CN115256665A - Cutting method and cutting equipment for large-size silicon wafer - Google Patents

Abstract

The invention relates to the technical field of semiconductors, and provides a large-size silicon wafer cutting method and a large-size silicon wafer cutting device. The method comprises: controlling the silicon rod to be cut to move to the cutting zero point position of the cutting wire net; controlling the silicon rod to move to the cutting wire net, and controlling the cutting wire to periodically reciprocate along the circumferential direction of the guide roller assembly to cut the silicon rod, A plurality of large-sized silicon wafers are obtained; wherein, the depth of the cutting line cutting into the silicon rod during the wire feeding process of the first cutting cycle is the target depth, and the cutting wire moves along the first circumferential direction of the guide roller assembly to correspond to the wire feeding process, The movement of the cutting line along the second rotational direction in the circumferential direction of the guide roller assembly corresponds to the thread return process, the first rotational direction and the second rotational direction are opposite, and each cutting cycle includes a thread feed process and a thread return process. The method controls the depth of the cutting line cutting into the silicon rod to reach the target depth during the wire feeding process of the first cutting cycle, so as to prevent the impact of the cutting line jitter on the thickness of the large-size silicon wafer and the uniformity of TTV.

Description

Cutting method of large-size silicon wafer and cutting equipment of large-size silicon wafer

technical field

The invention relates to the technical field of semiconductors, in particular to a large-size silicon chip cutting method and large-size silicon chip cutting equipment.

Background technique

With the rapid development of the semiconductor industry, the demand for silicon wafers continues to rise. Cutting silicon rods to obtain qualified silicon wafers is an important part of the production and processing of silicon wafers.

With the upgrading of semiconductor technology and the constant pursuit of cost optimization, small-sized silicon wafers of 166mm and below are rapidly being replaced by large-sized silicon wafers of 182mm and above, and the market share of large-sized silicon wafers with specifications such as 182mm and 210mm is increasing year by year increment.

Most of the existing silicon wafer cutting uses two guide rollers to drive the cutting line to cut silicon rods. Large-sized silicon wafers match the cutting mode of large axis spacing. With the increase of the axis spacing, the cutting line is radially stressed by the guide rollers. Small or no force, the cutting wire is subjected to uneven load and large jumps during the process of cutting silicon rods at high speed, resulting in large thickness errors of large-sized silicon wafers and affecting the quality of finished products of large-sized silicon wafers.

Contents of the invention

The invention provides a large-size silicon chip cutting method and large-size silicon chip cutting equipment, which are used to solve the problem in the prior art that the cutting line jumps, resulting in a large thickness error of the large-size silicon chip.

The invention provides a method for cutting large-size silicon wafers, comprising:

Control the silicon rod to be cut to move to the cutting zero point position of the cutting wire net, the cutting wire net includes a plurality of cutting line segments formed by winding the cutting line around the guide roller assembly along the circumferential direction of the guide roller assembly, the plurality of The cutting line segments are arranged axially along the guide roller assembly, the guide roller assembly includes three guide rollers arranged in a triangle, and the axial directions of the three guide rollers are parallel;

controlling the silicon rods to move toward the cutting wire network, and controlling the cutting wires to perform periodic reciprocating motion along the circumference of the guide roller assembly to cut the silicon rods to obtain a plurality of large-sized silicon wafers;

Wherein, the depth at which the cutting line cuts into the silicon rod in the line-entry process of the first cutting cycle is the target depth, and the movement of the cutting line along the first rotational direction of the guide roller assembly corresponds to the depth of the line-entry. process, the movement of the cutting wire along the second rotation direction of the guide roller assembly corresponds to the return process, the first rotation direction is opposite to the second rotation direction, and each cutting cycle includes the wire entry process and the return process.

According to the present invention, a large-size silicon wafer cutting method is provided, and the target depth is 0.8mm-1.0mm.

According to a method for cutting large-sized silicon wafers provided by the present invention, the cutting zero point is a position at a target distance from the cutting wire net.

According to the present invention, a large-size silicon wafer cutting method is provided, and the target distance is 0.2mm-0.4mm.

According to the present invention, a method for cutting large-size silicon wafers is provided, wherein the control of the movement of the silicon rod to be cut to the cutting zero position of the cutting wire network includes:

controlling the silicon rod to move at a first speed to a position at a first distance from the cutting wire net, the first distance being greater than the target distance;

Controlling the silicon rod to move to the cutting zero position at a second speed, the first speed being greater than the second speed.

According to a method for cutting large-sized silicon wafers provided by the present invention, the first distance is 10mm-20mm.

The present invention also provides a cutting device for large-size silicon wafers, including:

A guide roller assembly, the guide roller assembly includes three guide rollers arranged in a triangle, and the axial directions of the three guide rollers are parallel;

A cutting line, the cutting line is wound around the guide roller assembly along the circumference of the guide roller assembly to form a plurality of cutting line segments, and the plurality of cutting line segments are arranged along the axial direction of the guide roller assembly to form a cutting line network ;

Workbench, described workbench is used for placing the silicon block to be cut;

A driving mechanism, the driving mechanism is connected with the guide roller assembly and the cutting line, and the driving mechanism is used to drive the cutting line to make periodic reciprocating motion along the circumferential direction of the guide roller assembly;

a controller, the controller is connected to the workbench and the drive mechanism, and the controller is used to control the workbench and the drive mechanism to cut the silicon rod based on the above-mentioned cutting method of large-size silicon wafers, Get large size silicon wafers.

