CN115261863A - A kind of metal particle corrosion solution and metal corrosion method for fast recovery diode - Google Patents
A kind of metal particle corrosion solution and metal corrosion method for fast recovery diode Download PDFInfo
- Publication number
- CN115261863A CN115261863A CN202210923562.8A CN202210923562A CN115261863A CN 115261863 A CN115261863 A CN 115261863A CN 202210923562 A CN202210923562 A CN 202210923562A CN 115261863 A CN115261863 A CN 115261863A
- Authority
- CN
- China
- Prior art keywords
- corrosion
- metal
- solution
- sodium hydroxide
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
技术领域technical field
本发明涉及快恢复二极管技术领域,特别涉及一种用于快恢复二极管的金属颗粒腐蚀液及金属腐蚀方法。The invention relates to the technical field of fast recovery diodes, in particular to a metal particle corrosion solution and a metal corrosion method for fast recovery diodes.
背景技术Background technique
目前,快恢复二极管制备过程中,在蒸发、光刻制备金属层后需进行金属腐蚀工艺处理。金属腐蚀目的是将经过曝光、显影后的光刻胶微图形中下层材料的裸露部分去掉,即在下层材料上重现与光刻胶相同的图形。At present, in the process of manufacturing fast recovery diodes, a metal corrosion process is required after the metal layer is prepared by evaporation and photolithography. The purpose of metal corrosion is to remove the exposed part of the underlying material in the photoresist micropattern after exposure and development, that is, to reproduce the same pattern as the photoresist on the underlying material.
金属腐蚀处理后,按照常规流程进行冲水、甩干工艺。但产品测试后发现制品间漏电一致性差,且部分制品存在漏电异常情况。另外,经显微镜下观察,发现金属腐蚀、冲水处理后的部分制品在腐蚀区域残留少许金属颗粒,冲水工艺无法完全清除,后续测试时,残留金属导致了漏电异常情况。After the metal corrosion treatment, the flushing and drying process is carried out according to the conventional process. However, after product testing, it was found that the leakage consistency between products was poor, and some products had abnormal leakage. In addition, through observation under a microscope, it was found that metal corrosion and some products after flushing treatment left a little metal particles in the corroded area, which could not be completely removed by the flushing process. During subsequent tests, the residual metal caused abnormal leakage.
发明内容Contents of the invention
本申请通过提供一种用于快恢复二极管的金属颗粒腐蚀液及金属腐蚀方法,至少部分解决上述问题。The present application at least partly solves the above problems by providing a metal particle corrosion solution and a metal corrosion method for fast recovery diodes.
本申请实施例提供了一种快恢复二极管的金属颗粒腐蚀液,包括体积比为1:0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15的水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液,其中乙二胺四乙酸混合液中水、乙二胺四乙酸质量比为40-66:1。The embodiment of the present application provides a metal particle corrosion solution for fast recovery diodes, which includes water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylene di The mixed solution of amine tetraacetic acid, wherein the mass ratio of water and ethylenediamine tetraacetic acid in the mixed solution of ethylenediamine tetraacetic acid is 40-66:1.
上述实施例的有益效果在于:该金属颗粒腐蚀液可以有效去除解现有技术中腐蚀区域残留的少许金属颗粒,从而减少了漏电异常情况The beneficial effect of the above embodiment is that: the metal particle corrosion solution can effectively remove a little metal particles remaining in the corrosion area in the prior art, thereby reducing the abnormal leakage
在上述实施例基础上,本申请可进一步改进,具体如下:On the basis of the foregoing embodiments, the present application can be further improved, specifically as follows:
在本申请其中一个实施例中,所述金属颗粒腐蚀液还包括氢氧化钠溶液,所述水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液和氢氧化钠溶液,对应体积比为1:0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15:0.1-0.15,其中氢氧化钠溶液中,氢氧化钠质量百分浓度为1.5-2.5%。添加氢氧化钠溶液后可避免晶片经该金属颗粒腐蚀液浸泡后出现变色现象,保持晶片表面金属颜色一致。In one of the embodiments of the present application, the metal particle corrosion solution also includes sodium hydroxide solution, and the water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediaminetetraacetic acid mixed solution and sodium hydroxide solution have a corresponding volume ratio of 1: 0.7-0.8: 0.2-0.3: 0.2-0.3: 0.1-0.15: 0.1-0.15, wherein in the sodium hydroxide solution, the mass percent concentration of sodium hydroxide is 1.5-2.5%. Adding the sodium hydroxide solution can prevent discoloration of the chip after being soaked in the metal particle corrosion solution, and keep the metal color of the chip surface consistent.
