CN115261790A - Nanostructured titanium nitride coating with high photo-thermal performance and preparation method thereof - Google Patents
Nanostructured titanium nitride coating with high photo-thermal performance and preparation method thereof Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 106
- 239000011248 coating agent Substances 0.000 title claims abstract description 94
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 239000002073 nanorod Substances 0.000 claims abstract description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 22
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- 229910052786 argon Inorganic materials 0.000 claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000013077 target material Substances 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
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Abstract
本发明公开了一种高光热性能的纳米结构氮化钛涂层及制备方法,包括以下步骤:步骤1:以金属钛作为靶材,将基片与靶材相对设置;基片与靶面两个面之间的夹角为45°~80°;步骤2:步骤2:通入氩气和氮气,采用高功率脉冲磁控溅射进行沉积,放电功率密度为1.0 W/cm2~4.5 W/cm2,峰值功率密度为200 W/cm2~350 W/cm2,沉积时间为30 s~60 s;步骤3:采用直流磁控溅射进行沉积,放电功率密度为3.5 W/cm2~5.0 W/cm2,沉积时间为15 min~25 min;溅射结束冷却后即可得到所需氮化钛涂层;本发明采用高功率脉冲磁控溅射和直流磁控溅射相结合,得到一种与基材结合力高、具有纳米棒结构,纳米棒排列结构紧密,顶端具有尖锐结构的氮化钛涂层;该涂层具有连续可调的光热性能。
The invention discloses a nanostructured titanium nitride coating with high photothermal performance and a preparation method, comprising the following steps: Step 1: using titanium metal as a target material, and arranging a substrate and the target oppositely; the substrate and the target surface The angle between the two surfaces is 45°~80°; Step 2: Step 2: Pour argon and nitrogen gas, and use high-power pulsed magnetron sputtering for deposition, and the discharge power density is 1.0 W/cm 2 ~4.5 W/cm 2 , the peak power density is 200 W/cm 2 -350 W/cm 2 , the deposition time is 30 s - 60 s; Step 3: DC magnetron sputtering is used for deposition, and the discharge power density is 3.5 W/cm 2 to 5.0 W/cm 2 , and the deposition time is 15 min to 25 min; the desired titanium nitride coating can be obtained after cooling after sputtering; the present invention adopts high-power pulse magnetron sputtering and DC magnetron sputtering phase. Combined to obtain a titanium nitride coating with high binding force to the substrate, nanorod structure, close arrangement of nanorods and sharp structure at the top; the coating has continuously adjustable photothermal properties.
Description
技术领域technical field
本发明涉及涂层制备技术领域,具体涉及一种高光热性能的纳米结构氮化钛涂层及制备方法。The invention relates to the technical field of coating preparation, in particular to a nanostructure titanium nitride coating with high photothermal performance and a preparation method.
背景技术Background technique
具有光热效应的涂层由于能够有效的将光转化为热,在能源、环境和医学相关领域具有广泛的应用。过渡族金属氮化物在可见光和近红外区域的吸收波长宽、热稳定性好、强度高,是高温、腐蚀、磨损服役环境下的理想光热材料。过渡族金属氮化物光热涂层的制备方法有物理气相沉积和化学气相沉积。化学气相沉积因高温制程,限制了过渡族金属氮化物涂层在温度敏感基片上的制备,而物理气相沉积则能更广泛适用。磁控溅射作为物理气相沉积的一种,因其经济性和可靠性,是工业界制备涂层的首选技术手段。但是,磁控溅射制备的过渡族金属氮化物光热涂层响应速度慢、光热效率低。Coatings with photothermal effects have a wide range of applications in energy, environment, and medical related fields due to their ability to efficiently convert light into heat. Transition metal nitrides have wide absorption wavelengths in the visible and near-infrared regions, good thermal stability, and high strength. They are ideal photothermal materials for high-temperature, corrosion, and wear-and-tear service environments. The preparation methods of transition metal nitride photothermal coatings include physical vapor deposition and chemical vapor deposition. Due to the high-temperature process of chemical vapor deposition, the preparation of transition metal nitride coatings on temperature-sensitive substrates is limited, while physical vapor deposition is more widely applicable. Magnetron sputtering, as a kind of physical vapor deposition, is the preferred technical method for preparing coatings in the industry because of its economy and reliability. However, the transition metal nitride photothermal coating prepared by magnetron sputtering has slow response speed and low photothermal efficiency.
目前已有纳米柱、纳米孔和纳米沟槽阵列等纳米结构特征的过渡族金属氮化物涂层,因其大的光吸收截面、低的光反射率和更低的热导率,较常规柱状结构过渡族金属氮化物涂层表现出更优异的光热效果。但是纳米柱、纳米孔和纳米沟槽阵列等纳米结构的制备多需要紫外光刻和反应离子刻蚀等家该功能技术,制造成本较高。并且需要阳极氧化和后续高温氨化等多步骤加工,不仅工序复杂,同时面临无法在温度敏感基片上制造的难题。At present, there are transition group metal nitride coatings with nanostructure characteristics such as nanopillars, nanoholes and nanogroove arrays. Structural transition metal nitride coatings exhibit more excellent photothermal effects. However, the preparation of nanostructures such as nanopillars, nanoholes, and nanogroove arrays often requires such functional technologies as ultraviolet lithography and reactive ion etching, and the manufacturing cost is relatively high. Moreover, multi-step processing such as anodic oxidation and subsequent high-temperature ammoniation is required, which is not only complicated in the process, but also faces the difficulty of being unable to manufacture on temperature-sensitive substrates.
磁控溅射沉积涂层时,当等离子体束流与基片倾斜一定角度后(OAD),在“阴影效应”作用下,涂层也将出现纳米柱、纳米带等纳米结构特征。但是OAD沉积的过渡族金属氮化物涂层因结构疏松,面临着涂层硬度低、耐磨性差、结合力低,需后续处理以提高耐蚀性等问题。When the coating is deposited by magnetron sputtering, when the plasma beam is inclined at a certain angle (OAD) to the substrate, under the action of the "shadow effect", the coating will also have nanostructure features such as nanopillars and nanobelts. However, due to the loose structure of the transition metal nitride coating deposited by OAD, it faces problems such as low coating hardness, poor wear resistance, and low bonding force, and requires subsequent treatment to improve corrosion resistance.
发明内容Contents of the invention
本发明针对现有技术存在的问题提供一种结构致密、结合好、硬度高、耐磨、耐腐蚀的高光热性能纳米棒结构氮化钛涂层及制备方法。Aiming at the problems existing in the prior art, the present invention provides a nano-rod structure titanium nitride coating with compact structure, good bonding, high hardness, wear resistance and corrosion resistance and a preparation method thereof.
本发明采用的技术方案是:The technical scheme adopted in the present invention is:
一种高光热性能的纳米结构氮化钛涂层的制备方法,包括以下步骤:A method for preparing a nanostructured titanium nitride coating with high photothermal performance, comprising the following steps:
步骤1:以金属钛作为靶材,将基片与靶材相对设置;基片与靶面两个面之间的夹角为45°~80°;Step 1: Using metal titanium as the target material, set the substrate and the target material oppositely; the angle between the substrate and the two surfaces of the target surface is 45° to 80°;
步骤2:步骤2:通入氩气和氮气,采用高功率脉冲磁控溅射进行沉积,放电功率密度为1.0 W/cm2~4.5 W/cm2,峰值功率密度为200 W/cm2~350 W/cm2,沉积时间为30 s~60s;Step 2: Step 2: Introducing argon and nitrogen, using high-power pulsed magnetron sputtering for deposition, with a discharge power density of 1.0 W/cm 2 to 4.5 W/cm 2 and a peak power density of 200 W/cm 2 to 350 W/cm 2 , the deposition time is 30 s ~ 60 s;
步骤3:采用直流磁控溅射进行沉积,放电功率密度为3.5 W/cm2~5.0 W/cm2,沉积时间为15 min~25 min;溅射结束冷却后即可得到所需氮化钛涂层。Step 3: Deposit by DC magnetron sputtering, the discharge power density is 3.5 W/cm 2 to 5.0 W/cm 2 , and the deposition time is 15 min to 25 min; the desired titanium nitride can be obtained after cooling after sputtering coating.
进一步的,所述靶材面积大于基片面积1.5倍,基片中心与靶面中心距离为80 mm~120 mm。Further, the area of the target is 1.5 times larger than the area of the substrate, and the distance between the center of the substrate and the center of the target surface is 80 mm to 120 mm.
进一步的,所述氩气纯度大于99.9%,流量为30 sccm~50 sccm,分压为0.3 Pa~0.5 Pa。Further, the argon gas has a purity greater than 99.9%, a flow rate of 30 sccm-50 sccm, and a partial pressure of 0.3 Pa-0.5 Pa.
进一步的,所述氮气纯度大于99.9%,流量为5 sccm~12 sccm,分压为0.05 Pa~0.12 Pa。Further, the nitrogen purity is greater than 99.9%, the flow rate is 5 sccm-12 sccm, and the partial pressure is 0.05 Pa-0.12 Pa.
进一步的,所述步骤2中首先进行靶材溅射清洗和基片溅射清洗;Further, in the step 2, target material sputtering cleaning and substrate sputtering cleaning are first carried out;
靶材清洗时氩气气压为0.3 Pa~0.5 Pa,靶材清洗时放电功率密度为2.0 W/cm2~3.0 W/cm2,靶材清洗时间为5~15 分钟;The argon gas pressure is 0.3 Pa to 0.5 Pa when the target is cleaned, the discharge power density is 2.0 W/cm 2 to 3.0 W/cm 2 when the target is cleaned, and the target cleaning time is 5 to 15 minutes;
基片清洗时氩气气压为2.0 Pa~4.0 Pa,基片的负基片偏压为-1000~-1500 V,基片清洗时间为10~30分钟。When the substrate is cleaned, the argon gas pressure is 2.0 Pa to 4.0 Pa, the negative substrate bias voltage of the substrate is -1000 to -1500 V, and the substrate cleaning time is 10 to 30 minutes.
进一步的,所述步骤2和步骤3中沉积过程中基体基片偏压为-50 V~-150 V。Further, the bias voltage of the base substrate during the deposition process in step 2 and step 3 is -50 V to -150 V.
一种纳米结构氮化钛涂层,基材表面的氮化钛涂层为纳米棒结构,纳米棒紧密堆积,顶部尖锐;氮化钛纳米棒直径为100 nm~200 nm,氮化钛纳米棒向一侧倾斜;氮化钛纳米棒与基材垂线之间的夹角为24°~30°。A nanostructured titanium nitride coating, the titanium nitride coating on the surface of the substrate has a nanorod structure, the nanorods are closely packed, and the top is sharp; the diameter of the titanium nitride nanorods is 100 nm to 200 nm, and the titanium nitride nanorods Tilting to one side; the included angle between the titanium nitride nanorod and the vertical line of the substrate is 24°-30°.
本发明的有益效果是:The beneficial effects of the present invention are:
(1)本发明采用高功率脉冲磁控溅射和直流磁控溅射相结合,得到一种与基材结合力高、具有纳米棒结构,纳米棒排列结构紧密,顶端具有尖锐结构的氮化钛涂层;(1) The present invention combines high-power pulsed magnetron sputtering and DC magnetron sputtering to obtain a nitriding material with high bonding force with the substrate, nanorod structure, tight arrangement of nanorods, and sharp structure at the top. Titanium coating;
(2)本发明得到的氮化钛涂层具有连续可调的光热性能,通过对等离子数量入射角度的调整、沉积时间的调整,实现对纳米棒尺寸的连续调控;(2) The titanium nitride coating obtained in the present invention has continuously adjustable photothermal properties, and the continuous adjustment of the size of the nanorods can be realized by adjusting the incident angle of the plasma quantity and the adjustment of the deposition time;
(3)本发明得到的氮化钛涂层经1.0 W/cm2 808 nm激光照射后,涂层表面温度最高可达100 ℃,其光热性能大幅超过现有过渡族金属氮化物涂层;(3) After the titanium nitride coating obtained in the present invention is irradiated with a 1.0 W/cm 2 808 nm laser, the surface temperature of the coating can reach up to 100 °C, and its photothermal performance greatly exceeds that of the existing transition metal nitride coating;
(4)本发明得到的氮化钛涂层具有顶端尖锐的纳米棒结构,具有物理杀菌的作用。(4) The titanium nitride coating obtained in the present invention has a nanorod structure with a sharp tip and has a physical sterilization effect.
附图说明Description of drawings
图1为靶材和基片的相对位置关系示意图。Figure 1 is a schematic diagram of the relative positional relationship between the target and the substrate.
图2为本发明实施例1和实施例2得到的氮化钛纳米涂层的XRD图。Fig. 2 is the XRD pattern of the titanium nitride nano-coatings obtained in Example 1 and Example 2 of the present invention.
图3为本发明实施例1和实施例2得到的氮化钛纳米涂层的SEM图。FIG. 3 is an SEM image of the titanium nitride nano-coating obtained in Example 1 and Example 2 of the present invention.
图4为本发明实施例1~4得到的氮化钛纳米涂层的光热性能测试曲线示意图。Fig. 4 is a schematic diagram of photothermal performance test curves of titanium nitride nano-coatings obtained in Examples 1-4 of the present invention.
图5为本发明实施例1和2得到的纳米涂层的机械性能测试结果图。a为涂层的硬度测试结果、b为涂层的结合性测试结果、c为涂层的耐磨性能测试结果、d为涂层的耐腐蚀性能测试结果。Fig. 5 is a graph showing the mechanical performance test results of the nano-coatings obtained in Examples 1 and 2 of the present invention. a is the hardness test result of the coating, b is the bonding test result of the coating, c is the wear resistance test result of the coating, and d is the corrosion resistance test result of the coating.
具体实施方式Detailed ways
下面结合附图和具体实施例对本发明做进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
一种高光热性能的纳米结构氮化钛涂层的制备方法,包括以下步骤:A method for preparing a nanostructured titanium nitride coating with high photothermal performance, comprising the following steps:
步骤1:以金属钛作为靶材,将基片与靶材相对设置;基片与靶面两个面之间的夹角为45°~80°;基片与靶面角度过小,等离子体束流的倾斜角度不够,无法形成纳米柱,距离太大,等离子体束流无法到达基片表面,进行涂层沉积。靶材面积大于基片面积1.5倍,该设置可以保证整个基片前等离子体束流倾斜角度的均匀性。基片中心与靶面中心距离为80mm~120 mm。距离过小,等离子体束流在基片表面不均匀,距离太大,束流发生绕射,无法进行斜入射沉积。Step 1: Using metal titanium as the target, set the substrate and the target oppositely; the angle between the two surfaces of the substrate and the target surface is 45° to 80°; if the angle between the substrate and the target surface is too small, the plasma The inclination angle of the beam is not enough to form nanopillars, and the distance is too large to allow the plasma beam to reach the surface of the substrate for coating deposition. The target area is 1.5 times larger than the substrate area, and this setting can ensure the uniformity of the inclination angle of the plasma beam in front of the entire substrate. The distance between the center of the substrate and the center of the target surface is 80 mm to 120 mm. If the distance is too small, the plasma beam will not be uniform on the substrate surface; if the distance is too large, the beam will be diffracted, making oblique incidence deposition impossible.
步骤2:通入氩气和氮气,采用高功率脉冲磁控溅射进行沉积,放电功率密度为1.0W/cm2~4.5 W/cm2,峰值功率密度为200 W/cm2~350 W/cm2,过低的溅射功率,Ti离化率低,无足量Ti离子注入基体,过高功率增大残余压应力,影响界面结合。沉积时间为30 s~60s;沉积过程中氩气纯度大于99.9%,流量为30 sccm~50 sccm,分压为0.3 Pa~0.5 Pa。氮气纯度大于99.9%,上述纯度可以确保形成1:1化学剂量比的TiN。流量为5 sccm~12 sccm,分压为0.05 Pa~0.12 Pa。沉积过程中基体基片偏压为-50 V~-150 V。基片施加偏压,有利于提高涂层硬度,偏压越高,硬度越高。偏压过小,涂层疏松,过大偏压增大残余压应力导致涂层剥落。Step 2: Infuse argon and nitrogen, and deposit by high-power pulse magnetron sputtering, with a discharge power density of 1.0 W/cm 2 to 4.5 W/cm 2 and a peak power density of 200 W/cm 2 to 350 W/ cm 2 , the sputtering power is too low, the Ti ionization rate is low, and there is no sufficient amount of Ti ions implanted into the substrate, and the high power increases the residual compressive stress, which affects the interface bonding. The deposition time is 30 s to 60 s; during the deposition process, the purity of argon gas is greater than 99.9%, the flow rate is 30 sccm to 50 sccm, and the partial pressure is 0.3 Pa to 0.5 Pa. The nitrogen purity is greater than 99.9%, which ensures the formation of 1:1 stoichiometric TiN. The flow rate is 5 sccm~12 sccm, and the partial pressure is 0.05 Pa~0.12 Pa. During the deposition process, the substrate bias voltage is -50 V ~ -150 V. Applying a bias voltage to the substrate is beneficial to increase the hardness of the coating. The higher the bias voltage, the higher the hardness. If the bias voltage is too small, the coating will be loose, and if the bias voltage is too large, the residual compressive stress will be increased and the coating will peel off.
沉积之前腔体抽真空至2×10-3 Pa以下。真空度不足,涂层会发生氧化,影响光热效果。The chamber is evacuated to below 2×10-3 Pa before deposition. If the vacuum degree is insufficient, the coating will be oxidized, which will affect the photothermal effect.
首先进行靶材溅射清洗和基片溅射清洗;First, target sputtering cleaning and substrate sputtering cleaning are carried out;
靶材清洗时氩气气压为0.3 Pa~0.5 Pa,靶材清洗时放电功率密度为2.0 W/cm2~3.0 W/cm2,靶材清洗时间为5~15 分钟;The argon gas pressure is 0.3 Pa to 0.5 Pa when the target is cleaned, the discharge power density is 2.0 W/cm 2 to 3.0 W/cm 2 when the target is cleaned, and the target cleaning time is 5 to 15 minutes;
基片清洗时氩气气压为2.0 Pa~4.0 Pa,基片的负基片偏压为-1000~-1500 V,基片清洗时间为10~30分钟。When the substrate is cleaned, the argon gas pressure is 2.0 Pa to 4.0 Pa, the negative substrate bias voltage of the substrate is -1000 to -1500 V, and the substrate cleaning time is 10 to 30 minutes.
步骤3:采用直流磁控溅射进行沉积,放电功率密度为3.5 W/cm2~5.0 W/cm2,沉积时间为15 min~25 min;过小的功率,不利于形成耐磨耐腐蚀的(111)面择优TiN涂层,过高的功率,增加残余压应力,影响涂层和基体的结合。沉积时间过短,不能形成纳米棒,过长时间纳米棒生长为连续的薄膜。溅射结束冷却后即可得到所需氮化钛涂层。沉积过程中氩气纯度大于99.9%,流量为30 sccm~50 sccm,分压为0.3 Pa~0.5 Pa。氮气纯度大于99.9%,流量为5 sccm~12 sccm,分压为0.05 Pa~0.12 Pa。沉积过程中基体基片偏压为-50 V~-150 V。Step 3: Use DC magnetron sputtering for deposition, the discharge power density is 3.5 W/cm 2 to 5.0 W/cm 2 , and the deposition time is 15 min to 25 min; too small power is not conducive to the formation of wear-resistant and corrosion-resistant (111) Surface-preferential TiN coating, too high power, increases residual compressive stress, and affects the combination of coating and substrate. If the deposition time is too short, the nanorods cannot be formed, and if the deposition time is too long, the nanorods grow into a continuous thin film. After sputtering and cooling, the desired titanium nitride coating can be obtained. During the deposition process, the purity of argon gas is greater than 99.9%, the flow rate is 30 sccm-50 sccm, and the partial pressure is 0.3 Pa-0.5 Pa. The nitrogen purity is greater than 99.9%, the flow rate is 5 sccm~12 sccm, and the partial pressure is 0.05 Pa~0.12 Pa. During the deposition process, the substrate bias voltage is -50 V ~ -150 V.
一种纳米结构氮化钛涂层,基材表面的氮化钛涂层为纳米棒结构,纳米棒紧密堆积,顶部尖锐;氮化钛纳米棒直径为100 nm~200 nm,氮化钛纳米棒向一侧倾斜;氮化钛纳米棒与基材垂线之间的夹角为24°~30°。A nanostructured titanium nitride coating, the titanium nitride coating on the surface of the substrate has a nanorod structure, the nanorods are closely packed, and the top is sharp; the diameter of the titanium nitride nanorods is 100 nm to 200 nm, and the titanium nitride nanorods Tilting to one side; the included angle between the titanium nitride nanorod and the vertical line of the substrate is 24°-30°.
实施例1Example 1
按照以下方法制备高光热性能的纳米结构氮化钛涂层:Nanostructured titanium nitride coatings with high photothermal properties were prepared as follows:
步骤1:首先对基片进行处理,将304不锈钢圆片放至丙酮中,用超声清洗15分钟,随后在无水乙醇中超声清洗15分钟,最后取出用氮气吹干待用;Step 1: First process the substrate, put the 304 stainless steel disc into acetone, clean it ultrasonically for 15 minutes, then ultrasonically clean it in absolute ethanol for 15 minutes, and finally take it out and dry it with nitrogen for use;
将纯度为99.9%,尺寸为170 mm×130 mm×5 mm的矩形金属Ti靶材安装至真空室内。将处理后的基片固定在夹具上,保持基片中心正对靶面中心,调整基片靶面距离为100mm,调整基片与靶面的夹角为45°,安装如图1所示。A rectangular metal Ti target with a purity of 99.9% and a size of 170 mm × 130 mm × 5 mm was installed in the vacuum chamber. Fix the processed substrate on the jig, keep the center of the substrate facing the center of the target surface, adjust the distance between the substrate and the target surface to 100 mm, and adjust the angle between the substrate and the target surface to 45°. The installation is shown in Figure 1.
步骤2:首先对靶材、基片进行溅射清洗Step 2: Sputter cleaning of the target and substrate first
本征真空预抽至2.00×10-3 Pa,向腔体通入纯度大于或等于99.9%的Ar气,Ar气流量为40 sccm,气压调整到0.4 Pa。用225 V、3 A的直流电源清洗靶材10 分钟,气压调整到3.0 Pa;基片施加-1500 V负基片偏压;此时在基片附近产生Ar等离子,Ar+在负基片偏压下持续轰击基体20分钟。The intrinsic vacuum is pre-evacuated to 2.00×10 -3 Pa, and Ar gas with a purity greater than or equal to 99.9% is introduced into the cavity, the Ar gas flow rate is 40 sccm, and the air pressure is adjusted to 0.4 Pa. Clean the target with a DC power supply of 225 V and 3 A for 10 minutes, adjust the air pressure to 3.0 Pa; apply a negative substrate bias of -1500 V to the substrate; at this time, Ar plasma is generated near the substrate, and Ar + is in the negative substrate bias. Bombardment of the substrate was continued for 20 minutes under pressure.
保持Ar气流量不变,流量为40 sccm,分压调整到0.4 Pa;通入N2气,流量为10sccm,分压调整到0.1 Pa。为基片施加-50 V直流基片偏压。为靶材接通-800 V、150 μm、200Hz的高功率脉冲磁控溅射电源,保持Ti靶材放电的平均功率密度为3.0 W/cm2,峰值功率密度约为275 W/cm2,沉积TiN涂层30 s。Keep the Ar gas flow constant, the flow rate is 40 sccm, and the partial pressure is adjusted to 0.4 Pa; N 2 gas is introduced, the flow rate is 10 sccm, and the partial pressure is adjusted to 0.1 Pa. Apply a -50 V DC substrate bias to the substrate. Turn on the high-power pulsed magnetron sputtering power supply of -800 V, 150 μm, 200 Hz for the target, keep the average power density of Ti target discharge at 3.0 W/cm 2 , and the peak power density is about 275 W/cm 2 , Deposit the TiN coating for 30 s.
步骤3:保持步骤2中的Ar气和N2气流量不变,为靶材接通-350 V、3A的直流磁控溅射电源,保持Ti靶材放电的平均功率密度为4.7 W/cm2,沉积TiN涂层15 min。Step 3: Keep the flow of Ar gas and N gas in step 2 constant, connect the target with a -350 V, 3A DC magnetron sputtering power supply, and keep the average power density of Ti target discharge at 4.7 W/cm 2 , deposit TiN coating for 15 min.
涂层沉积结束后,真空环境下冷却至30 ℃以下,然后放气至大气压,开腔出炉,在基片表面获得纳米棒结构TiN涂层。After the coating is deposited, it is cooled to below 30 °C in a vacuum environment, then released to atmospheric pressure, and the cavity is opened to obtain a nanorod structure TiN coating on the surface of the substrate.
实施例2Example 2
按照以下方法制备高光热性能的纳米结构氮化钛涂层:Nanostructured titanium nitride coatings with high photothermal properties were prepared as follows:
步骤1:首先对基片进行处理,将304不锈钢圆片放至丙酮中,用超声清洗15分钟,随后在无水乙醇中超声清洗15分钟,最后取出用氮气吹干待用;Step 1: First process the substrate, put the 304 stainless steel disc into acetone, clean it ultrasonically for 15 minutes, then ultrasonically clean it in absolute ethanol for 15 minutes, and finally take it out and dry it with nitrogen for use;
将纯度为99.9%,尺寸为170 mm×130 mm×5 mm的矩形金属Ti靶材安装至真空室内。将处理后的基片固定在夹具上,保持基片中心正对靶面中心,调整基片靶面距离为100mm,调整基片与靶面的夹角为80°,安装如图1所示。A rectangular metal Ti target with a purity of 99.9% and a size of 170 mm × 130 mm × 5 mm was installed in the vacuum chamber. Fix the processed substrate on the jig, keep the center of the substrate facing the center of the target surface, adjust the distance between the substrate and the target surface to 100 mm, and adjust the angle between the substrate and the target surface to 80°. The installation is shown in Figure 1.
步骤2:首先对靶材、基片进行溅射清洗Step 2: Sputter cleaning of the target and substrate first
本征真空预抽至2.00×10-3 Pa,向腔体通入纯度大于或等于99.9%的Ar气,Ar气流量为40 sccm,气压调整到0.4 Pa。用225 V、3 A的直流电源清洗靶材10 分钟,气压调整到3.0 Pa;基片施加-1500 V负基片偏压;此时在基片附近产生Ar等离子,Ar+在负基片偏压下持续轰击基体20分钟。The intrinsic vacuum is pre-evacuated to 2.00×10 -3 Pa, and Ar gas with a purity greater than or equal to 99.9% is introduced into the cavity, the Ar gas flow rate is 40 sccm, and the air pressure is adjusted to 0.4 Pa. Clean the target with a DC power supply of 225 V and 3 A for 10 minutes, adjust the air pressure to 3.0 Pa; apply a negative substrate bias of -1500 V to the substrate; at this time, Ar plasma is generated near the substrate, and Ar + is in the negative substrate bias. Bombardment of the substrate was continued for 20 minutes under pressure.
保持Ar气流量不变,流量为40 sccm,分压调整到0.4 Pa;通入N2气,流量为10sccm,分压调整到0.1 Pa。为基片施加-50 V直流基片偏压。为靶材接通-800 V、150 μm、200Hz的高功率脉冲磁控溅射电源,保持Ti靶材放电的平均功率密度为3.0 W/cm2,峰值功率密度约为275 W/cm2,沉积TiN涂层30 s。Keep the Ar gas flow constant, the flow rate is 40 sccm, and the partial pressure is adjusted to 0.4 Pa; N 2 gas is introduced, the flow rate is 10 sccm, and the partial pressure is adjusted to 0.1 Pa. Apply a -50 V DC substrate bias to the substrate. Turn on the high-power pulsed magnetron sputtering power supply of -800 V, 150 μm, 200 Hz for the target, keep the average power density of Ti target discharge at 3.0 W/cm 2 , and the peak power density is about 275 W/cm 2 , Deposit the TiN coating for 30 s.
步骤3:保持步骤2中的Ar气和N2气流量不变,为靶材接通-350 V、3A的直流磁控溅射电源,保持Ti靶材放电的平均功率密度为4.7 W/cm2,沉积TiN涂层15 min。Step 3: Keep the flow of Ar gas and N gas in step 2 constant, connect the target with a -350 V, 3A DC magnetron sputtering power supply, and keep the average power density of Ti target discharge at 4.7 W/cm 2 , deposit TiN coating for 15 min.
涂层沉积结束后,真空环境下冷却至30 ℃以下,然后放气至大气压,开腔出炉,在基片表面获得纳米棒结构TiN涂层。After the coating is deposited, it is cooled to below 30 °C in a vacuum environment, then released to atmospheric pressure, and the cavity is opened to obtain a nanorod structure TiN coating on the surface of the substrate.
实施例3Example 3
按照以下方法制备高光热性能的纳米结构氮化钛涂层:Nanostructured titanium nitride coatings with high photothermal properties were prepared as follows:
步骤1:首先对基片进行处理,将304不锈钢圆片放至丙酮中,用超声清洗15分钟,随后在无水乙醇中超声清洗15分钟,最后取出用氮气吹干待用;Step 1: First process the substrate, put the 304 stainless steel disc into acetone, clean it ultrasonically for 15 minutes, then ultrasonically clean it in absolute ethanol for 15 minutes, and finally take it out and dry it with nitrogen for use;
将纯度为99.9%,尺寸为170 mm×130 mm×5 mm的矩形金属Ti靶材安装至真空室内。将处理后的基片固定在夹具上,保持基片中心正对靶面中心,调整基片靶面距离为100mm,调整基片与靶面的夹角为80°,安装如图1所示。A rectangular metal Ti target with a purity of 99.9% and a size of 170 mm × 130 mm × 5 mm was installed in the vacuum chamber. Fix the processed substrate on the jig, keep the center of the substrate facing the center of the target surface, adjust the distance between the substrate and the target surface to 100 mm, and adjust the angle between the substrate and the target surface to 80°. The installation is shown in Figure 1.
步骤2:首先对靶材、基片进行溅射清洗Step 2: Sputter cleaning of the target and substrate first
本征真空预抽至2.00×10-3 Pa,向腔体通入纯度大于或等于99.9%的Ar气,Ar气流量为40 sccm,气压调整到0.4 Pa。用225 V、3 A的直流电源清洗靶材10 分钟,气压调整到3.0 Pa;基片施加-1500 V负基片偏压;此时在基片附近产生Ar等离子,Ar+在负基片偏压下持续轰击基体20分钟。The intrinsic vacuum is pre-evacuated to 2.00×10 -3 Pa, and Ar gas with a purity greater than or equal to 99.9% is introduced into the cavity, the Ar gas flow rate is 40 sccm, and the air pressure is adjusted to 0.4 Pa. Clean the target with a DC power supply of 225 V and 3 A for 10 minutes, adjust the air pressure to 3.0 Pa; apply a negative substrate bias of -1500 V to the substrate; at this time, Ar plasma is generated near the substrate, and Ar + is in the negative substrate bias. Bombardment of the substrate was continued for 20 minutes under pressure.
保持Ar气流量不变,流量为40 sccm,分压调整到0.4 Pa;通入N2气,流量为10sccm,分压调整到0.1 Pa。为基片施加-50 V直流基片偏压。为靶材接通-800 V、150 μm、200Hz的高功率脉冲磁控溅射电源,保持Ti靶材放电的平均功率密度为3.0 W/cm2,峰值功率密度约为275 W/cm2,沉积TiN涂层30 s。Keep the Ar gas flow constant, the flow rate is 40 sccm, and the partial pressure is adjusted to 0.4 Pa; N 2 gas is introduced, the flow rate is 10 sccm, and the partial pressure is adjusted to 0.1 Pa. Apply a -50 V DC substrate bias to the substrate. Turn on the high-power pulsed magnetron sputtering power supply of -800 V, 150 μm, 200 Hz for the target, keep the average power density of Ti target discharge at 3.0 W/cm 2 , and the peak power density is about 275 W/cm 2 , Deposit the TiN coating for 30 s.
步骤3:保持步骤2中的Ar气和N2气流量不变,为靶材接通-350 V、3A的直流磁控溅射电源,保持Ti靶材放电的平均功率密度为4.7 W/cm2,沉积TiN涂层25 min。Step 3: Keep the flow of Ar gas and N gas in step 2 constant, connect the target with a -350 V, 3A DC magnetron sputtering power supply, and keep the average power density of Ti target discharge at 4.7 W/cm 2 , deposit TiN coating for 25 min.
涂层沉积结束后,真空环境下冷却至30 ℃以下,然后放气至大气压,开腔出炉,在基片表面获得纳米棒结构TiN涂层。After the coating is deposited, it is cooled to below 30 °C in a vacuum environment, then released to atmospheric pressure, and the cavity is opened to obtain a nanorod structure TiN coating on the surface of the substrate.
实施例4Example 4
按照以下方法制备高光热性能的纳米结构氮化钛涂层:Nanostructured titanium nitride coatings with high photothermal properties were prepared as follows:
步骤1:首先对基片进行处理,将石英基片放至丙酮中,用超声清洗15分钟,随后在无水乙醇中超声清洗15分钟,最后取出用氮气吹干待用;Step 1: First process the substrate, put the quartz substrate in acetone, clean it ultrasonically for 15 minutes, then ultrasonically clean it in absolute ethanol for 15 minutes, and finally take it out and dry it with nitrogen gas for use;
将纯度为99.9%,尺寸为10 mm×10 mm×1 mm的矩形金属Ti靶材安装至真空室内。将处理后的基片固定在夹具上,保持基片中心正对靶面中心,调整基片靶面距离为100 mm,调整基片与靶面的夹角为80°,安装如图1所示。A rectangular metal Ti target with a purity of 99.9% and a size of 10 mm × 10 mm × 1 mm was installed in the vacuum chamber. Fix the processed substrate on the fixture, keep the center of the substrate facing the center of the target surface, adjust the distance between the substrate and the target surface to 100 mm, and adjust the angle between the substrate and the target surface to 80°. The installation is shown in Figure 1 .
步骤2:首先对靶材、基片进行溅射清洗Step 2: Sputter cleaning of the target and substrate first
本征真空预抽至2.00×10-3 Pa,向腔体通入纯度大于或等于99.9%的Ar气,Ar气流量为40 sccm,气压调整到0.4 Pa。用225 V、3 A的直流电源清洗靶材10 分钟,气压调整到3.0 Pa;基片施加-1500 V负基片偏压;此时在基片附近产生Ar等离子,Ar+在负基片偏压下持续轰击基体20分钟。The intrinsic vacuum is pre-evacuated to 2.00×10 -3 Pa, and Ar gas with a purity greater than or equal to 99.9% is introduced into the cavity, the Ar gas flow rate is 40 sccm, and the air pressure is adjusted to 0.4 Pa. Clean the target with a DC power supply of 225 V and 3 A for 10 minutes, adjust the air pressure to 3.0 Pa; apply a negative substrate bias of -1500 V to the substrate; at this time, Ar plasma is generated near the substrate, and Ar + is in the negative substrate bias. Bombardment of the substrate was continued for 20 minutes under pressure.
保持Ar气流量不变,流量为40 sccm,分压调整到0.4 Pa;通入N2气,流量为10sccm,分压调整到0.1 Pa。为基片施加-50 V直流基片偏压。为靶材接通-800 V、150 μm、200Hz的高功率脉冲磁控溅射电源,保持Ti靶材放电的平均功率密度为3.0 W/cm2,峰值功率密度约为275 W/cm2,沉积TiN涂层30 s。Keep the Ar gas flow constant, the flow rate is 40 sccm, and the partial pressure is adjusted to 0.4 Pa; N 2 gas is introduced, the flow rate is 10 sccm, and the partial pressure is adjusted to 0.1 Pa. Apply a -50 V DC substrate bias to the substrate. Turn on the high-power pulsed magnetron sputtering power supply of -800 V, 150 μm, 200 Hz for the target, keep the average power density of Ti target discharge at 3.0 W/cm 2 , and the peak power density is about 275 W/cm 2 , Deposit the TiN coating for 30 s.
步骤3:保持步骤2中的Ar气和N2气流量不变,为靶材接通-350 V、3A的直流磁控溅射电源,保持Ti靶材放电的平均功率密度为4.7 W/cm2,沉积TiN涂层15 min。Step 3: Keep the flow of Ar gas and N gas in step 2 constant, connect the target with a -350 V, 3A DC magnetron sputtering power supply, and keep the average power density of Ti target discharge at 4.7 W/cm 2 , deposit TiN coating for 15 min.
涂层沉积结束后,真空环境下冷却至30 ℃以下,然后放气至大气压,开腔出炉,在基片表面获得纳米棒结构TiN涂层。After the coating is deposited, it is cooled to below 30 °C in a vacuum environment, then released to atmospheric pressure, and the cavity is opened to obtain a nanorod structure TiN coating on the surface of the substrate.
图2为本发明实施例1和实施例2得到的氮化钛纳米涂层的XRD图。采用X射线衍射仪对涂层进行晶体结构分析,该X射线衍射仪的阳极靶为Cu靶(λ=1.54060 Å),其中X射线管电压为40 kV,电流为30 mA;采用常规θ~2θ模式对样品进行扫描,2θ角度范围为5°~80°。从图中可以看出得到的为TiN涂层,出现晶体学(111)面择优,这种结构可以增加涂层的硬度,该特性还能增强涂层的耐磨耐腐蚀性能。Fig. 2 is the XRD pattern of the titanium nitride nano-coatings obtained in Example 1 and Example 2 of the present invention. The crystal structure of the coating was analyzed by X-ray diffractometer. The anode target of the X-ray diffractometer was a Cu target (λ=1.54060 Å), where the X-ray tube voltage was 40 kV and the current was 30 mA; mode to scan the sample, the 2θ angle ranges from 5° to 80°. It can be seen from the figure that the TiN coating is obtained, and the crystallographic (111) surface is preferred. This structure can increase the hardness of the coating, and this feature can also enhance the wear resistance and corrosion resistance of the coating.
图3为本发明实施例1和实施例2得到的氮化钛纳米涂层的SEM图(SEM,JSM-700F,JEOL)对涂层的截面形貌进行观察,电子加速电压为5 kV;从图中可以看出基片和靶材的角度从45°增加至80°,涂层中的TiN纳米棒直径变小,角度为80°时TiN纳米棒直径为100 nm左右,倾斜角度随入射角的增大从约24°增加到30°左右。夹角越大,纳米棒顶端更加尖锐,这都有利于光热性能的提升。Figure 3 is the SEM image (SEM, JSM-700F, JEOL) of the titanium nitride nano-coating obtained in Example 1 and Example 2 of the present invention. The cross-sectional morphology of the coating is observed, and the electron accelerating voltage is 5 kV; It can be seen from the figure that the angle between the substrate and the target increases from 45° to 80°, and the diameter of the TiN nanorods in the coating becomes smaller. When the angle is 80°, the diameter of the TiN nanorods is about 100 nm. The enlargement of Δ increases from about 24° to about 30°. The larger the included angle, the sharper the tip of the nanorod, which is conducive to the improvement of photothermal performance.
图4为本发明实施例1~4得到的氮化钛纳米涂层的光热性能测试曲线示意图。采用功率密度为1.0 W/cm2 808 nm激光持续照射TiN涂层5 min,整个测试过程中用红外热成像仪对涂层表面温度进行在线测量并每隔30 s实时记录涂层表面温度。经1.0 W/cm2 808nm激光照射5 min后,涂层表面温度可达57 ℃。Fig. 4 is a schematic diagram of photothermal performance test curves of titanium nitride nano-coatings obtained in Examples 1-4 of the present invention. The TiN coating was continuously irradiated with a 808 nm laser with a power density of 1.0 W/cm 2 for 5 min. During the entire test process, the coating surface temperature was measured online with an infrared thermal imager and recorded in real time every 30 s. After irradiating with 1.0 W/cm 2 808nm laser for 5 min, the surface temperature of the coating can reach 57 ℃.
从图中可以看出不锈钢表面45°入射角沉积15 min制备的TiN涂层,激光照射5min后,温度达到57 ℃左右。80°入射角沉积15 min制备的TiN涂层,激光照射5 min后,温度达到66 ℃左右。80°入射角沉积25 min制备的TiN涂层,激光照射5 min后,温度超过89 ℃。石英表面45°入射角沉积15 min制备的TiN涂层,激光照射5 min后,温度超过102 ℃。It can be seen from the figure that the TiN coating deposited on the stainless steel surface at an incident angle of 45° for 15 minutes, after 5 minutes of laser irradiation, the temperature reaches about 57 °C. The TiN coating was deposited for 15 minutes at an incident angle of 80°, and the temperature reached about 66 °C after 5 minutes of laser irradiation. The TiN coating was deposited for 25 minutes at an incident angle of 80°, and the temperature exceeded 89 ℃ after 5 minutes of laser irradiation. The TiN coating was deposited on the quartz surface at an incident angle of 45° for 15 minutes. After 5 minutes of laser irradiation, the temperature exceeded 102 ℃.
图5为实施例1和实施例2得到的氮化钛纳米涂层的硬度、结合、耐磨、耐腐蚀性能测 试结果。采用纳米压痕仪(Nano Indenter G200,Agilent)测试涂层的纳米压入硬度,设定载 荷为1mN,加载速率为0.2mN/min,如图5所示。实施例1得到的涂层硬度达20GPa以上。Fig. 5 is the hardness of the titanium nitride nano-coating that embodiment 1 and embodiment 2 obtain, bonding, wear resistance, corrosion resistance test result. The nano-indentation hardness of the coating was tested using a nano-indenter (Nano Indenter G200, Agilent), with a set load of 1 mN and a loading rate of 0.2 mN/min, as shown in Figure 5. The hardness of the coating obtained in Example 1 reaches above 20 GPa.
实施例2得到的涂层硬度达15GPa以上。The hardness of the coating obtained in Example 2 reaches above 15 GPa.
采用多功能材料表面性能测量仪(MTF-400)对涂层进行划痕测试,压头为Si3N4球头, 直径6mm的,划痕长度5mm,最大载荷100N,加载速率为100N/min,压头的移动速率是5mm/min。从图5中可以看出实施例1和实施例2得到的涂层均结合牢固。The coating is scratch tested by a multi-functional material surface performance measuring instrument (MTF-400). The indenter is a Si 3 N 4 ball head with a diameter of 6 mm, a scratch length of 5 mm, a maximum load of 100 N, and a loading rate of 100 N/min. , the moving speed of the indenter is 5mm/min. It can be seen from Figure 5 that the coatings obtained in Example 1 and Example 2 are all firmly bonded.
采用瑞士的CSEM型摩擦磨损试验机对涂层的耐磨性进行评价,方式为球盘式。球盘式 测试中,“球”采用Φ6mm的Si3N4球体,施加的法向载荷为0.5N,样品是绕中心轴旋转,旋转半径为6mm。从图5中可以看出实施例1和实施例2得到的涂层摩擦系数在0.4以下。The Swiss CSEM friction and wear testing machine is used to evaluate the wear resistance of the coating, and the method is a ball-on-disk type. In the ball-on-disk test, the "ball" is a Φ6mm Si 3 N 4 sphere, the applied normal load is 0.5N, the sample is rotated around the central axis, and the rotation radius is 6mm. It can be seen from Figure 5 that the coefficient of friction of the coating obtained in Example 1 and Example 2 is below 0.4.
采用IM6型电化学工作站测量TiN薄膜的耐腐蚀性能,腐蚀液为浓度0.9%的NaCl溶液, 待测面积为1.77cm2,电位扫描范围为-500~750mV,扫描速率为2mV/s。其结果如图5所 示,从图中可以看出实施例1和实施例2得到的涂层耐盐溶液腐蚀。The corrosion resistance of the TiN thin film was measured by an IM6 electrochemical workstation. The corrosion solution was NaCl solution with a concentration of 0.9%. The area to be tested was 1.77cm 2 . The results are shown in Figure 5, from which it can be seen that the coatings obtained in Example 1 and Example 2 are resistant to salt solution corrosion.
本发结合高功率脉冲磁控溅射和直流磁控溅射,得到一种与基材结合力高、具有纳米棒结构,纳米棒排列结构紧密,顶端具有尖锐结构的氮化钛涂层。高功率脉冲磁控溅射在基片上得到结合层,高功率脉冲磁控溅射产生的高能等离子体束能注入到基材的亚表面层,提高涂层与基材的结合力,并且得到的结合层结构相对致密,能够避免基片-涂层界面的腐蚀。由于采用高功率脉冲磁控溅射在基片上得到的结合层的特殊性能,使得进一步通过对基片施加直流基片偏压,增强离子对基片的轰击作用,进一步提高涂层中纳米棒的紧密排列程度。最终得到结构致密、硬度高、耐磨、耐腐蚀的过渡族金属氮化物光热涂层,可增加涂层的服役可靠性和延长涂层的服役寿命。The present invention combines high-power pulse magnetron sputtering and DC magnetron sputtering to obtain a titanium nitride coating with a high bonding force with a base material, a nanorod structure, a tight arrangement of the nanorods, and a sharp structure at the top. High-power pulse magnetron sputtering is used to obtain a bonding layer on the substrate. The high-energy plasma beam generated by high-power pulse magnetron sputtering can be injected into the subsurface layer of the substrate to improve the bonding force between the coating and the substrate, and the obtained The bonding layer structure is relatively dense, which can avoid corrosion of the substrate-coating interface. Due to the special properties of the bonding layer obtained by high-power pulsed magnetron sputtering on the substrate, further applying a DC substrate bias to the substrate enhances the bombardment of ions on the substrate and further improves the density of nanorods in the coating. degree of closeness. Finally, a transition metal nitride photothermal coating with compact structure, high hardness, wear resistance and corrosion resistance can be obtained, which can increase the service reliability of the coating and prolong the service life of the coating.
本发明得到的氮化钛涂层为纳米棒结构,纳米棒紧密堆积,顶部尖锐;氮化钛纳米棒直径为100 nm~200 nm,氮化钛纳米棒向一侧倾斜;氮化钛纳米棒与基材垂线之间的夹角为24°~30°。通过对等离子体数量入射角度的调整,沉积时间的调整,可以实现对纳米棒尺寸的进一步调控,达到氮化钛涂层光热性能的连续调控的目的。本发明得到的涂层经1.0W/cm2 808 nm激光照射后,涂层表面温度最高可达100 ℃(实施例4为102 ℃),其光热性能大幅超过现有过渡族金属氮化物涂层。涂层与基体结合牢固,硬度高,耐磨耐腐蚀,在海水淡化、热光伏器件中可长期稳定服役。人工关节、人工颌面在植入后,面临巨大感染风险,对沉积有纳米棒结构氮化钛(TiN)涂层的植入器械使用近红外激光进行定期照射,可无创杀死致局部感染的细菌群落。The titanium nitride coating obtained in the present invention has a nanorod structure, the nanorods are closely packed, and the top is sharp; the diameter of the titanium nitride nanorods is 100 nm to 200 nm, and the titanium nitride nanorods are inclined to one side; the titanium nitride nanorods are The angle between the perpendicular to the substrate is 24° to 30°. By adjusting the incident angle of the plasma quantity and the adjustment of the deposition time, further regulation of the size of the nanorods can be realized, and the purpose of continuous regulation of the photothermal properties of the titanium nitride coating can be achieved. After the coating obtained in the present invention is irradiated with a 1.0W/cm 2 808 nm laser, the surface temperature of the coating can reach up to 100 °C (102 °C in Example 4), and its photothermal performance greatly exceeds that of the existing transition metal nitride coating. Floor. The coating is firmly bonded to the substrate, has high hardness, wear resistance and corrosion resistance, and can serve stably for a long time in seawater desalination and thermal photovoltaic devices. After artificial joints and artificial maxillofacial implants are implanted, they face a huge risk of infection. Regular irradiation of near-infrared lasers on implanted devices deposited with a nanorod structure titanium nitride (TiN) coating can non-invasively kill those that cause local infection. bacterial community.
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