36μm;
进一步的,所述过渡层表面粗糙度Ra优选为46μm;
进一步的,所述表面层表面粗糙度Ra优选为64μm。
本发明提供的所述的铜铟镓硒溅射用的防着板的制备方法,包括以下步骤:
(1)对基板依次进行喷砂处理、清洗;
(2)在清洗后的基板表面喷涂不锈钢颗粒形成阻挡层;
(3)在阻挡层之上的溅射区域喷涂熔点低且化学性质稳定的金属或非金属,形成过渡层;
(4)在过渡层之上涂镀石英砂、氧化铝、氮化硅中的一种或多种,形成表面层。
步骤(1)中,具体包括以下步骤:
(1-1)喷砂:采用粒径1-4mm石英砂、氧化铝、氮化硅中的一种或多种,通过喷砂设备用0.4-0.7MPa对基板进行喷射表面处理,提升基板表面粗糙度Ra至5~20μm,优选Ra为10μm;
(1-2)脱脂:按脱脂剂制造商推荐的操作条件,浸于不锈钢合金工业用碱性脱脂剂中;
(1-3)冲洗:用电阻率不低于200KΩ/cm2的常温水冲洗,优选高压喷淋,将脱脂剂从难以清洗的地方去除,如盲孔,焊缝;
(1-4)酸腐蚀:在室温下浸泡于硝酸/氢氟酸混合液中2至3分钟;硝酸/氢氟酸混合液由70%质量分数的硝酸溶液、50%质量分数的氢氟酸溶液与去离子水按照20:3:77的体积比组成;
(1-5)冲洗:用电阻率不低于200KΩ/cm2的常温水冲洗,优选高压喷淋,将酸溶液从难以清洗的地方去除,如盲孔,焊缝;
(1-6)酸洗:在室温下,用70%质量分数的的硝酸溶液与去离子水按照体积比1:1组成的混合溶液浸泡3-10分钟;
(1-7)冲洗:用电阻率不低于200KΩ/cm2的常温水冲洗,优选高压喷淋;
(1-8)去离子水洗:在室温下用电阻率不低于2MΩ/cm2的去离子水冲洗,时长5-10分钟;
(1-9)热冲洗:浸入40-45℃且电阻率不低于1MΩ/cm2/去离子水中,持续5-10分钟;
(1-10)去离子水洗:用去离子水喷雾冲洗部件足够时间;
(1-11)烘干:通过烘干设备在氮气保护下进行烘干。
步骤(2)中,所述喷涂采用电弧喷涂的方式。
步骤(3)中,所述喷涂为电弧喷涂或熔射喷涂中的一种。
步骤(4)中,所述涂镀采用喷砂方式。
电弧喷涂具体为:两根丝状金属喷涂材料用送丝装置通过送丝轮均匀、连续地分别送进电弧喷涂枪中的导电嘴内,导电嘴分别接电源的正、负极,并保证两根丝之间在未接触之前的可靠绝缘。当两金属丝材端部由于送进而互相接触时,在端部之间短路并产生电弧,使丝材端部瞬间熔化,压缩空气把熔融金属雾化成微熔滴,以很高的速度喷射到工件表面,形成电弧喷涂层。电弧喷涂最关心的问题之一是涂层粗糙度,它取决于雾化后微粒的粗细。影响雾化微粒粗细的因素较多,主要有雾化气流的压力、电弧电压、金属丝间的夹角等。随着雾化气流座力的增高,微粒变细;电弧电压愈高,微粒愈粗;两根金属丝间的夹角小,微粒要细些;低熔点金属比高熔点金属雾化微粒要细。除以上因素外,喷嘴的结构也影响雾化微粒的粗细,采用封闭式喷嘴比敞开式喷嘴能产生更细的雾化微粒。雾化后的粒子在压缩气流的推动下飞行,粒子飞行速度初始被加速,而后随着喷射距离的增加而减速。
电弧喷涂特点:热效率高、涂层结合强度高、生产效率高、喷涂成本低。
喷砂具体为:采用压缩空气为动力,以形成高速喷射束将喷料高速喷射到需处理工件表面,使工件表面的外表或形状发生变化。
本发明提供的所述铜铟镓硒溅射用的防着板的重复使用方法,包括以下步骤:
S1、向所述的铜铟镓硒溅射用的防着板的表面喷射可腐蚀过渡层的溶解液至防着板的过渡层与隔离层分离,得到含有阻挡层的基板;
S2、对含有阻挡层的基板进行清洗;
S3、重复上述铜铟镓硒溅射用的防着板的制备方法的步骤(3)和步骤(4)即可将防着板重新投入使用。
所述可腐蚀过渡层的溶解液为质量浓度为0.02~0.03mg/mL的硫酸铜溶液,优选为质量浓度为0.025mg/mL的硫酸铜溶液。
下面结合实施例对本发明金相详细说明。
实施例1
