CN115291471A - Photomask and manufacturing method thereof - Google Patents
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- CN115291471A CN115291471A CN202211059991.1A CN202211059991A CN115291471A CN 115291471 A CN115291471 A CN 115291471A CN 202211059991 A CN202211059991 A CN 202211059991A CN 115291471 A CN115291471 A CN 115291471A
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
技术领域technical field
本申请涉及光掩膜版领域,尤其涉及一种能防止“灰霾”缺陷产生的光掩膜版及其制作方法。The present application relates to the field of photomasks, in particular to a photomask capable of preventing the generation of "haze" defects and a manufacturing method thereof.
背景技术Background technique
光刻工艺是集成电路制造工艺中不可或缺的重要技术。光刻工艺通常包括步骤:先在晶圆表面涂布光刻胶等感光材料,在光刻胶材料干燥后,通过曝光机将光掩模版上的掩模图形以特定光源曝在所述的光刻胶感光材料上,随后,再以显影剂将光刻胶感光材料显影,在晶圆表面形成光刻胶图形,所述光刻胶图形在后续进行离子注入工艺或刻蚀工艺时作为掩膜图形。Photolithography is an indispensable and important technology in the integrated circuit manufacturing process. The photolithography process generally includes steps: firstly coat photosensitive materials such as photoresist on the surface of the wafer, and after the photoresist material is dried, expose the mask pattern on the photomask plate to the light with a specific light source through an exposure machine. On the photoresist photosensitive material, the photoresist photosensitive material is then developed with a developer to form a photoresist pattern on the surface of the wafer, and the photoresist pattern is used as a mask during the subsequent ion implantation process or etching process graphics.
现有的光罩防护膜结构一般包括:透明基板;位于所述透明基板的表面上形成若干分立的遮蔽图形(或掩膜图形);位于所述透明基板表面上的环形框架,所述环形框架包围所述遮蔽图形;位于所述环形框架顶部表面的保护膜,所述保护膜和环形框架用于密封所述光掩膜版。The existing photomask pellicle structure generally includes: a transparent substrate; a number of discrete shielding patterns (or mask patterns) are formed on the surface of the transparent substrate; an annular frame is positioned on the surface of the transparent substrate, and the annular frame Surrounding the shielding pattern; a protective film on the top surface of the annular frame, the protective film and the annular frame are used to seal the photomask.
但是现有的光掩膜版在使用的过程中,光掩模版上会形成异物状生长缺陷,这些生长缺陷也称为“灰霾”,影响了曝光的精度和准确性。However, during the use of the existing photomask, growth defects in the form of foreign objects will be formed on the photomask, and these growth defects are also called "haze", which affects the precision and accuracy of exposure.
发明内容Contents of the invention
本申请一些实施例提供了一种光掩膜版的制作方法,包括:Some embodiments of the present application provide a method for manufacturing a photomask, including:
提供透明基板,所述透明基板包括中间区域和环绕所述中间区域的边缘区域;providing a transparent substrate comprising a middle region and an edge region surrounding the middle region;
在所述透明基板的中间区域表面上形成若干分立的遮蔽图形;forming several discrete masking patterns on the surface of the middle region of the transparent substrate;
提供二氧化硅气凝胶保护罩,将二氧化硅气凝胶保护罩粘附在所述透明基板的边缘区域表面,所述二氧化硅气凝胶保护罩密封所述遮蔽图形以及透明基板的中间区域A silica airgel protective cover is provided, and the silica airgel protective cover is adhered to the surface of the edge area of the transparent substrate, and the silica airgel protective cover seals the masking pattern and the transparent substrate. middle area
提供环形框架,将所述环形框架粘附在所述透明基板的边缘区域表面,所述环形框架包围所述二氧化硅气凝胶保护罩;providing an annular frame, adhering the annular frame to the surface of the edge region of the transparent substrate, the annular frame enclosing the silica airgel protective cover;
在所述环形框架的顶部表面形成封闭环形框架内部空间的保护膜。A protective film closing the inner space of the ring frame is formed on the top surface of the ring frame.
在一些实施例中,所述二氧化硅气凝胶保护罩包括环形侧壁和与所述环形侧壁连接并封闭所述环形侧壁一端开口的顶壁。In some embodiments, the silica airgel protective cover includes an annular side wall and a top wall connected to the annular side wall and closing an opening at one end of the annular side wall.
在一些实施例中,所述二氧化硅气凝胶保护罩的外径小于或等于所述环形框架的内径,所述二氧化硅气凝胶保护罩高度小于或等于所述环形框架的高度。In some embodiments, the outer diameter of the silica airgel protective cover is less than or equal to the inner diameter of the annular frame, and the height of the silica airgel protective cover is less than or equal to the height of the annular frame.
在一些实施例中,还包括:在所述遮蔽图形的表面形成支撑柱,所述支撑柱的尺寸小于所述遮蔽图形的尺寸;在将二氧化硅气凝胶保护罩粘附在所述透明基板的边缘区域表面时,所述支撑柱的顶部表面与所述二氧化硅气凝胶保护罩部分内表面接触。In some embodiments, it also includes: forming support pillars on the surface of the shielding pattern, the size of the support pillars is smaller than the size of the shielding pattern; after adhering the silica airgel protective cover on the transparent When the surface of the edge region of the substrate is on the surface, the top surface of the support column is in contact with the inner surface of the silica airgel protective cover part.
在一些实施例中,所述二氧化硅气凝胶保护罩通过第一粘附层粘附在所述透明基板的边缘区域表面。In some embodiments, the silica airgel protective cover is adhered to the surface of the edge region of the transparent substrate through a first adhesive layer.
在一些实施例中,所述二氧化硅气凝胶保护罩的折射率<1.01,透光率>=90%,孔径粒径为1~6nm,密度<3kg/m3。In some embodiments, the silica airgel protective cover has a refractive index of <1.01, a light transmittance of >=90%, a pore diameter of 1-6 nm, and a density of <3 kg/m3.
在一些实施例中,所述二氧化硅气凝胶保护罩的形成过程包括:提供一模具,所述模具中具有与待形成的二氧化硅气凝胶保护罩外形对应的模具图形;在所述模具图形中填充二氧化硅气凝胶,形成二氧化硅气凝胶保护罩;去除所述模具。In some embodiments, the forming process of the silica airgel protective cover includes: providing a mold, the mold has a mold pattern corresponding to the shape of the silica airgel protective cover to be formed; Silica airgel is filled in the pattern of the mold to form a silica airgel protective cover; the mold is removed.
在一些实施例中,在所述模具图形中填充二氧化硅气凝胶的方法包括溶胶凝胶法、溶剂沉积法或化学气相沉积法。In some embodiments, the method of filling the silica airgel in the mold pattern includes a sol-gel method, a solvent deposition method or a chemical vapor deposition method.
在一些实施例中,所述二氧化硅气凝胶保护罩用于吸附铵根离子和硫酸根离子以及污染颗粒,防止光掩膜版的中间区域表面以及遮蔽图形的表面产生“灰霾”缺陷。In some embodiments, the silica airgel protective cover is used to adsorb ammonium ions, sulfate ions and pollution particles, preventing "haze" defects on the surface of the middle area of the photomask and the surface of the masking pattern .
在一些实施例中,所述环形框架通过第二粘附层粘附在所述透明基板的边缘区域。In some embodiments, the ring frame is adhered to the edge area of the transparent substrate by a second adhesive layer.
本申请一些实施例还提供了一种光掩膜版,其特征在于,包括:Some embodiments of the present application also provide a photomask, which is characterized in that it includes:
透明基板,所述透明基板包括中间区域和环绕所述中间区域的边缘区域;a transparent substrate comprising a central region and an edge region surrounding the central region;
位于所述透明基板的中间区域表面上的若干分立的遮蔽图形;a plurality of discrete masking patterns on the surface of the intermediate region of the transparent substrate;
二氧化硅气凝胶保护罩,所述二氧化硅气凝胶保护罩粘附在所述透明基板的边缘区域表面,所述二氧化硅气凝胶保护罩密封所述遮蔽图形以及透明基板的中间区域A silica airgel protective cover, the silica airgel protective cover is adhered to the surface of the edge region of the transparent substrate, and the silica airgel protective cover seals the masking pattern and the transparent substrate middle area
环形框架,所述环形框架粘附在所述透明基板的边缘区域表面,所述环形框架包围所述二氧化硅气凝胶保护罩;a ring frame, the ring frame is adhered to the surface of the edge region of the transparent substrate, the ring frame surrounds the silica airgel protective cover;
位于所述环形框架的顶部表面封闭所述环形框架内部空间的保护膜。A protective film on the top surface of the annular frame enclosing the inner space of the annular frame.
在一些实施例中,所述二氧化硅气凝胶保护罩包括环形侧壁和与所述环形侧壁连接并封闭所述环形侧壁一端开口的顶壁。In some embodiments, the silica airgel protective cover includes an annular side wall and a top wall connected to the annular side wall and closing an opening at one end of the annular side wall.
在一些实施例中,所述二氧化硅气凝胶保护罩的外径小于或等于所述环形框架的内径,所述二氧化硅气凝胶保护罩高度小于或等于所述环形框架的高度。In some embodiments, the outer diameter of the silica airgel protective cover is less than or equal to the inner diameter of the annular frame, and the height of the silica airgel protective cover is less than or equal to the height of the annular frame.
在一些实施例中,还包括:位于所述遮蔽图形的表面的支撑柱,所述支撑柱的尺寸小于所述遮蔽图形的尺寸,所述支撑柱的顶部表面与所述二氧化硅气凝胶保护罩部分内表面接触。In some embodiments, it also includes: a support column located on the surface of the masking figure, the size of the support column is smaller than the size of the masking figure, the top surface of the support column is in contact with the silica airgel The inner surface of the protective cover part is in contact.
