CN115360295B - Three-dimensional magnetic sensor based on cuboid silicon-based through hole and manufacturing method thereof - Google Patents

Abstract

The present application relates to the field of magnetic sensors, and provides a three-dimensional magnetic sensor based on cuboid silicon-based through holes and a manufacturing method thereof. The three-dimensional magnetic sensor based on a cuboid silicon-based through hole includes a cuboid silicon substrate and three thin-film magnetoresistive units, the three thin-film magnetoresistive units are respectively formed on the surfaces of three adjacent surfaces of the rectangular parallelepiped silicon substrate, and the three thin-film magnetoresistance The resistance units are connected to each other through silicon via wires inside the rectangular parallelepiped silicon substrate, and the silicon through silicon via wires extend vertically from three adjacent surfaces of the rectangular parallelepiped silicon substrate to the inside of the rectangular parallelepiped silicon substrate for communication; the three thin film magnetoresistive units are all provided with Metal electrodes, the TSV wires are integrally formed with the metal electrodes of the three thin film magnetoresistive units. This application realizes the electrical interconnection of three thin-film magnetoresistive units through through-silicon-via wires, which has high integration and high reliability, and makes full use of the vertical space to realize the integration of high-density three-dimensional magnetic sensors, with small volume and low power consumption.

Description

Three-dimensional magnetic sensor based on cuboid silicon-based through hole and its manufacturing method

technical field

The present application relates to the field of magnetic sensors, in particular to a three-dimensional magnetic sensor based on a rectangular parallelepiped silicon-based through-hole and a manufacturing method of the three-dimensional magnetic sensor based on a rectangular parallelepiped silicon-based through-hole.

Background technique

Magnetic sensors can sense changes in physical quantities related to magnetic phenomena and convert them into electrical signals for detection, thereby directly or indirectly detecting physical information such as magnetic field size, direction, displacement, angle, and current. The traditional magnetic sensor is a current device based on the Hall effect, which has defects such as large volume, high power consumption, low sensitivity, and small measurement range. The defects of its principle and manufacturing technology limit the scope of application.

AMR (Anisotropy Magnetoresistance, anisotropic magnetoresistance) magnetoresistance effect refers to the phenomenon that the resistivity of ferromagnetic materials changes with the change of its own magnetization and the angle between the current direction. In the AMR magnetic sensor, the reluctance of the device is proportional to the square of the cosine of the angle between the magnetization direction of the magnetic material and the current direction, and there is a corresponding relationship between the extreme value of the magnetoresistance and the external magnetic field, so the AMR magnetic sensor can be used to measure the size of the external magnetic field . Compared with sensors based on the Hall effect, AMR magnetic sensors have the advantages of higher sensitivity, small size, low power consumption, and high reliability, and are more widely used.

The existing AMR magnetic sensor is a multi-layer thin film structure, limited by the structure and material properties, the magnetization direction of the thin film material is usually parallel to the substrate plane (X-Y), so the sensing direction is usually parallel to the substrate plane, generally only Effective detection of in-plane magnetic fields is difficult to achieve Z-axis direction sensing.

Contents of the invention

In order to solve one of the above-mentioned technical defects, an embodiment of the present application provides a three-dimensional magnetic sensor based on a cuboid silicon-based through hole and a manufacturing method thereof.

According to the first aspect of the embodiment of the present application, a three-dimensional magnetic sensor based on a cuboidal silicon-based through hole is provided, including a cuboidal silicon substrate and three thin film magnetoresistive units; the three thin film magnetoresistive units are respectively formed on the rectangular parallelepiped silicon substrate The surface of the three adjacent surfaces; the three thin film magnetoresistive units are connected to each other through silicon via wires inside the rectangular parallelepiped silicon substrate, and the silicon through silicon via wires extend vertically from the three adjacent surfaces of the rectangular parallelepiped silicon substrate to the rectangular parallelepiped silicon substrate The interior is connected; the three thin film magnetoresistance units are all provided with metal electrodes, and the TSV wires are integrated with the metal electrodes of the three thin film magnetoresistance units.

In the embodiment of the present application, the three thin film magnetoresistive units are all close to the common vertices of the three adjacent surfaces of the cuboid silicon substrate.

In the embodiment of the present application, the thin film magnetoresistive unit is a magnetically sensitive thin film layer based on the AMR anisotropic magnetoresistance effect.

In the embodiment of the present application, the thin film magnetoresistive unit includes a Wheatstone bridge structure.

In the embodiment of the present application, the Wheatstone bridge structure includes four resistance units, and every two resistance units are connected through metal electrodes.

In the embodiment of the present application, each resistance unit includes a plurality of magnetic resistance strips, and the plurality of magnetic resistance strips are sequentially connected by metal strips.

In the embodiment of the present application, the two ends of the magnetic resistance strip are set in a 60° pointed shape.

In the embodiment of the present application, the metal electrodes and the metal strips are composed of non-magnetic metal materials.

In the embodiment of the present application, the TSV wires are formed by etching TSV openings on the metal electrodes of the three thin film magnetoresistive units, and vertically punching holes along the TSV openings to the inside of the cuboid silicon substrate, A through-silicon hole is formed inside the rectangular parallelepiped silicon substrate; a metal material is filled in the through-silicon hole to form a through-silicon hole wire connected integrally with the metal electrode of the thin film magnetoresistive unit.

According to the second aspect of the embodiment of the present application, a method for manufacturing a three-dimensional magnetic sensor based on a cuboid silicon-based through hole is provided, including:

growing magnetic materials on the surfaces of three adjacent faces of the rectangular parallelepiped silicon substrate to form three thin-film magnetoresistive units with metal electrodes;

Through silicon via technology is used to form through silicon via wires connected to the metal electrodes of the three thin film magnetoresistive units inside the cuboid silicon substrate.

In the embodiment of the present application, the formation of through-silicon via wires connected to the metal electrodes of the three thin film magnetoresistive units inside the cuboid silicon substrate by using the through-silicon via process includes:

Etching the metal electrodes of the thin film magnetoresistive unit to form through-silicon via openings;

Carrying out deep etching on the rectangular parallelepiped silicon substrate along the through-silicon hole openings on the metal electrodes of the three thin film magnetoresistive units, until the through-silicon vias are formed inside the rectangular parallelepiped silicon substrate;

The metal material is filled in the through-silicon hole to form a through-silicon hole wire connected integrally with the metal electrode of the thin film magnetoresistive unit.

In the embodiment of the present application, the filling of the metal material in the through-silicon via to form the through-silicon via wire connected with the metal electrode of the thin film magnetoresistive unit as a whole includes:

growing an insulating dielectric layer, a metal diffusion barrier layer and a seed layer sequentially on the inner wall of the TSV;

Fill the TSV with conductive metal material by electroplating or sputtering process;

The filled TSVs are planarized to form TSV wires.

In the embodiment of the present application, the conductive metal material filled in the TSV is copper or tungsten.

The three-dimensional magnetic sensor based on the cuboidal silicon-based through-hole provided in the embodiment of the present application forms a thin film magnetoresistive unit on three adjacent surfaces of the cuboidal silicon substrate, and forms three thin-film magnetoresistive units inside the cuboidal silicon The metal electrodes of the resistance unit are connected to the integrated TSV wire, and the electrical interconnection of the three thin-film magnetoresistive units is realized through the TSV wire, which has high integration and high reliability. This application is based on the three vertical surfaces of the cuboid silicon substrate, and the detection of the X, Y, and Z three-dimensional magnetic fields is realized through the magnetoresistive units on the three surfaces, and the sensitivity is high; at the same time, the vertical space is fully utilized to realize the integration of high-density three-dimensional magnetic sensors , small size, low power consumption.

Description of drawings

The drawings described here are used to provide a further understanding of the application and constitute a part of the application. The schematic embodiments and descriptions of the application are used to explain the application and do not constitute an improper limitation to the application. In the attached picture:

FIG. 1 is a schematic structural diagram of a three-dimensional magnetic sensor based on a cuboid silicon-based through-hole provided in an embodiment of the present application;

2 is a schematic diagram of a Wheatstone bridge structure of a thin film magnetoresistive unit provided in an embodiment of the present application;

FIG. 3 is a flow chart of a method for manufacturing a three-dimensional magnetic sensor based on cuboid silicon-based through holes provided by an embodiment of the present application.

Explanation of reference signs

10-cuboid silicon substrate, 20-thin film magnetoresistive unit, 21-metal electrode, 22-magnetoresistive strip,

23-Metal strip, 24-Through silicon via wire.

Detailed ways

In order to make the technical solutions and advantages in the embodiments of the present application clearer, the exemplary embodiments of the present application will be further described in detail below in conjunction with the accompanying drawings. Apparently, the described embodiments are only part of the embodiments of the present application, and Not an exhaustive list of all embodiments. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.

In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that is usually placed when the application product is used, and is only for the convenience of describing the application and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the application.

In this application, terms such as "installation", "connection", "connection" and "fixation" should be interpreted in a broad sense, for example, it can be a fixed connection or a detachable connection, unless otherwise clearly specified and limited. , or integrated; it can be mechanically connected, or electrically connected, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction relationship between two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application according to specific situations.

The existing AMR magnetic sensor is a multilayer thin film structure. Under the action of a magnetic field parallel to the plane of the film, the magnetization direction of at least one layer of magnetic film in the AMR magnetic multilayer thin film structure changes with the size of the magnetic field. The magnetic resistance of the magnetic sensor It is proportional to the square of the cosine of the angle between the magnetization direction of the magnetic material and the current direction. Since the demagnetization field perpendicular to the film plane in the magnetic film material is several orders of magnitude larger than the demagnetization field in the plane, the magnetization direction of the film material is usually parallel to the substrate plane (X-Y), and the sensing direction is usually parallel to the substrate plane. It can detect the magnetic field components in the plane direction (X-axis and Y-axis), but it is difficult to detect the magnetic field in the Z-axis direction.

In view of the above problems, the embodiment of the present application provides a three-dimensional magnetic sensor based on a cuboid silicon-based through hole, including a cuboid silicon substrate and three thin film magnetoresistive units, and the three thin film magnetoresistive units are respectively formed on three phases of the cuboid silicon substrate. adjacent surface. The three thin film magnetoresistive units are connected to each other through silicon vias inside the rectangular parallelepiped silicon substrate, and the silicon through silicon vias extend vertically from three adjacent surfaces of the rectangular parallelepiped silicon substrate to the interior of the rectangular parallelepiped silicon substrate for communication; the three thin film magnetoresistive The units are all provided with metal electrodes, and the TSV wires are integrated with the metal electrodes of the three thin film magnetoresistive units. In this application, thin-film magnetoresistive units are formed on three adjacent surfaces of a rectangular parallelepiped silicon substrate, and a through-silicon via wire connected to the metal electrodes of the three thin-film magnetoresistance units is formed inside the rectangular parallelepiped silicon substrate through silicon via technology. The through-hole wire realizes the electrical interconnection of the three thin film magnetoresistive units, which has high integration and high reliability. The present application is based on three vertical surfaces of a cuboid silicon substrate, and the detection of X, Y, and Z three-dimensional magnetic fields is realized through the magnetoresistive units on the three surfaces, and the sensitivity is high.

This application makes full use of the vertical space to realize the integration of high-density three-dimensional magnetic sensors, with small volume and low power consumption. Since the cuboid silicon substrate is a solid structure, the angles of its adjacent planes can be strictly perpendicular to each other, and the magnetic material can be directly grown on the surface of the solid silicon substrate to form a thin film magnetoresistive unit without using additional bonding materials. The deformation is uniform under thermal disturbance, and the excellent structural strength can still be maintained under vibration or shock conditions; through-silicon via wires are formed inside the solid silicon substrate to realize the electrical connection of the thin film magnetoresistive unit instead of the traditional wire connection, so the magnetic sensor Higher sensitivity and precision.

The solutions of the embodiments of the present application are described in detail below.

FIG. 1 is a schematic structural diagram of a three-dimensional magnetic sensor based on cuboid silicon-based through holes provided in an embodiment of the present application. As shown in Figure 1, this embodiment provides a three-dimensional magnetic sensor based on a rectangular parallelepiped silicon-based through hole, including a rectangular parallelepiped silicon substrate 10 and three thin film magnetoresistive units 20, and the three thin film magnetoresistive units 20 are respectively formed on the rectangular parallelepiped silicon substrate 10 the surface of the three adjacent faces. The three thin film magnetoresistive units 20 are connected to each other through silicon via wires 24 inside the rectangular parallelepiped silicon substrate 10 , and the through silicon via wires 24 vertically extend from three adjacent surfaces of the rectangular parallelepiped silicon substrate 10 to the inside of the rectangular parallelepiped silicon substrate 10 for communication. The three thin film magnetoresistive units 20 are all provided with metal electrodes 21 , and the TSV wires 24 are integrally formed with the metal electrodes 20 of the three thin film magnetoresistive units.

