CN115295451A - Bonding apparatus and bonding method - Google Patents

Abstract

The invention provides a bonding device and a bonding method, which are used for bonding a chip on a wafer, and the bonding device comprises: a carrier film, wherein a plurality of chips are adhered to the first surface; and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer. The technical scheme of the invention can reduce the pollution to the bonding surface of the chip and the falling of the chip in the transmission process, thereby improving the yield of products.

Description

Bonding device and bonding method

technical field

The invention relates to the field of semiconductors, in particular to a bonding device and a bonding method.

Background technique

Chip-wafer three-dimensional bonding integration technology adopts bumpless technology compared with three-dimensional stacked chips using packaging technology, which breaks through the input/output density limitation and parasitic effects caused by bump size, and is the most cutting-edge three-dimensional integration technology at present. technology.

At present, the chip-wafer three-dimensional bonding integration technology adopts the method of taking qualified chips on the cut wafers, then interacting with the robotic arm, and finally positioning and bonding them on the required wafers. The specific steps include: first, as shown in Figure 1a, the cut chip 12 is positioned on the blue film 11, and the glue between the chip 12 and the blue film 11 is debonded, and the first mechanical arm 13 is positioned to the chip 12 to be grasped Then, as shown in Figure 1b, the first mechanical arm 13 grabs the chip 12; Then, as shown in Figure 1c, the first mechanical arm 13 flips the chip 12 counterclockwise by 90° counterclockwise, and then uses the second mechanical The arm 14 absorbs the chip 12 on the first mechanical arm 13; then, as shown in FIG. above the wafer 15 to bond the chip 12 on the wafer 15 .

However, in the above steps, the first robotic arm 13 grabs the bonding surface of the chip 12, resulting in the risk of contamination of the bonding surface of the chip 12. Since the bonding of the chip and the wafer has very high requirements on the bonding surface, therefore, Pollution on the bonding surface of the chip 12 leads to defective products after bonding; and, when the second robot arm 14 is used to absorb the chip 12 on the first robot arm 13 , the chip 12 may fall due to mechanical reasons.

Therefore, the bonding device and bonding method can be further optimized.

Contents of the invention

The object of the present invention is to provide a bonding device and a bonding method, which can reduce the contamination of the bonding surface of the chip and the drop of the chip during the transfer process, thereby improving the product yield.

To achieve the above object, the present invention provides a bonding device for bonding a chip on a wafer, the bonding device comprising:

a carrier film, the first surface of the carrier film is bonded with a plurality of the chips;

A pressing unit is arranged above the wafer, the pressing unit includes a pressing head, and the pressing head is used to press the chips bonded on the first surface of the carrier film downward toward the a wafer, such that the chips are bonded to the wafer.

Optionally, the bonding device also includes:

The conveying unit includes an inverting part, a conveying part and a moving part, the inverting part is used to invert the carrier film from the first face upward to the second face upward, and the conveying part is used for inverting the reversed The carrier film is moved above the wafer, and the moving part is used to control the movement of the bonding head.

Optionally, the crimping unit also includes:

and an ultraviolet lamp for performing debonding on the carrier film after bonding, so that the chip is detached from the carrier film.

Optionally, an alignment mark is formed on the chip; the bonding device further includes:

an alignment module for identifying the alignment mark before the crimp head presses the chip bonded on the first side of the carrier film down toward the wafer, and by controlling the carrier film The position of the chip is adjusted so that the chip is aligned with the wafer.

Optionally, the alignment marks are located in part or all of the thickness of the chip.

Optionally, the shape of the alignment mark includes at least one of a cross shape, a circle shape, a polygon shape, an arc shape and an L shape.

The present invention also provides a bonding method for bonding a chip on a wafer, the bonding method comprising:

providing a carrier film, the first surface of the carrier film is bonded with a plurality of the chips;

The chip bonded to the first surface of the carrier film is pressed down toward the wafer by using a pressing head arranged above the wafer, so that the chip is bonded on the wafer.

Optionally, before using a pressing head arranged above the wafer to press the chip bonded on the first side of the carrier film downward to the wafer, the bonding method further includes:

using an inverting part to invert the carrier film from the first face up to the second face up;

moving the flipped carrier film over the wafer by using a transfer unit;

A moving part is used to control the positional movement of the crimping head.

Optionally, the bonding method also includes:

The carrier film is irradiated with an ultraviolet lamp, so that the chip is detached from the carrier film after the carrier film is debonded.

Optionally, before using the inverting part to invert the carrier film from the first face up to the second face up, the bonding method further includes:

An alignment mark is formed on the chip by using a plasma etching process.

Optionally, the alignment marks are located in part or all of the thickness of the chip.

Optionally, the shape of the alignment mark includes at least one of a cross shape, a circle shape, a polygon shape, an arc shape and an L shape.

Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

1. The bonding device of the present invention includes: a carrier film with a plurality of chips bonded on the first surface; a crimping unit arranged above the wafer, and a crimping head in the crimping unit is used for The chip bonded to the first side of the carrier film is pressed down against the wafer such that the chip is bonded to the wafer. In the bonding device provided by the present invention, before the chip is bonded on the wafer, the bonding surface of the chip is not in contact with other components, so that the pollution to the bonding surface of the chip is reduced, Therefore, the yield rate of the bonded product is improved; moreover, the chip is directly transported over the wafer by using the carrier film as a carrier, so as to avoid dropping of the chip during the transport process.

2. The bonding method of the present invention includes: using a pressing head arranged above the wafer to press the chip bonded on the first surface of the carrier film downward to the wafer, so that the The chip is bonded on the wafer. In the bonding method provided by the present invention, before the chip is bonded on the wafer, the bonding surface of the chip is not in contact with other components, so that the pollution to the bonding surface of the chip is reduced, Therefore, the yield rate of the bonded product is improved; moreover, the chip is directly transferred to the wafer by using the carrier film as a carrier, so as to avoid dropping of the chip during the transfer process.

Description of drawings

Fig. 1a～Fig. 1d are the schematic diagrams of each step in a kind of bonding method;

Fig. 2 is the flowchart of the bonding method of an embodiment of the present invention;

Fig. 3a～Fig. 3g are the schematic diagrams of each step in the bonding method shown in Fig. 2;

4 is a schematic diagram of an alignment mark on a chip according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of alignment marks on a chip according to another embodiment of the present invention.

Wherein, the reference numerals of accompanying drawings 1a to 5 are explained as follows:

11-blue film; 12-chip; 13-first robot arm; 14-second robot arm; 15-wafer; 21-chip; 211-alignment mark; 22-wafer; 23-carrier film; 24- Hold your head down.

Detailed ways

In order to make the purpose, advantages and features of the present invention clearer, the bonding device and bonding method proposed by the present invention will be further described in detail below. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

An embodiment of the present invention provides a bonding device for bonding a chip to a wafer, the bonding device includes: a carrier film, a plurality of chips are bonded to a first surface of the carrier film; A pressing unit is arranged above the wafer, the pressing unit includes a pressing head, and the pressing head is used to press the chips bonded on the first surface of the carrier film downward toward the a wafer, such that the chips are bonded to the wafer.

Referring to FIGS. 3 a to 3 g and FIGS. 4 to 5 , the bonding device provided by this embodiment will be described in more detail below.

The first surface of the carrying film 23 is coated with adhesive glue, and the first surface of the carrying film 23 is bonded with a plurality of chips 21 through the adhesive glue.

The carrying film 23 can be a film coated with adhesive glue such as a blue film, and the carrying film 23 is a translucent or transparent material capable of transmitting light.

Moreover, in order to avoid interference between adjacent chips 21 in the subsequent process of bonding the chip 21 to the wafer 22 to be bonded, the elasticity of the carrier film 23 can be used to pull the chip 23 by a crystal expander. The carrying film 23 increases the distance between adjacent chips 21 and enables the chips 21 to be aligned with the chips at corresponding positions on the wafer 22 to be bonded.

The bonding device also includes a crystal expansion ring (not shown), after the carrier film 23 is expanded, the crystal expansion ring is used to fix the carrier film 23 and tighten the carrier film 23 , the crystal expansion ring is located at the edge of the carrier film 23 , and the crystal expansion ring surrounds all the chips 21 .

The bonding device further includes a mechanical arm (not shown), the crystal expansion ring is fixed on the mechanical arm, so that the carrier film 23 is fixed on the mechanical arm.

Preferably, the first side of the carrier film 23 is bonded to the back side of the chip 21, so that the front side of the chip 21 can be bonded to the wafer 22, and the bonding between the carrier film 23 and the chip can be avoided. 21, the carrier film 23 is bonded to the front of the chip 21 so that the sticky glue attached to the front of the chip 21 cannot be removed cleanly, thereby avoiding affecting the performance of the chip 21. Wherein, the chip 21 includes a substrate and an insulating dielectric layer formed on the substrate, a device structure is formed in the insulating dielectric layer, and the back side of the chip 21 is a side of the substrate away from the insulating dielectric layer, The front and back of the chip 21 are opposite faces.

As shown in FIG. 3 a , in the initial state, the first surface of the carrier film 23 faces upward, and if the first surface of the carrier film 23 is bonded to the back of the chip 21 , the front of the chip 21 faces upward.

The bonding device also includes a transfer unit (not shown), the transfer unit includes a turning part, a transferring part and a moving part, as shown in Figure 3b, the turning part is used to turn over the carrier film 23, so that The carrier film 23 is turned upside down from the first side to the second side up, and the first side and the second side are opposite sides; as shown in FIG. The carrier film 23 is moved to the top of the wafer 22 to be bonded, and the position of the carrier film 23 is controlled to move, so that the first surface of the carrier film 23 is bonded to the chip 21 and the The corresponding position of the wafer 22 is aligned; the moving part is used to control the position movement of the bonding head 24 in the vertical and horizontal directions.

Wherein, if the carrier film 23 is bonded to the back of the chip 21 , the chip 21 is turned from the front up to the back up.

Wherein, the robot arm is connected with the turning part and the conveying part, the turning part turns the carrier film 23 through the robot arm, and the transfer part moves the carrier film 23 through the robot arm.

Therefore, compared with the process of transferring the chip 12 shown in FIGS. 1a to 1d, the transfer unit in this embodiment directly uses the The carrier film 23 is used as a carrier to transport the chip 21, avoiding the direct contact and transport of the chip 21 by the transfer part and the mechanical arm and other components; and before the chip 21 moves above the wafer 22, there is no need to Transfer the chips 21 from the carrier film 23 to other components, so as to avoid dropping the chips 21 during the transfer process.

The crimping unit is arranged above the wafer 22, and the crimping unit includes a crimping head 24, as shown in FIGS. 3c to 3e, the crimping head 24 is arranged above the wafer 22, so The crimping head 24 can move down vertically to contact the second surface of the carrier film 23, and then continue to press the chips 21 to be bonded on the first surface of the carrier film 23 downward toward the carrier film 23. the wafer 22 so that the chips 21 are bonded on the wafer 22 . Wherein, the crimping head 24 can press down the chip 21 successively from the center of the carrier film 23 to the outer edge of the carrier film 23, and the crimping head 24 presses down each time. The number of chips 21 can be one or at least two, that is, at least one chip 21 can be bonded to the wafer 22 every time the crimping head 24 presses down once.

And, as shown in FIG. 3 f , after all the chips 21 are bonded on the wafer 22 , the bonding head 24 can be removed.

As shown in FIGS. 4 to 5 , an alignment mark 211 is formed on the chip 21 .

The alignment mark 211 is located in the chip 21 of a partial thickness. At this time, the alignment mark 211 can be located on the front or back of the chip 21; or, the alignment mark 211 is located in the entire thickness of the chip 21. In the chip 21 , that is, the alignment mark 211 runs through the chip 21 .

The alignment mark 211 is located in a non-functional area on the edge of the chip 21 , such as on a dicing line, so as not to affect the performance of the chip 21 .

The alignment mark 211 may be located on the side of the chip 21 or on the corner of the chip 21 .

The shape of the alignment mark 211 may include at least one of a cross shape, a circle shape, a polygon shape, an arc shape, and an L shape.

As shown in FIG. 4 , in a specific embodiment, a cross-shaped alignment mark 211 is formed at the four corners of the chip 21, and the four alignment marks 211 can be located in a part of the thickness or in the entire thickness. In the chip 21; as shown in FIG. 5, in another specific embodiment, each corner of the chip 21 is cut off a quadrilateral area, so that each corner of the chip 21 is formed with a An L-shaped alignment mark 211 , the alignment mark 211 runs through the chip 21 .

The bonding device also includes an alignment module (not shown), and the alignment module is used to press down the chip 21 bonded on the first surface of the carrier film 23 at the pressing head 24 Identify the alignment mark 211 on the chip 21 and the alignment mark (not shown) on the wafer 22 before the wafer 22, so that the chip 21 is aligned with the wafer 22 allow. Wherein, the alignment module only needs to recognize the alignment marks 211 on some of the chips 21 on the carrier film 23, and controls the position movement of the carrier film 23 through the transfer unit to align the part of the chips 21 with the wafer 22. Alignment of all the chips 21 and the wafer 22 can be realized by performing the alignment operation.

And, as shown in FIG. 3d, after the chip 21 to be bonded on the carrier film 23 is moved above the position to be bonded on the wafer 22, the alignment module is used to identify the chip to be bonded. The alignment mark 211 on the chip 21 makes the crimping head 24 align with the chip 21 to be bonded, so that the crimping head 24 can accurately align the chip 21 to be bonded. Bonding on the position to be bonded on the wafer 22 .

Therefore, compared with the single chip 12 that is grabbed from the blue film 11 each time shown in FIGS. In the embodiment, all the chips 21 on the carrier film 23 are moved to the top of the wafer 22 as a whole, and the bonding head 24 is used to complete the bonding of all the chips 21 and the wafer 22 in sequence, so that there is no need to perform bonding before bonding. Aligning each chip 21 with the wafer 22 simplifies the process steps.

Wherein, when identifying the alignment mark 211, if the alignment mark 211 is located in the chip 21 with a partial thickness, when the alignment mark 211 is located on the side of the chip 21 away from the carrier film 23 When, the light emitted by the alignment module can pass through the carrier film 23 and part of the thickness of the chip 21 to identify the alignment mark 211; When the carrier film 23 is in contact with one side, the light emitted by the alignment module can pass through the carrier film 23 and identify the alignment mark 211 . If the alignment mark 211 is located in the entire thickness of the chip 21 , the light emitted by the alignment module can pass through the carrier film 23 and identify the alignment mark 211 .

The pressing unit also includes an ultraviolet lamp assembly (not shown), which is used to debond the carrier film 23 after all the chips 21 are bonded on the wafer 22, so that the The chips 21 are detached from the carrier film 23 . Wherein, the ultraviolet lamp assembly can be used to irradiate the entire carrier film 23 at the same time, so that all the chips 21 and the carrier film 23 are debonded. As shown in FIG. 3g, after degumming, the carrier film 23 can be removed.

In summary, the bonding device provided by the present invention includes: a carrier film, a plurality of chips are bonded to the first surface of the carrier film; a pressing unit is arranged above the wafer, and the pressing unit is arranged above the wafer. The bonding unit includes a crimping head, and the crimping head is used for pressing the chip bonded on the first side of the carrier film downward to the wafer, so that the chip is bonded to the wafer superior. In the bonding device provided by the present invention, before the chip is bonded on the wafer, the bonding surface of the chip is not in contact with other components, so that the pollution to the bonding surface of the chip is reduced, Therefore, the yield rate of the bonded product is improved; moreover, the chip is directly transported over the wafer by using the carrier film as a carrier, so as to avoid dropping of the chip during the transport process.

An embodiment of the present invention provides a bonding method for bonding a chip on a wafer. Referring to FIG. 2, FIG. 2 is a flow chart of a bonding method according to an embodiment of the present invention. Out, described bonding method comprises:

Step S1, providing a carrier film, the first surface of the carrier film is bonded with a plurality of the chips;

Step S2, using a pressing head arranged above the wafer to press the chip bonded on the first surface of the carrier film downward to the wafer, so that the chip is bonded to the wafer. circle on.

Referring to Figures 3a-3g and Figures 4-5, the bonding method provided by this embodiment will be described in more detail below:

According to step S1, referring to FIG. 3a, a carrier film 23 is provided, the first surface of the carrier film 23 is coated with adhesive glue, and the first surface of the carrier film 23 is bonded with a plurality of The above-mentioned chip 21.

The carrying film 23 can be a film coated with adhesive glue such as a blue film, and the carrying film 23 is a translucent or transparent material capable of transmitting light.

A device wafer (not shown) is adhered to the first surface of the carrier film 23, and then the device wafer is cut to obtain a plurality of chips 21, so that the first surface of the carrier film 23 A plurality of chips 21 are surface-bonded.

In order to avoid interference between adjacent chips 21 during the subsequent process of bonding the chips 21 to the wafer 22 to be bonded, after cutting the device wafer, the elasticity of the carrier film 23 can be used to expand The crystal machine pulls the carrying film 23 to expand the carrying film 23, so that the distance between adjacent chips 21 increases, and the chips 21 can correspond to the wafer 22 to be bonded. chip alignment at the position.

After carrying out crystal expansion to the carrier film 23, the carrier film 23 can be fixed on a crystal expansion ring (not shown), the crystal expansion ring is located at the edge of the carrier film 23, and the crystal expansion ring Around all the chips 21, the crystal expansion ring is used to tighten the carrier film 23; and, the crystal expansion ring is fixed on a mechanical arm (not shown), thereby fixing the carrier film 23 on the robotic arm.

Preferably, the first side of the carrier film 23 is bonded to the back side of the chip 21, so that the front side of the chip 21 can be bonded to the wafer 22, and can avoid subsequent bonding between the carrier film 23 and the chip 21. When dissolving the glue between the chips 21 , the carrier film 23 is bonded to the front of the chip 21 so that the sticky glue adhering to the front of the chip 21 cannot be removed cleanly, thereby avoiding affecting the performance of the chip 21 . Wherein, the chip 21 includes a substrate and an insulating dielectric layer formed on the substrate, a device structure is formed in the insulating dielectric layer, and the back side of the chip 21 is a side of the substrate away from the insulating dielectric layer, The front and back of the chip 21 are opposite faces.

As shown in FIG. 3 a , the first surface of the carrier film 23 faces upward, and if the first surface of the carrier film 23 is bonded to the back surface of the chip 21 , the front surface of the chip 21 faces upward.

And, a transfer unit (not shown) is provided, and the transfer unit includes an inverting part, a transfer part and a moving part; subsequently, the crimping head 24 arranged on the wafer 22 is used to place the first part of the carrier film 23 Before the chip 21 bonded on one side is pressed downward to the wafer 22, the bonding method may further include: first, referring to FIG. The film 23 is turned from the first face up to the second face up, and the first face and the second face are opposite faces; then, as shown in FIG. The film 23 is moved above the wafer 22 to be bonded; then, a moving part is used to control the position movement of the crimping head 24 in the vertical and horizontal directions.

Wherein, if the carrier film 23 is bonded to the back of the chip 21 , the chip 21 is turned from the front up to the back up.

Wherein, the robot arm is connected with the turning part and the conveying part, the turning part turns the carrier film 23 through the robot arm, and the transfer part moves the carrier film 23 through the robot arm.

Therefore, compared with the process of transferring the chip 12 shown in FIGS. 1a to 1d, in this embodiment, the carrier film 23 is directly used as the carrier in the process of moving the chip 21 to the top of the wafer 22. Transferring the chip 21 avoids direct contact between the transfer unit and the robotic arm and other components and transfers the chip 21; Transfer from the carrier film 23 to other components, so as to prevent the chip 21 from falling during the transfer process.

According to step S2, referring to FIG. 3d to FIG. 3f, the crimping head 24 arranged above the wafer 22 is used to move vertically down to contact the second surface of the carrier film 23, and continue to press the carrier film 23 The chip 21 bonded on the first side is pressed down to the wafer 22 so that the chip 21 is bonded to the wafer 22 . Wherein, the crimping head 24 can press down the chip 21 successively from the center of the carrier film 23 to the outer edge of the carrier film 23, and the crimping head 24 presses down each time. The number of chips 21 can be one or at least two, that is, at least one chip 21 can be bonded to the wafer 22 every time the crimping head 24 presses down once.

And, as shown in FIG. 3 f , after all the chips 21 are bonded on the wafer 22 , the bonding head 24 can be removed.

Moreover, referring to FIGS. 4 to 5 , before using the inverting part to invert the carrier film 23 from the first face up to the second face up, the bonding method may further include: using plasma etching The chip 21 is etched by a process to form an alignment mark 211 on the chip 21 . Moreover, the alignment marks 211 may be etched and formed by using a plasma etching process before or after dicing the device wafer to form a plurality of the chips 21 .

It should be noted that, in other embodiments, the alignment mark 211 may also be formed on the chip 21 by laser irradiation.

The alignment mark 211 is located in the chip 21 of a partial thickness. At this time, the alignment mark 211 can be located on the front or back of the chip 21; or, the alignment mark 211 is located in the entire thickness of the chip 21. In the chip 21 , that is, the alignment mark 211 runs through the chip 21 .

The alignment mark 211 is located in a non-functional area on the edge of the chip 21 , such as on a dicing line, so as not to affect the performance of the chip 21 .

The alignment mark 211 may be located on the side of the chip 21 or on the corner of the chip 21 .

The shape of the alignment mark 211 may include at least one of a cross shape, a circle shape, a polygon shape, an arc shape, and an L shape.

As shown in FIG. 4 , in a specific embodiment, a cross-shaped alignment mark 211 is formed at the four corners of the chip 21, and the four alignment marks 211 can be located in a part of the thickness or in the entire thickness. In the chip 21; as shown in FIG. 5, in another specific embodiment, each corner of the chip 21 is cut off a quadrilateral area, so that each corner of the chip 21 is formed with a An L-shaped alignment mark 211 , the alignment mark 211 runs through the chip 21 .

And, after using the transferring part to move the reversed carrier film 23 above the wafer 22 and before using the moving part to vertically move down the bonding head 24, the bonding method It also includes: as shown in FIG. 3d, using an alignment module (not shown) to identify the alignment marks 211 and the alignment marks (not shown) on the wafer 22, and aligning the alignment marks (not shown) on the wafer 22 through the transfer part The position of the carrier film 23 is adjusted so that the chip 21 is aligned with the wafer 22 . Wherein, the alignment module only needs to identify the alignment marks 211 on some of the chips 21 on the carrier film 23, and align some of the chips 21 with the wafer 22 to realize the alignment of all the chips 21 and all of the chips 21. Alignment of wafer 22 described above.

And, after the chip 21 is aligned with the wafer 22, the alignment module can also be used to identify the alignment mark 211 on the chip 21 to be bonded, so that the crimping head 24 and The chips 21 to be bonded are aligned so that the crimping head 24 can accurately bond the chips 21 to be bonded to the positions to be bonded on the wafer 22 .

Therefore, compared with the single chip 12 that is grabbed from the blue film 11 each time shown in FIGS. In the embodiment, all the chips 21 on the carrier film 23 are moved to the top of the wafer 22 as a whole, and the bonding head 24 is used to complete the bonding of all the chips 21 and the wafer 22 in sequence, so that there is no need to perform bonding before bonding. Aligning each chip 21 with the wafer 22 simplifies the process steps.

Wherein, when identifying the alignment mark 211, if the alignment mark 211 is located in the chip 21 with a partial thickness, when the alignment mark 211 is located on the side of the chip 21 away from the carrier film 23 When, the light emitted by the alignment module can pass through the carrier film 23 and part of the thickness of the chip 21 to identify the alignment mark 211; When the carrier film 23 is in contact with one side, the light emitted by the alignment module can pass through the carrier film 23 and identify the alignment mark 211 . If the alignment mark 211 is located in the entire thickness of the chip 21 , the light emitted by the alignment module can pass through the carrier film 23 and identify the alignment mark 211 .

After all the chips 21 are bonded on the wafer 22, the bonding method further includes: using an ultraviolet lamp assembly to irradiate the entire carrier film 23 at the same time, so as to perform debonding on the carrier film 23 Afterwards, the chip 21 is separated from the carrier film 23 . As shown in FIG. 3g, after degumming, the carrier film 23 can be removed.

In summary, the bonding method provided by the present invention includes: providing a carrier film, the first surface of the carrier film is bonded with a plurality of the chips; The chip bonded to the first side of the carrier film is pressed down against the wafer so that the chip is bonded to the wafer. In the bonding method provided by the present invention, before the chip is bonded on the wafer, the bonding surface of the chip is not in contact with other components, so that the pollution to the bonding surface of the chip is reduced, Therefore, the yield rate of the bonded product is improved; moreover, the chip is directly transferred to the wafer by using the carrier film as a carrier, so as to avoid dropping of the chip during the transfer process.

The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosures shall fall within the protection scope of the claims.

Claims (12)

1. A bonding apparatus for bonding a chip to a wafer, the bonding apparatus comprising:

the first surface of the bearing film is adhered with a plurality of chips;

and the pressing unit is arranged above the wafer and comprises a pressing head, and the pressing head is used for pressing the chip bonded on the first surface of the bearing film downwards to the wafer so as to enable the chip to be bonded on the wafer.

2. The bonding apparatus of claim 1, wherein the bonding apparatus further comprises:

the conveying unit comprises a turnover part, a conveying part and a moving part, wherein the turnover part is used for turning the bearing film from the first surface to the second surface, the conveying part is used for moving the turned bearing film to the upper part of the wafer, and the moving part is used for controlling the position of the pressing head to move.

3. The bonding apparatus of claim 1, wherein the pressing unit further comprises:

and the ultraviolet lamp is used for performing dispergation on the carrier film after bonding so as to enable the chip to be separated from the carrier film.

4. The bonding apparatus of claim 1, wherein the chip has alignment marks formed thereon; the bonding apparatus further includes:

and the alignment module is used for identifying the alignment mark before the pressing head presses the chip bonded on the first surface of the bearing film downwards to the wafer, and controlling the position adjustment of the bearing film so as to align the chip with the wafer.

5. The bonding apparatus of claim 4, wherein the alignment mark is located in a portion or all of the thickness of the chip.

6. The bonding apparatus of claim 4, wherein the alignment mark has a shape including at least one of a cross, a circle, a polygon, a circular arc, and an L-shape.

7. A bonding method for bonding a chip to a wafer, the bonding method comprising:

providing a bearing film, wherein a plurality of chips are adhered to the first surface of the bearing film;

and pressing the chip bonded on the first surface of the bearing film downwards towards the wafer by using a pressing head arranged above the wafer so as to bond the chip on the wafer.

8. The bonding method according to claim 7, wherein before the chip bonded to the first surface of the carrier film is pressed down toward the wafer with a pressing head disposed above the wafer, the bonding method further comprises:

turning the bearing film from the first surface to the second surface upwards by using a turning part;

moving the overturned bearing film to the upper part of the wafer by adopting a conveying part;

and controlling the position movement of the pressing head by using a moving part.

9. The bonding method of claim 7, further comprising:

and irradiating the bearing film by adopting an ultraviolet lamp so as to enable the chip to be separated from the bearing film after the bearing film is subjected to dispergation.

10. The bonding method according to claim 8, wherein before the carrier film is flipped from the first face up to the second face up using the flip part, the bonding method further comprises:

and forming an alignment mark on the chip by adopting a plasma etching process.

11. The bonding method of claim 10, wherein the alignment mark is located in a partial thickness or a full thickness of the chip.

12. The bonding method according to claim 10, wherein the shape of the alignment mark comprises at least one of a cross shape, a circular shape, a polygonal shape, a circular arc shape, and an L-shape.

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