在一些实施例中,所述二氧化硅气凝胶保护罩通过第一粘附层粘附在所述透明基板的边缘区域表面。In some embodiments, the silica airgel protective cover is adhered to the surface of the edge region of the transparent substrate through a first adhesive layer.
在一些实施例中,所述二氧化硅气凝胶保护罩的折射率<1.01,透光率>=90%,孔径粒径为1~6nm,密度<3kg/m3。In some embodiments, the silica airgel protective cover has a refractive index of <1.01, a light transmittance of >=90%, a pore diameter of 1-6 nm, and a density of <3 kg/m3.
在一些实施例中,所述二氧化硅气凝胶保护罩用于吸附铵根离子和硫酸根离子以及污染颗粒,防止光掩膜版的中间区域表面以及遮蔽图形的表面产生“灰霾”缺陷。In some embodiments, the silica airgel protective cover is used to adsorb ammonium ions, sulfate ions and pollution particles, preventing "haze" defects on the surface of the middle area of the photomask and the surface of the masking pattern .
在一些实施例中,位于所述环形框架和所述透明基板的边缘区域表面之间的第二粘附层。In some embodiments, a second adhesive layer is located between the annular frame and the surface of the edge region of the transparent substrate.
本申请前述一些实施例中的光掩膜版的形成方法,提供透明基板,所述透明基板包括中间区域和环绕所述中间区域的边缘区域;在所述透明基板的中间区域表面上形成若干分立的遮蔽图形;提供二氧化硅气凝胶保护罩,将二氧化硅气凝胶保护罩粘附在所述透明基板的边缘区域表面,所述二氧化硅气凝胶保护罩密封所述遮蔽图形以及透明基板的中间区域提供环形框架,将所述环形框架粘附在所述透明基板的边缘区域表面,所述环形框架包围所述二氧化硅气凝胶保护罩;在所述环形框架的顶部表面形成封闭环形框架内部空间的保护膜。由于形成的所述二氧化硅气凝胶保护罩具有低折射率、高透光率、高的孔隙率、和高吸附性的特性,因而形成的二氧化硅气凝胶保护罩不会对曝光过程中的曝光光线产生影响或者影响较小(且由于二氧化硅气凝胶保护罩是罩子形状,厚度可以较小,并且二氧化硅气凝胶保护罩不会与遮蔽图形和透明基板的中间区域表面存在直接接触,因而对曝光光线产生影响也会更小),并且形成的二氧化硅气凝胶保护罩能将外界通过光掩模版的保护膜连接处的孔隙进入的铵根离子、硫酸根离子和污染颗粒(particle)会被气凝胶吸附,并且能将保护膜(面向透明基板一侧)吸附的污染颗粒(particle)、金属边框因环境产生的污染颗粒(particle)、黏贴剂因长时间紫外光照射导致脆化产生的污染颗粒(particle)吸附,并且还能光掩膜版制作过程中残留的化学品(S、N、铵离子和硫离子等)能被气凝胶吸附,从而防止在光掩模版的使用过程中,在所述遮蔽图形的表面、光掩膜版20的中间区域21表面和/或相移层的表面形成“灰霾”缺陷,提高了曝光的精度和准确性。The method for forming a photomask in some of the aforementioned embodiments of the present application provides a transparent substrate, the transparent substrate includes a middle region and an edge region surrounding the middle region; several discrete A shielding pattern; a silica airgel protective cover is provided, and the silica airgel protective cover is adhered to the surface of the edge area of the transparent substrate, and the silica airgel protective cover seals the shielding pattern And the middle area of the transparent substrate provides a ring frame, the ring frame is adhered to the edge area surface of the transparent substrate, the ring frame surrounds the silica airgel protective cover; on the top of the ring frame The surface forms a protective film that closes the inner space of the ring frame. Because the silicon dioxide airgel protective cover that forms has the characteristics of low refractive index, high light transmittance, high porosity, and high adsorption, thereby the silicon dioxide airgel protective cover that forms will not be exposed to light. The exposure light in the process has an impact or a small impact (and because the silica airgel protective cover is in the shape of a cover, the thickness can be small, and the silica airgel protective cover will not interfere with the middle of the shielding pattern and the transparent substrate There is direct contact with the surface of the area, so it will have less impact on the exposure light), and the formed silica airgel protective cover can absorb the ammonium ions and sulfuric acid from the outside through the pores at the junction of the protective film of the photomask. Root ions and pollution particles (particles) will be adsorbed by the airgel, and the pollution particles (particles) that can be adsorbed by the protective film (the side facing the transparent substrate), pollution particles (particles) generated by the metal frame due to the environment, and adhesives The pollution particles (particles) produced by embrittlement caused by long-term ultraviolet light irradiation can be adsorbed, and the remaining chemicals (S, N, ammonium ions and sulfur ions, etc.) in the process of making photomasks can also be adsorbed by airgel , thereby preventing the formation of "haze" defects on the surface of the masking pattern, the surface of the
进一步,所述二氧化硅气凝胶保护罩的折射率<1.01,透光率>=90%,孔径粒径为1~6nm,密度<3kg/m3,在该特定参数下,所述二氧化硅气凝胶保护罩205能更好的吸收铵根离子、硫酸根离子和相应的污染颗粒(particle),同时对曝光光线的影响最小。Further, the refractive index of the silica airgel protective cover is <1.01, the light transmittance>=90%, the pore diameter is 1-6nm, and the density is <3kg/m 3 , under these specific parameters, the two The silica airgel
附图说明Description of drawings
图1-图5为本申请一些实施例中光掩膜版制作过程的结构示意图;1-5 are structural schematic diagrams of the process of making a photomask in some embodiments of the present application;
图6-图8为本申请一些实施例中二氧化硅气凝胶保护罩形成过程的结构示意图;6-8 are schematic structural diagrams of the formation process of the silica airgel protective cover in some embodiments of the present application;
图9为本申请一些实施例中二氧化硅气凝胶形成过程的示意图。Fig. 9 is a schematic diagram of the formation process of silica airgel in some embodiments of the present application.
具体实施方式Detailed ways
现有的光掩膜版在使用的过程中,光掩模版上会形成异物状生长缺陷,这些生长缺陷也称为“灰霾”,影响了曝光的精度和准确性。During the use of the existing photomask, growth defects in the form of foreign objects will be formed on the photomask, and these growth defects are also called "haze", which affects the precision and accuracy of exposure.
研究发现,在光掩膜版的使用过程中,曝光光源产生的高能光子会使光掩模版上形成异物状生长缺陷(位于透明基板和/或遮蔽图形表面),这些生长缺陷也称为“灰霾”缺陷。The study found that during the use of the photomask, the high-energy photons generated by the exposure light source will cause foreign matter-like growth defects (located on the transparent substrate and/or the surface of the masking pattern) to form on the photomask. Haze" defect.
进一步研究发现,“灰霾”缺陷的材料包括硫酸铵晶体,“灰霾”缺陷的产生包括几个原因,1),在光掩膜版的使用过程中,外界环境中的铵根、硫酸根离子会通过保护膜连接处的孔隙进入内部空气中,在曝光光源产生的高能光子的激发下产生反应,最后附着在光掩模版上形成“灰霾”(硫酸铵晶体)。2),在光掩膜版的使用过程中,保护膜(面向透明基板一侧)吸附的污染颗粒(particle)、金属边框因环境产生的污染颗粒(particle)、黏贴剂因长时间紫外光照射导致脆化产生的污染颗粒(particle)会进入保护膜内部的空气中,最终附着在遮蔽图形或透明基板或半色调相移膜上,产生附着缺陷。3),现有技术在制作光掩膜版时,工艺中会使用多种化学药品,部分化合物残留在光掩膜版中,这些化合物包含铵离子和硫离子,他们在曝光光源产生的高能光子的激发下,发生反应会生成“灰霾”(硫酸铵晶体)。Further studies have found that the material of the "haze" defect includes ammonium sulfate crystals, and the generation of the "haze" defect includes several reasons. 1) During the use of the photomask, the ammonium and sulfate radicals in the external environment Ions will enter the internal air through the pores at the junction of the protective film, react under the excitation of high-energy photons generated by the exposure light source, and finally attach to the photomask to form "haze" (ammonium sulfate crystals). 2), during the use of the photomask, the pollution particles (particles) adsorbed by the protective film (facing the transparent substrate side), the pollution particles (particles) produced by the metal frame due to the environment, and the adhesives due to long-term ultraviolet light Contamination particles (particles) produced by embrittlement caused by irradiation will enter the air inside the protective film, and finally adhere to the masking pattern or transparent substrate or halftone phase shift film, resulting in adhesion defects. 3) In the prior art, when making photomasks, various chemicals are used in the process, and some compounds remain in the photomasks. These compounds include ammonium ions and sulfur ions. The high-energy photons produced by them in the exposure light source Under excitation, the reaction will generate "haze" (ammonium sulfate crystals).
为此,本申请提供了一种光掩膜版及其制作方法,能防止光掩膜版在使用过程中产生“灰霾”缺陷。To this end, the present application provides a photomask and a manufacturing method thereof, which can prevent the "haze" defect of the photomask during use.
下面结合附图对本申请的具体实施方式做详细的说明。在详述本申请实施例时,为便于说明,示意图会不依一般比例作局部放大,而且所述示意图只是示例,其在此不应限制本申请的保护范围。此外,在实际制作中应包含长度、宽度及深度的三维空间尺寸。The specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present application in detail, for the convenience of explanation, the schematic diagrams will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the protection scope of the present application. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.
