CN115327869B - Optical material stripping agent - Google Patents
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- CN115327869B CN115327869B CN202210945921.XA CN202210945921A CN115327869B CN 115327869 B CN115327869 B CN 115327869B CN 202210945921 A CN202210945921 A CN 202210945921A CN 115327869 B CN115327869 B CN 115327869B
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- 239000000463 material Substances 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 239000003960 organic solvent Substances 0.000 claims abstract description 32
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims abstract description 18
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 42
- CYMRPDYINXWJFU-UHFFFAOYSA-N 2-carbamoylbenzoic acid Chemical compound NC(=O)C1=CC=CC=C1C(O)=O CYMRPDYINXWJFU-UHFFFAOYSA-N 0.000 claims description 11
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 claims description 11
- 239000012752 auxiliary agent Substances 0.000 claims description 10
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 5
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 4
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 50
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 27
- 230000000694 effects Effects 0.000 abstract description 21
- -1 alcohol amine compound Chemical class 0.000 abstract description 18
- 150000001408 amides Chemical class 0.000 abstract description 11
- 239000002904 solvent Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 7
- 238000004090 dissolution Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- UAUDZVJPLUQNMU-KTKRTIGZSA-N erucamide Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(N)=O UAUDZVJPLUQNMU-KTKRTIGZSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000003223 protective agent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- FATBGEAMYMYZAF-UHFFFAOYSA-N oleicacidamide-heptaglycolether Natural products CCCCCCCCC=CCCCCCCCC(N)=O FATBGEAMYMYZAF-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本申请公开了一种光学材料剥离剂，所述光学材料剥离剂各组分及质量百分比配比为：醇胺类化合物20~25%，剥离助剂10~15%，余量为有机溶剂；所述剥离助剂采用酰胺类溶剂；所述有机溶剂选自N‑甲基毗咯烷酮、哌啶或二乙二醇醚类化合物中的两种或两种以上。本申请稳定性较佳，对液晶显示设备制造过程中使用的各型号的光刻胶的剥离效果均较好，剥离速度较快，而且对金属的腐蚀性极弱，能够有效提高液晶显示设备的制造效率。The present application discloses an optical material stripper, wherein the components and mass percentage ratios of the optical material stripper are: 20-25% of an alcohol amine compound, 10-15% of a stripping aid, and the balance is an organic solvent; the stripping aid is an amide solvent; the organic solvent is selected from two or more of N-methylpyrrolidone, piperidine or diethylene glycol ether compounds. The present application has good stability, good stripping effect on various types of photoresists used in the manufacturing process of liquid crystal display devices, fast stripping speed, and extremely weak corrosion to metals, which can effectively improve the manufacturing efficiency of liquid crystal display devices.
Description
Technical Field
The application relates to the technical field of optical material stripping, in particular to an optical material stripper in optical polarization materials.
Background
The liquid crystal display uses the characteristics of liquid crystal materials to realize the display purpose. The brightness change of the light can be realized by controlling the liquid crystal electric field, so that the aim of accurately displaying information is fulfilled. At present, various liquid crystal display devices have been widely developed and produced and widely applied to various fields, and liquid crystal flat panel displays have been adopted in the current electronic devices such as mobile phones, computers, televisions and the like. In the process of manufacturing flat panel displays, the photolithography process acetonitrile is widely used to etch precise design patterns on substrates. In the process of manufacturing the liquid crystal flat panel display, the photoresist used in the photolithography technique is an organic photoresist.
The photoetching technology is the first choice core technology for processing the fine pattern of the substrate of the liquid crystal flat panel display at present, and comprises the technological processes of film plating, photoresist coating, developing, etching, photoresist stripping and the like. And lift-off refers to a process step of removing the photoresist layer by a lift-off technique after selectively etching to form a precise pattern. The photoresist removing technology is a core step in the processing of the liquid crystal flat panel display substrate, and the quality of stripping directly influences the yield, the final manufacturing cost and the production efficiency of the product. Photoresist removal techniques are classified into wet photoresist removal and dry photoresist removal. Wet photoresist stripping is to remove photoresist on a substrate by dissolving the photoresist using a specific chemical, and dry photoresist stripping is to remove photoresist remaining on the substrate by ashing using a gas such as oxygen in a plasma state called ashing component. Wet photoresist stripping is widely used in the processing of liquid crystal flat panel displays because of its high selectivity, simple process and small damage to the substrate.
