CN115296639A - Bottom electrode excitation type surface acoustic wave device structure - Google Patents
Bottom electrode excitation type surface acoustic wave device structure Download PDFInfo
- Publication number
- CN115296639A CN115296639A CN202211053125.1A CN202211053125A CN115296639A CN 115296639 A CN115296639 A CN 115296639A CN 202211053125 A CN202211053125 A CN 202211053125A CN 115296639 A CN115296639 A CN 115296639A
- Authority
- CN
- China
- Prior art keywords
- layer
- acoustic wave
- surface acoustic
- wave device
- substrate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a bottom electrode excitation type surface acoustic wave device structure, which comprises a supporting substrate layer, an insulating layer and a piezoelectric material layer; the support substrate layer is provided with the insulating layer, the thickness of the insulating layer is smaller than that of the support substrate layer, the piezoelectric material layer is arranged on the insulating layer, interdigital transducer structures and input/output electrode structures are arranged in the insulating layer at intervals, the connecting end of the input/output electrode structure extends out of the piezoelectric material layer or the support substrate layer and forms a welding ball or a welding spot, and the welding ball or the welding spot is located on the surface of the support substrate layer or the surface of the piezoelectric material layer. The invention can effectively reduce the influence of external environment on the surface acoustic wave device, can also realize temperature compensation effect to control the temperature drift of the device within a proper range, and in addition, the Q value of related devices is greatly improved and the invention is suitable for the silicon-based semiconductor processing technology.
Description
Technical Field
The invention relates to the technical field of surface acoustic wave filters, in particular to a bottom electrode excitation type surface acoustic wave device structure.
Background
A Surface Acoustic Wave (SAW) filter is an acoustic device used in the field of communications, radio, radar and other related radio frequency front ends.
At this stage, the related SAW device mainly includes: the traditional SAW, TC-SAW, IHP-SAW and the like have various structures. Wherein TC-SAW is formed by coating SiO on the base SAW structure 2 The acoustic device for realizing the temperature drift inhibition function in a temperature compensation film layer mode is widely applied to communication terminals; IHP-SAW is also called TF-SAW, and is a novel acoustic device which optimizes and modifies a piezoelectric substrate through a multilayer film structure and finally achieves higher performance. In any structure, the SAW device basically has the same working principle, the comb-tooth-shaped interdigital transducer is prepared on the surface of a piezoelectric material or a substrate with a piezoelectric material layer through a semiconductor processing technology, and the electric-acoustic-electric propagation of signals is realized through the piezoelectric and inverse piezoelectric effects of the piezoelectric layer, so that the screening of communication signals is realized. Most commonly used piezoelectric materials are lithium tantalate (LiTaO) 3 LT), lithium niobate (LiNbO) 3 LN), aluminum nitride (AlN), zinc oxide (ZnO), etc., with LT and LN being the most common. Most LT and LN are artificially synthesized materials, and have high plasticity and strong corrosion resistance, so that the related materials are difficult to refine, for example, when a through hole process is adopted to perform hole drilling on LT and LN, the conventional machining depth can only be maintained between hundreds of nanometers and 1 micrometer, and micrometer-grade machining is difficult to realize. In addition, the key material parameters such as the thermal expansion coefficient of the related materials are incompatible with silicon-based materials, so that the piezoelectric materials are difficult to integrate with the mainstream silicon-based semiconductor process, which causes the related devices to have natural disadvantages in the aspects of integration and miniaturization. In addition, for most SAW devices, the comb structure of the effective functional area is located on the outermost surface of the chip, which is not only easily affected by external environment changes in the propagation of sound waves, but also easily damaged by external redundancy without protection, thereby affecting the overall performance of the device, so that related devices hardly have any bare chipsThe scheme can be applied to the communication field. This further limits the applications of the related devices in miniaturization and integration.
