CN115420339A - Gas and piezoresistive pressure sensor and processing method thereof - Google Patents
Gas and piezoresistive pressure sensor and processing method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
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Abstract
The invention relates to the technical field of sensors, and discloses a gas and piezoresistive pressure sensor and a processing method thereof. The processing method comprises the following steps: providing a substrate with a gas chamber and a pressure chamber; forming a piezoresistor on a substrate; forming an insulating layer with a first preset thickness on one side of a substrate; forming a plurality of heating elements which are arranged at intervals on the insulating layer; forming an insulating layer with a second preset thickness; thinning the insulating layer opposite to the pressure chamber; forming a plurality of sensitive electrodes on the insulating layer; an isolation groove is formed between every two adjacent gas-sensitive detection units; removing at least a portion of the substrate between the insulating layer and the gas chamber; a gas-sensitive layer is formed on each of the sensitive electrodes. The gas and piezoresistive pressure sensor processed by the processing method of the gas and piezoresistive pressure sensor disclosed by the invention is small in size, is suitable for monitoring the components, concentration and current air pressure of gas released by the battery before the thermal runaway of the battery occurs, and has great significance for predicting the thermal runaway of the battery.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a gas and piezoresistive pressure sensor and a processing method thereof.
Background
Most of the existing sensors can only be used for detecting the concentration of one gas, if the concentration of multiple gases needs to be detected, a plurality of sensors need to be adopted for simultaneous detection, if the air pressure in the current environment needs to be detected, the air pressure sensor needs to be used independently for detection, the occupied space is large, the prior art is limited by the processing technology, and the air pressure sensor and the gas sensor cannot be integrated together.
Disclosure of Invention
Based on the above, the present invention aims to provide a gas and piezoresistive pressure sensor and a processing method thereof, which overcome the problems in the prior art, integrate a gas sensor and a pressure sensor together, have a simple processing technology, and the processed gas and piezoresistive pressure sensor has a small volume and is easy to place.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of manufacturing a gas and piezoresistive pressure sensor, comprising:
providing a substrate with a gas chamber and a pressure chamber;
forming a piezoresistor opposite to the pressure chamber on the substrate;
forming an insulating layer with a first preset thickness on one side of the substrate;
forming heating elements of each gas-sensitive detection unit on the insulating layer, wherein a plurality of the heating elements are arranged at intervals;
forming an insulating layer of a second preset thickness on the heating element and the insulating layer;
thinning the insulating layer opposite to the pressure chamber;
forming a sensitive electrode of each gas-sensitive detection unit on an insulating layer, wherein a plurality of sensitive electrodes are arranged at intervals and are in one-to-one correspondence with a plurality of heating elements;
forming a barrier layer on the insulating layer and the sensitive electrode, and forming a barrier opening on the barrier layer;
removing the insulating layer opposite to the blocking opening, and forming an isolation groove between every two adjacent gas-sensitive detection units;
removing at least a portion of the substrate between the insulating layer and the gas chamber;
a gas-sensitive layer is formed on each of the sensitive electrodes.
As a preferable scheme of the processing method of the gas and piezoresistive pressure sensor, when the insulating layer with a first preset thickness is formed, the insulating layer comprises a first sub insulating layer, a second sub insulating layer and a third sub insulating layer which are sequentially formed; and when the insulating layer with the second preset thickness is formed, the insulating layer comprises a fourth sub insulating layer and a fifth sub insulating layer which are sequentially formed.
In a preferred embodiment of the method for processing a gas and piezoresistive pressure sensor, a temperature detection electrode is formed at an edge of the insulating layer when the sensing electrode is formed.
The method for processing the gas and piezoresistive pressure sensor further comprises the steps of forming a lead layer and a first metal PAD electrically connected with the lead layer, wherein the lead layer is formed on the substrate and electrically connected with the piezoresistor, and the first metal PAD is formed after the sensitive electrode and before the barrier layer.