在本申请其中一个实施例中,所述水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液和氢氧化钠溶液,对应体积比为1:0.75:0.25:0.25:0.125:0.125,其中,乙二胺四乙酸混合液中水、乙二胺四乙酸质量比为50:1,氢氧化钠溶液中,氢氧化钠质量百分浓度为2%。In one of the embodiments of the present application, the corresponding volume ratio of the water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediaminetetraacetic acid mixed solution and sodium hydroxide solution is 1:0.75:0.25:0.25:0.125:0.125, wherein , the mass ratio of water and EDTA in the EDTA mixture is 50:1, and in the sodium hydroxide solution, the mass percentage concentration of sodium hydroxide is 2%.
在本申请其中一个实施例中,所述金属颗粒腐蚀液配置方法如下:In one of the embodiments of the present application, the configuration method of the metal particle corrosion solution is as follows:
按上述比例将水与乙二胺四乙酸粉末混合调配出乙二胺四乙酸混合液,将水与氢氧化钠粉末混合调配出氢氧化钠溶液;Mix water and ethylenediaminetetraacetic acid powder according to the above ratio to prepare an ethylenediaminetetraacetic acid mixed solution, and mix water and sodium hydroxide powder to prepare a sodium hydroxide solution;
将乙二胺四乙酸混合液和氢氧化钠溶液静置1h以上;Let the mixed solution of ethylenediaminetetraacetic acid and sodium hydroxide solution stand still for more than 1 hour;
按上述比例将水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液混合后再加入氢氧化钠溶液混合调配出所述金属颗粒腐蚀液。Mix water, hydrogen peroxide, ammonia water, glacial acetic acid, and ethylenediaminetetraacetic acid mixture according to the above ratio, and then add sodium hydroxide solution to mix and prepare the metal particle corrosion solution.
本申请实施例还提供了一种快恢复二极管的金属腐蚀方法,依次包括以下步骤:The embodiment of the present application also provides a metal corrosion method for a fast recovery diode, which includes the following steps in sequence:
将光刻后的晶片放置于酸洗花篮中,按常规方式进行初步金属腐蚀处理;Place the wafer after photolithography in the pickling flower basket, and perform preliminary metal corrosion treatment in a conventional manner;
将初步金属腐蚀处理后的所述晶片,浸泡于前述金属颗粒腐蚀液中,金属颗粒腐蚀液温度为18-22℃,浸泡时间为50-70s,浸泡期间持续抖动所述酸洗花篮,完成二次腐蚀;The wafer after preliminary metal corrosion treatment is soaked in the aforementioned metal particle corrosion solution, the temperature of the metal particle corrosion solution is 18-22°C, the soaking time is 50-70s, and the pickling flower basket is continuously shaken during the soaking period to complete the second secondary corrosion;
将二次腐蚀处理后的所述晶片,冲水、甩干处理后,放置于恒定环境中干燥。The wafer after the secondary etching treatment is rinsed with water and dried by drying, and then placed in a constant environment to dry.
上述实施例的有益效果在于:在常规腐蚀的基础上增加一槽金属颗粒腐蚀液进行二次腐蚀,有效的解决了腐蚀后制品表面金属颗粒残留问题,保证制品不会因为金属颗粒问题导致的漏电突变现象;同时在二次腐蚀后增加干燥步骤,去除制品因腐蚀冲水带来的水汽,保证产品漏电的一致性。The beneficial effects of the above embodiment are: on the basis of conventional corrosion, a tank of metal particle corrosion solution is added for secondary corrosion, which effectively solves the problem of metal particles remaining on the surface of the product after corrosion, and ensures that the product will not leak electricity due to metal particles. mutation phenomenon; at the same time, a drying step is added after the secondary corrosion to remove the water vapor brought by the product due to corrosion and flushing, so as to ensure the consistency of product leakage.
在本申请其中一个实施例中,二次腐蚀时,所述金属颗粒腐蚀液温度为18℃,浸泡时间为60s。In one embodiment of the present application, during the secondary corrosion, the temperature of the metal particle corrosion solution is 18° C., and the immersion time is 60 s.
在本申请其中一个实施例中,所述恒定环境温度为20℃,湿度为15%,干燥时间为20-24h。In one of the embodiments of the present application, the constant ambient temperature is 20° C., the humidity is 15%, and the drying time is 20-24 hours.
在本申请其中一个实施例中,所述酸洗花篮材质为特氟隆,所述酸洗花篮包括蒙面和H面,所述酸洗花篮在蒙面上间隔开设有多个通孔,所述通孔内径从内至外逐渐减小。通过在蒙面开设喇叭口型通孔来优化酸洗花篮,可以有效的改善金属腐蚀片间侧腐蚀量差异,起到花篮内腐蚀量均衡的效果,保证产品漏电的一致性,同时也降低了金属腐蚀的返工率。In one embodiment of the present application, the material of the pickling flower basket is Teflon, the pickling flower basket includes a mask and an H surface, and the pickling flower basket is provided with a plurality of through holes at intervals on the mask surface, so The inner diameter of the through hole gradually decreases from inside to outside. Optimizing the pickling flower basket by opening a bell-shaped through hole in the mask can effectively improve the difference in the amount of side corrosion between the metal corrosion sheets, achieve the effect of balancing the corrosion amount in the flower basket, ensure the consistency of product leakage, and reduce the Rework rates for metal corrosion.
本申请实施例中提供的一个或多个技术方案,至少具有如下技术效果或优点:One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:
1.在常规腐蚀的基础上进行二次腐蚀,通过金属颗粒腐蚀液有效的解决了腐蚀后制品表面金属颗粒残留问题,保证制品不会因为金属颗粒问题导致的漏电突变现象;1. Carry out secondary corrosion on the basis of conventional corrosion, and effectively solve the problem of residual metal particles on the surface of the product after corrosion through the metal particle corrosion solution, so as to ensure that the product will not have sudden leakage caused by metal particles;
2.在二次腐蚀后增加干燥步骤,去除制品因腐蚀冲水带来的水汽,保证产品漏电的一致性;2. Add a drying step after the secondary corrosion to remove the water vapor brought by the product due to corrosion and flushing to ensure the consistency of product leakage;
3.通过在蒙面开设喇叭口型通孔来优化酸洗花篮,可以有效的改善金属腐蚀片间侧腐蚀量差异,起到花篮内腐蚀量均衡的效果,保证产品漏电的一致性,同时也降低了金属腐蚀的返工率。3. By opening bell-shaped through holes in the mask to optimize the pickling flower basket, it can effectively improve the difference in the amount of side corrosion between the metal corrosion sheets, achieve the effect of balancing the amount of corrosion in the flower basket, and ensure the consistency of product leakage. Reduced rework rates for metal corrosion.
附图说明Description of drawings
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍。在所有附图中,类似的元件或部分一般由类似的附图标记标识。附图中,各元件或部分并不一定按照实际的比例绘制。In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the description of the specific embodiments or the prior art. Throughout the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, elements or parts are not necessarily drawn in actual scale.
图1为实施例2中一种快恢复二极管的金属腐蚀方法的步骤流程图;Fig. 1 is the step flowchart of the metal corrosion method of a kind of fast recovery diode in embodiment 2;
图2为实施例3中酸洗花篮的结构示意图。Fig. 2 is the structural representation of pickling flower basket in embodiment 3.
其中,1.蒙面,2.H面,3.通孔。Among them, 1. Masked surface, 2. H surface, 3. Through hole.