Therefore, the technical personnel in the field are dedicated to develop a bottom electrode excitation type surface acoustic wave device structure, the influence of the external environment on the surface acoustic wave device is reduced, the temperature compensation effect can be realized to control the temperature drift of the device within a proper range, and in addition, the Q value of related devices is greatly improved and the structure is suitable for the silicon-based semiconductor processing technology.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a bottom electrode excitation type surface acoustic wave device structure, which reduces the influence of external environment on the surface acoustic wave device, can realize temperature compensation effect to control the temperature drift of the device within a proper range, and in addition, the Q value of related devices is greatly improved and the structure is suitable for a silicon-based semiconductor processing technology.
The technical scheme for solving the technical problems is as follows: a bottom electrode excitation type surface acoustic wave device structure comprises a supporting substrate layer, an insulating layer and a piezoelectric material layer;
the support substrate layer is provided with the insulating layer, the thickness of the insulating layer is smaller than that of the support substrate layer, the piezoelectric material layer is arranged on the insulating layer, interdigital transducer structures and input/output electrode structures are arranged in the insulating layer at intervals, the connecting end of the input/output electrode structure extends out of the piezoelectric material layer or the support substrate layer and forms a welding ball or a welding spot, and the welding ball or the welding spot is positioned on the surface of the support substrate layer or the surface of the piezoelectric material layer
The invention has the beneficial effects that: arrange interdigital transducer structure and input/output electrode structure in piezoelectric material layer below, with comb-tooth transducer structure by the piezoelectric material layer of device top and the insulating layer of below, support the substrate layer and wrap up, the shortcoming that the surface acoustic wave device received external environment influence easily has been solved, also can realize simultaneously that the temperature compensation effect floats in suitable scope with the temperature of control device, the device also satisfies the demand of carrying out follow-up integration with the bare chip mode, relevant device not only can be compatible with silicon-based technology and be favorable to follow-up realization to integrate, more can further promote the Q value and the electromechanical coupling coefficient of device, be favorable to promoting the performance of device.
On the basis of the technical scheme, the invention can be improved as follows.
Furthermore, a first through hole is formed in the piezoelectric material layer, a first electroplating material is filled in the first through hole, and two ends of the first electroplating material are respectively communicated with the input/output electrode structure and the solder ball or the solder joint.
The further scheme has the beneficial effects that the electroplating materials in the piezoelectric material layer are correspondingly adjusted according to different requirements, and the silicon-based process compatibility is further improved.
Furthermore, a second through hole is formed in the supporting substrate layer, an insulating isolation layer isolated from the supporting substrate layer is arranged in the second through hole, a second electroplating material is filled in the insulating isolation layer, and two ends of the second electroplating material are respectively connected with the input/output electrode structure and the welding balls or welding spots.
The further scheme has the beneficial effects that the electroplating material in the supporting substrate layer is correspondingly adjusted according to different requirements, and the silicon-based process compatibility is further improved.
Furthermore, the solder balls or the solder joints further comprise a metallization layer arranged on the surface of the piezoelectric material layer or the surface of the support substrate layer, and the metallization layer is provided with the solder balls or the solder joints led out by the electrodes.
The further scheme has the advantage that the metalized layer and the solder balls or solder points led out by the electrodes are used for being connected with an external device.
Furthermore, grounding electrodes are arranged on two side walls of the metalized layer.
The ground electrode is used for grounding.
Further, a functional layer is arranged between the support substrate layer and the insulating layer.
The beneficial effect of adopting the further scheme is that corresponding functional layers are arranged according to different functions, and the universality of the surface acoustic wave device is further improved.
Further, the support substrate layer is made of one material including but not limited to a silicon-based material, a SiC material, and a sapphire substrate material.
The further scheme has the beneficial effects that the supporting substrate layer is made of different materials according to different requirements, and the requirements of high-end acoustic devices and high integration are met.