一种铜铟镓硒溅射用的防着板,所述防着板由下至上依次包括:304不锈钢基板、316不锈钢层、铝层、氧化铝层,其中316不锈钢层的下表面与304不锈钢基板的上表面接触,上表面与铝层的下表面接触;所述铝层的上表面与氧化铝层的下表面接触。
所述304基板的表面粗糙度Ra为10μm;
所述316不锈钢层的表面粗糙度Ra为36μm,厚度为0.3mm;所述316不锈钢层的表面积同304不锈钢基板的表面积。
所述铝层的表面粗糙度Ra为46μm,厚度为0.4mm;所述铝层的表面积同防着板被溅射区域的面积,这样可降低成本,也更利于铝层在硫酸铜溶液中快速的剥离。
所述氧化铝层的表面粗糙度Ra为64μm;所述氧化铝层的表面积同铝层的表面积。
所述铜铟镓硒溅射用的防着板的制备方法,包括以下步骤:
(1)基板表面喷砂处理:选用粒径1mm氧化铝砂通过喷砂设备0.6MPa压力喷射到基板表面,形成粗糙Ra为10μm表面;
(2)基板经脱脂--漂洗--酸腐蚀--漂洗--酸洗--漂洗--去离子水洗--烘干的过程进行预处理;
(3)在预处理后的基板表面采用电弧喷涂方式喷涂316SST颗粒形成阻挡层,其表面粗糙度Ra为36μm,厚度为0.3mm;
(4)在阻挡层之上对应的溅射区域采用电弧喷涂方式镀铝薄膜层,形成过渡层,其表面粗糙度Ra为46μm,厚度为0.4mm;
(5)在过渡层之上采用喷砂的方式涂镀氧化铝,形成表面层,其表面粗糙度Ra为64μm,厚度为0.2mm。
对完成上述步骤(4)的防着板进行封装,封装要求需两层以上聚脂袋真空密封,内容不需填充干燥剂,易形成干燥剂污染防着板的现象发生。将待使用的防着板拆除包装安装到溅射腔室上,进行铜铟镓硒太阳能电池的溅射,防着板表面会形成溅射材料及硒的附着物,且溅射的过程中未出现掉渣及腐蚀现象。
实施例2
实施例1中的铜铟镓硒溅射用的防着板的重复使用方法,包括以下步骤:
S1、向使用后的实施例1中的铜铟镓硒溅射用的防着板的表面喷射0.025mg/mL的硫酸铜溶液至防着板的铝层与316不锈钢层分离,得到含有316不锈钢层的304不锈钢基板;
S2、对含有316不锈钢层的304不锈钢基板进行实施例1中的步骤(1);
S3、重复实施例1中的步骤(3)和步骤(4),即可得到新的防着板。
该方法中,通过向表面有附着物的防着板喷射硫酸铜溶液,会在316不锈钢层与铝层衔接位置形成第一混合液(61),铝层与氧化铝层衔接位置形成第二混合液(62),第一混合液(61)和第二混合液(62)包含多种物质:主要为硫酸铜、硫酸铝、硫酸、氢氧化铝、氢氧化铜,如图2所示。发生的化学反应如下:2Al+3CuSO4==Al2(SO4)3+3Cu。具体反应进程如下:硫酸铜溶液通过对氧化铝层的渗透,在氧化铝层与铝层的连接处进行化学反应形成剥离并形成含多种物质的第二混合液(62),第二混合液(62)与硫酸铜溶液再形成对薄厚度的铝层的腐蚀,进而引起第二混合液(62)与硫酸铜溶液渗透通过铝层达到铝层与316不锈钢层的接触处,造成此区域发生同铝层与氧化铝层接合处相同的化学反应生成第一混合液(61),进而引起此区域结构上的剥离形成机械结构上的分离,即铝层同316不锈钢层/氧化铝层的分离。
对比例1
其他同实施例1,只是在制备时,不对基板的表面进行喷砂处理;这样得到的防着板的基板防着力较弱,当镀膜沉积到一定厚度时受应力释放的影响,引起了整个涂层及附着物整体脱落。
对比例2
其他同实施例1,只是作为表面层的氧化铝层的表面粗糙度为80μm;这样得到的防着板的表面层过于粗糙,附着力较强,但受粗糙度过高的影响表面突出或尖峰较多且高,在溅射镀膜过程中出现了尖端放电现象。
上述参照实施例对一种铜铟镓硒溅射用的防着板及其制备方法和重复使用方法进行的详细描述,是说明性的而不是限定性的,可按照所限定范围列举出若干个实施例,因此在不脱离本发明总体构思下的变化和修改,应属本发明的保护范围之内。
Claims (10)
1.一种铜铟镓硒溅射用的防着板,其特征在于,所述防着板由下至上依次包括:基板、阻挡层、过渡层、表面层;
所述阻挡层的材质为不锈钢;
所述过渡层为铝层;
所述铜铟镓硒溅射用的防着板能够重复使用,所述重复使用的方法包括以下步骤:
S1、向所述的铜铟镓硒溅射用的防着板的表面喷射可腐蚀过渡层的溶解液至防着板的过渡层与隔离层分离,得到含有阻挡层的基板;
S2、对含有阻挡层的基板进行清洗;
S3、在阻挡层之上依次形成过渡层、表面层,即可将防着板重新投入使用。
2.根据权利要求1所述的铜铟镓硒溅射用的防着板,其特征在于,所述阻挡层的表面积同基板的表面积;所述过渡层的表面积同防着板被溅射区域的面积,所述表面层的表面积同过渡层的表面积。
3.根据权利要求1所述的铜铟镓硒溅射用的防着板,其特征在于,所述基板的表面粗糙度为5~20μm。
4.根据权利要求1所述的铜铟镓硒溅射用的防着板,其特征在于,所述阻挡层的表面粗糙度Ra为25~50μm;所述阻挡层的厚度为0.2~0.5mm。
5.根据权利要求1所述的铜铟镓硒溅射用的防着板,其特征在于,所述过渡层的材质选用熔点低且化学性质稳定的金属或非金属。
6.根据权利要求1或5所述的铜铟镓硒溅射用的防着板,其特征在于,所述过渡层的表面粗糙度Ra为 35~80μm,所述过渡层的厚度为0.2~0.5mm。
7.根据权利要求1-5任意一项所述的铜铟镓硒溅射用的防着板,其特征在于,所述表面层为石英砂、氧化铝、氮化硅中的一种或多种;所述表面层的表面粗糙度Ra为 35~80μm。
8.如权利要求1-7任意一项所述的铜铟镓硒溅射用的防着板的制备方法,其特征在于,所述制备方法包括以下步骤:
(1)对基板依次进行喷砂处理、清洗;
(2)在清洗后的基板表面喷涂不锈钢颗粒形成阻挡层;
(3)在阻挡层之上的溅射区域喷涂熔点低且化学性质稳定的金属或非金属,形成过渡层;
(4)在过渡层之上涂镀石英砂、氧化铝、氮化硅中的一种或多种,形成表面层。
9.如权利要求1-7任意一项所述的铜铟镓硒溅射用的防着板的重复使用方法,其特征在于,所述重复使用方法包括以下步骤:
S1、向权利要求1-7任意一项所述的铜铟镓硒溅射用的防着板的表面喷射可腐蚀过渡层的溶解液至防着板的过渡层与隔离层分离,得到含有阻挡层的基板;
S2、对含有阻挡层的基板进行清洗;
S3、重复权利要求8所述的制备方法中的步骤(3)和步骤(4)即可将防着板重新投入使用。
10.根据权利要求9所述的铜铟镓硒溅射用的防着板的重复使用方法,其特征在于,所述可腐蚀过渡层的溶解液为质量浓度为0.02~0.03mg/mL的硫酸铜溶液。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05247634A (ja) * | 1992-03-05 | 1993-09-24 | Fujitsu Ltd | スパッタリング装置 |
WO1998055666A1 (en) * | 1997-06-04 | 1998-12-10 | Semiconductor Equipment Technology, Inc. | Shield for sputter coating method and apparatus |
JP2002309370A (ja) * | 2001-04-10 | 2002-10-23 | Anelva Corp | スパッタリング装置 |
CN101356055A (zh) * | 2006-02-15 | 2009-01-28 | 新日铁高新材料株式会社 | 具有导电金属层的不锈钢基材、硬盘悬臂材料及使用此材料制作的硬盘悬臂 |
KR101150418B1 (ko) * | 2012-02-06 | 2012-06-01 | 황수현 | 증착기의 챔버 내벽 보호 플레이트 및 그 제조방법 |
CN108878246A (zh) * | 2017-05-10 | 2018-11-23 | 应用材料公司 | 用于腔室部件的多层等离子体侵蚀保护 |
CN210001920U (zh) * | 2018-12-21 | 2020-01-31 | 山西米亚索乐装备科技有限公司 | 防护件和镀膜设备 |
CN112680749A (zh) * | 2020-12-21 | 2021-04-20 | 江苏时代华宜电子科技有限公司 | 一种基于真空溅射腔室的贵金属回收工艺 |
CN113373421A (zh) * | 2021-06-08 | 2021-09-10 | 京东方科技集团股份有限公司 | 防着板及其制备方法、蒸镀设备 |
CN113549858A (zh) * | 2021-07-22 | 2021-10-26 | 福建阿石创新材料股份有限公司 | 一种溅射镀膜机薄壁防护罩用高粗糙度防护涂层及其制备方法 |
CN114196900A (zh) * | 2021-12-17 | 2022-03-18 | 富乐德科技发展(天津)有限公司 | 一种半导体芯片制造业不锈钢材质部件表面处理方法 |
-
2022
- 2022-09-20 CN CN202211145495.8A patent/CN115478249B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05247634A (ja) * | 1992-03-05 | 1993-09-24 | Fujitsu Ltd | スパッタリング装置 |
WO1998055666A1 (en) * | 1997-06-04 | 1998-12-10 | Semiconductor Equipment Technology, Inc. | Shield for sputter coating method and apparatus |
JP2002309370A (ja) * | 2001-04-10 | 2002-10-23 | Anelva Corp | スパッタリング装置 |
CN101356055A (zh) * | 2006-02-15 | 2009-01-28 | 新日铁高新材料株式会社 | 具有导电金属层的不锈钢基材、硬盘悬臂材料及使用此材料制作的硬盘悬臂 |
KR101150418B1 (ko) * | 2012-02-06 | 2012-06-01 | 황수현 | 증착기의 챔버 내벽 보호 플레이트 및 그 제조방법 |
CN108878246A (zh) * | 2017-05-10 | 2018-11-23 | 应用材料公司 | 用于腔室部件的多层等离子体侵蚀保护 |
CN210001920U (zh) * | 2018-12-21 | 2020-01-31 | 山西米亚索乐装备科技有限公司 | 防护件和镀膜设备 |
CN112680749A (zh) * | 2020-12-21 | 2021-04-20 | 江苏时代华宜电子科技有限公司 | 一种基于真空溅射腔室的贵金属回收工艺 |
CN113373421A (zh) * | 2021-06-08 | 2021-09-10 | 京东方科技集团股份有限公司 | 防着板及其制备方法、蒸镀设备 |
CN113549858A (zh) * | 2021-07-22 | 2021-10-26 | 福建阿石创新材料股份有限公司 | 一种溅射镀膜机薄壁防护罩用高粗糙度防护涂层及其制备方法 |
CN114196900A (zh) * | 2021-12-17 | 2022-03-18 | 富乐德科技发展(天津)有限公司 | 一种半导体芯片制造业不锈钢材质部件表面处理方法 |
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