CN115377231B - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN115377231B CN115377231B CN202211298934.9A CN202211298934A CN115377231B CN 115377231 B CN115377231 B CN 115377231B CN 202211298934 A CN202211298934 A CN 202211298934A CN 115377231 B CN115377231 B CN 115377231B
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
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- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
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Abstract
Description
技术领域Technical field
本申请实施例涉及光伏领域,特别涉及一种太阳能电池及光伏组件。Embodiments of the present application relate to the field of photovoltaics, and in particular to a solar cell and a photovoltaic module.
背景技术Background technique
影响太阳能电池性能(例如光电转换效率)的原因包括光学损失以及电学损失,光学损失包括电池前表面反射损失、接触栅线的阴影损失以及长波段的非吸收损失等,电学损失包括半导体表面及体内的光生载流子复合、半导体和金属栅线的接触电阻以及金属和半导体的接触电阻等的损失。Reasons that affect the performance of solar cells (such as photoelectric conversion efficiency) include optical losses and electrical losses. Optical losses include reflection losses on the front surface of the cell, shadow losses of contact grid lines, and non-absorption losses in the long wavelength band. Electrical losses include semiconductor surface and internal body losses. Loss of photogenerated carrier recombination, contact resistance between semiconductor and metal gate lines, and contact resistance between metal and semiconductor.
太阳能电池片中通过设置副栅和主栅对电池片产生的电流的汇集和输出,并通过设置在主栅上的焊盘将电池片产生的电流传输到组件端。然而现有技术中的太阳能电池对电流的收集能力较弱从而影响太阳能电池的光电转换效率的提升。In the solar cell, the current generated by the cell is collected and output by setting the auxiliary grid and the main grid, and the current generated by the cell is transmitted to the component end through the pad provided on the main grid. However, the current collection ability of solar cells in the prior art is weak, which affects the improvement of the photoelectric conversion efficiency of the solar cells.
发明内容Contents of the invention
本申请实施例提供一种太阳能电池及光伏组件,至少有利于提升太阳能电池的光电转换效率。Embodiments of the present application provide a solar cell and a photovoltaic component, which are at least conducive to improving the photoelectric conversion efficiency of the solar cell.
根据本申请一些实施例,本申请实施例一方面提供一种太阳能电池,包括:基底,基底具有第一边缘以及第二边缘,第一边缘为基底沿第一方向的边缘,第二边缘为基底沿第二方向的边缘;钝化层,钝化层位于基底上;多个副电极,多个副电极在基底上沿第二方向间隔排布,副电极沿第一方向延伸,副电极贯穿钝化层与基底接触;至少一个主电极,主电极位于钝化层表面,主电极包括:两个靠近第二边缘的连接垫;连接线,连接线靠近第二边缘的端口闭合,连接线除端口以外的部分表面与每一连接垫接触;位于连接垫与相邻的第二边缘之间的连接线的第一截面积大于位于连接垫之间的连接线的第二截面积。According to some embodiments of the present application, on the one hand, embodiments of the present application provide a solar cell, including: a substrate, the substrate has a first edge and a second edge, the first edge is an edge of the substrate along a first direction, and the second edge is an edge of the substrate. The edge along the second direction; a passivation layer, the passivation layer is located on the substrate; a plurality of secondary electrodes, the plurality of secondary electrodes are arranged at intervals along the second direction on the substrate, the secondary electrodes extend along the first direction, and the secondary electrodes penetrate the passivation The passivation layer is in contact with the substrate; at least one main electrode is located on the surface of the passivation layer. The main electrode includes: two connection pads close to the second edge; a connection line, the port of the connection line close to the second edge is closed, and the connection line except the port The outer part of the surface is in contact with each connection pad; the first cross-sectional area of the connection line between the connection pad and the adjacent second edge is greater than the second cross-sectional area of the connection line between the connection pads.
在一些实施例中,第一截面积与第二截面积的差值与连接垫与相邻的第二边缘的间距大小成正比。In some embodiments, the difference between the first cross-sectional area and the second cross-sectional area is proportional to the distance between the connecting pad and the adjacent second edge.
在一些实施例中,位于连接垫与第二边缘之间的连接线的第一宽度大于位于连接垫之间的连接线的第二宽度。In some embodiments, the first width of the connection line between the connection pads and the second edge is greater than the second width of the connection line between the connection pads.
在一些实施例中,还包括:至少一个第二连接垫,第二连接垫位于相邻的连接垫之间;连接线与每一第二连接垫接触;对同一主电极,位于两个相邻的第二连接垫之间的连接线的第三截面积最小。In some embodiments, it also includes: at least one second connection pad, the second connection pad is located between adjacent connection pads; the connection line is in contact with each second connection pad; for the same main electrode, two adjacent connection pads are located The third cross-sectional area of the connection line between the second connection pads is the smallest.
在一些实施例中,位于连接垫与第二连接垫之间的连接线的第四截面积大于等于第三截面积。In some embodiments, the fourth cross-sectional area of the connecting line between the connecting pad and the second connecting pad is greater than or equal to the third cross-sectional area.
在一些实施例中,连接垫的面积大于第二连接垫的面积。In some embodiments, the area of the connection pad is greater than the area of the second connection pad.
在一些实施例中,主电极包括:两个第一主电极,第一主电极靠近第一边缘;至少一条第二主电极,第二主电极位于相邻的第一主电极之间,第二主电极位于钝化层表面。In some embodiments, the main electrodes include: two first main electrodes, the first main electrode is close to the first edge; at least one second main electrode, the second main electrode is located between adjacent first main electrodes, and the second main electrode is located between adjacent first main electrodes. The main electrode is located on the surface of the passivation layer.
在一些实施例中,第一主电极包括:两个靠近第二边缘的第一子连接垫,第一连接线,且第一连接线靠近第二边缘的端口闭合,第一连接线除端口以外的部分表面与每一第一子连接垫接触;位于第一子连接垫与相邻的第二边缘之间的第一连接线的第五截面积大于位于第一子连接垫之间的第一连接线的第六截面积。In some embodiments, the first main electrode includes: two first sub-connection pads close to the second edge, a first connection line, and a port of the first connection line close to the second edge is closed, and the first connection line is other than the port. Part of the surface is in contact with each first sub-connection pad; the fifth cross-sectional area of the first connection line between the first sub-connection pad and the adjacent second edge is larger than the first connection line between the first sub-connection pads. The sixth cross-sectional area of the connecting line.
在一些实施例中,第二主电极包括:第二连接线,第二连接线靠近第二边缘的端口闭合,第一连接线的截面积大于等于第二连接线的截面积。In some embodiments, the second main electrode includes: a second connection line, a port of the second connection line close to the second edge is closed, and the cross-sectional area of the first connection line is greater than or equal to the cross-sectional area of the second connection line.
在一些实施例中,第二主电极还包括:第二子连接垫,第二子连接垫靠近第二边缘,第二子连接垫与第二连接线接触;沿第二方向,第一子连接垫与第二边缘的第一距离大于第二子连接垫与第二边缘的第二距离。In some embodiments, the second main electrode further includes: a second sub-connection pad, the second sub-connection pad is close to the second edge, and the second sub-connection pad is in contact with the second connection line; along the second direction, the first sub-connection pad The first distance of the pad from the second edge is greater than the second distance of the second sub-connection pad from the second edge.
在一些实施例中,第一边缘与第二边缘的交界处具有倒角,第一主电极靠近倒角,沿第二方向,第一子连接垫位于倒角沿第二方向以外的边缘区域。In some embodiments, the intersection of the first edge and the second edge has a chamfer, the first main electrode is close to the chamfer along the second direction, and the first sub-connection pad is located in an edge area outside the chamfer along the second direction.
在一些实施例中,太阳能电池为背接触电池,副电极包括:沿第一方向间隔排布的第一电极与第二电极;主电极包括:间隔排布的第一栅线结构以及第二栅线结构,第一栅线结构与第一电极电连接,第二栅线结构与第二电极电连接。In some embodiments, the solar cell is a back-contact cell, and the secondary electrode includes: a first electrode and a second electrode spaced apart along the first direction; the main electrode includes: a first grid structure and a second grid spaced apart. Line structure, the first gate line structure is electrically connected to the first electrode, and the second gate line structure is electrically connected to the second electrode.
在一些实施例中,第一栅线结构与第二栅线结构沿第一方向错位排布。In some embodiments, the first gate line structure and the second gate line structure are staggered along the first direction.
在一些实施例中,沿第一方向,靠近第一边缘的副电极的截面积大于远离第一边缘的副电极的截面积。In some embodiments, along the first direction, the cross-sectional area of the secondary electrode close to the first edge is larger than the cross-sectional area of the secondary electrode far from the first edge.
根据本申请一些实施例,本申请实施例另一方面还提供一种光伏组件,包括:电池串,电池串由多个如上述实施例任一项太阳能电池连接而成;封装层,封装层用于覆盖电池串的表面;盖板,盖板用于覆盖封装层远离电池串的表面。According to some embodiments of the present application, on the other hand, the embodiments of the present application also provide a photovoltaic module, including: a battery string, the battery string is composed of a plurality of solar cells as in any of the above embodiments; an encapsulation layer, the encapsulation layer is The cover plate is used to cover the surface of the battery string; the cover plate is used to cover the surface of the packaging layer away from the battery string.
本申请实施例提供的技术方案至少具有以下优点:The technical solutions provided by the embodiments of this application have at least the following advantages:
本申请实施例提供的太阳能电池中,主电极包含连接垫以及连接线,可以通过设置连接线的宽度较细降低有效遮光面积,同时减少电阻损失,从而提高组件总功率。此外,由于组成主栅的连接线分布更密集,主栅和细栅之间的接触点可以更多,在硅片隐裂和微裂部位电流传导的路径更加优化,因此由于微裂造成的损失被大大减小,有利于提高产线的产量。连接垫与相邻的第二边缘之间的连接线的第一截面积大于位于连接垫之间的连接线的第二截面积,位于第二边缘以及连接垫的连接线的宽度较大,可以缓解连接垫的焊接应力,以使焊带与主电极之间形成良好的接触;此外,较宽的连接线可以缓解连接垫的收集压力,提升载流子的传输能力,较宽的连接线具有较多的传输面积用于收集电流,较细的连接线可以减少遮挡面积,降低光学损失。In the solar cell provided by the embodiment of the present application, the main electrode includes a connecting pad and a connecting wire. By setting the width of the connecting wire to be thinner, the effective shading area can be reduced, while resistance loss can be reduced, thereby increasing the total power of the module. In addition, since the connection lines that make up the main gate are more densely distributed, there can be more contact points between the main gate and the fine gate, and the current conduction path at the silicon wafer cracks and micro-cracks is more optimized, so the loss caused by micro-cracks is greatly reduced, which is beneficial to improving the output of the production line. The first cross-sectional area of the connecting line between the connecting pad and the adjacent second edge is greater than the second cross-sectional area of the connecting line between the connecting pads, and the width of the connecting line located at the second edge and the connecting pad is larger, and can Relieve the welding stress of the connection pad to form good contact between the solder strip and the main electrode; in addition, the wider connection line can relieve the collection pressure of the connection pad and improve the carrier transmission capacity. The wider connection line has More transmission area is used to collect current, and thinner connection lines can reduce the shielding area and reduce optical loss.
附图说明Description of the drawings
一个或多个实施例通过与之对应的附图中的图进行示例性说明,这些示例性说明并不构成对实施例的限定,除非有特别申明,附图中的图不构成比例限制;为了更清楚地说明本申请实施例或传统技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。One or more embodiments are exemplified by the figures in the corresponding drawings. These illustrative illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the figures in the accompanying drawings do not constitute a scale limit; in order to To more clearly illustrate the technical solutions in the embodiments of the present application or traditional technologies, the following will briefly introduce the drawings needed in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. , for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without exerting creative efforts.
图1为本申请一实施例提供的太阳能电池的一种结构示意图;Figure 1 is a schematic structural diagram of a solar cell provided by an embodiment of the present application;
图2为本申请一实施例提供的太阳能电池的一种局部结构示意图;Figure 2 is a partial structural schematic diagram of a solar cell provided by an embodiment of the present application;
图3为本申请一实施例提供的太阳能电池的另一种结构示意图;Figure 3 is another structural schematic diagram of a solar cell provided by an embodiment of the present application;
图4为本申请一实施例提供的太阳能电池中第一主电极的一种结构示意图;Figure 4 is a schematic structural diagram of the first main electrode in the solar cell provided by an embodiment of the present application;
图5为本申请一实施例提供的太阳能电池中第一主电极的另一种结构示意图;Figure 5 is another structural schematic diagram of the first main electrode in the solar cell provided by an embodiment of the present application;
图6为本申请一实施例提供的太阳能电池中第二主电极的一种结构示意图;Figure 6 is a schematic structural diagram of the second main electrode in the solar cell provided by an embodiment of the present application;
图7为本申请一实施例提供的太阳能电池中副电极的一种结构示意图;Figure 7 is a schematic structural diagram of a secondary electrode in a solar cell provided by an embodiment of the present application;
图8为本申请一实施例提供的太阳能电池的又一种结构示意图;Figure 8 is another structural schematic diagram of a solar cell provided by an embodiment of the present application;
图9为本申请一实施例提供的太阳能电池的另一种局部结构示意图;Figure 9 is another partial structural schematic diagram of a solar cell provided by an embodiment of the present application;
图10为本申请一实施例提供的光伏组件的一种结构示意图。Figure 10 is a schematic structural diagram of a photovoltaic module provided by an embodiment of the present application.
具体实施方式Detailed ways
由背景技术可知,现有技术的太阳能电池的光电转换效率欠佳。It can be known from the background art that the photoelectric conversion efficiency of solar cells in the prior art is not good.
分析发现,导致现有技术的太阳能电池的光电转换效率欠佳的原因之一在于:常规太阳能电池中,由于制备基底的单晶硅工艺提炼限制,单晶硅棒目前只能做成圆的,硅棒出来后切片,就是把硅棒截面切成单晶硅片的样子(面积经过计算后,在一个单位内既能最大限度的增大光照面积,又能最大限度的节约硅棒材料,还便于电池片、组件生产),常在基底的第一边缘与第二边缘的交界处设置倒角,降低硅片外部的应力,避免硅片的边角产生微损伤。同时为保证焊接时焊带不超出电池倒角处,焊点与电池倒角需要存在一定的距离,从而使倒角区域的载流子输运路径过长,导致输运损失增加。此外,如果焊点或者焊带靠近太阳能电池的边缘,后续层压过程中有可能造成太阳能电池的隐裂,影响太阳能电池的性能。Analysis found that one of the reasons for the poor photoelectric conversion efficiency of existing technology solar cells is that in conventional solar cells, due to limitations in the refining process of single crystal silicon for preparing the substrate, single crystal silicon rods can currently only be made into round shapes. After the silicon rod comes out, it is sliced, which is to cut the cross section of the silicon rod into single crystal silicon wafers (after the area is calculated, it can not only maximize the illumination area in one unit, but also save the silicon rod material to the maximum extent, and also save the silicon rod material to the greatest extent. To facilitate the production of cells and components), chamfers are often provided at the junction of the first edge and the second edge of the substrate to reduce the stress on the outside of the silicon wafer and avoid micro damage to the corners of the silicon wafer. At the same time, in order to ensure that the welding strip does not exceed the chamfer of the battery during welding, there needs to be a certain distance between the welding point and the chamfer of the battery, which makes the carrier transport path in the chamfer area too long, resulting in increased transport losses. In addition, if the solder joints or ribbons are close to the edge of the solar cell, it may cause cracks in the solar cell during the subsequent lamination process and affect the performance of the solar cell.
本申请实施例提供一种太阳能电池,主电极包含连接垫以及连接线,可以通过设置连接线的宽度较细降低有效遮光面积,同时减少电阻损失,从而提高组件总功率。此外,由于组成主栅的连接线分布更密集,主栅和细栅之间的接触点可以更多,在硅片隐裂和微裂部位电流传导的路径更加优化,因此由于微裂造成的损失被大大减小,有利于提高产线的产量。连接垫与相邻的第二边缘之间的连接线的第一截面积大于位于连接垫之间的连接线的第二截面积,位于第二边缘以及连接垫的连接线的宽度较大,可以缓解连接垫的焊接应力,以使焊带与主电极之间形成良好的接触;此外,较宽的连接线可以缓解连接垫的收集压力,提升载流子的传输能力,较宽的连接线具有较多的传输面积用于收集电流。Embodiments of the present application provide a solar cell. The main electrode includes a connecting pad and a connecting line. By setting the width of the connecting line to be thinner, the effective shading area can be reduced, while resistance loss can be reduced, thereby increasing the total power of the module. In addition, since the connection lines that make up the main gate are more densely distributed, there can be more contact points between the main gate and the fine gate, and the current conduction path at the silicon wafer cracks and micro-cracks is more optimized, so the loss caused by micro-cracks is greatly reduced, which is beneficial to improving the output of the production line. The first cross-sectional area of the connecting line between the connecting pad and the adjacent second edge is greater than the second cross-sectional area of the connecting line between the connecting pads, and the width of the connecting line located at the second edge and the connecting pad is larger, and can Relieve the welding stress of the connection pad to form good contact between the solder strip and the main electrode; in addition, the wider connection line can relieve the collection pressure of the connection pad and improve the carrier transmission capacity. The wider connection line has More transmission area is used to collect current.
下面将结合附图对本申请的各实施例进行详细的阐述。然而,本领域的普通技术人员可以理解,在本申请各实施例中,为了使读者更好地理解本申请而提出了许多技术细节。但是,即使没有这些技术细节和基于以下各实施例的种种变化和修改,也可以实现本申请所要求保护的技术方案。Each embodiment of the present application will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art can understand that in each embodiment of the present application, many technical details are provided to enable readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in this application can also be implemented.
图1为本申请一实施例提供的太阳能电池的一种结构示意图;图2为本申请一实施例提供的太阳能电池的一种局部结构示意图;图3为本申请一实施例提供的太阳能电池的另一种结构示意图;图4为本申请一实施例提供的太阳能电池中第一主电极的一种结构示意图;图5为本申请一实施例提供的太阳能电池中第一主电极的另一种结构示意图;图6为本申请一实施例提供的太阳能电池中第二主电极的一种结构示意图;图7为本申请一实施例提供的太阳能电池中副电极的一种结构示意图;图8为本申请一实施例提供的太阳能电池的又一种结构示意图;图9为本申请一实施例提供的太阳能电池的另一种局部结构示意图。Figure 1 is a schematic structural diagram of a solar cell provided by an embodiment of the present application; Figure 2 is a partial structural schematic diagram of a solar cell provided by an embodiment of the present application; Figure 3 is a schematic diagram of a solar cell provided by an embodiment of the present application. Another schematic structural diagram; Figure 4 is a schematic structural diagram of the first main electrode in the solar cell provided by one embodiment of the present application; Figure 5 is another schematic structural diagram of the first main electrode in the solar cell provided by one embodiment of the present application. Structural schematic diagram; Figure 6 is a schematic structural diagram of the second main electrode in the solar cell provided by one embodiment of the present application; Figure 7 is a schematic structural diagram of the secondary electrode in the solar cell provided by one embodiment of the present application; Figure 8 is Another schematic structural diagram of a solar cell provided by an embodiment of the present application; FIG. 9 is another partial structural schematic diagram of a solar cell provided by an embodiment of the present application.
根据本申请一些实施例,参考图1~图9,太阳能电池包括:基底100,基底100具有第一边缘101以及第二边缘102,第一边缘101为基底100沿第一方向X的边缘,第二边缘102为基底100沿第二方向Y的边缘;钝化层,钝化层位于基底100上;多个副电极120,多个副电极120在基底100上沿第二方向Y间隔排布,副电极120沿第一方向X延伸,副电极120贯穿钝化层与基底100接触;至少一个主电极110,主电极110位于钝化层表面,主电极110包括:两个靠近第二边缘102的连接垫113;连接线114,连接线114靠近第二边缘102的端口闭合,连接线114除端口以外的部分表面与每一连接垫113接触;位于连接垫113与相邻的第二边缘102之间的连接线114的第一截面积大于位于连接垫113之间的连接线114的第二截面积。According to some embodiments of the present application, with reference to Figures 1 to 9, a solar cell includes: a substrate 100. The substrate 100 has a first edge 101 and a second edge 102. The first edge 101 is an edge of the substrate 100 along the first direction X. The two edges 102 are edges of the substrate 100 along the second direction Y; a passivation layer, the passivation layer is located on the substrate 100; a plurality of secondary electrodes 120, the plurality of secondary electrodes 120 are arranged at intervals along the second direction Y on the substrate 100, The secondary electrode 120 extends along the first direction Connection pad 113; connection line 114, the port of the connection line 114 close to the second edge 102 is closed, and part of the surface of the connection line 114 except the port is in contact with each connection pad 113; located between the connection pad 113 and the adjacent second edge 102 The first cross-sectional area of the connecting lines 114 between the connecting pads 113 is greater than the second cross-sectional area of the connecting lines 114 between the connecting pads 113 .
在一些实施例中,太阳能电池可以为单晶硅太阳能电池、多晶硅太阳能电池、非晶硅太阳能电池或者多元化合物太阳能电池,多元化合物太阳能电池具体可以为硫化镉太阳能电池、砷化镓太阳能电池、铜铟硒太阳能电池或者钙钛矿太阳能电池。太阳能电池还可以为PERC电池(Passivated Emitter and Rear Cell,钝化发射极和背面电池)、PERT电池(Passivated Emitter and Rear Totally-diffused cell,钝化发射极背表面全扩散电池)、TOPCon电池(Tunnel Oxide Passivated Contact,隧穿氧化层钝化接触电池)、HIT/HJT电池(Heterojunction Technology,异质结电池)的任意一种。以图2所示太阳能电池的结构作为示例。In some embodiments, the solar cell may be a monocrystalline silicon solar cell, a polycrystalline silicon solar cell, an amorphous silicon solar cell or a multicomponent compound solar cell. Specifically, the multicomponent compound solar cell may be a cadmium sulfide solar cell, a gallium arsenide solar cell, a copper solar cell, or a cadmium sulfide solar cell. Indium selenide solar cells or perovskite solar cells. Solar cells can also be PERC cells (Passivated Emitter and Rear Cell, passivated emitter and rear cell), PERT cells (Passivated Emitter and Rear Totally-diffused cell, passivated emitter back surface fully-diffused cell), TOPCon cells (Tunnel Any one of Oxide Passivated Contact (tunnel oxide layer passivated contact battery) and HIT/HJT battery (Heterojunction Technology, heterojunction battery). Take the structure of the solar cell shown in Figure 2 as an example.
基底100为吸收入射光子而产生光生载流子的区域。在一些实施例中,基底100为硅基底100,可以包括单晶硅、多晶硅、非晶硅或微晶硅中的一种或多种。在另一些实施例中,基底100的材料还可以为碳化硅、有机材料或多元化合物。多元化合物可以包括但不限于钙钛矿、砷化镓、碲化镉、铜铟硒等材料。示例性地,本申请实施例中基底100为单晶硅基底。The substrate 100 is a region that absorbs incident photons to generate photogenerated carriers. In some embodiments, the substrate 100 is a silicon substrate 100, which may include one or more of monocrystalline silicon, polycrystalline silicon, amorphous silicon, or microcrystalline silicon. In other embodiments, the material of the substrate 100 may also be silicon carbide, organic materials or multi-component compounds. Multi-component compounds may include, but are not limited to, perovskite, gallium arsenide, cadmium telluride, copper indium selenide and other materials. Illustratively, the substrate 100 in the embodiment of the present application is a single crystal silicon substrate.
在一些实施例中,基底100的正面为吸收入射光的受光面,基底100的背面为背光面。基底100内具有掺杂元素,掺杂元素类型为N型或者P型,N型元素可以为磷(P)元素、铋(Bi)元素、锑(Sb)元素或砷(As)元素等Ⅴ族元素,P型元素可以为硼(B)元素、铝(Al)元素、镓(Ga)元素或铟(In)元素等Ⅲ族元素。例如,当基底100为P型基底100时,其内部掺杂元素类型为P型。又例如,当基底100为N型基底时,其内部掺杂元素类型为N型。In some embodiments, the front side of the substrate 100 is a light-receiving surface that absorbs incident light, and the back side of the substrate 100 is a backlight surface. There are doping elements in the substrate 100. The type of doping elements is N-type or P-type. The N-type elements can be group V elements such as phosphorus (P) element, bismuth (Bi) element, antimony (Sb) element or arsenic (As) element. Elements, P-type elements can be Group III elements such as boron (B) element, aluminum (Al) element, gallium (Ga) element or indium (In) element. For example, when the substrate 100 is a P-type substrate 100, its internal doping element type is P-type. For another example, when the substrate 100 is an N-type substrate, the internal doping element type is N-type.
在一些实施例中,基底100包括相对的第一表面104与第二表面105。基底100的第一表面104内具有发射极106,发射极106具有与基底100不同的掺杂元素类型。且发射极106表面可以具有绒面结构,以使基底100第一表面104对入射光线的反射率较小,从而对光线的吸收利用率较大。In some embodiments, substrate 100 includes opposing first and second surfaces 104 , 105 . The first surface 104 of the substrate 100 has an emitter 106 therein, and the emitter 106 has a different doping element type than the substrate 100 . And the surface of the emitter 106 may have a textured structure, so that the first surface 104 of the substrate 100 has a smaller reflectivity of incident light, thereby increasing the absorption and utilization of light.
此外,第一方向X与第二方向Y可以互相垂直,也可以存在小于90度的夹角,例如,60度、45度、30度等,第一方向X与第二方向Y不为同一方向即可。本实施例为了便于说明和理解,以第一方向X与第二方向Y互相垂直为例进行说明,在具体的应用中,可以根据实际需要和应用场景,对第一方向X和第二方向Y之间的夹角设置进行调整,本实施例对此不做限制。In addition, the first direction X and the second direction Y may be perpendicular to each other, or there may be an included angle less than 90 degrees, for example, 60 degrees, 45 degrees, 30 degrees, etc. The first direction X and the second direction Y are not the same direction. That’s it. In order to facilitate explanation and understanding, in this embodiment, the first direction X and the second direction Y are perpendicular to each other as an example. In a specific application, the first direction The angle setting between them is adjusted, which is not limited in this embodiment.
