CN115313044B - An isolation-enhanced millimeter-wave dual-frequency dual-polarization antenna - Google Patents
An isolation-enhanced millimeter-wave dual-frequency dual-polarization antenna Download PDFInfo
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- CN115313044B CN115313044B CN202210571302.9A CN202210571302A CN115313044B CN 115313044 B CN115313044 B CN 115313044B CN 202210571302 A CN202210571302 A CN 202210571302A CN 115313044 B CN115313044 B CN 115313044B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
- H01Q1/525—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between emitting and receiving antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/24—Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
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Abstract
本发明公开了一种隔离增强型毫米波双频双极化天线。所述天线中，第一环形金属贴片和多个金属柱共同组成隔离装置；在低频段，隔离装置具有带阻特性，将输入信号反射回端口，有效地的提高了低频端口间的隔离；在高频段，通过隔离装置的多个金属柱上电流反相相互抵消有效地降低两端口间的隔离，同时还降低第二环形金属贴片对端口的耦合作用；所以，该隔离装置在两个频段都具有增强隔离的作用。本发明天线单元具有结构简单、体积小、双频、双极化和高隔离的特性，能够满足应用于24GHz‑29GHz和37GHz‑50GHz的5G毫米波宽带高速无线通讯系统的要求。
The present invention discloses an isolation-enhanced millimeter-wave dual-frequency dual-polarization antenna. In the antenna, a first annular metal patch and a plurality of metal pillars together constitute an isolation device; in the low frequency band, the isolation device has a band-stop characteristic, reflects the input signal back to the port, and effectively improves the isolation between the low-frequency ports; in the high frequency band, the currents on the multiple metal pillars of the isolation device are reversed and canceled to effectively reduce the isolation between the two ports, while also reducing the coupling effect of the second annular metal patch on the port; therefore, the isolation device has the effect of enhancing isolation in both frequency bands. The antenna unit of the present invention has the characteristics of simple structure, small size, dual frequency, dual polarization and high isolation, and can meet the requirements of 5G millimeter-wave broadband high-speed wireless communication systems applied to 24GHz-29GHz and 37GHz-50GHz.
Description
Technical Field
The invention relates to the field of millimeter wave antennas, in particular to an isolation enhanced dual-frequency dual-polarized antenna applied to millimeter waves.
Background
With commercial 5G massive coverage and the upcoming of 6G, millimeter waves have attracted attention from many scholars as a key technology therein. Millimeter waves have rich spectrum resources and extremely fast response times, but the spatial loss of millimeter waves is large. In view of these challenges, millimeter wave antennas are required to have dual polarization, miniaturization, high gain, and broadband/dual frequency performance. Dual polarized patch antennas have the characteristics of a ground profile and a simple structure, but isolation between ports is generally poor, which may lead to a decrease in antenna gain. Therefore, the millimeter wave dual-frequency dual-polarized antenna with high isolation has very important significance.
The prior art has been investigated and understood as follows:
In the journal of 2021, "IEEE ACCESS", yuqi He, publication "A Compact Dual-Band and Dual-Polarized Millimeter-Wave Beam Scanning Antenna Array for 5G Mobile Terminals" proposes a miniaturized dual-band dual-polarized antenna unit and array for 5G millimeter wave beam scanning, wherein the antenna unit uses a dual-layer patch to realize dual frequencies, the bandwidths are 24.2-27.7GHz and 36.2-43.8GHz, the isolation of the low-frequency port is greater than 17dB, and the isolation of the high-frequency port is greater than 10dB. The antenna cannot cover the 5G millimeter wave frequency band, and the isolation between ports is poor, so that the port isolation of the antenna unit needs to be further improved.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides an isolation enhanced millimeter wave dual-frequency dual-polarized antenna. The antenna realizes double frequency bands through the double-ring patch antenna of L-shaped branch coupling feed, and the isolation between ports is improved by using the novel three-dimensional isolation device. The antenna simultaneously realizes the characteristics of miniaturization, double frequency, dual polarization and high isolation.
The object of the invention is achieved by at least one of the following technical solutions.
