[go: up one dir, main page]

CN115353110A - Method for removing boron impurities in industrial silicon by silicomanganese slagging and refining - Google Patents

Method for removing boron impurities in industrial silicon by silicomanganese slagging and refining Download PDF

Info

Publication number
CN115353110A
CN115353110A CN202210896818.0A CN202210896818A CN115353110A CN 115353110 A CN115353110 A CN 115353110A CN 202210896818 A CN202210896818 A CN 202210896818A CN 115353110 A CN115353110 A CN 115353110A
Authority
CN
China
Prior art keywords
silicon
slagging
manganese
pipe
industrial silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202210896818.0A
Other languages
Chinese (zh)
Other versions
CN115353110B (en
Inventor
蔡云
蔡华宪
李瑞宇
罗学涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shangnan Zhongjian Industrial Co ltd
Original Assignee
Shangnan Zhongjian Industrial Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shangnan Zhongjian Industrial Co ltd filed Critical Shangnan Zhongjian Industrial Co ltd
Priority to CN202210896818.0A priority Critical patent/CN115353110B/en
Publication of CN115353110A publication Critical patent/CN115353110A/en
Application granted granted Critical
Publication of CN115353110B publication Critical patent/CN115353110B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention discloses a method for removing boron impurities in industrial silicon by silicomanganese slagging refining, which comprises the following steps: s1: putting industrial silicon and metal manganese to be purified into an intermediate frequency furnace, and raising the temperature in the furnace to 1500-1700 ℃ to obtain silicon-manganese molten alloy; s2: preserving the heat of the silicomanganese molten alloy for 2-4 hours to obtain a silicon manganese molten alloy after heat preservation; s3: adding CaO and CaF into the heat-preserved silicon-manganese molten alloy 2 Slag agent to obtain reaction product; s4: continuously introducing oxygen into the reaction product, and slagging for 5-7 h to obtain a slagging product; s5: and (3) carrying out mixed acid pickling on the slagging product by hydrochloric acid and hydrofluoric acid, washing the product after pickling to be neutral, and drying to obtain the high-purity silicon. The method realizes the high-efficiency purification of the industrial silicon, particularly can effectively reduce the boron impurities in the silicon to the standard of solar grade silicon, has simple process and low cost, saves cost and manpower, and is very suitable for industrialized popularization and use.