The existing photoresist stripping agents are various in types, organic solvents are used as main components, and the photoresist is dissolved and removed by utilizing the solubility of the organic solvents to the photoresist, so that the photoresist has a better application effect in the field of chip etching processing. However, the processing process of the liquid crystal flat panel display is very complex, and the situation that photoresist is stripped at low temperature or at high temperature exists in the processing process of the substrate, and the liquid crystal flat panel display is limited by the operation speed of a processing line, so that the stripping speed is also required to be high. The existing photoresist stripper has insufficient stability under low temperature and/or high temperature conditions, has low stripping speed and is difficult to meet the processing requirement of a liquid crystal flat panel display.
Disclosure of Invention
In order to solve at least one of the technical problems, the application provides the stripping agent for the optical material, which has good stripping effect on various types of photoresist used in the manufacturing process of liquid crystal display equipment, has high stripping speed and extremely weak corrosiveness on metal.
The optical material stripping agent comprises, by mass, 20-25% of alcohol amine compounds, 10-15% of stripping aids and the balance of organic solvents, wherein the stripping aids are amide solvents, and the organic solvents are two or more than two of N-methyl pyrrolidone, piperidine or diethylene glycol ether compounds.
According to the technical scheme, the organic photoresist stripping agent adopts the specific organic solvent and is matched with the alcohol amine compound, so that the organic photoresist stripping agent has a good dissolution stripping effect on various organic photoresists used in the existing liquid crystal flat panel display processing, all organic photoresists used in the liquid crystal flat panel display processing commonly used in the market at present can be stripped through experiments, the amide solvent is added as a stripping auxiliary agent, the dissolution and penetration speed of the photoresist can be effectively improved, the stripping speed is greatly improved, the stripping agent can be guaranteed to have a higher stripping speed under the low temperature and high temperature conditions, the specific organic solvent and the alcohol amine compound are adopted, the amide solvent is added, the components are not reacted at all, the stability at high temperature and low temperature is good, the boiling point is high, and the use environment in the liquid crystal flat panel display processing process can be completely met.
Optionally, the alcohol amine compound is selected from one or more of ethanolamine, diethanolamine or triethanolamine.
By adopting the technical scheme, the dissolution effect on photoresist can be further improved by selecting the specific alcohol amine compound, the boiling point of the stripping agent can be effectively improved, and the high-temperature stability of the stripping agent is ensured.
Optionally, the stripping auxiliary agent is selected from one or two of dimethylacetamide, phthalic acid amide, oleic acid amide and erucic acid amide.
By adopting the technical scheme, the specific stripping auxiliary agent is selected, so that the overall boiling point of the stripping agent can be improved and the high-temperature stability of the stripping agent can be improved while the stripping speed is ensured.
Optionally, the organic solvent comprises N-methyl pyrrolidone, and the mass percentage content of the N-methyl pyrrolidone in the optical material stripping agent is 30-40%.
Further optionally, the organic solvent includes a diethylene glycol ether compound, and the mass percentage content of the diethylene glycol ether compound in the optical material stripper is not less than 25%.
Further alternatively, the diethylene glycol ether compound in the organic solvent is selected from one of diethylene glycol methyl ether and diethylene glycol ethyl ether.
Further alternatively, the organic solvent includes piperidine, and the content of the piperidine in the optical material stripper is not higher than 10% by mass.
By adopting the technical scheme, the organic solvent is further and accurately selected, the proportion of the organic solvent is optimized, the stripping speed can be further and effectively improved, and the stripping speed under the low-temperature or high-temperature conditions is also effectively improved.