本申请一些实施例首先提供了一种光掩膜版的制作方法,下面结合附图对光掩膜版制作过程进行详细的描述。Some embodiments of the present application firstly provide a method for manufacturing a photomask, and the photomask manufacturing process will be described in detail below with reference to the accompanying drawings.
参考图1,提供透明基板201,所述透明基板201包括中间区域21和环绕所述中间区域21的边缘区域22;在所述透明基板201的中间区域21表面上形成若干分立的遮蔽图形202。Referring to FIG. 1 , a
所述透明基板201作为光掩模版的载体,所述透明基板201的材质为透光的材质,所述透明基板201的透光率大于90%。在一些实施例中所述透明基板201的材料可以为石英玻璃或苏打玻璃。在其他一些实施例中,所述透明基板201的材料还可以为熔融硅石(fusedsilica)、氟化钙、氮化硅、氧化钛合金、蓝宝石。The
所述透明基板201包括中间区域21和环绕所述中间区域21的边缘区域22,所述中间区域21可以呈方形或圆形或其他合适的形状,所述边缘区域22呈环形,环绕所述中间区域21。所述中间区域21上用于形成遮蔽图形(或掩膜推行)202,所述中间区域21上还可以用于形成相移层,所述边缘区域22上后续用于形成环形框架。The
所述遮蔽图形202的材料为不透光材料,所述遮蔽图形202可以为单层或多层堆叠结构(比如两层或两层以上的堆叠结构)。在一些实施例中,所述遮蔽图形202的材料可以为镍、铝、钌、钼、钛或钽中的一种或几种。在其他一些实施例中,所述遮蔽图形202的材料还可以为镍、铝、钌、钼、钛、钽、氧化铬、氧化铁、氧化铌、氮化铬、三氧化钼、氮化钼、氧化铬、氮化钛、氮化锆、氧化钛、氮化钽、氧化钽、二氧化硅、氮化铌、氮化硅、中性氧化铝、氧化铝中的一种或几种。The material of the
在一些实施例中,所述遮蔽图形202的形成过程可以包括:在所述透明基板201表面上通过溅射或沉积工艺形成遮蔽材料层(图中未示出);在所述遮蔽材料层表面上形成图形化的掩膜层(比如图形化的光刻胶层)(图中未示出),所述图形化的掩膜层暴露出所述遮蔽材料层需要被刻蚀的区域;以所述图形化的掩膜层为掩膜,刻蚀去除所述暴露的遮蔽材料层,所述透明基板201表面剩余的遮蔽材料层作为遮蔽图形202。In some embodiments, the forming process of the
在其他实施例中,在形成遮蔽图形202之前,在所述透明基板201的中间区域21表面上还可以形成相移层(图中未示出),所述相移层用于改变入射至基板内的曝光光线的相位,以提高曝光时的分辨率。所述相移层的材料为MoSi或MoSiON。In other embodiments, before forming the
在一些实施例中,在形成遮蔽图形202后,在所述遮蔽图形202的表面形成支撑柱(图中未示出),所述支撑柱的尺寸小于所述遮蔽图形203的尺寸,所述支撑柱用于后在将二氧化硅气凝胶保护罩粘附在所述透明基板的边缘区域表面时,所述支撑柱的顶部表面与所述二氧化硅气凝胶保护罩部分内表面接触,从而起到支撑所述二氧化硅气凝胶保护罩的作用,以提高所述二氧化硅气凝胶保护罩的机械稳定性。所述支撑柱可以采用透光或不透光的材料。在一些实施例中,所述支撑柱的材料可以为氧化硅、氮化硅或多晶硅。In some embodiments, after the
参考图2,提供二氧化硅气凝胶保护罩205,将二氧化硅气凝胶保护罩205粘附在所述透明基板201的边缘区域22表面,所述二氧化硅气凝胶保护罩205密封所述遮蔽图形202以及透明基板201的中间区域21。Referring to Fig. 2, a silica airgel
由于形成的所述二氧化硅气凝胶保护罩205具有低折射率、高透光率、高的孔隙率、和高吸附性的特性,因而形成的二氧化硅气凝胶保护罩205不会对曝光过程中的曝光光线产生影响或者影响较小(且由于二氧化硅气凝胶保护罩205是罩子形状,厚度可以较小,并且二氧化硅气凝胶保护罩205不会与遮蔽图形202和透明基板201的中间区域表面存在直接接触,因而对曝光光线产生影响也会更小),并且形成的二氧化硅气凝胶保护罩205能将外界通过光掩模版的保护膜连接处的孔隙进入的铵根离子、硫酸根离子和污染颗粒(particle)会被气凝胶吸附,并且能将保护膜(面向透明基板一侧)吸附的污染颗粒(particle)、金属边框因环境产生的污染颗粒(particle)、黏贴剂因长时间紫外光照射导致脆化产生的污染颗粒(particle)吸附,并且还能光掩膜版制作过程中残留的化学品(S、N、铵离子和硫离子等)能被气凝胶吸附,从而防止在光掩模版的使用过程中,在所述遮蔽图形202的表面、光掩膜版201的中间区域21表面和/或相移层的表面形成“灰霾”缺陷,提高了曝光的精度和准确性。Because the silicon dioxide airgel protective cover 205 that forms has the characteristics of low refractive index, high light transmittance, high porosity, and high adsorption, thereby the silicon dioxide airgel protective cover 205 that forms will not The exposure light in the exposure process is affected or has little influence (and because the silica airgel protective cover 205 is a cover shape, the thickness can be small, and the silica airgel protective cover 205 will not interfere with the shielding pattern 202 There is direct contact with the surface of the middle area of the transparent substrate 201, so it will have less impact on the exposure light), and the formed silica airgel protective cover 205 can pass the outside world through the pores at the junction of the protective film of the photomask The incoming ammonium ions, sulfate ions and pollution particles will be adsorbed by the airgel, and the pollution particles (particles) adsorbed by the protective film (the side facing the transparent substrate) and the pollution particles generated by the metal frame due to the environment (particle), adhesives are adsorbed by pollution particles (particles) produced by embrittlement caused by long-term ultraviolet light irradiation, and can also remove residual chemicals (S, N, ammonium ions and sulfide ions, etc. ) can be adsorbed by airgel, thereby preventing the formation of "haze" on the surface of the masking pattern 202, the surface of the middle region 21 of the photomask 201 and/or the surface of the phase shift layer during the use of the photomask ” defects, improving the precision and accuracy of exposure.
所述二氧化硅气凝胶保护罩205包括环形侧壁和与所述环形侧壁连接并封闭所述环形侧壁一端开口的顶壁,所述二氧化硅气凝胶保护罩205未封闭的开口朝向透明基板201的表面并与透明基板201的边缘区域22表面粘接。The silica airgel
在一些实施例中,所述二氧化硅气凝胶保护罩205的外径小于或等于后续形成的环形框架的内径,所述二氧化硅气凝胶保护罩205高度小于或等于后续形成的环形框架的高度。在一具体的实施例中,参考图3或图4,所述二氧化硅气凝胶保护罩205的外径小于后续形成的环形框架204的内径,所述二氧化硅气凝胶保护罩205高度小于后续形成的环形框架204的高度(参考图3或图4)。在另一具体的实施例中,参考图5,所述二氧化硅气凝胶保护罩205的外径等于后续形成的环形框架204的内径,所述二氧化硅气凝胶保护罩205高度等于后续形成的环形框架204的高度。在另一具体的实施例中,所述二氧化硅气凝胶保护罩205的外径小于后续形成的环形框架的内径,所述二氧化硅气凝胶保护罩205高度等于后续形成的环形框架的高度。在另一具体的实施例中,所述二氧化硅气凝胶保护罩205的外径等于后续形成的环形框架的内径,所述二氧化硅气凝胶保护罩205高度小于后续形成的环形框架的高度。In some embodiments, the outer diameter of the silica airgel
在一些实施例中,所述二氧化硅气凝胶保护罩205的折射率<1.01,透光率>=90%,孔径粒径为1~6nm,密度<3kg/m3,在该特定参数下,所述二氧化硅气凝胶保护罩205能更好的吸收铵根离子、硫酸根离子和相应的污染颗粒(particle),同时对曝光光线的影响最小。In some embodiments, the silica airgel
在一些实施例中,继续参考图2,所述二氧化硅气凝胶保护罩205通过第一粘附层207粘附在所述透明基板201的边缘区域22表面。所述第一粘附层207的材料为有机粘合剂,在一些实施例中,所述有机粘合剂为橡胶粘合剂、聚氨酯粘合剂、丙烯酸粘合剂、SEBS(苯乙烯乙烯丁烯苯乙烯)粘合剂、SEPS(苯乙烯乙烯丙烯苯乙烯)粘合剂或硅氧烷粘合剂。In some embodiments, referring to FIG. 2 , the silica airgel
在一些实施例中,参考图6-图8,所述二氧化硅气凝胶保护罩的形成过程包括:参考图6,提供一模具101,所述模具101中具有与待形成的二氧化硅气凝胶保护罩外形对应的模具图形102;参考图7,在所述模具图形中填充二氧化硅气凝胶,形成二氧化硅气凝胶保护罩205;参考图8,去除所述模具,得到二氧化硅气凝胶保护罩205。获得二氧化硅气凝胶保护罩205后,将所述二氧化硅气凝胶保护罩205通过第一粘附层207粘附在所述透明基板201的边缘区域22表面。In some embodiments, referring to FIG. 6-FIG. 8, the forming process of the silica airgel protective cover includes: referring to FIG. 6, a
在一实施例中,在所述模具图形中填充二氧化硅气凝胶的方法包括溶胶凝胶法、溶剂沉积法或化学气相沉积法。In one embodiment, the method of filling the silica airgel in the mold pattern includes a sol-gel method, a solvent deposition method or a chemical vapor deposition method.