Description

Method for removing boron impurities in industrial silicon by silicomanganese slagging and refining
Technical Field
The invention belongs to the technical field of polysilicon purification, and particularly relates to a method for removing boron impurities in industrial silicon by silicomanganese slagging and refining.
Background
With the increasing severity of environmental issues, the search for new renewable energy is one of the problems to be solved urgently, and solar energy has attracted extensive attention to solar energy because of its natural advantages such as inexhaustible energy.
Solar cells have a very broad prospect as one of the main applications of solar energy, wherein the solar cells mainly comprise polycrystalline silicon solar cells, and the polycrystalline silicon used by the current solar cells is mainly prepared by two methods: one is a chemical method, namely, industrial silicon is converted into an intermediate product, the intermediate product is purified by the chemical method, and finally the intermediate product is reduced into high-purity silicon, and although the silicon obtained by the chemical method has high purity and good quality, the process is complex and the process cost is high; the other method is a metallurgical method, wherein the impurities in the silicon are removed in a grading manner mainly through different physical properties of the impurities and the combination of different processes, and the metallurgical method mainly comprises a slagging method, a vacuum refining method, a directional solidification method and the like.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a method for removing boron impurities in industrial silicon by silicon-manganese slagging refining.
The invention provides a method for removing boron impurities in industrial silicon by silicomanganese slagging and refining, which comprises the following steps:
s1: putting industrial silicon and metal manganese to be purified into an intermediate frequency furnace, and raising the temperature in the furnace to 1500-1700 ℃ to obtain a silicon-manganese molten alloy;
s2: preserving the heat of the silicomanganese molten alloy for 2-4 hours to obtain a silicon manganese molten alloy after heat preservation;
s3: adding CaO and CaF into the heat-preserved silicon-manganese molten alloy 2 Slag agent to obtain reaction product;
s4: continuously introducing oxygen into the reaction product, and slagging for 5-7 h to obtain a slagging product;
s5: and (3) carrying out mixed acid pickling on the slagging product by hydrochloric acid and hydrofluoric acid, washing the product after pickling to be neutral, and drying to obtain the high-purity silicon.
Preferably, in the step S1, the industrial silicon and the metal manganese are respectively used in the form of silicon blocks and manganese blocks, the mass ratio of the addition amount of the industrial silicon to the addition amount of the manganese blocks is 1 (0.05-0.1), the purity of the industrial silicon is 2-3N, and the purity of the manganese blocks is 3-4N.
Preferably, the temperature in step S2 is 1400-1500 ℃.
Preferably, wherein in step S3, the CaO and CaF 2 Respectively used in the form of powder with the purity of 2-3N, the CaO and CaF 2 The mass ratio of the addition amount of (A) is 1 (0.1-0.15).
Preferably, the flow rate of the oxygen introduced in the step S4 is 200-400 ml/min.
Preferably, the concentration of hydrofluoric acid in the mixed acid in the step S5 is 2-3 mol/L, the concentration of hydrochloric acid is 1-3 mol/L, the pickling temperature is 50-80 ℃, and the pickling time is 3-6 h.
Preferably, the intermediate frequency furnace comprises an outer furnace body and an inner furnace body, the inner furnace body is fixedly installed in the outer furnace body, a heating layer is arranged between the inner furnace body and the outer furnace body, an air release pipe is fixedly installed at the bottom in the outer furnace body, a plurality of air ports are installed on the air release pipe, an arc-shaped pipe is arranged in the inner furnace body, the lower surface of the arc-shaped pipe is wedge-shaped, connectors are arranged at two ends of the arc-shaped pipe, the two connectors are respectively connected with two ends of the air release pipe, two connecting pipes are communicated with the arc-shaped pipe, a sealing cover is arranged at the upper end of the outer furnace body, a movable plate is rotatably connected to one side of the sealing cover, the two connecting pipes slidably penetrate through the sealing cover, and a lifting mechanism is arranged on the sealing cover;
elevating system is connected with two connecting pipes, two one side of connecting pipe upper end all communicates there is the gas-supply pipe, oxygen enters into in connecting pipe and the arc through the gas-supply pipe, oxygen in the arc enters into the bleeder through two connectors, and oxygen releases through the gas port on the bleeder, it is connected with the pivot to rotate on the bleeder, install first motor on the gland, first motor passes through drive end and pivot fixed connection, go back a plurality of mixing shafts of fixedly connected with in the pivot, industry silicon, manganese metal, caO, caF 2 The slag agents are all conveyed into the furnace through the movable plateIn the furnace body.
Preferably, the driving mechanism comprises a second motor, a threaded shaft and a linkage shaft, the second motor is fixedly mounted on the sealing cover, the driving end of the second motor is fixedly connected with the threaded shaft, the linkage shaft is provided with three tail ends, one end of the linkage shaft is sleeved on the threaded shaft in a threaded manner, and the other two ends of the linkage shaft are fixedly connected with the upper ends of the two connecting pipes.
Preferably, the both ends of gassing pipe are all rotated and are connected with the sealed slider of second, and rotate the junction and be provided with the return spring, the lower extreme of the sealed slider of second rotates with the downside of gassing pipe and is connected, the upper end of the sealed slider of second is provided with the sloping block, two the inner wall of connector respectively with the both ends side slip joint of gassing pipe, sliding connection has first sealed slider on the connector, connecting spring and connector fixed connection are passed through to the upper end of first sealed slider.
Compared with the prior art, the invention has the beneficial effects that:
1. the method is mainly used for industrial application, can effectively purify industrial silicon, particularly boron impurities, purifies metallurgical-grade silicon to solar-grade silicon, firstly puts industrial silicon and manganese metal into an intermediate frequency furnace for smelting and preserving heat for a period of time, then adds a slag agent and introduces oxygen from the bottom of the intermediate frequency furnace, and finally carries out acid cleaning treatment on a silicon ingot after slagging;
2. industrial silicon, manganese metal, caO, caF 2 In the mouth that the slag agent was opened through the fly leaf was put into interior furnace body, the heating layer heats the internal furnace body and makes the inside material react each other, through actuating mechanism downstream arc pipe for the both ends of arc pipe communicate with the both ends of bleeding pipe respectively, and oxygen passes through the gas-supply pipe, passes connecting pipe, arc pipe, bleeding pipe, carries out through each gas port, begins to carry oxygen from the bottom of medium frequency furnace, and oxygen is in the former of self gravityBecause of passing each material from bottom to top, the abundant contact of effectual assurance material and oxygen, oxygen can start first motor simultaneously at the in-process that reacts with the material, and first motor drives pivot and each mixing shaft through the drive end and rotates, mixes the reactant of inside, and intensive mixing makes it fully react, drives whole intermediate frequency furnace through the cylinder and rotates, and the material is emptyd out through fly leaf department after the reaction.
Drawings
FIG. 1 is a flow chart of a method for removing boron impurities in industrial silicon by silicomanganese slagging refining, which is provided by the invention;
FIG. 2 is a schematic structural diagram of an intermediate frequency furnace;
FIG. 3 is a schematic diagram of the internal structure of the intermediate frequency furnace;
fig. 4 is a partial structural schematic diagram of the intermediate frequency furnace.
In the figure: the furnace comprises an outer furnace body 1, an inner furnace body 2, a movable plate 3, a sealing cover 4, a threaded shaft 5, a connecting pipe 6, a gas pipe 7, a first motor 8, a second motor 9, a linkage shaft 10, a rotating shaft 11, a mixing shaft 12, an arc-shaped pipe 13, a gas discharging pipe 14, a first sealing slide block 15, a connecting port 16, a connecting spring 17, a gas port 18, an inclined block 19 and a second sealing slide block 20.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
The first embodiment is as follows:
referring to fig. 1-4, a method for removing boron impurities in industrial silicon by silicomanganese slagging refining comprises the following steps:
s1: putting 15kg of industrial silicon (with the purity of 99.8%) to be purified and 1.5kg of metal manganese blocks (with the purity of 99.99%) into an intermediate frequency furnace, raising the temperature in the furnace to 1600 ℃, wherein the industrial silicon and the metal manganese are respectively used in the forms of silicon blocks and manganese blocks, the purity of the industrial silicon is 2-3N, and the purity of the manganese blocks is 3-4N;
s2: the silicon-manganese molten alloy is subjected to heat preservation for 4 hours to obtain the heat-preserved silicon-manganese molten alloy, and the heat preservation temperature is 1400-1500 ℃;
s3: adding 15kg of CaO and 1.5kg of CaF into the silicon-manganese molten alloy after heat preservation 2 Slag agent, caO and CaF 2 Are respectively used in the form of powder with the purity of 2-3N;
