CN115312646A - Semiconductor light-emitting element - Google Patents

Abstract

A semiconductor light emitting element comprises a semiconductor light emitting sequence, wherein the semiconductor light emitting sequence comprises a first type conductive semiconductor layer, a second type conductive semiconductor layer and a light emitting layer between the first type conductive semiconductor layer and the second type conductive semiconductor layer along the thickness direction; a plurality of finger electrodes positioned at one side in the thickness direction of the semiconductor light emitting sequence; and the ohmic contact regions are positioned on the opposite side of the semiconductor light-emitting sequence from the finger electrodes of the semiconductor light-emitting sequence, the ohmic contact regions between every two adjacent finger electrodes are arranged in a plurality of rows along the extending direction of the finger electrodes, the distance between any one ohmic contact region (A) of the first row closest to the finger electrodes and the adjacent ohmic contact region (B) of the same row is larger than the distance between any one ohmic contact region (A) and the adjacent ohmic contact region (C) of the second row close to the finger electrodes, and the ohmic contact regions of the two adjacent rows are staggered in the direction perpendicular to the finger electrodes.

Description

A semiconductor light emitting element

technical field

The invention relates to a semiconductor light emitting element.

Background technique

LED light-emitting diodes include a first-type conductive semiconductor layer (N-type doped), a light-emitting layer and a second-type conductive semiconductor layer (P-type doped). How to spread the current between the first-type conductive semiconductor layer and the second-type conductive semiconductor layer is a key factor affecting the internal quantum efficiency. For example, the extension electrode is laterally arranged on the side of the main current injection electrode to increase the injection current area and improve the uniformity of the injection current, or an insulating layer is provided between the electrode and the semiconductor sequence, and multiple openings are provided on the insulating layer to form multiple electrodes. Improving the current spread from the electrode to the side of the semiconductor sequence with an ohmic contact area is currently the main improvement method. The positional relationship of multiple ohmic contact regions of the expansion electrode or the opening of the insulating layer will also seriously affect the efficiency of current expansion and transmission.

Contents of the invention

The present invention provides the following semiconductor light-emitting element, which includes a semiconductor light-emitting sequence, and the semiconductor light-emitting sequence includes a first-type conductive semiconductor layer, a second-type conductive semiconductor layer, and a light-emitting layer between them along the thickness direction; a plurality of The finger electrodes are located on one side of the thickness direction of the semiconductor light-emitting sequence; the multiple ohmic contact regions are located on the opposite side of the semiconductor light-emitting sequence from the multiple finger electrodes, and are characterized in that: from the side where the multiple finger electrodes of the semiconductor light-emitting sequence are located Observe that multiple ohmic contact areas between every two adjacent finger electrodes are arranged in multiple columns along the direction of finger electrode extension, among which any ohmic contact area in the first column closest to a finger electrode (A ) The distance between an ohmic contact region (B) adjacent to the same column is greater than that between any one ohmic contact region (A) and an adjacent ohmic contact region (C) of the second column close to the finger electrode The multiple ohmic contact regions of two adjacent columns are arranged staggered in the direction perpendicular to the finger electrodes.

More preferably, the main parts of the plurality of finger electrodes are parallel to each other, more preferably, between the parts extending parallel to each other along the plurality of finger electrodes, the plurality of ohmic contact regions are arranged along the extending direction multiple columns.

More preferably, the plurality of contact regions are arranged in an array.

More preferably, there are four equidistant ohmic contact regions around any ohmic contact region in a column that is not the closest to the finger electrodes.

More preferably, the four equidistant ohmic contact regions form a right-angled square structure.

More preferably, the plurality of contact regions are arranged in such a way that there are six ohmic contact regions equidistantly around one contact region.

More preferably, one adjacent ohmic contact region (C) of the second column is located in the adjacent two second ohmic contact regions (A ) and (B).

More preferably, the distance between any ohmic contact region (A) and an adjacent ohmic contact region (C) of an adjacent column is greater than or equal to twice the distance between two adjacent columns.

More preferably, when viewed from the thickness direction of the semiconductor light-emitting sequence, the multiple finger electrodes do not overlap with the multiple ohmic contact regions.

More preferably, the distance between any one of the contact regions and the adjacent finger electrodes is 5% to 50% of the horizontal distance between two adjacent finger electrodes, and the horizontal distance is carried out from the side of the semiconductor light emitting sequence. The horizontal distance obtained from looking down.

More preferably, the multiple contact areas between every two adjacent finger electrodes are arranged in multiple rows along the direction of the finger electrodes, and the distance between any two adjacent rows of the multiple rows is 1-50 μm.

More preferably, the size of each of the plurality of ohmic contact regions is 1-50 μm.

More preferably, the multiple ohmic contact regions account for 3-50% of the area near the side of the semiconductor light-emitting sequence.

More preferably, the main extension parts of each finger of the plurality of finger electrodes are arranged parallel to each other.

More preferably, the plurality of finger electrodes include the same first electrode region, and the plurality of finger electrodes extend from the first electrode region.

More preferably, the width of the plurality of finger electrodes is 1-20 μm.

More preferably, the insulating layer is formed on the other side in the thickness direction of the semiconductor sequence, the insulating layer has a plurality of exposed regions exposing part of the semiconductor light emitting sequence on the other side in the thickness direction, and the plurality of exposed regions are multiple an ohmic contact area.

More preferably, the insulating layer is magnesium fluoride or calcium fluoride or silicon oxide or silicon nitride.

More preferably, the plurality of exposed regions of the insulating layer are formed by a plurality of through holes, and the opening size of the plurality of through holes on the other side in the thickness direction of the semiconductor light emitting sequence is smaller than the opening on the side away from the semiconductor light emitting sequence size.

More preferably, the side of the insulating layer away from the semiconductor light-emitting sequence has a conductive layer, and the conductive layer may include a specular reflection layer.

By setting that the distance between any contact region in the column where the finger electrode is the closest to the column where the finger electrode is located and the adjacent contact region in the same column is greater than the distance between the one contact region and the adjacent contact region in the adjacent column, The lateral current spread of the finger electrodes along both sides can be effectively improved.

Description of drawings

Fig. 1 is the structure obtained after preparing the first ohmic contact layer on the semiconductor light-emitting sequence in the process method of Example 1;

Fig. 2 is the structure obtained after transferring to the temporary substrate and preparing the second ohmic contact layer in the process method of embodiment 1;

Fig. 3 is the structure obtained by making an insulating layer, a transparent conductive layer, a reflective layer and a bonding support substrate on the second ohmic contact layer in the process method of embodiment 1;

FIG. 4 is a schematic structural view of the semiconductor light-emitting element obtained in Example 1;

5 is a schematic top view of the first ohmic contact layer side of the semiconductor light emitting element obtained in Example 1;

Fig. 6 is a schematic diagram of a partially enlarged structure within the dotted circle in Fig. 5;

Fig. 7 is the structure obtained after preparing the first ohmic contact layer on the semiconductor light-emitting sequence in the process method of Example 2;

Fig. 8 is the structure obtained after preparing the second ohmic contact layer after transferring to the temporary substrate in the process method of embodiment 2;

9 is a schematic structural view of the semiconductor light emitting element of Embodiment 2;

10 is a schematic top view of the second ohmic contact layer side of the semiconductor light emitting element in Example 2;

Fig. 11 is a schematic diagram of a partially enlarged structure within the dotted circle in Fig. 10;

Fig. 12 is a schematic structural view of the semiconductor light emitting element of Embodiment 3;

Fig. 13 is a schematic top view of the first ohmic contact layer side of the semiconductor light emitting element obtained in the comparative example;

FIG. 14 is a schematic diagram of a partially enlarged structure within the dotted circle in FIG. 13 .

Detailed ways

Example 1

Figures 1-6 show the structure manufactured by the manufacturing method according to the corresponding steps disclosed in Embodiment 1 of the present invention. A method for producing an optoelectronic device comprises the following steps according to the invention:

First, provide the semiconductor light emitting sequence:

A growth substrate 101 is provided, such as a growth substrate used for MOCVD growth of semiconductor light-emitting sequences, the substrate includes but not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP ), sapphire, silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), glass, composite, diamond, CVD diamond, diamond-like carbon (DLC) Wait.

The first window layer 101 is formed on a substrate containing at least one element from the group consisting of a material selected from Al, Ga, In, As, P, N, such as GaN, AlGaInP or any other suitable material. The first window layer 111 is a layer of the same conductivity type as the material on the same side of the semiconductor light-emitting sequence, such as N-type or p-type Al _X Ga _(1−X) InP, where 0≦X≦1h; or such as AlGaAs. The first window layer 111 has two opposite first surfaces, wherein the window layer on the first surface is closer to the substrate.

A transition layer can be selectively formed between the growth substrate and the first window layer, and the two material systems of the transition layer can serve as a buffer system (not shown in the figure). Two material systems for the transition layer used in the structure of light-emitting diodes to reduce lattice mismatch. On the other hand, there may also be a transition layer of a single layer, a multi-layer, or a structure combining two materials or separating two transition structures, wherein the material layers may be organic, inorganic, metal, semiconductor, etc., Said structure may be reflective layer, heat conduction layer, conductive layer, ohmic contact layer, anti-deformation layer; stress relief layer, a kind of stress adjustment layer, adhesive layer, wavelength conversion layer, mechanical fixing structure, etch stop layer, etc.

Next, a semiconductor light-emitting sequence is formed on the window layer 101 , including at least the first semiconductor layer 103 having the first conductivity type, and the light-emitting layer 104 and the second semiconductor layer 1105 having the second conductivity type. The first semiconductor layer and the second semiconductor layer 105 are two single-layer structures, or two multi-layer structures, "multi-layer" refers to two or more layers with different conductivity), the first conductivity type and the second The conductivity types provide electrons or holes, respectively, and are doped with different dopants. If the first semiconductor layer 103 and the second semiconductor layer 105 are semiconductor materials, such as Al _X Ga _(1−X) InP, where 0≦X≦1, or such as AlGaAs; the first or second conductivity type can be P type or N type. As an example, the first window layer 103 has the same conductivity type as the first semiconductor layer, such as N type. In addition, the first window layer 101 may have a higher impurity concentration than the first semiconductor layer 103 , and thus has better conductivity. Other non-semiconductor materials, such as metals, oxide layers, insulating layers, etc., can also be selectively formed on the surface of the semiconductor light emitting sequence.

The light-emitting layer 104 is formed by stacking a series of commonly used materials such as aluminum gallium indium phosphide (AlGaInP), aluminum indium gallium nitride (AlInGaN) or aluminum gallium arsenic (AlGaAs), specifically single heterojunction, double heterojunction A junction structure or a multi-quantum well structure, including an MQW structure, including a plurality of barrier layers and well layers alternately stacked; each barrier layer includes AlyGa(1−y)InP, where 0≦y≦1, and each of the The well layer includes AlzGa(1−z)InP, where 0≦z≦1. In addition, the wavelength of the emitted light can also be adjusted by changing the composition of the well or barrier layer to the number of quanta, for example, the dominant wavelength of the emitted light between 600 and 630 nm is about 0.7 for the red light y or between 580 and 600 nm Between the amber, y is about 0.55. The luminescent radiation provided by the luminescent layer 104 may be ultraviolet to green light of 200-550nm, or red, yellow, orange, amber or infrared light of 550-950nm.

Form the second window layer 106 above the semiconductor light-emitting sequence, which can be used as the current spreading layer on the side of the second semiconductor layer 105, and its material contains at least one selected from the group consisting of Al, Ga, In, As, P, N, Such as GaN, AlGaInP or any other suitable material, the second window layer 106 includes at least one material different from the material of the semiconductor light-emitting sequence, the second window layer is preferably the same conductivity type as the second semiconductor layer, such as p-type GaP Floor. As an example, the second window layer can adopt the same preparation process as that of the semiconductor sequence, or can be used as an integral part of the semiconductor light emitting sequence.

Second, make the first ohmic contact layer on the second window:

Then, as shown in Figure 1, form the first ohmic contact layer 107 such as conductive material such as metal or transparent inorganic oxide conductive material, metal such as alloy, specifically such as AuBe or AuGe, also can be single-layer or multi-layer metal or alloy , the first ohmic contact layer is mainly used for ohmic contact and current expansion between the electrode and the side of the semiconductor light-emitting sequence; the inorganic oxide conductive material can be ITO, IZO or GZO, etc., on the second window layer 106 . The first ohmic contact layer 107 is preferably, but not limited to, formed on the side of the second semiconductor layer by evaporation or electroless plating, and then alloyed at 300-500°C to form the first ohmic contact layer 107 of ohmic contact. Alloyed contact layer with the second window layer. Details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.

Third, remove the growth substrate:

As shown in FIG. 2, the temporary substrate 108 such as glass is bonded to the first ohmic contact layer 107 and the second window layer 106, and the growth substrate 101 is removed. The bonding can be made of glue or resin, etc. Materials that are removed by heating or solvent dissolution or decomposition, the bonding process is a conventional process. There are many ways to remove the growth substrate. According to the actual growth substrate, conventional options can be performed, such as wet etching or dry etching or grinding; removing the growth substrate to expose the first window layer 102 .

Fourth, form the second ohmic contact layer, reflective layer and supporting substrate on the side of the first window layer:

Forming a second ohmic contact layer 109 on the first window layer 102, the second ohmic contact layer 109 is preferably made of a metal material, more preferably a metal alloy, in order to form a good electrical contact between the first window layers, Such as AuGe or AuBe. The second ohmic contact layer 109 is formed on the first window layer 102 in the form of a plurality of ohmic contact regions, and does not overlap with the first ohmic contact layer 107 in the thickness direction, so as to improve the thickness of the first ohmic contact layer 107. The current spreads with the second ohmic contact layer 109 .

As shown in Figure 3, then form a transparent insulating layer 110 on the surface of the second ohmic contact layer 109, the formation process of the transparent insulating layer 110 is preferably but not limited to electron beam or sputtering evaporation, the material of the insulating layer 110 is oxide compounds or nitrides or fluorides, such as silicon dioxide, silicon nitride or calcium fluoride or magnesium fluoride, etc., the refractive index of the insulating layer 110 is between 1.3 and 1.6, at least the refractive index of the insulating layer 1.5 lower than the refractive index of the first window layer 102 . The thickness of the insulating layer 110 is 50-500 nm, more preferably 50-100 nm; the insulating layer 110 is etched by BOE or RIE method to expose the second ohmic contact layer 109 or may further expose the first window layer 102 part. Then make transparent conductive layer 111 on the second ohmic contact layer 109 and insulating layer 110 surface, described transparent conductive layer is the metal oxide of transparent conduction, as ITO, IZO, GZO or CTO, the thickness of this transparent conductive layer 111 can be Preferably it is 5~15nm. Then a metal reflective layer 112 is formed on the transparent conductive layer 111 , and the transparent conductive layer 111 can play an adhesive role between the metal reflective layers 112 . The function of the insulating layer 109 is to block the current. When the current flows through the second ohmic contact layer 109, the multiple second ohmic contact layers 109 have the effect of spreading the current. At the same time, the insulating layer 110 and the metal reflective layer 112 can form an ODR structure to improve Reflection efficiency, the reflectivity can reach more than 95%.

The reflective layer 112 is bonded to the support substrate 113. The bonding process can be metal-metal high-temperature high-pressure bonding, and the metal-metal bonding composition can be at least one of In, Au, Sn, Pb, InAu, and SnAu.

Then the temporary substrate 108 is removed to expose the first ohmic contact layer and the first window layer.

Fifth, remove the temporary substrate and make the first and second electrodes:

As shown in Figure 4, a first electrode 1071 is formed on the first ohmic contact layer 107, the material of the first electrode 1071 is preferably a metal material that can be used for external bonding wires, more preferably at least one of gold and aluminum, the first electrode 1071 connects one end of the finger electrodes of a plurality of first ohmic contact layers 1071, and extends the other end of the finger electrodes to form a second electrode 114 on the back side of the supporting substrate 113. The second electrode is preferably a metal or a metal alloy , such as Pt, Au.

Carry out cutting and separation to form chips of corresponding size. In order to better protect the semiconductor light-emitting sequence and the second ohmic contact layer, an insulating protective layer is formed on the exposed side and surface of the semiconductor light-emitting sequence and the surface of the second ohmic contact layer to complete the production of a single chip. This single chip can be used for transfer to subsequent packaging and fabrication of applications.

The positional relationship between the first ohmic contact layer and the second ohmic contact layer will be specifically described below. As shown in FIG. 5 , the first ohmic contact layer 107 includes a plurality of finger electrodes extending horizontally on one side of the second window layer 106, and the plurality of finger electrodes are connected to the first electrode 1071, and the current is injected through the first electrode 1071 and passed through A plurality of finger electrodes expand and inject current into the semiconductor light-emitting sequence, and then transfer it longitudinally and laterally to multiple contact regions of the second ohmic contact layer along the thickness direction of the semiconductor light-emitting sequence, and pass it down to the second electrode , or transfer current from the second electrode to multiple contact regions of the second ohmic contact layer, further transfer to the semiconductor light-emitting sequence, and then transfer to the first electrode through multiple finger electrodes of the first ohmic contact layer, thereby improving current transfer uniformity.

The small part of each finger electrode connected to the first electrode can be curved or bent or linear; in order to ensure the uniformity of current transmission of the finger electrode on one side of the semiconductor sequence, preferably each finger electrode The main part of the main part is a parallel extension, as far as possible means that the parallel can deviate from parallel by about 10° at most, that is, a plurality of finger electrodes can extend out in a manner that the main parts are parallel to each other; the number of the plurality of finger electrodes is at least Two, the width of each finger electrode and the spacing between adjacent fingers can be conventionally designed according to the size of the actual chip; the width of the multiple finger electrodes can be along the direction in which the finger electrodes extend: Constant or variable according to the uniformity of current diffusion, such as the width can gradually decrease along the extension direction, the size of the part of the finger electrode around the first electrode is greater than the size of the part away from the first electrode; the plurality of The width of the finger electrodes is 1 to 50 μm.

Viewed from the finger electrode side of the semiconductor light emitting sequence, the second ohmic contact layer 107 between every two adjacent finger electrodes is arranged in the form of a plurality of dots to form a plurality of second ohmic contact regions. The ohmic contact regions are arranged in multiple rows along the direction parallel to the finger electrodes. More preferably, the plurality of finger electrodes do not overlap with the second ohmic contact regions in the thickness direction so as to facilitate the flow of current in the lateral and longitudinal directions. Simultaneous propagation; more preferably, the plurality of second ohmic contact regions are arranged in an array on one side of the semiconductor light-emitting sequence, and the array is arranged as a certain fixed number of second ohmic contact regions. The cells are formed by repeated arrangement, specifically as shown in Figure 5, a plurality of second ohmic contact areas are arranged in the closest hexagonal arrangement, that is, one second ohmic contact area (a plurality of second ohmic contact areas in a column closest to the strip electrode region) has six equidistant second ohmic contact regions around it, preferably, the size of each second ohmic contact region is 1-50 μm, and each of the plurality of second contact regions is circular or polygonal Or ellipse, the ratio between the total area of the multiple ohmic contact regions and the area on one side of the semiconductor sequence is 3-50%.

Since the path of current transmission is preferably selected as the shortest path (minimum resistance), the vertical distance between the plurality of second ohmic contact areas in the first column closest to a finger electrode is the closest to the finger electrode, and the second column The multiple ohmic contact areas are far away from the finger electrodes vertically, and the current is preferably transmitted from the vertical direction of the finger electrode extension direction to the multiple second ohmic areas on both sides closest to the first column, and the current is easier to congest to The ohmic contact area of the first column leads to excessive concentration of current in multiple second ohmic contact areas of the first column, and uneven current transfer; therefore, in order to ensure uniform current transfer between the finger electrode and the second ohmic contact area To prevent the current from concentrating near both sides of the finger electrodes, the present invention is specially designed to place the second ohmic contact electrodes as close as possible to the finger electrodes, and the distance from the finger electrode side to the second row of multiple second ohmic contact areas Closer.

：1；更优选的，在垂直于指状电极的方向上看，第二列的任意一个第二欧姆接触区域C位于第一列的临近两个第二欧姆接触区域A和B之间，即在垂直于指状电极的方向上看，第二欧姆接触区域C与第一列的两个第二欧姆接触区域A和B错开排列或相间隔排列，即第二接触区域C不与第二接触区域A和B的连线不垂直于指状电极，由此可以保证指状电极的部分电流会较容易地流向第二接触区域C，降低电流集中在第一列的多个第二欧姆接触区域内的比例；更优选的，相邻两列之间的距离为D2值的一半。Specifically as shown in FIG. 6 , the distance between any second ohmic contact region A in the first column closest to the finger electrode and the second ohmic contact region B adjacent to the same column is greater than the one second ohmic contact region A The distance between an adjacent second ohmic contact area C in an adjacent column; specifically, define any second ohmic contact area A in the first column closest to the finger electrode parallel to the extension direction of the finger electrode and The distance between adjacent second ohmic contact regions B in the same column is D1, and the range of D1 is 1-50 μm, and any one of the second ohmic contact regions B in the first column closest to the finger electrodes is adjacent to The distance D2 between an adjacent second ohmic contact area C of a column, D1 is greater than D2, thus ensuring that an adjacent second ohmic contact area C of an adjacent column is as close as possible to the finger electrode; more preferably, as shown in Figure 6 shows that when multiple second ohmic contact regions are arranged in the closest hexagonal arrangement, the ratio between D1 and D2 is

: 1; more preferably, when viewed in a direction perpendicular to the finger electrodes, any second ohmic contact region C of the second column is located between two adjacent second ohmic contact regions A and B of the first column, that is Viewed in the direction perpendicular to the finger electrodes, the second ohmic contact region C is staggered or spaced apart from the two second ohmic contact regions A and B in the first column, that is, the second contact region C is not in contact with the second The connecting line between regions A and B is not perpendicular to the finger electrodes, thereby ensuring that part of the current of the finger electrodes will flow to the second contact region C more easily, reducing the concentration of current on multiple second ohmic contact regions in the first column ratio within; more preferably, the distance between two adjacent columns is half of the value of D2.

More preferably, the distance between two adjacent second ohmic contact regions in any column is defined as a unit D3, and the distance between any second ohmic contact region and an adjacent second ohmic contact region in an adjacent column The distance is less than the one unit D4, where D3=D1, D4=D2.

In order to ensure a good current spread between the finger electrodes and the second ohmic contact area, the distance between any second ohmic contact area in the first column closest to the finger electrodes parallel to the extension direction of the finger electrodes and the finger electrodes The distance between them is 5%~50% of the horizontal distance between two adjacent finger electrodes; on the contrary, if the multiple second ohmic contact areas of the first column are too close to the finger electrodes, it will cause excessive current concentration and Multiple second ohmic contact areas in the first column are not conducive to the lateral transfer of current.

Example 2

The manufacturing process that is different from Embodiment 1 is that on the light-emitting semiconductor sequence produced in the first step, a second ohmic contact layer 201 such as a metal alloy, such as AuBe or AuGe alloy is formed on the second window layer 106, thereby forming a 7 shows the structure. The second ohmic contact layer 201 includes a plurality of independent ohmic contact regions distributed horizontally along one side of the second window layer 106 . Then alloying treatment at 300-500° C. is used to form an alloyed contact layer between the second ohmic contact layer 201 and the second window layer 106 for ohmic contact. Details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.

As shown in Figure 8, a transparent insulating layer 202 is formed on the surface of the second ohmic contact layer 201, the forming process of the transparent insulating layer 202 is electron beam or sputtering evaporation, and the material of the insulating layer 202 is oxide or nitride Or fluoride, such as silicon dioxide, silicon nitride or calcium fluoride or magnesium fluoride, etc., the refractive index of the insulating layer 202 is between 1.3~1.6, at least the refractive index of the insulating layer is higher than that of the first window The refractive index of the layer is 1.5 lower. The thickness of the insulating layer 202 is 50-500 nm, more preferably 50-100 nm; the insulating layer 202 is etched by BOE or RIE method to expose the second ohmic contact layer 201 or can further expose the second window layer 201 part.

Then make transparent conductive layer 203 on the second ohmic contact layer 201 and insulating layer 202 surface, described transparent conductive layer 203 is the metal oxide of transparent conduction, as ITO, IZO, GZO or CTO, the thickness of this transparent conductive layer is 5~500nm. Then a metal reflective layer 204 is formed on the transparent conductive layer 203, and the transparent conductive layer 203 plays an adhesive role between the metal reflective layers. The function of the insulating layer 202 is to block the current. When the current flows through the second ohmic contact layer, the multiple first ohmic contact layers have a current spreading effect. At the same time, the insulating layer 203 and the reflective layer 204 can form an ODR structure to improve the reflection efficiency. The reflectivity can reach more than 95%; the reflective layer can be made of metal materials with high reflectivity such as silver and gold.

Then, the reflective layer 204 is bonded to the support substrate 205. The bonding process can be metal-metal high-temperature high-pressure bonding, and the metal-metal bonding composition can be at least one of In, Au, Sn, Pb, InAu, and SnAu.

Then the growth substrate 101 is removed to expose the first window layer 102 .

Next, a first ohmic contact layer 207 is formed on the first window layer 102, such as a conductive material such as AuBe or AuGe alloy. The first ohmic contact layer 107 is preferably, but not limited to, formed on the side of the second semiconductor layer by evaporation or electroless plating, and then alloyed at 300-500°C to form the first ohmic contact layer of ohmic contact 107 and the alloyed contact layer between the first window layer 102 . Details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.

Then a first electrode 2071 is formed on the first ohmic contact layer 207 , the first electrode 2071 is used for external electrical connection, and a second electrode 206 is formed on the back side of the supporting substrate 205 .

Specifically, the first ohmic contact layer 207 includes a plurality of finger electrodes extending horizontally on one side of the second window layer, the plurality of finger electrodes are connected to the first electrode 2071, and the current is injected through the first electrode 2071 and passed through the plurality of finger electrodes. The electrode expands the current, and then transfers the current to multiple contact regions of the second ohmic contact layer longitudinally and laterally along the thickness direction of the semiconductor light-emitting sequence, and then transfers the current downward to the second electrode 206, or transfers the current from the second electrode 206 to the The plurality of contact regions of the second ohmic contact layer are further transferred to the semiconductor light emitting sequence, and then transferred to the first electrode through the plurality of finger electrodes of the first ohmic contact layer.

The small part near the connection between each finger electrode and the first electrode can be curved or bent or linear; in order to ensure the uniformity of current transmission of the finger electrode on one side of the semiconductor sequence, it is preferable that each finger electrode The main part of the electrodes should be as parallel as possible, that is, multiple finger electrodes can extend out in a way that the main parts are parallel to each other; the width of each finger electrode and the distance between adjacent fingers can be adjusted according to the size of the actual chip. design; the width of the plurality of finger electrodes can be constant along the direction in which the finger electrodes extend or change according to the uniformity of current diffusion, such as the width can gradually decrease along the extension direction, and the finger electrodes can be The size of the part around the first electrode is larger than the size of the part away from the first electrode; the width of the plurality of finger electrodes is 1-20 μm.

，相邻两列的多个欧姆接触区域在垂直于指状电极的方向错开排列。所述的多个第二欧姆接触区域以方形的结构作为阵列的图形，即其中非最靠近指状电极的其它列中的任意一个欧姆接触区域C’周围存在等距的四个欧姆接触区域（包括A’、B’），该四个欧姆接触区域处于方形的四个角位置，所示的方形为正方形或长方形；每一第二欧姆接触区域的尺寸为1~50μm；所述的多个第二接触区域的每一个是圆形或多边形或椭圆形；所述的多个欧姆接触区域的总面积与所在半导体序列一侧的面积之间的比例为3~50%；更优选的任意一个欧姆接触区域（A）与相邻一列的相邻一个欧姆接触区域（C）之间的距离大于相邻两列之间的距离的两倍。Viewed from the thickness direction of the semiconductor light-emitting sequence, the second ohmic contact layer 201 between every two adjacent finger electrodes is arranged in the form of a plurality of dots to form a plurality of second ohmic contact regions. The regions are arranged in multiple columns along the direction parallel to the finger electrodes; wherein the plurality of finger electrodes do not overlap with the plurality of second ohmic contact regions in the thickness direction; the plurality of second ohmic contact regions are arranged in an array in the semiconductor light emitting On one side of the sequence, the array is an array formed by the arrangement of several second ohmic contact regions as repeating units, specifically as in this embodiment or as shown in Figure 10-11, where the closest finger The distance between any one ohmic contact region A' of the first column of electrodes and the adjacent ohmic contact region B' of the same column is greater than the distance between any one ohmic contact region A' and the adjacent second column close to the finger electrode The distance between one ohmic contact area C', the multiple ohmic contact areas of two adjacent columns are staggered in the direction perpendicular to the finger electrodes; more preferably, any ohmic contact of the first column closest to the finger electrodes The distance between the region (A, A') and the adjacent ohmic contact region (B, B') of the same column is the same as the distance between any one ohmic contact region (A, A') and the second column close to the finger electrode The ratio between the distances between adjacent one ohmic contact regions (C, C') is greater than

, a plurality of ohmic contact regions in two adjacent columns are staggered in a direction perpendicular to the finger electrodes. The plurality of second ohmic contact regions take a square structure as an array pattern, that is, there are four equidistant ohmic contact regions ( Including A', B'), the four ohmic contact regions are located at the four corners of a square, and the square shown is a square or a rectangle; the size of each second ohmic contact region is 1-50 μm; the multiple Each of the second contact regions is circular or polygonal or elliptical; the ratio between the total area of the plurality of ohmic contact regions and the area on one side of the semiconductor sequence is 3 to 50%; more preferably any one The distance between the ohmic contact area (A) and an adjacent ohmic contact area (C) of an adjacent column is greater than twice the distance between two adjacent columns.

Example 3

The structure shown in Figure 12 is different from Embodiment 2 in that an insulating layer 301 is first formed on the second window layer 106, and the formation process of the transparent insulating layer 301 is electron beam or sputtering evaporation, and the insulating layer The material of 301 is oxide or nitride or fluoride, such as silicon dioxide, silicon nitride or calcium fluoride or magnesium fluoride, etc., the refractive index of the insulating layer is between 1.3 and 1.6, at least the insulating layer The refractive index of layer 301 is 1.5 lower than the refractive index of first window layer 106 . The thickness of the insulating layer 301 is 50-500nm, more preferably 50-100nm; the insulating layer 301 is etched by BOE or RIE method to expose the first window layer, and the insulating layer 301 is formed as a plurality of tiny through holes. Holes; the size of each through hole is 1-50 μm, and the percentage of the multiple through holes occupying one side of the second window layer 106 or the semiconductor light-emitting sequence is 10-50%.

A transparent conductive layer 302 such as ITO, IZO, GZO or CTO is further fabricated in the plurality of through holes exposed on the side of the second window layer 106 and on the surface of the insulating layer 301. The thickness of the transparent conductive layer 302 is 5-5000 nm, and the transparent The conductive layer can also be made of a single layer or multiple layers of different materials. The contact area between the transparent conductive layer 302 and the second window layer 106 is a plurality of ohmic contact areas, and then the metal reflective layer 303 is formed on the transparent conductive layer 302 . Then, the bonding support substrate 304 and the subsequent manufacturing process are the same as those in the second embodiment.

Next, a first ohmic contact layer 307 is formed on the first window layer 102 , such as a conductive material such as AuBe or AuGe alloy. The first ohmic contact layer 307 is preferably, but not limited to, formed on the side of the second semiconductor layer by evaporation or electroless plating, and then alloyed at 300-500°C to form the first ohmic contact layer of ohmic contact 307 and the alloyed contact layer between the first window layer 102 . Details of the alloying process described are well known to those skilled in the art and need not be disclosed herein.

Then a first electrode 3071 is formed on the first ohmic contact layer 307 , the first electrode 3071 is used for external electrical connection, and a second electrode 305 is formed on the back side of the supporting substrate 205 .

The positional relationship between the finger electrodes of the first ohmic contact layer 307 and the multiple ohmic contact regions of the transparent conductive layer 302 is the same as that of the first embodiment.

Comparative example 1

The materials of each layer of the light-emitting element are set in the same way as in Example 1, and as shown in Figure 13, the plurality of second ohmic contact regions in this comparative example are arranged in the closest hexagonal manner, that is, the number of second ohmic contact regions There are six equidistant ohmic contact regions around any second ohmic contact region. The difference from Embodiment 1 is that, as shown in FIG. 14 , the distance between the multiple contact regions A'' and B'' is equal to the distance between the ohmic contact regions B'' and C''. According to this arrangement, Different from the distance between the ohmic contact regions A and B in Fig. 5 and Fig. 6 is greater than the distance between the ohmic contact regions B and C; according to this arrangement, due to the multiple adjacent The ohmic contact area of the ohmic contact area is far away from the finger electrode, so the current will preferably concentrate between two adjacent second ohmic contact areas close to the first column, resulting in the current being more likely to be crowded in multiple second ohmic contact areas of the first column. In the ohmic contact area, the lateral current diffusion in the area between the finger electrodes is more difficult and the diffusion is not uniform.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the Within the scope of protection of the present invention.

Claims (21)

1. A semiconductor light emitting element, comprising:

a semiconductor light emitting sequence including a first type conductivity semiconductor layer, a second type conductivity semiconductor layer, and a light emitting layer therebetween;

a plurality of finger electrodes positioned at one side in the thickness direction of the semiconductor light emitting sequence;

a plurality of ohmic contact regions on the opposite side of the semiconductor light emitting sequence from the plurality of finger electrodes;

the method is characterized in that: the main parts of the plurality of finger electrodes are parallel to each other, and a plurality of ohmic contact areas between the main parts of every two adjacent finger electrodes which are parallel to each other are arranged along the finger electrodes when viewed from one side of the semiconductor light-emitting sequence where the plurality of finger electrodes are arranged

The directions in which the main portions parallel to each other extend are arranged in a plurality of rows, wherein the distance between any one ohmic contact region (a, a ') of a first row of the main portion closest to one of the finger electrodes and an adjacent ohmic contact region (B, B') of the same row is larger than the distance between any one ohmic contact region (a, a ') and an adjacent one ohmic contact region (C, C') of a second row of the main portion closest to the one of the finger electrodes, a plurality of ohmic contact regions of the adjacent two rows are staggered in a direction perpendicular to the direction in which the main portion parallel to the one of the finger electrodes extends, and the array arrangement has four equidistant ohmic contact regions around any one ohmic contact region.

2. A semiconductor light-emitting element according to claim 1, wherein: the four equidistant ohmic contact regions form a right-angled square.

3. A semiconductor light-emitting element according to claim 1, wherein: the ratio of the distance between any one ohmic contact region (A, A ') of the first column closest to the finger electrodes and the adjacent ohmic contact region (B, B') of the same column to the distance between any one ohmic contact region (A, A ') and the adjacent ohmic contact region (C, C') of the second column closest to the finger electrodes is not less than or equal to, and the plurality of ohmic contact regions of the adjacent two columns are staggered in the direction perpendicular to the finger electrodes.

4. A semiconductor light-emitting element according to claim 1, wherein: viewed perpendicular to the extension direction of the finger electrodes, an adjacent one of the ohmic contact areas (C, C ') of the second column is located between two adjacent second ohmic contact areas (a, a ') and (B, B ') of the column closest to the finger electrodes.

5. A semiconductor light emitting element according to claim 1, wherein: the distance between any one ohmic contact region (A, A ') and an adjacent one ohmic contact region (C, C') of an adjacent column is greater than or equal to twice the distance between the adjacent two columns.

6. A semiconductor light emitting element according to claim 1, wherein: the plurality of finger electrodes are not overlapped with the plurality of ohmic contact regions when viewed from the thickness direction of the semiconductor light emitting sequence.

7. A semiconductor light-emitting element according to claim 1, wherein: the plurality of finger electrodes are connected to the same first electrode area, and the plurality of finger electrodes extend out from the first electrode area.

8. A semiconductor light emitting element according to claim 1, wherein: the insulating layer is formed on the opposite side of the thickness direction of the semiconductor light-emitting sequence and the finger electrode, and the insulating layer is provided with a plurality of exposed areas which expose a part of the semiconductor light-emitting sequence, and the exposed areas are a plurality of ohmic contact areas.

9. A semiconductor light-emitting element according to claim 1, wherein: the exposed areas of the insulating layer are formed by a plurality of through holes, and the opening size of the through holes on the side of the semiconductor light-emitting sequence is smaller than that on the side far away from the semiconductor light-emitting sequence.

10. The semiconductor light-emitting element according to claim 1, wherein: and one side of the insulating layer, which is far away from the semiconductor light-emitting sequence, is provided with a conductive layer, and the conductive layer comprises a mirror reflection layer.

11. The semiconductor light-emitting element according to claim 1, wherein: the distance between two adjacent ohmic contact regions of any one column is greater than the distance between any one ohmic contact region and one second ohmic contact region of an adjacent column.

12. A semiconductor light emitting element, comprising:

a semiconductor light emitting sequence including a first type conductivity semiconductor layer, a second type conductivity semiconductor layer, and a light emitting layer therebetween;

a plurality of finger electrodes positioned at one side in the thickness direction of the semiconductor light emitting sequence;

a plurality of ohmic contact regions on the opposite side of the semiconductor light emitting sequence from the plurality of finger electrodes;

the method is characterized in that: the main parts of the plurality of finger electrodes are parallel to each other, and a plurality of ohmic contact areas between the main parts of every two adjacent finger electrodes which are parallel to each other are arranged along the finger electrodes when viewed from one side of the semiconductor light-emitting sequence where the plurality of finger electrodes are arranged

The directions in which the main portions parallel to each other in the poles extend are arranged in a plurality of rows, wherein the distance between any one ohmic contact region (a, a ') of a first row of the main portion closest to one of the finger electrodes and an adjacent ohmic contact region (B, B') of the same row is larger than the distance between any one ohmic contact region (a, a ') and an adjacent one ohmic contact region (C, C') of a second row of the main portion closest to the one of the finger electrodes, a plurality of ohmic contact regions of the adjacent two rows are arranged in a staggered manner in the direction perpendicular to the direction in which the main portion parallel to the one of the finger electrodes extends, and the four equidistant ohmic contact regions constitute a rectangle.

13. A semiconductor light emitting element according to claim 13, wherein: the ratio of the distance between any one ohmic contact region (A, A ') of the first column closest to the finger electrodes and the adjacent ohmic contact region (B, B') of the same column to the distance between any one ohmic contact region (A, A ') and the adjacent ohmic contact region (C, C') of the second column closest to the finger electrodes is not less than or equal to, and the plurality of ohmic contact regions of the adjacent two columns are staggered in the direction perpendicular to the finger electrodes.

14. A semiconductor light emitting element according to claim 13, wherein: viewed perpendicular to the direction of extension of the finger electrodes, an adjacent one of the ohmic contact areas (C, C ') of the second column is located between two adjacent ones of the ohmic contact areas (a, a ') and (B, B ') of the column closest to the finger electrodes.

15. A semiconductor light-emitting element according to claim 13, wherein: the distance between any one ohmic contact region (A, A ') and an adjacent one ohmic contact region (C, C') of an adjacent column is greater than or equal to twice the distance between the adjacent two columns.

16. A semiconductor light-emitting element according to claim 13, wherein: the plurality of finger electrodes are not overlapped with the plurality of ohmic contact regions when viewed from the thickness direction of the semiconductor light emitting sequence.

17. A semiconductor light emitting element according to claim 13, wherein: the plurality of finger electrodes are connected to the same first electrode area, and the plurality of finger electrodes extend out from the first electrode area.

18. A semiconductor light emitting element according to claim 13, wherein: the insulating layer is formed on the opposite side of the thickness direction of the semiconductor light emitting sequence and the finger electrode, and the insulating layer is provided with a plurality of exposed areas to expose part of the semiconductor light emitting sequence, and the exposed areas are a plurality of ohmic contact areas.

19. A semiconductor light emitting element according to claim 13, wherein: the exposed areas of the insulating layer are formed by a plurality of through holes, and the opening size of the through holes on the side of the semiconductor light-emitting sequence is smaller than that on the side far away from the semiconductor light-emitting sequence.

20. The semiconductor light-emitting element according to claim 13, wherein: and one side of the insulating layer, which is far away from the semiconductor light-emitting sequence, is provided with a conducting layer, and the conducting layer comprises a mirror reflection layer.

21. The semiconductor light-emitting element according to claim 13, wherein: the distance between two adjacent ohmic contact regions of any one column is greater than the distance between any one ohmic contact region and one second ohmic contact region of an adjacent column.

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