在一些实施例中,第一边缘101与第二边缘102的交界处具有倒角103,沿第二方向Y,连接垫113位于倒角103沿第二方向Y以外的边缘区域,如此,连接垫113并未位于倒角103正对的区域,可以避免焊接或者层压时倒角103处的隐裂和微裂;连接垫113靠近倒角103,则倒角103处收集的电流可以以最短的传输路径被焊带收集,减少路径损耗,提升太阳能电池的电池效率。具体地,参考图1,连接垫113靠近第二边缘102的一侧与倒角103朝向连接垫的一侧之间的距离较小或者邻接,如此可以认为连接垫113位于倒角103沿第二方向Y以外的边缘区域。其中,距离较小可以指的是距离小于相邻副电极120之间的栅间距。In some embodiments, the intersection of the first edge 101 and the second edge 102 has a chamfer 103 along the second direction Y, and the connection pad 113 is located in an edge area outside the chamfer 103 along the second direction Y. In this way, the connection pad 113 is not located in the area directly facing the chamfer 103, which can avoid cracks and micro-cracks at the chamfer 103 during welding or lamination; the connection pad 113 is close to the chamfer 103, so the current collected at the chamfer 103 can be collected in the shortest time. The transmission path is collected by the welding ribbon, reducing path loss and improving the cell efficiency of the solar cell. Specifically, referring to FIG. 1 , the distance between the side of the connection pad 113 close to the second edge 102 and the side of the chamfer 103 facing the connection pad is smaller or adjacent. In this way, the connection pad 113 can be considered to be located along the second edge of the chamfer 103 . The edge area outside direction Y. The smaller distance may mean that the distance is smaller than the gate pitch between adjacent secondary electrodes 120 .
在一些实施例中,沿第二方向Y,连接垫113的端部与倒角103沿第二方向Y的边缘之间的长度小于或等于相邻副电极120之间的栅间距,进一步说明了倒角103处收集的电流可以以最短的传输路径被焊带收集,减少路径损耗,提升太阳能电池的电池效率。In some embodiments, along the second direction Y, the length between the end of the connection pad 113 and the edge of the chamfer 103 along the second direction Y is less than or equal to the gate pitch between adjacent secondary electrodes 120. It is further explained that The current collected at the chamfer 103 can be collected by the welding ribbon through the shortest transmission path, reducing path loss and improving the cell efficiency of the solar cell.
在一些实施例中,钝化层可以为单层结构或叠层结构,钝化层的材料可以为氧化硅、氮化硅、氮氧化硅、碳氮氧化硅、氧化钛、氧化铪或氧化铝等材料中的一种或多种。钝化层可以包括第一钝化层111以及第二钝化层112,第一钝化层111位于发射极106远离基底100的表面,第一钝化层111可以视为前钝化层,第二钝化层112位于基底100的第二表面105,第二钝化层112可以视为后钝化层。In some embodiments, the passivation layer can be a single-layer structure or a stacked layer structure, and the material of the passivation layer can be silicon oxide, silicon nitride, silicon oxynitride, silicon oxynitride, titanium oxide, hafnium oxide, or aluminum oxide. one or more of the materials. The passivation layer may include a first passivation layer 111 and a second passivation layer 112. The first passivation layer 111 is located on the surface of the emitter 106 away from the substrate 100. The first passivation layer 111 may be regarded as a front passivation layer. The second passivation layer 112 is located on the second surface 105 of the substrate 100, and the second passivation layer 112 can be regarded as a rear passivation layer.
在一些实施例中,副电极120为太阳能电池的栅线,用于收集并汇总太阳能电池的电流。副电极120可以由烧穿型浆料烧结而成。副电极120的材料可以为铝、银、金、镍、钼或铜的一种或多种。在一些情况下,副电极120是指细栅线或指状栅线,以区别于主栅线或者汇流条。副电极120包括:第一电极121,第一电极121贯穿第一钝化层111与发射极106接触,第一电极121视为上电极或正面电极;第二电极122,第二电极122贯穿第二钝化层112与基底100的第二表面105接触,第二电极122视为下电极或背面电极。In some embodiments, the secondary electrode 120 is a grid line of the solar cell, used to collect and aggregate the current of the solar cell. The secondary electrode 120 may be sintered by a burn-through slurry. The material of the secondary electrode 120 may be one or more of aluminum, silver, gold, nickel, molybdenum or copper. In some cases, the secondary electrode 120 refers to a thin gate line or a finger-shaped gate line to be distinguished from a main gate line or a bus bar. The secondary electrode 120 includes: a first electrode 121 that penetrates the first passivation layer 111 and contacts the emitter 106. The first electrode 121 is regarded as an upper electrode or a front electrode; a second electrode 122 that penetrates the first passivation layer 111 and contacts the emitter 106. The second passivation layer 112 is in contact with the second surface 105 of the substrate 100, and the second electrode 122 is regarded as a lower electrode or a back electrode.
在一些实施例中,主电极110视为太阳能电池的主栅,这里的主栅并不是传统意义上的主栅,而是通过连接线114与每一副电极120之间构成连接的桥梁,通过连接垫113连接焊带,用于收集电流,如此,连接线114的宽度可以设置的较细,减少有效遮光面积,同时减少电阻损耗,提升组件的总功率;主电极110可以设置的较为密集,缩短电流经过细栅的路径,从而提升太阳能电池的光电转换效率;较细的连接线114以及连接垫113同样可以避免硅片隐裂以及微裂处的风险,从而在具有隐裂以及微裂风险的太阳能电池的边缘处设置主电极110,提升边缘处的电流收集能力,使电流收集或者传导的路径更为优化。In some embodiments, the main electrode 110 is regarded as the main grid of the solar cell. The main grid here is not a main grid in the traditional sense, but a bridge connecting each secondary electrode 120 through the connecting wire 114. The connection pad 113 is connected to the welding strip and is used to collect current. In this way, the width of the connection line 114 can be set thinner, reducing the effective shading area, reducing resistance loss, and increasing the total power of the component; the main electrodes 110 can be set densely. Shorten the path of the current through the fine grid, thereby improving the photoelectric conversion efficiency of the solar cell; the thinner connection wires 114 and the connection pads 113 can also avoid the risk of cracks and micro-cracks in the silicon wafer, thereby reducing the risk of cracks and micro-cracks in the silicon wafer. The main electrode 110 is provided at the edge of the solar cell to improve the current collection capability at the edge and optimize the current collection or conduction path.
在一些实施例中,每一连接线114与各副电极120电连接,用于收集各副栅的电流。连接线114的宽度设置较细,连接线114的宽度范围为20-μm~200-μm,优选地,连接线114的宽度范围为20μm~150μm,具体可以为28μm、58μm、98μm、135μm或者150μm。如此,连接线114的宽度范围可以减少遮挡面积,降低接触栅线的阴影损失,且提升电流收集能力。In some embodiments, each connection line 114 is electrically connected to each secondary electrode 120 for collecting current of each secondary gate. The width of the connection line 114 is set to be thin, and the width range of the connection line 114 is 20-μm~200-μm. Preferably, the width range of the connection line 114 is 20-150 μm, specifically it can be 28 μm, 58 μm, 98 μm, 135 μm or 150 μm. . In this way, the width range of the connection line 114 can reduce the shielding area, reduce the shadow loss of the contact grid line, and improve the current collection capability.
在一些实施例中,连接线114靠近第二边缘102的端口闭合,与常见的鱼叉连接线并不同,也就是说,连接线114仅有一根与各连接垫113连接的连接线,鱼叉连接线虽然可以增加主电极与副电极之间的接触点以及传输路径,但常规的较细的连接线可能导致主电极的电阻损伤较大,影响电池效率;仅设置一根连接线与至少两根连接线组成的鱼叉连接线相比,减少了浆料成本,且有利于后续焊带的对准。其中,靠近第二边缘102的端口并未与连接垫113接触,连接垫113与连接线114端口以外的区域接触。如此,当基底100边角处具有倒角103时,连接垫113位于非倒角103正对的区域,连接线114可以位于倒角103正对的区域,从而收集倒角103处的电流,减少倒角103区域的载流子输运路径以降低输运损失,也可以避免由于倒角103处设置连接垫113造成破损的风险。In some embodiments, the port of the connecting line 114 close to the second edge 102 is closed, which is different from the common harpoon connecting line. That is to say, the connecting line 114 has only one connecting line connected to each connecting pad 113. The harpoon Although the connecting wire can increase the contact points and transmission paths between the main electrode and the secondary electrode, conventional thin connecting wires may cause greater resistance damage to the main electrode and affect battery efficiency; only one connecting wire is provided with at least two Compared with the harpoon connection line composed of three connecting wires, it reduces the cost of slurry and facilitates the alignment of subsequent soldering strips. Among them, the port close to the second edge 102 is not in contact with the connection pad 113, and the connection pad 113 is in contact with the area other than the port of the connection line 114. In this way, when there is a chamfer 103 at the corner of the substrate 100, the connection pad 113 is located in the area directly opposite the chamfer 103, and the connecting wire 114 can be located in the area directly opposite the chamfer 103, thereby collecting the current at the chamfer 103 and reducing The carrier transport path in the chamfer 103 area is reduced to reduce transport losses, and the risk of damage caused by the connection pad 113 being provided at the chamfer 103 can also be avoided.
截面积指的是宽度与高度的乘积,然而为避免后续与焊带连接或者层压过程中,可能存在电池片各处的受力不同导致电池片具有隐裂或者微裂的风险,通常设置连接线114的各处高度相同,如此第一截面积大于第二截面积可以视为位于连接垫113与第二边缘102之间的连接线114的第一宽度大于位于连接垫113之间的连接线114的第二宽度。The cross-sectional area refers to the product of width and height. However, in order to avoid the risk of cracks or micro-cracks in the cells caused by different forces in the subsequent connection with the soldering strip or lamination process, connections are usually set The height of the line 114 is the same everywhere, so that the first cross-sectional area is greater than the second cross-sectional area, it can be regarded that the first width of the connection line 114 between the connection pads 113 and the second edge 102 is greater than the connection line between the connection pads 113 Second width of 114.
在另一些实施例中,为避免靠近边缘的连接线114具有隐裂的风险,有可能设置位于连接垫113与第二边缘102之间的连接线114(即第一子连接线116)的高度略小于位于连接垫113之间的连接线114(即第二子连接线117以及第三子连接线118)的高度。同样,可以推出位于连接垫113与第二边缘102之间的连接线114的第一宽度大于位于连接垫113之间的连接线114的第二宽度。第一子连接线116的宽度较大,可以缓解连接垫113的焊接应力,以使焊带与主电极110之间形成良好的接触;此外,较宽的第一子连接线116可以缓解连接垫113的收集压力,提升载流子的传输能力,较宽的第一子连接线116具有较多的传输面积用于收集电流。In other embodiments, in order to avoid the risk of cracks in the connection lines 114 close to the edge, it is possible to set the height of the connection lines 114 between the connection pads 113 and the second edge 102 (ie, the first sub-connection lines 116 ). Slightly less than the height of the connection lines 114 (ie, the second sub-connection line 117 and the third sub-connection line 118 ) located between the connection pads 113 . Likewise, it can be deduced that the first width of the connection line 114 between the connection pads 113 and the second edge 102 is greater than the second width of the connection line 114 between the connection pads 113 . The width of the first sub-connection line 116 is larger, which can relieve the soldering stress of the connection pad 113, so that good contact is formed between the solder strip and the main electrode 110; in addition, the wider first sub-connection line 116 can relieve the stress on the connection pad. The collection pressure of 113 improves the carrier transmission capability, and the wider first sub-connection line 116 has more transmission area for collecting current.
在一些实施例中,第一截面积与第二截面积的差值与连接垫113与相邻的第二边缘102的间距S大小成正比。当连接垫113与相邻的第二边缘102的间距S较大时,第一截面积也较大,即第一宽度也较大,使收集电流的传输面积也较大,从而缓解收集压力同时提升电池性能。第一截面积与第二截面积的差值范围可以视为第一宽度与第二宽度的差值范围,第一宽度与第二宽度的差值范围小于100μm,进一步,第一宽度与第二宽度的差值范围小于80μm。第一宽度与第二宽度的差值具体可以为15μm、39μm、68μm或者80μm。如此,第一宽度与第二宽度的差值可以满足第一子连接线116的宽度较大,收集第二边缘的载流子能力越好,且遮挡面积适当,降低光学损失;第二子连接线117与第三子连接线118的横截面积适当,导电能力较好且电阻损失较小。In some embodiments, the difference between the first cross-sectional area and the second cross-sectional area is proportional to the distance S between the connection pad 113 and the adjacent second edge 102 . When the distance S between the connection pad 113 and the adjacent second edge 102 is larger, the first cross-sectional area is also larger, that is, the first width is also larger, so that the transmission area of the collection current is also larger, thereby alleviating the collection pressure and at the same time Improve battery performance. The difference range between the first cross-sectional area and the second cross-sectional area can be regarded as the difference range between the first width and the second width. The difference range between the first width and the second width is less than 100 μm. Furthermore, the difference range between the first width and the second width The difference in width range is less than 80μm. The difference between the first width and the second width may specifically be 15 μm, 39 μm, 68 μm or 80 μm. In this way, the difference between the first width and the second width can satisfy the requirement that the larger the width of the first sub-connection line 116, the better the ability to collect carriers at the second edge, and the appropriate shielding area, thereby reducing optical loss; the second sub-connection The cross-sectional area of the line 117 and the third sub-connection line 118 is appropriate, the conductivity is good, and the resistance loss is small.
在一些实施例中,第一宽度的范围为20μm ~200μm,优选地,第一宽度的范围为20μm~150μm,具体可以为28μm、58μm、98μm、135μm或者150μm。如此,第一子连接线116的宽度范围可以减少遮挡面积,降低接触栅线的阴影损失,且提升电流收集能力。In some embodiments, the first width ranges from 20 μm to 200 μm. Preferably, the first width ranges from 20 μm to 150 μm, and specifically may be 28 μm, 58 μm, 98 μm, 135 μm or 150 μm. In this way, the width range of the first sub-connection line 116 can reduce the shielding area, reduce the shadow loss of the contact grid line, and improve the current collection capability.
在一些实施例中,第二宽度的范围为20μm ~100μm,优选地,第二宽度的范围为20μm~80μm,具体可以为28μm、39μm、52μm、71μm或者80μm。如此,第二子连接线117与第三子连接线118的横截面积适当,导电能力较好且电阻损失较小。In some embodiments, the second width ranges from 20 μm to 100 μm. Preferably, the second width ranges from 20 μm to 80 μm, and specifically may be 28 μm, 39 μm, 52 μm, 71 μm or 80 μm. In this way, the cross-sectional area of the second sub-connection line 117 and the third sub-connection line 118 is appropriate, the conductivity is good, and the resistance loss is small.
在一些实施例中,连接垫113与相邻的第二边缘102的间距S范围为3mm~15mm,优选地,间距S范围为3mm~13mm,间距S具体可以为3mm、5.8mm、9.4mm或者13mm。连接垫与第二边缘102的距离适中,可以收集第二边缘102的载流子,且可以避免焊接焊带时造成的隐裂以及破损等风险。In some embodiments, the distance S between the connection pad 113 and the adjacent second edge 102 ranges from 3mm to 15mm. Preferably, the distance S ranges from 3mm to 13mm. The distance S can specifically be 3mm, 5.8mm, 9.4mm or 13mm. The distance between the connection pad and the second edge 102 is moderate, which can collect carriers on the second edge 102 and avoid risks such as cracks and damage caused by welding the ribbon.
在一些实施例中,连接垫113可以视为主电极110与焊带接触的接触点,连接垫113可以与副电极120接触,也可以并未与副电极120接触,而是通过连接线114与副电极120电连接。In some embodiments, the connection pad 113 can be regarded as a contact point between the main electrode 110 and the solder ribbon. The connection pad 113 can be in contact with the secondary electrode 120 , or it may not be in contact with the secondary electrode 120 , but with the connection wire 114 through the connection wire 114 . The secondary electrode 120 is electrically connected.
在一些实施例中,还包括:至少一个第二连接垫115,第二连接垫115位于连接垫113之间;连接线114与每一第二连接垫115接触;对同一主电极110,位于两个相邻的第二连接垫115之间的连接线114(即第三子连接线118)的第三截面积最小;或者连接线114包括位于第二边缘与连接垫113的第一子连接线116、位于第二连接垫与连接垫之间的第二子连接线117以及位于相邻的第二连接垫之间的第三子连接线118,第三子连接线118的第三截面积最小。在一个具体的例子中,第二子连接线117的第四截面积等于第三截面积。中间区域的连接线114(第二子连接线117以及第三子连接线118)的宽度较细,可以减小栅线遮挡面积。在另一个具体的例子中,第二子连接线117的第四截面积大于第三截面积,如此,第一截面积最大,第四截面积次之,第三截面积最小,保证基底100中间区域的遮挡面积较小,边缘区域的宽度较大,连接线114与副电极120的接触较好,从而具有较好的收集电流的能力。In some embodiments, it also includes: at least one second connection pad 115, the second connection pad 115 is located between the connection pads 113; the connection line 114 is in contact with each second connection pad 115; for the same main electrode 110, The third cross-sectional area of the connection line 114 (ie, the third sub-connection line 118) between two adjacent second connection pads 115 is the smallest; or the connection line 114 includes a first sub-connection line located between the second edge and the connection pad 113 116. The second sub-connection line 117 located between the second connection pad and the third sub-connection line 118 located between the adjacent second connection pads. The third sub-connection line 118 has the smallest third cross-sectional area. . In a specific example, the fourth cross-sectional area of the second sub-connection line 117 is equal to the third cross-sectional area. The width of the connection line 114 (the second sub-connection line 117 and the third sub-connection line 118) in the middle area is thin, which can reduce the gate line shielding area. In another specific example, the fourth cross-sectional area of the second sub-connection line 117 is larger than the third cross-sectional area. In this way, the first cross-sectional area is the largest, the fourth cross-sectional area is the second, and the third cross-sectional area is the smallest, ensuring that the middle of the base 100 The shielding area of the region is smaller, the width of the edge region is larger, and the connection line 114 has better contact with the secondary electrode 120, thereby having a better ability to collect current.
在一些实施例中,连接垫113的面积大于第二连接垫115的面积。位于边缘的连接垫113的面积较大时,可以作为焊带对位时的基准,避免焊带与主电极110之间焊接偏移;连接垫113的面积较大也可以缓解焊带的焊接压力,同时提升边缘收集电流的能力。In some embodiments, the area of the connection pad 113 is larger than the area of the second connection pad 115 . When the area of the connection pad 113 located at the edge is large, it can be used as a reference for aligning the soldering strip to avoid welding offset between the soldering strip and the main electrode 110; a large area of the connecting pad 113 can also relieve the welding pressure of the soldering strip. , while improving the ability of the edge to collect current.
在一些实施例中,本申请提供的主电极为多个子连接线组成的一根连接线,且第一子连接线116的宽度大于第二子连接线117与第三子连接线118的宽度,与仅有一根宽度递减或者递增的连接线相比,本申请提供的连接线的设计方式更利于焊带对准,且降低了制备工艺的难度,同时减少了基底非边缘区域的遮挡面积,从而具有更高的光电转换效率。In some embodiments, the main electrode provided in this application is a connection line composed of multiple sub-connection lines, and the width of the first sub-connection line 116 is greater than the width of the second sub-connection line 117 and the third sub-connection line 118, Compared with only one connection line with decreasing or increasing width, the design method of the connecting line provided by this application is more conducive to the alignment of the soldering strips, reduces the difficulty of the preparation process, and reduces the shielding area of the non-edge area of the substrate, thus Has higher photoelectric conversion efficiency.
在一些实施例中,参考图3,主电极包括:两个第一主电极130,第一主电极130靠近第一边缘101;至少一条第二主电极140,第二主电极140位于相邻的第一主电极130之间,第二主电极140位于钝化层表面。In some embodiments, referring to Figure 3, the main electrodes include: two first main electrodes 130, the first main electrodes 130 are close to the first edge 101; at least one second main electrode 140, the second main electrode 140 is located adjacent to Between the first main electrodes 130, the second main electrode 140 is located on the surface of the passivation layer.
在一些实施例中,第一主电极130包括:两个靠近第二边缘102的第一子连接垫131;第一连接线132,且第一连接线132靠近第二边缘102的端口闭合,第一连接线132除端口以外的部分表面与每一第一子连接垫131接触;位于第一子连接垫131与相邻的第二边缘102之间的第一连接线132的第五截面积大于位于第一子连接垫131之间的第一连接线132的第六截面积。In some embodiments, the first main electrode 130 includes: two first sub-connection pads 131 close to the second edge 102; a first connection line 132, and the port of the first connection line 132 close to the second edge 102 is closed. A portion of the surface of a connection line 132 other than the port is in contact with each first sub-connection pad 131; the fifth cross-sectional area of the first connection line 132 located between the first sub-connection pad 131 and the adjacent second edge 102 is greater than The sixth cross-sectional area of the first connection line 132 located between the first sub-connection pads 131 .
在一些实施例中,还包括:至少一个第三子连接垫133,第三子连接垫133位于第一子连接垫131之间;第一连接线132与每一第三子连接垫133接触;对同一第一主电极130,位于两个相邻的第三子连接垫133之间的第一连接线132的第七截面积最小;或者第一连接线包括位于第二边缘与第一子连接垫131的第一连接段134、位于第三子连接垫与第一子连接垫之间的第二连接段136以及位于第三子连接垫之间的第三连接段137,第三连接段的第七截面积最小。在一个具体的例子中,参考图4,第二连接段136的第八截面积等于第七截面积。中间区域的第一连接线132的宽度较细,可以较减小栅线遮挡面积。在另一个具体的例子中,参考图5,第二连接段136的第八截面积大于第七截面积。如此,第五截面积最大,第八截面积次之,第七截面积最小,保证基底100中间区域的遮挡面积较小,边缘区域的宽度较大,第一连接线132与副电极120的接触较好,从而具有较好的收集电流的能力。In some embodiments, it also includes: at least one third sub-connection pad 133, the third sub-connection pad 133 is located between the first sub-connection pads 131; the first connection line 132 is in contact with each third sub-connection pad 133; For the same first main electrode 130, the seventh cross-sectional area of the first connection line 132 located between two adjacent third sub-connection pads 133 is the smallest; or the first connection line includes the first connection line located at the second edge and the first sub-connection The first connection section 134 of the pad 131, the second connection section 136 between the third sub-connection pad and the first sub-connection pad, and the third connection section 137 between the third sub-connection pad, the third connection section The seventh cross-sectional area is the smallest. In a specific example, referring to FIG. 4 , the eighth cross-sectional area of the second connecting section 136 is equal to the seventh cross-sectional area. The width of the first connection line 132 in the middle area is thinner, which can reduce the gate line shielding area. In another specific example, referring to FIG. 5 , the eighth cross-sectional area of the second connecting section 136 is larger than the seventh cross-sectional area. In this way, the fifth cross-sectional area is the largest, the eighth cross-sectional area is the second, and the seventh cross-sectional area is the smallest, ensuring that the shielding area in the middle area of the substrate 100 is small, the width of the edge area is large, and the contact between the first connection line 132 and the secondary electrode 120 is ensured. Better, thus having better ability to collect current.
在一些实施例中,第二主电极140包括:第二连接线142,第二连接线142靠近第二边缘102的端口闭合,第一连接线132的截面积大于等于第二连接线142的截面积,对于非边缘区域的第二主电极140而言,设置宽度较小的第二连接线142,使得第二主电极140的栅线遮挡面积较小;对于边缘区域的第一主电极130而言,设置宽度较大的第一连接线132,增大了第一连接线132与各副电极120之间电接触的横截面积,降低了第一连接线132的电阻,相较于更细的第二连接线142,提高了临近基底100边缘的第一连接线132的电流收集和传输能力,进而提升了太阳能电池整体的边缘电流收集能力和光电转换效率。In some embodiments, the second main electrode 140 includes: a second connection line 142 , a port of the second connection line 142 close to the second edge 102 is closed, and a cross-sectional area of the first connection line 132 is greater than or equal to that of the second connection line 142 . area, for the second main electrode 140 in the non-edge area, a second connection line 142 with a smaller width is set so that the gate line shielding area of the second main electrode 140 is smaller; for the first main electrode 130 in the edge area, In other words, setting the first connection line 132 with a larger width increases the cross-sectional area of electrical contact between the first connection line 132 and each secondary electrode 120, and reduces the resistance of the first connection line 132. Compared with a thinner one, The second connection line 142 improves the current collection and transmission capabilities of the first connection line 132 near the edge of the substrate 100, thereby improving the overall edge current collection capability and photoelectric conversion efficiency of the solar cell.
在一些实施例中,第一主电极130与相邻的第二主电极140之间的第一间距m不等于相邻的第二主电极140之间的第二间距n。在一个具体的例子中,第一间距m大于第二间距n,第一主电极130靠近第一边缘101,将边缘处的主电极设的较为稀疏,在焊接以及层压时,可以避免电池片出现微裂等风险。在另一个具体的例子中,第一间距m小于第二间距n,保证边缘处第一主电极130与第二主电极140较为密集,电流从副电极120到主电极的路径较短,从而减少损耗,且有利于电极的收集边缘处电流的能力。In some embodiments, the first spacing m between the first main electrode 130 and the adjacent second main electrode 140 is not equal to the second spacing n between the adjacent second main electrodes 140 . In a specific example, the first spacing m is greater than the second spacing n, the first main electrode 130 is close to the first edge 101, and the main electrodes at the edge are arranged sparsely, so that the battery sheets can be avoided during welding and lamination. Risks such as micro cracks may occur. In another specific example, the first spacing m is smaller than the second spacing n, ensuring that the first main electrode 130 and the second main electrode 140 are densely packed at the edge, and the path of the current from the secondary electrode 120 to the main electrode is short, thereby reducing losses and contribute to the electrode's ability to collect current at the edges.
在一些实施例中,第一连接线132与第二连接线142的材料相同,即在同一制备工艺下,形成第一连接线132以及第二连接线142。In some embodiments, the first connection line 132 and the second connection line 142 are made of the same material, that is, the first connection line 132 and the second connection line 142 are formed under the same manufacturing process.
在一些实施例中,第二主电极140还包括:第二子连接垫141,第二子连接垫141靠近第二边缘102,第二子连接垫141与第二连接线142接触;沿第二方向Y,第一子连接垫131与第二边缘102的第一距离大于第二子连接垫141与第二边缘102的第二距离。由于基底100的第一边缘101与第二边缘102的交界处具有倒角103,第一子连接垫131的位置远离第二边缘102,设置第二子连接垫141较第一子连接垫131更靠近第二边缘102,可以缩短第二边缘102处的电流的传输路径,提升第二边缘102的电流收集能力。In some embodiments, the second main electrode 140 further includes: a second sub-connection pad 141, the second sub-connection pad 141 is close to the second edge 102, the second sub-connection pad 141 contacts the second connection line 142; along the second In the direction Y, the first distance between the first sub-connection pad 131 and the second edge 102 is greater than the second distance between the second sub-connection pad 141 and the second edge 102 . Since the junction of the first edge 101 and the second edge 102 of the substrate 100 has a chamfer 103 , the first sub-connection pad 131 is located far away from the second edge 102 , and the second sub-connection pad 141 is disposed farther than the first sub-connection pad 131 . Being close to the second edge 102 can shorten the current transmission path at the second edge 102 and improve the current collection capability of the second edge 102 .
在一些实施例中,参考图3和图6,第二连接线142的一端靠近第二边缘102的端口闭合,第二连接线142除端口以外的部分表面与第二子连接垫141接触;位于第二子连接垫141与相邻的第二边缘102之间的第二连接线142(即第四段144)的第九截面积大于位于第二子连接垫之间的第二连接线142(即第五段146)的第十截面积。第九截面积大于第十截面积的技术构思以及所达到的技术效果与第一截面积大于第二截面积的技术构思以及所达到的技术效果相同或相似,在这不过多赘述。In some embodiments, referring to Figures 3 and 6, one end of the second connection line 142 is closed close to the port of the second edge 102, and part of the surface of the second connection line 142 other than the port is in contact with the second sub-connection pad 141; located at The ninth cross-sectional area of the second connection line 142 (ie, the fourth section 144) between the second sub-connection pad 141 and the adjacent second edge 102 is larger than the second connection line 142 between the second sub-connection pads (ie, the fourth section 144). That is, the tenth cross-sectional area of the fifth paragraph 146). The technical concept of the ninth cross-sectional area being larger than the tenth cross-sectional area and the technical effects achieved are the same as or similar to the technical concept of the first cross-sectional area being larger than the second cross-sectional area and the technical effects achieved, and will not be described in detail here.
在一些实施例中,参考图3和图7,沿第一方向X,靠近第一边缘101的副电极120的截面积大于远离第一边缘101的副电极120的截面积,以提升第一边缘101处副电极120的电流收集和传输能力。In some embodiments, referring to FIGS. 3 and 7 , along the first direction The current collection and transmission capabilities of the secondary electrode 120 at 101.
在一些实施例中,主栅的数量可以0,即太阳能电池为无主栅电池,或者太阳能电池为MBB(多主栅)电池。In some embodiments, the number of busbars may be 0, that is, the solar cell is a busbarless cell, or the solar cell is an MBB (multiple busbar) cell.
在一些实施例中,参考图1以及图8,主电极与至少一个连接垫靠近第一边缘101的一侧接触。连接线更靠近第一边缘101,连接线收集第一边缘101处电流的能力增强,且连接垫与第一边缘101之间至少隔着一个连接线的宽度,焊接与层压时可以避免边缘处的应力较差导致的破损问题。副电极120与连接垫远离第一边缘101的一侧接触,如此,副电极收集到的电流可以直接有连接垫收集并汇聚到焊带上,减少电流传输路径。In some embodiments, referring to FIG. 1 and FIG. 8 , the main electrode is in contact with a side of at least one connection pad close to the first edge 101 . The connection line is closer to the first edge 101, and the ability of the connection line to collect current at the first edge 101 is enhanced, and there is at least one connection line width between the connection pad and the first edge 101. The edge can be avoided during welding and lamination. Damage problems caused by poor stress. The secondary electrode 120 is in contact with the side of the connection pad away from the first edge 101. In this way, the current collected by the secondary electrode can be directly collected by the connection pad and converged on the welding strip, thereby reducing the current transmission path.
在一些实施例中,太阳能电池为背接触电池,例如IBC(Interdigitated backcontact,交叉指式背接触)电池,参考图9,背接触电池包括:基底100,位于基底100第一表面104的第三钝化层107;位于基底100第二表面105的第一掺杂区108以及第二掺杂区109;第四钝化层119,第四钝化层119位于第一掺杂区108以及第二掺杂区109的基底100表面;第一电极121,第一电极121贯穿第四钝化层119与第一掺杂区108连接;第二电极122,第二电极122贯穿第四钝化层119与第二掺杂区109连接。在另一些实施例中,背接触电池包括:基底,位于基底第一表面的第三钝化层;位于基底第二表面具有第一掺杂区,第一掺杂区可以具有基底相同的导电类型,也可以与基底具有不同的导电类型;隧穿氧化层以及掺杂多晶硅层,隧穿氧化层以及掺杂多晶硅层位于基底的第二表面;第四钝化层,第四钝化层位于第一掺杂区、掺杂多晶硅层的表面;第一电极,第一电极贯穿第四钝化层与掺杂多晶硅层连接;第二电极,第二电极贯穿第四钝化层与第一掺杂区连接。在又一些实施例中,背接触电池包括:基底,位于基底第一表面的第三钝化层;基底第二表面具有隧穿氧化层以及第一掺杂多晶硅层和第二掺杂多晶硅层;第四钝化层,第四钝化层位于第一掺杂多晶硅层、第二掺杂多晶硅层和基底的表面;第一电极,第一电极贯穿第四钝化层与第一掺杂多晶硅层连接;第二电极,第二电极贯穿第四钝化层与第二掺杂多晶硅层连接。可以理解的是,上述的第一表面为硅基底的正面,第二表面为硅基底的背面,第一掺杂区为N型掺杂区或P型掺杂区的一者,第二掺杂区为N型掺杂区或P型掺杂区的另一者。In some embodiments, the solar cell is a back contact cell, such as an IBC (Interdigitated backcontact, interdigitated back contact) cell. Referring to FIG. 9 , the back contact cell includes: a substrate 100 and a third blunt electrode located on the first surface 104 of the substrate 100 . passivation layer 107; the first doped region 108 and the second doped region 109 located on the second surface 105 of the substrate 100; the fourth passivation layer 119, the fourth passivation layer 119 is located in the first doped region 108 and the second doped region The surface of the substrate 100 of the impurity region 109; the first electrode 121, the first electrode 121 penetrates the fourth passivation layer 119 and is connected to the first doping region 108; the second electrode 122, the second electrode 122 penetrates the fourth passivation layer 119 and is connected to The second doped region 109 is connected. In other embodiments, the back contact battery includes: a substrate, a third passivation layer located on a first surface of the substrate; a first doped region located on the second surface of the substrate, and the first doped region may have the same conductivity type as the substrate , can also have different conductivity types from the substrate; the tunnel oxide layer and the doped polysilicon layer are located on the second surface of the substrate; the fourth passivation layer is located on the second surface of the substrate; A doped region, the surface of the doped polysilicon layer; a first electrode, the first electrode penetrates the fourth passivation layer and is connected to the doped polysilicon layer; a second electrode, the second electrode penetrates the fourth passivation layer and the first doped polysilicon layer area connection. In still other embodiments, a back contact cell includes: a substrate, a third passivation layer located on a first surface of the substrate; a second surface of the substrate having a tunnel oxide layer and a first doped polysilicon layer and a second doped polysilicon layer; The fourth passivation layer is located on the surface of the first doped polysilicon layer, the second doped polysilicon layer and the substrate; the first electrode penetrates the fourth passivation layer and the first doped polysilicon layer. Connection; the second electrode, the second electrode penetrates the fourth passivation layer and is connected to the second doped polysilicon layer. It can be understood that the above-mentioned first surface is the front surface of the silicon substrate, the second surface is the back surface of the silicon substrate, the first doped region is one of the N-type doped region or the P-type doped region, and the second doped region The region is the other one of an N-type doped region or a P-type doped region.
值得说明的是,“背接触电池”指的是正电极以及负电极均与基底100背面的结构进行接触并收集电流,并不涉及基底100的正面。It is worth noting that the “back contact battery” refers to that both the positive electrode and the negative electrode are in contact with the structure on the back side of the substrate 100 and collect current, and does not involve the front side of the substrate 100 .
在一些实施例中,背接触电池包括:基底100,基底100具有第一边缘101以及第二边缘102,第一边缘101为基底100沿第一方向X的边缘,第二边缘102为基底100沿第二方向Y的边缘;钝化层,钝化层位于基底100上;多个副电极120,多个副电极120在基底100上沿第二方向Y间隔排布,副电极120沿第一方向X延伸,副电极120贯穿钝化层与基底100接触;至少一个主电极110,主电极110位于钝化层表面,主电极110包括:两个靠近第二边缘102的连接垫113;连接线114,连接线114靠近第二边缘102的端口闭合,连接线114除端口以外的部分表面与每一连接垫113接触;位于连接垫113与相邻的第二边缘102之间的连接线114的第一截面积大于位于连接垫113之间的连接线114的第二截面积。In some embodiments, the back contact cell includes: a substrate 100 having a first edge 101 and a second edge 102. The first edge 101 is an edge of the substrate 100 along the first direction X, and the second edge 102 is an edge of the substrate 100 along the first direction X. The edge in the second direction Y; a passivation layer, the passivation layer is located on the substrate 100; a plurality of secondary electrodes 120, the plurality of secondary electrodes 120 are arranged at intervals along the second direction Y on the substrate 100, and the secondary electrodes 120 are arranged along the first direction Extended by , the port of the connecting line 114 close to the second edge 102 is closed, and part of the surface of the connecting line 114 other than the port is in contact with each connecting pad 113; A cross-sectional area is larger than a second cross-sectional area of the connection lines 114 located between the connection pads 113 .
在一些实施例中,第一截面积与第二截面积的差值与连接垫与相邻的第二边缘的间距大小成正比。位于连接垫与第二边缘之间的连接线的第一宽度大于位于连接垫之间的连接线的第二宽度。In some embodiments, the difference between the first cross-sectional area and the second cross-sectional area is proportional to the distance between the connecting pad and the adjacent second edge. The first width of the connection line between the connection pads and the second edge is greater than the second width of the connection line between the connection pads.
在一些实施例中,副电极包括:沿第一方向间隔排布的第一电极121与第二电极122,第一电极121为正电极与负电极的一者,第二电极122为正电极与负电极的一者。本申请实施例以第一电极121为正电极,第二电极122为负电极作为示例。副电极120包括沿第二方向Y间隔排布的第一电极121以及第二电极122。In some embodiments, the secondary electrode includes: a first electrode 121 and a second electrode 122 spaced apart along the first direction. The first electrode 121 is one of a positive electrode and a negative electrode, and the second electrode 122 is one of a positive electrode and a negative electrode. One of the negative electrodes. In the embodiment of the present application, the first electrode 121 is a positive electrode and the second electrode 122 is a negative electrode as an example. The secondary electrode 120 includes first electrodes 121 and second electrodes 122 spaced apart along the second direction Y.
在一些实施例中,主电极包括:间隔排布的第一栅线结构151以及第二栅线结构152,第一栅线结构151与各第一电极121电连接,第二栅线结构152与各第二电极122电连接。具体地,第一主电极包括第一边缘栅线以及第二边缘栅线,第一边缘栅线与各第一电极121电连接,第二边缘栅线与各第二电极122电连接。第二主电极包括第一栅线以及第二栅线。In some embodiments, the main electrode includes: a first gate line structure 151 and a second gate line structure 152 arranged at intervals. The first gate line structure 151 is electrically connected to each first electrode 121 , and the second gate line structure 152 is electrically connected to each first electrode 121 . Each second electrode 122 is electrically connected. Specifically, the first main electrode includes a first edge gate line and a second edge gate line. The first edge gate line is electrically connected to each first electrode 121 , and the second edge gate line is electrically connected to each second electrode 122 . The second main electrode includes a first gate line and a second gate line.
在一些实施例中,第一栅线结构151与第二栅线结构152沿第一方向X错位排布,以使沿第二方向Y,靠近第二边缘的第一栅线结构151与第二栅线结构152与第二边缘的距离不同,降低太阳电池金属化导电银浆的消耗以及缩短了细栅方向电流收集的距离,降低了碎片率。此外,至少一部分的主栅可以不外露至副电极靠近第二边缘的一端,既美观且保证了电池片正负电极的适应性长度,且可以避免不同极性的电极之间存在短路的风险。In some embodiments, the first gate line structure 151 and the second gate line structure 152 are arranged in a staggered manner along the first direction The distance between the grid structure 152 and the second edge is different, which reduces the consumption of metallized conductive silver paste of the solar cell and shortens the distance for current collection in the fine grid direction, reducing the fragmentation rate. In addition, at least a part of the main grid may not be exposed to the end of the secondary electrode close to the second edge, which is not only beautiful but also ensures the adaptive length of the positive and negative electrodes of the battery sheet, and avoids the risk of short circuit between electrodes of different polarities.
本申请实施例提供的太阳能电池中,主电极110包含连接垫113以及连接线114,可以通过设置连接线114的宽度较细降低有效遮光面积,同时减少电阻损失,从而提高组件总功率。此外,由于组成主栅的连接线114分布更密集,主栅和细栅之间的接触点可以更多,在硅片隐裂和微裂部位电流传导的路径更加优化,因此由于微裂造成的损失被大大减小,有利于提高产线的产量。连接垫113与相邻的第二边缘102之间的连接线114的第一截面积大于位于连接垫113之间的连接线114的第二截面积,位于第二边缘102以及连接垫113的连接线114的宽度较大,可以缓解连接垫113的焊接应力,以使焊带与主电极110之间形成良好的接触;此外,较宽的连接线114可以缓解连接垫113的收集压力,提升载流子的传输能力,较宽的连接线具有较多的传输面积用于收集电流。In the solar cell provided by the embodiment of the present application, the main electrode 110 includes a connecting pad 113 and a connecting wire 114. By setting the width of the connecting wire 114 to be thinner, the effective shading area can be reduced, while resistance loss can be reduced, thereby increasing the total power of the module. In addition, since the connection lines 114 that make up the main gate are more densely distributed, there can be more contact points between the main gate and the fine gate, and the path of current conduction in the silicon wafer's hidden cracks and micro-cracks is more optimized, so the problems caused by micro-cracks The loss is greatly reduced, which is beneficial to increasing the output of the production line. The first cross-sectional area of the connecting line 114 between the connecting pad 113 and the adjacent second edge 102 is greater than the second cross-sectional area of the connecting line 114 between the connecting pads 113 , and the connection between the second edge 102 and the connecting pad 113 The wider width of the line 114 can relieve the welding stress of the connection pad 113, so that a good contact is formed between the solder ribbon and the main electrode 110; in addition, the wider connection line 114 can relieve the collection pressure of the connection pad 113 and increase the load. The transmission capacity of currents, wider connection lines have more transmission area for collecting current.
图10为本申请一实施例提供的光伏组件的一种结构示意图。Figure 10 is a schematic structural diagram of a photovoltaic module provided by an embodiment of the present application.
相应地,本申请实施例还提供一种光伏组件,参考图10,光伏组件包括电池串,电池串由多个上述实施例提供的太阳能电池20连接而成;封装层21,封装层21用于覆盖电池串的表面;盖板22,盖板22用于覆盖封装层21远离电池串的表面。太阳能电池20以整片或者多分片的形式电连接形成多个电池串,多个电池串以串联和/或并联的方式进行电连接。Correspondingly, embodiments of the present application also provide a photovoltaic module. Referring to Figure 10, the photovoltaic module includes a battery string. The battery string is connected by a plurality of solar cells 20 provided in the above embodiments; an encapsulation layer 21 is used. Cover the surface of the battery string; the cover plate 22 is used to cover the surface of the packaging layer 21 away from the battery string. The solar cells 20 are electrically connected in the form of a whole piece or multiple slices to form multiple battery strings, and the multiple battery strings are electrically connected in series and/or in parallel.
具体地,在一些实施例中,多个电池串之间可以通过导电带电连接。封装层21包括第一封装层211以及第二封装层212,第一封装层211覆盖太阳能电池20的正面或者背面的其中一者,第二封装层覆盖太阳能电池20的正面或者背面的另一者,具体地,第一封装层211或第二封装层212的至少一者可以为乙烯-乙酸乙烯共聚物(EVA)胶膜、聚乙烯辛烯共弹性体(POE)胶膜或者聚对苯二甲酸乙二醇酯(PET)胶膜等有机封装胶膜。在一些实施例中,盖板22可以为玻璃盖板、塑料盖板等具有透光功能的盖板。具体地,盖板22朝向封装层21的表面可以为凹凸表面,从而增加入射光线的利用率。盖板22包括第一盖板221以及第二盖板222,第一盖板221与第一封装层211相对,第二盖板222与第二封装层212相对。Specifically, in some embodiments, multiple battery strings may be electrically connected through conductive charges. The encapsulation layer 21 includes a first encapsulation layer 211 and a second encapsulation layer 212. The first encapsulation layer 211 covers one of the front or the back of the solar cell 20, and the second encapsulation layer covers the other of the front or the back of the solar cell 20. , specifically, at least one of the first encapsulation layer 211 or the second encapsulation layer 212 may be an ethylene-vinyl acetate copolymer (EVA) adhesive film, a polyethylene octene co-elastomer (POE) adhesive film, or a polyterephthalene Ethylene glycol formate (PET) film and other organic encapsulating films. In some embodiments, the cover 22 may be a glass cover, a plastic cover, or other cover with a light-transmitting function. Specifically, the surface of the cover plate 22 facing the encapsulation layer 21 may be a concave and convex surface, thereby increasing the utilization of incident light. The cover 22 includes a first cover 221 and a second cover 222 . The first cover 221 is opposite to the first encapsulation layer 211 , and the second cover 222 is opposite to the second encapsulation layer 212 .
本申请虽然以较佳实施例公开如上,但并不是用来限定权利要求,任何本领域技术人员在不脱离本申请构思的前提下,都可以做出若干可能的变动和修改,因此本申请的保护范围应当以本申请权利要求所界定的范围为准。此外,本申请说明书的实施例以及所示出的附图仅为示例说明,并非本申请权利要求所保护的全部范围。Although this application discloses preferred embodiments as above, it is not used to limit the claims. Any person skilled in the art can make several possible changes and modifications without departing from the concept of this application. Therefore, this application The scope of protection shall be subject to the scope defined by the claims of this application. In addition, the embodiments in the description of this application and the drawings shown are only examples, and do not cover the entire scope protected by the claims of this application.
本领域的普通技术人员可以理解,上述各实施方式是实现本申请的具体实施例,而在实际应用中,可以在形式上和细节上对其作各种改变,而不偏离本申请的精神和范围。任何本领域技术人员,在不脱离本申请的精神和范围内,均可作各种改动与修改,因此本申请的保护范围应当以权利要求限定的范围为准。Those of ordinary skill in the art can understand that the above-mentioned embodiments are specific examples for implementing the present application, and in actual applications, various changes can be made in form and details without departing from the spirit and spirit of the present application. scope. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application shall be subject to the scope defined by the claims.
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