s4: continuously introducing oxygen into the intermediate frequency furnace at the flow rate of 400ml/min, and slagging for 5 hours to obtain a slagging product;
s5: and (3) pickling the slagging silicon ingot with mixed acid consisting of 3mol/L hydrochloric acid and 3mol/L hydrofluoric acid at 70 ℃ for 5 hours, and then filtering and washing with deionized water for production.
The purity of the acid-washed silicon was 99.99978%, as determined by Glow Discharge Mass Spectrometry (GDMS), with a boron impurity content of 0.15ppmw.
The intermediate frequency furnace comprises an outer furnace body 1 and an inner furnace body 2, the inner furnace body 2 is fixedly arranged in the outer furnace body 1, a heating layer is arranged between the inner furnace body 2 and the outer furnace body 1, an air release pipe 14 is fixedly arranged at the bottom in the outer furnace body 1, a plurality of air ports 18 are arranged on the air release pipe 14, an arc-shaped pipe 13 is arranged in the inner furnace body 2, the lower surface of the arc-shaped pipe 13 is wedge-shaped, two ends of the arc-shaped pipe 13 are provided with connecting ports 16, the two connecting ports 16 are respectively connected with two ends of the air release pipe 14, the arc-shaped pipe 13 is communicated with two connecting pipes 6, a sealing cover 4 is arranged at the upper end of the outer furnace body 1, one side of the sealing cover 4 is rotatably connected with a movable plate 3, the two connecting pipes 6 slide through the sealing cover 4, and a lifting mechanism is arranged on the sealing cover 4;
elevating system is connected with two connecting pipes 6, one side of two connecting pipes 6 upper ends all communicates with gas-supply pipe 7, oxygen enters into connecting pipe 6 and arc 13 through gas-supply pipe 7 in, oxygen in arc 13 enters into bleeder 14 through two connectors 16, and oxygen releases through gas port 18 on the bleeder 14, it is connected with pivot 11 to rotate on the bleeder 14, install first motor 8 on the sealed lid 4, first motor 8 passes through drive end and 11 fixed connection in pivot, still a plurality of mixing shaft 12 of fixedly connected with in the pivot 11, industrial silicon, manganese metal, caO, caF 2 The slag agents are all conveyed into the inner furnace body 2 through the movable plate 3.
By rotating the movable plate 3, industrial silicon, manganese metal, caO and CaF can be used 2 Slag agent is put into interior furnace body 2 through the opening that fly leaf 3 was opened, the heating layer heats interior furnace body 2 and makes inside material react each other, move down arc pipe 13 through actuating mechanism, make the both ends of arc pipe 13 communicate with the both ends of bleeder 14 respectively, oxygen passes through gas-supply pipe 7, pass connecting pipe 6, arc pipe 13, bleeder 14, carry out through each gas port 18, from the bottom of medium frequency furnace transport oxygen, oxygen passes each material from bottom to top at the reason of self gravity, the effectual abundant contact of guaranteeing material and oxygen, oxygen is at the in-process with the material reaction, can start first motor 8 simultaneously, first motor 8 drives pivot 11 and each mixing shaft 12 through the drive end and rotates, mix the reactant of inside, the intensive mixing makes its fully react, drive whole medium frequency furnace through the cylinder and rotates, the material is emptyd out through fly leaf 3 department after the reaction.
The driving mechanism comprises a second motor 9, a threaded shaft 5 and a linkage shaft 10, the second motor 9 is fixedly mounted on the sealing cover 4, the driving end of the second motor 9 is fixedly connected with the threaded shaft 5, the linkage shaft 10 is provided with three tail ends, one end of the linkage shaft 10 is in threaded sleeve connection with the threaded shaft 5, the other two ends of the linkage shaft 10 are fixedly connected with the upper ends of the two connecting pipes 6, and the inside industrial silicon, metal manganese, caO and CaF are fixedly connected 2 When the slag agents are mixed and react with each other, in order to avoid the influence of the arc-shaped pipe 13 on the reaction, the arc-shaped pipe is moved upwards, the second motor 9 drives the threaded shaft 5 to rotate through the driving end, and the linkage shaft 10 drives the linkage shaft 10 to move up and down along with the rotation of the threaded shaft 5 because the two connecting pipes 6 limit the angular position, so that the linkage shaft 10 drives the two connecting pipes 6 to move up and down.
The two ends of the air release pipe 14 are rotatably connected with second sealing slide blocks 20, return springs are arranged at the rotating connection positions, the lower ends of the second sealing slide blocks 20 are rotatably connected with the lower side of the air release pipe 14, inclined blocks 19 are arranged at the upper ends of the second sealing slide blocks 20, the inner walls of the two connecting ports 16 are respectively clamped with the side faces of the two ends of the air release pipe 14 in a sliding mode, the connecting ports 16 are connected with first sealing slide blocks 15 in a sliding mode, and the upper ends of the first sealing slide blocks 15 are fixedly connected with the connecting ports 16 through connecting springs 17;
when the arc-shaped pipe 13 is moved downwards, the two connecting ports 16 are aligned with the two ends of the air release pipe 14 up and down, when the connecting ports 16 move downwards, the lower ends of the connecting ports 16 are in contact with the inclined block 19, because the inclined block 19 is an inclined plane, the inclined block 19 can be inclined along with the downward movement of the connecting ports 16, the inclined block 19 drives the second sealing slide block 20 to incline, in the inclining process, the lower end of the first sealing slide block 15 is abutted against the air release pipe 14, the connecting ports 16 can be gradually aligned with and communicated with the two ends of the air release pipe 14 left and right, so that oxygen can be introduced into the arc-shaped pipe 13 through the connecting pipe 6, enter the air release pipe 14 and be output through the air ports 18, oxygen is introduced from the bottom of the inner furnace body 2, the sufficient contact between the oxygen and various materials is facilitated, the reaction is facilitated, when the connecting ports 16 are separated from the air release pipe 14, the second sealing slide block the two ends of the air release pipe 14 by resetting under the action of the return spring, and simultaneously, the first sealing slide block the connecting ports 16 under the elastic action of the connecting spring 17.
The second embodiment:
referring to fig. 1-4, a method for removing boron impurities in industrial silicon by silicomanganese slagging refining comprises the following steps:
s1: putting 15kg of industrial silicon (with the purity of 99.8%) to be purified and 1.5kg of metal manganese blocks (with the purity of 99.99%) into an intermediate frequency furnace, raising the temperature in the furnace to 1750 ℃, wherein the industrial silicon and the metal manganese are respectively used in the form of silicon blocks and manganese blocks, the purity of the industrial silicon is 2-3N, and the purity of the manganese blocks is 3-4N;
s2: preserving the heat of the silicomanganese molten alloy for 3 hours to obtain the silicon manganese molten alloy after heat preservation;
s3: adding 15kg of CaO and 1.5kg of CaF into the silicon-manganese molten alloy after heat preservation 2 Slag agent, caO and CaF 2 Are respectively used in the form of powder with the purity of 2-3N;
s4: continuously introducing oxygen into the intermediate frequency furnace at the flow rate of 300ml/min, and slagging for 5 hours to obtain a slagging product;
s5: and (3) pickling the slagging silicon ingot with mixed acid consisting of 2mol/L hydrochloric acid and 3mol/L hydrofluoric acid at 80 ℃ for 6 hours, and then filtering and washing with deionized water for production.
The purity of the pickled silicon was 99.99948% as determined by Glow Discharge Mass Spectrometry (GDMS), with a boron impurity content of 0.11ppmw, wherein the structure and method of use of the intermediate frequency furnace was the same as in the first embodiment.
Example three:
referring to fig. 1-4, a method for removing boron impurities in industrial silicon by silicomanganese slagging refining comprises the following steps:
s1: putting 15kg of industrial silicon (with the purity of 99.8%) to be purified and 1.5kg of metal manganese blocks (with the purity of 99.99%) into an intermediate frequency furnace, raising the temperature in the furnace to 1550 ℃, and using the industrial silicon and the metal manganese in the form of silicon blocks and manganese blocks respectively, wherein the purity of the industrial silicon is 2-3N, and the purity of the manganese blocks is 3-4N;
s2: preserving the heat of the silicomanganese molten alloy for 3 hours to obtain the silicon manganese molten alloy after heat preservation;
s3: adding 15kg of CaO and 1.5kg of CaF into the silicon-manganese molten alloy after heat preservation 2 Slag agent, caO and CaF 2 Are respectively used in the form of powder with the purity of 2-3N;
s4: continuously introducing oxygen into the intermediate frequency furnace at the flow rate of 200ml/min, and slagging for 6 hours to obtain a slagging product;
s5: and (3) pickling the slagging silicon ingot with mixed acid consisting of 1mol/L hydrochloric acid and 2mol/L hydrofluoric acid at 50 ℃ for 3h, and then filtering and washing with deionized water for production.
The purity of the pickled silicon is 99.99943% measured by a Glow Discharge Mass Spectrometer (GDMS), wherein the content of boron impurities is 0.08ppmw, and the structure and the using method of the intermediate frequency furnace are the same as those of the first embodiment.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (9)