An isolation enhanced millimeter wave dual-frequency dual-polarized antenna comprises a first dielectric substrate, a second dielectric substrate and a third dielectric substrate;
The metal substrate is arranged on the lower surface of the first medium substrate, and the first metal branch, the second metal branch and the first annular metal patch are arranged on the upper surface of the first medium substrate;
The second dielectric substrate is positioned below the third dielectric substrate, and the upper surface of the second dielectric substrate is provided with a second annular metal patch;
The first dielectric substrate is internally provided with a first metal probe, a second metal probe and a plurality of metal columns, wherein the first metal probe passes through the first dielectric substrate to be connected with a first metal branch joint and a metal substrate;
the isolation device comprises a first annular metal patch and a plurality of metal columns, wherein the isolation device is provided with a band-stop characteristic, an input signal is reflected to a port in a low frequency band, isolation between low frequency ports is effectively improved, and in a high frequency band, isolation between two ports is effectively reduced by mutual offset of current opposite phases on the plurality of metal columns of the isolation device, and meanwhile coupling effect of a second annular metal patch to the ports is reduced.
Further, the first metal branch and the second metal branch are respectively located on two diagonal extension lines of the first annular metal patch, and no contact exists among the first metal branch, the second metal branch and the first annular metal patch.
Further, the first annular metal patch, the second annular metal patch and the third annular metal patch are respectively positioned at the centers of the upper surfaces of the first dielectric substrate, the second dielectric substrate and the third dielectric substrate.
Further, the materials of the first dielectric substrate, the second dielectric substrate and the third dielectric substrate are RO4003C.
Further, the first metal branch and the first metal probe form a group of L-shaped feed structures, the second metal branch and the second metal probe form a group of L-shaped feed structures, and the two groups of L-shaped feed structures carry out coupling feed on the second annular metal patch and the third annular metal patch.
Further, the second annular metal patch and the third annular metal patch are both in the shape of a centrally symmetrical ring, including a circular ring and a polygonal ring.
Further, the outer ring of the third annular metal patch is larger than the outer ring of the second annular metal patch.
Further, the shape of the first annular metal patch includes a circular ring and a polygonal ring.
Further, the number of the metal posts is 2 or more.
Further, the metal columns are arranged in the center of the first dielectric substrate in a central symmetry arrangement mode.
Compared with the prior art, the invention has the following beneficial effects:
1. Compared with the existing millimeter wave dual-polarized dual-frequency antenna, the antenna unit of the invention carries out coupling feed on the dual-annular patch through the L-shaped branches, thereby realizing dual-frequency and miniaturization at the same time.
2. Compared with the existing millimeter wave dual-polarized dual-frequency antenna, the antenna unit is arranged below the annular patch by utilizing the three-dimensional structure device, does not occupy extra volume, and improves the port isolation of dual frequencies.
Drawings
Fig. 1 is a front view of an antenna unit according to example 1 of the present invention.
Fig. 2 is a top view of an antenna unit according to example 1 of the present invention.
Fig. 3 is a top view of an antenna unit according to example 2 of the present invention.
Fig. 4 is a top view of an antenna unit according to example 3 of the present invention.
Fig. 5 is a schematic diagram of S-parameter simulation results of an antenna unit according to example 1 of the present invention.
Fig. 6 is a graph of isolation results before and after isolation of an antenna element according to example 1 of the present invention.
Fig. 7 is a schematic diagram of the radiation pattern simulation result of the antenna unit +45° polarization at 25GHz and phi=45° according to example 1 of the present invention.
Fig. 8 is a schematic diagram of the radiation pattern simulation result of the antenna element +45° polarization at 27GHz and phi=45° according to example 1 of the present invention.
Fig. 9 is a schematic diagram of the radiation pattern simulation result of the antenna element +45° polarization at 40GHz, phi=45° according to example 1 of the present invention.
Fig. 10 is a schematic diagram of the radiation pattern simulation result of the antenna unit +45° polarization at 45GHz, phi=45° according to example 1 of the present invention.
Fig. 11 is a schematic diagram of S-parameter simulation results of an antenna unit according to example 2 of the present invention.
Fig. 12 is a schematic diagram of the radiation pattern simulation result of the antenna element +45° polarization at 25GHz, phi=45° according to example 2 of the present invention.
Fig. 13 is a schematic diagram of the radiation pattern simulation result of the antenna element +45° polarization at 27GHz and phi=45° according to example 2 of the present invention.
Fig. 14 is a schematic diagram showing the simulation result of the radiation pattern polarized at 40GHz and phi=45° for the antenna unit +45° of example 2 of the present invention.
Fig. 15 is a schematic diagram of the radiation pattern simulation result of the antenna element +45° polarization at 45GHz, phi=45° according to example 2 of the present invention.