Optionally, the optical material stripping agent comprises, by mass, 22-24% of diethanolamine, 10-12% of a stripping auxiliary agent, and the balance of an organic solvent, wherein the organic solvent comprises, by mass, 30-32% of N-methyl pyrrolidone, 30% of diethylene glycol diethyl ether and 4-6% of piperidine.
Further alternatively, the stripping aid is phthalic acid amide or oleic acid amide.
Further alternatively, the mass ratio of the phthalic acid amide to the oleic acid amide is 3:1.
By adopting the technical scheme, the optimal stripping effect can be obtained by adopting the further optimized proportion, the stripping speed of the prepared stripping agent is fastest, the stripping speed at low temperature or high temperature is faster, and the stability at low temperature or high temperature is better.
In summary, the present invention includes at least one of the following beneficial technical effects:
1. The application designs a mixed solvent, adopts a specific organic solvent and is matched with an alcohol amine compound, so that the mixed solvent has better dissolution and stripping effects on various organic photoresists used in the existing liquid crystal flat panel display processing, can strip all organic photoresists used in the liquid crystal flat panel display processing commonly used in the market at present through experiments, has better low-temperature or high-temperature stability of the stripping agent, and can completely meet the use requirements of various severe working conditions of the liquid crystal flat panel display processing.
2. The application adds amide solvent as stripping auxiliary agent, which can be matched with alcohol amine compound to effectively improve the dissolution and penetration speed of photoresist, greatly improve the stripping speed, ensure the stripping agent to have higher stripping speed under the conditions of low temperature and high temperature, and greatly improve the processing efficiency of liquid crystal panel display.
3. The optical stripping agent designed by the application has extremely weak corrosiveness to the metal material and the substrate, can effectively protect the substrate and the metal circuit, and effectively avoid unnecessary damage to the substrate in the stripping process.
4. The optical stripping agent is easy to clean, and can be well cleaned by adopting acetone or ethanol, so that the stripping agent can be effectively prevented from being remained on a substrate.
Detailed Description
The present application will be described in further detail with reference to examples.
The application relates to an optical material stripper, in particular to a photoresist stripper in the processing process of a liquid crystal flat panel display substrate. The optical material stripping agent comprises, by mass, 20-25% of alcohol amine compounds, 10-15% of stripping aids and the balance of organic solvents, wherein the stripping aids are amide solvents, and the organic solvents are two or more than two of N-methyl pyrrolidone, piperidine or diethylene glycol ether compounds.
The stripping agent is very simple to prepare, and the components are uniformly mixed to prepare a mixed solution.
Prior to the present application, existing photoresist strippers have been generally used in the field of microelectronic device processing. Such as chip processing, circuit board manufacturing, etc. The processing of such electronic components is currently generally performed by photolithography, and complicated circuits are etched. In such processing, the stripping of the photoresist does not have too high a requirement on the speed and has a high requirement on the stripping effect. In the processing, the working condition environment is relatively high-quality, the stripping operation is generally carried out at normal temperature, and the working condition environment of low-temperature or high-temperature processing does not exist, so that the stability and the performance of the photoresist stripper at low temperature or high temperature are not excessively high. Meanwhile, due to the processing of electronic components, metal protective agents and other protective agents are usually added into the stripping agents so as to ensure that the stripping agents cannot cause corrosion damage to the substrate and the metal wires during stripping.
The working conditions and environments of the liquid crystal flat panel display are completely different, the used photoresist is slightly different, and the stripping speed of the stripping process is extremely high based on the requirements of productivity and cost. Therefore, when the photoresist stripper used in the processing of the existing electronic components is applied to the processing of the liquid crystal flat panel display, the use effect is extremely unsatisfactory, and the stripping speed and the stability are difficult to meet the requirements. Although photoresist stripping agents specially used for processing liquid crystal flat panel displays exist at present, the design is still based on the photoresist stripping agents used for processing electronic components, and the stripping speed and the high-temperature stability are improved, but the stripping speed under the low-temperature condition is not ideal, the stripping speed is still lower, and a plurality of additives are added, so that the composition is complex, and the preparation cost is higher.
The inventor of the present application found in experiments that, after a specific organic solvent is selected, an alcohol amine compound is added, and an amide solvent is added, the prepared stripping agent can quickly infiltrate the photoresist layer, so that the sol speed is high, and the bonding surface of the photoresist layer and the substrate can be quickly dissolved in a soaking manner, thereby greatly improving the stripping speed. Meanwhile, through experiments, the inventor also finds that the stripping agent has better stability at low temperature or high temperature and also has higher stripping speed.
Based on the above findings, the inventors devised an optical material remover of the present application, which was prepared from an alcohol amine compound, an organic solvent and an amide solvent.
The inventor also finds that the selection and the proportion of each component have great influence on the performance of the stripping agent, and based on experimental research, the stripping agent is prepared by adopting proper proportion mixing.
Optionally, the alcohol amine compound of the present application is preferably one or more selected from ethanolamine, diethanolamine or triethanolamine.
Optionally, the stripping aid of the application is preferably one or two selected from dimethylacetamide, phthalic acid amide, oleic acid amide and erucic acid amide.
The following are examples of the present application and experimental test sections, each of which component materials and photoresists for testing were commercially available.
Examples 1-5, the specific compounding parameters are shown in Table 1 below.
Table 1 examples 1 to 5 proportioning table
The present application takes the best examples of the patents CN111448520A, CN107924144A and CN110597024A as comparative example 1, comparative example 2 and comparative example 3.
Performance test:
the stripping agents of examples 1 to 5 and comparative examples 1 to 3 were respectively subjected to immersion stripping at-5 ℃, 25 ℃ and 85 ℃ on a 5mm thick GA-XL1200 photoresist completely coated on the upper surface of a 5x5cm glass plate, and the stripping time and stripping effect were respectively detected, and simultaneously, the stability of the stripping agent was detected within 72 hours at the above temperatures. The specific results are shown in Table 2. The stripping effect was observed on the surface of the glass plate with a 75-fold magnifying glass to see whether or not there was photoresist residue.
Table 2 test result data table for examples 1 to 5 and comparative example
As can be seen from the data in Table 2, the stripping agent of the present application has significantly faster stripping speed than the existing stripping agent, and has better stripping effect, and no photoresist residue after stripping. Meanwhile, the stripping agent provided by the application has very stable performance at-5 ℃, and still has higher stripping speed and better stripping effect.
As can be seen from the data in Table 2, the present application has a significant improvement in the peeling rate when N-methyl pyrrolidone is used as the organic solvent, whereas the peeling rate is further improved when N-methyl pyrrolidone is used in combination with other organic solvents. And secondly, when the auxiliary agent of the application selects phthalic acid amide and oleic acid amide, the stripping speed is improved compared with other amide auxiliary agents.
The inventors have conducted careful screening of the organic solvent and the stripping aid to obtain a better stripping agent. The following are examples 6 to 10 of the present application, and the same proportions as in example 3 are adopted, except that the selection of the organic solvent and the selection of the peeling auxiliary agent are optimized, specifically as shown in table 3.
Table 3 examples 6 to 10 proportioning table
Based on example 8, propylene glycol was used as a substitute auxiliary as comparative example 4, dimethyl sulfoxide was used as a substitute for N-methyl pyrrolidone as comparative example 5, and tricholine was used as an alkaline substance as a substitute for triethanolamine as comparative example 6, based on example 8.
Performance test:
And respectively carrying out infiltration stripping on the GA-XL1200 photoresist with the thickness of 5mm, which is completely coated on the upper surface of a 5x5cm glass plate, at the temperature of-5 ℃, 25 ℃ and 85 ℃ by using the stripping agents of examples 6-10 and comparative examples 4-6, respectively detecting the stripping time and the stripping effect, and simultaneously detecting the stability of the stripping agent within 72 hours at the temperature. The specific results are shown in Table 4. The stripping effect was observed on the surface of the glass plate with a 75-fold magnifying glass to see whether or not there was photoresist residue.
Table 4 examples 6 to 10 test result data table
As can be seen from the data in Table 4, the stripping rate can be further improved by adopting N-methyl pyrrolidone as the main organic solvent, and the stripping rate is faster by adopting the N-methyl pyrrolidone and other organic solvents for compounding. Meanwhile, the peeling speed of the phthalic acid amide and the oleic acid amide after being compounded is obviously faster than that of the phthalic acid amide or the oleic acid amide which are singly used, and the compound proportion control of the phthalic acid amide and the oleic acid amide has great influence on the peeling speed. As can be seen from the data of comparative examples 6-10 and comparative examples 4-6, the stripping speed is improved based on the synergistic effect of the alcohol amine compound and the amide solvent, and the stripping speed and the low-temperature stripping effect are obviously improved after the alcohol amine compound and the amide solvent are compounded.
The following is examples 11-16 of the present application, the ratio and selection of organic solvents, and the ratio and selection of stripping aids are further optimized, and the selection of alcohol amine compounds is also optimized, specifically shown in table 5.
Table 5 examples 11 to 16 proportion table
Performance test:
the stripping agents of examples 11 to 16 and the stripping agent of comparative example 7 were used as comparative example 7, and a 5mm thick HSQ Fox-15 and domestic KMP D3200 photoresist, which were completely coated on the upper surface of a 5X5cm glass plate, were subjected to immersion stripping at-5℃and 25℃to examine the stripping speed and stripping effect. The specific results are shown in Table 6.
Table 6 examples 11 to 16 test result data table
As can be seen from the data in Table 6, when diethanolamine is selected, N-methyl pyrrolidone, diethylene glycol diethyl ether and piperidine are selected to be compounded into an organic solvent in a specific ratio, and phthalic acid amide and oleamide are simultaneously selected to be compounded into a stripping aid in a ratio of 3:1, the stripping speed and the stripping effect of the application are optimal, and compared with comparative example 7, the stripping speed and the stripping effect of the application are obviously improved. The stripping agent has good stripping effect on photoresist for processing liquid crystal displays of different types.
The above embodiments are not intended to limit the scope of the application, so that the equivalent changes of the structure, shape and principle of the application are covered by the scope of the application.
Claims (1)
1. The optical material stripping agent is characterized by comprising, by mass, 22-24% of diethanolamine, 10-12% of a stripping auxiliary agent and the balance of an organic solvent, wherein the organic solvent comprises N-methylpyrrolidone, piperidine and diethylene glycol diethyl ether, and the mass percentage of each component of the organic solvent in the optical material stripping agent is 30-32% of N-methylpyrrolidone, 30% of diethylene glycol diethyl ether and 4-6% of piperidine;
the stripping auxiliary agent adopts phthalic acid amide and oleic acid amide, and the mass ratio of the phthalic acid amide to the oleic acid amide is 3:1.
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| CN110262199A (en) * | 2019-07-25 | 2019-09-20 | 上海新阳半导体材料股份有限公司 | A kind of negtive photoresist stripper, preparation method and application |
| CN113614647A (en) * | 2019-03-25 | 2021-11-05 | 松下知识产权经营株式会社 | Resist stripping liquid |
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| WO2011037300A1 (en) * | 2009-09-25 | 2011-03-31 | 주식회사 엘지화학 | Photoresist stripper composition and photoresist peeling method employing same |
| CN111999994B (en) * | 2020-08-25 | 2023-08-25 | 福建天甫电子材料有限公司 | Preparation process of electronic-grade TFT photoresist stripping liquid |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113614647A (en) * | 2019-03-25 | 2021-11-05 | 松下知识产权经营株式会社 | Resist stripping liquid |
| CN110262199A (en) * | 2019-07-25 | 2019-09-20 | 上海新阳半导体材料股份有限公司 | A kind of negtive photoresist stripper, preparation method and application |
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