CN115332225A - Inorganic interposer structure and method for making the same - Google Patents
Inorganic interposer structure and method for making the same Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及半导体封装技术领域，具体地涉及一种无机中介层结构及无机中介层结构的制作方法。The invention relates to the technical field of semiconductor packaging, in particular to an inorganic interposer structure and a manufacturing method of the inorganic interposer structure.
背景技术Background technique
在芯片封装中，中介层是多芯片模块或电路板传递电信号的管道，可以充当多颗裸片和电路板之间的连接和通信桥梁。中介层按其组成材料可以分为有机中介层和无机中介层。有机中介层由有填充剂的有机材料等制成，无机中介层可以由玻璃或陶瓷等材料制成。无机中介层基于其良好的机械新能，良好的热导和硅晶元较小的热胀不匹配性，在高功耗，高可靠性，但导线间距要求低的领域会有更好的应用前景。In chip packaging, the interposer is a conduit for electrical signals transmitted by multi-chip modules or circuit boards, and can act as a connection and communication bridge between multiple dies and circuit boards. Interposers can be classified into organic interposers and inorganic interposers according to their constituent materials. The organic interlayer is made of organic materials with fillers, and the inorganic interlayer can be made of materials such as glass or ceramics. Based on its good mechanical properties, good thermal conductivity and small thermal expansion mismatch of silicon wafers, the inorganic interposer will have better applications in fields with high power consumption, high reliability, but low wire spacing requirements prospect.
现有的无机中介层还存在很多可以改进的结构和工艺，例如，提高线宽来满足更多复杂芯片的集成，才能提高芯片封装的结构和性能。There are still many structures and processes that can be improved in the existing inorganic interposer. For example, the structure and performance of chip packaging can only be improved by increasing the line width to meet the integration of more complex chips.
发明内容Contents of the invention
本发明实施例的目的是提供一种无机中介层结构，该无机中介层结构可以提高芯片封装的结构和性能。The purpose of the embodiments of the present invention is to provide an inorganic interposer structure, which can improve the structure and performance of chip packaging.
为了实现上述目的，本发明实施例提供一种无机中介层结构，所述无机中介层结构中被嵌入被动元器件，所述无机中介层结构中具有导线，所述导线用于基于该无机中介层结构进行封装的多芯片之间以及芯片与所述被动元器件之间的电传输。In order to achieve the above object, an embodiment of the present invention provides an inorganic interposer structure, in which passive components are embedded, the inorganic interposer structure has wires, and the wires are used to The structure performs electrical transmission among the packaged multi-chips and between the chips and the passive components.
可选地，所述被动元器件包括电容、电感、电阻和电压调节器。Optionally, the passive components include capacitors, inductors, resistors and voltage regulators.
可选地，所述无机中介层结构为多层结构，所述无机中介层结构的层数根据所述导线的布置和/或所述被动元器件的数量、结构和大小选择。Optionally, the inorganic interposer structure is a multilayer structure, and the number of layers of the inorganic interposer structure is selected according to the arrangement of the wires and/or the number, structure and size of the passive components.
可选地，所述无机中介层结构的每层结构上设置有穿孔，用于通过所述穿孔进行对准后，对所述无机中介层结构的多层结构进行烧结。Optionally, each layer structure of the inorganic interposer structure is provided with a perforation, which is used for sintering the multi-layer structure of the inorganic interposer structure after alignment through the perforation.
可选地，所述穿孔为金属穿孔，用于连接所述无机中介层结构的多层结构中的所述导线和所述被动元器件，以实现层与层之间通信。Optionally, the through-holes are metal through-holes, which are used to connect the wires and the passive components in the multi-layer structure of the inorganic interposer structure, so as to realize communication between layers.
可选地，所述无机中介层结构的材料根据所述被动元器件的热胀系数或所述被动元器件的制造工艺进行选择，其中，所述无机中介层和所述被动元器件的热胀系数的偏差在预设范围内，所述无机中介层和所述被动元器件的制作工艺具有内似性。Optionally, the material of the inorganic interposer structure is selected according to the coefficient of thermal expansion of the passive component or the manufacturing process of the passive component, wherein the thermal expansion of the inorganic interposer and the passive component If the deviation of the coefficient is within the preset range, the manufacturing process of the inorganic intermediary layer and the passive component has internal similarity.
可选地，所述无机中介层结构的材料为陶瓷或玻璃。Optionally, the material of the inorganic interposer structure is ceramic or glass.
可选地，所述无机中介层结构包括线路板和侧壁支撑结构，所述无机中介层结构通过所述线路板和所述侧壁支撑结构构成容纳芯片的空间。Optionally, the inorganic interposer structure includes a circuit board and a sidewall support structure, and the inorganic interposer structure forms a space for accommodating chips through the circuit board and the sidewall support structure.
本发明实施例还提供一种无机中介层结构的制作方法，所述无机中介层结构的制作方法包括：将导线和被动元器件布置在所述无机中介层结构的至少一层结构上，所述无机中介层结构为多层结构；以及连接所述无机中介层结构的每层结构，所述导线用于基于该无机中介层结构进行封装的多芯片之间以及芯片与所述被动元器件之间的电传输。An embodiment of the present invention also provides a method for manufacturing an inorganic interposer structure, the method for manufacturing an inorganic interposer structure includes: arranging wires and passive components on at least one layer of the inorganic interposer structure, the The inorganic interposer structure is a multi-layer structure; and each layer structure of the inorganic interposer structure is connected, and the wires are used between multiple chips packaged based on the inorganic interposer structure and between chips and the passive components electrical transmission.
可选地，在所述将导线和被动元器件布置在所述无机中介层结构的至少一层结构上之前，所述中介层结构的制作方法还包括：根据所述导线的布置和/或待嵌入所述无机中介层结构的所述被动元器件的数量、结构和大小，确定所述无机中介层结构的层数。Optionally, before arranging the wires and passive components on at least one layer of the inorganic interposer structure, the method for manufacturing the interposer structure further includes: according to the arrangement of the wires and/or to be The number, structure and size of the passive components embedded in the inorganic interposer structure determine the number of layers of the inorganic interposer structure.
可选地，在所述确定所述无机中介层结构的层数之后，所述中介层结构的制作方法还包括：根据所述导线和所述被动元器件在所述中介层结构的多层结构上的布置，在所述无机中介层结构的每层结构上设置穿孔，用于通过所述穿孔进行对准后，对所述无机中介层结构的多层结构进行烧结。Optionally, after the determination of the number of layers of the inorganic interposer structure, the method for manufacturing the interposer structure further includes: In the above arrangement, perforations are provided on each layer structure of the inorganic interposer structure, for alignment through the through holes, and then the multilayer structure of the inorganic interposer structure is sintered.
可选地，所述穿孔为金属穿孔，用于连接所述无机中介层结构的多层结构中的所述导线和所述被动元器件，以实现层与层之间通信。Optionally, the through-holes are metal through-holes, which are used to connect the wires and the passive components in the multi-layer structure of the inorganic interposer structure, so as to realize communication between layers.
可选地，所述被动元器件包括电容、电感、电阻和电压调节器。Optionally, the passive components include capacitors, inductors, resistors and voltage regulators.
可选地，所述无机中介层结构的材料根据所述被动元器件的热胀系数或所述被动元器件的制造工艺进行选择，其中，所述无机中介层和所述被动元器件的热胀系数的偏差在预设范围内，所述无机中介层和所述被动元器件的制作工艺具有内似性。Optionally, the material of the inorganic interposer structure is selected according to the coefficient of thermal expansion of the passive component or the manufacturing process of the passive component, wherein the thermal expansion of the inorganic interposer and the passive component If the deviation of the coefficient is within the preset range, the manufacturing process of the inorganic intermediary layer and the passive component has internal similarity.
可选地，所述无机中介层结构的材料为陶瓷或玻璃。Optionally, the material of the inorganic interposer structure is ceramic or glass.
可选地，所述无机中介层结构包括线路板和侧壁支撑结构，无机中介层结构的制作方法还包括：连接所述线路板和所述侧壁支撑结构，所述无机中介层结构通过所述线路板和所述侧壁支撑结构构成容纳芯片的空间。Optionally, the inorganic interposer structure includes a circuit board and a sidewall support structure, and the manufacturing method of the inorganic interposer structure further includes: connecting the circuit board and the sidewall support structure, and the inorganic interposer structure passes through the The circuit board and the side wall support structure form a space for accommodating chips.
通过上述技术方案，本发明实施例将被动元器件嵌入无机中介层结构中，既可以减少外部电路板（例如，基板上）被动元器件所占空间，还可以使芯片与被动元器件之间的通信距离更近；且导线在无机中介层中的布置可以根据多芯片之间通信、芯片与被动元器件之间通信、以及芯片与外部电路板通信进行灵活设计，可以增强基于该无机中介层结构形成的封装结构电路设计的复杂性。Through the above technical solution, the embodiment of the present invention embeds the passive components into the inorganic interposer structure, which can not only reduce the space occupied by the passive components on the external circuit board (for example, on the substrate), but also make the space between the chip and the passive components The communication distance is shorter; and the arrangement of wires in the inorganic interposer can be flexibly designed according to the communication between multiple chips, the communication between the chip and passive components, and the communication between the chip and the external circuit board, which can enhance the structure based on the inorganic interposer. The complexity of the circuit design of the formed package structure.
本发明实施例的其它特征和优点将在随后的具体实施方式部分予以详细说明。Other features and advantages of the embodiments of the present invention will be described in detail in the following detailed description.
附图说明Description of drawings
附图是用来提供对本发明实施例的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明实施例，但并不构成对本发明实施例的限制。在附图中：The accompanying drawings are used to provide a further understanding of the embodiments of the present invention, and constitute a part of the specification, and are used together with the following specific embodiments to explain the embodiments of the present invention, but do not constitute limitations to the embodiments of the present invention. In the attached picture:
图1是本发明实施例提供的无机中介层结构的切面示意图；Fig. 1 is a cross-sectional schematic diagram of an inorganic interposer structure provided by an embodiment of the present invention;
图2是示例无机中介层结构制作的示意图；Fig. 2 is the schematic diagram that example inorganic interposer structure is made;
图3本发明实施例提供的无机中介层结构的制作方法的流程示意图。FIG. 3 is a schematic flowchart of a method for fabricating an inorganic interposer structure provided by an embodiment of the present invention.
具体实施方式Detailed ways
以下结合附图对本发明实施例的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明实施例，并不用于限制本发明实施例。The specific implementation manners of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation manners described here are only used to illustrate and explain the embodiments of the present invention, and are not intended to limit the embodiments of the present invention.
图1是本发明实施例提供的无机中介层结构的切面示意图，请参考图1，所述无机中介层结构中被嵌入被动元器件，所述无机中介层结构中具有导线，所述导线用于基于该无机中介层结构进行封装的多芯片之间以及芯片与所述被动元器件之间的电传输。Fig. 1 is a cross-sectional schematic diagram of an inorganic interposer structure provided by an embodiment of the present invention, please refer to Fig. 1, passive components are embedded in the inorganic interposer structure, and there are wires in the inorganic interposer structure, and the wires are used for Based on the inorganic interposer structure, the electric transmission between the packaged multi-chips and between the chips and the passive components is carried out.
本发明实施例优选的所述无机中介层结构的材料为陶瓷或玻璃。The preferred material of the inorganic interposer structure in the embodiment of the present invention is ceramic or glass.
本发明实施例优选的所述被动元器件包括电容、电感、电阻和电压调节器等。The preferred passive components in the embodiment of the present invention include capacitors, inductors, resistors, voltage regulators and the like.
以示例说明，可以将设计在外部电路板（例如，基板上）的被动元器件嵌入无机中介层结构中，既可以减少基板上被动元器件和导线所占空间，还可以使基于该无机中介层结构进行封装的芯片与被动元器件之间、以及被动元器件之间的通信距离更近。As an example, passive components designed on an external circuit board (for example, on a substrate) can be embedded in an inorganic interposer structure, which can not only reduce the space occupied by passive components and wires on the substrate, but also enable The communication distance between the chip packaged with the structure and the passive components, and between the passive components is closer.
所述无机中介层中还具有导线，可以进一步缩短通信距离，保证电器件之间的通信质量，同时导线的布置可以根据多芯片之间通信、芯片与被动元器件之间通信、以及芯片与外部电路板（例如，基板上芯片）通信进行灵活设计，可以增强基于该无机中介层结构形成的封装结构电路设计的复杂性，更适用于高功耗半导体产品。There are wires in the inorganic intermediary layer, which can further shorten the communication distance and ensure the communication quality between electrical devices. The flexible design of circuit board (for example, chip on substrate) communication can enhance the complexity of the circuit design of the packaging structure based on the inorganic interposer structure, and is more suitable for high power consumption semiconductor products.
本发明实施例优选的所述无机中介层结构可以包括线路板和侧壁支撑结构，所述无机中介层结构通过所述线路板和所述侧壁支撑结构构成容纳芯片的空间。In the preferred embodiment of the present invention, the inorganic interposer structure may include a circuit board and a sidewall support structure, and the inorganic interposer structure forms a space for accommodating chips through the circuit board and the sidewall support structure.
请参考图1，以电容嵌入无机中介层结构为例，线路板中加深的线示出了导线。基于图1为无机中介层结构的侧视图，侧壁支撑结构中加深的横线示出了电容的电极，加深的竖线输出了连接穿孔（后文会详细介绍），也可以看作为导线。Please refer to FIG. 1 , taking the capacitor embedded in the inorganic interposer structure as an example, the deepened line in the circuit board shows the wire. Based on the side view of the inorganic interposer structure in Figure 1, the deepened horizontal lines in the sidewall support structure show the electrodes of the capacitor, and the deepened vertical lines output the connection perforations (described in detail later), which can also be regarded as wires.
继续参考图1，多个芯片可以位于该无机中介层结构的线路板的上表面，以及线路板和侧壁支撑结构构成容纳芯片的空间，以实现多芯片之间的通信。该优选的无机中介层结构可以在线路板上布置多导线，在侧壁支撑结构内布置被动元器件以及连接穿孔和被动元器件的导线，既可以实现导线和被动元器件的布局，又可以不限制位于线路板和侧壁支撑结构构成的空间的芯片的高度和大小。Continuing to refer to FIG. 1 , multiple chips can be located on the upper surface of the circuit board of the inorganic interposer structure, and the circuit board and the sidewall support structure form a space for accommodating the chips, so as to realize communication between the multiple chips. The preferred inorganic interposer structure can arrange multiple wires on the circuit board, arrange passive components and wires connecting through holes and passive components in the side wall support structure, which can realize the layout of wires and passive components without Limit the height and size of the chip in the space formed by the circuit board and the sidewall support structure.
进一步优选的，所述无机中介层结构的材料根据所述被动元器件的热胀系数或所述被动元器件的制造工艺进行选择。其中，所述无机中介层和所述被动元器件的热胀系数的偏差在预设范围内，所述无机中介层和所述被动元器件的制作工艺具有内似性。Further preferably, the material of the inorganic interposer structure is selected according to the coefficient of thermal expansion of the passive components or the manufacturing process of the passive components. Wherein, the deviation of the coefficient of thermal expansion of the inorganic intermediary layer and the passive component is within a preset range, and the manufacturing process of the inorganic intermediary layer and the passive component has internal similarity.
本发明实施例可以充分利用被动元器件（例如，电容）和无机中介层结构（例如，陶瓷中介层）制造工艺的内似性，以较低成本嵌入被动元器件；被动元器件（例如，电容）和无机中介层结构（例如，陶瓷中介层）可以使用热胀系数相同的材料，不会有应力产生，可靠性不会受影响。基于上述两点，本发明实施例的无机中介层结构可以实现嵌入很多的被动元器件，以增强封装结构电路设计的复杂性。The embodiments of the present invention can make full use of the internal similarity of the manufacturing process of passive components (for example, capacitors) and inorganic interposer structures (for example, ceramic interposers), and embed passive components at a relatively low cost; passive components (for example, capacitors) ) and inorganic interposer structures (for example, ceramic interposer) can use materials with the same thermal expansion coefficient, without stress generation, and reliability will not be affected. Based on the above two points, the inorganic interposer structure of the embodiment of the present invention can realize the embedding of many passive components, so as to enhance the complexity of circuit design of the packaging structure.
本发明实施例优选的所述无机中介层结构为多层结构，所述无机中介层结构的层数根据所述导线的布置和/或所述被动元器件的数量、结构和大小选择。In the preferred embodiment of the present invention, the inorganic interposer structure is a multi-layer structure, and the number of layers of the inorganic interposer structure is selected according to the arrangement of the wires and/or the number, structure and size of the passive components.
优选的，所述无机中介层结构的每层结构上设置有穿孔，用于通过所述穿孔进行对准后，对所述无机中介层结构的多层结构进行烧结。Preferably, each layer structure of the inorganic interposer structure is provided with a perforation, which is used for sintering the multi-layer structure of the inorganic interposer structure after alignment through the perforation.
进一步优选的，所述穿孔为金属穿孔，用于连接所述无机中介层结构的多层结构中的所述导线和所述被动元器件，以实现层与层之间通信。Further preferably, the through holes are metal through holes, used to connect the wires and the passive components in the multilayer structure of the inorganic interposer structure, so as to realize communication between layers.
请参考图2示出的无机中介层结构的制作过程。图2示出了被动元器件（例如，嵌入式电容、嵌入式电感、嵌入式电阻等）嵌入无机中介层结构的制作过程。以示例说明，被动元器件（例如，电容）和中介层介质（无机材料）可一起嵌入在无机中介层结构的多层结构中，通过穿孔（优选为金属穿孔，或称为金属通孔）对准后，通过高温烧结形成完整的无机中介层结构。其中，高温烧结可以根据无机中介层结构的材料和金属穿孔的材料进行选择，一般可以在700℃-1600℃。图2中垂直的虚线即是对准的穿孔，以实现层与层之间通信，该穿孔还可以连接芯片，以实现多芯片之间、芯片与被动元器件之间、以及芯片与外部电路板之间的通信。图2示出了4层的电容、电感、电阻嵌入无机中介层结构，而所述无机中介层结构的层数可以根据所述导线的布置和/或所述被动元器件的数量、结构和大小进行选择。Please refer to the fabrication process of the inorganic interposer structure shown in FIG. 2 . FIG. 2 shows the fabrication process of passive components (eg, embedded capacitors, embedded inductors, embedded resistors, etc.) embedded in the inorganic interposer structure. By way of example, passive components (e.g., capacitors) and interposer dielectrics (inorganic materials) can be embedded together in a multilayer structure of an inorganic interposer structure through vias (preferably metal vias, or metal vias) to the After that, a complete inorganic interposer structure is formed by high-temperature sintering. Among them, the high-temperature sintering can be selected according to the material of the inorganic interposer structure and the material of the metal perforation, and generally can be at 700°C-1600°C. The vertical dotted line in Figure 2 is the aligned perforation to achieve communication between layers, and the perforation can also connect chips to realize between multiple chips, between chips and passive components, and between chips and external circuit boards communication between. Figure 2 shows a 4-layer capacitor, inductance, and resistance embedded in an inorganic interposer structure, and the number of layers of the inorganic interposer structure can be based on the arrangement of the wires and/or the number, structure and size of the passive components. Make a selection.
需要说明，无机中介层结构中的导线制作过程与被动元器件嵌入无机中介层结构的制作过程类似，此处不再赘述。It should be noted that the fabrication process of wires in the inorganic interposer structure is similar to the fabrication process of passive components embedded in the inorganic interposer structure, and will not be repeated here.
图3是本发明实施例提供的无机中介层结构的制作方法的流程示意图；请参考图3，所述无机中介层结构的制作方法可以包括以下步骤：Fig. 3 is a schematic flow chart of a method for manufacturing an inorganic interposer structure provided by an embodiment of the present invention; please refer to Fig. 3, the method for manufacturing an inorganic interposer structure may include the following steps:
步骤S110将导线和被动元器件布置在所述无机中介层结构的至少一层结构上，所述无机中介层结构为多层结构。In step S110, wires and passive components are arranged on at least one layer of the inorganic interposer structure, and the inorganic interposer structure is a multilayer structure.
本发明实施例优选的所述无机中介层结构的材料为陶瓷或玻璃。The preferred material of the inorganic interposer structure in the embodiment of the present invention is ceramic or glass.
本发明实施例优选的所述被动元器件包括电容、电感、电阻和电压调节器等。The preferred passive components in the embodiment of the present invention include capacitors, inductors, resistors, voltage regulators and the like.
优选的，在步骤S110之前，所述中介层结构的制作方法还包括：根据所述导线的布置和/或待嵌入所述无机中介层结构的所述被动元器件的数量、结构和大小，确定所述无机中介层结构的层数。Preferably, before step S110, the manufacturing method of the interposer structure further includes: according to the arrangement of the wires and/or the number, structure and size of the passive components to be embedded in the inorganic interposer structure, determine The number of layers of the inorganic interlayer structure.
优选的，在所述确定所述无机中介层结构的层数之后，所述中介层结构的制作方法还包括：根据所述导线和所述被动元器件在所述中介层结构的多层结构上的布置，在所述无机中介层结构的每层结构上设置穿孔，用于通过所述穿孔进行对准后，对所述无机中介层结构的多层结构进行烧结。Preferably, after the determination of the number of layers of the inorganic interposer structure, the manufacturing method of the interposer structure further includes: arrangement, and a perforation is provided on each layer structure of the inorganic interposer structure, for alignment through the perforation, and then sintering the multilayer structure of the inorganic interposer structure.
本发明实施例优选的所述穿孔为金属穿孔，用于连接所述无机中介层结构的多层结构中的所述导线和所述被动元器件，以实现层与层之间通信。In the embodiment of the present invention, preferably, the through holes are metal through holes, which are used to connect the wires and the passive components in the multilayer structure of the inorganic interposer structure, so as to realize communication between layers.
请参考图2，被动元器件（例如，嵌入式电容、嵌入式电感、嵌入式电阻等）和中介层介质（无机材料）可一起嵌入在无机中介层结构的多层结构中，以通过穿孔（优选为金属穿孔，或称为金属通孔）对准后，通过高温烧结形成完整的无机中介层结构，图2中垂直的虚线即是对准的穿孔，以实现层与层之间通信，该穿孔还可以连接芯片，以实现多芯片之间、芯片与被动元器件之间、以及芯片与外部电路板之间的通信。Referring to Figure 2, passive components (e.g., embedded capacitors, embedded inductors, embedded resistors, etc.) and interposer dielectrics (inorganic materials) can be embedded together in the multilayer structure of the inorganic interposer It is preferably a metal through hole, or called a metal through hole) After alignment, a complete inorganic interposer structure is formed by high-temperature sintering. The vertical dotted line in Figure 2 is the aligned perforation to achieve layer-to-layer communication. Through holes can also connect chips to realize communication between multiple chips, between chips and passive components, and between chips and external circuit boards.
本发明实施例优选的所述无机中介层结构的材料根据所述被动元器件的热胀系数或所述被动元器件的制造工艺进行选择，其中，所述无机中介层和所述被动元器件的热胀系数的偏差在预设范围内，所述无机中介层和所述被动元器件的制作工艺具有内似性。In the preferred embodiment of the present invention, the material of the inorganic interposer structure is selected according to the thermal expansion coefficient of the passive components or the manufacturing process of the passive components, wherein the inorganic interposer and the passive components The deviation of the coefficient of thermal expansion is within a preset range, and the manufacturing process of the inorganic intermediary layer and the passive component has internal similarity.
本发明实施例可以充分利用被动元器件（例如，电容）和无机中介层结构（例如，陶瓷中介层）制造工艺的内似性，以较低成本嵌入被动元器件；被动元器件（例如，电容）和无机中介层结构（例如，陶瓷中介层）可以使用热胀系数相同的材料，不会有应力产生，可靠性不会受影响。基于上述两点，本发明实施例的无机中介层结构可以实现嵌入很多的被动元器件，以增强封装结构电路设计的复杂性。The embodiments of the present invention can make full use of the internal similarity of the manufacturing process of passive components (for example, capacitors) and inorganic interposer structures (for example, ceramic interposers), and embed passive components at a relatively low cost; passive components (for example, capacitors) ) and inorganic interposer structures (for example, ceramic interposer) can use materials with the same thermal expansion coefficient, without stress generation, and reliability will not be affected. Based on the above two points, the inorganic interposer structure of the embodiment of the present invention can realize the embedding of many passive components, so as to enhance the complexity of circuit design of the packaging structure.
步骤S120：连接所述无机中介层结构的每层结构，所述导线用于基于该无机中介层结构进行封装的多芯片之间以及芯片与所述被动元器件之间的电传输。Step S120: Connect each layer of the inorganic interposer structure, and the wires are used for electrical transmission between multiple chips packaged based on the inorganic interposer structure and between chips and the passive components.
承接上述示例，通过高温烧结穿孔，连接无机中介层结构的每层结构，形成完整的无机中介层结构，以实现多芯片之间、芯片与被动元器件之间、以及芯片与外部电路板之间的通信。Following the above example, through high temperature sintering and perforation, each layer structure of the inorganic interposer structure is connected to form a complete inorganic interposer structure, so as to realize the multi-chip, between the chip and passive components, and between the chip and the external circuit board. Communication.
请参考图1，本发明实施例优选的所述无机中介层结构包括线路板和侧壁支撑结构，无机中介层结构的制作方法还包括：连接所述线路板和所述侧壁支撑结构，所述无机中介层结构通过所述线路板和所述侧壁支撑结构构成容纳芯片的空间。Please refer to FIG. 1, the preferred inorganic interposer structure in the embodiment of the present invention includes a circuit board and a sidewall support structure, and the manufacturing method of the inorganic interposer structure further includes: connecting the circuit board and the sidewall support structure, the The inorganic interlayer structure constitutes a space for accommodating chips through the circuit board and the side wall support structure.
以示例说明，分别通过如图2所示的分层制作过程，制作路板和侧壁支撑结构，导线嵌入无机中介层结构的制作过程与被动元器件嵌入无机中介层结构类似。可以在线路板上布置多导线，在侧壁支撑结构内布置被动元器件以及连接穿孔和被动元器件的导线。连接所述线路板和所述侧壁支撑结构，所述无机中介层通过所述线路板和所述侧壁支撑结构构成容纳芯片的空间，既可以实现导线和被动元器件的布局，又可以不限制位于线路板和侧壁支撑结构构成的空间的芯片的高度和大小。To illustrate by way of example, the circuit board and the sidewall support structure are manufactured through the layered manufacturing process as shown in Figure 2, and the manufacturing process of the wire-embedded inorganic interposer structure is similar to that of passive components embedded in the inorganic interposer structure. Multiple wires can be arranged on the circuit board, passive components and wires connecting through-holes and passive components can be arranged in the sidewall support structure. Connecting the circuit board and the side wall support structure, the inorganic interlayer forms a space for accommodating chips through the circuit board and the side wall support structure, which can not only realize the layout of wires and passive components, but also avoid Limit the height and size of the chip in the space formed by the circuit board and the sidewall support structure.
据此，本发明实施例将导线和被动元器件嵌入无机中介层结构中，既可以减少外部电路板（例如，基板上）被动元器件和导线所占空间，还可以使芯片与被动元器件之间的通信距离更近；同时，导线嵌入无机中介层中，而非外接连接线，可以进一步缩短通信距离，保证电器件之间的通信质量，同时导线的布置可以根据多芯片之间通信、芯片与被动元器件之间通信、以及芯片与外部电路板（例如，基板上芯片）通信进行灵活设计，可以增强基于该无机中介层结构形成的封装结构电路设计的复杂性。Accordingly, the embodiment of the present invention embeds wires and passive components into the inorganic interposer structure, which can not only reduce the space occupied by passive components and wires on the external circuit board (for example, on the substrate), but also make the gap between the chip and the passive components The communication distance between them is closer; at the same time, the wires are embedded in the inorganic interposer instead of external connecting wires, which can further shorten the communication distance and ensure the communication quality between electrical devices. Flexible design of communication with passive components, and communication between chips and external circuit boards (eg, chips on substrates) can enhance the complexity of circuit design of packaging structures based on the inorganic interposer structure.
还需要说明的是，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括要素的过程、方法、商品或者设备中还存在另外的相同要素。It should also be noted that the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes Other elements not expressly listed, or elements inherent in the process, method, commodity, or apparatus are also included. Without further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.
以上仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。The above are only examples of the present application, and are not intended to limit the present application. For those skilled in the art, various modifications and changes may occur in this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the scope of the claims of the present application.
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