CN115477276A - Preparation method and application of convex mold for mixed-scale nanofluidic chip - Google Patents
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Abstract
Description
技术领域technical field
本发明是关于微纳加工技术领域,具体涉及一种用于混合尺度纳流体芯片的凸模具的制备方法及应用。The invention relates to the technical field of micro-nano processing, in particular to a preparation method and application of a convex mold for a mixed-scale nanofluid chip.
背景技术Background technique
纳米流体学是研究一维或多维尺寸不超过100 nm的通道中及其周围流体的特性和应用的一门新兴科学。表面/界面力的相互作用在纳米通道的流体运输中起着重要作用,且纳米通道中存在一些独特的化学和物理现象,例如双电层重叠、离子浓差极化和纳米流体整流等。这些特性促进了包括二极管和离子场效应晶体管等在内的纳流体器件在单分子分析、生化检测、能量收集和DNA测序等领域的应用。Nanofluidics is an emerging science that studies the properties and applications of fluids in and around channels with one or more dimensions not exceeding 100 nm. The interaction of surface/interface forces plays an important role in the fluid transport in nanochannels, and there are some unique chemical and physical phenomena in nanochannels, such as electric double layer overlapping, ion concentration polarization, and nanofluidic rectification, etc. These properties facilitate the application of nanofluidic devices, including diodes and ion field-effect transistors, in single-molecule analysis, biochemical detection, energy harvesting, and DNA sequencing.
纳流体器件通常需要微流体通道网络作为引导目标分子进入纳米通道的路径。通常采用微米制造和纳米制造相结合的工艺来制备具有混合尺度特征(一般跨nm至cm尺度)的纳流体芯片。然而,用于制备混合尺度纳流体芯片的传统微/纳米制造方法,即光刻、电子束/聚焦离子束光刻和纳米压印光刻,在加工跨尺度结构时面临巨大挑战。因此,发展一种简单、低成本集成加工混合尺度凸模具的方法对于批量化生产纳流体芯片至关重要。Nanofluidic devices typically require a network of microfluidic channels as pathways to guide target molecules into the nanochannels. A combination of microfabrication and nanofabrication processes is usually employed to fabricate nanofluidic chips with mixed-scale features (generally spanning nm to cm scales). However, conventional micro/nanofabrication methods for fabricating mixed-scale nanofluidic chips, namely photolithography, electron beam/focused ion beam lithography, and nanoimprint lithography, face great challenges in fabricating cross-scale structures. Therefore, the development of a simple and low-cost integrated method for processing mixed-scale convex molds is crucial for the mass production of nanofluidic chips.
发明内容Contents of the invention
本发明的目的在于针对上述问题,提供了一种用于混合尺度纳流体芯片的凸模具的制备方法及应用,该方法利用扫描探针技术实现了单晶硅表面具有混合尺度特征的凸模具集成加工,加工流程简单、成本低,制备得到的凸模具非常适用于纳流体芯片的批量化生产。The purpose of the present invention is to address the above problems, and provide a method for preparing a convex mold for mixed-scale nanofluidic chips and its application. The method uses scanning probe technology to realize the integration of convex molds with mixed-scale features on the surface of single crystal silicon processing, the processing flow is simple and the cost is low, and the prepared convex mold is very suitable for the mass production of nanofluidic chips.
为实现上述目的,本发明采用如下技术方案:To achieve the above object, the present invention adopts the following technical solutions:
用于混合尺度纳流体芯片的凸模具的制备方法,其加工步骤如下:A method for preparing a convex mold for a mixed-scale nanofluidic chip, the processing steps of which are as follows:
S1、采用微纳刻划设备一在洁净的单晶硅样品表面按预定轨迹进行第一次刻划加工;S1. Use micro-nano scribing equipment to perform the first scribing process on the surface of the clean single crystal silicon sample according to the predetermined trajectory;
S2、将步骤S1中第一次刻划后的单晶硅样品置入混合溶液中浸泡,使硅烷分子充分吸附在刻划区域,用于提升刻划区域抵抗刻蚀的能力;所述混合溶液为硅烷和乙醇混合,或硅氧烷和乙醇混合;所述浸泡时间为1-3h;S2. Put the monocrystalline silicon sample after the first scribing in step S1 into the mixed solution to soak, so that the silane molecules are fully adsorbed on the scribing area, so as to improve the ability of the scribing area to resist etching; the mixed solution It is a mixture of silane and ethanol, or a mixture of siloxane and ethanol; the soaking time is 1-3h;
S3、采用刻蚀溶液对步骤S2所处理的单晶硅样品进行选择性刻蚀,从而刻蚀出具有微米级高度和厘米级长度的硅凸结构;S3, using an etching solution to selectively etch the single crystal silicon sample processed in step S2, so as to etch a silicon convex structure with a micron-level height and a centimeter-level length;
S4、采用微纳刻划设备二对步骤S3中具有硅凸结构的单晶硅表面进行第二次刻划,在单晶硅表面形成纳米级划痕,所述纳米级划痕为连续的结构;S4. Use micro-nano scribing equipment 2 to perform a second scribing on the single crystal silicon surface having a silicon convex structure in step S3, and form nanoscale scratches on the single crystal silicon surface, and the nanoscale scratches are continuous structures ;
S5、将步骤S4所得的单晶硅样品再次浸入刻蚀溶液中进行选择性刻蚀,从而形成具有纳米级高度的凸结构,进而完成混合尺度凸模具结构的集成加工。S5, immersing the monocrystalline silicon sample obtained in step S4 again into an etching solution for selective etching, thereby forming a convex structure with a nanoscale height, and then completing the integrated processing of the mixed-scale convex mold structure.
步骤S1中,所述微纳刻划设备一刻划时所用的接触压力为11-20 GPa,速度为0.1-1 mm/s。In step S1, the contact pressure used for scribing by the micro-nano scribing device is 11-20 GPa, and the speed is 0.1-1 mm/s.
步骤S2中,所述硅烷或硅氧烷可采用:1H,1H,2H,2H-全氟癸基三乙氧基硅烷(PFDS)、十八烷基三氯硅烷(OTS)或聚二甲基硅氧烷(PDMS)等,其用于提升湿法刻蚀掩膜的能力。In step S2, the silane or siloxane can be: 1H, 1H, 2H, 2H-perfluorodecyltriethoxysilane (PFDS), octadecyltrichlorosilane (OTS) or polydimethyl Siloxane (PDMS), etc., which are used to improve the ability of wet etching masks.
步骤S3中,刻蚀溶液采用氢氧化钾溶液(质量浓度为20%)或四甲基氢氧化铵溶液(质量浓度为25%);步骤S5中的刻蚀溶液采用氢氧化钾溶液(质量浓度为20%)。In step S3, the etching solution adopts potassium hydroxide solution (mass concentration is 20%) or tetramethylammonium hydroxide solution (mass concentration is 25%); the etching solution in step S5 adopts potassium hydroxide solution (
步骤S4中,所述微纳刻划设备二进行第二次刻划时所用的接触压力为11-13 GPa,速度为1-100 μm/s,其目的是形成纳米级划痕。In step S4, the micro-nano scribing device 2 performs the second scribing with a contact pressure of 11-13 GPa and a speed of 1-100 μm/s, the purpose of which is to form nanoscale scratches.
进一步的,所述微纳刻划设备一的刻划区域半径大于微纳刻划设备二。Further, the scribing area radius of the first micro-nano scribing device is larger than that of the second micro-nano scribing device.
进一步的,所述微纳刻划设备一、微纳刻划设备二采用不同的金刚石探针。其中,作为微纳刻划设备一的金刚石探针一的区域半径为微米级,作为微纳刻划设备二的金刚石探针二的区域半径为20-50 nm。Further, the first micro-nano scribing device and the second micro-nano scribing device use different diamond probes. Wherein, the area radius of the diamond probe 1 as the micro-nano scribing device 1 is in micron order, and the area radius of the diamond probe 2 as the micro-nano scribing device 2 is 20-50 nm.
进一步的,所述S3步骤中刻蚀时间为25-35min,刻蚀溶液的温度为40-50℃。Further, the etching time in the step S3 is 25-35 min, and the temperature of the etching solution is 40-50°C.
进一步的,所述S5步骤中刻蚀时间为2- 4 min,刻蚀溶液的温度为22-28℃。Further, the etching time in the step S5 is 2-4 min, and the temperature of the etching solution is 22-28°C.
进一步的,结合纳米转印技术,可以将步骤S5所得混合尺度凸模具结构转印到聚二甲基硅氧烷(PDMS)、聚甲基丙烯酸甲酯(PMMA)等材料表面,实现混合尺度纳流体芯片的批量化生产。Furthermore, combined with nano-transfer printing technology, the mixed-scale convex mold structure obtained in step S5 can be transferred to the surface of polydimethylsiloxane (PDMS), polymethyl methacrylate (PMMA) and other materials to achieve mixed-scale nano Mass production of fluidic chips.
本发明的有益效果如下:The beneficial effects of the present invention are as follows:
本发明利用硅烷和乙醇的混合溶液使得硅烷充分吸附于刻划区域,提高了其抵抗刻蚀的能力,能更好地进行选择性刻蚀出初步的厘米级长度、微米级高度的混合尺度特征;在第二次选择性刻蚀时在得出纳米级高度的凸结构;期间,利用两次扫描探针技术进行不同尺度刻划,从而可以得到具有厘米级长度、微米级高度和纳米级宽度的混合尺度特征的凸模具结构;整体而言,本发明实现了单晶硅表面具有混合尺度特征的凸模具集成加工,并且流程简单、成本低,非常适用于纳流体芯片生产。The invention utilizes the mixed solution of silane and ethanol to make silane fully adsorbed on the scribed area, which improves its ability to resist etching, and can better selectively etch the preliminary mixed-scale features of centimeter-level length and micron-level height ;During the second selective etching, the convex structure with nanoscale height is obtained; The convex mold structure with mixed-scale features; generally speaking, the present invention realizes the integrated processing of convex molds with mixed-scale features on the surface of single crystal silicon, and has a simple process and low cost, and is very suitable for the production of nanofluidic chips.
附图说明Description of drawings
图1是本发明的加工流程示意图。Fig. 1 is a schematic diagram of the processing flow of the present invention.
图2是利用本发明实现具有混合尺度特征的凸模具加工实物示意图。Fig. 2 is a schematic diagram of the real object of convex mold processing with mixed-scale features realized by the present invention.
具体实施方式detailed description
下面通过具体实施例结合附图,对本发明做详细的说明。The present invention will be described in detail below through specific embodiments in conjunction with the accompanying drawings.
实施例1Example 1
如图1所示,本实施例中,用于混合尺度纳流体芯片的凸模具的制备方法,包括以下步骤:As shown in Figure 1, in this embodiment, the method for preparing a convex mold for a mixed-scale nanofluidic chip includes the following steps:
S1、采用微纳刻划设备一在洁净的单晶硅表面按预定轨迹进行刻划加工,刻划的运动轨迹按照面扫描模式进行,暴露出刻划区域的单晶硅衬底;S1. Using micro-nano scribing equipment-carry out scribing processing on the clean single crystal silicon surface according to the predetermined trajectory, and the scribing motion trajectory is carried out according to the surface scanning mode, exposing the single crystal silicon substrate in the scribed area;
所选微纳刻划设备一的曲率半径约为10 μm,刻划载荷为20-50 mN。The radius of curvature of the selected micro-nano scribing device 1 is about 10 μm, and the scribing load is 20-50 mN.
S2、将第一次刻划后的单晶硅样品置入1H,1H,2H,2H-全氟癸基三乙氧基硅烷和乙醇(优级纯)的混合溶液中,浸泡2h,使硅烷分子充分吸附在刻划区域,从而提升刻划区域的掩膜能力。S2. Put the monocrystalline silicon sample after the first scoring into a mixed solution of 1H, 1H, 2H, 2H-perfluorodecyltriethoxysilane and ethanol (excellent grade), soak for 2 hours, and make the silane Molecules are fully adsorbed in the scribed area, thereby improving the masking ability of the scribed area.
S3、采用氢氧化钾溶液对S2步骤所处理的单晶硅样品进行选择性刻蚀,从而刻蚀出具有微米级高度和厘米级长度的硅凸结构;所选刻蚀时间约为30 min,刻蚀剂温度保持在40℃。S3. Using a potassium hydroxide solution to selectively etch the monocrystalline silicon sample treated in step S2, thereby etching a silicon convex structure with a micron-level height and a centimeter-level length; the selected etching time is about 30 min, The etchant temperature was maintained at 40°C.
S4、在扫描探针显微镜或划痕仪上,采用微纳刻划设备二刻划S3步骤中具有硅凸结构的单晶硅表面。S4. On a scanning probe microscope or scratch instrument, use micro-nano scribing equipment 2 to scribble the single crystal silicon surface with silicon convex structure in step S3.
S5、将S4步骤所得的单晶硅样品再次浸入氢氧化钾溶液中进行选择性刻蚀,所选刻蚀时间为3 min,刻蚀剂温度保持在26℃,从而形成具有纳米级高度的凸结构,进而完成混合尺度凸模具结构的集成加工。S5. Immerse the monocrystalline silicon sample obtained in step S4 again in a potassium hydroxide solution for selective etching. The selected etching time is 3 min, and the temperature of the etchant is kept at 26° C., thereby forming a nanoscale height. structure, and then complete the integrated processing of the mixed-scale convex die structure.
实施例2Example 2
本实施例中,用于混合尺度纳流体芯片的凸模具的制备方法,包括以下步骤:In this embodiment, the method for preparing a convex mold for a mixed-scale nanofluidic chip includes the following steps:
S1、采用微纳刻划设备一在洁净的单晶硅(100)表面按预定轨迹进行刻划加工,刻划的运动轨迹按照面扫描模式进行,暴露出刻划区域的单晶硅衬底;S1. Using micro-nano scribing equipment-carry out scribing processing on the clean single crystal silicon (100) surface according to the predetermined trajectory, and the scribing motion trajectory is carried out according to the surface scanning mode, exposing the single crystal silicon substrate in the scribed area;
所述微纳刻划设备一刻划时所用的接触压力为11-17GPa,速度为0.1-1 mm/s。The micro-nano scribing device uses a contact pressure of 11-17 GPa and a speed of 0.1-1 mm/s when scribing.
S2、将第一次刻划后的单晶硅样品置入十八烷基三氯硅烷(OTS)和乙醇的混合溶液中,浸泡1.5h,使硅烷分子充分吸附在刻划区域,从而提升刻划区域的掩膜能力;S2. Put the monocrystalline silicon sample after the first scoring into a mixed solution of octadecyltrichlorosilane (OTS) and ethanol, and soak for 1.5 hours, so that the silane molecules are fully adsorbed on the scoring area, thereby improving the marking efficiency. The masking ability of the designated area;
S3、采用四甲基氢氧化铵溶液对S2步骤所处理的单晶硅样品进行选择性刻蚀,从而刻蚀出具有微米级高度和厘米级长度的硅凸结构;所选刻蚀时间约为33 min,刻蚀剂温度保持在45-50℃;S3. Using tetramethylammonium hydroxide solution to selectively etch the monocrystalline silicon sample treated in step S2, thereby etching a silicon convex structure with a micron-level height and a centimeter-level length; the selected etching time is about 33 min, the etchant temperature is kept at 45-50°C;
S4、在扫描探针显微镜或划痕仪上,采用微纳刻划设备二刻划S3步骤中具有硅凸结构的单晶硅表面;S4. On a scanning probe microscope or scratch instrument, use micro-nano scribing equipment 2 to scribe the single crystal silicon surface with a silicon convex structure in step S3;
S5、将S4步骤所得的单晶硅样品再次浸入氢氧化钾溶液中进行选择性刻蚀,从而形成具有纳米级高度的凸结构,所选刻蚀时间为2 min,刻蚀剂温度保持在22℃,进而完成混合尺度凸模具结构的集成加工。S5. Immerse the monocrystalline silicon sample obtained in step S4 again in a potassium hydroxide solution for selective etching, thereby forming a convex structure with a nanoscale height. The selected etching time is 2 min, and the temperature of the etchant is kept at 22 ℃, and then complete the integrated processing of the mixed-scale convex mold structure.
实施例3Example 3
本实施例中,用于混合尺度纳流体芯片的凸模具的制备方法,包括以下步骤:In this embodiment, the method for preparing a convex mold for a mixed-scale nanofluidic chip includes the following steps:
S1、采用微纳刻划设备一在洁净的单晶硅(100)表面按预定轨迹进行刻划加工,刻划的运动轨迹按照面扫描模式进行,暴露出刻划区域的单晶硅衬底;S1. Using micro-nano scribing equipment-carry out scribing processing on the clean single crystal silicon (100) surface according to the predetermined trajectory, and the scribing motion trajectory is carried out according to the surface scanning mode, exposing the single crystal silicon substrate in the scribed area;
所述微纳刻划设备一刻划时所用的接触压力为16-20 GPa,速度为0.1-1 mm/s。The micro-nano scribing device uses a contact pressure of 16-20 GPa and a speed of 0.1-1 mm/s when scribing.
S2、将第一次刻划后的单晶硅样品置入聚二甲基硅氧烷(PDMS)和乙醇的混合溶液中,浸泡2h,使硅烷分子充分吸附在刻划区域,从而提升刻划区域的掩膜能力;S2. Put the monocrystalline silicon sample after the first marking into a mixed solution of polydimethylsiloxane (PDMS) and ethanol, soak for 2 hours, so that the silane molecules are fully adsorbed on the marking area, thereby improving the marking Area masking capabilities;
S3、采用氢氧化钾溶液对S2步骤所处理的单晶硅样品进行选择性刻蚀,从而刻蚀出具有微米级高度和厘米级长度的硅凸结构;所选刻蚀时间约为25 min,刻蚀剂温度保持在48℃;S3. Selectively etch the monocrystalline silicon sample treated in step S2 with a potassium hydroxide solution, thereby etching a silicon convex structure with a micron-level height and a centimeter-level length; the selected etching time is about 25 min, The etchant temperature is kept at 48°C;
S4、在扫描探针显微镜或划痕仪上,采用微纳刻划设备二刻划S3步骤中具有硅凸结构的单晶硅表面;S4. On a scanning probe microscope or scratch instrument, use micro-nano scribing equipment 2 to scribe the single crystal silicon surface with a silicon convex structure in step S3;
S5、将S4步骤所得的单晶硅样品再次浸入氢氧化钾溶液中进行选择性刻蚀,从而形成具有纳米级高度的凸结构,所选刻蚀时间为3min,刻蚀剂温度保持在28℃,进而完成混合尺度凸模具结构的集成加工。S5. Immerse the monocrystalline silicon sample obtained in step S4 again in a potassium hydroxide solution for selective etching, thereby forming a convex structure with a nanoscale height. The selected etching time is 3 minutes, and the temperature of the etchant is kept at 28° C. , and then complete the integrated processing of the mixed-scale convex die structure.
实施例4Example 4
针对上述实施例1-3其中任一实施例,所采用的微纳刻划设备一的刻划区域半径均大于微纳刻划设备二。For any one of the above-mentioned embodiments 1-3, the radius of the scribed area of the micro-nano scribing device 1 used is larger than that of the micro-nano scribing device 2 .
其中,所述微纳刻划设备一、微纳刻划设备二采用不同半径的金刚石探针。Wherein, the first micro-nano scribing device and the second micro-nano scribing device use diamond probes with different radii.
具体的,作为微纳刻划设备一的金刚石探针一的区域半径为8-12 μm,作为微纳刻划设备二的金刚石探针二的区域半径为20-50 nm。Specifically, the area radius of the diamond probe 1 as the micro-nano scribing device 1 is 8-12 μm, and the area radius of the diamond probe 2 as the micro-nano scribing device 2 is 20-50 nm.
将通过上述任一实施例制备的混合尺度纳流体芯片凸模具,如图2所示。The convex mold of the mixed-scale nanofluidic chip prepared by any of the above-mentioned embodiments is shown in FIG. 2 .
进一步的,结合纳米转印技术,可以将步骤S5所得混合尺度凸模具结构转印到聚二甲基硅氧烷(PDMS)、聚甲基丙烯酸甲酯(PMMA)等材料表面,从而现混合尺度纳流体芯片的批量化生产。Furthermore, combined with nano-transfer printing technology, the mixed-scale convex mold structure obtained in step S5 can be transferred to the surface of polydimethylsiloxane (PDMS), polymethyl methacrylate (PMMA) and other materials, so that the mixed-scale Mass production of nanofluidic chips.
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