其中溶胶凝胶法就是用含高化学活性组分的化合物作为前驱体,在液相下降这些原料均匀混合,并进行水解、缩合化学反应,在溶液中形成稳定的透明溶胶系,溶胶经陈化胶粒间缓慢聚合,形成三维空间网络结构的凝胶,凝胶网络间充满了失去流动性的溶剂,凝胶经过干燥、烧结固化制备出分子乃至纳米亚结构或纳米结构的气凝胶。Among them, the sol-gel method is to use compounds containing highly chemically active components as precursors. These raw materials are evenly mixed in the liquid phase, and undergo hydrolysis and condensation chemical reactions to form a stable transparent sol system in the solution. The sol is aged. The colloidal particles are slowly aggregated to form a gel with a three-dimensional space network structure. The gel network is filled with solvents that have lost fluidity. The gel is dried, sintered and solidified to prepare molecular and even nano-substructure or nano-structure aerogels.
在一些实施例中,采用溶胶凝胶法形成所述二氧化硅气凝胶保护罩202时采用的硅源包括正硅酸甲酯、正硅酸乙酯、硅溶胶或水玻璃。In some embodiments, the silicon source used when forming the silica airgel
在一些实施例中,参考图9,采用溶胶凝胶法且硅源采用正硅酸乙酯形成所述二氧化硅气凝胶保护罩202的过程包括:将TEOS(正硅酸乙酯)、EtOH(乙醇)和H2O(水)混合;加入酸调节PH值,混匀搅拌并密封恒温形成SiO2醇凝胶;经过老化和表面改性后,形成改性后的醇凝胶;经过溶剂置换和常压干燥,形成SiO2气凝胶。In some embodiments, referring to FIG. 9 , the process of forming the silica airgel
形成气凝胶保护罩202后,参考图3,提供环形框架204,将所述环形框架204粘附在所述透明基板201的边缘区域22表面,所述环形框架204包围所述二氧化硅气凝胶保护罩205。After the airgel
所述环形框架204用于支撑后续形成的保护膜,通过所述环形框架204与和后续形成的保护膜可以将光掩膜版201上的遮蔽图形202和光掩膜版201的中间区域表面与外部环境隔离,防止外部环境的污染。The
所述环形框架202呈中空的环形,所述环形框架202的材料为具有一定机械强度的材料。在一些实施例中,所述环形框架202的材料为铝。在其他一些实施例中,所述环形框架202的材料可以为铝合金、陶瓷、碳钢或其他合适的金属材料或非金属材料。The
在一些实施例中,所述环形框架204通过第二粘附层203粘附在所述透明基板的边缘区域。In some embodiments, the
所述第二粘附层203的材料为有机粘合剂,在一些实施例中,所述有机粘合剂为橡胶粘合剂、聚氨酯粘合剂、丙烯酸粘合剂、SEBS(苯乙烯乙烯丁烯苯乙烯)粘合剂、SEPS(苯乙烯乙烯丙烯苯乙烯)粘合剂或硅氧烷粘合剂。The material of the second
接着参考图4,在所述环形框架204的顶部表面形成封闭环形框架204内部空间的保护膜206。Referring next to FIG. 4 , a
本实施例中,当所述二氧化硅气凝胶保护罩205的顶部表面低于所述环形框架204的顶部表面时,所述保护膜206的边缘部分位于所述环形框架204的顶部表面,所述保护膜206的中间部分悬空在所述二氧化硅气凝胶保护罩205的顶部表面上。在其他实施例中,参考图5,所述二氧化硅气凝胶保护罩205的顶部表面与所述环形框架204的顶部表面齐平,所述保护膜206的边缘部分位于所述环形框架204的顶部表面,所述保护膜206的中间部分位于所述二氧化硅气凝胶保护罩205的顶部表面上。In this embodiment, when the top surface of the silica airgel
所述保护膜206的材料为为透光材料。The material of the
本发明一些实施例还提供了一种光掩膜版,参考图4,包括:Some embodiments of the present invention also provide a photomask, referring to FIG. 4 , including:
透明基板201,所述透明基板201包括中间区域21和环绕所述中间区域21的边缘区域22;a
位于所述透明基板201的中间区域21表面上的若干分立的遮蔽图形202;Several
二氧化硅气凝胶保护罩205,所述二氧化硅气凝胶保护罩205粘附在所述透明基板201的边缘区域22表面,所述二氧化硅气凝胶保护罩205密封所述遮蔽图形202以及透明基板201的中间区域21;A silica airgel
环形框架204,所述环形框架204粘附在所述透明基板201的边缘区域22表面,所述环形框架204包围所述二氧化硅气凝胶保护罩205;An
位于所述环形框架204的顶部表面封闭所述环形框架内部空间的保护膜206。A
本申请的光掩膜版中由于具有二氧化硅气凝胶保护罩205,而二氧化硅气凝胶保护罩205具有低折射率、高透光率、高的孔隙率、和高吸附性的特性,因而形成的二氧化硅气凝胶保护罩205不会对曝光过程中的曝光光线产生影响或者影响较小(且由于二氧化硅气凝胶保护罩205是罩子形状,厚度可以较小,并且二氧化硅气凝胶保护罩205不会与遮蔽图形202和透明基板201的中间区域表面存在直接接触,因而对曝光光线产生影响也会更小),并且形成的二氧化硅气凝胶保护罩205能将外界通过光掩模版的保护膜连接处的孔隙进入的铵根离子、硫酸根离子和污染颗粒(particle)会被气凝胶吸附,并且能将保护膜(面向透明基板一侧)吸附的污染颗粒(particle)、金属边框因环境产生的污染颗粒(particle)、黏贴剂因长时间紫外光照射导致脆化产生的污染颗粒(particle)吸附,并且还能光掩膜版制作过程中残留的化学品(S、N、铵离子和硫离子等)能被气凝胶吸附,从而防止在光掩模版的使用过程中,在所述遮蔽图形202的表面、光掩膜版201的中间区域21表面和/或相移层的表面形成“灰霾”缺陷,提高了曝光的精度和准确性。In the photomask plate of the present application, owing to have silica airgel
在一些实施例中,所述二氧化硅气凝胶保护罩205包括环形侧壁和与所述环形侧壁连接并封闭所述环形侧壁一端开口的顶壁。In some embodiments, the silica airgel
在一些实施例中,所述二氧化硅气凝胶保护罩205的外径小于或等于所述环形框架204的内径,所述二氧化硅气凝胶保护罩205高度小于或等于所述环形框架204的高度。In some embodiments, the outer diameter of the silica airgel
在一些实施例中,还包括:位于所述遮蔽图形202的表面的支撑柱(图中未示出),所述支撑柱的尺寸小于所述遮蔽图形202的尺寸,所述支撑柱的顶部表面与所述二氧化硅气凝胶保护罩205部分内表面接触。In some embodiments, it also includes: a supporting column (not shown in the figure) located on the surface of the shielding figure 202, the size of the supporting column is smaller than the size of the shielding figure 202, and the top surface of the supporting column Contact with the inner surface of the silica airgel
在一些实施例中,所述二氧化硅气凝胶保护罩205通过第一粘附层207粘附在所述透明基板的边缘区域表面。In some embodiments, the silica airgel
在一些实施例中,所述二氧化硅气凝胶保护罩205的折射率<1.01,透光率>=90%,孔径粒径为1~6nm,密度<3kg/m3,在该特定参数下,所述二氧化硅气凝胶保护罩205能更好的吸收铵根离子、硫酸根离子和相应的污染颗粒(particle),同时对曝光光线的影响最小。In some embodiments, the silica airgel
在一些实施例中,还包括,位于所述环形框架204和所述透明基板201的边缘区域22表面之间的第二粘附层201。In some embodiments, it further includes a second
在一些实施例中,采用本申请的光掩膜版进行曝光时的曝光光线的波长为193nm-436nm。In some embodiments, the wavelength of the exposure light when using the photomask of the present application for exposure is 193nm-436nm.
需要说明的是,本申请光掩膜版的一些实施例中与前述光掩膜版形成方法的一些实施例中相同或相似部分的限定或描述在此不再赘述,具体请参考前述光掩膜版形成方法的一些实施例中相应部分的限定或描述。It should be noted that the definitions or descriptions of the same or similar parts in some embodiments of the photomask of the present application as in some embodiments of the aforementioned photomask forming method will not be repeated here. For details, please refer to the aforementioned photomask Definitions or descriptions of corresponding parts in some embodiments of the plate forming method.
本申请虽然已以较佳实施例公开如上,但其并不是用来限定本申请,任何本领域技术人员在不脱离本申请的精神和范围内,都可以利用上述揭示的方法和技术内容对本申请技术方案做出可能的变动和修改,因此,凡是未脱离本申请技术方案的内容,依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化及修饰,均属于本申请技术方案的保护范围。Although the present application has been disclosed as above with preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can use the methods and technical contents disclosed above to analyze the present application without departing from the spirit and scope of the present application. Possible changes and modifications are made in the technical solution. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the application without departing from the content of the technical solution of the application belong to the technical solution of the application. protected range.
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US20040137339A1 (en) * | 2002-10-29 | 2004-07-15 | Dupont Photomasks, Inc. | Photomask assembly and method for protecting the same from contaminants generated during a lithography process |
KR20100024097A (en) * | 2008-08-25 | 2010-03-05 | 주식회사 하이닉스반도체 | Photomask with pellicle |
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