具体实施方式Detailed ways
下面结合具体实施方式,进一步阐明本发明,应理解这些实施方式仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。Below in conjunction with specific embodiment, further illustrate the present invention, it should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention, after reading the present invention, those skilled in the art will understand the various equivalent forms of the present invention All modifications fall within the scope defined by the appended claims of the present application.
应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步定义和解释。It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.
在本发明的描述中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本发明描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In describing the present invention, the schematic representations of the above terms are not necessarily referring to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present invention and features of different embodiments or examples under the condition of not contradicting each other.
本申请实施例通过提供一种用于快恢复二极管的金属颗粒腐蚀液及金属腐蚀方法,解决现有技术中腐蚀区域残留的少许金属颗粒,导致制品漏电异常情况的问题。The embodiments of the present application provide a metal particle corrosion solution and a metal corrosion method for fast recovery diodes to solve the problem in the prior art that a small amount of metal particles remain in the corrosion area, resulting in abnormal leakage of the product.
本申请实施例中的技术方案为解决上述问题,总体思路如下:The technical solution in the embodiment of the present application is to solve the above problems, and the general idea is as follows:
实施例1:Example 1:
一种快恢复二极管的金属颗粒腐蚀液,包括体积比为1:0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15:0.1-0.15的水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液、氢氧化钠溶液,其中乙二胺四乙酸混合液中水、乙二胺四乙酸质量比为40-66:1,氢氧化钠溶液中,氢氧化钠质量百分浓度为1.5-2.5%。A metal particle corrosion solution for fast recovery diodes, including water, hydrogen peroxide, ammonia water, glacial acetic acid, and ethylenediamine tetrachloride in a volume ratio of 1:0.7-0.8:0.2-0.3:0.2-0.3:0.1-0.15:0.1-0.15 Acetic acid mixture and sodium hydroxide solution, wherein the mass ratio of water to ethylenediaminetetraacetic acid in the EDTA mixture is 40-66:1, and the sodium hydroxide solution has a mass percent concentration of 1.5- 2.5%.
其中,水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液和氢氧化钠溶液,优选体积比为1:0.75:0.25:0.25:0.125:0.125。乙二胺四乙酸混合液中水、乙二胺四乙酸优选质量比为50:1,氢氧化钠溶液中,氢氧化钠优选质量百分浓度为2%。Among them, the preferred volume ratio of water, hydrogen peroxide, ammonia water, glacial acetic acid, ethylenediamine tetraacetic acid mixed solution and sodium hydroxide solution is 1:0.75:0.25:0.25:0.125:0.125. The preferred mass ratio of water and EDTA in the EDTA mixed solution is 50:1, and in the sodium hydroxide solution, the preferred mass percentage concentration of sodium hydroxide is 2%.
上述配比的金属颗粒腐蚀液可有效去除Ag、Ti、Ni、AL等金属颗粒。The metal particle corrosion solution with the above ratio can effectively remove metal particles such as Ag, Ti, Ni, Al, etc.
具体的,金属颗粒腐蚀液配置方法如下:Specifically, the metal particle corrosion solution configuration method is as follows:
按上述比例将水与乙二胺四乙酸粉末混合调配出乙二胺四乙酸混合液,将水与氢氧化钠粉末混合调配出氢氧化钠溶液;Mix water and ethylenediaminetetraacetic acid powder according to the above ratio to prepare an ethylenediaminetetraacetic acid mixed solution, and mix water and sodium hydroxide powder to prepare a sodium hydroxide solution;
将乙二胺四乙酸混合液和氢氧化钠溶液静置1h以上;Let the mixed solution of ethylenediaminetetraacetic acid and sodium hydroxide solution stand still for more than 1 hour;
按上述比例将水、双氧水、氨水、冰乙酸、乙二胺四乙酸混合液混合后再加入氢氧化钠溶液混合调配出金属颗粒腐蚀液。Mix water, hydrogen peroxide, ammonia water, glacial acetic acid, and ethylenediaminetetraacetic acid mixture according to the above ratio, and then add sodium hydroxide solution to mix and prepare a metal particle corrosion solution.
需要说明的是,该金属腐蚀液需现配现用,一般仅能在配置完成后5h内使用。It should be noted that the metal corrosion solution needs to be prepared and used immediately, and generally can only be used within 5 hours after the configuration is completed.
实施例2:Example 2:
如图1所示,一种快恢复二极管的金属腐蚀方法,依次包括以下步骤:As shown in Figure 1, a metal corrosion method for a fast recovery diode comprises the following steps in turn:
S1:初步腐蚀:将光刻后的晶片放置于酸洗花篮中,按常规方式进行初步金属腐蚀处理。S1: Preliminary corrosion: place the photoetched wafer in a pickling flower basket, and perform preliminary metal corrosion treatment in a conventional manner.
可采用的初步腐蚀常规方式示例如下:先将晶片放入硝化酸混合腐蚀液中腐蚀金属Ag、Ni,腐蚀时间为150-160s,腐蚀后,放入水槽冲水10min,冲水结束后再将制品放入B溶液(1:200=HF:H2O)中腐蚀金属Ti,腐蚀时间为30-35s,腐蚀后,冲水10min,冲水结束后,再降制品放入Al腐蚀液中腐蚀金属Al,腐蚀时间为290-310s,腐蚀后冲水20min,冲水结束后完成初步腐蚀,初步腐蚀后会有少量颗粒状金属被氧化或碳化而残留。An example of the general method of preliminary corrosion that can be used is as follows: first put the wafer into the nitrifying acid mixed corrosion solution to corrode metal Ag and Ni, the corrosion time is 150-160s, after corrosion, put it into the water tank for 10 minutes, and then put it Put the product into the B solution (1:200=HF:H2O) to corrode metal Ti, the corrosion time is 30-35s, after the corrosion, flush with water for 10 minutes, after the flushing is completed, put the product into the Al corrosion solution to corrode metal Al , The corrosion time is 290-310s, flush with water for 20 minutes after corrosion, and complete the preliminary corrosion after flushing, after the preliminary corrosion, a small amount of granular metal will be oxidized or carbonized and remain.
S2:二次腐蚀:将初步金属腐蚀处理后的晶片,浸泡于如实施例1的金属颗粒腐蚀液中,金属颗粒腐蚀液温度为18-22℃,浸泡时间50-70s,浸泡期间操作人员持续抖动酸洗花篮,完成二次腐蚀。S2: Secondary corrosion: soak the wafer after preliminary metal corrosion treatment in the metal particle corrosion solution as in Example 1, the temperature of the metal particle corrosion solution is 18-22°C, and the soaking time is 50-70s. Shake the pickling flower basket to complete the secondary corrosion.
其中,金属颗粒腐蚀液优选温度为18℃,浸泡时间为60s。温度过高,容易出现过腐蚀现象,即环边缘线条有凸点,不便操作。因此,降低腐蚀温度,而延长浸泡时间,可提高产品良率。Among them, the preferred temperature of the metal particle corrosion solution is 18°C, and the soaking time is 60s. If the temperature is too high, over-corrosion is prone to occur, that is, there are bumps on the edge of the ring, which is inconvenient to operate. Therefore, reducing the corrosion temperature and prolonging the soaking time can improve the product yield.
S3:干燥:将二次腐蚀处理后的晶片,冲水、甩干处理后,放置于恒定环境中干燥。S3: Drying: the wafer after the secondary corrosion treatment is rinsed with water and dried, and then placed in a constant environment to dry.
其中,恒定环境优选温度为20℃,湿度为15%,干燥时间为20-24h。腐蚀过程中残留水汽带来的可动离子可能会导致制品出现少量漏电不稳定情况。因此在标准恒定环境中进行干燥,可去除水汽从而保证产品漏电的一致性,提高产品良率。Among them, the preferred temperature of the constant environment is 20°C, the humidity is 15%, and the drying time is 20-24h. The mobile ions brought by the residual water vapor during the corrosion process may cause a small amount of leakage instability in the product. Therefore, drying in a standard constant environment can remove water vapor to ensure the consistency of product leakage and improve product yield.
实施例3:Example 3:
在实施例2中,初步腐蚀及二次腐蚀步骤时使用的酸洗花篮如图2所示,该酸洗花篮材质为特氟隆,包括蒙面1和H面2,该酸洗花篮在蒙面1上间隔开设有多个通孔3,通孔3内径从内至外逐渐减小。In Example 2, the pickling flower basket used in the primary corrosion and secondary corrosion steps is shown in Figure 2. The pickling flower basket is made of Teflon, including mask 1 and H surface 2. A plurality of through holes 3 are spaced apart on the surface 1, and the inner diameters of the through holes 3 gradually decrease from inside to outside.
清洗、腐蚀处理中需常使用特氟隆花篮。为了预防颗粒落在制品表面及避免特氟隆花篮在酸洗过程中变形,所以特氟隆花篮结构上均包括蒙面。但由于蒙面的阻挡,酸液流通性差,导致靠近蒙面的一侧腐蚀效果差,金属腐蚀后花篮内晶片间腐蚀效果有差异,且制品加工结束后测试发现,部分晶片存在漏电大的问题,导致良率低。Teflon flower baskets are often used in cleaning and corrosion treatment. In order to prevent the particles from falling on the surface of the product and avoid the deformation of the Teflon flower basket during the pickling process, the structure of the Teflon flower basket includes a mask. However, due to the blocking of the mask, the acid fluidity is poor, resulting in poor corrosion effect on the side close to the mask. After metal corrosion, the corrosion effect of the wafers in the flower basket is different, and after the product is processed, it is found that some wafers have a large leakage problem. , leading to low yield.
如下表一、表二所示,其中,片号1-5、26-30均为靠近蒙面的晶片。通过在蒙面开设喇叭口型通孔来优化酸洗花篮,可以有效的改善金属腐蚀片间侧腐蚀量差异,起到花篮内腐蚀量均衡的效果,保证产品漏电的一致性,同时也降低了金属腐蚀的返工率。As shown in Table 1 and Table 2 below, chip numbers 1-5 and 26-30 are wafers close to the mask. Optimizing the pickling flower basket by opening a bell-shaped through hole in the mask can effectively improve the difference in the amount of side corrosion between the metal corrosion sheets, achieve the effect of balancing the corrosion amount in the flower basket, ensure the consistency of product leakage, and reduce the Rework rates for metal corrosion.
表一、酸洗花篮优化前金属腐蚀效果表Table 1. Metal corrosion effect table before optimization of pickling flower basket
表二、酸洗花篮优化后金属腐蚀效果表Table 2. Metal corrosion effect table after optimization of pickling flower basket
上述本申请实施例中的技术方案,至少具有如下的技术效果或优点:The above-mentioned technical solutions in the embodiments of the present application have at least the following technical effects or advantages:
1.在常规腐蚀的基础上进行二次腐蚀,通过金属颗粒腐蚀液有效的解决了腐蚀后制品表面金属颗粒残留问题,保证制品不会因为金属颗粒问题导致的漏电突变现象;1. Carry out secondary corrosion on the basis of conventional corrosion, and effectively solve the problem of residual metal particles on the surface of the product after corrosion through the metal particle corrosion solution, so as to ensure that the product will not have sudden leakage caused by metal particles;
2.在二次腐蚀后增加干燥步骤,去除制品因腐蚀冲水带来的水汽,保证产品漏电的一致性;2. Add a drying step after the secondary corrosion to remove the water vapor brought by the product due to corrosion and flushing to ensure the consistency of product leakage;
3.通过在蒙面开设喇叭口型通孔来优化酸洗花篮,可以有效的改善金属腐蚀片间侧腐蚀量差异,起到花篮内腐蚀量均衡的效果,保证产品漏电的一致性,同时也降低了金属腐蚀的返工率。3. By opening bell-shaped through holes in the mask to optimize the pickling flower basket, it can effectively improve the difference in the amount of side corrosion between the metal corrosion sheets, achieve the effect of balancing the amount of corrosion in the flower basket, and ensure the consistency of product leakage. Reduced rework rates for metal corrosion.
尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and those skilled in the art can make the above-mentioned The embodiments are subject to changes, modifications, substitutions and variations.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210923562.8A CN115261863B (en) | 2022-08-02 | 2022-08-02 | Metal particle corrosive liquid for fast recovery diode and metal corrosion method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210923562.8A CN115261863B (en) | 2022-08-02 | 2022-08-02 | Metal particle corrosive liquid for fast recovery diode and metal corrosion method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115261863A true CN115261863A (en) | 2022-11-01 |
CN115261863B CN115261863B (en) | 2024-03-26 |
Family
ID=83747223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210923562.8A Active CN115261863B (en) | 2022-08-02 | 2022-08-02 | Metal particle corrosive liquid for fast recovery diode and metal corrosion method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115261863B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118522644A (en) * | 2024-07-25 | 2024-08-20 | 广东佛智芯微电子技术研究有限公司 | Substrate surface treatment method |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5462638A (en) * | 1994-06-15 | 1995-10-31 | International Business Machines Corporation | Selective etching of TiW for C4 fabrication |
US5462892A (en) * | 1992-06-22 | 1995-10-31 | Vlsi Technology, Inc. | Semiconductor processing method for preventing corrosion of metal film connections |
JPH0813166A (en) * | 1994-06-27 | 1996-01-16 | Nippondenso Co Ltd | Etching liquid for titanium nitride and titanium |
JPH1022244A (en) * | 1996-06-29 | 1998-01-23 | Komatsu Electron Metals Co Ltd | Basket for cleaning semiconductor wafer |
US20040069528A1 (en) * | 2001-08-09 | 2004-04-15 | Dowa Mining Co., Ltd. | Process for producing ceramic circuit boards |
DE60224050D1 (en) * | 2002-10-11 | 2008-01-24 | Dowa Metaltech Co Ltd | Process for the production of ceramic circuit boards |
KR20080085746A (en) * | 2007-03-20 | 2008-09-24 | 후지쯔 가부시끼가이샤 | Manufacturing Method of Semiconductor Device and Semiconductor Manufacturing Device |
CN104498951A (en) * | 2014-12-11 | 2015-04-08 | 深圳新宙邦科技股份有限公司 | Oxydol etching solution for copper-molybdenum alloy films |
CN107858685A (en) * | 2017-11-15 | 2018-03-30 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
CN210805808U (en) * | 2019-12-24 | 2020-06-19 | 苏州阿特斯阳光电力科技有限公司 | A kind of uniform flow plate for etching groove and etching groove |
CN112251818A (en) * | 2020-09-29 | 2021-01-22 | 威科赛乐微电子股份有限公司 | Wafer etching solution and etching method |
CN112259455A (en) * | 2020-10-19 | 2021-01-22 | 扬州扬杰电子科技股份有限公司 | Method for improving metal residue of Ag surface product with passivation layer structure |
CN112259456A (en) * | 2020-10-19 | 2021-01-22 | 扬州扬杰电子科技股份有限公司 | Corrosion process for improving metal corrosion residue on surface of passivation layer |
WO2021081882A1 (en) * | 2019-10-31 | 2021-05-06 | 东莞东阳光科研发有限公司 | Reaming etching solution, etching process and electrode foil |
-
2022
- 2022-08-02 CN CN202210923562.8A patent/CN115261863B/en active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5462892A (en) * | 1992-06-22 | 1995-10-31 | Vlsi Technology, Inc. | Semiconductor processing method for preventing corrosion of metal film connections |
US5462638A (en) * | 1994-06-15 | 1995-10-31 | International Business Machines Corporation | Selective etching of TiW for C4 fabrication |
JPH0813166A (en) * | 1994-06-27 | 1996-01-16 | Nippondenso Co Ltd | Etching liquid for titanium nitride and titanium |
JPH1022244A (en) * | 1996-06-29 | 1998-01-23 | Komatsu Electron Metals Co Ltd | Basket for cleaning semiconductor wafer |
US20040069528A1 (en) * | 2001-08-09 | 2004-04-15 | Dowa Mining Co., Ltd. | Process for producing ceramic circuit boards |
DE60224050D1 (en) * | 2002-10-11 | 2008-01-24 | Dowa Metaltech Co Ltd | Process for the production of ceramic circuit boards |
KR20080085746A (en) * | 2007-03-20 | 2008-09-24 | 후지쯔 가부시끼가이샤 | Manufacturing Method of Semiconductor Device and Semiconductor Manufacturing Device |
CN104498951A (en) * | 2014-12-11 | 2015-04-08 | 深圳新宙邦科技股份有限公司 | Oxydol etching solution for copper-molybdenum alloy films |
CN107858685A (en) * | 2017-11-15 | 2018-03-30 | 深圳市华星光电技术有限公司 | Etching solution and its application for copper/molybdenum film layer |
WO2021081882A1 (en) * | 2019-10-31 | 2021-05-06 | 东莞东阳光科研发有限公司 | Reaming etching solution, etching process and electrode foil |
CN210805808U (en) * | 2019-12-24 | 2020-06-19 | 苏州阿特斯阳光电力科技有限公司 | A kind of uniform flow plate for etching groove and etching groove |
CN112251818A (en) * | 2020-09-29 | 2021-01-22 | 威科赛乐微电子股份有限公司 | Wafer etching solution and etching method |
CN112259455A (en) * | 2020-10-19 | 2021-01-22 | 扬州扬杰电子科技股份有限公司 | Method for improving metal residue of Ag surface product with passivation layer structure |
CN112259456A (en) * | 2020-10-19 | 2021-01-22 | 扬州扬杰电子科技股份有限公司 | Corrosion process for improving metal corrosion residue on surface of passivation layer |
Non-Patent Citations (1)
Title |
---|
(美)安德鲁·特拉诺瓦: "《造物还原 改变世界的37种物品》", 北京时代华文书局, pages: 309 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118522644A (en) * | 2024-07-25 | 2024-08-20 | 广东佛智芯微电子技术研究有限公司 | Substrate surface treatment method |
Also Published As
Publication number | Publication date |
---|---|
CN115261863B (en) | 2024-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI594088B (en) | Post ion implant stripper for advanced semiconductor application | |
CN110828299A (en) | A kind of texturing cleaning method and heterojunction battery | |
CN108231540A (en) | A kind of rear cleaning applied to solar cell making herbs into wool | |
CN107742662B (en) | A honeycomb wet-process black silicon suede structure and its preparation method and black silicon battery and its preparation method | |
CN107765514A (en) | A kind of cleaning fluid containing azanol, its preparation method and application | |
CN115261863A (en) | A kind of metal particle corrosion solution and metal corrosion method for fast recovery diode | |
CN107229194B (en) | A kind of fluorine-containing plasma etching residue cleaning, preparation method and application | |
TW200426917A (en) | Method for removing photoresist in semiconductor manufacturing process | |
TW201723166A (en) | A cleaning liquid for removing photoresist residue, with little corrosion on base material | |
CN101685273B (en) | Cleanout fluid for removing photoresist layer residue | |
CN107229192A (en) | A kind of fluorine-containing plasma etching residue cleaning, its preparation method and application | |
CN113820927B (en) | Positive photoresist stripping liquid composition | |
CN1645259B (en) | Photoresist residue remover composition and manufacture of semiconductor circuit components | |
CN103668467A (en) | Polycrystalline silicon wafer texturization additive and application thereof | |
CN102051283B (en) | Hydroxylamine-containing cleaning solution and use thereof | |
CN106449398A (en) | A technique reducing photolithography wet etching and undercutting | |
KR100520819B1 (en) | method of cleaning a substrate | |
CN107300839B (en) | A kind of fluorine-containing plasma etching residue cleaning, preparation method and application | |
CN111303883B (en) | A kind of etching solution and preparation method of chip mesa | |
CN114899244B (en) | A kind of preparation method of gallium arsenide solar cell | |
CN115602760B (en) | Texturing method of silicon wafer and solar cell | |
TWI431112B (en) | Hydroxylamine - containing cleaning solution and its application | |
JPH0427123A (en) | Washing method | |
CN112233967B (en) | Processing method for improving abnormal falling of back metal and substrate Si | |
JP4244734B2 (en) | Resist stripping solution for substrate process of single wafer cleaning apparatus and stripping method using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |