CN115323485B - Epitaxial wavelength uniformity improvement method, system, readable storage medium and computer - Google Patents

Abstract

The present invention provides a method, system, readable storage medium and computer for improving epitaxial wavelength uniformity. The method includes: dividing the epitaxial wafer into a plurality of concentric circle regions with different radii with its center point as the center point; dividing the epitaxial wafer into multiple point sets, and distribute each point set according to the distribution range of each concentric circle area to obtain multiple target areas; calculate the average wavelength of each target area, and calculate the slope of the epitaxial wafer according to the average wavelength; the graphite Repeat the above steps for all epitaxial wafers on the carrier plate to obtain the slope of all epitaxial wafers, divide the graphite carrier plate into multiple circular groove areas according to the distribution of circular grooves, and according to the distribution of epitaxial wafers on each circular groove area and the slope of all epitaxial wafers Calculate the mean value of the slope of each circular groove area; add a warpage coefficient to each circular groove area, and adjust the process parameters of the graphite carrier plate according to the average slope value and warpage coefficient, so as to improve the emission wavelength of all epitaxial wafers on the graphite carrier plate Uniformity.

Description

Epitaxial wavelength uniformity improvement method, system, readable storage medium and computer

technical field

The invention relates to the field of semiconductor technology, in particular to a method, a system, a readable storage medium and a computer for improving epitaxial wavelength uniformity.

Background technique

With the rapid development of the semiconductor industry and the improvement of people's living standards, light-emitting diodes, as a solid-state semiconductor diode light-emitting device, are widely used in lighting fields such as indicator lights and display screens.

In recent years, the research direction of semiconductor devices using GaN-based semiconductor materials has become very mature. LED light-emitting diodes have formed a stable industrial chain. In order to further reduce costs and increase production capacity, the substrate used for LED epitaxial growth has gradually transitioned from 2 inches to 4 inches. , 6 inches, large-size substrates need to ensure good wavelength uniformity within the chip. Therefore, the temperature uniformity of epitaxial growth is required to be higher. The difference in deformation and unevenness of the substrate due to heating requires technicians to adjust the warpage of the epitaxial wafer and the unevenness of the chip source through technological means.

In the prior art, the coverage of the heating wires in each area at the bottom of the graphite carrier plate is inconsistent with the coverage area of each circular groove on the graphite carrier plate, and will be affected by the heating wires in multiple areas, resulting in the heating temperature of the epitaxial wafers in each circular groove Inhomogeneous; the epitaxial wafer has a difference in deformation and unevenness, so that the central area and the edge area of the wafer source are heated unevenly, that is, the dominant wavelength uniformity of the grown epitaxial wafer is poor;

In order to improve the above phenomenon, it is necessary for technicians to judge the unevenness difference by analyzing the difference between the edge and the center in the wavelength spectrum of each epitaxial wafer, and then adjust the warping of the epitaxial wafer through technological means, and adjust the unevenness of the wafer source, so as to improve the wavelength of epitaxial light emission. Uniformity; and it is impossible to accurately judge the unevenness of the chip source artificially, which will lead to deviations in the adjustment through process means, and the wavelength uniformity of the output epitaxial wafer is poor, resulting in the loss of wavelength yield. In addition, in actual industrial production , the production capacity is huge, if each furnace needs to manually adjust the heating area of each circle by analyzing the wavelength spectrum of the output chip source, this will greatly increase the labor cost.

Contents of the invention

Based on this, the object of the present invention is to provide a method, system, readable storage medium and computer for improving epitaxial wavelength uniformity, so as to at least solve the above-mentioned deficiencies in related technologies.