Further, the functional layer is made of one or more composite film layers including but not limited to AlN, diamond and hexagonal boron nitride, or is made of a multi-layer composite film layer structure matched by Bragg reflection gate type high-low sound velocity materials.
The further scheme has the beneficial effects that the functional layer is made of different materials according to different requirements, and the requirements of high-end acoustic devices and high integration are met.
Further, the piezoelectric material layer is made of one material including, but not limited to, LT and LN piezoelectric materials of respective cut types, alN materials, znO materials.
The piezoelectric material layer is made of different materials according to different requirements, and the requirements of high-end acoustic devices and high integration are met.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of the present invention;
fig. 3 is a schematic top view of a structure according to an embodiment of the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
10. a support substrate layer; 20. a functional layer; 30. an insulating layer; 40. a layer of piezoelectric material; 50. an interdigital transducer structure; 51. an input/output electrode structure; 52. a ground electrode; 60. a first plating material; 61. an insulating isolation layer; 62. a second plating material; 70. a metallization layer; 80. and (7) welding points.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that the terms "center", "length", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "inner", "outer", "peripheral side", "circumferential", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and simplicity of description, and do not indicate or imply that the system or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise.
In the present invention, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being permanently connected, detachably connected, or integral; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
As shown in fig. 1, 2 and 3, a bottom electrode excitation type surface acoustic wave device structure comprises a supporting substrate layer 10, an insulating layer 30 and a piezoelectric material layer 40; the insulating layer 30 is provided on the support substrate layer 10, and the surface of the support substrate layer 10 and the surface of the insulating layer 40 are in close contact. The thickness of the insulating layer 30 is smaller than that of the supporting substrate layer 10, the piezoelectric material layer 40 is arranged on the insulating layer 30, the piezoelectric material layer 30 is tightly attached to the surface of the insulating layer 30, the interdigital transducer structures 50 and the input/output electrode structures 51 are arranged in the insulating layer 30 at intervals, the connecting ends of the input/output electrode structures 51 extend out of the piezoelectric material layer 40 or the supporting substrate layer 10 to form solder balls or solder points 80, and the solder balls or the solder points 80 are located on the surface of the supporting substrate layer 10 or the surface of the piezoelectric material layer 40.
In the invention, the interdigital transducer structure 50 and the input/output electrode structure 51 are arranged below the piezoelectric material layer 40, the comb-shaped transducer structure is wrapped by the piezoelectric material layer 40 above the device, the insulating layer 30 below the piezoelectric material layer and the supporting substrate layer 10, the defect that the surface acoustic wave device is easily influenced by the external environment is solved, meanwhile, the temperature compensation effect can be realized to control the temperature drift of the device within a proper range, the device also meets the requirement of subsequent integration in a bare chip mode, in addition, the piezoelectric material layer 40 in the structure is only hundreds of nanometers, the electrode end of the comb-shaped transducer can be led out through the piezoelectric material and can also be led out through SiO 2 And the material of the supporting substrate layer 10 is led out, and can be specifically adjusted according to requirements, so that silicon-based process compatibility can be realized. The related device can be compatible with a silicon-based process, and is beneficial to realizing subsequent integration, the Q value and the electromechanical coupling coefficient of the device can be further improved, and the performance of the device is favorably improved. The device with the structure has a temperature compensation effect, can realize low temperature drift and even zero temperature drift, is compatible with a silicon-based process in the development of related devices, is favorable for the integrated development of a micro-acoustic device, has certain improvement on a Q value and an electromechanical coupling coefficient in the related structure, and is suitable for the research and development of high-end advanced acoustic devices.
Example one
As shown in fig. 1 and 3, a first through hole is formed in the piezoelectric material layer 40, the piezoelectric material layer 40 is provided with the first through hole by laser, after the first through hole is cleaned, the first through hole is filled with a first electroplating material 60 by electroplating, sputtering, or the like, so that two ends of the first electroplating material 60 are respectively conducted with the input/output electrode structure 51 and a solder ball or solder joint 80, and the solder ball or solder joint 80 is conducted for connection with an external device.
Example two
As shown in fig. 2 and 3, a second through hole is formed in the supporting substrate layer 10, the second through hole may also be formed by laser, after the second through hole is cleaned, an insulating isolation layer 61 isolated from the supporting substrate layer 10 is formed in the second through hole, the insulating isolation layer 61 may be formed by electroplating, a second electroplating material 62 is filled in the insulating isolation layer 61, two ends of the second electroplating material 62 are respectively conducted with the input/output electrode structure 51 and a solder ball or a solder joint 80, and the solder ball or the solder joint 80 is conducted for connection with an external device.
In the embodiment, the supporting substrate layer 10 is made of one material including, but not limited to, a silicon-based material (high-resistivity silicon), a SiC material, and a sapphire substrate material, and a functional layer material, such as an AlN high acoustic velocity layer, diamond, etc., may also be deposited on the above material according to the corresponding requirements.
In some embodiments, the solder balls or pads 80 further include a metallization layer 70 disposed on the surface of the piezoelectric material layer 40 or the surface of the supporting substrate layer 10, the metallization layer 70 is an under-ball metallization layer and includes pads, the metallization layer 70 is further provided with solder balls or pads 80 from which electrodes are led out, the solder balls or pads 80 are convenient for connecting with an external device, the solder balls or pads 80 can be made of gold, solder, or the like, and the ground electrodes 52 are disposed on two sidewalls of the metallization layer 70. The piezoelectric material layer 40 is made of one material including but not limited to LT and LN piezoelectric materials, alN materials, and ZnO materials of various cut types, and other related piezoelectric materials are also adopted.
In another embodiment, a functional layer 20 is further disposed between the supporting substrate layer 10 and the insulating layer 30, different functional layers 20 are selected according to the practical application of the surface acoustic wave, and the functional layer 20 is made of a composite film including one or more of AlN, diamond, and hexagonal boron nitride, or a multi-layer composite film structure using bragg reflection grating type high-low sound velocity materials for matching, or the like.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. A bottom electrode excitation type surface acoustic wave device structure is characterized in that: comprises a supporting substrate layer (10), an insulating layer (30) and a piezoelectric material layer (40);
the piezoelectric substrate layer structure is characterized in that the insulating layer (30) is arranged on the supporting substrate layer (10), the thickness of the insulating layer (30) is smaller than that of the supporting substrate layer (10), the piezoelectric material layer (40) is arranged on the insulating layer (30), interdigital transducer structures (50) and input/output electrode structures (51) are arranged in the insulating layer (30) at intervals, the connecting ends of the input/output electrode structures (51) extend out of the piezoelectric material layer (40) or the supporting substrate layer (10) and form solder balls or solder points (80), and the solder balls or the solder points (80) are located on the surface of the supporting substrate layer (10) or the surface of the piezoelectric material layer (40).
2. The bottom electrode excitation type surface acoustic wave device structure according to claim 1, wherein: the piezoelectric material layer (40) is internally provided with a first through hole, a first electroplating material (60) is filled in the first through hole, and two ends of the first electroplating material (60) are respectively communicated with the input/output electrode structure (51) and the solder ball or the solder joint (80).
3. The bottom electrode excited surface acoustic wave device structure as claimed in claim 1, wherein: the structure is characterized in that a second through hole is formed in the supporting substrate layer (10), an insulating isolation layer (61) isolated from the supporting substrate layer (10) is arranged in the second through hole, a second electroplating material (62) is filled in the insulating isolation layer (61), and two ends of the second electroplating material (62) are connected with the input/output electrode structure (51) and the solder balls or the welding points (80) respectively.
4. The bottom electrode excited surface acoustic wave device structure as claimed in any one of claims 1 to 3, wherein: the solder balls or the welding spots (80) further comprise a metallization layer (70) arranged on the surface of the piezoelectric material layer (40) or the surface of the support substrate layer (10), and the solder balls or the welding spots (80) led out by electrodes are arranged on the metallization layer (70).
5. The bottom electrode excited surface acoustic wave device structure as claimed in claim 4, wherein: and two side walls of the metalized layer (70) are also provided with grounding electrodes (52).
6. The bottom electrode excitation type surface acoustic wave device structure according to claim 4, wherein: a functional layer (20) is further arranged between the supporting substrate layer (10) and the insulating layer (30).
7. The bottom electrode excited surface acoustic wave device structure as claimed in claim 4, wherein: the supporting substrate layer (10) is made of one material including but not limited to a silicon-based material, a SiC material and a sapphire substrate material.
8. The bottom electrode excited surface acoustic wave device structure as claimed in claim 6, wherein: the functional layer (20) is made of one or more composite film layers including AlN, diamond and hexagonal boron nitride, or is made of a multi-layer composite film layer structure matched by Bragg reflection grating type high-low sound velocity materials.
9. The bottom electrode excited surface acoustic wave device structure as claimed in claim 4, wherein: the piezoelectric material layer (40) is made of one material including but not limited to LT and LN piezoelectric materials of various cut types, alN materials and ZnO materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211053125.1A CN115296639A (en) | 2022-08-31 | 2022-08-31 | Bottom electrode excitation type surface acoustic wave device structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211053125.1A CN115296639A (en) | 2022-08-31 | 2022-08-31 | Bottom electrode excitation type surface acoustic wave device structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115296639A true CN115296639A (en) | 2022-11-04 |
Family
ID=83832414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211053125.1A Pending CN115296639A (en) | 2022-08-31 | 2022-08-31 | Bottom electrode excitation type surface acoustic wave device structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115296639A (en) |
-
2022
- 2022-08-31 CN CN202211053125.1A patent/CN115296639A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10879870B2 (en) | Elastic wave device, front-end circuit, and communication device | |
| US7851977B2 (en) | Electroacoustic component | |
| US8529986B1 (en) | Layer acoustic wave device and method of making the same | |
| US7579928B2 (en) | Surface acoustic wave device and communication device | |
| US9780759B2 (en) | Elastic wave device and method for manufacturing the same | |
| WO2017212774A1 (en) | Elastic wave device and method for manufacturing same | |
| JP2019186655A (en) | Elastic wave device, multiplexer, and composite substrate | |
| US7692515B2 (en) | Low-loss electro-acoustic component | |
| KR20180009354A (en) | Multiplexer, high-frequency front-end circuit and communication device | |
| US10910546B2 (en) | Surface acoustic wave device and method of manufacturing the same | |
| JP2010521114A (en) | Directional bulk ultrasonic interlocking element | |
| JP7628361B2 (en) | Acoustic Wave Devices, Filters and Multiplexers | |
| CN114070257A (en) | Acoustic wave device, filter and multiplexer | |
| US20240243728A1 (en) | Filter device | |
| CN115296639A (en) | Bottom electrode excitation type surface acoustic wave device structure | |
| CN218734228U (en) | Multi-frequency filter integrated chip | |
| CN112243567A (en) | Electroacoustic resonator and RF filter including electroacoustic resonator | |
| WO2010007805A1 (en) | Branching filter | |
| US20230104405A1 (en) | Acoustic wave device with multilayer piezoelectric substrate for reduced spurious signals | |
| JP2010252254A (en) | Surface acoustic wave filter and duplexer | |
| CN115225055A (en) | Multi-frequency filter integrated chip and manufacturing method thereof | |
| KR100510563B1 (en) | Surface acoustic wave device preferable for g㎐ band | |
| JP2020191535A (en) | Elastic wave device, filter, and multiplexer | |
| RU2817395C1 (en) | Surface acoustic wave filter | |
| WO2020179458A1 (en) | Electronic component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |