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CN115255606A - A kind of copper and graphite diffusion connection method containing aluminum intermediate layer - Google Patents

A kind of copper and graphite diffusion connection method containing aluminum intermediate layer Download PDF

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CN115255606A
CN115255606A CN202210706527.0A CN202210706527A CN115255606A CN 115255606 A CN115255606 A CN 115255606A CN 202210706527 A CN202210706527 A CN 202210706527A CN 115255606 A CN115255606 A CN 115255606A
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graphite
copper
connection
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aluminum
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CN115255606B (en
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杨健
杨秋果
张知航
黄继华
陈树海
叶政
王万里
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University of Science and Technology Beijing USTB
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/14Preventing or minimising gas access, or using protective gases or vacuum during welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023Thermo-compression bonding
    • B23K20/026Thermo-compression bonding with diffusion of soldering material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24Preliminary treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/26Auxiliary equipment

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Abstract

一种含铝中间层的铜与石墨扩散连接方法,属于异种材料连接技术领域。本发明采用磁控溅射技术在石墨表面制备微米级的铝中间层,而后与铜装配进行真空扩散连接;在连接过程中,采用“二段法”工艺,首先使铜基体与铝中间层互扩散形成CuAl合金层,而后再与石墨基体进行扩散连接,最终形成铜/CuAl合金层/Al4C3化合物/石墨结构的连接接头。本发明的优点在于:(1)大幅度降低铜与石墨的扩散连接温度,降低了焊接应力;(2)促使连接界面发生反应,保证接头各界面均为良好的冶金结合。

Figure 202210706527

A copper and graphite diffusion connection method with an aluminum intermediate layer belongs to the technical field of connection of dissimilar materials. The invention adopts the magnetron sputtering technology to prepare the micron-level aluminum intermediate layer on the graphite surface, and then performs vacuum diffusion connection with the copper assembly; in the connection process, the "two-stage method" process is adopted, and the copper matrix and the aluminum intermediate layer are first made of each other. The CuAl alloy layer is formed by diffusion, and then diffusion connection is performed with the graphite matrix, and finally a connection joint of the copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure is formed. The advantages of the present invention are: (1) greatly reducing the diffusion bonding temperature of copper and graphite, and reducing welding stress; (2) promoting the reaction of the connection interface to ensure that each interface of the joint is a good metallurgical bond.

Figure 202210706527

Description

一种含铝中间层的铜与石墨扩散连接方法Copper and graphite diffusion connection method of an aluminum-containing interlayer

技术领域technical field

本发明属于异种材料焊接技术领域,特别是提供一种适用于铜与石墨的低连接温度、界面结合良好的扩散连接方法。The invention belongs to the technical field of dissimilar material welding, and in particular provides a diffusion connection method suitable for low connection temperature and good interface bonding of copper and graphite.

背景技术Background technique

石墨具有良好的导热性、导电性、高熔点、良好的抗热震性、抗热疲劳性、耐腐蚀性等优点,已经在冶金、电子、汽车、核电、航空航天等领域得到了越来越广泛的应用。然而,由于石墨存在强度低、脆性大、表面易掉黑等问题,难以单独应用,通常需要将其与金属进行连接制备部件。铜由于具有优良的导电导热性、延展性和耐辐射性等优点,是与石墨进行连接制备结构、功能部件最具前景的金属材料。石墨与铜的连接件,当前已经在核聚变反应堆的第一壁和汽车电机的换向器中得到了广泛应用。由于石墨与铜的熔点差异较大,因此难以采用熔化焊进行连接,当前石墨与铜的连接普遍采用扩散连接的方式进行连接。然而,石墨与铜扩散连接的难度较大,主要表现在(1)为了促进连接过程中石墨与铜之间的扩散,目前扩散连接温度普遍较高,而石墨与铜之间的热膨胀系数差异悬殊,在高温连接条件下接头会产生较大残余热应力;(2)石墨(碳)与铜之间相互作用较弱,既不能相互固溶,也不能形成金属间化合物,因此连接界面往往只处于“机械咬合”状态而非冶金结合,导致连接界面结合性差。因此,研究开发一种面向铜与石墨的低连接温度、界面结合良好的扩散连接方法已经成为异种材料连接领域所面临的关键问题之一。Graphite has the advantages of good thermal conductivity, electrical conductivity, high melting point, good thermal shock resistance, thermal fatigue resistance, corrosion resistance, etc., and has been used more and more in metallurgy, electronics, automobiles, nuclear power, aerospace and other fields. Wide range of applications. However, due to the problems of low strength, high brittleness, and easy blackening of the surface of graphite, it is difficult to use it alone, and it is usually necessary to connect it with metal to prepare parts. Due to its excellent electrical and thermal conductivity, ductility and radiation resistance, copper is the most promising metal material for connecting with graphite to prepare structural and functional components. Graphite and copper connectors have been widely used in the first wall of nuclear fusion reactors and commutators of automobile motors. Due to the large difference in the melting points of graphite and copper, it is difficult to use fusion welding to connect. Currently, the connection between graphite and copper is generally connected by diffusion connection. However, the diffusion connection between graphite and copper is more difficult, which is mainly reflected in (1) in order to promote the diffusion between graphite and copper during the connection process, the current diffusion connection temperature is generally high, and the thermal expansion coefficient difference between graphite and copper is very different , the joint will produce a large residual thermal stress under the condition of high temperature connection; (2) The interaction between graphite (carbon) and copper is weak, neither solid solution with each other nor intermetallic compound can be formed, so the connection interface is often only in the A "mechanical occlusion" state rather than a metallurgical bond results in poor interfacial bonding. Therefore, research and development of a diffusion bonding method for copper and graphite with low bonding temperature and good interfacial bonding has become one of the key issues in the field of bonding dissimilar materials.

发明内容Contents of the invention

本发明的目的是针对目前铜/石墨扩散连接中存在的连接温度高导致接头热应力大、石墨与铜之间相互作用弱导致界面结合性较差的问题,提出一种含铝中间层的铜与石墨扩散连接方法,该方法能够大幅度降低铜与石墨的扩散连接温度,降低了焊接应力,并促使连接界面发生反应,保证接头各界面均为良好的冶金结合。The purpose of the present invention is to propose a copper alloy with an aluminum-containing intermediate layer for the problems that the high connection temperature in the current copper/graphite diffusion connection leads to large joint thermal stress, and the weak interaction between graphite and copper leads to poor interfacial bonding. Diffusion connection method with graphite, which can greatly reduce the diffusion connection temperature of copper and graphite, reduce welding stress, and promote the reaction of the connection interface to ensure good metallurgical bonding at all interfaces of the joint.

一种含铝中间层的铜与石墨扩散连接方法,其特征在于采用磁控溅射技术在石墨表面制备微米级的铝中间层,而后与铜装配进行真空扩散连接;在连接过程中,采用“二段法”工艺,首先使铜基体与铝中间层互扩散形成CuAl合金层,而后再与石墨基体进行扩散连接,最终形成铜/CuAl合金层/Al4C3化合物/石墨结构的连接接头。A copper-graphite diffusion connection method for an aluminum-containing interlayer, characterized in that a micron-sized aluminum interlayer is prepared on the graphite surface by magnetron sputtering technology, and then assembled with copper for vacuum diffusion connection; during the connection process, " The two-stage method" process firstly makes the copper substrate interdiffused with the aluminum intermediate layer to form a CuAl alloy layer, and then diffuses and connects with the graphite substrate, finally forming a connection joint of copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure.

本发明具体工艺过程包括以下步骤:Concrete technological process of the present invention comprises the following steps:

步骤1,将打磨、抛光、超声波清洗、干燥处理后的石墨和铝靶材分别放置于磁控溅射系统样品室和靶材台,将样品室抽真空至1×10-3Pa~5×10-4Pa;Step 1, place the graphite and aluminum targets after grinding, polishing, ultrasonic cleaning and drying in the sample chamber and target stage of the magnetron sputtering system respectively, and vacuum the sample chamber to 1×10 -3 Pa~5× 10 -4 Pa;

步骤2,向样品室通入高纯度氩气至样品室内压力为0.5~0.8Pa,并将样品室的温度稳定在20℃~30℃,打开磁控溅射开关,向石墨表面溅射Al涂层,溅射时间45min~60min,溅射功率60W~85W,溅射涂层厚度为15~20μm;Step 2: Infuse high-purity argon gas into the sample chamber until the pressure in the sample chamber is 0.5-0.8 Pa, and stabilize the temperature of the sample chamber at 20°C-30°C, turn on the magnetron sputtering switch, and sputter Al coating on the graphite surface. layer, the sputtering time is 45min~60min, the sputtering power is 60W~85W, and the sputtering coating thickness is 15~20μm;

步骤3,将步骤2得到的溅射Al涂层的石墨再次打磨、抛光、超声波清洗、干燥处理后,与铜的待连接面进行装配,将铜置于经过磁控溅射Al镀层的石墨上方并放置于真空扩散连接模具中,得到装配好的预置焊接件;Step 3, after grinding, polishing, ultrasonic cleaning, and drying the sputtered Al-coated graphite obtained in step 2, assemble it with the copper surface to be connected, and place the copper on the magnetron sputtered Al-coated graphite and placed in the vacuum diffusion connection mold to obtain the assembled pre-welded parts;

步骤4,将装配好的预置焊接件放入高真空扩散焊炉的炉膛中并抽真空,当真空度达到1×10-4Pa时,开始加热加压,以4~8MPa/min的加压速率加载至40~60MPa并始终保持该压力,以5~10℃/min的升温速率升高至500~550℃并保温10~20min,而后再以5~10℃/min的升温速率升高至650~700℃,保温10~20min后随炉冷却,得到铜/CuAl合金层/Al4C3化合物/石墨结构的连接接头。Step 4, put the assembled pre-welded parts into the hearth of the high-vacuum diffusion welding furnace and evacuate it. When the vacuum degree reaches 1×10 -4 Pa, start heating and pressurizing at a pressure of 4-8 MPa/min. Load the pressure rate to 40~60MPa and keep the pressure all the time, raise the temperature to 500~550℃ at a rate of 5~10℃/min and keep it for 10~20min, and then increase the temperature at a rate of 5~10℃/min to 650-700° C., keep warm for 10-20 minutes, and then cool with the furnace to obtain a connection joint of copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure.

进一步地,步骤1所述的打磨、抛光、超声波清洗、干燥处理是将石墨和铝激光脉冲溅射靶材表面进行打磨、抛光后依次用丙酮、酒精、去离子水进行超声波清洗15~20min,放入恒温为40~50℃的干燥箱中干燥处理20~30min。Further, the grinding, polishing, ultrasonic cleaning, and drying treatment described in step 1 are to grind and polish the surface of graphite and aluminum laser pulse sputtering targets, and then use acetone, alcohol, and deionized water to perform ultrasonic cleaning for 15 to 20 minutes, Put it into a drying oven with a constant temperature of 40-50°C for 20-30 minutes.

进一步地,步骤3所述的打磨、抛光、超声波清洗、干燥处理是将经过磁控溅射Al涂层的石墨和铜表面进行打磨、抛光后依次用丙酮、酒精、去离子水进行超声波清洗15~20min,放入恒温为40~50℃的干燥箱中干燥处理20~30min。Further, the grinding, polishing, ultrasonic cleaning, and drying treatment described in step 3 are to grind and polish the graphite and copper surfaces coated with magnetron sputtering Al, and then use acetone, alcohol, and deionized water to perform ultrasonic cleaning for 15 minutes. ~20min, put it into a drying oven with a constant temperature of 40~50°C for 20~30min.

本发明具有如下优点:The present invention has the following advantages:

(1)以铝为中间层对铜与石墨采用“二段法”工艺进行扩散连接,借助铝元素与铜元素、铝元素与碳元素的强相互作用,在较低温度条件下即可实现连接,大幅度降低了连接接头焊接应力;(1) Copper and graphite are diffused and connected using the "two-stage method" process with aluminum as the intermediate layer. With the help of the strong interaction between aluminum and copper elements, aluminum and carbon elements, the connection can be realized at a relatively low temperature , greatly reducing the welding stress of the connecting joint;

(2)以铝为中间层对铜与石墨进行扩散连接,在第一阶段,铜/铝界面处发生元素互扩散,使铝中间层转变为CuAl合金层;第二阶段,CuAl合金层/石墨界面处发生反应,生成Al4C3化合物。借助铝中间层,避免了铜与石墨之间由于相互作用较弱导致连接界面仅为“机械咬合”的状态,连接接头各界面均实现了良好的冶金结合。(2) Copper and graphite are diffused and connected with aluminum as the intermediate layer. In the first stage, interdiffusion of elements occurs at the copper/aluminum interface, so that the aluminum intermediate layer is transformed into a CuAl alloy layer; in the second stage, the CuAl alloy layer/graphite A reaction occurs at the interface to generate Al 4 C 3 compound. With the help of the aluminum interlayer, it is avoided that the connection interface between copper and graphite is only "mechanically occluded" due to the weak interaction, and each interface of the connection joint has achieved good metallurgical bonding.

附图说明Description of drawings

图1为实施例1含铝中间层的铜/石墨扩散连接接头组织扫描电镜图像。左侧为石墨,右侧为铜,连接界面组织中靠近石墨一侧为Al4C3化合物层,靠近铜一侧为CuAl合金层;连接接头各界面致密无缺陷,形成了良好的冶金结合。Fig. 1 is a scanning electron microscope image of the structure of the copper/graphite diffusion bonded joint with an aluminum interlayer in Example 1. Graphite on the left and copper on the right. The Al 4 C 3 compound layer is on the side close to the graphite in the connection interface structure, and the CuAl alloy layer is on the side close to the copper. The interfaces of the connection joints are dense and defect-free, forming a good metallurgical bond.

具体实施方式Detailed ways

实施例1Example 1

本实施例是一种铜与石墨的焊接方法。所涉及的铜为T1紫铜,机械加工成Φ15mm×3mm的圆柱;所涉及的石墨为Φ15mm×3mm的圆柱状石墨。This embodiment is a welding method of copper and graphite. The copper involved is T1 red copper, which is machined into a cylinder of Φ15mm×3mm; the graphite involved is cylindrical graphite of Φ15mm×3mm.

本实施例的具体过程包括以下步骤:The specific process of this embodiment includes the following steps:

步骤1,将铜、石墨和铝磁控溅射靶材的表面打磨、抛光后,依次用丙酮、酒精、去离子水进行超声波清洗15min,放入恒温为50℃的干燥箱中干燥处理25min,将干燥处理后的石墨和铝靶材分别放置于磁控溅射系统样品室和靶材台,将样品室抽真空至5×10-4Pa;Step 1. After grinding and polishing the surface of the copper, graphite and aluminum magnetron sputtering targets, ultrasonically clean them with acetone, alcohol, and deionized water for 15 minutes, and then dry them in a drying oven with a constant temperature of 50°C for 25 minutes. Place the dried graphite and aluminum targets in the sample chamber and target stage of the magnetron sputtering system respectively, and evacuate the sample chamber to 5×10 -4 Pa;

步骤2,向样品室通入高纯度氩气至样品室内压力为0.6Pa,并将样品室的温度稳定在24℃,打开磁控溅射开关,向石墨表面溅射Al涂层,溅射时间50min,溅射功率65W;Step 2: Infuse high-purity argon gas into the sample chamber until the pressure in the sample chamber is 0.6Pa, and stabilize the temperature of the sample chamber at 24°C, turn on the magnetron sputtering switch, and sputter Al coating on the graphite surface. 50min, sputtering power 65W;

步骤3,将经过磁控溅射Al涂层的石墨和铜表面进行打磨、抛光后依次用丙酮、酒精、去离子水进行超声波清洗15min,放入恒温为50℃的干燥箱中干燥处理25min。将经过磁控溅射Al涂层的石墨与铜的待连接面进行装配,将铜置于经过磁控溅射Al镀层的石墨上方并放置于真空扩散连接模具中;Step 3: Grinding and polishing the Al-coated graphite and copper surfaces by magnetron sputtering, followed by ultrasonic cleaning with acetone, alcohol, and deionized water for 15 minutes, and drying in a drying oven at a constant temperature of 50°C for 25 minutes. Assembling the graphite coated with magnetron sputtered Al and the copper surface to be connected, placing the copper above the graphite coated with magnetron sputtered Al and placing it in a vacuum diffusion connection mold;

步骤4,将装配好的预置焊接件放入高真空扩散焊炉的炉膛中并抽真空,当真空度达到1×10-4Pa时,开始加热加压,以4MPa/min的加压速率加载至40MPa并始终保持该压力,以10℃/min的升温速率升高至550℃并保温10min,而后再以8℃/min的升温速率升高至650℃,保温10min后随炉冷却,得到铜/CuAl合金层/Al4C3化合物/石墨结构的连接接头。Step 4, put the assembled pre-welded parts into the hearth of the high-vacuum diffusion welding furnace and evacuate it. When the vacuum degree reaches 1×10 -4 Pa, start heating and pressurizing at a pressurization rate of 4MPa/min Load to 40MPa and maintain the pressure all the time, raise the temperature to 550°C at a rate of 10°C/min and keep it for 10 minutes, then raise it to 650°C at a rate of 8°C/min, keep it for 10 minutes and then cool it with the furnace to get Connection joint of copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure.

步骤5,将步骤4得到的T1紫铜和石墨接头通过机械加工沿轴线截面切开,用砂纸对界面打磨后抛光,制备成金相试样,采用扫描电子显微镜观察接头微观组织结构,如图1所示,最终获得连接接头为铜/CuAl合金层/Al4C3化合物/石墨结构,接头各界面致密无缺陷,形成了良好的冶金结合。本方法铜与石墨的最高扩散连接温度为650℃,远低于现有铜/石墨扩散连接技术的连接温度870℃,有效降低焊接应力。Step 5: Cut the T1 red copper and graphite joint obtained in step 4 along the axial section by machining, polish the interface with sandpaper, prepare a metallographic sample, and observe the microstructure of the joint with a scanning electron microscope, as shown in Figure 1 As shown, the final connection joint is a copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure, and each interface of the joint is dense and defect-free, forming a good metallurgical bond. The highest diffusion connection temperature of copper and graphite in this method is 650°C, which is far lower than the connection temperature of 870°C in the existing copper/graphite diffusion connection technology, effectively reducing welding stress.

实施例2Example 2

本实施例是一种铜与石墨的焊接方法。所涉及的铜为T1紫铜,机械加工成Φ15mm×3mm的圆柱;所涉及的石墨为Φ15mm×3mm的圆柱状石墨。This embodiment is a welding method of copper and graphite. The copper involved is T1 red copper, which is machined into a cylinder of Φ15mm×3mm; the graphite involved is cylindrical graphite of Φ15mm×3mm.

本实施例的具体过程包括以下步骤:The specific process of this embodiment includes the following steps:

步骤1,将铜、石墨和铝磁控溅射靶材的表面打磨、抛光后,依次用丙酮、酒精、去离子水进行超声波清洗20min,放入恒温为50℃的干燥箱中干燥处理30min,将干燥处理后的石墨和铝靶材分别放置于磁控溅射系统样品室和靶材台,将样品室抽真空至5×10-4Pa;Step 1. After grinding and polishing the surface of the copper, graphite and aluminum magnetron sputtering targets, ultrasonically clean them with acetone, alcohol, and deionized water for 20 minutes, and then dry them in a drying oven with a constant temperature of 50°C for 30 minutes. Place the dried graphite and aluminum targets in the sample chamber and target stage of the magnetron sputtering system respectively, and evacuate the sample chamber to 5×10 -4 Pa;

步骤2,向样品室通入高纯度氩气至样品室内压力为0.7Pa,并将样品室的温度稳定在26℃,打开磁控溅射开关,向石墨表面溅射Al涂层,溅射时间55min,溅射功率75W;Step 2: Infuse high-purity argon gas into the sample chamber until the pressure in the sample chamber is 0.7 Pa, and stabilize the temperature of the sample chamber at 26°C, turn on the magnetron sputtering switch, and sputter Al coating on the graphite surface, the sputtering time is 55min, sputtering power 75W;

步骤3,将经过磁控溅射Al涂层的石墨和铜表面进行打磨、抛光后依次用丙酮、酒精、去离子水进行超声波清洗20min,放入恒温为50℃的干燥箱中干燥处理20min。将经过磁控溅射Al涂层的石墨与铜的待连接面进行装配,将铜置于经过磁控溅射Al镀层的石墨上方并放置于真空扩散连接模具中;Step 3: Grinding and polishing the Al-coated graphite and copper surfaces by magnetron sputtering, followed by ultrasonic cleaning with acetone, alcohol, and deionized water for 20 minutes, and drying in a drying oven at a constant temperature of 50°C for 20 minutes. Assembling the graphite coated with magnetron sputtered Al and the copper surface to be connected, placing the copper above the graphite coated with magnetron sputtered Al and placing it in a vacuum diffusion connection mold;

步骤4,将装配好的预置焊接件放入高真空扩散焊炉的炉膛中并抽真空,当真空度达到1×10-4Pa时,开始加热加压,以5MPa/min的加压速率加载至45MPa并始终保持该压力,以10℃/min的升温速率升高至520℃并保温15min,而后再以5℃/min的升温速率升高至680℃,保温15min后随炉冷却,得到铜/CuAl合金层/Al4C3化合物/石墨结构的连接接头。Step 4, put the assembled pre-welded parts into the hearth of the high-vacuum diffusion welding furnace and vacuumize it. When the vacuum degree reaches 1×10 -4 Pa, start heating and pressurizing at a pressurization rate of 5MPa/min Load to 45MPa and maintain the pressure all the time, raise the temperature to 520°C at a rate of 10°C/min and keep it for 15 minutes, then raise it to 680°C at a rate of 5°C/min, keep it for 15 minutes and then cool it with the furnace to get Connection joint of copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure.

步骤5,将步骤4得到的T1紫铜和石墨接头通过机械加工沿轴线截面切开,用砂纸对界面打磨后抛光,制备成金相试样,采用扫描电子显微镜观察接头微观组织结构。In step 5, the T1 red copper and graphite joint obtained in step 4 is cut along the axial section by machining, the interface is polished with sandpaper and then polished to prepare a metallographic sample, and the microstructure of the joint is observed with a scanning electron microscope.

实施例3Example 3

本实施例是一种铜与石墨的焊接方法。所涉及的铜为T1紫铜,机械加工成Φ15mm×3mm的圆柱;所涉及的石墨为Φ15mm×3mm的圆柱状石墨。This embodiment is a welding method of copper and graphite. The copper involved is T1 red copper, which is machined into a cylinder of Φ15mm×3mm; the graphite involved is cylindrical graphite of Φ15mm×3mm.

本实施例的具体过程包括以下步骤:The specific process of this embodiment includes the following steps:

步骤1,将铜、石墨和铝磁控溅射靶材的表面打磨、抛光后,依次用丙酮、酒精、去离子水进行超声波清洗20min,放入恒温为50℃的干燥箱中干燥处理20min,将干燥处理后的石墨和铝靶材分别放置于磁控溅射系统样品室和靶材台,将样品室抽真空至5×10-4Pa;Step 1. After grinding and polishing the surface of the copper, graphite and aluminum magnetron sputtering targets, ultrasonically clean them with acetone, alcohol, and deionized water for 20 minutes, and then dry them in a drying oven with a constant temperature of 50°C for 20 minutes. Place the dried graphite and aluminum targets in the sample chamber and target stage of the magnetron sputtering system respectively, and evacuate the sample chamber to 5×10 -4 Pa;

步骤2,向样品室通入高纯度氩气至样品室内压力为0.8Pa,并将样品室的温度稳定在28℃,打开磁控溅射开关,向石墨表面溅射Al涂层,溅射时间60min,溅射功率85W;Step 2: Infuse high-purity argon gas into the sample chamber until the pressure in the sample chamber is 0.8 Pa, and stabilize the temperature of the sample chamber at 28°C, turn on the magnetron sputtering switch, and sputter Al coating on the graphite surface, the sputtering time is 60min, sputtering power 85W;

步骤3,将经过磁控溅射Al涂层的石墨和铜表面进行打磨、抛光后依次用丙酮、酒精、去离子水进行超声波清洗15min,放入恒温为50℃的干燥箱中干燥处理30min。将经过磁控溅射Al涂层的石墨与铜的待连接面进行装配,将铜置于经过磁控溅射Al镀层的石墨上方并放置于真空扩散连接模具中;Step 3: Grinding and polishing the Al-coated graphite and copper surfaces by magnetron sputtering, followed by ultrasonic cleaning with acetone, alcohol, and deionized water for 15 minutes, and drying in a drying oven at a constant temperature of 50°C for 30 minutes. Assembling the graphite coated with magnetron sputtered Al and the copper surface to be connected, placing the copper above the graphite coated with magnetron sputtered Al and placing it in a vacuum diffusion connection mold;

步骤4,将装配好的预置焊接件放入高真空扩散焊炉的炉膛中并抽真空,当真空度达到1×10-4Pa时,开始加热加压,以5MPa/min的加压速率加载至50MPa并始终保持该压力,以10℃/min的升温速率升高至500℃并保温20min,而后再以5℃/min的升温速率升高至700℃,保温20min后随炉冷却,得到铜/CuAl合金层/Al4C3化合物/石墨结构的连接接头。Step 4, put the assembled pre-welded parts into the hearth of the high-vacuum diffusion welding furnace and vacuumize it. When the vacuum degree reaches 1×10 -4 Pa, start heating and pressurizing at a pressurization rate of 5MPa/min Load to 50MPa and maintain the pressure all the time, raise the temperature to 500°C at a rate of 10°C/min and keep it for 20 minutes, then raise it to 700°C at a rate of 5°C/min, keep it for 20 minutes and then cool with the furnace to get Connection joint of copper/CuAl alloy layer/Al 4 C 3 compound/graphite structure.

步骤5,将步骤4得到的T1紫铜和石墨接头通过机械加工沿轴线截面切开,用砂纸对界面打磨后抛光,制备成金相试样,采用扫描电子显微镜观察接头微观组织结构。In step 5, the T1 red copper and graphite joint obtained in step 4 is cut along the axial section by machining, the interface is polished with sandpaper and then polished to prepare a metallographic sample, and the microstructure of the joint is observed with a scanning electron microscope.

Claims (3)

1. A copper and graphite diffusion connection method containing an aluminum intermediate layer is characterized in that a magnetron sputtering technology is adopted to prepare a micron-sized aluminum intermediate layer on the surface of graphite, and then the micron-sized aluminum intermediate layer is assembled with copper to be subjected to vacuum diffusion connection; in the connection process, a two-stage process is adopted, firstly, the copper matrix and the aluminum intermediate layer are mutually diffused to form a CuAl alloy layer, then, the CuAl alloy layer and the graphite matrix are subjected to diffusion connection, and finally, the copper/CuAl alloy layer/Al is formed4C3The specific process of the connecting joint of the compound/graphite structure comprises the following steps:
step 1, respectively placing graphite and an aluminum target material which are polished, ultrasonically cleaned and dried in a sample chamber and a target material table of a magnetron sputtering system, and vacuumizing the sample chamber to 1 multiplied by 10-3Pa~5×10-4Pa;
Step 2, introducing high-purity argon into the sample chamber until the pressure in the sample chamber is 0.5-0.8 Pa, stabilizing the temperature of the sample chamber at 20-30 ℃, opening a magnetron sputtering switch, sputtering an Al coating on the surface of the graphite for 45-60 min, wherein the sputtering power is 60-85W, and the thickness of the sputtering coating is 15-20 mu m;
step 3, after the graphite sputtered with the Al coating obtained in the step 2 is ground, polished, cleaned by ultrasonic waves and dried again, the graphite is assembled with a to-be-connected surface of copper, the copper is placed above the graphite subjected to magnetron sputtering of the Al coating and is placed in a vacuum diffusion connection die, and an assembled preset welding part is obtained;
step 4, placing the assembled preset welding part into a hearth of a high vacuum diffusion welding furnace and vacuumizing until the vacuum degree reaches 1 multiplied by 10-4When Pa is needed, heating and pressurizing are started, 40-60 MPa is loaded at a pressurizing rate of 4-8 MPa/min and the pressure is kept all the time, the temperature is increased to 500-550 ℃ at a heating rate of 5-10 ℃/min and is kept for 10-20 min, then the temperature is increased to 650-700 ℃ at a heating rate of 5-10 ℃/min, and is kept for 10-20 min and then is cooled along with the furnace, and a copper/CuAl alloy layer/Al is obtained4C3A compound/graphite structure connection joint.
2. The method for diffusion bonding of copper and graphite with an aluminum interlayer according to claim 1, wherein the grinding, polishing, ultrasonic cleaning and drying treatment in step 1 are carried out by grinding and polishing the surfaces of the graphite and aluminum laser pulse sputtering target, then sequentially carrying out ultrasonic cleaning for 15-20 min with acetone, alcohol and deionized water, and drying treatment for 20-30 min in a drying oven with a constant temperature of 40-50 ℃.
3. The method for diffusion bonding of copper and graphite with an aluminum-containing interlayer according to claim 1, wherein the polishing, burnishing, ultrasonic cleaning and drying treatment in step 3 is to polish and polish the surfaces of graphite and copper with a magnetron sputtering Al coating, then sequentially perform ultrasonic cleaning for 15-20 min with acetone, alcohol and deionized water, and dry in a drying oven at a constant temperature of 40-50 ℃ for 20-30 min.
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Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992007681A1 (en) * 1990-10-24 1992-05-14 Alcan International Limited Bonding metals
EP1297925A2 (en) * 2001-10-01 2003-04-02 Ngk Insulators, Ltd. HIP bonded body of beryllium member and copper alloy member and method of producing the same
US6579431B1 (en) * 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
CN1894435A (en) * 2003-12-18 2007-01-10 岛根县 Metal-based carbon fiber composite material and method for producing the same
CN101857189A (en) * 2010-05-31 2010-10-13 哈尔滨工业大学 Method for connecting carbon nanotubes to metals
CN102000896A (en) * 2010-11-10 2011-04-06 中国电子科技集团公司第十四研究所 Al-Cu transient liquid phase diffusion bonding method of Al alloy
US8186565B1 (en) * 2006-10-18 2012-05-29 Dow Global Technologies Llc Method of bonding aluminum-boron-carbon composites
CN102861986A (en) * 2012-10-12 2013-01-09 武汉理工大学 Spreading welding method of magnesium alloy and aluminum alloy containing composite middle layer
CN102873422A (en) * 2012-10-18 2013-01-16 北京科技大学 Aluminum and aluminum alloy and copper diffusion brazing process
CN103302371A (en) * 2013-06-26 2013-09-18 哈尔滨工业大学 Diffusion bonding method of hard alloy and metal
CN103612008A (en) * 2013-11-30 2014-03-05 西安科技大学 Magnesium alloy and copper composite panel manufacturing method based on transient liquid phase diffusion connection
CN103753123A (en) * 2013-12-18 2014-04-30 华中科技大学 Method for manufacturing multilayer amorphous alloy and copper composite structure through intermediate layer diffusion
CN104191085A (en) * 2014-09-01 2014-12-10 山东大学 Low-temperature diffusion bonding method for adding quasi-crystal interlayers to aluminum-steel-aluminum
CN105252137A (en) * 2015-11-13 2016-01-20 哈尔滨工业大学 Aluminum or aluminium alloy and copper vacuum diffusion welding method
EP3124644A1 (en) * 2015-07-27 2017-02-01 Cooper-Standard Automotive, Inc. Tubing material, double wall steel tubes and method of manufacturing a double wall steel tube
CN106392367A (en) * 2016-11-22 2017-02-15 江苏阳明船舶装备制造技术有限公司 Solder for brazing red copper and graphite and brazing method
CN106475679A (en) * 2016-11-30 2017-03-08 山东大学 A kind of copper and the discontinuous pressure process diffusion connecting process of the unrepeatered transmission of aluminium alloy
CN106825984A (en) * 2017-03-13 2017-06-13 河南理工大学 The method for welding and solder preparation method of a kind of high-volume fractional SiCp/Al composites
CN108188523A (en) * 2018-01-11 2018-06-22 太原理工大学 The preparation method of magnesium/aluminum-based layered composite plate
CN109014549A (en) * 2018-07-13 2018-12-18 中国航发北京航空材料研究院 A kind of diffusion welding connection method for making composite interlayer using Cu foil and Ti foil
WO2019040753A1 (en) * 2017-08-23 2019-02-28 Georgia Tech Research Corporation Low temperature direct bonding of aluminum nitride to alsic substrates
CN112077423A (en) * 2020-08-25 2020-12-15 合肥工业大学 A kind of diffusion bonding method of aluminum-magnesium alloy
CN112605551A (en) * 2020-12-30 2021-04-06 重庆理工大学 Connecting structure for welding titanium and copper by using multi-interlayer brazing filler metal and brazing method
CN112620847A (en) * 2020-12-09 2021-04-09 核工业西南物理研究院 Method for enhancing brazing connection between carbon-based material and copper alloy
CN112935512A (en) * 2021-03-26 2021-06-11 宁波江丰电子材料股份有限公司 Diffusion welding method for cobalt target and copper-chromium alloy back plate
CN112935511A (en) * 2021-03-26 2021-06-11 宁波江丰电子材料股份有限公司 Diffusion welding method for cobalt target and copper-zinc alloy back plate
CN113307647A (en) * 2021-04-16 2021-08-27 长春工业大学 Indirect brazing method of aluminum nitride ceramic copper-clad plate
CN113500280A (en) * 2021-07-07 2021-10-15 广西南宁市联力德材料科技有限公司 Diffusion welding method for dissimilar metals
CN113523471A (en) * 2021-07-06 2021-10-22 北京科技大学 A kind of diffusion welding method of tungsten-nickel-iron alloy and high-strength steel for preparing intermediate layer by material reduction
CN113927117A (en) * 2021-11-29 2022-01-14 宁波江丰电子材料股份有限公司 Method for welding brittle target material assembly
CN114367730A (en) * 2021-12-16 2022-04-19 武汉大学 Diamond/Bulk Copper Substrate Diffusion Bonding Process and Structure Based on Diamond Indirect Tensile Structure
CN114425647A (en) * 2020-10-29 2022-05-03 哈尔滨工业大学(威海) Method for connecting graphite film and copper
CN216576031U (en) * 2021-12-22 2022-05-24 浙江最成半导体科技有限公司 Sputtering target diffusion welding assembly

Patent Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992007681A1 (en) * 1990-10-24 1992-05-14 Alcan International Limited Bonding metals
US6579431B1 (en) * 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
EP1297925A2 (en) * 2001-10-01 2003-04-02 Ngk Insulators, Ltd. HIP bonded body of beryllium member and copper alloy member and method of producing the same
CN1894435A (en) * 2003-12-18 2007-01-10 岛根县 Metal-based carbon fiber composite material and method for producing the same
US8186565B1 (en) * 2006-10-18 2012-05-29 Dow Global Technologies Llc Method of bonding aluminum-boron-carbon composites
CN101857189A (en) * 2010-05-31 2010-10-13 哈尔滨工业大学 Method for connecting carbon nanotubes to metals
CN102000896A (en) * 2010-11-10 2011-04-06 中国电子科技集团公司第十四研究所 Al-Cu transient liquid phase diffusion bonding method of Al alloy
CN102861986A (en) * 2012-10-12 2013-01-09 武汉理工大学 Spreading welding method of magnesium alloy and aluminum alloy containing composite middle layer
CN102873422A (en) * 2012-10-18 2013-01-16 北京科技大学 Aluminum and aluminum alloy and copper diffusion brazing process
CN103302371A (en) * 2013-06-26 2013-09-18 哈尔滨工业大学 Diffusion bonding method of hard alloy and metal
CN103612008A (en) * 2013-11-30 2014-03-05 西安科技大学 Magnesium alloy and copper composite panel manufacturing method based on transient liquid phase diffusion connection
CN103753123A (en) * 2013-12-18 2014-04-30 华中科技大学 Method for manufacturing multilayer amorphous alloy and copper composite structure through intermediate layer diffusion
CN104191085A (en) * 2014-09-01 2014-12-10 山东大学 Low-temperature diffusion bonding method for adding quasi-crystal interlayers to aluminum-steel-aluminum
EP3124644A1 (en) * 2015-07-27 2017-02-01 Cooper-Standard Automotive, Inc. Tubing material, double wall steel tubes and method of manufacturing a double wall steel tube
CN105252137A (en) * 2015-11-13 2016-01-20 哈尔滨工业大学 Aluminum or aluminium alloy and copper vacuum diffusion welding method
CN106392367A (en) * 2016-11-22 2017-02-15 江苏阳明船舶装备制造技术有限公司 Solder for brazing red copper and graphite and brazing method
CN106475679A (en) * 2016-11-30 2017-03-08 山东大学 A kind of copper and the discontinuous pressure process diffusion connecting process of the unrepeatered transmission of aluminium alloy
CN106825984A (en) * 2017-03-13 2017-06-13 河南理工大学 The method for welding and solder preparation method of a kind of high-volume fractional SiCp/Al composites
WO2019040753A1 (en) * 2017-08-23 2019-02-28 Georgia Tech Research Corporation Low temperature direct bonding of aluminum nitride to alsic substrates
CN108188523A (en) * 2018-01-11 2018-06-22 太原理工大学 The preparation method of magnesium/aluminum-based layered composite plate
CN109014549A (en) * 2018-07-13 2018-12-18 中国航发北京航空材料研究院 A kind of diffusion welding connection method for making composite interlayer using Cu foil and Ti foil
CN112077423A (en) * 2020-08-25 2020-12-15 合肥工业大学 A kind of diffusion bonding method of aluminum-magnesium alloy
CN114425647A (en) * 2020-10-29 2022-05-03 哈尔滨工业大学(威海) Method for connecting graphite film and copper
CN112620847A (en) * 2020-12-09 2021-04-09 核工业西南物理研究院 Method for enhancing brazing connection between carbon-based material and copper alloy
CN112605551A (en) * 2020-12-30 2021-04-06 重庆理工大学 Connecting structure for welding titanium and copper by using multi-interlayer brazing filler metal and brazing method
CN112935511A (en) * 2021-03-26 2021-06-11 宁波江丰电子材料股份有限公司 Diffusion welding method for cobalt target and copper-zinc alloy back plate
CN112935512A (en) * 2021-03-26 2021-06-11 宁波江丰电子材料股份有限公司 Diffusion welding method for cobalt target and copper-chromium alloy back plate
CN113307647A (en) * 2021-04-16 2021-08-27 长春工业大学 Indirect brazing method of aluminum nitride ceramic copper-clad plate
CN113523471A (en) * 2021-07-06 2021-10-22 北京科技大学 A kind of diffusion welding method of tungsten-nickel-iron alloy and high-strength steel for preparing intermediate layer by material reduction
CN113500280A (en) * 2021-07-07 2021-10-15 广西南宁市联力德材料科技有限公司 Diffusion welding method for dissimilar metals
CN113927117A (en) * 2021-11-29 2022-01-14 宁波江丰电子材料股份有限公司 Method for welding brittle target material assembly
CN114367730A (en) * 2021-12-16 2022-04-19 武汉大学 Diamond/Bulk Copper Substrate Diffusion Bonding Process and Structure Based on Diamond Indirect Tensile Structure
CN216576031U (en) * 2021-12-22 2022-05-24 浙江最成半导体科技有限公司 Sputtering target diffusion welding assembly

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
兰天;杜双明;胡结;: "保温时间对AZ31B镁合金/铝/铜扩散钎焊接头组织与力学性能的影响", 机械工程材料, no. 02 *
安俊杰等: "泡沫铜表面改性对化学气相沉积高质量泡沫金刚石的影响", 表面技术, no. 3 *
崔冰等: "TiC增强Cf/SiC复合材料与钛合金钎焊接头工艺分析", 焊接学报, no. 3 *
彭胜;初铭强;张书彦;张鹏;: "铝铜接头的扩散焊连接研究现状", 金属世界, no. 02 *
李启寿;程亮;杨勇;朱益军;蔡永军;李强;: "石墨-铜扩散连接的界面行为", 粉末冶金材料科学与工程, no. 05 *
林国标,黄继华,张建纲,刘慧渊,毛建英,李海刚: "Ag-Cu-Ti-(Ti+C)反应-复合钎焊SiC陶瓷和Ti合金的接头组织", 中国有色金属学报, no. 9 *
王世宇;李卓然;张招;侯兆滨;: "Mg/Cu/Al接触反应钎焊工艺及元素扩散行为分析", 焊接学报, no. 01 *
王鹏;李强;高增;程东锋;牛济泰;: "高体积比SiC_p/6063Al复合材料表面预置钛膜及真空钎焊分析", 焊接学报, no. 04 *
罗伟洪;雷建国;程蓉;伍晓宇;: "双工位阻焊式金属叠层实体制造工艺研究", 组合机床与自动化加工技术, no. 07 *

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