According to the present invention, there is provided a cutting device for large-sized silicon wafers, wire grooves are arranged along the circumference of the guide roller, a plurality of wire grooves are arranged along the circumference of the guide roller, and the wire grooves are used to accommodate the The plurality of wire grooves of the guide roller correspond to the plurality of cutting line segments one by one.

According to the present invention, a large-size silicon wafer cutting device is provided, the distance between two adjacent wire slots is 0.20mm-0.22mm, and the diameter of the cutting line is 0.035mm-0.040mm.

According to the present invention, a large-size silicon wafer cutting device is provided, and the wire grooves of the two guide rollers corresponding to the cutting line segment are arranged in a staggered manner.

According to the present invention provides a large-size silicon wafer cutting equipment, the staggered distance between the two staggered wire slots is 0.5 mm-1 mm, and the staggered wire slots on the same guide roller are The number is 2-5.

The present invention also provides a large-size silicon wafer, which is obtained by cutting the large-size silicon wafer using the above-mentioned cutting method for a large-size silicon wafer.

The present invention also provides a cutting device for large-size silicon wafers, including:

The first processing module is used to control the silicon rod to be cut to move to the cutting zero point position of the cutting wire net, and the cutting wire net includes a plurality of cutting lines formed by winding around the guide roller assembly along the circumferential direction of the guide roller assembly. Cutting line segments, the plurality of cutting line segments are arranged along the axial direction of the guide roller assembly, the guide roller assembly includes three guide rollers arranged in a triangle, and the axial directions of the three guide rollers are parallel;

The second processing module is used to control the movement of the silicon rods to the cutting wire network, and control the cutting wires to perform periodic reciprocating motion along the circumferential direction of the guide roller assembly to cut the silicon rods to obtain a plurality of Large size silicon wafer;

Wherein, the depth at which the cutting line cuts into the silicon rod in the line-entry process of the first cutting cycle is the target depth, and the movement of the cutting line along the first rotational direction of the guide roller assembly corresponds to the depth of the line-entry. process, the movement of the cutting wire along the second rotation direction of the guide roller assembly corresponds to the return process, the first rotation direction is opposite to the second rotation direction, and each cutting cycle includes the wire entry process and the return process.

The present invention also provides an electronic device, including a memory, a processor, and a computer program stored on the memory and operable on the processor. When the processor executes the program, the large-size silicon Steps of slice cutting method.

The present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of any one of the above-mentioned large-size silicon wafer cutting methods are realized.

The method for cutting large-sized silicon wafers and the cutting equipment for large-sized silicon wafers provided by the present invention can prevent the cutting line from shaking during the cutting process by controlling the cutting depth of the cutting line into the silicon rod during the first cutting cycle. It affects the thickness of large-size silicon wafers and the uniformity of TTV, and improves the quality of finished products and cutting yield of large-size silicon wafers.

Description of drawings

In order to more clearly illustrate the present invention or the technical solutions in the prior art, the accompanying drawings that need to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the accompanying drawings in the following description are the For some embodiments of the present invention, those of ordinary skill in the art can also obtain other drawings based on these drawings on the premise of not paying creative efforts.

Fig. 1 is the schematic flow sheet of the cutting method of large-size silicon chip provided by the present invention;

Fig. 2 is the three-dimensional structure schematic diagram of the cutting equipment of large-size silicon chip provided by the present invention;

Fig. 3 is the plan view of the cutting equipment of large-size silicon wafer provided by the present invention;

Fig. 4 is the side view of the cutting equipment of large-size silicon wafer provided by the present invention;

Fig. 5 is a schematic structural view of a cutting device for a large-size silicon wafer provided by the present invention;

Fig. 6 is a schematic structural diagram of an electronic device provided by the present invention.

Reference signs:

110: the first guide roller; 111: the first bearing box; 120: the second guide roller; 121: the second bearing box; 130: the third guide roller; 131: the third bearing box;

200: cutting line; 210: cutting line net;

310: the first wire storage wheel; 320: the second wire storage wheel;

400: square.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention , but not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

In the description of the embodiments of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top" ", "bottom", "inner", "outer" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, rather than indicating or implying The devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation and therefore should not be construed as limiting the embodiments of the invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and should not be construed as indicating or implying relative importance.

In the description of the embodiments of the present invention, it should be noted that unless otherwise specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection, Or integrated connection; it can be mechanical connection, electrical connection, wired communication connection, or wireless communication connection; it can be directly connected or indirectly connected through an intermediary. Those of ordinary skill in the art can understand the specific meanings of the above terms in the embodiments of the present invention in specific situations.

In the embodiments of the present invention, unless otherwise specified and limited, the first feature may be in direct contact with the first feature or the first feature and the second feature may pass through the middle of the second feature. Media indirect contact. Moreover, "above", "above" and "above" the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "beneath" and "beneath" the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.

In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the embodiments of the present invention. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

In addition, those skilled in the art can combine and combine different embodiments or examples and features of different embodiments or examples described in this specification without conflicting with each other.

The cutting process is an important process in the preparation of silicon wafers. The cutting principle is that the rotating cutting line carries abrasive particles. The hardness of the abrasive particles is greater than that of polysilicon. The edges and corners of the abrasive particles are used to continuously grind the silicon block to play a cutting role.

The thickness error of a silicon wafer is an important index to measure the quality of a silicon wafer. The parameters characterizing the thickness error include total thickness variation (Total Thickness Variation, TTV), TTV average value and thickness average value.

TTV is the deviation between the highest point and the lowest point of the silicon wafer thickness at 5 points on a silicon wafer. The average TTV is the sum of the TTVs of all silicon wafers cut once, and the average thickness is the average value of all silicon wafers cut once. The summed average of the thickness.

The embodiment of the present invention provides a method for cutting large-sized silicon wafers, which is used to solve the problem that during the cutting process of large-sized silicon wafers, the cutting line jumps greatly, resulting in large thickness errors of large-sized silicon wafers, which affects the quality of finished products of large-sized silicon wafers The problem.

The method for cutting a large-sized silicon wafer according to the embodiment of the present invention will be described below with reference to FIGS. 1 to 4 . The method may be executed by a device controller, or a cloud, or an edge server.

In the embodiment of the present invention, the large-size silicon wafer obtained by cutting the large-size silicon wafer can be applied to the manufacture of various semiconductor devices, such as various types of diodes, transistors, field effect transistors, photovoltaic cells, and the like.

As shown in FIG. 1 , the method for cutting a large-sized silicon wafer according to the embodiment of the present invention includes step 11 to step 12 .

Step 11 , controlling the silicon rod to be cut to move to the cutting zero position of the cutting wire network 210 .

Wherein, the cutting line network 210 includes a plurality of cutting line segments formed by the cutting line 200 wound around the guide roller assembly along the circumferential direction of the guide roller assembly. The plurality of cutting line segments are arranged along the axial direction of the guide roller assembly. There are three guide rollers for the cloth, and the axial directions of the three guide rollers are parallel.

As shown in Figure 2, the guide roller assembly includes a first guide roller 110, a second guide roller 120 and a third guide roller 130, the three guide rollers are arranged in a triangle, the first guide roller 110 and the second guide roller 120 can be located above the third guide roller 130 .

A plurality of cutting line segments are arranged along the axial direction of the guide roller assembly, forming a cutting line network 210 between the first guide roller 110 and the second guide roller 120 .

It can be understood that the three guide rollers of the guide roller assembly are arranged in a triangle, and the guide roller assembly is a cube with a triangular bottom as a whole, and the cutting line 200 is wound around the guide roller assembly along the circumference of the guide roller assembly. A cutting line network 210 can be formed on each of the rectangular surfaces to cut the silicon rod.

In this step, the silicon rod to be cut is controlled to move to the cutting zero point position of the cutting wire network 210, so as to realize the tool setting of the silicon rod cutting program.

In this embodiment, the cutting wire 200 can be a diamond cutting wire, and the diamond cutting wire uses tiny diamond particles as abrasive particles. The hardness of diamond is high, which can effectively improve the cutting ability of the cutting wire 200 and speed up the cutting speed.

Step 12. Control the silicon rods to move to the cutting wire network 210, and control the cutting wire 200 to perform periodic reciprocating motion along the circumferential direction of the guide roller assembly to cut the silicon rods to obtain multiple large-sized silicon wafers.

In this step, the silicon rod is controlled to move toward the cutting wire web 210 at a certain speed, and at the same time, the guide rollers of the guide roller assembly are controlled to alternately rotate in the first rotation direction and the second rotation direction, so as to drive the cutting line 200 along the direction of the guide roller assembly. Perform periodic reciprocating motion in the circumferential direction to cut silicon rods and obtain multiple large-size silicon wafers.

The movement of the cutting line 200 in the first rotational direction along the circumference of the guide roller assembly corresponds to the wire entry process, and the movement of the cutting line 200 in the second rotational direction along the circumference of the guide roller assembly corresponds to the return process, and the first rotational direction is opposite to the second rotational direction , each cutting cycle includes the wire-in process and the wire-return process.

The three guide rollers of the guide roller assembly rotate along the first rotational direction of the guide roller assembly, and drive the cutting wire 200 to move along the first rotational direction of the guide roller assembly, corresponding to the wire feeding process of the cutting wire 200 .

The three guide rollers of the guide roller assembly rotate along the second rotation direction of the guide roller assembly, driving the cutting wire 200 to move along the second rotation direction of the guide roller assembly, corresponding to the wire feeding process of the cutting wire 200 .

In this embodiment, each cutting cycle includes a wire-feeding process and a wire-returning process, and the cutting of the silicon rod is realized through the continuous alternation of the wire-feeding process and the wire-returning process.

For example, as shown in FIG. 2 , the first wire storage wheel 310 and the second wire storage wheel 320 are used to store the cutting wire 200 , the first rotation direction is counterclockwise, and the second rotation direction is clockwise.

As shown in FIG. 4 , the cutting line 200 starts from the third guide roller 130 , and is wound around the guide roller assembly along the second guide roller 120 and the first guide roller 110 in sequence, and is formed on the second guide roller 120 and the first guide roller 110 Cutting the wire web 210 , the distance D is the axial distance between the second guide roller 120 and the first guide roller 110 .

When the three guide rollers rotate counterclockwise along the circumference of the guide roller assembly, the cutting wire 200 is driven to move in the counterclockwise direction, and the cutting wire 200 stored in the first wire storage wheel 310 enters the second wire storage wheel 320 .

When the three guide rollers rotate clockwise along the circumference of the guide roller assembly, the cutting wire 200 is driven to move clockwise, and the cutting wire 200 stored by the second wire storage wheel 320 enters the first wire storage wheel 310 .

It can be understood that when cutting large-sized silicon wafers in the related art, as the interaxial distance increases, the wiring length of the cutting line 200 increases, the cutting stroke of the cutting line 200 increases, and the wear non-uniformity increases, which directly leads to the wear of the silicon wafer. Thickness and TTV uniformity deteriorated.

In this embodiment, the cutting wire 200 periodically reciprocates along the circumferential direction of the guide roller assembly to cut silicon rods, and the cutting wire 200 reciprocates and cuts the silicon rods through multiple cutting cycles of the incoming wire process and the returning wire process, which can reduce the The local excessive wear of the cutting line 200 improves the wear uniformity of the cutting line 200, thereby improving the thickness of the large-sized silicon wafer and the uniformity of TTV.

In this embodiment, the depth at which the cutting wire 200 cuts into the silicon rod during the wire feeding process of the first cutting cycle is the target depth, and the target depth is the depth at which the cutting wire 200 cuts the silicon rod completely into the knife.

It should be noted that, in this embodiment, the cutting cycle of the cutting wire 200 is to perform the wire feeding process first, and then switch to the wire returning process.

It can be understood that, when the wire-entry process and the wire-return process are switched, the direction in which the cutting wire 200 cuts into the silicon rod changes, causing changes and vibrations in the speed of the cutting wire 200. In this embodiment, the cutting wire 200 is in the first cutting In the periodic wire feeding process, the depth of cutting into the silicon rod is guaranteed to be at the target depth, which can prevent the jitter of the cutting wire 200 from affecting the thickness of large-sized silicon wafers and the uniformity of TTV when switching between the wire feeding process and the wire returning process.

It should be noted that, in this embodiment, the large-sized silicon wafer obtained by cutting the silicon rod may be an N-type silicon wafer, and the large-sized silicon wafer may be a silicon wafer with a specification of 182 mm.

According to the method for cutting large-sized silicon wafers provided in the embodiment of the present invention, the cutting depth of the cutting wire 200 in the wire-feeding process of the first cutting cycle is controlled to reach the target depth to prevent the cutting wire 200 from shaking during the cutting process. The thickness of the silicon wafer and the uniformity of TTV will affect the finished product quality and cutting yield of large-size silicon wafers.

In some embodiments, the target depth may be 0.8mm-1.0mm.

In this embodiment, the cutting depth of the cutting wire 200 into the silicon rod during the first cutting cycle is set to 0.8mm-1.0mm, which effectively prevents the cutting wire 200 from shaking and affects the thickness of the large-sized silicon wafer and the uniformity of TTV. make an impact.

It should be noted that the large-size silicon wafer can be a silicon wafer with a specification of 182 mm or a silicon wafer with a specification of 210 mm. The depth of the silicon rod cut into the wire process is between 4/1000 and 5/1000 of the size of the finished large-size silicon wafer, which reduces the TTV value of the large-size silicon wafer and improves the flatness of the cut large-size silicon wafer.

In some embodiments, the cutting zero position is a position at a target distance from the cutting wire web 210 .

Set the cutting zero point position as the target distance from the cutting wire net 210 , at the cutting zero point position, the distance between the silicon rod and the cutting wire net 210 is the target distance, and the silicon rod is not in contact with the cutting wire net 210 .

In this embodiment, the target distance may be 0.2mm-0.4mm.

In actual implementation, the target distance can be 0.3 mm. When the silicon rod is at the cutting zero position, the gap between the silicon rod and the cutting wire net 210 can be stuffed into a piece of A4 hard cardboard, and the silicon rod can be judged by A4 hard cardboard. Whether the bar is at the cutting zero position.

In the related art, the distance between the silicon rod and the cutting line 200 is usually about 2 mm or completely separated from the cutting line 200, so that the cutting line 200 cannot stably cut into the silicon rod, thereby affecting the thickness of the finished silicon wafer and the uniformity of TTV.

It should be noted that moving the silicon rod to the cutting zero position at a target distance from the cutting wire net 210 can ensure that the cutting wire net 210 cuts into the silicon rod smoothly, improving the thickness of large-sized silicon wafers and the uniformity of TTV.

In some embodiments, step 11 includes: controlling the silicon rod to move at a first speed to a position at a first distance from the cutting wire network 210, where the first distance is greater than the target distance;

The silicon rod is controlled to move to the cutting zero position at a second speed, and the first speed is greater than the second speed.

In this embodiment, the silicon rod first moves quickly to the position of the first distance from the cutting wire network 210, and then moves slowly, and finally the silicon rod is moved to the cutting zero point position, while ensuring the accuracy of the knife position, reducing The time required for tool setting.

In actual implementation, the first distance may be 10mm-20mm.

In actual implementation, first lower the workbench at the first speed, move the silicon rod on the workbench to a position 15 mm above the cutting wire net 210, change it to slow down, and move the silicon rod to the cutting zero position, the target distance It can be 0.3mm to ensure that the silicon rod and the cutting wire net 210 do not touch each other, and a piece of A4 hard cardboard can be inserted into the gap in the middle.

The arrangement of the cutting wire web 210 on the guide roller assembly in the embodiment of the present invention will be described below.

In some embodiments, wire grooves are provided along the circumferential direction of the guide roller, and a plurality of wire grooves are arranged along the circumference of the guide roller. The wire grooves are used to accommodate the cutting line segments, and the plurality of wire grooves of the guide roller correspond to the plurality of cutting line segments one by one. .

A wire groove is provided along the circumference of the guide roller, and the wire groove may be an annular groove around the guide roller. When the cutting wire 200 is arranged on the guide roller assembly, the cutting wire 200 is placed in the wire groove.

In this embodiment, when the guide rollers of the guide roller assembly rotate in different directions, the cutting wire 200 in the wire slot is driven to move in different directions, and the silicon rods are reciprocally cut through the wire feeding process and the wire returning process alternately to obtain multiple large size wafer.

In this embodiment, the distance between two adjacent slots is 0.20mm-0.22mm, and the diameter of the cutting wire 200 is 0.035mm-0.040mm.

In actual implementation, on the same guide roller, the distance between two adjacent wire slots may be 0.21 mm, and the wire diameter of the cutting line 200 may be 0.038 mm.

In this embodiment, the tension on the cutting line 200 of the guide roller assembly can be set to 3.0 Newton-4.4 Newton, the distance between two adjacent wire grooves is 0.20 mm-0.22 mm, and the wire diameter of the cutting line 200 is The cutting wire mesh 210 of 0.035 mm-0.040 mm is suitable for cutting large-sized silicon wafers with a thickness of 130 microns-150 microns.

In some embodiments, the slots of the two guide rollers corresponding to the cutting line segment are arranged in a staggered manner.

In this embodiment, a plurality of wire grooves are uniformly arranged on each guide roller of the guide roller assembly, the cutting line segment of the cutting wire network 210 is between the two guide rollers, and one end of the cutting line segment is in the wire groove of one guide roller. Inside, the other end of the cutting line is inside another guide roller.

The wire grooves of the two guide rollers corresponding to the cutting line segment are arranged in a staggered manner, that is, the wire grooves at both ends of the cutting line segment are arranged in a staggered manner, and the cutting line segment is not in vertical contact with the guide rollers.

In the related art, with the increase of the axial distance, the cutting wire 200 receives little or no force in the radial direction, and the cutting wire 200 is subjected to uneven load during high-speed cutting of silicon rods, resulting in large jumping in the radial direction, affecting Uniformity of wafer thickness and TTV.

In this embodiment, the grooves of the two guide rollers corresponding to the cutting line segment are arranged in a staggered manner. This wiring method compensates for the force on the cutting line 200 in the radial direction of the guide rollers, and provides the stability of the cutting line 200. The beating of the cutting line 200 improves the thickness of the large-size silicon wafer and the uniformity of TTV.

In some embodiments, the staggered distance between the two staggered wire slots is 0.5 mm-1 mm, and the number of staggered wire slots on the same guide roller is 2-5.

In this embodiment, the staggered distance between the two wire grooves can be calculated according to the distance between the wire grooves and the ends of the corresponding guide rollers.

In actual implementation, a bearing box is installed at the end of the guide roller, and by measuring the distance between the two wire slots and their respective bearing boxes, the difference between the two distances is calculated to be the staggered distance of the two wire slots.

For example, the guide roller assembly includes a first guide roller 110, a second guide roller 120 and a third guide roller 130, the end of the first guide roller 110 is equipped with a first bearing housing 111, and the end of the second guide roller 120 is installed with The second bearing box 121 and the end of the third guide roller 130 are installed with a third bearing box 131 .

As shown in Figure 3, the distance between the wire groove on the first guide roller 110 and the first bearing box 111 is measured by a square 400 as L1, and the distance between the wire groove on the second guide roller 120 and the second bearing box 121 is measured as L2, two The staggered distance of the trunking is L2 minus L1.

In this embodiment, the distance between the two wire grooves can be 0.5 mm-1 mm, and the number of wire grooves arranged staggeredly on the guide roller can be 2-5, so that at least 2 wire grooves wound on the guide roller One-five cutting line segments that are not perpendicular to the guide roller compensate the force on the cutting line 200 in the radial direction of the guide roller, provide the stability of the cutting line 200, control the beating of the cutting line 200, and improve the stability of large-sized silicon wafers Uniformity of thickness and TTV.

In the embodiment of the present invention, the cutting lines 200 arranged staggeredly on the three guide rollers are arranged in such a way that the force on the cutting lines 200 in the radial direction of the guide rollers is balanced, the jumping of the cutting lines 200 is reduced, and the distance between adjacent cutting line segments is set and The wire diameter of the cutting line 200 is set to realize thin slice cutting of large-size silicon wafers.

A specific embodiment is introduced below.

Step 1, bonding silicon rods.

In this step, the flatness standard of the crystal holder and the plastic plate to which the silicon rods are bonded is: crystal holder=0.2mm-0.3mm, plastic plate=0.2mm-0.3mm.

The thickness of the adhesive layer on the plastic plate can be set to 0.2mm-0.35mm, and the side length of the cross-section of the silicon rod is 182±0.25mm, so as to obtain large-size silicon wafers of 182 specifications by cutting.

When bonding, the amount of iron plate glue is 0.052 g/cm2-0.062 g/cm2, and the amount of sticky glue is 0.07 g/cm2-0.084 g/cm2.

In actual implementation, the crystal support is adhered to the plastic plate, and the plastic plate is adhered to the silicon block to ensure neutrality. The ballast strength of 6500 N/m2-900 N/m2 is pressed on the surface of the plastic plate and the silicon block in sequence. Curing times were less than 1 hour and greater than 2.5 hours, respectively.

Step 2, the cutting line 200 is arranged.

Arrange the cutting line 200 on the guide roller assembly, the initial wiring network width is 30mm-50mm, ensure that the cutting line 200 is arranged behind the guide roller assembly with a certain tension, and then arrange the cutting line network 210 including multiple cutting line segments .

According to the staggered distance between the two staggered wire grooves is 0.5mm-1mm, the number of staggered wire grooves on the same guide roller is 2-5, and the cutting line 200 is arranged on the guide roller assembly. A cutting wire web 210 is formed between the first guide roller 110 and the second guide roller 120 .

Step 3: Tool setting.

Put the bonded silicon rods into the slicing chamber, and clamp the crystal holder, without shaking, first lower the workbench quickly, and change the height of 10mm-20mm from the cutting wire mesh 210 to lower slowly.

The silicon rod is lowered to the cutting zero point, and the silicon rod and the wire mesh are not allowed to contact each other. The gap in the middle is just inserted into a piece of A4 hard cardboard, and the thickness of the A4 hard cardboard is about 0.3 mm.

Step 4: Cutting program setting.

In this step, the cutting program is set according to the values shown in Table 1, the lowering of the workbench is controlled, and the rotation of the guide roller drives the cutting line 200 to cut the silicon rod.

The position in Table 1 indicates the position of the cutting line 200 in the silicon ingot, the negative number indicates that the cutting line 200 has not cut into the silicon ingot, and the table speed indicates the descending speed of the workbench.

The line speed is the speed at which the guide roller drives the cutting line 200 to move, the incoming line represents the length of the cutting line 200 entering the line, and the returning line represents the length of the cutting line 200 returning to the threading process.

The tension at both ends is the tension at both ends of the cutting line, for example, 4.0/4.0 means that the tension at the left end of the cutting line is 4.0 Newtons, and the tension at the right end is 4.0 Newtons, the flow rate is the liquid flow in the slicer, and the temperature refers to the temperature in the slicer.

In this embodiment, during the first cutting cycle of the cutting line 200, the depth of cutting into the silicon rod is guaranteed to be 0.8mm-1.0mm.

Step five, cutting.

Table 1

Add 270 liters to 350 liters of pure water to the large tank of the slicer, add 1.5 liters to 3.0 liters of cooling liquid, and start cutting after heating up.

After the silicon rods are sliced, degummed, inserted, cleaned and sorted, the thickness and TTV value of each silicon wafer are detected and recorded.

In this embodiment, the normal range of the mean TTV is 9 microns to 14 microns, the mean TTV is greater than 14 microns, the number of wrong grooves is increased, and the TTV value is less than 9 microns, the number of wrong grooves is reduced.

As shown in Table 2, it is the thickness data of Example 1, which is cut according to the wiring method and cutting program of the embodiment of the present invention, and Comparative Example 1, which has no wrong groove, knife setting and wire entry depth settings.

Table 2

In this embodiment, cutting according to the wiring method and cutting procedure of the embodiment of the present invention can effectively reduce the average value of TTV, improve the thickness of large-sized silicon wafers and the uniformity of TTV, and improve the finished product quality and cutting quality of large-sized silicon wafers. rate increase.

The cutting equipment for large-size silicon wafers provided by the embodiments of the present invention is described below. The cutting equipment for large-size silicon wafers described below can use the above-described cutting method for large-size silicon wafers to cut silicon rods to obtain large-size silicon wafers.

The cutting equipment of the large-size silicon chip that the embodiment of the present invention provides, comprises:

A guide roller assembly, the guide roller assembly includes three guide rollers arranged in a triangle, and the axial directions of the three guide rollers are parallel;

Cutting line 200, the cutting line 200 is wound around the guide roller assembly along the circumference of the guide roller assembly to form a plurality of cutting line segments, and the plurality of cutting line segments are arranged along the axial direction of the guide roller assembly to form a cutting line network 210;

Workbench, the workbench is used to place the silicon block to be cut;

A driving mechanism, the driving mechanism is connected with the guide roller assembly and the cutting line 200, and the driving mechanism is used to drive the cutting line 200 to perform periodic reciprocating motion along the circumferential direction of the guide roller assembly;

A controller, the controller is connected with the workbench and the driving mechanism, the controller is used in the above method for cutting large-size silicon wafers, controls the workbench and the drive mechanism to cut silicon rods, and obtains large-size silicon wafers.

According to the cutting equipment for large-sized silicon wafers provided by the embodiment of the present invention, by controlling the cutting depth of the cutting wire 200 to reach the target depth in the wire-feeding process of the first cutting cycle, it is possible to prevent the cutting wire 200 from shaking during the cutting process. The thickness of the silicon wafer and the uniformity of TTV will affect the finished product quality and cutting yield of large-size silicon wafers.

In some embodiments, wire grooves are provided along the circumferential direction of the guide roller, and a plurality of wire grooves are arranged along the circumference of the guide roller. The wire grooves are used to accommodate the cutting line segments, and the plurality of wire grooves of the guide roller correspond to the plurality of cutting line segments one by one. .

In some embodiments, the distance between two adjacent slots is 0.20mm-0.22mm, and the diameter of the cutting wire 200 is 0.035mm-0.040mm.

In some embodiments, the slots of the two guide rollers corresponding to the cutting line segment are arranged in a staggered manner.

In some embodiments, the staggered distance between the two staggered wire slots is 0.5 mm-1 mm, and the number of staggered wire slots on the same guide roller is 2-5.

An embodiment of the present invention also provides a large-size silicon wafer, which is obtained by cutting the large-size silicon wafer using the above-mentioned cutting method for the large-size silicon wafer.

The large-size silicon wafer cutting device provided by the embodiment of the present invention is described below, and the large-size silicon wafer cutting device described below and the above-mentioned large-size silicon wafer cutting method can be referred to for each other.

As shown in Figure 5, the cutting device of the large-size silicon wafer provided by the embodiment of the present invention includes:

The first processing module 510 is used to control the silicon rod to be cut to move to the cutting zero point position of the cutting wire web, the cutting wire web includes a plurality of cutting line segments formed by winding the cutting line around the guide roller assembly along the circumferential direction of the guide roller assembly, A plurality of cutting line segments are arranged along the axial direction of the guide roller assembly, and the guide roller assembly includes three guide rollers arranged in a triangle, and the axial directions of the three guide rollers are parallel;

The second processing module 520 is used to control the movement of the silicon rods to the cutting wire network, and control the cutting wire to perform periodic reciprocating motion along the circumferential direction of the guide roller assembly to cut the silicon rods to obtain multiple large-sized silicon wafers;

Among them, the depth of the cutting line cutting into the silicon rod in the line-entry process of the first cutting cycle is the target depth, the movement of the cutting line along the first rotation direction of the guide roller assembly corresponds to the line-entry process, and the cutting line moves along the circumferential direction of the guide roller assembly. The movement in the second rotation direction corresponds to the thread return process, the first rotation direction is opposite to the second rotation direction, and each cutting cycle includes the thread entry process and the thread return process.

In some embodiments, the target depth is 0.8mm-1.0mm.

In some embodiments, the cutting zero position is a position at a target distance from the cutting wire web.

In some embodiments, the target distance is 0.2mm-0.4mm.

In some embodiments, the first processing module 510 is configured to control the silicon rod to move at a first speed to a position at a first distance from the cutting wire net, where the first distance is greater than the target distance;

The silicon rod is controlled to move to the cutting zero position at a second speed, and the first speed is greater than the second speed.

In some embodiments, the first distance is 10mm-20mm.

FIG. 6 illustrates a schematic diagram of the physical structure of an electronic device. As shown in FIG. 6, the electronic device may include: a processor (processor) 610, a communication interface (Communications Interface) 620, a memory (memory) 630 and a communication bus 640, Wherein, the processor 610 , the communication interface 620 , and the memory 630 communicate with each other through the communication bus 640 . The processor 610 can call the logic instructions in the memory 630 to execute the method for cutting large-sized silicon wafers. The method includes: controlling the silicon rod to be cut to move to the cutting zero point position of the cutting line network, the cutting line network includes the cutting line along the guide The circumference of the roller assembly is set around multiple cutting line segments formed by the guide roller assembly. The multiple cutting line segments are arranged along the axial direction of the guide roller assembly. The guide roller assembly includes three guide rollers arranged in a triangle. The three guide rollers parallel to the axial direction;

Control the silicon rods to move to the cutting wire network, and control the cutting wire to perform periodic reciprocating motion along the circumference of the guide roller assembly to cut the silicon rods to obtain multiple large-sized silicon wafers;

Among them, the depth of the cutting line cutting into the silicon rod in the line-entry process of the first cutting cycle is the target depth, the movement of the cutting line along the first rotation direction of the guide roller assembly corresponds to the line-entry process, and the cutting line moves along the circumferential direction of the guide roller assembly. The movement in the second rotation direction corresponds to the thread return process, the first rotation direction is opposite to the second rotation direction, and each cutting cycle includes the thread entry process and the thread return process.

In addition, the logic instructions in the above-mentioned memory 630 may be implemented in the form of software functional units and when sold or used as an independent product, may be stored in a computer-readable storage medium. Based on this understanding, the essence of the technical solution of the present invention or the part that contributes to the prior art or the part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including Several instructions are used to make a computer device (which may be a personal computer, a server, or a network device, etc.) execute all or part of the steps of the methods described in various embodiments of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program codes. .

On the other hand, the present invention also provides a computer program product, the computer program product includes a computer program stored on a non-transitory computer-readable storage medium, the computer program includes program instructions, and when the program instructions are executed by a computer During execution, the computer can execute the method for cutting large-sized silicon wafers provided by the above-mentioned methods. The method includes: controlling the silicon rod to be cut to move to the cutting zero point position of the cutting wire network, and the cutting wire network includes the cutting line along the guide roller assembly. The circumferential direction of the guide roller assembly is set around multiple cutting line segments formed by the guide roller assembly, and the multiple cutting line segments are arranged along the axial direction of the guide roller assembly. The guide roller assembly includes three guide rollers arranged in a triangle, and the axial direction of the three guide rollers direction parallel;

Control the silicon rods to move to the cutting wire network, and control the cutting wire to perform periodic reciprocating motion along the circumference of the guide roller assembly to cut the silicon rods to obtain multiple large-sized silicon wafers;

Among them, the depth of the cutting line cutting into the silicon rod in the line-entry process of the first cutting cycle is the target depth, the movement of the cutting line along the first rotation direction of the guide roller assembly corresponds to the line-entry process, and the cutting line moves along the circumferential direction of the guide roller assembly. The movement in the second rotation direction corresponds to the thread return process, the first rotation direction is opposite to the second rotation direction, and each cutting cycle includes the thread entry process and the thread return process.

In yet another aspect, the present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, it is implemented to perform the cutting methods of the large-size silicon wafers provided above, the The method includes: controlling the silicon rod to be cut to move to the cutting zero point position of the cutting wire network, the cutting wire network includes a plurality of cutting line segments formed by winding the guide roller assembly along the circumferential direction of the guide roller assembly, and the plurality of cutting line segments are formed along the The axial arrangement of the guide roller assembly, the guide roller assembly includes three guide rollers arranged in a triangle, and the axial directions of the three guide rollers are parallel;

Control the silicon rods to move to the cutting wire network, and control the cutting wire to perform periodic reciprocating motion along the circumference of the guide roller assembly to cut the silicon rods to obtain multiple large-sized silicon wafers;

Among them, the depth of the cutting line cutting into the silicon rod in the line-entry process of the first cutting cycle is the target depth, the movement of the cutting line along the first rotation direction of the guide roller assembly corresponds to the line-entry process, and the cutting line moves along the circumferential direction of the guide roller assembly. The movement in the second rotation direction corresponds to the thread return process, the first rotation direction is opposite to the second rotation direction, and each cutting cycle includes the thread entry process and the thread return process.

The device embodiments described above are only illustrative, and the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in One place, or it can be distributed to multiple network elements. Part or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. It can be understood and implemented by those skilled in the art without any creative efforts.

Through the above description of the implementations, those skilled in the art can clearly understand that each implementation can be implemented by means of software plus a necessary general hardware platform, and of course also by hardware. Based on this understanding, the essence of the above technical solution or the part that contributes to the prior art can be embodied in the form of software products, and the computer software products can be stored in computer-readable storage media, such as ROM/RAM, magnetic discs, optical discs, etc., including several instructions to make a computer device (which may be a personal computer, server, or network device, etc.) execute the methods described in various embodiments or some parts of the embodiments.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims (11)

1. A method for cutting a large-size silicon wafer is characterized by comprising the following steps:

controlling a silicon rod to be cut to move to a cutting zero point position of a cutting wire net, wherein the cutting wire net comprises a plurality of cutting wire sections formed by winding cutting wires around a guide roller assembly along the circumferential direction of the guide roller assembly, the plurality of cutting wire sections are arranged along the axial direction of the guide roller assembly, the guide roller assembly comprises three guide rollers which are arranged in a triangular shape, and the axial directions of the three guide rollers are parallel;

controlling the silicon rod to move towards the cutting wire net, and controlling the cutting wire to do periodic reciprocating motion along the circumferential direction of the guide roller assembly to cut the silicon rod to obtain a plurality of large-size silicon wafers;

the cutting line is moved along a first rotating direction of the circumferential direction of the guide roller assembly and corresponds to a line feeding process, the first rotating direction is opposite to the second rotating direction, and each cutting cycle comprises the line feeding process and the line returning process.

2. The method for cutting a large-sized silicon wafer according to claim 1, wherein the target depth is 0.8 mm to 1.0 mm.

3. The method of claim 1 or 2, wherein the cut zero position is a position at a target distance from the cutting line net.

4. The method of claim 3, wherein the target distance is 0.2 mm to 0.4 mm.

5. The method for cutting large-size silicon wafers according to claim 3, wherein the controlling the silicon rods to be cut to move to the cutting zero point position of the cutting wire net comprises:

controlling the silicon rod to move to a position a first distance from the wire web at a first speed, the first distance being greater than the target distance;

controlling the silicon rod to move to the cut-zero position at a second speed, the first speed being greater than the second speed.

6. The method of claim 5, wherein the first distance is in a range of 10mm to 20 mm.

7. An apparatus for cutting a large-sized silicon wafer, comprising:

the guide roller assembly comprises three guide rollers which are arranged in a triangular shape, and the axial directions of the three guide rollers are parallel;

the cutting wire is wound on the guide roller assembly along the circumferential direction of the guide roller assembly to form a plurality of cutting wire segments, and the cutting wire segments are arranged along the axial direction of the guide roller assembly to form a cutting wire net;

the worktable is used for placing a silicon block to be cut;

the driving mechanism is connected with the guide roller assembly and the cutting wire and is used for driving the cutting wire to do periodic reciprocating motion along the circumferential direction of the guide roller assembly;

a controller, connected to the worktable and the driving mechanism, for controlling the worktable and the driving mechanism to cut the silicon rod to obtain a large-size silicon wafer based on the method for cutting a large-size silicon wafer as claimed in any one of claims 1 to 6.

8. The apparatus for cutting large-size silicon wafers according to claim 5, wherein a plurality of wire grooves are arranged along the circumference of the guide roller, the plurality of wire grooves are used for accommodating the cut wire segments, and the plurality of wire grooves of the guide roller correspond to the plurality of cut wire segments one to one.

9. The device for cutting the large-size silicon wafer according to claim 8, wherein the distance between every two adjacent wire grooves is 0.20-0.22 mm, and the wire diameter of the cutting wire is 0.035-0.040 mm.

10. The apparatus for cutting large size silicon wafers as claimed in claim 8, wherein the wire grooves of the two guide rollers corresponding to the cut line are staggered.

11. The apparatus for cutting large size silicon wafers as claimed in claim 10, wherein the two staggered wire slots are staggered by a distance of 0.5 mm to 1 mm, and the number of the staggered wire slots on the same guide roller is 2 to 5.

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