CN115394673B - A variable temperature environment control device for thermal testing of large-size wafer-level substrates suitable for 3ω electrical method - Google Patents
A variable temperature environment control device for thermal testing of large-size wafer-level substrates suitable for 3ω electrical method Download PDFInfo
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- 238000012360 testing method Methods 0.000 title claims abstract description 83
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- 238000010291 electrical method Methods 0.000 title claims abstract description 20
- 239000000523 sample Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 29
- 230000033228 biological regulation Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000012544 monitoring process Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 10
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 230000010354 integration Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
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- 229910003460 diamond Inorganic materials 0.000 description 3
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- H01L22/10—Measuring as part of the manufacturing process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
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Abstract
The invention relates to a large-size wafer-level substrate thermal test temperature-changing environment control device suitable for a 3 omega electrical method, which comprises a device control cavity, a wafer-level substrate bearing table, a circuit probe interconnection module, a test temperature control module, a temperature display module and a vacuum control module, wherein the device control cavity is provided with a plurality of temperature sensors; the device control cavity is used for realizing the integrated fixation of other modules; the wafer-level substrate carrying table is used for fixing and controlling the temperature of large-size wafer-level substrate materials; the circuit probe interconnection module is used for solving the electrical signal input and monitoring of the test sample in the thermal conductivity test process; the test temperature control module is used for controlling the regulation and control of the environmental temperature in the device; the vacuum control module is used for controlling the vacuum degree regulation and control of the environment in the device. The invention solves the problem that the existing 3 omega electrical method thermal test device can not directly test the thermal conductivity of the large-size wafer substrate under any environmental condition, and improves the thermal test capability and environmental applicability based on the 3 omega electrical method.
Description
Technical Field
The invention relates to a wafer-level substrate material thermal test technology, in particular to a large-size wafer-level substrate thermal test temperature-changing environment control device suitable for a3 omega electrical method.
Background
At present, various semiconductor devices are made of large-size wafer materials in the development and production processes, and the heat conductivity of the wafer materials directly influences the heat dissipation capacity and the device performance of the semiconductor devices. Therefore, thermal test evaluation of semiconductor wafer materials is one of the important links to control in semiconductor development and production. At present, the thermal property test of the semiconductor substrate material with the micro-nano thickness mainly comprises an electrical method and a laser method, wherein the test of the substrate material with the hundred-micrometer thickness mainly comprises a3 omega electrical method test. However, because the thermal test needs to be tested under a specific environment temperature and vacuum environment, the evaluation of the heat transfer characteristics of the large-size wafer material is difficult to achieve, and no unified and standard test method exists at present. Therefore, development of a temperature-changing environment control device for thermal testing of a large-size wafer-level substrate, which is suitable for a3 omega electrical method, is urgently needed at present, the thermal testing capability and the environment applicability based on the 3 omega electrical method are improved, and thermal conductivity testing analysis of the large-size wafer substrate under any environment condition is met.
Disclosure of Invention
In order to overcome the defects of the prior art and solve the technical problem of thermal testing of large-size wafer-level substrate materials by using a 3 omega electrical method, the invention provides a temperature-changing environment control device for thermal testing of large-size wafer-level substrates, which is suitable for the 3 omega electrical method.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows: a temperature change environment control device for thermal testing of a large-size wafer-level substrate suitable for a 3w electrical method comprises a device control cavity, a wafer-level substrate bearing table, a circuit probe interconnection module, a testing temperature control module, a temperature display module and a vacuum control module;
The device control cavity is used for realizing the integrated fixation of the wafer-level substrate bearing table, the circuit probe interconnection module, the test temperature control module, the temperature display module and the vacuum control module, and internally comprises a heating circuit, a water circulation pipeline, an air circuit pipeline and a thermosensitive circuit pipeline;
The central area of the wafer-level substrate bearing table is internally provided with a temperature heat transmitter, so that the material support and the temperature monitoring of the wafer-level substrate are realized;
The circuit probe interconnection module comprises a plurality of groups of probes, and the probes can be regulated and controlled in three-dimensional direction positions so as to realize the interconnection of electrical signals of the test sample;
the test temperature control module comprises an annular heater, wherein a resistance material of the annular heater is designed into an annular structure to form a cylindrical radiation temperature control cavity, and a wafer-level substrate bearing table is positioned at the center of the cylindrical temperature cavity;
The temperature display module adopts a thermosensitive temperature heat transmitter, is integrated in the device control cavity and the wafer-level substrate bearing table, and the thermosensitive test head is positioned at the center of the wafer-level substrate bearing table and is designed into a flexible and elastic structure, directly contacts with a test sample, and can ensure that the thermosensitive test head and the bearing table are positioned on the same horizontal plane after contacting and is used for measuring the actual temperature of a large-size wafer substrate;
the vacuum control module is integrated in the device control cavity and is used for controlling the vacuum degree regulation of the environment in the device.
Furthermore, the control cavity of the device is made of aluminum or steel materials.
Further, the device control cavity comprises a cavity cover plate, a cavity frame, a circuit probe interconnection support frame and a wafer-level substrate bearing table support frame, wherein the cavity frame comprises a heating circuit, a water circulation pipeline, a gas circuit pipeline and a thermosensitive circuit pipeline and is used for realizing temperature and vacuum environment control and monitoring; the circuit probe interconnection support frame and the cavity frame jointly support the circuit probe interconnection module to realize the intercommunication of internal and external circuits of the cavity; the supporting frame of the wafer-level substrate supporting table contains a thermosensitive circuit pipeline, is positioned at the center and has the diameter of 10-15mm, and supports the wafer-level substrate supporting table.
Further, the wafer level substrate carrier is 5 inches in size.
Further, the wafer-level substrate bearing table is made of copper material, and the surface of the wafer-level substrate bearing table is plated with gold.
Furthermore, the circuit probe interconnection module further comprises a probe control arm and an interconnection electric path, the probe control arm realizes the three-dimensional position regulation and control of the probe, the integration of the probe and the interconnection electric path is realized, and the gold plating process is adopted on the surface of the probe.
Further, the circuit probe interconnection module comprises 4 groups of probes, and the probes are of a right-angle downward probe structure.
Further, the test temperature control module further comprises a heating circuit, a water circulation pipeline and a thermoelectric controller, wherein the heating circuit and the water circulation pipeline are embedded into a control cavity of the device, so that the control of the external thermoelectric controller on the annular heater is realized, and the temperature control range is 20-500 ℃.
Furthermore, the temperature display module also comprises a thermosensitive circuit pipeline and a display, wherein the thermosensitive circuit pipeline is integrated in the device control cavity to realize interconnection integration of the thermosensitive test head and the peripheral display; the height of the annular heater is 125mm-200mm, and the diameter is 5-10mm.
Further, the thermal test head is higher than the bearing table by 50um.
Compared with the prior art, the invention has the beneficial effects that: the testing device improves the thermal testing capability and environmental applicability based on a3 omega electrical method, and solves the technical bottleneck of directly testing and analyzing the thermal conductivity of the wafer substrate with the large size below 5 inches at the temperature of 20-500 ℃. And a temperature field of the test bench is formed by adopting a radiation mode, so that the test precision and capability are improved.
Drawings
FIG. 1 is a schematic diagram of a temperature change environment control device for thermal testing of a large-sized wafer level substrate suitable for use in a3ω electrical method.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings.
As shown in FIG. 1, the large-size wafer-level substrate thermal test temperature-changing environment control device suitable for the 3 omega electrical method comprises a device control cavity A, a wafer-level substrate bearing table B, a circuit probe interconnection module C, a test temperature control module D, a temperature display module E and a vacuum control module F.
As shown in fig. 1a, the device control cavity includes a cavity cover plate A1, a cavity frame, a circuit probe interconnection support A2, and a wafer level substrate carrier support A3, for implementing integrated fixation of a wafer level substrate carrier B, a circuit probe interconnection module C, a test temperature control module D, a temperature display module E, and a vacuum control module F. The control cavity of the device adopts high-temperature resistant and low-heat conduction materials such as aluminum or steel, and the like, which is beneficial to the formation of a temperature field; the cavity cover plate A1 is integrated with the cavity frame by adopting mechanical screws and is used for taking and placing samples, and the cavity frame comprises a heating circuit D2, a water circulation pipeline D3, an air circuit pipeline and a thermosensitive circuit pipeline E2 and is used for realizing temperature and vacuum environment control and monitoring; the circuit probe interconnection support frame A2 and the cavity frame jointly support the circuit probe interconnection module C to realize the intercommunication of internal and external circuits of the cavity; the support frame A3 of the wafer-level substrate bearing table contains a heat-sensitive circuit pipeline E2, is positioned at the center, has the diameter of 10-15mm, supports the wafer-level substrate bearing table B, has the advantages that the temperature of the wafer-level substrate bearing table is too fast in downward heat conduction due to the overlarge diameter, and has insufficient supporting strength due to the overlarge diameter, so that the design of the diameter is favorable for maintaining the temperature field of the wafer-level substrate bearing table.
As shown in the figure 1B, the wafer-level substrate carrying table is 5 inches in size, a copper material with good heat conduction performance is adopted, the surface is plated with gold, the stability at high temperature can be effectively ensured, a temperature heat transmitter E1 is arranged in a central region of the wafer-level substrate carrying table, the warping degree of the whole carrying table is less than or equal to 30um, the contact of a table top, a temperature sensor and a test wafer substrate material is effectively ensured, and the wafer-level substrate material is supported and the temperature is monitored. And the bearing table is positioned at the center of the cylindrical temperature cavity, so that the temperature uniformity of the wafer-level substrate bearing table is ensured.
As shown in fig. 1C, a circuit probe interconnection module includes a probe C1, a probe control arm C2, and an interconnection electrical path C3, so as to implement electrical signal interconnection of the test sample. The probe C1 is designed into a right-angle downward-extending structure, the downward-extending depth reaches the surface of the wafer-level substrate bearing table, and the downward-extending structure solves the compatibility of the probe interconnection module and the test temperature control module; the probe control arm C2 realizes the three-dimensional position regulation and control of the probe C1, meets the test of each area of the large-size wafer substrate material, realizes the integration of the probe C1 and the interconnection electric path C3, and ensures the low resistance and the high temperature stability by adopting a gold plating process on the surface of the probe C1.
Shown as D in fig. 1 is a test temperature control module comprising a ring heater D1, a heating circuit D2, a water circulation pipe D3, and a thermoelectric controller. The annular heater D1 is formed by designing a resistance material into an annular structure to form a cylindrical radiation temperature control cavity, wherein the height of the annular structure is 125-200 mm, and the annular structure is too low to be beneficial to forming a uniform radiation temperature control cavity and too high to be beneficial to testing interconnection compatibility of samples; the diameter of the resistance material is designed to be 5-10mm, the space for forming the annular design is consistent with the diameter of the resistance material, and the uniformity of the radiation temperature control cavity can be improved. Meanwhile, the wafer-level substrate bearing table B is positioned at the center of the cylindrical temperature cavity; the heating circuit D2 and the water circulation pipeline D3 are embedded into the control cavity A of the device, so that the control of the external thermoelectric controller on the annular heater D1 is realized, and the control of the test temperature of 20-500 ℃ can be realized.
As shown in fig. 1E, a temperature display module, which includes a thermal test head E1, a thermal circuit tube E2, and a display, is integrated into the device control chamber and the wafer level substrate carrier. The thermal sensitive test head E1 is positioned at the center of the wafer-level substrate bearing table, is 50um higher than the bearing table, is designed into a flexible and elastic structure, is directly contacted with a test sample, can ensure that the thermal sensitive test head E1 and the bearing table are positioned on the same horizontal plane after being contacted, and is used for measuring the actual temperature of a large-size wafer substrate; the thermosensitive circuit pipeline E2 is integrated in the device control cavity, so that interconnection integration of the thermosensitive test head and the peripheral display is realized.
And as shown in F in FIG. 1, a vacuum control module is integrated in the device control cavity A and is used for controlling the vacuum degree regulation of the environment in the device, so that the test environment with the vacuum degree smaller than 10Pa can be realized, the influence of convection in the test process is solved, and the test precision is improved.
The invention is characterized in that a testing temperature control module is introduced, a cylindrical radiation temperature control cavity is formed through ingenious annular heater design, the wafer at the center of the temperature cavity is ensured to be uniformly heated, in the 3 omega electrical method test, the electric signal is not influenced by the temperature control module heater, and the test precision and the temperature change test condition are improved. Meanwhile, the wafer-level substrate carrying table is designed to be 5 inches in size and is positioned in the center of the cylindrical temperature cavity, so that the test of large-size wafer materials is realized.
The following is a description of specific tests.
A 3 inch diamond substrate material was selected, the substrate material thickness being 200um. Firstly, placing a 3-inch diamond wafer substrate material on a wafer-level substrate bearing table, adjusting probes of a circuit probe interconnection module to complete circuit interconnection of a test sample, and mechanically integrating a cavity cover plate to enable a test environment to be in a sealed environment. Secondly, the vacuum control module is regulated to enable the testing vacuum degree in the cavity to be below 10Pa (here, 5Pa is taken), then the testing temperature control module is regulated, and the temperature of the sample to be tested is enabled to reach the target value (here, 150 ℃) through the temperature display module. Finally, a test procedure of a 3 omega electrical method was started to test that the thermal conductivity of the 3 inch diamond wafer substrate at 150 ℃ was 1269W/(m·k) ±27W/(m·k).
The above specific embodiments and examples are specific support for the temperature changing on-chip testing system and the testing method of the amplifier provided by the invention, and the protection scope of the invention cannot be limited by the specific support, and any equivalent change or equivalent modification made on the basis of the technical scheme according to the technical idea provided by the invention still belongs to the protection scope of the technical scheme of the invention.
Claims (4)
1. The device is characterized by comprising a device control cavity, a wafer-level substrate bearing table, a circuit probe interconnection module, a test temperature control module, a temperature display module and a vacuum control module;
The device control cavity is used for realizing the integrated fixation of the wafer-level substrate bearing table, the circuit probe interconnection module, the test temperature control module, the temperature display module and the vacuum control module, and comprises a cavity cover plate, a cavity frame, a circuit probe interconnection support frame and a wafer-level substrate bearing table support frame, wherein the cavity frame comprises a heating circuit, a water circulation pipeline, an air circuit pipeline and a thermosensitive circuit pipeline and is used for realizing the control and monitoring of the temperature and the vacuum environment; the circuit probe interconnection support frame and the cavity frame jointly support the circuit probe interconnection module to realize the intercommunication of internal and external circuits of the cavity; the supporting frame of the wafer-level substrate carrying table contains a thermosensitive circuit pipeline, is positioned at the center, has the diameter size of 10-15 mm and supports the wafer-level substrate carrying table;
the size of the wafer-level substrate carrying table is 5 inches, the wafer-level substrate carrying table is made of copper material, and the surface of the wafer-level substrate carrying table is plated with gold; a temperature heat transmitter is arranged in the central area of the wafer-level substrate bearing table, so that the material support and the temperature monitoring of the wafer-level substrate are realized;
the circuit probe interconnection module comprises a plurality of groups of probes, and the probes can be regulated and controlled in three-dimensional direction positions so as to realize the interconnection of electrical signals of the test sample; the circuit probe interconnection module further comprises a probe control arm and an interconnection circuit, wherein the probe control arm realizes the three-dimensional position regulation and control of the probe, the integration of the probe and the interconnection circuit is realized, and the gold plating process is adopted on the surface of the probe;
The test temperature control module comprises an annular heater, wherein a resistance material of the annular heater is designed into an annular structure to form a cylindrical radiation temperature control cavity, and a wafer-level substrate bearing table is positioned at the center of the cylindrical temperature cavity; the test temperature control module further comprises a heating circuit, a water circulation pipeline and a thermoelectric controller, wherein the heating circuit and the water circulation pipeline are embedded into a control cavity of the device, so that the control of the external thermoelectric controller on the annular heater is realized, and the temperature control range is 20-500 ℃;
the temperature display module adopts a thermosensitive temperature heat transmitter, is integrated in the device control cavity and the wafer-level substrate bearing table, and is characterized in that a thermosensitive test head is positioned at the center of the wafer-level substrate bearing table and is designed into a flexible and elastic structure, and is directly contacted with a test sample, and the thermosensitive test head and the bearing table are ensured to be positioned on the same horizontal plane after being contacted and used for measuring the actual temperature of a large-size wafer substrate; the temperature display module also comprises a thermosensitive circuit pipeline and a display, wherein the thermosensitive circuit pipeline is integrated in the device control cavity to realize interconnection integration of the thermosensitive test head and the peripheral display; the height of the annular heater is 125mm-200mm, and the diameter is designed to be 5-10mm;
the vacuum control module is integrated in the device control cavity and is used for controlling the vacuum degree regulation of the environment in the device.
2. The device for controlling the temperature change environment for the thermal testing of the large-size wafer-level substrate suitable for the 3 omega electrical method according to claim 1, wherein the device control cavity is made of aluminum or steel materials.
3. The device for controlling the temperature change environment of the thermal test of the large-size wafer-level substrate suitable for the 3 omega electrical method according to claim 1, wherein the circuit probe interconnection module comprises 4 groups of probes, and the probes are of a right-angle downward-detecting structure.
4. The device for controlling the temperature change environment for thermal testing of large-sized wafer level substrates suitable for use in a3 ω electrical process according to claim 1, wherein the thermal testing head is higher than the carrier stage by 50um.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3155802U (en) * | 2009-09-17 | 2009-12-03 | 日本碍子株式会社 | Wafer mounting device |
| CN112710693A (en) * | 2020-12-10 | 2021-04-27 | 中国电子科技集团公司第五十五研究所 | Device and method for improving 3 omega method film thermal conductivity test precision |
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| GB2478134B (en) * | 2010-02-25 | 2012-01-11 | Micro Materials Ltd | Heating in material testing apparatus |
| US10241149B2 (en) * | 2015-09-24 | 2019-03-26 | The United States Of America, As Represented By The Secretary Of Commerce | Massively parallel wafer-level reliability system and process for massively parallel wafer-level reliability testing |
| JP7094211B2 (en) * | 2018-11-29 | 2022-07-01 | 東京エレクトロン株式会社 | Test wafer and its manufacturing method |
| JP7257880B2 (en) * | 2019-05-23 | 2023-04-14 | 東京エレクトロン株式会社 | Test Wafer and Test Method |
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| JP3155802U (en) * | 2009-09-17 | 2009-12-03 | 日本碍子株式会社 | Wafer mounting device |
| CN112710693A (en) * | 2020-12-10 | 2021-04-27 | 中国电子科技集团公司第五十五研究所 | Device and method for improving 3 omega method film thermal conductivity test precision |
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