A gas and piezoresistive pressure sensor is processed by adopting the processing method of the gas and piezoresistive pressure sensor in any scheme, and comprises the following steps: a substrate having a gas chamber and a pressure chamber disposed thereon; the piezoresistor is formed on one side, opposite to the pressure chamber, of the substrate; the insulating layer is formed on one side of the substrate and covers the piezoresistor; a plurality of gas-sensitive detecting element for detect sensitive gas and adjacent two be equipped with the separation tank between the gas-sensitive detecting element, every the gas-sensitive detecting element all includes heating member, sensitive electrode and the gas-sensitive layer that corresponds the setting, the heating member is located in the insulating layer, sensitive electrode sets up the insulating layer deviates from one side of basement, the gas-sensitive layer covers on the sensitive electrode, sensitive electrode is used for detecting the resistivity of gas-sensitive layer.
As a preferable scheme of the gas and piezoresistive pressure sensor, the base comprises a first silicon substrate and a second silicon substrate which are sequentially stacked, the gas chamber and the pressure chamber are arranged on one side, connected with the second silicon substrate, of the first silicon substrate, the piezoresistor is formed on the second silicon substrate, and the insulating layer is arranged on one side, away from the first silicon substrate, of the second silicon substrate.
As a preferable scheme of the gas and piezoresistive pressure sensor, the insulating layer includes a first sub-insulating layer, a second sub-insulating layer, a third sub-insulating layer, a fourth sub-insulating layer and a fifth sub-insulating layer, which are sequentially stacked along a direction away from the substrate, the heating element is disposed in the third sub-insulating layer, and the sensitive electrode is formed on a side of the fifth sub-insulating layer, which is away from the fourth sub-insulating layer.
As a preferable embodiment of the gas and piezoresistive pressure sensor, the second sub insulating layer and the fourth sub insulating layer are silicon nitride layers, and the first sub insulating layer, the third sub insulating layer and the fifth sub insulating layer are silicon oxide layers.
As a preferable scheme of the gas and piezoresistive pressure sensor, the heating element is in a serpentine shape and is a titanium electrode or a tungsten electrode, and the sensitive electrode is a titanium interdigital electrode or a platinum interdigital electrode.
As a preferable aspect of the gas and piezoresistive pressure sensor, the gas and piezoresistive pressure sensor further comprises a temperature detection electrode for detecting temperature, and the temperature detection electrode is arranged at an edge of the insulating layer.
The invention has the beneficial effects that: the invention discloses a processing method of a gas and piezoresistive pressure sensor, which solves the problem that the gas sensor and the pressure sensor can not be integrated together in the prior art, and the processed gas and piezoresistive pressure sensor has small volume and easy placement, can simultaneously detect the concentrations of a plurality of gases and detect the air pressure in the current environment, is suitable for monitoring the gas components and the concentrations released by a battery and the current air pressure before the thermal runaway of the battery occurs, and has great significance for predicting the thermal runaway of the battery.
The gas and piezoresistive pressure sensor disclosed by the invention has the advantages of small volume, easiness in placement and capability of simultaneously detecting the concentration of a plurality of gases and the air pressure of the current environment, is suitable for detecting the gas concentration and the air pressure before thermal runaway of a battery, has a decisive role in predicting the thermal runaway of the battery, and can reduce major fire safety accidents and personnel and property losses caused by the thermal runaway phenomenon of the battery.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.
FIG. 1 is a flow chart of a method of processing a gas and piezoresistive pressure sensor according to an embodiment of the present invention;
FIGS. 2-26 are process diagrams of a method of fabricating a gas and piezoresistive pressure sensor according to an embodiment of the present invention;
FIG. 27 is a top view of a gas and piezoresistive pressure sensor provided by an embodiment of the present invention;
FIG. 28 is a cross-sectional view of a gas and piezoresistive pressure sensor provided by an embodiment of the present invention;
FIG. 29 is a schematic diagram of the sensing electrodes of a gas and piezoresistive pressure sensor provided by an embodiment of the present invention;
fig. 30 is a schematic diagram of a heating element of a gas and piezoresistive pressure sensor according to an embodiment of the present invention.
