CN115312639B - Light emitting element, manufacturing method of light emitting element and display panel - Google Patents

Abstract

The application provides a light-emitting element, a manufacturing method of the light-emitting element and a display panel, which comprise a first semiconductor structure, a first light-emitting layer and a second semiconductor structure which are sequentially stacked in a first direction, wherein the first semiconductor structure and the second semiconductor structure comprise conductive elements, when voltage is applied, the conductive elements can conduct electricity, so that the first semiconductor structure and the second semiconductor structure are conducted to enable the light-emitting layer to emit light, an included angle between a plane of the first light-emitting layer and the first direction is smaller than 90 degrees, and a light-emitting direction is perpendicular to the first direction.

Description

Light-emitting element, method for manufacturing light-emitting element, and display panel

Technical Field

The present application relates to the display field, and in particular to a light-emitting element, a method for manufacturing a light-emitting element, and a display panel.

Background Art

The QNED display uses Quantum Nano Cell Emitting Diode (QNED), which is a derivative of nanoscale semiconductor particle quantum dots and nitrogen light-emitting diode (GaN LED) technology. In theory, it has the advantages of long life, high brightness, low power consumption and combustion elimination. In the QNED structure, the LED needs to be placed horizontally on the substrate, that is, the stacking direction of the LED is perpendicular to the stacking direction of the QNED device. However, the light-emitting surface of such an LED structure is only the side surface of the light-emitting layer, the light-emitting area is small, and the display brightness is low.

Summary of the invention

In view of this, the purpose of this application is to provide a light-emitting element, a method for manufacturing a light-emitting element, and a display panel, which can increase the light-emitting area, increase the proportion of vertical light emission, and improve the display brightness. The specific scheme is as follows:

In a first aspect, the present application provides a light-emitting element, comprising a first semiconductor structure, a first light-emitting layer, and a second semiconductor structure stacked in sequence in a first direction;

The first semiconductor structure and the second semiconductor structure include conductive elements;

The angle between the plane where the first light-emitting layer is located and the first direction is less than 90°.

In a second aspect, the present application also provides a method for manufacturing a light-emitting element, comprising:

providing a substrate;

A first semiconductor structure, a first light-emitting layer, and a second semiconductor structure are sequentially formed on the substrate; the first semiconductor structure and the second semiconductor structure include conductive elements; the angle between the plane where the first light-emitting layer is located and a first direction is less than 90°; and the first direction is along the stacking direction of the first semiconductor structure, the first light-emitting layer, and the second semiconductor structure;

After removing the substrate, the second semiconductor structure, the first light-emitting layer and the first semiconductor structure are cut along the first direction to obtain a plurality of light-emitting elements.

In a third aspect, an embodiment of the present application further provides a display panel, including:

Display substrate;

The light-emitting element as described above is located on one side of the display substrate, wherein the stacking direction of the first semiconductor structure, the first light-emitting layer and the second semiconductor structure in the light-emitting element is parallel to the plane where the display substrate is located;

a first electrode in contact with the first semiconductor structure;

A second electrode is in contact with the second semiconductor structure.

The embodiments of the present application provide a light-emitting element, a method for manufacturing a light-emitting element, and a display panel, comprising a first semiconductor structure, a first light-emitting layer, and a second semiconductor structure stacked in sequence in a first direction, wherein the first semiconductor structure and the second semiconductor structure comprise a conductive element, and when a voltage is applied, the conductive element can conduct electricity, thereby conducting the first semiconductor structure and the second semiconductor structure to make the light-emitting layer emit light, and the angle between the plane where the first light-emitting layer is located and the first direction can be set to be less than 90°, and the light-emitting direction is perpendicular to the first direction. Compared with the prior art, the plane where the first light-emitting layer is located is perpendicular to the first direction, resulting in the light-emitting surface being only the side surface of the first light-emitting layer. In the present application, there is an angle between the plane where the first light-emitting layer is located and the first direction, so that the light-emitting surface can be the side surface of the first light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, which can increase the light-emitting area, increase the proportion of vertical light emission, and improve the display brightness.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

FIG1 shows a schematic diagram of the structure of an LED in the prior art;

FIG2 shows a schematic structural diagram of a cylindrical light-emitting element provided in an embodiment of the present application;

FIG3 is a schematic cross-sectional view of the light emitting element in FIG2 along the A'A' direction;

FIG4 is a schematic diagram of the structure of another light-emitting element provided in an embodiment of the present application;

FIG5 is a schematic cross-sectional view of the light emitting element in FIG4 along the A'A' direction;

FIG6 is a schematic diagram of the structure of another light emitting element provided in an embodiment of the present application;

FIG7 is a schematic diagram of the structure of another light emitting element provided in an embodiment of the present application;

FIG8 is a schematic cross-sectional view of the light emitting element in FIG7 along the A'A' direction;

FIG9 is a schematic diagram of the structure of another light emitting element provided in an embodiment of the present application;

FIG10 is a schematic diagram of the structure of another light-emitting element provided in an embodiment of the present application;

FIG11 is a schematic cross-sectional view of the light emitting element in FIG10 along the A'A' direction;

FIG12 is a schematic flow chart of a method for manufacturing a light-emitting element provided in an embodiment of the present application;

13-20 are schematic diagrams of structures in a light emitting element manufacturing process provided in an embodiment of the present application;

FIG21 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application;

FIG. 22 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application.

DETAILED DESCRIPTION

In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

As described in the background technology, in the QNED structure, the LED needs to be placed horizontally on the substrate, that is, the stacking direction of the LED is perpendicular to the stacking direction of the QNED device. In the prior art, the plane where the light-emitting layer in the LED structure is located is perpendicular to the stacking direction of the LED. In this way, when the LED structure is placed horizontally, the light-emitting surface of the LED structure is only the side surface of the light-emitting layer, the light-emitting area is small, and the display brightness is low. Referring to Figure 1, it is a structural schematic diagram of an LED in the prior art. The LED is a cylindrical structure, including a first semiconductor layer 101, a first light-emitting layer 102, and a second semiconductor layer 103 stacked in sequence. The plane where the first light-emitting layer 102 is located is perpendicular to the stacking direction. In this way, when the LED is placed horizontally on the substrate of the QNED structure, the light-emitting surface of the LED structure is only the side surface of the first light-emitting layer 102, and the light-emitting area is the product of the diameter and thickness of the first light-emitting layer 102, so the light-emitting area is small.

Based on the above technical problems, the embodiments of the present application provide a light-emitting element, a method for manufacturing a light-emitting element, and a display panel, including a first semiconductor structure, a first light-emitting layer, and a second semiconductor structure stacked in sequence in a first direction, the first semiconductor structure and the second semiconductor structure including a conductive element, when a voltage is applied, the conductive element can conduct electricity, thereby connecting the first semiconductor structure and the second semiconductor structure to make the light-emitting layer emit light, and the angle between the plane where the first light-emitting layer is located and the first direction can be set to be less than 90°, and the light-emitting direction is perpendicular to the first direction. Compared with the prior art, the plane where the first light-emitting layer is located is perpendicular to the first direction, resulting in the light-emitting surface being only the side surface of the first light-emitting layer. In the present application, there is an angle between the plane where the first light-emitting layer is located and the first direction, so that the light-emitting surface can be the side surface of the first light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, which can increase the light-emitting area, increase the proportion of vertical light emission, and improve the display brightness.

For ease of understanding, a light emitting element, a method for manufacturing a light emitting element, and a display panel provided in an embodiment of the present application are described in detail below with reference to the accompanying drawings.

In the embodiment of the present application, the light-emitting element may be an LED structure, and the light-emitting element may constitute a cylindrical structure or a prismatic structure. Referring to FIG2 , there is shown a schematic structural diagram of a cylindrical light-emitting element provided in the embodiment of the present application. The light-emitting element has a cylindrical structure, and the periphery of the light-emitting element may further include an insulating layer, which is not shown in FIG2 . The material of the insulating layer may be any one of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ , but is not limited thereto.

Referring to Figure 3, which is a cross-sectional schematic diagram along the A'A' direction of the light-emitting element in Figure 2, comprising a first semiconductor structure 101, a first light-emitting layer 102, and a second semiconductor structure 103 stacked in sequence, wherein a surface of the first semiconductor structure 101 facing away from the first light-emitting layer 102 and a surface of the second semiconductor structure 103 facing away from the first light-emitting layer 101 are parallel, so that the first semiconductor structure 101 and the second semiconductor structure 103 are in good contact with adjacent electrodes, respectively, and the first light-emitting layer 102 may be a multi-quantum well structure.

The first semiconductor structure 101 and the second semiconductor structure 103 include conductive elements. When voltage is applied to the first semiconductor structure 101 and the second semiconductor structure 103, the conductive elements can conduct electricity. The conductive elements can be N-type elements or P-type elements. The P-type conductive structure can be positively charged, and the N-type conductive structure can be negatively charged. Then, the first semiconductor structure 101 and the second semiconductor structure 103 are connected, and the first light-emitting layer 102 is powered by the first semiconductor structure 101 and the second semiconductor structure 103, so that the first light-emitting layer 102 emits light.

The two surfaces of the first light-emitting layer 102 are in contact with the first semiconductor structure 101 and the second semiconductor structure 103, respectively. The first semiconductor structure 101 and the second semiconductor structure 103 have opposite conductivity types, so that when a voltage is applied, holes and electrons from the two semiconductor structures are recombined, so that the first light-emitting layer 102 located between the two emits light. For example, if the conductivity type of the first semiconductor structure 101 is P-type, the conductivity type of the second semiconductor structure 103 is N-type, and the N-type semiconductor structure may include any semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN and InN, and is doped with a conductive element such as Si, Ge or Sn; if the conductivity type of the first semiconductor structure 101 is N-type, the conductivity type of the second semiconductor structure 103 is P-type, and the P-type semiconductor structure may include any semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN and InN, and is doped with a conductive element such as Mg.

The stacking direction of the light-emitting element can be recorded as the first direction, and the angle between the plane where the first light-emitting layer 102 is located and the first direction can be less than 90°. The light-emitting direction is perpendicular to the first direction. Compared with the prior art, the plane where the first light-emitting layer is located is perpendicular to the first direction, resulting in the light-emitting surface being only the side surface of the first light-emitting layer. In the present application, there is an angle between the plane where the first light-emitting layer is located and the first direction. In this way, the light-emitting surface can be the side surface of the first light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, which can increase the light-emitting area, increase the proportion of vertical light emission, and improve the display brightness. In addition, compared with the prior art, the light-emitting element is placed horizontally, and the electrodes are located at both ends of the light-emitting element, resulting in the light-emitting surface being the side surface of the light-emitting layer, and the electrodes will not affect the light-emitting brightness. In the present application, on the basis of placing the light-emitting element horizontally, the electrodes will not only not affect the light-emitting brightness, but also increase the light-emitting surface. The light-emitting surface also includes the surface adjacent to the side surface facing the light-emitting side, thereby improving the display brightness.

Specifically, when the angle between the plane where the first light-emitting layer 102 is located and the first direction is less than 90°, the angle between the plane where the first light-emitting layer 102 is located and the first direction may be greater than 45°, such as 50° or 70°, etc. Furthermore, the angle between the plane where the first light-emitting layer 102 is located and the first direction may be greater than 80°, such as 85°, which is beneficial to the production of the first light-emitting layer 102.

Specifically, the size of the first light-emitting layer 102 in the direction perpendicular to the plane where the surface is located (i.e., the thickness of the first light-emitting layer 102) can be greater than 10nm and less than 1um, and further, can be greater than 10nm and less than 100nm. This can achieve miniaturization of the light-emitting element, and the size of the light-emitting element in the direction perpendicular to the first direction can be greater than 1um and less than 10um.

In the embodiment of the present application, the number of light-emitting layers can be set as required, and multiple light-emitting layers can emit light, which can increase the light-emitting area and improve the display brightness. For example, two light-emitting layers can be set. Referring to FIG4, a structural schematic diagram of another light-emitting element provided in the embodiment of the present application is shown, and referring to FIG5, a cross-sectional schematic diagram of the light-emitting element in FIG4 along the A'A' direction is shown, including a first semiconductor structure 101, a first light-emitting layer 102, and a second semiconductor structure 103, and also including a third semiconductor structure 104 and a second light-emitting layer 105, the third semiconductor structure 104 is located between the first light-emitting layer 102 and the second semiconductor structure 103, and the second light-emitting layer 105 is located between the third semiconductor structure 104 and the second semiconductor structure 103. In this way, two light-emitting layers can be included in a light-emitting element, and both light-emitting layers can emit light, further increasing the light-emitting area and improving the display brightness.

In the embodiment of the present application, when the light-emitting element includes two light-emitting layers, the two surfaces of the first light-emitting layer 101 are in contact with the first semiconductor structure 101 and the third semiconductor structure 104, respectively, and the two surfaces of the second light-emitting layer 105 are in contact with the second semiconductor structure 103 and the third semiconductor structure 104, respectively. The first semiconductor structure 101 and the third semiconductor structure 104 have opposite conductivity types. When a voltage is applied, holes and electrons from the two semiconductor structures are recombined, so that the first light-emitting layer 102 located between the two emits light. The first semiconductor structure 101 and the second semiconductor structure 103 have the same conductivity type, that is, the conductivity type of the second semiconductor structure 103 is opposite to the conductivity type of the third semiconductor structure 104, so that the second light-emitting layer 105 located between the two emits light. For example, if the conductivity type of the first semiconductor structure 101 is P-type, the conductivity type of the second semiconductor structure 103 is N-type, and the conductivity type of the third semiconductor structure 104 is also P-type; if the conductivity type of the first semiconductor structure 101 is N-type, the conductivity type of the second semiconductor structure 103 is P-type, and the conductivity type of the third semiconductor structure 104 is also N-type. When the light emitting element is operating, a positive charge may be applied to the P-type conductive structure, and a negative charge may be applied to the N-type conductive structure.

Specifically, the angle between the plane where the second light-emitting layer 105 is located and the first direction can be less than 90°. In this way, the light-emitting surface of the second light-emitting layer 105 can be the side surface of the second light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, further increasing the light-emitting area, increasing the proportion of vertical light emission, and improving the display brightness.

Specifically, when the angle between the plane where the second light-emitting layer 105 is located and the first direction is less than 90°, the angle between the plane where the second light-emitting layer 105 is located and the first direction may also be greater than 45°. Furthermore, the angle between the plane where the second light-emitting layer 105 is located and the first direction may be greater than 80°.

In the embodiment of the present application, a first plane may be set, the first plane is parallel to the first direction, and the angle between the first plane and the plane where the first light-emitting layer 102 is located is equal to the angle between the plane where the first light-emitting layer 102 is located and the first direction. Referring to FIG3 , the dotted line represents the first plane, and the first plane is perpendicular to the paper surface. In the first plane, the distance between the orthographic projection of the first light-emitting layer 102 and the orthographic projection of the second light-emitting layer 105 is greater than or equal to 0, so that in the light-emitting direction, the first light-emitting layer 102 and the second light-emitting layer 105 have no overlapping area, which can avoid the phenomenon that both light-emitting layers in a local area emit light, and the light in this area is too bright, resulting in uneven light emission of the light-emitting element.

In addition, when the distance between the orthographic projection of the first light-emitting layer 102 and the orthographic projection of the second light-emitting layer 105 is greater than 0, there is a certain distance between the two light-emitting layers, so that the light emission of the two light-emitting layers can be controlled separately, which is convenient for controlling the light emission of the light-emitting layers according to actual needs. For example, when the brightness requirement is low, the first light-emitting layer 102 or the second light-emitting layer 105 can be controlled to emit light, and when the brightness requirement is high, both the first light-emitting layer 102 and the second light-emitting layer 105 can be controlled to emit light.

In the embodiment of the present application, the first light-emitting layer 102 and the second light-emitting layer 105 can be arranged in an eight-shaped shape, that is, one end of the first light-emitting layer facing the first direction can be located on different sides of the light-emitting element from one end of the second light-emitting layer facing the first direction. Referring to FIG5 , a first semiconductor structure 101, a first light-emitting layer 102, a third semiconductor structure 104, a second light-emitting layer 105, and a second semiconductor structure 103 are stacked in sequence along the first direction, and the two ends of the first light-emitting layer 102 are recorded as the A end and the B end, and the end facing the first direction is the A end, and the two ends of the second light-emitting layer 105 are recorded as the C end and the D end, and the end facing the first direction is the C end, and the A end of the first light-emitting layer 102 and the C end of the second light-emitting layer are located on different sides of the light-emitting element.

Specifically, the first light-emitting layer 102 and the second light-emitting layer 105 can be symmetrically distributed or asymmetrically distributed. When the first light-emitting layer 102 and the second light-emitting layer 105 are symmetrically distributed, the angle between the plane where the first light-emitting layer 102 is located and the first direction is equal to the angle between the plane where the second light-emitting layer 105 is located and the first direction, which can improve the uniformity of the light emission of the light-emitting element. Referring to FIG6, which is a schematic diagram of the structure of another light-emitting element provided in an embodiment of the present application, the first light-emitting layer 102 and the second light-emitting layer 105 are symmetrically distributed, the angle between the plane where the first light-emitting layer 102 is located and the first direction is α, and the angle between the plane where the second light-emitting layer 105 is located and the first direction is β, which are equal.

Specifically, when the first light-emitting layer 102 and the second light-emitting layer 105 are asymmetrically distributed, the angle between the plane where the first light-emitting layer 102 is located and the first direction is not equal to the angle between the plane where the second light-emitting layer 105 is located and the first direction. In this way, the light-emitting area can be further increased and the proportion of vertical light emission can be increased. Referring to FIG. 5, the first light-emitting layer 102 and the second light-emitting layer 105 are asymmetrically distributed, the angle between the plane where the first light-emitting layer 102 is located and the first direction is α, and the angle between the plane where the second light-emitting layer 105 is located and the first direction is β, and the two are not equal.

In the embodiment of the present application, the end of the first light-emitting layer 102 facing the first direction and the end of the second light-emitting layer 105 facing the first direction may be located on the same side of the light-emitting element. Referring to FIG7 , a schematic diagram of the structure of another light-emitting element provided in the embodiment of the present application is shown, and referring to FIG8 , a schematic cross-sectional view of the light-emitting element in FIG7 along the A'A' direction is shown, the two ends of the first light-emitting layer 102 are marked as the A end and the B end, and the end facing the first direction is the A end, and the two ends of the second light-emitting layer 105 are marked as the C end and the D end, and the end facing the first direction is the D end, and the A end of the first light-emitting layer 102 and the D end of the second light-emitting layer are located on the same side of the light-emitting element.

Specifically, the angle between the plane where the first light-emitting layer 102 is located and the first direction, and the angle between the plane where the second light-emitting layer 105 is located and the first direction, may be equal or unequal. Referring to FIG8 , the two angles α and β are unequal, which can further increase the light-emitting area and increase the vertical light-emitting ratio. Referring to FIG9 , which is a schematic diagram of the structure of another light-emitting element provided in an embodiment of the present application, the first light-emitting layer 102 and the second light-emitting layer 105 are parallel, and the two angles α and β are equal, which can improve the uniformity of the light emission of the light-emitting element.

In the embodiment of the present application, three light-emitting layers may be provided. Referring to FIG10 , a schematic diagram of the structure of another light-emitting element provided in the embodiment of the present application is shown. Referring to FIG11 , a schematic diagram of a cross-section along the A’A’ direction of the light-emitting element in FIG10 is shown, including a first semiconductor structure 101, a first light-emitting layer 102, a third semiconductor structure 104, a second light-emitting layer 105, a fourth semiconductor structure 106, a third light-emitting layer 107, and a second semiconductor structure 103 stacked in sequence along a first direction, thereby increasing the light-emitting area and improving the display brightness.

An embodiment of the present application provides a light-emitting element, including a first semiconductor structure, a first light-emitting layer, and a second semiconductor structure stacked in sequence in a first direction. The first semiconductor structure and the second semiconductor structure include a conductive element. When a voltage is applied, the conductive element can conduct electricity, thereby connecting the first semiconductor structure and the second semiconductor structure to make the light-emitting layer emit light. The angle between the plane where the first light-emitting layer is located and the first direction can be set to be less than 90°, and the light-emitting direction is perpendicular to the first direction. Compared with the prior art, the plane where the first light-emitting layer is located is perpendicular to the first direction, resulting in the light-emitting surface being only the side surface of the first light-emitting layer. In the present application, there is an angle between the plane where the first light-emitting layer is located and the first direction. In this way, the light-emitting surface can be the side surface of the first light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, which can increase the light-emitting area, increase the proportion of vertical light emission, and improve the display brightness.

Based on the above light-emitting elements, an embodiment of the present application further provides a method for manufacturing a light-emitting element. Referring to FIG12 , a flow chart of a method for manufacturing a light-emitting element provided in an embodiment of the present application is shown. The method may include the following steps.

S101, providing a substrate.

In an embodiment of the present application, a substrate 108 may be provided, and the upper surface and the lower surface of the substrate may be parallel. Referring to Figures 13-20, a structural schematic diagram of a light-emitting element manufacturing process provided in an embodiment of the present application is shown. As can be seen from Figure 13, the upper and lower surfaces of the substrate 108 are parallel; the upper and lower surfaces of the substrate 108 may also form a certain angle between them. Referring to Figure 14, the upper and lower surfaces of the substrate 108 form a certain angle between them.

The substrate 108 is used to support the film layer thereon, and may be a rigid substrate, for example, may be one of insulating substrates such as a glass substrate, a quartz substrate, a glass ceramic substrate, and a crystallized glass substrate, or may be a semiconductor substrate, such as silicon, germanium, silicon nitride, etc. When the first semiconductor structure, the first light-emitting layer, and the second semiconductor structure are based on silicon nitride material, the material of the substrate 108 may be gallium nitride, which is conducive to forming a first semiconductor structure with better quality.

S102, forming a first semiconductor structure, a first light-emitting layer and a second semiconductor structure in sequence on a substrate.

In the embodiment of the present application, a first semiconductor structure 101, a first light-emitting layer 102 and a second semiconductor structure 103 may be sequentially formed on a substrate 108. The first semiconductor structure 101 and the second semiconductor structure 103 include conductive elements that can conduct electricity, thereby conducting electricity between the first semiconductor structure 101 and the second semiconductor structure 103, and causing the first light-emitting layer 102 to emit light.

The angle between the plane where the first light-emitting layer is located and the first direction can be less than 90°. The first direction is along the stacking direction of the first semiconductor structure 101, the first light-emitting layer 102 and the second semiconductor structure 103. The light-emitting direction is perpendicular to the first direction. Compared with the prior art, the plane where the first light-emitting layer is located is perpendicular to the first direction, resulting in the light-emitting surface being only the side surface of the first light-emitting layer. In the present application, there is an angle between the plane where the first light-emitting layer is located and the first direction. In this way, the light-emitting surface can be the side surface of the first light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, which can increase the light-emitting area, increase the proportion of vertical light emission, and improve the display brightness.

In the embodiment of the present application, the plane where the first light-emitting layer 102 is located is parallel to the lower surface of the substrate 108. Before forming the second semiconductor structure 103 on the first light-emitting layer 102, it can also include: removing the substrate 108, or adjusting the direction of the substrate 108 so that the lower surface of the first semiconductor structure 101 is along a horizontal plane.

In one embodiment, the deposition rate at different positions of the semiconductor structure can be controlled so that the size of the semiconductor structure in the first direction varies. The first direction is perpendicular to the surface of the first semiconductor structure 101 that is away from the first light-emitting layer 102. In this way, when the first light-emitting layer 102 is formed on the first semiconductor structure 101, the angle between the plane where the first light-emitting layer 101 is located and the first direction can be made less than 90°, thereby increasing the light output area.

Specifically, during the formation of the first semiconductor structure, the size of the first semiconductor structure 101 in the first direction can be different by controlling the deposition rate at different positions. Similarly, during the formation of the second semiconductor structure 103, the size of the second semiconductor structure 103 in the first direction can be different by controlling the deposition rate at different positions. The first semiconductor structure 101 and the second semiconductor structure 103 can be formed by deposition through chemical vapor deposition (CVD), and the deposition rate can be achieved by controlling the flow rate of the reaction gas at different positions.

Referring to FIG15 , there is a certain angle between the upper and lower surfaces of the substrate 108, and a first semiconductor structure 101 is formed on the substrate 108. The sizes of the first semiconductor structure 101 in the first direction are different. In FIG16 , a first light-emitting layer 102 with the same size in the first direction is formed on the first semiconductor structure 101. Then, the substrate 108 is removed, and a second semiconductor structure 103 is formed on the first light-emitting layer 102. As can be seen from FIG17 , it includes a first semiconductor structure 101, a first light-emitting layer 102 and a second semiconductor structure 103 stacked in sequence, and the sizes of the second semiconductor structure 103 in the first direction are different. The upper surface of the second semiconductor structure 103 is parallel to the lower surface of the first semiconductor structure 101.

In one embodiment, two semiconductor layers and a first light-emitting layer having the same size along a first direction at different positions may be formed, the first direction being perpendicular to the surface of the first semiconductor structure 101 away from the first light-emitting layer 102, and then the two semiconductor layers are thinned to obtain a semiconductor structure having inconsistent sizes along the first direction at different positions, so that the angle between the plane where the first light-emitting layer is located and the first direction is less than 90°, thereby increasing the light-emitting area. Specifically, the thinning process may be performed by chemical mechanical polish (CMP), the thinning direction being perpendicular to the first direction, and the thinning thickness at different positions may be different.

Specifically, the first semiconductor structure 101, the first light-emitting layer 102, and the second semiconductor structure 103 are sequentially formed on the substrate, which can be specifically: the first semiconductor layer 1011, the first light-emitting layer 102, and the second semiconductor layer 1031 are sequentially formed on the substrate, as shown in FIG. 18, including the first semiconductor layer 1011, the first light-emitting layer 102, and the second semiconductor layer 1031 stacked on the substrate 108. Then the substrate 108 is removed, and then the first semiconductor layer 1011 is thinned to obtain the first semiconductor structure 101, and the second semiconductor layer 1031 is thinned to obtain the second semiconductor structure 103, so that the first semiconductor structure 101 has different sizes in the first direction, and the second semiconductor structure 103 has different sizes in the first direction. Referring to FIG18 , in which two dotted lines are parallel, the first semiconductor layer 1011 and the second semiconductor layer 1031 are thinned along the dotted lines in the figure to obtain the first semiconductor structure 101 and the second semiconductor structure 103. The structure between the two dotted lines includes the first semiconductor structure 101, the first light-emitting layer 102 and the second semiconductor structure 103 stacked in sequence. Referring to FIG19 , the structure after the thinning process includes the first semiconductor structure 101, the first light-emitting layer 102 and the second semiconductor structure 103.

In one embodiment, a thinning process may be performed each time a semiconductor layer is formed to obtain a corresponding semiconductor structure, so that the angle between the plane where the first light-emitting layer 102 is located and the first direction is less than 90°, and the first direction is perpendicular to the surface of the first semiconductor structure 101 away from the first light-emitting layer 102, thereby increasing the light output area.

Specifically, the first semiconductor structure 101 is formed on the substrate 108, which can be specifically as follows: a first semiconductor layer 1011 is formed on the substrate 108, and the size of the first semiconductor layer 1011 is consistent along the first direction, and then, the first semiconductor layer 1011 is thinned to obtain the first semiconductor structure 101, so that the size of the first semiconductor structure 101 in the first direction is different, and then a first light-emitting layer 102 is formed on the first semiconductor structure 101, and then, a second semiconductor structure 103 is formed on the first light-emitting layer 102, which can be specifically as follows: a second semiconductor layer 1031 is formed on the first light-emitting layer 102, and the size of the second semiconductor layer 1031 is consistent along the first direction, and the second semiconductor layer 1031 is thinned to obtain the second semiconductor structure 103, so that the size of the second semiconductor structure 103 in the first direction is different.

In the embodiment of the present application, a light-emitting element may include multiple light-emitting layers, thereby further increasing the light-emitting area and improving the display brightness. For example, two light-emitting layers may be included. Specifically, before forming the second semiconductor structure 103 on the first light-emitting layer 102, the following may be included: forming a third semiconductor structure 104 on the first light-emitting layer 102, and forming a second light-emitting layer 105 on the third semiconductor structure 104, and the second semiconductor structure 103 is formed on the second light-emitting layer 105. As shown in FIG. 20, two light-emitting layers are included, namely, the first light-emitting layer 102 and the second light-emitting layer 105.

In one of the embodiments, during the formation of the third semiconductor structure, the size of the third semiconductor structure in the first direction can be different by controlling the deposition rate at different positions; or, the third semiconductor structure is formed on the first light-emitting layer, which can be specifically as follows: a third semiconductor layer is formed on the first light-emitting layer, the size of the third semiconductor layer in the first direction is the same at different positions, and then the third semiconductor layer is thinned to obtain the third semiconductor structure, so that the size of the third semiconductor structure in the first direction is different.

S103, after removing the substrate, cutting the second semiconductor structure, the first light-emitting layer and the first semiconductor structure along the first direction to obtain a plurality of light-emitting elements.

In the embodiment of the present application, after removing the substrate 108, the second semiconductor structure 103, the first light emitting layer 102 and the first semiconductor structure 101 can be cut along the first direction to obtain multiple light emitting elements. Referring to FIG. 19, multiple light emitting elements can be obtained by cutting along the vertical dotted line in the figure.

When a light-emitting element includes two light-emitting layers, that is, a first light-emitting layer and a second light-emitting layer, the second semiconductor structure, the first light-emitting layer and the first semiconductor structure are cut along the first direction, which can be specifically: the second semiconductor structure, the second light-emitting layer, the third semiconductor structure, the first light-emitting layer and the first semiconductor structure are cut along the first direction. Referring to FIG. 20 , cutting along the dotted line can obtain multiple light-emitting elements.

The embodiment of the present application provides a method for manufacturing a light-emitting element, providing a substrate, taking the vertical direction of the plane where the upper surface of the substrate is located as the first direction, and sequentially forming a first semiconductor structure, a first light-emitting layer, and a second semiconductor structure on the substrate, wherein the first semiconductor structure and the second semiconductor structure include a conductive element, and when a voltage is applied, the conductive element can conduct electricity, thereby connecting the first semiconductor structure and the second semiconductor structure to make the light-emitting layer emit light, and the angle between the plane where the first light-emitting layer is located and the first direction can be set to be less than 90°, and the light-emitting direction is perpendicular to the first direction. After removing the substrate, the second semiconductor structure, the first light-emitting layer, and the first semiconductor structure are cut along the first direction to obtain a plurality of light-emitting elements. Compared with the prior art, the plane where the first light-emitting layer is located is perpendicular to the first direction, resulting in the light-emitting surface being only the side surface of the first light-emitting layer. In the present application, there is an angle between the plane where the first light-emitting layer is located and the first direction, so that the light-emitting surface can be the side surface of the first light-emitting layer and the surface adjacent to the side surface facing the light-emitting side, which can increase the light-emitting area, increase the proportion of vertical light-emitting, and improve the display brightness.

The embodiment of the present application also provides a display panel. Referring to FIG. 21, it is a schematic diagram of the structure of a display panel provided by the embodiment of the present application, including a display substrate 200, a light-emitting element 100, a first electrode 300 and a second electrode 400. The light-emitting element 100 is located on one side of the display substrate 200. The stacking direction of the first semiconductor structure 101, the first light-emitting layer 102 and the second semiconductor structure 103 in the light-emitting element 100 is parallel to the plane where the display substrate 200 is located. The first electrode 300 is in contact with the first semiconductor structure 101, and the second electrode 400 is in contact with the second semiconductor structure 103. The first electrode 300 and the second electrode 400 are used to supply power to the first light-emitting layer 102 so that the first light-emitting layer 102 emits light.

Specifically, when the light-emitting element includes two light-emitting layers, the light-emitting element also includes a third semiconductor structure 104 and a second light-emitting layer 105, the third semiconductor structure 104 is located between the first light-emitting layer 102 and the second semiconductor structure 103, the second light-emitting layer 105 is located between the third semiconductor structure 104 and the second semiconductor structure 103, the angle between the plane where the second light-emitting layer 105 is located and the first direction is less than 90°, and the display panel may also include a third electrode 500 in contact with the third semiconductor structure 104. Referring to FIG22, a schematic diagram of the structure of a display panel provided in an embodiment of the present application includes a third electrode 500 connected to the third semiconductor structure 104. The first electrode 300 and the third electrode 500 are used to supply power to the first light-emitting layer 102 so that the first light-emitting layer 102 emits light; the third electrode 500 and the second electrode 400 are used to supply power to the second light-emitting layer 105 so that the second light-emitting layer 105 emits light.

Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the method embodiment, since it is basically similar to the device embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the device embodiment.

The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims (22)

1. A light-emitting element, comprising a first semiconductor structure, a first light-emitting layer, and a second semiconductor structure stacked in sequence in a first direction; The first semiconductor structure and the second semiconductor structure include conductive elements; a surface of the first semiconductor structure facing away from the first light-emitting layer and a surface of the second semiconductor structure facing away from the first light-emitting layer are parallel and perpendicular to the first direction; The angle between the plane where the first light-emitting layer is located and the first direction is less than 90°, and the first light-emitting layers extend along the same plane. 2. The light emitting element according to claim 1, further comprising: A third semiconductor structure is located between the first light-emitting layer and the second semiconductor structure, and a second light-emitting layer is located between the third semiconductor structure and the second semiconductor structure; the angle between the plane where the second light-emitting layer is located and the first direction is less than 90°. 3. The light-emitting element according to claim 2 is characterized in that, in a first plane, a distance between the orthographic projection of the first light-emitting layer and the orthographic projection of the second light-emitting layer is greater than or equal to 0; the first plane is parallel to the first direction, and the angle between the first plane and the plane where the first light-emitting layer is located is equal to the angle between the plane where the first light-emitting layer is located and the first direction. 4 . The light-emitting element according to claim 3 , wherein an end of the first light-emitting layer facing the first direction and an end of the second light-emitting layer facing the first direction are located on different sides of the light-emitting element. 5 . The light-emitting element according to claim 4 , wherein an angle between a plane where the first light-emitting layer is located and the first direction is equal to an angle between a plane where the second light-emitting layer is located and the first direction. 6 . The light-emitting element according to claim 3 , wherein an end of the first light-emitting layer facing the first direction and an end of the second light-emitting layer facing the first direction are located on the same side of the light-emitting element. 7. The light-emitting element according to claim 2 is characterized in that two surfaces of the first light-emitting layer are in contact with the first semiconductor structure and the third semiconductor structure respectively, two surfaces of the second light-emitting layer are in contact with the second semiconductor structure and the third semiconductor structure respectively, the first semiconductor structure and the third semiconductor structure have opposite conductivity types, and the first semiconductor structure and the second semiconductor structure have the same conductivity type. 8 . The light-emitting element according to claim 1 , wherein two surfaces of the first light-emitting layer are in contact with the first semiconductor structure and the second semiconductor structure respectively, and the first semiconductor structure and the second semiconductor structure have opposite conductivity types. 9. The light-emitting element according to any one of claims 2 to 7, characterized in that the angle between the plane where the first light-emitting layer is located and the first direction is greater than 45°, and/or the angle between the plane where the second light-emitting layer is located and the first direction is greater than 45°. 10 . The light-emitting element according to claim 9 , wherein the angle between the plane where the first light-emitting layer is located and the first direction is greater than 80°, and/or the angle between the plane where the second light-emitting layer is located and the first direction is greater than 80°. 11 . The light-emitting element according to claim 1 , wherein the light-emitting element has a cylindrical structure or a prismatic structure. 12 . The light-emitting element according to claim 1 , wherein a size of the first light-emitting layer in a direction perpendicular to the plane where the surface is located is greater than 10 nm and less than 1 um. 13 . The light-emitting element according to claim 1 , wherein a size of the light-emitting element in a direction perpendicular to the first direction is greater than 1 um and less than 10 um. 14. A method for manufacturing a light emitting element, comprising: providing a substrate; A first semiconductor structure, a first light-emitting layer, and a second semiconductor structure are sequentially formed on the substrate; the first semiconductor structure and the second semiconductor structure include conductive elements; the angle between the plane where the first light-emitting layer is located and a first direction is less than 90°; and the first direction is along the stacking direction of the first semiconductor structure, the first light-emitting layer, and the second semiconductor structure; After removing the substrate, the second semiconductor structure, the first light-emitting layer and the first semiconductor structure are cut along the first direction to obtain a plurality of light-emitting elements. 15. The method according to claim 14 is characterized in that the first direction is perpendicular to the surface of the first semiconductor structure away from the first light-emitting layer, and during the formation of the first semiconductor structure, the deposition rates at different positions are controlled so that the size of the first semiconductor structure in the first direction is different; during the formation of the second semiconductor structure, the deposition rates at different positions are controlled so that the size of the second semiconductor structure in the first direction is different. 16. The method according to claim 14, wherein the first direction is perpendicular to a surface of the first semiconductor structure away from the first light-emitting layer, and forming the first semiconductor structure on the substrate comprises: forming a first semiconductor layer on the substrate; Performing a thinning process on the first semiconductor layer to obtain the first semiconductor structure, so that the first semiconductor structure has different sizes in the first direction; The second semiconductor structure is formed on the first light emitting layer, comprising: forming a second semiconductor layer on the first light emitting layer; The second semiconductor layer is thinned to obtain the second semiconductor structure, so that the sizes of the second semiconductor structure in the first direction are different. 17. The method according to claim 14, characterized in that the first direction is perpendicular to a surface of the first semiconductor structure away from the first light-emitting layer, and the first semiconductor structure, the first light-emitting layer and the second semiconductor structure are sequentially formed on the substrate, comprising: forming a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer in sequence on the substrate; After removing the substrate, the first semiconductor layer is thinned to obtain a first semiconductor structure, and the second semiconductor layer is thinned to obtain a second semiconductor structure, so that the first semiconductor structure has different sizes in the first direction and the second semiconductor structure has different sizes in the first direction. 18. The method according to any one of claims 14 to 17, characterized in that before forming the second semiconductor structure on the first light-emitting layer, the method further comprises: forming a third semiconductor structure on the first light-emitting layer, and forming a second light-emitting layer on the third semiconductor structure, wherein the second semiconductor structure is formed on the second light-emitting layer; The cutting of the second semiconductor structure, the first light emitting layer and the first semiconductor structure along the first direction comprises: The second semiconductor structure, the second light emitting layer, the third semiconductor structure, the first light emitting layer and the first semiconductor structure are cut along the first direction. 19. The method according to claim 18, characterized in that, during the formation of the third semiconductor structure, the deposition rates at different positions are controlled so that the size of the third semiconductor structure in the first direction is different; or, A third semiconductor structure is formed on the first light emitting layer, comprising: forming a third semiconductor layer on the first light emitting layer; The third semiconductor structure is obtained by thinning the third semiconductor layer, so that the sizes of the third semiconductor structure in the first direction are different. 20. The method according to any one of claims 14 to 17, characterized in that the plane where the first light-emitting layer is located is parallel to the lower surface of the substrate, and before forming the second semiconductor structure on the first light-emitting layer, the method further comprises: The substrate is removed, or the direction of the substrate is adjusted so that the lower surface of the first semiconductor structure is along a horizontal plane. 21. A display panel, comprising: Display substrate; A light-emitting element according to any one of claims 1 to 13, located on one side of the display substrate, wherein a stacking direction of the first semiconductor structure, the first light-emitting layer and the second semiconductor structure in the light-emitting element is parallel to a plane where the display substrate is located; a first electrode in contact with the first semiconductor structure; A second electrode is in contact with the second semiconductor structure. 22. The display panel according to claim 21, characterized in that if the light-emitting element includes a third semiconductor structure located between the first light-emitting layer and the second semiconductor structure, and a second light-emitting layer located between the third semiconductor structure and the second semiconductor structure; the angle between the plane where the second light-emitting layer is located and the first direction is less than 90°; The display panel further includes: A third electrode is in contact with the third semiconductor structure.