Fig. 16 is a schematic diagram of S-parameter simulation results of an antenna unit according to example 3 of the present invention.
Fig. 17 is a schematic diagram of the radiation pattern simulation result of the antenna element +45° polarization at 25GHz, phi=45° according to example 3 of the present invention.
Fig. 18 is a schematic diagram showing the simulation result of the radiation pattern polarized at 27GHz and phi=45° for the antenna unit +45° in example 3 of the present invention.
Fig. 19 is a schematic diagram showing the simulation result of the radiation pattern polarized at 40GHz and phi=45° for the antenna unit +45° in example 3 of the present invention.
Fig. 20 is a schematic diagram showing the simulation result of the radiation pattern polarized at 45GHz and phi=45° for the antenna unit +45° in example 3 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but embodiments of the present invention are not limited thereto.
Example 1:
as shown in fig. 1 and 2, the isolation enhanced millimeter wave dual-frequency dual-polarized antenna comprises a first dielectric substrate a, a second dielectric substrate b and a third dielectric substrate c;
the metal substrate 4 is arranged on the lower surface of the first medium substrate a, and the first metal branch 5a, the second metal branch 5b and the first annular metal patch 1 are arranged on the upper surface of the first medium substrate a;
The second dielectric substrate b is positioned below the third dielectric substrate c, and the upper surface of the second dielectric substrate b is provided with a second annular metal patch 2;
in the embodiment, the number of the metal posts is 4, a first dielectric substrate a is provided with a first metal probe 6a, a second metal probe 6b, a first metal post 7a, a second metal post 7b, a third metal post 7c and a fourth metal post 7d, the first metal probe 6a passes through the first dielectric substrate a to be connected with a first metal branch 5a and the metal substrate 4, the second metal probe 6b passes through the first dielectric substrate a to be connected with a second metal branch 5b and the metal substrate 4, and the first metal post 7a, the second metal post 7b, the third metal post 7c and the fourth metal post 7d all pass through the first dielectric substrate a to be connected with a first annular metal patch 1 and the metal substrate 4;
In order to improve the isolation of the ports of the antenna unit, the first annular metal patch 1, the first metal column 7a, the second metal column 7b, the third metal column 7c and the fourth metal column 7d form a three-dimensional isolation device together, the isolation device has a band-stop characteristic in a low frequency band, an input signal is reflected to the ports, the isolation between the low frequency ports is effectively improved, and in a high frequency band, the isolation between the two ports is effectively reduced by mutual offset of current opposition on the first metal column 7a, the second metal column 7b, the third metal column 7c and the fourth metal column 7d of the isolation device, and meanwhile, the coupling effect of the second annular metal patch 2 on the ports is also reduced.
The first metal branch 5a and the second metal branch 5b are respectively positioned on two diagonal extension lines of the first annular metal patch 1, and the first metal branch 5a, the second metal branch 5b and the first annular metal patch 1 are in no contact;
the first annular metal patch 1, the second annular metal patch 2 and the third annular metal patch 3 are respectively positioned at the centers of the upper surfaces of the first dielectric substrate a, the second dielectric substrate b and the third dielectric substrate c.
In this embodiment, the materials of the first dielectric substrate a, the second dielectric substrate b and the third dielectric substrate C are RO4003C, the relative dielectric constant is 3.38, and the loss tangent is 0.0027.
In this embodiment, the first metal branch 5a and the first metal probe 6a form a group of L-shaped feeding structures, the second metal branch 5b and the second metal probe 6b form a group of L-shaped feeding structures, and the two groups of L-shaped feeding structures perform coupling feeding on the second annular metal patch 2 and the third annular metal patch 3. The size of the third annular metal patch 3 mainly determines the resonance point of the low frequency, and the second annular metal patch 2 mainly determines the resonance point of the low frequency.
In this embodiment, the second annular metal patch 2 and the third annular metal patch 3 are both square in shape. The outer ring of the third annular metal patch 3 is larger than the outer ring of the second annular metal patch 2.
In this embodiment, the first annular metal patch 1 has a square ring shape.
In this embodiment, the first metal pillar 7a, the second metal pillar 7b, the third metal pillar 7c, and the fourth metal pillar 7d are arranged in a central symmetry manner at the center of the first dielectric substrate a.
Through HFSS software simulation, verification simulation is carried out on the isolation enhanced millimeter wave dual-frequency dual-polarized antenna of the embodiment, and in the embodiment, the size of the isolation enhanced millimeter wave dual-frequency dual-polarized antenna unit is 2mm multiplied by 1.32mm. As shown in fig. 5, an S-parameter simulation result diagram of the isolation enhanced millimeter wave dual-frequency dual-polarized antenna is given. The working frequency bands of the antenna unit are 23.84GHz-29.32GHz and 36.88GHz-50.00GHz, and can cover the 5G millimeter wave frequency band. As shown in fig. 6, after the stereoscopic isolation device is added, the port isolation of the dual-band is obviously improved, the isolation of the low-band is improved by 7dB, and the isolation of the high-band is improved by 11dB. As shown in fig. 7, 8, 9 and 10, radiation pattern simulation results of +45° polarization at 25GHz, 27GHz, 40GHz and 45GHz of the isolation enhanced millimeter wave dual-frequency dual-polarized antenna are respectively given, and cross polarization thereof is 24dB, 29dB, 18dB and 25dB, respectively. Therefore, the simulation result shows that the isolation enhanced millimeter wave dual-frequency dual-polarized antenna can be well applied to a 5G millimeter wave frequency band. The three-dimensional isolation device can improve the port isolation of the dual-band and inhibit cross polarization.
Embodiment two:
as shown in fig. 1 and 2, the isolation enhanced millimeter wave dual-frequency dual-polarized antenna comprises a first dielectric substrate a, a second dielectric substrate b and a third dielectric substrate c;
the metal substrate 4 is arranged on the lower surface of the first medium substrate a, and the first metal branch 5a, the second metal branch 5b and the first annular metal patch 1 are arranged on the upper surface of the first medium substrate a;
The second dielectric substrate b is positioned below the third dielectric substrate c, and the upper surface of the second dielectric substrate b is provided with a second annular metal patch 2;
In this embodiment, as shown in fig. 3, the difference from embodiment 1 is that the isolation device is composed of a first annular metal patch 1, a first metal column 7a and a second metal column 7b, and the first metal column 7a and the second metal column 7b are arranged in the center of the first dielectric substrate a in a central symmetrical arrangement manner.
The present embodiment is subjected to verification simulation by HFSS software simulation. As shown in FIG. 11, a graph of S parameter simulation results for the present example is given for operating bands of 23.58GHz-29.89GHz and 36.72GHz-48.29GHz. As shown in fig. 12, 13, 14 and 15, radiation pattern simulation results of +45° polarization at 25GHz, 27GHz, 40GHz and 45GHz of the present embodiment are given, respectively, with cross polarization of 26dB, 12dB and 11dB, respectively. Simulation results show that the port isolation and cross polarization inhibition effects of this embodiment are both improved, but the isolation enhancement effect is worse than that of embodiment 1.
Embodiment III:
as shown in fig. 1 and 2, the isolation enhanced millimeter wave dual-frequency dual-polarized antenna comprises a first dielectric substrate a, a second dielectric substrate b and a third dielectric substrate c;
the metal substrate 4 is arranged on the lower surface of the first medium substrate a, and the first metal branch 5a, the second metal branch 5b and the first annular metal patch 1 are arranged on the upper surface of the first medium substrate a;
The second dielectric substrate b is positioned below the third dielectric substrate c, and the upper surface of the second dielectric substrate b is provided with a second annular metal patch 2;
in this embodiment, as shown in fig. 4, the difference from embodiment 1 is that the shape of the first annular metal patch 1 of the separator is modified from square to annular.
The present embodiment is subjected to verification simulation by HFSS software simulation. As shown in FIG. 16, a graph of S-parameter simulation results for the present example is given for operating bands of 23.98GHz-29.58GHz and 36.96GHz-49.94GHz. As shown in fig. 17, 18, 19 and 20, radiation pattern simulation results of +45° polarization at 25GHz, 27GHz, 40GHz and 45GHz of the present embodiment are given, respectively, with cross polarization of 26dB, 18dB, 10dB and 17dB, respectively. Simulation results show that the port isolation of the embodiment is obviously improved, and the isolation effect is similar to that of embodiment 1.
The simulation results of the three embodiments show that the three-dimensional isolation device can obviously improve the port isolation of the dual frequency bands of the millimeter wave dual-frequency dual-polarized antenna, has a simple structure, does not occupy additional space, and meets the characteristics of miniaturization of the millimeter wave antenna.
The above description is only of the preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can make equivalent substitutions or modifications according to the technical scheme and the inventive concept thereof within the scope of the present invention disclosed in the present invention, and all those skilled in the art belong to the protection scope of the present invention.
Claims (6)
1. The isolation enhanced millimeter wave dual-frequency dual-polarized antenna is characterized by comprising a first dielectric substrate (a), a second dielectric substrate (b) and a third dielectric substrate (c);
The metal substrate (4) is arranged on the lower surface of the first medium substrate (a), and a first metal branch (5 a), a second metal branch (5 b) and a first annular metal patch (1) are arranged on the upper surface of the first medium substrate (a);
The second dielectric substrate (b) is positioned below the third dielectric substrate (c), the upper surface of the second dielectric substrate (b) is provided with a second annular metal patch (2), and the upper surface of the third dielectric substrate (c) is provided with a third annular metal patch (3);
The first dielectric substrate (a) is provided with a first metal probe (6 a), a second metal probe (6 b) and a plurality of metal columns, wherein the first metal probe (6 a) penetrates through the first dielectric substrate (a) to be connected with the first metal branch (5 a) and the metal substrate (4), the second metal probe (6 b) penetrates through the first dielectric substrate (a) to be connected with the second metal branch (5 b) and the metal substrate (4), and the plurality of metal columns penetrate through the first dielectric substrate (a) to be connected with the first annular metal patch (1) and the metal substrate (4);
The first metal branch (5 a) and the second metal branch (5 b) are respectively positioned on two diagonal extension lines of the first annular metal patch (1), and the first metal branch (5 a), the second metal branch (5 b) and the first annular metal patch (1) are in non-contact;
The first annular metal patch (1), the second annular metal patch (2) and the third annular metal patch (3) are respectively positioned at the centers of the upper surfaces of the first dielectric substrate (a), the second dielectric substrate (b) and the third dielectric substrate (c);
The first metal branch (5 a) and the first metal probe (6 a) form a group of L-shaped feed structures, and the second metal branch (5 b) and the second metal probe (6 b) form a group of L-shaped feed structures;
The outer ring of the third annular metal patch (3) is larger than the outer ring of the second annular metal patch (2).
2. The isolation enhanced millimeter wave dual-frequency dual-polarized antenna of claim 1, wherein the materials of the first dielectric substrate (a), the second dielectric substrate (b) and the third dielectric substrate (C) are RO4003C.
3. The isolation enhanced millimeter wave dual-frequency dual-polarized antenna of claim 1, wherein the second annular metal patch (2) and the third annular metal patch (3) are both in the shape of a ring with central symmetry, and comprise a circular ring and a polygonal ring.
4. The isolation enhanced millimeter wave dual-frequency dual-polarized antenna of claim 1, wherein the shape of the first annular metal patch (1) comprises a circular ring and a polygonal ring.
5. The isolation enhanced millimeter wave dual-frequency dual-polarized antenna of claim 1, wherein the number of metal posts is greater than or equal to 2.
6. The isolation enhanced millimeter wave dual-frequency dual-polarized antenna of claim 1, wherein the metal posts are arranged in the center of the first dielectric substrate (a) in a centrosymmetric arrangement.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107342458A (en) * | 2017-07-02 | 2017-11-10 | 中国航空工业集团公司雷华电子技术研究所 | A kind of corner-fed formula wide-band high-isolation dual-polarized antenna |
| CN114243297A (en) * | 2021-11-11 | 2022-03-25 | 华南理工大学 | Compact dual-frequency dual-polarized antenna array applied to millimeter wave beam scanning |
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| JP6466174B2 (en) * | 2015-01-06 | 2019-02-06 | 株式会社東芝 | Manufacturing method of dual-polarized antenna |
| CN111262017B (en) * | 2020-01-15 | 2022-03-29 | 大连海事大学 | Broad axial ratio beam antenna for inhibiting backward cross polarization |
| TWI740551B (en) * | 2020-06-23 | 2021-09-21 | 國立陽明交通大學 | Substrate integrated waveguide-fed cavity-backed dual-polarized patch antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107342458A (en) * | 2017-07-02 | 2017-11-10 | 中国航空工业集团公司雷华电子技术研究所 | A kind of corner-fed formula wide-band high-isolation dual-polarized antenna |
| CN114243297A (en) * | 2021-11-11 | 2022-03-25 | 华南理工大学 | Compact dual-frequency dual-polarized antenna array applied to millimeter wave beam scanning |
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