In one embodiment, the TSV wires 24 are formed in the following manner: TSV openings are etched on the metal electrodes of the three thin film magnetoresistive units, holes are vertically drilled into the rectangular parallelepiped silicon substrate along the TSV openings, and A through-silicon hole is formed inside the rectangular parallelepiped silicon substrate; a metal material is filled in the through-silicon hole to form a through-silicon hole wire connected integrally with the metal electrode of the thin film magnetoresistive unit. For thin film magnetoresistive units on three adjacent faces of a rectangular parallelepiped silicon substrate, the positions of the metal electrodes are preset, that is, the positions of the metal electrodes on the three adjacent faces are fixed, and the metal electrodes on each face are on the rectangular parallelepiped silicon substrate. The extension lines of the base can intersect perpendicularly, and the intersection point of the intersection is determined. In the through-silicon via process, the time of ion etching can be determined according to the intersection point, and through precise control of the ion etching time, through-silicon vias can be formed inside the cuboid silicon substrate to realize the interconnection of metal electrodes on different surfaces.

It should be noted that the TSV wires 24 in FIG. 1 are only for illustration, and the intersection points where the TSV wires on different surfaces vertically intersect are not shown. The holes are connected, so the TSV wires 24 are connected to each other. The common sides of the three adjacent surfaces of the cuboid silicon substrate 10 are equivalent to the X-axis, Y-axis, and Z-axis of the coordinate system, and the three thin-film magnetoresistive units 20 form three sensing planes X-Y, X-Z, and Z-Y of the magnetic sensor to realize X , Y, Z three-dimensional magnetic field detection.

In one embodiment, the three thin film magnetoresistive units 20 are all close to the common vertices of the three adjacent surfaces of the rectangular parallelepiped silicon substrate 10, so as to shorten the distance between the thin film magnetoresistive units 20, which is beneficial to enhance the X, Y, Z three Axial magnetic field sensing capability. The TSV is disposed at the end of the TMR unit 20 and passes through the rectangular parallelepiped silicon substrate 10 . The conductive material filled in the TSV can be selected from copper, tungsten, polysilicon and other materials. The cuboid silicon substrate 10 can be made of monocrystalline silicon, and the size can be chosen to be 1mm×1mm×2mm.

As shown in FIG. 2 , in one embodiment, the thin film magnetoresistive unit 20 is a magnetically sensitive thin film layer based on the AMR anisotropic magnetoresistance effect. The thin film magnetoresistive unit 20 includes a Wheatstone bridge structure, and the Wheatstone bridge structure includes four resistance units, and every two resistance units are connected through metal electrodes 21 . The metal electrode 21 includes a square metal pad and a rectangular metal line, and the resistance unit is connected to the square metal pad through the rectangular metal line. Each resistance unit includes a plurality of magnetic resistance strips 22 , and the plurality of magnetic resistance strips 22 are sequentially connected by metal strips 23 . Both ends of the magnetoresistive strip 22 can be set in a 60° pointed shape to better induce the orientation of the easy axis of magnetization along the long axis. Metal electrodes 21 and metal strips 23 consist of a non-magnetic metal material, such as copper. The use of non-magnetic materials for the metal electrodes 21 and the metal strips 23 can prevent the resistance connecting adjacent magnetoresistive strips from interfering with the performance of the overall device.

FIG. 3 is a flow chart of a method for manufacturing a three-dimensional magnetic sensor based on cuboid silicon-based through holes provided by an embodiment of the present application. As shown in FIG. 3 , this embodiment provides the above-mentioned method for manufacturing a three-dimensional magnetic sensor based on a rectangular parallelepiped silicon-based through-hole. The method includes the following steps:

S1. Growing magnetic materials on the surfaces of three adjacent surfaces of the rectangular parallelepiped silicon substrate to form three thin film magnetoresistive units with metal electrodes.

The thin film magnetoresistance unit is a magnetically sensitive thin film layer based on the AMR anisotropic magnetoresistance effect. The thin film magnetoresistive unit adopts a Wheatstone bridge structure, and the Wheatstone bridge structure includes four resistance units, and every two resistance units are connected through metal electrodes. The metal electrode 21 includes a square metal pad and a rectangular metal line, and the resistance unit is connected to the square metal pad through the rectangular metal line. Each resistance unit includes a plurality of magnetic resistance strips 22 , and the plurality of magnetic resistance strips 22 are sequentially connected by metal strips 23 . Both ends of the magnetoresistive strip 22 can be formed into a 60° sharp angle shape to better induce the orientation of the easy magnetization axis along the long axis direction. Metal electrodes 21 and metal strips 23 consist of a non-magnetic metal material, such as copper. The use of non-magnetic materials for the metal electrodes 21 and the metal strips 23 can prevent the resistance connecting adjacent magnetoresistive strips from interfering with the performance of the overall device.

The magnetic materials forming the thin film magnetoresistive unit can be selected from Fe, Co, Ni and their alloys, rare earth elements and their alloys, or Mn compounds.

S2. Forming a TSV wire connected to the metal electrodes of the three thin film magnetoresistive units inside the cuboid silicon substrate by using a TSV process.

Specifically, the metal electrodes of the thin film magnetoresistive units are etched to form through-silicon via openings, and the rectangular parallelepiped silicon substrate is etched deeply along the openings of the metal electrodes of the three thin film magnetoresistive units respectively until the rectangular parallelepiped silicon A through-silicon hole is formed inside the substrate, and a metal material is filled in the through-silicon hole to form a through-silicon hole wire connected integrally with the metal electrode of the thin film magnetoresistive unit.

For the thin film magnetoresistive unit on the three adjacent surfaces of the cuboid silicon substrate, the positions of the metal electrodes are preset, that is, the positions of the metal electrodes on the three adjacent surfaces are fixed, and the metal electrodes on each surface are on the cuboid silicon substrate. The extension lines of the substrate can intersect vertically, and the intersection point is determined. The time of ion etching can be determined according to the intersection point. By precisely controlling the time of ion etching, through-silicon holes are formed inside the cuboid silicon substrate to achieve different surface interconnection of the upper metal electrodes.

In an embodiment, the etching of the TSVs on three adjacent surfaces of the cuboid silicon substrate may be performed step by step. After the metal electrodes on the upper surface of the rectangular parallelepiped silicon substrate are etched to form through-silicon holes, the rectangular parallelepiped silicon substrate is rotated to etch the metal electrodes on its side to form through-silicon holes, so that the through-silicon holes on the two sides and the upper surface The TSVs intersect to connect the metal electrodes on the three surfaces, thereby connecting the three thin film magnetoresistive units.

In another embodiment, the opening positions of the TSVs are defined by photolithography on the surface of the three thin film magnetoresistive units, and deep reactive ion etching (DRIE) technology is used to etch the opening positions of the TSVs to form silicon Through-hole openings, deep etching is performed on the openings of the through-silicon holes to form through-silicon holes extending to the inside of the cuboid silicon substrate, and make the corresponding through-silicon holes communicate with each other. Conductive material is filled in the TSVs to form interconnected TSV wires, and the electrical connection of the three thin film magnetoresistive units is realized through the TSV wires.

Filling the metal material in the TSV to form a TSV wire connected with the metal electrode of the thin film magnetoresistive unit, specifically: growing an insulating dielectric layer, a metal diffusion barrier layer and a seed layer on the inner wall of the TSV in sequence, Electroplating or sputtering process is used to fill the conductive metal material in the TSV, and the CMP (Chemical Mechanical Polishing) process is used to planarize the surface of the filled TSV to remove the excess metal material and form the TSV wire. The conductive metal material filled in the TSV is preferably copper or tungsten.

In this application, thin-film magnetoresistive units are formed on three adjacent surfaces of a rectangular parallelepiped silicon substrate, and a through-silicon via wire connected to the metal electrodes of the three thin-film magnetoresistance units is formed inside the rectangular parallelepiped silicon substrate through silicon via technology. The through-hole wire realizes the electrical interconnection of the three thin film magnetoresistive units, which has high integration and high reliability. Since the cuboid silicon substrate is a solid structure, the angles of its adjacent planes can be strictly perpendicular to each other, and the magnetic material can be directly grown on the surface of the solid silicon substrate to form a thin film magnetoresistive unit without using additional bonding materials. The deformation is uniform under thermal disturbance, and the excellent structural strength can still be maintained under vibration or shock conditions; through-silicon via wires are formed inside the solid silicon substrate to realize the electrical connection of the thin film magnetoresistive unit instead of the traditional wire connection, so the magnetic sensor Higher sensitivity and precision.

While preferred embodiments of the present application have been described, additional changes and modifications to these embodiments can be made by those skilled in the art once the basic inventive concept is appreciated. Therefore, the appended claims are intended to be construed to cover the preferred embodiment and all changes and modifications which fall within the scope of the application.

Obviously, those skilled in the art can make various changes and modifications to the application without departing from the spirit and scope of the application. In this way, if these modifications and variations of the application belong to the scope of the application and its equivalent technology, the application also intends to include these modifications and variations.

Claims (11)

1. A three-dimensional magnetic sensor based on a cuboid silicon-based through hole, comprising: a cuboid silicon substrate and three thin-film magnetoresistive units; Three thin film magnetoresistive units are respectively formed on the surfaces of three adjacent surfaces of the rectangular parallelepiped silicon substrate; The three thin film magnetoresistive units are connected to each other through silicon vias inside the rectangular parallelepiped silicon substrate, and the silicon through silicon vias extend vertically from three adjacent surfaces of the rectangular parallelepiped silicon substrate to the interior of the rectangular parallelepiped silicon substrate for communication; the three thin film magnetoresistive The units are all provided with metal electrodes, and the TSV wires are integrated with the metal electrodes of the three thin film magnetoresistive units; The TSV wires are formed in the following manner: Etching TSV openings on the metal electrodes of the three thin-film magnetoresistive units, drilling holes vertically along the TSV openings to the inside of the rectangular parallelepiped silicon substrate, and forming through-silicon vias inside the rectangular parallelepiped silicon substrate; The metal material is filled in the through-silicon hole to form a through-silicon hole wire connected integrally with the metal electrode of the thin film magnetoresistive unit. 2. The three-dimensional magnetic sensor based on cuboidal silicon-based through holes according to claim 1, wherein the three thin film magnetoresistive units are all close to the common vertices of the three adjacent surfaces of the cuboidal silicon substrate. 3. The three-dimensional magnetic sensor based on cuboid silicon-based through holes according to claim 1, wherein the thin film magnetoresistive unit is a magnetically sensitive thin film layer based on the AMR anisotropic magnetoresistance effect. 4 . The three-dimensional magnetic sensor based on cuboid silicon-based through holes according to claim 1 , wherein the thin film magnetoresistive unit comprises a Wheatstone bridge structure. 5 . The three-dimensional magnetic sensor based on cuboid silicon-based through holes according to claim 4 , wherein the Wheatstone bridge structure includes four resistance units, and every two resistance units are connected through metal electrodes. 6 . The three-dimensional magnetic sensor based on cuboid silicon-based through holes according to claim 5 , wherein each resistance unit includes a plurality of magnetoresistive strips, and the plurality of magnetoresistive strips are sequentially connected by metal strips. 7. The three-dimensional magnetic sensor based on cuboid silicon-based through-holes according to claim 6, wherein the two ends of the magnetoresistive strips are set in a 60° pointed shape. 8 . The three-dimensional magnetic sensor based on cuboid silicon-based through holes according to claim 6 , wherein the metal electrodes and the metal strips are composed of non-magnetic metal materials. 9. A method for manufacturing a three-dimensional magnetic sensor, the three-dimensional magnetic sensor being the three-dimensional magnetic sensor based on a cuboid silicon-based through-hole according to any one of claims 1 to 8, wherein the method comprises: growing magnetic materials on the surfaces of three adjacent faces of the rectangular parallelepiped silicon substrate to form three thin-film magnetoresistive units with metal electrodes; Etching the metal electrodes of the thin film magnetoresistive unit to form through-silicon via openings; Carrying out deep etching on the rectangular parallelepiped silicon substrate along the through-silicon hole openings on the metal electrodes of the three thin film magnetoresistive units, until the through-silicon vias are formed inside the rectangular parallelepiped silicon substrate; The metal material is filled in the through-silicon hole to form a through-silicon hole wire connected integrally with the metal electrode of the thin film magnetoresistive unit. 10. The manufacturing method of the three-dimensional magnetic sensor according to claim 9, wherein the filling of the metal material in the TSV to form a TSV wire connected integrally with the metal electrode of the thin film magnetoresistive unit comprises: growing an insulating dielectric layer, a metal diffusion barrier layer and a seed layer sequentially on the inner wall of the TSV; Fill the TSV with conductive metal material by electroplating or sputtering process; The filled TSVs are planarized to form TSV wires. 11 . The manufacturing method of the three-dimensional magnetic sensor according to claim 10 , wherein the conductive metal material filled in the TSV is copper or tungsten.

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