The present invention proposes a method for improving epitaxial wavelength uniformity, comprising the following steps:

Step 1: taking the center of the epitaxial wafer as the center point, and dividing the epitaxial wafer into a plurality of concentric circles with different radii;

Step 2: dividing the epitaxial wafer into a plurality of point sets, and distributing each of the point sets according to the distribution range of each of the concentric circle regions, so as to obtain a plurality of target regions;

Step 3: Calculate the average wavelength of each of the target regions, and calculate the slope of the epitaxial wafer according to the average wavelength of each of the target regions;

Step 4: Repeat the above steps 1 to 3 for all epitaxial wafers on the graphite carrier plate to obtain the slopes of all epitaxial wafers, and divide the graphite carrier plate into a plurality of circular groove areas according to the distribution of circular grooves, and according to each described The distribution of epitaxial wafers on the circular groove area and the slope of all the epitaxial wafers calculate the average value of the slope of each circular groove area;

Step 5: Add warpage coefficients for each of the circular groove areas, and adjust the process parameters of the graphite carrier plate according to the average slope of each of the circular groove areas and the warpage coefficient of each of the circular groove areas, so as to improve the The uniformity of the emission wavelength of all the epitaxial wafers on the above-mentioned graphite carrier disc.

Further, the step of distributing each of the point sets according to the distribution range of each of the concentric circle areas to obtain multiple target areas includes:

Obtaining the distribution coordinates of each of the concentric circle regions and the coordinate positions of each of the point sets;

Each of the point sets is assigned based on the distribution coordinates of each of the concentric circle regions and the coordinate positions of each of the point sets, so as to obtain a plurality of target areas.

Further, the step of calculating the mean wavelength of each target area includes:

Obtaining the independent wavelengths of all the point sets in each of the target areas, and calculating the average wavelength of each of the target areas according to the independent wavelengths of all the point sets in each of the target areas.

Further, the calculation formula of the slope of the epitaxial wafer is:

In the formula, W represents the slope of the epitaxial wafer, R represents the number of concentric circles in the epitaxial wafer, Indicates the mean value of the number of concentric circle regions in the epitaxial wafer, WD represents the wavelength of each concentric circle region in the epitaxial wafer, and WD _R represents the average wavelength of each concentric circle region in the epitaxial wafer.

Further, the calculation formula for adjusting the process parameters of the graphite carrier plate according to the mean value of the slope of each of the circular groove regions and the warpage coefficient of each of the circular groove regions is:

ΔF＝(W ₁ *K ₁ +W ₂ *K ₂ +W ₃ *K ₃ +...+W _x *K _x )*F*C;

In the formula, ΔF represents the adjustment value of the adjustment range of the graphite carrier plate; W _x represents the average slope value of the Xth circular groove area, K _x represents the warpage coefficient corresponding to the Xth circular groove area, X=1, 2, 3,...,x; F represents the adjustment range of the graphite carrier plate, and C represents the compensation coefficient.

The present invention also proposes an epitaxial wavelength uniformity improvement system, including:

The epitaxial wafer dividing module is used to divide the epitaxial wafer into a plurality of concentric circles with different radii with the center of the epitaxial wafer as the center point;

A point set division module, configured to divide the epitaxial wafer into multiple point sets, and distribute each of the point sets according to the distribution range of each of the concentric circle areas, so as to obtain multiple target areas;

a slope calculation module, configured to calculate the average wavelength of each of the target regions, and calculate the slope of the epitaxial wafer according to the average wavelength of each of the target regions;

The carrier plate division module is used to obtain the slope of all epitaxial wafers, and divide the graphite carrier plate into a plurality of circular groove areas according to the circular groove distribution, and according to the distribution of the epitaxial wafers on each of the circular groove areas and the described Calculate the slope mean value of each circular groove area from the slope of all epitaxial wafers;

A parameter optimization module, configured to add a warping coefficient to each of the circular groove areas, and adjust the process parameters of the graphite carrier plate according to the mean value of the slope of each of the circular groove areas and the warping coefficient of each of the circular groove areas, In order to improve the uniformity of the emission wavelengths of all the epitaxial wafers on the graphite carrier disk.

Further, the point set division module includes:

a position acquiring unit, configured to acquire the distribution coordinates of each of the concentric circle regions and the coordinate positions of each of the point sets;

The point set dividing unit is configured to allocate each of the point sets based on the distribution coordinates of the concentric circle areas and the coordinate positions of each of the point sets, so as to obtain a plurality of target areas.

Further, the slope calculation module includes:

The slope calculation unit is configured to obtain the independent wavelengths of all point sets in each target area, and calculate the average wavelength of each target area according to the independent wavelengths of all point sets in each target area.

The present invention also proposes a readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the above-mentioned method for improving epitaxial wavelength uniformity is realized.

The present invention also proposes a computer, including a memory, a processor, and a computer program stored on the memory and operable on the processor, and the above-mentioned epitaxial wavelength uniformity is realized when the processor executes the computer program Lift method.

Compared with the prior art, the beneficial effect of the present invention is: the epitaxial wafer is divided into a plurality of concentric circle areas, and it is divided into a plurality of point sets, and then the epitaxial wafer is obtained according to each point set and each concentric circle area. Slope, through the slope, it can more accurately show the unevenness of the epitaxial wafer source, effectively reduce the time for personnel to analyze the wavelength spectrum, reduce labor costs, and adjust the warpage of the wafer source through more intuitive and accurate process means, and reduce the unevenness of the wafer source. The property is adjusted to the best, so that each part of the wafer source is heated evenly, and the wavelength uniformity of the output epitaxial wafer is improved; the graphite carrier plate is divided into multiple circular groove areas, and the circular slots are calculated according to the slope of each epitaxial wafer. The mean value of the slope of the groove area, by adding the warping coefficient, avoids the problem of excessive adjustment deviation of the process means after the average wavelength of the area is abnormally long or short caused by the abnormally long or short wavelength of individual point sets.

Description of drawings

FIG. 1 is a flowchart of a method for improving epitaxial wavelength uniformity in the first embodiment of the present invention;

Fig. 2 is a detailed flowchart of step S102 in Fig. 1;

3 is a schematic diagram of a single epitaxial wafer dispersed into multiple point sets in the first embodiment of the present invention;

Fig. 4 is the detailed flowchart of step S103 in Fig. 1;

Fig. 5 is a schematic diagram of the wavelength of each point set of the epitaxial wafer in the first embodiment of the present invention;

Fig. 6 is a schematic diagram of the division of the epitaxial wafer into a plurality of concentric circle regions in the first embodiment of the present invention;

7 is a structural block diagram of a system for improving epitaxial wavelength uniformity in the second embodiment of the present invention;

Fig. 8 is a structural block diagram of a computer in the third embodiment of the present invention.

Description of main component symbols:

memory 10 Point set division module 12 processor 20 Slope Calculation Module 13 Computer program 30 Carrier division module 14 Epiwafer division module 11 Parameter Optimization Module 15

The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

Detailed ways

In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Embodiment one

Please refer to FIG. 1, which shows a method for improving epitaxial wavelength uniformity in the first embodiment of the present invention, and the method specifically includes steps S101 to S105:

S101, dividing the epitaxial wafer into a plurality of concentric circle regions with different radii with the center point of the epitaxial wafer as the center point;

During specific implementation, when measuring the Y (Y>=1) chip sources produced by each furnace of the graphite carrier plate, each epitaxial wafer is centered on its center point, and all epitaxial wafers are divided into R (in In this embodiment, there are 3<R<50) concentric circle regions with different radii. In this embodiment, the substrate material used in the production of the epitaxial wafer is any one of sapphire, silicon and silicon carbide.

S102, dividing the epitaxial wafer into multiple point sets, and distributing each of the point sets according to the distribution range of each of the concentric circle areas, so as to obtain multiple target areas;

Further, please refer to FIG. 2, the step S102 specifically includes steps S1021-S1022:

S1021. Obtain the distribution coordinates of each of the concentric circle regions and the coordinate positions of each of the point sets;

S1022. Assign each of the point sets based on the distribution coordinates of each of the concentric circle areas and the coordinate positions of each of the point sets, so as to obtain multiple target areas.

During specific implementation, referring to Fig. 3, all the above-mentioned epitaxial wafers are divided into N (N>=2) point sets, each point set contains a specific coordinate position and independent wavelength WD _N , utilizes the above-mentioned The coordinate position and the distribution coordinates of each concentric circle area of the epitaxial wafer are allocated to all point sets, and each concentric circle area will obtain a part of point set n, satisfying: n ₁ +n ₂ +...+n _R =N, and then Ability to obtain multiple target areas on each epiwafer;

It can be understood that by dividing the epitaxial wafer into a plurality of concentric circle areas, and dividing it into a plurality of corresponding target areas according to all point sets of the epitaxial wafer, the correlation between the point set of the target area and the corresponding area is further strengthened .

S103, calculating the average wavelength of each of the target areas, and calculating the slope of the epitaxial wafer according to the average wavelength of each of the target areas;

Further, please refer to FIG. 4 , the step of calculating the average wavelength of each of the target areas in the step S103 specifically includes step S1031:

S1031. Acquire independent wavelengths of all point sets in each of the target areas, and calculate an average wavelength of each of the target areas according to the independent wavelengths of all point sets in each of the target areas.

In the specific implementation, please refer to Fig. 5 to Fig. 6, each of the above-mentioned point sets contains an independent wavelength WD _N , and the point set of the target area is calculated according to the independent wavelength WD _N of the point set in the target area Mean wavelength WD _R , obtain the number R of the concentric circle regions of the epitaxial wafer and each n _R point sets of each R circle area, according to the number R of the concentric circle regions of the epitaxial wafer and the point sets of all target regions on the epitaxial wafer Average wavelength WD _R , calculate the slope of the epitaxial wafer according to the following formula:

In the formula, W represents the slope of the epitaxial wafer, R represents the number of concentric circles in the epitaxial wafer, Indicates the mean value of the number of concentric circle regions in the epitaxial wafer, WD represents the wavelength of each concentric circle region in the epitaxial wafer, and WD _R represents the average wavelength of each concentric circle region in the epitaxial wafer.

It can be understood that the slope of the epitaxial wafer can reflect the concave-convex data of the epitaxial wafer. When the slope is greater than 0, it means that the epitaxial wafer is concave. When the slope is less than 0, it means that the epitaxial wafer is convex. When the slope is 0 , which means that the epitaxial wafer has the best uniformity and tends to be flat.

S104, cycle all the epitaxial wafers on the graphite carrier disk from the above steps S101 to step S103 to obtain the slopes of all the epitaxial wafers, and divide the graphite carrier disk into a plurality of circular groove areas according to the circular groove distribution, and according to each described The distribution of epitaxial wafers on the circular groove area and the slope of all the epitaxial wafers calculate the average value of the slope of each circular groove area;

In the specific implementation, all the epitaxial sheets on the graphite carrier plate are all according to the above steps to obtain the slope of all the epitaxial sheets, and the graphite carrier plate is divided into X (2≤X≤20) circles according to the distribution of circular grooves Slot area, it can be understood that a plurality of epitaxial wafers will be distributed on each circular slot area, and the distribution of the epitaxial wafers on each of the circular slot areas and the slope of all the above-mentioned epitaxial wafers are calculated. Slope mean W _X .

It should be noted that due to the difference in the heating area in each circular groove area, it needs to be adjusted by technological means so that the warpage of the epitaxial wafer meets the requirements, and the value of the technological parameter of the adjusted technological means is F (in this embodiment, the process The means is the growth time. In other embodiments, the process means can also be some process means that can adjust the warpage of the epitaxial wafer, such as the amount of Ga source. The process means are different, and the corresponding process parameter values are also different).

S105, adding a warping coefficient to each of the circular groove areas, and adjusting the process parameters of the graphite carrier plate according to the average slope value of each of the circular groove areas and the warping coefficient of each of the circular groove areas, so as to improve the Uniformity of emission wavelength across all epiwafers on a graphite susceptor.

In specific implementation, warping coefficient K is added to each circular groove area, satisfying k ₁ +k ₂ +k ₃ +...+k _X =1, where k ₁ is the warping coefficient of the first circular groove area , k ₂ is the warping coefficient of the second circle of circular groove area. According to the average value of the slope of each circular groove area obtained above and its corresponding warpage coefficient, adjust the process parameters of the graphite carrier plate according to the following formula, so as to improve the uniformity of the light emission wavelength of all epitaxial wafers on the graphite carrier plate:

ΔF＝(W ₁ *K ₁ +W ₂ *K ₂ +W ₃ *K ₃ +...+W _x *K _x )*F*C;

In the formula, ΔF represents the adjustment value of the adjustment range of the graphite carrier plate; W _x represents the average slope value of the Xth circular groove area, K _x represents the warpage coefficient corresponding to the Xth circular groove area, X=1, 2, 3,...,x; F represents the adjustment range of the graphite carrier plate, and C represents the compensation coefficient.

It should be noted that, due to consideration of the actual production, the substrate material and quality used in the production of epitaxial wafers will fluctuate, and the differences between machines, etc., so a compensation coefficient will be added when adjusting the warpage in the overall process C, thereby reducing the influence of other factors on the epitaxial wafer.

To sum up, the epitaxial wavelength uniformity improvement method in the above-mentioned embodiments of the present invention divides the epitaxial wafer into a plurality of concentric circle regions, and divides it into a plurality of point sets, and then obtains the The slope of the epitaxial wafer shows the concavity and convexity of the epitaxial wafer source more accurately through the slope, effectively reducing the time for personnel to analyze the wavelength spectrum, reducing labor costs, and adjusting the warp of the wafer source through more intuitive and accurate technological means. The unevenness of the source is adjusted to the best, so that each part of the source is heated evenly, and the wavelength uniformity of the output epitaxial wafer is improved; the graphite carrier plate is divided into multiple circular groove areas, and calculated according to the slope of each epitaxial wafer The average value of the slope of each circular groove area is calculated, and the warping coefficient is added to avoid the problem that the average wavelength of the area is abnormally long or short due to the abnormally long or short wavelength of individual point sets. After the process adjustment deviation is too large.

Embodiment two

Another aspect of the present invention also proposes an epitaxial wavelength uniformity improvement system, please refer to Figure 7, which shows the epitaxial wavelength uniformity improvement system in the second embodiment of the present invention, including:

The epitaxial wafer dividing module 11 is used to divide the epitaxial wafer into a plurality of concentric circles with different radii with the center of the epitaxial wafer as the center point;

A point set division module 12, configured to divide the epitaxial wafer into a plurality of point sets, and distribute each of the point sets according to the distribution range of each of the concentric circle areas, so as to obtain a plurality of target areas;

Further, the point set division module 12 includes:

a position acquiring unit, configured to acquire the distribution coordinates of each of the concentric circle regions and the coordinate positions of each of the point sets;

The point set dividing unit is configured to allocate each of the point sets based on the distribution coordinates of the concentric circle areas and the coordinate positions of each of the point sets, so as to obtain a plurality of target areas.

The slope calculation module 13 is used to calculate the average wavelength of each of the target regions, and calculate the slope of the epitaxial wafer according to the average wavelength of each of the target regions;

Further, the slope calculation module 13 includes:

The slope calculation unit is configured to obtain the independent wavelengths of all point sets in each target area, and calculate the average wavelength of each target area according to the independent wavelengths of all point sets in each target area.

Carrier plate dividing module 14, used to obtain the slope of all epitaxial wafers, and divide the graphite carrier plate into a plurality of circular groove areas according to the distribution of circular grooves, and according to the distribution of epitaxial wafers on each of the circular groove areas and the Calculate the slope mean value of each of the circular groove regions by calculating the slope of all the above-mentioned epitaxial wafers;

The parameter optimization module 15 is used to add warpage coefficients for each of the circular groove areas, and adjust the process parameters of the graphite carrier plate according to the average value of the slope of each of the circular groove areas and the warpage coefficient of each of the circular groove areas , so as to improve the uniformity of the emission wavelengths of all the epitaxial wafers on the graphite carrier disk.

The functions or operation steps realized by the above-mentioned modules and units when executed are substantially the same as those of the above-mentioned method embodiments, and will not be repeated here.

The implementation principle and technical effects of the epitaxial wavelength uniformity improvement system provided by the embodiments of the present invention are the same as those of the aforementioned method embodiments. For a brief description, the parts not mentioned in the device embodiments can refer to the aforementioned method embodiments. Corresponding content.

Embodiment Three

The present invention also proposes a computer, please refer to FIG. 8 , which shows a computer in the third embodiment of the present invention, including a memory 10, a processor 20, and a computer stored on the memory 10 and can be stored on the processor 20. Running computer program 30 , when the processor 20 executes the computer program 30 , the above-mentioned method for improving epitaxial wavelength uniformity is realized.

Wherein, the memory 10 includes at least one type of readable storage medium, and the readable storage medium includes flash memory, hard disk, multimedia card, card-type memory (eg, SD or DX memory, etc.), magnetic memory, magnetic disk, optical disk, etc. Memory 10 may in some embodiments be an internal storage unit of a computer, such as a hard disk of the computer. In other embodiments, the memory 10 may also be an external storage device, such as a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash memory card (Flash Card) and the like. Further, the memory 10 may also include both an internal storage unit of the computer and an external storage device. The memory 10 can be used not only to store application software and various data installed in the computer, but also to temporarily store data that has been output or will be output.

Wherein, the processor 20 in some embodiments may be an electronic control unit (Electronic Control Unit, referred to as ECU, also known as a trip computer), a central processing unit (Central Processing Unit, CPU), a controller, a microcontroller, a microprocessor or Other data processing chips are used to run the program codes stored in the memory 10 or process data, such as executing access restriction programs and the like.

It should be noted that the structure shown in FIG. 8 does not constitute a limitation on the computer. In other embodiments, the computer may include fewer or more components than those shown in the figure, or combine certain components, or different components layout.

Embodiments of the present invention also provide a readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, the method for improving epitaxial wavelength uniformity as described above is implemented.

Those skilled in the art will understand that the logic and/or steps shown in the flowchart or described in other ways herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, which can be specifically implemented in in any computer-readable storage medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other systems that can fetch and execute instructions from an instruction execution system, apparatus, or device), Or used in combination with these instruction execution systems, devices or equipment. For the purpose of this specification, a "computer-readable storage medium" may be any device that can contain, store, communicate, propagate or transmit programs for instruction execution systems, devices or devices or for use in conjunction with these instruction execution systems, devices or devices .

More specific examples (non-exhaustive list) of computer-readable storage media include the following: electrical connection with one or more wires (electronic device), portable computer disk case (magnetic device), random access memory (RAM) , read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable compact disc read-only memory (CDROM). In addition, the computer-readable storage medium may even be paper or other suitable readable storage medium on which the program can be printed, since it may be possible, for example, by optically scanning the paper or other readable storage medium, followed by editing, decoding, etc. The program may be obtained electronically by translating or otherwise processing as necessary and then storing it in a computer memory.

It should be understood that various parts of the present invention can be realized by hardware, software, firmware or their combination. In the embodiments described above, various steps or methods may be implemented by software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented by any one or combination of the following techniques known in the art: Discrete logic circuits, ASICs with suitable combinational logic gates, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.

The above-mentioned embodiments only represent several implementation modes of the present application, and the description thereof is relatively specific and detailed, but it should not be construed as limiting the scope of the patent for the invention. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the scope of protection of the patent application should be based on the appended claims.

Claims (8)

1. The epitaxial wavelength uniformity improving method is characterized by comprising the following steps of:

step one: dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;

step two: dividing the epitaxial wafer into a plurality of point sets, and distributing the point sets according to the distribution range of the concentric circle regions to obtain a plurality of target regions;

step three: calculating the average wavelength of each target area, and calculating the slope of the epitaxial wafer according to the average wavelength of each target area, wherein the calculation formula of the slope of the epitaxial wafer is as follows:

；

in the method, in the process of the invention,represents the slope of epitaxial wafer, +.>Indicating the number of concentric areas in the epitaxial wafer, < >>Mean value of the number of concentric circle regions in the epitaxial wafer, +.>Wavelength of each concentric region in the epitaxial wafer, </i >>Mean wavelength of each concentric circle region in the epitaxial wafer is represented;

step four: cycling all epitaxial wafers on a graphite bearing disc to obtain slopes of all epitaxial wafers, dividing the graphite bearing disc into a plurality of circular groove areas according to circular groove distribution, and calculating slope average values of the circular groove areas according to distribution conditions of epitaxial wafers on the circular groove areas and the slopes of all epitaxial wafers;

step five: adding a warping coefficient to each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region to improve the uniformity of the luminescence wavelength of all epitaxial wafers on the graphite bearing disc, wherein the calculation formula of the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region is as follows:

；

in the method, in the process of the invention,an adjustment value representing an adjustment amplitude of the graphite carrier; />Represents the slope mean of the X-th circular groove region, < >>Representing the warp coefficient corresponding to the xth circular groove region, x=1, 2,3, …, X; f represents the adjustment amplitude of the graphite bearing disc, and C represents the compensation coefficient.

2. The epitaxial wavelength uniformity improvement method according to claim 1, wherein the step of distributing each of the point sets in accordance with the distribution range of each of the concentric circle regions to obtain a plurality of target regions comprises:

acquiring the distribution coordinates of each concentric circle region and the coordinate positions of each point set;

and distributing the point sets based on the distribution coordinates of the concentric circle regions and the coordinate positions of the point sets to obtain a plurality of target regions.

3. The method of claim 1, wherein the step of calculating the mean wavelength of each of the target regions comprises:

and obtaining independent wavelengths of all the point sets in each target area, and calculating the mean wavelength of each target area according to the independent wavelengths of all the point sets in each target area.

4. An epitaxial wavelength uniformity promotion system, comprising:

the epitaxial wafer dividing module is used for dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;

the point set dividing module is used for dividing the epitaxial wafer into a plurality of point sets and distributing the point sets according to the distribution range of the concentric circle areas to obtain a plurality of target areas;

the slope calculation module is used for calculating the average wavelength of each target area and calculating the slope of the epitaxial wafer according to the average wavelength of each target area, wherein the calculation formula of the slope of the epitaxial wafer is as follows:

；

in the method, in the process of the invention,represents the slope of epitaxial wafer, +.>Indicating the number of concentric areas in the epitaxial wafer, < >>Mean value of the number of concentric circle regions in the epitaxial wafer, +.>Wavelength of each concentric region in the epitaxial wafer, </i >>Mean wavelength of each concentric circle region in the epitaxial wafer is represented;

the graphite carrying disc dividing module is used for obtaining the slopes of all epitaxial wafers, dividing the graphite carrying disc into a plurality of circular groove areas according to the circular groove distribution, and calculating the average value of the slopes of all the circular groove areas according to the distribution condition of epitaxial wafers on all the circular groove areas and the slopes of all the epitaxial wafers;

the parameter optimization module is used for adding a warping coefficient to each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region so as to improve the uniformity of the luminescence wavelength of all epitaxial wafers on the graphite bearing disc, wherein the calculation formula for adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region is as follows:

；

in the method, in the process of the invention,an adjustment value representing an adjustment amplitude of the graphite carrier; />Represents the slope mean of the X-th circular groove region, < >>Representing the warp coefficient corresponding to the xth circular groove region, x=1, 2,3, …, X; f represents the adjustment amplitude of the graphite bearing disc, and C represents the compensation coefficient.

5. The epitaxial wavelength uniformity promotion system of claim 4, wherein the point set partitioning module comprises:

a position acquisition unit configured to acquire distribution coordinates of each of the concentric circle regions and coordinate positions of each of the point sets;

and the point set dividing unit is used for distributing the point sets based on the distribution coordinates of the concentric circle areas and the coordinate positions of the point sets so as to obtain a plurality of target areas.

6. The epitaxial wavelength uniformity promotion system of claim 4, wherein the slope calculation module comprises:

the slope calculation unit is used for obtaining independent wavelengths of all point sets in each target area and calculating average wavelength of each target area according to the independent wavelengths of all point sets in each target area.

7. A readable storage medium having stored thereon a computer program, which when executed by a processor implements the epitaxial wavelength uniformity improvement method according to any one of claims 1 to 3.

8. A computer comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor implements the epitaxial wavelength uniformity improvement method of any one of claims 1 to 3 when the computer program is executed by the processor.