In the figure:
1. a substrate; 11. a first silicon substrate; 12. a second silicon substrate; 101. a gas chamber; 102. a pressure chamber;
21. a voltage dependent resistor; 22. a wiring layer; 23. a first metal PAD;
3. an insulating layer; 30. an isolation trench; 31. a first sub-insulating layer; 32. a second sub-insulating layer; 33. a third sub-insulating layer; 330. filling the groove; 34. a fourth sub-insulating layer; 35. a fifth sub insulating layer;
4. a gas-sensitive detection unit; 41. a heating member; 410. a heating layer; 42. a sensitive electrode; 43. a gas-sensitive layer;
5. a temperature detection electrode; 50. a metal layer;
6. a barrier layer; 60. blocking the opening;
100. a first photoresist layer; 1001. a first opening region; 200. a second photoresist layer; 2001. a second opening region; 300. a third photoresist layer; 3001. a third opened region; 400. a fourth photoresist layer; 4001. a fourth opening region; 500. a fifth photoresist layer; 5001. a fifth opening region; 5002. a sixth open area.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Wherein the terms "first position" and "second position" are two different positions.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection or a removable connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The present embodiment provides a method for processing a gas and piezoresistive pressure sensor, as shown in fig. 1, including the following steps:
s1, providing a substrate 1 with a gas chamber 101 and a pressure chamber 102.
Specifically, the substrate 1 of the present embodiment is processed by the following method:
s11, providing a first silicon substrate 11;
s12, etching the upper surface of the first silicon substrate 11 to form a gas groove and a pressure groove respectively;
and S13, bonding a second silicon substrate 12 on the upper surface of the first silicon substrate 11, wherein the first silicon substrate 11 and the second silicon substrate 12 form a base 1, and the gas groove and the pressure groove respectively become a gas chamber 101 and a pressure chamber 102, as shown in FIG. 2.
Specifically, the substrate 1 of the present embodiment is an N (100) silicon wafer, and the resistivity is between 3 Ω · cm and 8 Ω · cm. In other embodiments, the base 1 is not limited to be formed by processing the first silicon substrate 11 and the second silicon substrate 12, and may also be an SOI wafer on which the gas chamber 101 and the pressure chamber 102 are formed, which is specifically selected according to actual needs.
S2, forming a piezoresistor 21 opposite to the pressure chamber 102 and a lead layer 22 electrically connected with the piezoresistor 21 on the substrate 1.
Specifically, S2 includes the steps of:
s21, forming a first photoresist layer 100 on the upper surface of the substrate 1, and patterning the first photoresist layer 100 to form a first opening region 1001, as shown in fig. 2;
s22, implanting light boron into the substrate 1 through the first opening region 1001 to form the varistor 21, as shown in fig. 3, and then removing the patterned first photoresist layer 100;
s23, forming a second photoresist layer 200 on the upper surface of the substrate 1, and patterning the second photoresist layer 200 to form a second open region 2001, as shown in fig. 4;
s24, injecting concentrated boron into one end of the piezoresistor 21 through the second opening region 2001 to form a lead layer 22 electrically connected with the piezoresistor 21, as shown in FIG. 5, and then removing the patterned second photoresist layer 200;
and S25, annealing and cooling the semi-finished product.
It should be noted that the annealing temperature and the annealing time duration in S25 are the same as those of the air pressure sensor, and those skilled in the art can select the annealing temperature and the annealing time duration according to actual needs, and details are not described in this embodiment.
And S3, forming an insulating layer 3 with a first preset thickness on one side of the substrate 1.
Specifically, the method for forming the insulating layer 3 with the first preset thickness includes the following steps:
s31, forming a first sub-insulating layer 31 on the upper surfaces of the substrate 1, the piezoresistors 21 and the lead layer 22 by using a low-pressure chemical vapor deposition method, as shown in FIG. 6, wherein the material of the first sub-insulating layer 31 is silicon oxide and the thickness of the first sub-insulating layer is about 200nm;
s32, forming a second sub-insulating layer 32 on the first sub-insulating layer 31 by using a plasma enhanced chemical vapor deposition method, as shown in fig. 7, wherein the second sub-insulating layer 32 is made of silicon nitride and has a thickness of about 680nm;
s33, forming a third sub-insulating layer 33 on the second sub-insulating layer 32 by using a plasma enhanced chemical vapor deposition method, as shown in fig. 8, wherein the material of the third sub-insulating layer 33 is silicon oxide and the thickness thereof is about 280nm.
In other embodiments of the present invention, the thicknesses of the first sub insulating layer 31, the second sub insulating layer 32, and the third sub insulating layer 33 are not limited to the above-mentioned limitations, and may be other thicknesses, specifically, they may be set according to actual needs.
And S4, forming the heating element 41 of each gas-sensitive detection unit 4 on the insulating layer 3, wherein the four heating elements 41 are arranged at intervals.
Specifically, when four heating members 41 are formed, the following steps are specifically included:
s41, coating photoresist on the third sub-insulating layer 33 to form a third photoresist layer 300;
s42, patterning the third photoresist layer 300 to form a third opening area 3001, as shown in fig. 9;
s43, etching the third sub insulating layer 33 facing the third opening area 3001, and forming a filling groove 330 on the third sub insulating layer 33, as shown in fig. 10;
s44, depositing ti to form a heating layer 410, as shown in fig. 11, depositing ti in the filling groove 330 to form a heating member 41, and finally removing the patterned third photoresist layer 300 and the heating layer 410 deposited on the third photoresist layer 300, as shown in fig. 12.
In other embodiments, the number of the heating members 41 is not limited to four in this embodiment, and may be other numbers, which are specifically selected according to actual needs. When the heating member 41 is formed in step S44, the material of the heating member 41 is not limited to titanium in this embodiment, and may be tungsten, a single heating material, or two heating materials, and is specifically selected and set according to actual needs. In other embodiments, S43 may be omitted, and the heating member 41 may be formed directly on the upper surface of the third sub-insulating layer 33, which is selected according to actual needs.
And S5, forming the insulating layer 3 with a second preset thickness on the heating member 41 and the insulating layer 3.
When the insulating layer 3 with the second preset thickness is formed, the method comprises the following steps:
s51, forming a fourth sub-insulating layer 34 on the third sub-insulating layer 33 and the heating member 41 by using a plasma enhanced chemical vapor deposition method, as shown in fig. 13, wherein the fourth sub-insulating layer 34 is made of silicon nitride and has a thickness of about 400nm;
s52, forming a fifth sub-insulating layer 35 on the fourth sub-insulating layer 34 by using a plasma enhanced chemical vapor deposition method, as shown in fig. 14, wherein the material of the fifth sub-insulating layer 35 is silicon oxide and the thickness thereof is about 620nm.
In other embodiments of the present invention, the thicknesses of the fourth sub insulating layer 34 and the fifth sub insulating layer 35 are not limited to the above-mentioned limitations, and may be other thicknesses, specifically, set according to actual needs.
S6, thinning the insulating layer 3 opposite to the pressure chamber 102.
Specifically, S6 includes the steps of:
s61, coating photoresist on the fifth sub-insulating layer 35 to form a fourth photoresist layer 400;
s62, patterning the fourth photoresist layer 400 to form a fourth opening region 4001, as shown in FIG. 15;
s63, sequentially etching the fifth sub-insulating layer 35, the fourth sub-insulating layer 34, the third sub-insulating layer 33 and the 600nm second sub-insulating layer 32 which are opposite to the fourth opening region 4001, wherein the thickness of the insulating layer 3 which is opposite to the pressure chamber 102 after etching is 280nm as shown in FIG. 16;
and S64, removing the patterned fourth photoresist layer 400, as shown in FIG. 17.
S7, two temperature detection electrodes 5 and a sensitive electrode 42 of each gas-sensitive detection unit 4 are formed on the insulating layer 3, the temperature detection electrodes 5 are formed on the edge of the insulating layer 3, and the four sensitive electrodes 42 are arranged at intervals and are in one-to-one correspondence with the four heating elements 41.
Specifically, S7 includes the steps of:
s71, coating photoresist on the upper surfaces of the fifth sub-insulation layer 35 and part of the second sub-insulation layer 32 to form a fifth photoresist layer 500;
s72, patterning the fifth photoresist layer 500 to form a fifth opening region 5001 and a sixth opening region 5002, as shown in fig. 18;
s73, depositing platinum to form a metal layer 50, as shown in fig. 19, wherein the platinum deposited in the fifth opening region 5001 forms the sensing electrode 42, and the platinum deposited in the sixth opening region 5002 forms the temperature detecting electrode 5;
s74, finally, removing the patterned fifth photoresist layer 500 and the metal layer 50 deposited on the fifth photoresist layer 500, as shown in FIG. 20;
s75, forming a first metal PAD 23, wherein one end of the first metal PAD 23 is electrically connected to the lead layer 22, and the other end of the first metal PAD 23 extends out of the second sub-insulating layer 32, as shown in fig. 21.
When the first metal PAD 23 is formed in S75, a second metal PAD electrically connected to the heating member 41, a first metal wiring electrically connected to the sensing electrode 42, and a second metal wiring electrically connected to the temperature detection electrode 5 are simultaneously formed. Specifically, a sixth photoresist layer is formed on the upper surfaces of the fifth sub-insulating layer 35, the sensing electrode 42, the temperature detection electrode 5 and a part of the second sub-insulating layer 32, then a seventh open region, an eighth open region, a ninth open region and a tenth open region are formed on the sixth photoresist layer, and then the first sub-insulating layer 31 and the second sub-insulating layer 32 facing the seventh open region and the lead layer 22 are etched to form a first metal groove; etching the fourth and fifth sub-insulating layers 34 and 35 facing the eighth opening region and the heating member 41 to form a second metal groove, depositing a gold layer or a chrome layer, and removing the sixth photoresist layer, forming a first metal PAD 23 electrically connected to the wiring layer 22 in the first metal groove, forming a second metal PAD electrically connected to the heating member 41 in the second metal groove, forming a first metal lead electrically connected to the sensing electrode 42 in the ninth opening region, and forming a second metal lead electrically connected to the temperature sensing electrode 5 in the tenth opening region.
In other embodiments, when the sensing electrode 42 and the temperature detection electrode 5 are formed in step S73, they may be processed separately, and the materials of both are not limited to platinum in this embodiment, but may also be titanium, a single metal material, or two metal materials, and the setting is specifically selected according to actual needs.
S81, forming a barrier layer 6 on the insulating layer 3 and the sensitive electrode 42, and forming a barrier opening 60 on the barrier layer 6, as shown in FIG. 22;
s82, removing the insulating layer 3 opposite to the blocking opening 60, and forming an isolation groove 30 between two adjacent gas-sensitive detection units 4, as shown in FIG. 23;
s83, removing the second silicon substrate 12 opposite to the isolation groove 30, and then removing the second silicon substrate 12 opposite to the gas chamber 101 by adopting a reactive ion etching process to form a structure shown in FIG. 24;
and S84, removing the patterned barrier layer 6, as shown in FIG. 25.
Specifically, the barrier layer 6 in this embodiment is a photoresist layer, and in S83, the second silicon substrate 12 facing the gas chamber 101 is removed by dry etching or wet etching.
And S9, forming a gas-sensitive layer 43 on each sensitive electrode 42, and finally annealing and cooling as shown in FIG. 26, wherein the annealed gas-sensitive layer 43 is in a porous shape and has high linearity and sensitivity.
Specifically, the four gas sensing layers 43 of the present embodiment include at least two gas sensing materials, the gas sensing layer 43 is a tin dioxide layer, a tungsten trioxide layer, or a zinc oxide layer, the precious metal in the gas sensing layer 43 may be platinum, gold, palladium, rhodium, iridium, or the like with a catalytic effect, and the precious metal can reduce a semiconductor barrier of the tin dioxide, tungsten trioxide, or zinc oxide, and promote selectivity between the gas and the piezoresistive pressure sensor. It should be noted that the annealing temperature and the annealing time in S9 belong to technical means commonly used in the art, and those skilled in the art can set the annealing temperature and the annealing time according to actual needs, and this embodiment is not specifically limited.
When the gas sensitive layer 43 is formed, a screen printing method, an evaporation method or an inkjet printing method is adopted, and the specific processing technology is determined according to actual needs.
It should be noted that, in other embodiments of the present invention, the processing steps may be adjusted according to actual needs, and this embodiment is not described again.
The processing method of the gas and piezoresistive pressure sensor provided by the embodiment solves the problem that the gas sensor and the pressure sensor in the prior art cannot be integrated together, the processed gas and piezoresistive pressure sensor is small in size and easy to place, can detect the concentration of a plurality of gases simultaneously, detects the air pressure in the current environment, is suitable for monitoring the gas components, the concentration and the current air pressure released by the battery before the thermal runaway of the battery occurs, and has great significance for predicting the thermal runaway of the battery.
Specifically, when the battery is in thermal runaway, gases such as hydrogen, carbon monoxide and VOC are generated, the internal pressure of the battery is increased, and the concentration and the change of the air pressure of various gases are detected, so that whether the battery is about to generate the thermal runaway or not is comprehensively judged.
The present embodiment further provides a gas and piezoresistive pressure sensor, which is manufactured by using the above method for processing a gas and piezoresistive pressure sensor, as shown in fig. 27 and 28, the gas and piezoresistive pressure sensor includes a substrate 1, a varistor 21, an insulating layer 3, and four gas-sensitive detection units 4, a gas chamber 101 and a pressure chamber 102 are disposed on the substrate 1, the varistor 21 is formed on a side of the substrate 1 facing the pressure chamber 102, the insulating layer 3 is formed on a side of the substrate 1 and covers the varistor 21, the four gas-sensitive detection units 4 are configured to detect a sensitive gas, an isolation groove 30 is disposed between two adjacent gas-sensitive detection units 4, each gas-sensitive detection unit 4 includes a heating element 41, a sensitive electrode 42, and a gas-sensitive layer 43, the heating element 41 is disposed in the insulating layer 3, the sensitive electrode 42 is disposed on a side of the insulating layer 3 away from the substrate 1, the gas-sensitive layer 43 covers the sensitive electrode 42, and the sensitive electrode 42 is configured to detect a resistivity of the gas-sensitive layer 43.
It should be noted that, in other embodiments of the present invention, the number of the gas-sensitive detection units 4 is not limited to four in this embodiment, and may also be more than four or less than four, and the setting is selected according to actual needs.
The four gas-sensitive layers 43 of this embodiment include at least two gas-sensitive materials, the gas-sensitive materials of the gas-sensitive layers 43 are doped with a noble metal, the gas-sensitive layers 43 are tin dioxide layers, tungsten trioxide layers, or zinc oxide layers, the noble metal in the gas-sensitive layers 43 may be platinum, gold, palladium, rhodium, iridium, or the like having a catalytic effect, and the noble metal can reduce a semiconductor barrier of tin dioxide, tungsten trioxide, or zinc oxide, and promote selectivity between the gas and the piezoresistive pressure sensor. The tin dioxide layer, the tungsten trioxide layer and the zinc oxide layer are sensitive to hydrogen, carbon monoxide and ammonia, and only the zinc oxide layer is sensitive to nitrogen dioxide, so that the concentration of the nitrogen dioxide can be detected. It should be noted that the gas-sensitive material of the gas-sensitive layer 43 in the present invention may be other materials besides tin dioxide, tungsten trioxide and zinc oxide, and is specifically determined according to the target gas to be detected, which is not specifically limited in this embodiment.
The gas and piezoresistive pressure sensor provided by the embodiment has the advantages of small volume, easiness in placement and capability of simultaneously detecting the concentration of a plurality of gases and the air pressure of the current environment, is suitable for detecting the gas concentration and the air pressure before the thermal runaway of the battery, has a decisive effect on predicting the thermal runaway of the battery, and can reduce the major safety fire accidents and the personnel property loss caused by the thermal runaway phenomenon of the battery.
As shown in fig. 28, the base 1 of the present embodiment includes a first silicon substrate 11 and a second silicon substrate 12 stacked in sequence, a gas chamber 101 and a pressure chamber 102 are disposed on a side of the first silicon substrate 11 connected to the second silicon substrate 12, a piezoresistor 21 is formed on the second silicon substrate 12, and an insulating layer 3 is disposed on a side of the second silicon substrate 12 away from the first silicon substrate 11. In other embodiments, the substrate 1 may also be an SOI wafer with the gas chamber 101 and the pressure chamber 102, and the substrate 1 is selected according to actual needs.
As shown in fig. 28, the insulating layer 3 of the present embodiment includes a first sub-insulating layer 31, a second sub-insulating layer 32, a third sub-insulating layer 33, a fourth sub-insulating layer 34, and a fifth sub-insulating layer 35 sequentially stacked in a direction away from the substrate 1, the heating element 41 is disposed in the third sub-insulating layer 33, and the sensing electrode 42 is formed on a side of the fifth sub-insulating layer 35 away from the fourth sub-insulating layer 34. Specifically, the second sub-insulating layer 32 and the fourth sub-insulating layer 34 of the present embodiment are both silicon nitride layers, and the first sub-insulating layer 31, the third sub-insulating layer 33, and the fifth sub-insulating layer 35 are all silicon oxide layers. It should be noted that, in other embodiments, the first sub insulating layer 31, the second sub insulating layer 32, the third sub insulating layer 33, the fourth sub insulating layer 34, and the fifth sub insulating layer 35 may also be passivation layers made of other insulating materials, and each sub insulating layer may be one layer, or may also be two or more layers, which is specifically set according to actual needs.
The insulating layer 3 opposite to the gas chamber 101 is of a five-layer structure, the insulating layer 3 opposite to the pressure chamber 102 comprises a first sub-insulating layer 31 and a second sub-insulating layer 32, the thickness of the second sub-insulating layer 32 opposite to the pressure chamber 102 is smaller than that of the second sub-insulating layer 32 opposite to the gas chamber 101, and the total thickness of the insulating layer 3 opposite to the pressure chamber 102 is controlled within 300nm, so that the finally formed gas and the piezoresistive pressure sensor have high sensitivity when detecting gas pressure.
As shown in fig. 29, the electrode width and the electrode gap of the sensing electrode 42 of this embodiment are not limited in this embodiment, the sensing electrode 42 is a titanium finger electrode or a platinum finger electrode, the four sensing electrodes 42 are arranged along the length direction of the substrate 1, and the length direction of each sensing electrode 42 forms a first preset included angle with the length direction of the substrate 1, as shown in fig. 27, the first preset included angle of this embodiment is 60 °, and compared with a structure in which the first preset included angle is 90 °, in the case that the widths of the substrates 1 are the same, the structure of this embodiment enables the total length of the sensing electrodes 42 of the gas and piezoresistive pressure sensor to be longer, so as to better detect the resistivity change of the gas sensing layer 43, and achieve higher detection accuracy. In other embodiments, the first preset included angle is not limited to 60 ° in this embodiment, and may be any angle between 30 ° and 90 ° or other angle values, which is specifically set according to actual needs.
As shown in fig. 30, the heating element 41 of the present embodiment is a serpentine and is a titanium electrode or a tungsten electrode, the four heating electrodes are arranged along the length direction of the substrate 1, and the length direction of each heating electrode is a second preset included angle with the length direction of the substrate 1, as shown in fig. 27, the second preset included angle of the present embodiment is 60 °, and compared with the structure in which the second preset included angle is 90 °, under the condition that the widths of the substrates 1 are the same, the structure of the present embodiment makes the total length of the heating electrodes of the gas and piezoresistive pressure sensor longer, so as to heat the gas sensitive layer 43 better, and achieve higher detection accuracy. In other embodiments, the second preset included angle is not limited to 60 ° in this embodiment, and may be any angle between 30 ° and 90 ° or other angle values, which is specifically set according to actual needs.
As shown in fig. 27 and 28, the gas and piezoresistive pressure sensor of the present embodiment further includes two temperature detection electrodes 5 for detecting temperature, the two temperature detection electrodes 5 are both disposed at the edge of the insulating layer 3, that is, the two temperature detection electrodes 5 are located at both ends of the gas and piezoresistive pressure sensor in the length direction, and each temperature detection electrode 5 extends in the width direction of the gas and piezoresistive pressure sensor. The temperature detection electrode 5 and the sensitive electrode 42 of the present embodiment are made of the same material, and this arrangement enables the sensitive electrode 42 and the temperature detection electrode 5 to be processed simultaneously, thereby simplifying the processing steps. In other embodiments of the present invention, the materials of the temperature detecting electrode 5 and the sensing electrode 42 may also be different, and are specifically selected according to actual needs, and at this time, the temperature detecting electrode 5 and the sensing electrode 42 need to be processed separately.
It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for processing a gas and piezoresistive pressure sensor is characterized by comprising the following steps:
providing a substrate with a gas chamber and a pressure chamber;
forming a piezoresistor opposite to the pressure chamber on the substrate;
forming an insulating layer with a first preset thickness on one side of the substrate;
forming heating elements of each gas-sensitive detection unit on the insulating layer, wherein the plurality of heating elements are arranged at intervals;
forming an insulating layer of a second preset thickness on the heating element and the insulating layer;
thinning the insulating layer opposite to the pressure chamber;
forming a sensitive electrode of each gas-sensitive detection unit on an insulating layer, wherein a plurality of sensitive electrodes are arranged at intervals and are in one-to-one correspondence with a plurality of heating elements;
forming a barrier layer on the insulating layer and the sensitive electrode, and forming a barrier opening on the barrier layer;
removing the insulating layer opposite to the blocking opening, and forming an isolation groove between every two adjacent gas-sensitive detection units;
removing at least a portion of the substrate between the insulating layer and the gas chamber;
a gas-sensitive layer is formed on each of the sensitive electrodes.
2. The method as claimed in claim 1, wherein the insulating layer having a first predetermined thickness includes a first sub-insulating layer, a second sub-insulating layer, and a third sub-insulating layer; and when the insulating layer with the second preset thickness is formed, the fourth sub-insulating layer and the fifth sub-insulating layer are sequentially formed.
3. The method of claim 1, wherein the sensing electrode is formed by forming a temperature sensing electrode at an edge of the insulating layer.
4. The method of claim 1, further comprising forming a lead layer on the substrate and electrically connected to the piezoresistor and a first metal PAD electrically connected to the lead layer, the first metal PAD being formed after the sense electrode and before the barrier layer.
5. A gas and piezoresistive pressure sensor, which is manufactured by the method for manufacturing a gas and piezoresistive pressure sensor according to any one of claims 1 to 4, and which comprises:
a substrate having a gas chamber and a pressure chamber disposed thereon;
the piezoresistor is formed on one side, which is opposite to the pressure chamber, of the substrate;
the insulating layer is formed on one side of the substrate and covers the piezoresistor;
a plurality of gas-sensitive detecting element for detect sensitive gas and adjacent two be equipped with the separation tank between the gas-sensitive detecting element, every the gas-sensitive detecting element all includes heating member, sensitive electrode and the gas-sensitive layer that corresponds the setting, the heating member is located in the insulating layer, sensitive electrode sets up the insulating layer deviates from one side of basement, the gas-sensitive layer covers on the sensitive electrode, sensitive electrode is used for detecting the resistivity of gas-sensitive layer.
6. The gas and piezoresistive pressure sensor according to claim 5, wherein the base comprises a first silicon substrate and a second silicon substrate which are stacked in sequence, the gas chamber and the pressure chamber are arranged on the side, connected with the second silicon substrate, of the first silicon substrate, the piezoresistor is formed on the second silicon substrate, and the insulating layer is arranged on the side, away from the first silicon substrate, of the second silicon substrate.
7. The gas and piezoresistive pressure sensor according to claim 5, wherein the insulating layer comprises a first sub-insulating layer, a second sub-insulating layer, a third sub-insulating layer, a fourth sub-insulating layer and a fifth sub-insulating layer, which are sequentially stacked in a direction away from the substrate, the heating element is arranged in the third sub-insulating layer, and the sensing electrode is formed on a side of the fifth sub-insulating layer, which is away from the fourth sub-insulating layer.
8. The gas and piezoresistive pressure sensor according to claim 7, wherein said second sub-insulating layer and said fourth sub-insulating layer are each a silicon nitride layer, and said first sub-insulating layer, said third sub-insulating layer and said fifth sub-insulating layer are each a silicon oxide layer.
9. The gas and piezoresistive pressure sensor according to claim 5, wherein said heating element is serpentine and is a titanium or tungsten electrode and said sensing electrode is a titanium or platinum finger electrode.
10. The gas and piezoresistive pressure sensor according to claim 5, further comprising a temperature detection electrode for detecting temperature, said temperature detection electrode being arranged at an edge of said insulating layer.
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| WO2025043766A1 (en) * | 2023-08-25 | 2025-03-06 | 宁德时代新能源科技股份有限公司 | Gas sensor, battery cell, battery and gas concentration measurement method |
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