1. A method for removing boron impurities in industrial silicon by silicomanganese slagging and refining is characterized by comprising the following steps:
s1: putting industrial silicon and metal manganese to be purified into an intermediate frequency furnace, and raising the temperature in the furnace to 1500-1700 ℃ to obtain a silicon-manganese molten alloy;
s2: preserving the heat of the silicomanganese molten alloy for 2-4 hours to obtain the silicon manganese molten alloy after heat preservation;
s3: adding CaO and CaF into the heat-preserved silicon-manganese molten alloy 2 Slag agent to obtain reaction product;
s4: continuously introducing oxygen into the reaction product, and slagging for 5-7 h to obtain a slagging product;
s5: and (3) carrying out mixed acid pickling on the slagging product by hydrochloric acid and hydrofluoric acid, washing the product after pickling to be neutral, and drying to obtain the high-purity silicon.
2. The method for removing boron impurities in industrial silicon through silicon-manganese slagging refining according to claim 1, wherein in the step S1, the industrial silicon and the metal manganese are used in the form of silicon blocks and manganese blocks respectively, the mass ratio of the addition amount of the industrial silicon to the addition amount of the manganese blocks is 1 (0.05-0.1), the purity of the industrial silicon is 2-3N, and the purity of the manganese blocks is 3-4N.
3. The method for removing boron impurities in industrial silicon through silicomanganese slagging refining according to claim 1, wherein the temperature in step S2 is 1400-1500 ℃.
4. The method for removing boron impurities in industrial silicon by silicomanganese slagging refining according to claim 1, wherein in step S3, caO and CaF are added 2 Respectively used in the form of powder with the purity of 2-3N, the CaO and CaF 2 The mass ratio of the addition amount of (A) is 1 (0.1-0.15).
5. The method for removing boron impurities in industrial silicon through silicomanganese slagging refining according to claim 1, wherein the flow rate of the oxygen introduced in the step S4 is 200-400 ml/min.
6. The method for removing boron impurities in industrial silicon through silicon-manganese slagging refining as claimed in claim 1, wherein in step S5, the concentration of hydrofluoric acid in the mixed acid is 2-3 mol/L, the concentration of hydrochloric acid is 1-3 mol/L, the pickling temperature is 50-80 ℃, and the pickling time is 3-6 h.
7. The method for removing boron impurities in industrial silicon through silicomanganese slagging refining according to claim 1, characterized in that the intermediate frequency furnace comprises an outer furnace body (1) and an inner furnace body (2), the inner furnace body (2) is fixedly installed in the outer furnace body (1), a heating layer is arranged between the inner furnace body (2) and the outer furnace body (1), an air exhaust pipe (14) is fixedly installed at the bottom in the outer furnace body (1), a plurality of air ports (18) are installed on the air exhaust pipe (14), an arc-shaped pipe (13) is arranged in the inner furnace body (2), the lower surface of the arc-shaped pipe (13) is wedge-shaped, two ends of the arc-shaped pipe (13) are provided with connecting ports (16), the two connecting ports (16) are respectively connected with two ends of the air exhaust pipe (14), the arc-shaped pipe (13) is communicated with two connecting pipes (6), the upper end of the outer furnace body (1) is provided with a sealing cover (4), one side of the sealing cover (4) is rotatably connected with a movable plate (3), the two connecting pipes (6) slidably pass through the sealing cover (4), and a lifting mechanism is arranged on the sealing cover (4);
elevating system is connected, two with two connecting pipe (6) one side of connecting pipe (6) upper end all communicates there is gas-supply pipe (7), oxygen enters into in connecting pipe (6) and arc pipe (13) through gas-supply pipe (7), oxygen in arc pipe (13) enters into out trachea (14) through two connector (16), and oxygen releases through gas port (18) on out trachea (14), it is connected with pivot (11) to rotate on out trachea (14), install first motor (8) on sealed lid (4), first motor (8) are through drive end and pivot (11) fixed connection, go back a plurality of hybrid shaft (12) of fixedly connected with in pivot (11), industry silicon, metal manganese, caO, caF 2 The slag agents are all conveyed into the inner furnace body (2) through the movable plate (3).
8. The method for removing boron impurities in industrial silicon through silicon-manganese slagging refining according to claim 7, wherein the driving mechanism comprises a second motor (9), a threaded shaft (5) and a linkage shaft (10), the second motor (9) is fixedly installed on the sealing cover (4), the driving end of the second motor (9) is fixedly connected with the threaded shaft (5), the linkage shaft (10) has three ends, one end of the linkage shaft (10) is in threaded sleeve connection with the threaded shaft (5), and the other two ends of the linkage shaft (10) are fixedly connected with the upper ends of the two connecting pipes (6).
9. The method for removing boron impurities in industrial silicon through silicon-manganese slagging refining according to claim 7, wherein the two ends of the gas release pipe (14) are rotatably connected with second sealing sliders (20), a return spring is arranged at the rotary connection position, the lower end of each second sealing slider (20) is rotatably connected with the lower side of the gas release pipe (14), the upper end of each second sealing slider (20) is provided with an inclined block (19), the inner walls of the two connecting ports (16) are respectively in sliding clamping connection with the side surfaces of the two ends of the gas release pipe (14), the connecting ports (16) are slidably connected with first sealing sliders (15), and the upper ends of the first sealing sliders (15) are fixedly connected with the connecting ports (16) through connecting springs (17).
CN202210896818.0A 2022-07-28 2022-07-28 Method for removing boron impurities in industrial silicon by silicomanganese slagging refining Active CN115353110B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210896818.0A CN115353110B (en) 2022-07-28 2022-07-28 Method for removing boron impurities in industrial silicon by silicomanganese slagging refining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210896818.0A CN115353110B (en) 2022-07-28 2022-07-28 Method for removing boron impurities in industrial silicon by silicomanganese slagging refining

Publications (2)

Publication Number Publication Date
CN115353110A true CN115353110A (en) 2022-11-18
CN115353110B CN115353110B (en) 2023-11-21

Family

ID=84031957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210896818.0A Active CN115353110B (en) 2022-07-28 2022-07-28 Method for removing boron impurities in industrial silicon by silicomanganese slagging refining

Country Status (1)

Country Link
CN (1) CN115353110B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115353109A (en) * 2022-07-28 2022-11-18 商南中剑实业有限责任公司 Device and method for removing impurities in industrial silicon by using sodium slag agent doped with tin powder

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1935647A (en) * 2006-05-08 2007-03-28 高文秀 P-type solar cell grade polycrystalline silicon preparing process
CN101423220A (en) * 2008-11-17 2009-05-06 上海普罗新能源有限公司 Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof
CN102134076A (en) * 2011-01-25 2011-07-27 云南乾元光能产业有限公司 Method for removing boron impurity in metallurgical silicon
CN102153088A (en) * 2011-02-18 2011-08-17 厦门大学 Method for carrying out slagging, pickling and boron removal on metal silicon
CN103318894A (en) * 2013-06-27 2013-09-25 大连理工大学 Method for removing boron in polycrystalline silicon
US20140227548A1 (en) * 2012-06-27 2014-08-14 James J. Myrick Nanoparticles, Compositions, Manufacture and Applications
CN104817088A (en) * 2015-05-04 2015-08-05 日鑫(永安)硅材料有限公司 Method of low-cost preparing solar-grade polycrystalline silicon
CN106555224A (en) * 2015-09-30 2017-04-05 枣庄市天工新能源器材有限公司 A kind of production method and production equipment of monocrystal silicon
CN110482556A (en) * 2019-09-10 2019-11-22 中国科学院合肥物质科学研究院 A kind of slag former and its application method removing boron for silicon materials low-temperature refining
CN114715899A (en) * 2022-04-28 2022-07-08 包头市迪耀废弃资源综合利用科技有限公司 Equipment and method for producing industrial silicon by utilizing solid waste silicon mud and industrial silicon waste powder

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1935647A (en) * 2006-05-08 2007-03-28 高文秀 P-type solar cell grade polycrystalline silicon preparing process
CN101423220A (en) * 2008-11-17 2009-05-06 上海普罗新能源有限公司 Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof
CN102134076A (en) * 2011-01-25 2011-07-27 云南乾元光能产业有限公司 Method for removing boron impurity in metallurgical silicon
CN102153088A (en) * 2011-02-18 2011-08-17 厦门大学 Method for carrying out slagging, pickling and boron removal on metal silicon
US20140227548A1 (en) * 2012-06-27 2014-08-14 James J. Myrick Nanoparticles, Compositions, Manufacture and Applications
CN103318894A (en) * 2013-06-27 2013-09-25 大连理工大学 Method for removing boron in polycrystalline silicon
CN104817088A (en) * 2015-05-04 2015-08-05 日鑫(永安)硅材料有限公司 Method of low-cost preparing solar-grade polycrystalline silicon
CN106555224A (en) * 2015-09-30 2017-04-05 枣庄市天工新能源器材有限公司 A kind of production method and production equipment of monocrystal silicon
CN110482556A (en) * 2019-09-10 2019-11-22 中国科学院合肥物质科学研究院 A kind of slag former and its application method removing boron for silicon materials low-temperature refining
CN114715899A (en) * 2022-04-28 2022-07-08 包头市迪耀废弃资源综合利用科技有限公司 Equipment and method for producing industrial silicon by utilizing solid waste silicon mud and industrial silicon waste powder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115353109A (en) * 2022-07-28 2022-11-18 商南中剑实业有限责任公司 Device and method for removing impurities in industrial silicon by using sodium slag agent doped with tin powder

Also Published As

Publication number Publication date
CN115353110B (en) 2023-11-21

Similar Documents

Publication Publication Date Title
CN101475174B (en) Method for purifying industrial silicon for preparing solar grade silicon
CN101481111B (en) Method for preparing high-purity silicon by high temperature gas-solid reaction
CN101318656B (en) Metallurgical purification method of polysilicon
CN109052407A (en) A method for recycling and purifying silicon cutting waste
CN107416839B (en) Method for preparing lithium ion battery cathode material by using diamond wire cutting waste silicon powder slurry
CN102583389A (en) Method for purifying industrial silicon through external refining
CN115353110A (en) Method for removing boron impurities in industrial silicon by silicomanganese slagging and refining
CN102001661B (en) Method for slagging, boron removal and purification of metalluragical silicon
CN101891202B (en) Method for removing boron impurities contained in polysilicon by injecting electron beams
CN110316705B (en) Method for preparing high-purity selenium from crude selenium product
CN109930000B (en) Method for purifying lepidolite leaching solution
CN109354024A (en) A kind of device and method of infant industry silicon separation, impurity removal
CN116022743B (en) Antimony ditelluride and preparation method thereof
CN101181997A (en) Method for preparing metallic silicon material
CN102101671A (en) Method for removing boron and phosphorus impurities from industrial silicon by using magnesium-containing compound
CN115468419B (en) Device and method for removing boron impurities in metallurgical grade silicon in submerged arc furnace
CN112897475A (en) Method for producing high-purity selenium by ultrasonic enhanced reduction
CN112744817A (en) Solar-grade silicon with porous structure and preparation method and application thereof
CN117691230A (en) A pretreatment method and wet recovery method for waste lithium iron phosphate battery black powder
CN117361540A (en) Novel industrial silicon purification method based on oxidation refining
CN107098393B (en) Preparation method of high-purity manganese monoxide
CN110342525A (en) A kind of method of low cost removal boron impurities in metallurgical silicon
CN111304751B (en) A kind of raw material purification method and device for removing H2O by reactive gas
CN108793170A (en) A kind of ventilation slag making of industrial silicon is smelted combine pretreatment after acid cleaning process
CN119034622B (en) Gas phase reactor for producing high-bulk density boron carbide and reaction process thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant